CN210182176U - Sn-Ni-Ag composite electrode thermistor chip - Google Patents
Sn-Ni-Ag composite electrode thermistor chip Download PDFInfo
- Publication number
- CN210182176U CN210182176U CN201921428535.3U CN201921428535U CN210182176U CN 210182176 U CN210182176 U CN 210182176U CN 201921428535 U CN201921428535 U CN 201921428535U CN 210182176 U CN210182176 U CN 210182176U
- Authority
- CN
- China
- Prior art keywords
- electrode layer
- thermistor chip
- electrode
- silver
- ceramic substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Abstract
The utility model discloses a Sn-Ni-Ag combined electrode thermistor chip, include: a heat-sensitive ceramic substrate and a composite metal electrode; the composite metal electrodes are arranged on two opposite surfaces of the thermosensitive ceramic substrate; the composite metal electrode comprises a silver electrode layer, a nickel electrode layer and a tin electrode layer, wherein the silver electrode layer is arranged on the heat-sensitive ceramic substrate, the nickel electrode layer is arranged on the silver electrode layer, and the tin electrode layer is arranged on the nickel electrode layer. Compare conventional individual layer silver electrode thermistor chip, the utility model discloses better welding performance and higher reliability have.
Description
Technical Field
The utility model relates to an electronic components technical field, concretely relates to Sn-Ni-Ag combined electrode thermistor chip.
Background
The thermosensitive temperature chip is widely used in various temperature detection, temperature compensation and temperature control circuits as a temperature sensing element of a temperature sensor, and converts a temperature signal into an electric signal through the characteristic that the resistance of the thermosensitive temperature chip changes along with the change of temperature.
The existing thermistor chip consists of a thermosensitive ceramic body and single-layer silver electrodes respectively arranged on two opposite surfaces of the thermosensitive ceramic body. The single-layer silver electrode thermistor chip has the following problems:
1) the thermistor chip is generally soldered to the wiring by solder when used. Silver is easily oxidized in the air, and a poor tin-plating phenomenon is easily caused in the above-mentioned soldering process.
2) Since silver is a metal with a low melting point, the melted solder corrodes the silver electrode during the soldering process, which causes deterioration of the electrical properties of the thermistor chip.
3) In long-term use, silver ions in the silver electrode of the thermistor can migrate into tin, so that the electrical property of the thermistor chip is degraded.
SUMMERY OF THE UTILITY MODEL
Aiming at the defects existing in the problems, the utility model provides a Sn-Ni-Ag composite electrode thermistor chip.
The utility model discloses a Sn-Ni-Ag combined electrode thermistor chip, include: a heat-sensitive ceramic substrate and a composite metal electrode;
the composite metal electrodes are arranged on two opposite surfaces of the thermosensitive ceramic substrate;
the composite metal electrode comprises a silver electrode layer, a nickel electrode layer and a tin electrode layer, wherein the silver electrode layer is arranged on the thermosensitive ceramic substrate, the nickel electrode layer is arranged on the silver electrode layer, and the tin electrode layer is arranged on the nickel electrode layer.
As a further improvement of the utility model, the thickness of the silver electrode layer is 1.0-50.0 μm.
As a further improvement of the utility model, the thickness of the nickel electrode layer is 0.1-5.0 μm.
As a further improvement of the utility model, the thickness of the tin electrode layer is 1.0-10.0 μm.
As a further improvement of the utility model, the silver electrode layer is arranged on the heat-sensitive ceramic substrate in a screen printing mode.
As a further improvement of the utility model, the nickel electrode layer is arranged on the silver electrode layer in an electroplating way.
As a further improvement of the utility model, the tin electrode layer is arranged on the nickel electrode layer in an electroplating way.
As a further improvement of the utility model, the thermal sensitive ceramic base member is the NTC thermal sensitive ceramic base member, the thermistor chip is the NTC thermistor chip.
Compared with the prior art, the beneficial effects of the utility model are that:
the utility model discloses a Sn-Ni-Ag combined electrode thermistor chip compares conventional individual layer silver-colored electrode thermistor chip, has better welding performance and higher reliability.
Drawings
Fig. 1 is a schematic structural diagram of a Sn-Ni-Ag composite electrode thermistor chip according to an embodiment of the present invention;
fig. 2 is a flow chart illustrating a process for manufacturing a Sn-Ni-Ag composite electrode thermistor chip according to an embodiment of the present invention.
In the figure:
1. a heat-sensitive ceramic substrate; 2. a silver electrode layer; 3. a nickel electrode layer; 4. and a tin electrode layer.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all embodiments of the present invention. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative efforts belong to the protection scope of the present invention.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplification of description, but do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should also be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present invention can be understood in specific cases to those skilled in the art.
The invention is described in further detail below with reference to the accompanying drawings:
as shown in fig. 1, the utility model provides a Sn-Ni-Ag composite electrode thermistor chip, including: the ceramic substrate comprises a heat-sensitive ceramic substrate 1 and composite metal electrodes arranged on two opposite surfaces of the heat-sensitive ceramic substrate 1; the composite metal electrode comprises a silver electrode layer 2, a nickel electrode layer 3 and a tin electrode layer 4, wherein the silver electrode layer 2 is arranged on the heat-sensitive ceramic substrate 1, the nickel electrode layer 3 is arranged on the silver electrode layer 2, and the tin electrode layer 4 is arranged on the nickel electrode layer 3. Wherein:
the utility model discloses above-mentioned combined electrode's design principle does:
the silver electrode layer 2 at the bottom layer of the utility model is used as a base layer combined with the heat-sensitive ceramic substrate 1 and can form good ohmic contact with the heat-sensitive ceramic substrate 1; the nickel electrode layer 3 of the middle layer has the characteristic of high melting point, so that the corrosion of molten tin to the bottom electrode is prevented during welding, and the welding resistance and the high temperature resistance of the thermistor chip can be better improved; the outer tin electrode layer 4 is a welding layer and a protective layer, so that welding performance can be better provided, a good welding spot is formed between the thermistor chip and a lead, and the lead is prevented from being separated from the thermistor chip.
Furthermore, in order to ensure that the silver electrode layer 2, the nickel electrode layer 3 and the tin electrode layer 4 can fully exert their respective performances, the utility model discloses the thickness of further design silver electrode layer 2 is 1.0-50.0 μm, the thickness of nickel electrode layer 3 is 0.1-5.0 μm, the thickness of tin electrode layer 4 is 1.0-10.0 μm. Wherein:
the utility model discloses the design principle of above-mentioned each electrode layer thickness does:
the silver electrode layer 2 is not tightly combined with the heat-sensitive ceramic substrate 1 if it is too thick, so that the reliability of the product is reduced, and the product is easily curled or peeled during cutting, thereby reducing the reliability of the product. The nickel electrode layer 3 is too thin, and is poorly bonded to the thermal sensitive ceramic substrate 1 and the silver electrode layer 2, and too thick, it is easily delaminated and separated during cutting. Too thin a tin electrode layer 4 gives poor bonding with the nickel electrode layer 3, and too thick a tin electrode layer tends to delaminate or curl and peel when cut.
Based on the above principle, the thickness of the silver electrode layer 2 of the present invention is further preferably 10 μm, the thickness of the nickel electrode layer 3 is further preferably 2 μm, and the thickness of the tin electrode layer 4 is further preferably 5 μm; the welding performance and reliability of the product can be optimized.
Further, the utility model discloses silver electrode layer 2 adopts screen printing's mode to set up on heat-sensitive porcelain base member 1, and concrete process flow is: screen printing silver paste, drying, and high-temperature sintering.
Furthermore, the nickel electrode layer 3 of the utility model is arranged on the silver electrode layer 2 in an electroplating way, and the tin electrode layer 4 is arranged on the nickel electrode layer 3 in an electroplating way; the specific process flow is as follows: the upper hanger is cleaned, electroplated with nickel and electroplated with tin.
Further, the utility model discloses a thermal sensitive porcelain base member 1 can adopt NTC thermal sensitive porcelain base member, and the thermistor chip that constitutes from this is NTC thermistor chip.
As shown in fig. 2, the utility model provides a preparation method of a Sn-Ni-Ag composite electrode thermistor chip, which comprises the following steps:
preparing cylindrical or cuboid thermistor ceramics, cutting the thermistor ceramics into thin slices, polishing and cleaning the thin slices to obtain the thermosensitive ceramic substrate 1.
silver electrode slurry is printed on two opposite surfaces of the thermosensitive ceramic substrate 1 through a screen printing process, and the silver electrode slurry is dried and then sintered at a high temperature to obtain the silver electrode layer 2 with good ohmic contact.
soaking the heat-sensitive ceramic substrate 1 with the silver electrode layer 2 in electroplating solution with certain nickel ion concentration, and electroplating nickel on the surface of the silver electrode layer 2 under the action of an electric field to obtain a nickel electrode layer 3; wherein, the electroplating thickness is: 0.1-5.0 μm, current set as: 2-10 mA.
soaking a heat-sensitive ceramic substrate 1 with a silver electrode layer 2 and a nickel electrode layer 3 in an electroplating solution with a certain tin ion concentration, and electroplating tin on the surface of the nickel electrode layer 3 under the action of an electric field to obtain a tin electrode layer 4; wherein, the electroplating thickness is: 1-50 μm, current set at: 2-10 mA.
Step 5, cutting the chip:
and testing the resistivity of the thermal sensitive ceramic substrate, calculating the size of the capacitor of a single chip according to the test result and a resistance calculation formula of the resistance of the required chip, and then cutting the ceramic substrate with the composite electrode according to the size to obtain the single NTC thermal sensitive resistor chip.
Step 6, testing and sorting:
the method is suitable for a thermistor tester, the thermistor chips obtained in the step 5 through batch production are subjected to resistance value testing one by one, and products which do not meet the requirements are classified and eliminated.
Conventional individual layer silver electrode thermistor chip with the utility model discloses Sn-Ni-Ag electrode thermistor chip performance contrast:
a ceramic substrate with the resistivity of 20k omega mm, the B value of 3950 and the thickness of 0.5mm is respectively used for manufacturing a single-layer silver electrode thermistor chip and a composite Sn-Ni-Ag electrode thermistor chip. Wherein the thickness of the silver layer of the single-layer silver electrode thermistor chip is 10 mu m; the silver electrode layer 2 of the composite Sn-Ni-Ag electrode thermistor chip is 10 μm thick, the nickel electrode layer 3 is 2 μm thick, and the tin electrode layer 4 is 5 μm thick.
And respectively testing the resistance value and the B value of the single-layer silver electrode thermistor chip and the composite Sn-Ni-Ag electrode thermistor chip, and respectively carrying out weldability and solderability tests and 125 ℃/1000H high-temperature aging experiments, wherein 20 samples are adopted in each experiment.
The weldability test is as follows: and immersing the chip into molten tin liquid at 260 ℃ for standing for 2s, slowly taking out the chip, and calculating the ratio of the area covered by the soldering tin on the surface of the chip to the whole area. The larger the proportion, the better the weldability is.
The solder resistance test is as follows: and immersing the chip into the 280 ℃ molten tin liquid, standing for 2s, slowly taking out the chip, and calculating the change rate of the resistance value before and after the chip test. The smaller the change in resistance value, the better the solder resistance.
High-temperature aging test: and (3) aging the sample in an oven at 125 ℃ for 1000 hours, and calculating the resistance change rate of the resistor, namely the aging change rate according to the resistance values before and after the test.
The test data are shown in table 1 below:
TABLE 1
As can be seen from the data in Table 1, the resistance values and B values of the two chips are almost the same; the tin rate of the single-layer silver electrode electric chip is poor, and the tin rate of each chip is different, the tin rate of the Sn-Ni-Ag composite electrode chip of the utility model is 100%, and the weldability is obviously superior to that of the single-layer silver electrode electric chip; the solderability change rate and the aging change rate of the Sn-Ni-Ag composite electrode chip of the utility model are also obviously smaller than the single-layer silver electrode chip, which shows that the solderability and the reliability of the Sn-Ni-Ag composite electrode chip of the utility model are superior to those of the traditional single-layer silver electrode electric chip.
The above is only a preferred embodiment of the present invention, and is not intended to limit the present invention, and various modifications and changes will occur to those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (8)
1. A Sn-Ni-Ag composite electrode thermistor chip is characterized by comprising: a heat-sensitive ceramic substrate and a composite metal electrode;
the composite metal electrodes are arranged on two opposite surfaces of the thermosensitive ceramic substrate;
the composite metal electrode comprises a silver electrode layer, a nickel electrode layer and a tin electrode layer, wherein the silver electrode layer is arranged on the thermosensitive ceramic substrate, the nickel electrode layer is arranged on the silver electrode layer, and the tin electrode layer is arranged on the nickel electrode layer.
2. The Sn-Ni-Ag composite electrode thermistor chip of claim 1, wherein the thickness of the silver electrode layer is 1.0 to 50.0 μm.
3. The Sn-Ni-Ag composite electrode thermistor chip of claim 1, wherein the thickness of the nickel electrode layer is 0.1 to 5.0 μm.
4. The Sn-Ni-Ag composite electrode thermistor chip of claim 1, wherein the thickness of the tin electrode layer is 1.0 to 10.0 μm.
5. The Sn-Ni-Ag composite electrode thermistor chip of claim 1, wherein the silver electrode layer is disposed on the thermal porcelain substrate by screen printing.
6. The Sn-Ni-Ag composite electrode thermistor chip of claim 1, wherein the nickel electrode layer is disposed on the silver electrode layer by electroplating.
7. The Sn-Ni-Ag composite electrode thermistor chip of claim 1, wherein the tin electrode layer is disposed on the nickel electrode layer by electroplating.
8. The Sn-Ni-Ag composite electrode thermistor chip of claim 1, wherein the thermal ceramic substrate is an NTC thermal ceramic substrate and the thermistor chip is an NTC thermistor chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921428535.3U CN210182176U (en) | 2019-08-30 | 2019-08-30 | Sn-Ni-Ag composite electrode thermistor chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921428535.3U CN210182176U (en) | 2019-08-30 | 2019-08-30 | Sn-Ni-Ag composite electrode thermistor chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN210182176U true CN210182176U (en) | 2020-03-24 |
Family
ID=69842697
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201921428535.3U Active CN210182176U (en) | 2019-08-30 | 2019-08-30 | Sn-Ni-Ag composite electrode thermistor chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN210182176U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111029065A (en) * | 2019-12-31 | 2020-04-17 | 广东爱晟电子科技有限公司 | High-precision and high-reliability Ir-Cu-Au composite electrode thermosensitive chip |
-
2019
- 2019-08-30 CN CN201921428535.3U patent/CN210182176U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111029065A (en) * | 2019-12-31 | 2020-04-17 | 广东爱晟电子科技有限公司 | High-precision and high-reliability Ir-Cu-Au composite electrode thermosensitive chip |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6660554B2 (en) | Thermistor and method of manufacture | |
| US5896081A (en) | Resistance temperature detector (RTD) formed with a surface-mount-device (SMD) structure | |
| US20130221584A1 (en) | Thermistor and method for manufacturing the same | |
| US11346726B2 (en) | Sensor element, sensor arrangement, and method for manufacturing a sensor element and a sensor arrangement | |
| JP2591205B2 (en) | Thermistor | |
| US10861624B2 (en) | Sensor element, sensor arrangement, and method for manufacturing a sensor element | |
| EP0171877A1 (en) | Method of securing leads to a thermistor | |
| CN210182176U (en) | Sn-Ni-Ag composite electrode thermistor chip | |
| CA2051824A1 (en) | Thermistor having a negative temperature coefficient in multi-layer technology | |
| US6368734B1 (en) | NTC thermistors and NTC thermistor chips | |
| US6515572B2 (en) | Circuit arrangement comprising an SMD-component, in particular a temperature sensor, and a method of manufacturing a temperature sensor | |
| CN109659104A (en) | A kind of highly reliable two-sided Heterogeneous Composite electrode heat sensitive chip | |
| JPH10116706A (en) | Chip type thermistor and its manufacturing method | |
| JP7023890B2 (en) | Method for manufacturing high-conductivity base metal electrodes and alloy low ohm chip resistors | |
| TWI602202B (en) | Highly conductive base metal or alloy low ohmic chip resistor manufacturing method | |
| JP3915188B2 (en) | Chip resistor and manufacturing method thereof | |
| JP3018925B2 (en) | Electrochemical element | |
| JP2641530B2 (en) | Manufacturing method of chip-shaped electronic component | |
| CN214847970U (en) | Surface-mounted electronic element with novel film electrode pattern | |
| JP3740410B2 (en) | Detection element | |
| JP2002015944A (en) | Ceramic capacitor | |
| US4695818A (en) | Electrical resistor with a negative temperature coefficient for incremental resistance values and method for manufacturing same | |
| CN113670463B (en) | White light LED junction temperature and fluorescent glue temperature measuring device | |
| JP4671492B2 (en) | Detection element | |
| JP2000100601A (en) | Chip resistor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |