CN210180940U - Automatic optical detection mechanism for detecting defects of silicon wafer - Google Patents
Automatic optical detection mechanism for detecting defects of silicon wafer Download PDFInfo
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- CN210180940U CN210180940U CN201920994898.7U CN201920994898U CN210180940U CN 210180940 U CN210180940 U CN 210180940U CN 201920994898 U CN201920994898 U CN 201920994898U CN 210180940 U CN210180940 U CN 210180940U
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Abstract
The utility model provides an automatic optical detection mechanism of detection silicon wafer defect contains base, light unit, image acquisition unit to and image judgement unit, can be with waiting to detect the silicon wafer setting of defect and be in on the base, by light unit provides the light of silicon wafer, and with image acquisition unit acquisition the image that awaits measuring on silicon wafer surface, again with image judgement unit receives and judges have image abnormal place to be the defect in the image that awaits measuring, but automated inspection silicon wafer defect.
Description
Technical Field
The utility model relates to a detect silicon wafer defect technique, in particular to detect automatic optical detection mechanism of silicon wafer defect.
Background
Silicon wafers are round chips manufactured by cutting silicon rods, and after the silicon rods are cut into the silicon wafers, a large amount of residues are left on the surfaces of the silicon wafers, so that the defects (defects) like scratches or water stains on the surfaces of the silicon wafers are not avoided even through the processes of polishing and cleaning, and therefore the defects on the surfaces of the silicon wafers are required to be detected so as to ensure the shipment quality of the silicon wafers.
In the current method for detecting defects on the surface of a silicon wafer, whether the silicon wafer manufacturing plant or the silicon wafer recycling plant, the defects on the surface of the silicon wafer are still manually detected, mainly through the experience of detection personnel, however, the method for manually detecting the defects on the surface of the silicon wafer is easy to misjudge, and the defects are still found due to manual work when the silicon wafer is delivered, so that the delivery quality is not uniform.
The above-mentioned problem of manually detecting the surface defect of the silicon wafer surface, especially when the silicon wafer surface has scratches, even if the detecting personnel can find that the scratches exist, the energy is only used to obtain the length of the scratches, and the depth of the scratches cannot be determined, for example, the defect is removed by grinding and polishing, but also the removal amount is empirically estimated, which makes it difficult to accurately measure the depth of the scratches, and there is a possibility that the depth of the grinding and polishing is not enough, so that the defect removal cannot be completed at one time, and thus the efficiency of the silicon wafer manufacturing process cannot be effectively improved. In addition, the polishing depth is too great, which may reduce the unnecessary thickness of the silicon wafer and waste the silicon wafer material.
SUMMERY OF THE UTILITY MODEL
In view of the above, there is a need to provide an automatic optical inspection mechanism for inspecting defects of silicon wafers, which is mainly used for inspecting defects on the surface of silicon wafers by automatic optical inspection, and has higher accuracy than manual inspection.
The utility model provides an automatic optical detection mechanism of detection silicon wafer defect contains a base, a light unit, an image acquisition unit and an image judgement unit, the base can be used to set up the silicon wafer that waits to detect the defect, the light unit is corresponding to the base and provides the light of silicon wafer, the image acquisition unit with the light unit set up in the coplanar of silicon wafer, in order to retrieve the surface of silicon wafer is having a image of waiting to survey under the light unit shines. The image judging unit is electrically connected with the image capturing unit, and judges whether the image to be detected has image difference and defects after the image judging unit receives the image to be detected.
In one embodiment, the device further comprises a horizontal displacement unit, wherein the horizontal displacement unit is connected with the base and controls the base to displace along the horizontal direction.
In one embodiment, the apparatus further comprises a turning unit, wherein the turning unit is connected with the base and the horizontal displacement unit, so that the silicon wafer on the base can be tilted to different angles for the image capturing unit to capture different angle images of the silicon wafer to be measured.
In one embodiment, the illumination unit illuminates with a brightness of more than 10000 lumens.
In one embodiment, the apparatus further includes a defect image database electrically connected to the image determination unit and storing a plurality of defect images corresponding to the silicon wafer in the image determination unit for the image determination unit to determine the defect of the silicon wafer.
In one embodiment, a defect removal unit is further included to remove the defect.
Therefore, when silicon wafer surface defect exists, the permeable the utility model discloses an automatic optical inspection mechanism carries out the detection of defect, with image judgement unit receives after the image that awaits measuring, judge whether the image that awaits measuring exists the image difference, can judge accurately whether silicon wafer surface is defective, with the solution silicon wafer still has the problem of flaw because of the artifical defect not found when dispatching from the factory, in order to ensure silicon wafer is dispatched from the factory the flawless quality unanimity.
In addition, when the surface of the silicon wafer is scratched, the angle of the image captured by the capturing unit can be adjusted because the silicon wafer to be detected with the defect can be inclined to different angles along with the base, and the actual depth of the defect can be judged according to a plurality of captured defect images with different angles. And after the actual depth of the scratch is known, the defect removing unit can remove the defect once according to the known depth, so that the efficiency of the silicon wafer manufacturing process is effectively improved.
And when the obtained defect images are sufficient and complete, the image judging unit can automatically match and compare the defect types according to the classification of the defect images in an artificial intelligence manner, so as to achieve the effects of accurately judging the defect types and proposing a better removing manner.
Drawings
Fig. 1 is a schematic diagram of an automatic optical inspection mechanism for inspecting defects of silicon wafers according to an embodiment of the present invention.
Fig. 2 is a block diagram of an automatic optical inspection mechanism for inspecting defects of silicon wafers according to an embodiment of the present invention.
Fig. 3 is a schematic diagram of sectional image capturing by the image capturing unit according to an embodiment of the present invention, wherein the automatic optical inspection mechanism for inspecting defects of silicon wafers is configured with a horizontal displacement of a base.
Fig. 4 is a schematic diagram of an automatic optical inspection mechanism for inspecting defects of a silicon wafer according to an embodiment of the present invention capturing defect images when the silicon wafer is tilted to different angles.
Description of the reference numerals
Automatic optical inspection mechanism 100 silicon wafer 200
Scratch 201 base 10
The defect removing unit 60 has a first axis X
Second axial Y ray L
Dotted line C Path P
Defective image D1 defective image D2
Axial direction of rotation A
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more apparent, the following describes in detail an automatic optical inspection mechanism for inspecting defects of silicon wafers according to the present application by way of embodiments and with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are merely illustrative of the present application and are not intended to limit the present application. The various elements of the drawings are drawn to scale as appropriate for the description, dimensions, amount of distortion or displacement, rather than to scale as actual elements.
Referring to fig. 1 to 4, the present invention provides an automatic optical inspection mechanism 100 for inspecting defects of silicon wafers, comprising a base 10, an illumination unit 20, an image capturing unit 30, and an image determining unit 40, further comprising a defect image database 50 and a defect removing unit 60 in the present embodiment, wherein:
the base 10 is used for arranging a silicon wafer 200 to be detected for defects. In this embodiment, the base 10 is connected to a horizontal displacement unit 11, the horizontal displacement unit 11 is disposed on a base 12 in this embodiment, and is displaced along a first axial direction X and a second axial direction Y in the horizontal direction, and the horizontal displacement unit 11 controls the base 10 to displace in the horizontal direction, wherein the first axial direction X and the second axial direction Y are vertical to each other in the horizontal direction (as shown in fig. 3). In this embodiment, the present invention further comprises a turning unit 13, wherein the turning unit 13 is connected to the base 10 and the horizontal displacement unit 11, and the base 10 can be horizontally displaced along the first axial direction X and the second axial direction Y by the horizontal displacement unit 11, and besides, the turning unit 13 can enable the silicon wafer 200 on the base 10 to be tilted to different angles.
The light irradiation unit 20 is disposed corresponding to the susceptor 10 to provide light irradiation of the silicon wafer 200 on the susceptor 10. In the present embodiment, the brightness of the light L of the illumination unit 20 is greater than 10000 lumens, preferably 50000 lumens. The illumination unit 20 may be a High power light emitting diode (High power led) in a preferred embodiment. The number of the light units 20 is two in the present embodiment, and the two light units 20 are disposed on two opposite sides of the base 10, and the angles of light irradiation to the silicon wafer 200 on the base 10 are 45 degrees respectively.
The image capturing unit 30 and the illumination unit 20 are disposed on the same surface of the silicon wafer 200, and the image capturing unit 30 can capture an image 31 to be measured (the dotted line C represents the image capturing direction) under the illumination of the illumination unit 20 on the surface of the silicon wafer 200. The image capturing unit 30 may be a CCD camera, a CMOS camera, or a similar image capturing device, and in the present embodiment, a CCD camera is used as a preferred embodiment. Since the turning unit 13 is provided in this embodiment, when the silicon wafer 200 on the base 10 is tilted to different angles along with the turning unit 13, the image capturing unit 30 can capture images of the silicon wafer 200 at different angles.
The image determining unit 40 is electrically connected to the image capturing unit 30, and after the image capturing unit 30 captures the image 31 to be detected, the image determining unit 40 receives the image 31 to be detected, and the image determining unit 40 determines whether there is an image difference and a defect in the image 31 to be detected. The image determination unit 40 is executed by a central processing unit of the computer device.
The defect image database 50 is connected to the image determination unit 40, and stores a plurality of defect images corresponding to the silicon wafer 200 in the image determination unit 40, wherein the defect images refer to images of the defective portions of the to-be-measured image 31 determined by the image determination unit 40, and the defect images are stored in the defect image database 50 for the image determination unit 40 to perform defect determination on the silicon wafer 200.
The defect removing unit 60 is used to remove defects on the silicon wafer 200, and may be at least one of a grinder, a polisher, and an etcher or a combination thereof (not shown). The polishing machine has a large removal amount when polishing the surface of the silicon wafer 200, the polishing machine has a small removal amount when polishing the surface of the silicon wafer 200, and the etching machine removes a small amount of the surface of the silicon wafer 200.
In the automatic optical inspection mechanism 100 for inspecting defects of silicon wafers, in the embodiment, the inspection method is described, when inspecting defects of the silicon wafers 200, the silicon wafers 200 to be inspected are arranged on the base 10, the light unit 20 is used to provide light to the silicon wafers 200 above the base 10, so that the surfaces of the silicon wafers 200 have brightness enough to highlight the defects, the surfaces of the silicon wafers 200 are under the light of the light unit 20, the image capturing unit 30 is used to capture the images 31 to be inspected on the surfaces of the silicon wafers 200 above the base 10, and the image determining unit 40 is used to determine that the image defects are located in the images 31 to be inspected after receiving the images 31 to be inspected. In the present embodiment, the illumination unit 20 illuminates the surface of the silicon wafer 200 with 50000 lumens of high brightness light L.
In the present embodiment, the size of the silicon wafer 200 is larger than the range of the image that can be captured by the image capturing unit 30 at one time, so the position of the image capturing unit 30 of the present embodiment is fixed above the base 10, and therefore, when the defect detection of the silicon wafer 200 is performed, in the present embodiment, the silicon wafer 200 is displaced along a path P along with the base 10 on the horizontal displacement unit 11 along the first axis X and the second axis Y (as shown in fig. 3), and when the silicon wafer 200 is displaced along the path P, the image capturing unit 30 captures the local image of the silicon wafer 200 in segments, and then the local image is integrated and restored to the image to be detected 31 by the image determining unit 40. After being judged by the image judging unit 40, the image 31 to be detected includes a defect image D1 and a defect image D2, where the defect image D1 is a scratch 201 on the silicon wafer 200, and the defect image D2 is a water stain on the surface of the silicon wafer 200.
The defect image D1 has a certain depth, the base 10 of the present embodiment is connected to the turning unit 13, the turning unit 13 has a turning axis a parallel to the horizontal direction, and the base 10 can be tilted to different angles by the turning unit 13 with the turning axis a as an axis. As shown in fig. 4, the scratch 201 on the silicon wafer 200 is inclined laterally along the depth direction, and if the image capturing unit 30 is aligned to capture the scratch 201, the true depth cannot be necessarily measured. In the embodiment, the turning unit 13 is tilted to adjust the angle at which the silicon wafer 200 is captured by the image capturing unit 30, so that the plurality of defect images D1 (shown in fig. 4) of the scratch 201 can be captured at different angles, and after the image determining unit 40 receives the plurality of defect images D1, the image determining unit 40 performs an operation according to the plurality of defect images D1 to determine the actual depth of the scratch 201.
In summary, when the actual depth of the scratch 201 is known, the scratch 201 can be removed by the defect removal unit 60 once in this embodiment. As mentioned above, the defect removal unit 60 may be a grinder, a polisher or an etcher, and if the depth of the scratch 201 is deep, the scratch 201 can be removed by grinding, polishing and etching respectively according to the depth of the scratch 201; if the depth of the scratch 201 is shallow, polishing or etching can still be performed, or the scratch 201 can be removed at one time. If the water stain of the defect image D2 is present, it can be removed by etching once.
In the present embodiment, the image to be tested 31 is determined to have a defective image by the image determination unit 40, and the defective image can be stored through the defective image database 50 and classified and stored. For example, the defect image D1 is classified into a scratched image according to its image, and the defect image D2 is classified into a water stain image according to its image. When the image capturing unit 30 captures the next image 31 to be detected, the image determining unit 40 can automatically match and compare the defect types according to the classification of the defect images, and can directly determine that the defect is scratched if the defect image is similar to the defect image D1, and can directly determine that the defect is water stain if the defect image is similar to the defect image D2, and at this time, the defect removing unit 60 can remove the defect in a corresponding defect removing manner.
The characteristics of the utility model can be easily found by the above description, which comprises:
1. when silicon wafer 200's surface defect exists, the utility model discloses an automatic optical inspection mechanism 100 but automated inspection silicon wafer 200's defect, promptly with image judgement unit 40 receives whether image difference exists in the image 31 that awaits measuring, can judge fairly accurately whether there is silicon wafer 200 surface defect, compare in current manual detection, can solve silicon wafer 200 still has the problem of flaw because of the artifical defect not found when dispatching from the factory, make silicon wafer 200 does not have the defect and can ensure the quality unanimity when dispatching from the factory.
2. When the defect on the surface of the silicon wafer 200 is a scratch, the silicon wafer 200 may be tilted with the susceptor 10 to detect the depth, so as to capture a plurality of defect images at different angles to determine the actual depth of the defect. After the actual depth of the defect is known, the defect removing unit 60 is facilitated to remove the defect once according to the known depth, so as to effectively improve the efficiency of the silicon wafer manufacturing process.
3. The embodiment of the present invention provides an embodiment, by the defect image (such as defect image D1, D2) that image judgment unit 40 judges to be defective, can by the defect image database 50 stores and classifies, obtains along with the increase of the number of times of detection the defect image is enough and complete, image judgment unit 40 can be similar with artificial intelligence's mode, according to the classification of defect image and automatic matching and comparison out affiliated defect type to reach and judge out the defect type accurately, and propose the efficiency of preferred mode of getting rid of.
The above-mentioned embodiments only represent some embodiments of the present invention, which are described in detail and specific, but not to be construed as limiting the scope of the present invention. It should be noted that, for those skilled in the art, without departing from the spirit of the present invention, several variations and modifications can be made, which are within the scope of the present invention. Therefore, the protection scope of the present invention should be subject to the appended claims.
Claims (6)
1. An automated optical inspection mechanism for inspecting silicon wafer defects, comprising:
the base is used for arranging a silicon wafer to be detected for defects;
the light irradiation unit corresponds to the base and provides light for the silicon wafer;
the image capturing unit and the light irradiating unit are arranged on the same surface of the silicon wafer so as to capture an image to be detected of the surface of the silicon wafer under the irradiation of the light irradiating unit; and
and the image judging unit is electrically connected with the image capturing unit so as to receive the image to be detected and judge whether the image to be detected has image difference and defects.
2. The automated optical inspection mechanism for inspecting silicon wafer defects of claim 1 further comprising a horizontal displacement unit coupled to said pedestal for controlling the displacement of said pedestal in a horizontal direction.
3. The automated optical inspection mechanism of claim 2, further comprising a steering unit, the steering unit being connected to the base and the horizontal displacement unit, so that the silicon wafer on the base can be tilted to different angles for the image capturing unit to capture different angle images of the silicon wafer under inspection.
4. The automated optical inspection mechanism of claim 1, wherein the illumination unit illuminates with light having a brightness greater than 10000 lumens.
5. The automated optical inspection mechanism of claim 1, further comprising a defect image database, wherein the defect image database is electrically connected to the image determination unit and stores a plurality of defect images corresponding to the silicon wafers for the image determination unit to determine defects of the silicon wafers.
6. The automated optical inspection mechanism for inspecting silicon wafer defects of claim 1 further comprising a defect removal unit to remove said defects.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201920994898.7U CN210180940U (en) | 2019-06-28 | 2019-06-28 | Automatic optical detection mechanism for detecting defects of silicon wafer |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201920994898.7U CN210180940U (en) | 2019-06-28 | 2019-06-28 | Automatic optical detection mechanism for detecting defects of silicon wafer |
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| CN210180940U true CN210180940U (en) | 2020-03-24 |
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| CN201920994898.7U Active CN210180940U (en) | 2019-06-28 | 2019-06-28 | Automatic optical detection mechanism for detecting defects of silicon wafer |
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