CN210123970U

CN210123970U - High-performance balanced type broadband low-noise amplifier

Info

Publication number: CN210123970U
Application number: CN201920775370.0U
Authority: CN
Inventors: 王桐; 王祁钰; 罗力伟
Original assignee: Sichuan Yifeng Electronic Science And Technology Co Ltd
Current assignee: Sichuan Yifeng Electronic Science And Technology Co Ltd
Priority date: 2019-05-27
Filing date: 2019-05-27
Publication date: 2020-03-03
Anticipated expiration: 2029-05-27

Abstract

The utility model discloses a high performance balanced type broadband low noise amplifier, including input Lange coupling bridge, output Lange coupling bridge, first amplifier circuit, second amplifier circuit, the input of first amplifier circuit, second amplifier circuit is connected respectively to the upper right end, the right lower extreme of input Lange coupling bridge, the output of first amplifier circuit, second amplifier circuit is connected the upper left end, the left lower extreme of output Lange coupling bridge respectively, the input of input Lange coupling bridge connects the Pin end, and the output termination of output Lange coupling bridge Pout end; the first amplifying circuit and the second amplifying circuit have the same circuit topology mechanism, component parameters and functions, and are vertically symmetrical about a Pin end and a Pout end. The utility model discloses the range of application is wide, and the frequency band is wide, and the small signal gain is high, and the in-band noise is low, can satisfy the down conversion demand among the receiving system of mobile communication, military reconnaissance, helps the modularization and the miniaturization of equipment.

Description

High-performance balanced type broadband low-noise amplifier

Technical Field

The utility model relates to a wireless communication technology field, specificly relate to a high performance balanced type broadband low noise amplifier.

Background

Low noise amplifier, amplifier with very low noise figure. It is commonly used as a high-frequency or intermediate-frequency preamplifier of various radio receivers and an amplifying circuit of high-sensitivity electronic detection equipment. In the case of amplifying a weak signal, the noise of the amplifier itself may interfere with the signal seriously, and it is desirable to reduce the noise to improve the signal-to-noise ratio of the output. The degree of signal-to-noise ratio degradation caused by the amplifier is typically expressed in terms of a noise figure F. The noise figure F of an ideal amplifier is 1(0 db), which has the physical meaning that the input snr is equal to the output snr.

A Low Noise Amplifier (LNA) is one of the amplifying circuits, and amplifies a radio frequency signal received from an antenna, so as to improve the signal-to-Noise ratio of the entire link. With the development of wireless communication, low noise amplifiers have been widely used. At present, the miniaturization and modularization requirements are put forward for the receiving part in the radar and the base station. Considering the increasing demand for channel capacity. Therefore, a high-performance low-noise amplifier chip needs to be designed.

The low-noise chip can effectively reduce the volume of equipment and reduce the signal-to-noise ratio of a receiving circuit, and plays a critical role in improving the performance of a system.

SUMMERY OF THE UTILITY MODEL

To the problem, the utility model provides a balanced type broadband low noise amplifier of high performance, aim at satisfies and can keep low noise, high gain under the scene is used to the ultra wide band. The low-noise amplifier can meet the signal amplification requirement in a receiving system of mobile communication and military reconnaissance, and is beneficial to modularization and miniaturization of equipment.

The utility model adopts the following technical proposal:

a high-performance broadband low-noise amplifier comprises an input Lange coupling bridge, an output Lange coupling bridge, a first amplifying circuit and a second amplifying circuit, wherein the upper right end and the lower right end of the input Lange coupling bridge are respectively connected with the input ends of the first amplifying circuit and the second amplifying circuit, the output ends of the first amplifying circuit and the second amplifying circuit are respectively connected with the upper left end and the lower left end of the output Lange coupling bridge, the input end of the input Lange coupling bridge is connected with a Pin end, and the output end of the output Lange coupling bridge is connected with a Pout end;

the first amplifying circuit comprises a first matching unit, a field-effect tube Q1, a second matching unit, a field-effect tube Q2, a third matching unit, a field-effect tube Q3, a fourth matching unit, a first feeding unit, a second feeding unit and a first negative feedback unit which are connected in sequence, wherein the first feeding unit and the second feeding unit respectively feed electricity to the grid electrode and the drain electrode of the field-effect tube Q1, the field-effect tube Q2 and the field-effect tube Q3, the first negative feedback unit is connected between the grid electrode and the drain electrode of the field-effect tube Q3, and the source electrodes of the field-effect tube Q1, the field-effect tube Q2 and the field-effect tube Q3 are all;

the first amplifying circuit and the second amplifying circuit have the same circuit topology mechanism, component parameters and functions, and are vertically symmetrical about a Pin end and a Pout end.

Preferably, the matching unit one comprises a capacitor C1 and a microstrip line TL2 which are sequentially connected in series, the left end of the capacitor C1 is connected with the output end of the input Lange coupling bridge, the right end of the microstrip line TL2 is connected with the gate of the field effect transistor Q1, and the middle of the microstrip line TL2 is provided with an open-circuit microstrip line TL 1.

Preferably, the matching unit two includes a capacitor C2 and a microstrip line TL3 connected in series in sequence, the left end of the capacitor C2 is connected to the drain of the field effect transistor Q1, and the right end of the microstrip line TL3 is connected to the gate of the field effect transistor Q2.

Preferably, the matching unit three comprises a capacitor C3 and a microstrip line TL5 which are sequentially connected in series, the left end of the capacitor C2 is connected with the drain of the field effect transistor Q2, the right end of the microstrip line TL5 is connected with the gate of the field effect transistor Q3, and the middle of the microstrip line TL5 is provided with an open-circuit microstrip line TL 4.

Preferably, the matching unit iv includes a microstrip line TL6 and a capacitor C5 connected in series in sequence, the left end of the microstrip line TL6 is connected to the drain of the field effect transistor Q3, the right end of the capacitor C5 is connected to the left upper end of the Lange coupling bridge, a capacitor C4 is arranged in the middle of the microstrip line TL6, one end of the capacitor C4 is connected to the microstrip line TL6, the other end of the capacitor C4 is provided with a resistor R2, and the upper end of the resistor R2 is grounded.

Preferably, the feeding unit comprises a microstrip line TL7, a microstrip line TL8, a microstrip line TL9 and a capacitor C8 which are connected in parallel, the lower ends of the microstrip line TL7 and the microstrip line L8 are respectively provided with an inductor Ln2 and a resistor R1, the upper ends of the microstrip line TL7, the microstrip line TL8 and the microstrip line TL9 are connected with a VG end, and the lower ends of the inductor Ln2, the resistor R1 and the microstrip line TL9 are respectively connected with the gates of a field effect transistor Q1, a field effect transistor Q2 and a field effect transistor Q3; one end of the capacitor C8 is connected between the microstrip line TL7, the microstrip line TL8, the microstrip line TL9 and the VG end, and the other end of the capacitor C8 is grounded.

Preferably, the two feed units include a microstrip line TL10, a microstrip line TL11, a microstrip line TL12, and a capacitor C9, which are connected in parallel, the upper ends of the microstrip line TL10, the microstrip line TL11, and the microstrip line TL12 are all connected to the VD end, the lower ends are respectively connected to the drains of the effect transistor Q1, the field effect transistor Q2, and the field effect transistor Q3, one end of the capacitor C9 is connected between the effect transistor Q1, the field effect transistor Q2, the field effect transistor Q3, and the VD end, and the other end is grounded.

Preferably, the first negative feedback unit comprises an inductor Ln1, a capacitor C6 and a capacitor C10 which are sequentially connected in series, the left end of the inductor Ln1 is connected with the gate of the field effect transistor Q3, the right end of the capacitor C10 is grounded, and the drain of the field effect transistor Q3 is connected between the capacitor C7 and the capacitor C10.

Preferably, a microstrip line TL13 is provided between the source of the field effect transistor Q2 and ground.

Preferably, the input Lange coupling bridge and the output Lange coupling bridge have the same structure and are both in an X shape, the branches and the branches are connected by interconnection lines made of once-wiring thin metal, the interconnection lines are positioned on the upper layers of the branches and belong to different metal layers with the branches, and the interconnection lines are connected with the branches through the carved holes; resistors R3 are arranged at the left lower ends of the input Lange coupling bridge and the output Lange coupling bridge, and one end of each resistor R3, which is far away from the input Lange coupling bridge and the output Lange coupling bridge, is grounded.

The utility model has the advantages that:

the utility model discloses the range of application is wide, and the frequency band is wide, and the small signal gain is high, and in-band noise is low, and the down conversion demand among the receiving system of mobile communication, military reconnaissance can be satisfied to the good characteristics of input/output echo, helps the modularization and the miniaturization of equipment.

Drawings

In order to illustrate the technical solutions of the embodiments of the present invention more clearly, the drawings of the embodiments will be briefly described below, and it is obvious that the drawings in the following description only relate to some embodiments of the present invention, and are not intended to limit the present invention.

Fig. 1 is a schematic diagram of the circuit structure of the present invention.

Fig. 2 is a schematic structural diagram of the matching unit of the present invention.

Fig. 3 is a schematic structural diagram of the second matching unit of the present invention.

Fig. 4 is a schematic diagram of the three structures of the matching unit of the present invention.

Fig. 5 is a schematic diagram of the structure of the matching unit of the present invention.

Fig. 6 is a schematic structural diagram of a first negative feedback unit according to the present invention.

Fig. 7 is a schematic structural diagram of a first feeding unit according to the present invention.

Fig. 8 is a schematic structural diagram of the second feeding unit of the present invention.

Fig. 9 is a schematic structural view of a conventional Lange bridge.

Fig. 10 is a schematic structural diagram of an input Lange coupling bridge and an output Lange coupling bridge according to the present invention.

Fig. 11 is a stabilizing network of the fet Q2 of the present invention.

Fig. 12 is a small signal S parameter test chart of the present invention.

FIG. 13 is P of the present invention_-1The test chart of (1).

Fig. 14 is a noise figure test chart of the present invention.

Detailed Description

In order to make the purpose, technical solution and advantages of the embodiments of the present invention clearer, the drawings of the embodiments of the present invention are combined below to clearly and completely describe the technical solution of the embodiments of the present invention. It is to be understood that the embodiments described are only some of the embodiments of the present invention, and not all of them. All other embodiments, which can be obtained by a person skilled in the art without any inventive work based on the described embodiments of the present invention, belong to the protection scope of the present invention.

Unless otherwise defined, technical or scientific terms used herein shall have the ordinary meaning as understood by one of ordinary skill in the art to which this disclosure belongs. The use of the word "comprising" or "comprises", and the like, in this disclosure is intended to mean that the elements or items listed before that word, include the elements or items listed after that word, and their equivalents, without excluding other elements or items. "upper", "lower", "left", "right", and the like are used merely to indicate relative positional relationships, and when the absolute position of the object being described is changed, the relative positional relationships may also be changed accordingly.

The present invention will be further explained with reference to the drawings and examples.

As shown in fig. 1 to 11, a high-performance balanced wideband low noise amplifier includes an input Lange coupling bridge, an output Lange coupling bridge, a first amplifier circuit, and a second amplifier circuit, where the upper right end and the lower right end of the input Lange coupling bridge are respectively connected to the input ends of the first amplifier circuit and the second amplifier circuit, the output ends of the first amplifier circuit and the second amplifier circuit are respectively connected to the upper left end and the lower left end of the output Lange coupling bridge, the input end of the input Lange coupling bridge is connected to a Pin end, and the output end of the output Lange coupling bridge is connected to a Pout end; the first amplifying circuit and the second amplifying circuit combine the two paths of radio frequency output signals into one path of radio frequency signal and then output the radio frequency signal through a power output end (Pout).

The matching unit I comprises a capacitor C1 and a microstrip line TL2 which are sequentially connected in series, the left end of the capacitor C1 is connected with the output end of the input Lange coupling bridge, the right end of the microstrip line TL2 is connected with the grid of the field effect transistor Q1, an open-circuit microstrip line TL1 is arranged in the middle of the microstrip line TL2, and the lower end of the open-circuit microstrip line TL1 is directly and vertically connected to the microstrip line TL 2. The first matching unit is used for isolating direct current power supply from a grid electrode of the field effect transistor Q1 to a radio frequency input port (Pin end), and good matching between the input Lange coupling bridge and the field effect transistor Q1 is guaranteed.

The matching unit II comprises a capacitor C2 and a microstrip line TL3 which are sequentially connected in series, the left end of the capacitor C2 is connected with the drain electrode of a field effect tube Q1, and the right end of the microstrip line TL3 is connected with the grid electrode of a field effect tube Q2. And the second matching unit is used for ensuring the radio frequency matching between the drain electrode of the field effect transistor Q1 and the grid electrode of the field effect transistor Q2.

The matching unit III comprises a capacitor C3 and a microstrip line TL5 which are sequentially connected in series, the left end of the capacitor C2 is connected with the drain electrode of a field effect tube Q2, the right end of the microstrip line TL5 is connected with the grid electrode of a field effect tube Q3, an open-circuit microstrip line TL4 is arranged in the middle of the microstrip line TL5, and the open-circuit microstrip line TL4 is directly and vertically connected to a microstrip line TL 5. The third matching unit is used for ensuring the radio frequency matching between the drain electrode of the field effect transistor Q2 and the grid electrode of the field effect transistor Q3.

Matching unit four is including microstrip line TL6 and electric capacity C5 of series connection in proper order, microstrip line TL 6's left end termination field effect transistor Q3's drain electrode, electric capacity C5's right-hand member connects the output of output Lange coupling bridge, microstrip line TL 6's middle part is equipped with electric capacity C4, electric capacity C4's one end is connected on microstrip line TL6, and the other end is equipped with resistance R2, resistance R2's upper end ground connection. The fourth matching unit is used for isolating direct current power supply from the grid of the field effect transistor Q3 to a radio frequency output port (Pout), and ensures good matching between the field effect transistor Q3 and an output Lange coupling bridge.

The feed unit comprises a microstrip line TL7, a microstrip line TL8, a microstrip line TL9 and a capacitor C8 which are connected in parallel, the lower ends of the microstrip line TL7 and the microstrip line L8 are respectively provided with an inductor Ln2 and a resistor R1, the upper ends of the microstrip line TL7, the microstrip line TL8 and the microstrip line TL9 are connected with a VG end, and the lower ends of the inductor Ln2, the resistor R1 and the microstrip line TL9 are respectively connected with the grids of a field effect tube Q1, a field effect tube Q2 and a field effect tube Q3; one end of the capacitor C8 is connected between the microstrip line TL7, the microstrip line TL8, the microstrip line TL9 and the VG end, and the other end of the capacitor C8 is grounded. The first feed unit is used for supplying power to the grids of the field effect transistor Q1, the field effect transistor Q2 and the field effect transistor Q3 and filtering radio frequency signals on the feed microstrip line.

The two feed units comprise microstrip lines TL10, TL11, TL12 and a capacitor C9 which are connected in parallel, the upper ends of the microstrip lines TL10, TL11 and TL12 are all connected with a VD end, the lower ends of the microstrip lines are respectively connected with the drains of an effect tube Q1, a field effect tube Q2 and a field effect tube Q3, one end of the capacitor C9 is connected among the effect tube Q1, the field effect tube Q2, the field effect tube Q3 and the VD end, and the other end of the capacitor C9 is grounded. The second feeding unit is used for supplying power to the drains of the field effect transistor Q1, the field effect transistor Q2 and the field effect transistor Q3 and filtering radio frequency signals on the feeding microstrip line.

The first negative feedback unit comprises an inductor Ln1, a capacitor C6, a capacitor C7 and a capacitor C10 which are sequentially connected in series, the left end of the inductor Ln1 is connected with the grid of a field effect transistor Q3, the right end of the capacitor C10 is grounded, and the drain of the field effect transistor Q3 is connected between the capacitor C7 and the capacitor C10. The first feedback unit is used for flattening the low-noise amplification gain and ensuring the stability of the field effect transistor Q3.

And a microstrip line TL13 is arranged between the source electrode of the field-effect transistor Q2 and the ground, so that the stability of the field-effect transistor Q2 is ensured.

The input Lange coupling bridge and the output Lange coupling bridge are of the same structure and are both X-shaped, and based on an MMIC process, the input Lange coupling bridge and the output Lange coupling bridge are composed of branch lines and interconnection lines on the branch lines, the branch lines and the branch lines are connected through the interconnection lines made of once-wiring thin metal, the interconnection lines are located on the upper layers of the branch lines and belong to different metal layers with the branch lines, and the interconnection lines are connected with the branch lines through engraved holes. The left lower extreme of input Lange coupling bridge, output Lange coupling bridge all is equipped with resistance R3, the one end ground connection of input Lange coupling bridge, output Lange coupling bridge is kept away from to resistance R3, connects as shown in fig. 9 and fig. 10, input Lange coupling bridge, output Lange coupling bridge are different from traditional Lange bridge, the utility model discloses an interconnection line is through vertical connection minor matters to parasitic inductance when reducing the high frequency.

The first amplifying circuit and the second amplifying circuit both comprise three-stage amplifying circuits and interstage matching circuits between the three-stage amplifying circuits, wherein the third-stage amplifying circuit reflects parallel current negative feedback to keep plus or minus 1dB of gain. The field effect transistor Q1, the first matching unit, the second matching unit, the first feeding unit and the second feeding unit form a first-stage amplifying circuit; the field effect transistor Q2, the matching unit II, the matching unit III, the feeding unit I and the feeding unit II form a second-stage amplifying circuit; the field-effect tube Q3, the third matching unit, the fourth matching unit, the first feeding unit and the second feeding unit form a third-stage amplifying circuit, the drain electrode of the field-effect tube Q3 is connected with the input end of the fourth matching unit, and the output end of the fourth matching unit is connected with the output Lange coupling bridge, so that two paths of radio-frequency output signals are combined into one path of radio-frequency signal and then output through the power output end.

As shown in FIG. 12, S parameters (including S11, S22 and S21) of 25-43GHz low-noise amplifier are shown, and it can be seen that S11 and S22 are all less than-15 dB at 25-43 GHz. S21 is greater than 19dB and less than 21 dB.

FIG. 13 shows the output P at 25-43GHz_-1With a change in frequency. The output P-1 is a 1dB gain compression point of the output power of the power device and describes the maximum output power of the power device. Can reach 14 at 40GHzdBm W。

FIG. 14 shows the variation of noise figure with frequency at 25-43GHz, and the full-band noise figure is less than 1.35 dB.

The above description is only a preferred embodiment of the present invention, and the present invention is not limited to the above embodiments, and although the present invention has been disclosed with the preferred embodiments, it is not limited to the present invention, and any skilled person in the art can make some modifications or equivalent embodiments without departing from the scope of the present invention, but all the technical matters of the present invention are within the scope of the present invention.

Claims

1. A high-performance balanced type broadband low-noise amplifier is characterized by comprising an input Lange coupling bridge, an output Lange coupling bridge, a first amplifying circuit and a second amplifying circuit, wherein the upper right end and the lower right end of the input Lange coupling bridge are respectively connected with the input ends of the first amplifying circuit and the second amplifying circuit, the output ends of the first amplifying circuit and the second amplifying circuit are respectively connected with the upper left end and the lower left end of the output Lange coupling bridge, the input end of the input Lange coupling bridge is connected with a Pin end, and the output end of the output Lange coupling bridge is connected with a Pout end;

2. The high-performance balanced type broadband low-noise amplifier as claimed in claim 1, wherein the matching unit one comprises a capacitor C1 and a microstrip line TL2 connected in series in sequence, the left end of the capacitor C1 is connected to the output end of the input Lange coupling bridge, the right end of the microstrip line TL2 is connected to the gate of the fet Q1, and the middle of the microstrip line TL2 is provided with an open-circuit microstrip line TL 1.

3. The high-performance balanced type broadband low-noise amplifier according to claim 1, wherein the matching unit two comprises a capacitor C2 and a microstrip line TL3 connected in series in sequence, the left end of the capacitor C2 is connected to the drain of the field effect transistor Q1, and the right end of the microstrip line TL3 is connected to the gate of the field effect transistor Q2.

4. The high-performance balanced type broadband low-noise amplifier according to claim 3, wherein the third matching unit comprises a capacitor C3 and a microstrip line TL5 which are sequentially connected in series, the left end of the capacitor C2 is connected with the drain of the FET Q2, the right end of the microstrip line TL5 is connected with the gate of the FET Q3, and the middle of the microstrip line TL5 is provided with an open-circuit microstrip line TL 4.

5. The high-performance balanced type broadband low-noise amplifier according to claim 1, wherein the fourth matching unit comprises a microstrip line TL6 and a capacitor C5 connected in series in sequence, the left end of the microstrip line TL6 is connected to the drain of a field effect transistor Q3, the right end of the capacitor C5 is connected to the left upper end of an output Lange coupling bridge, a capacitor C4 is arranged in the middle of the microstrip line TL6, one end of the capacitor C4 is connected to the microstrip line TL6, the other end of the capacitor C4 is provided with a resistor R2, and the upper end of the resistor R2 is grounded.

6. The high-performance balanced type broadband low-noise amplifier according to claim 1, wherein the first feeding unit comprises a microstrip line TL7, a microstrip line TL8, a microstrip line TL9 and a capacitor C8 which are connected in parallel, the lower ends of the microstrip line TL7 and the microstrip line L8 are respectively provided with an inductor Ln2 and a resistor R1, the upper ends of the microstrip line TL7, the microstrip line TL8 and the microstrip line TL9 are respectively connected with a VG end, and the lower ends of the inductor Ln2, the resistor R1 and the microstrip line TL9 are respectively connected with gates of a field effect transistor Q1, a field effect transistor Q2 and a field effect transistor Q3; one end of the capacitor C8 is connected between the microstrip line TL7, the microstrip line TL8, the microstrip line TL9 and the VG end, and the other end of the capacitor C8 is grounded.

7. The high-performance balanced type broadband low-noise amplifier according to claim 1, wherein the second feeding unit comprises a microstrip line TL10, a microstrip line TL11, a microstrip line TL12, and a capacitor C9, which are connected in parallel, the upper ends of the microstrip line TL10, the microstrip line TL11, and the microstrip line TL12 are all connected to a VD terminal, the lower ends of the microstrip line TL10, the microstrip line TL11, and the microstrip line TL12 are respectively connected to drains of an effect transistor Q1, a field effect transistor Q2, and a field effect transistor Q3, one end of the capacitor C9 is connected between the effect transistor Q1, the field effect transistor Q2, the field effect transistor Q3, and.

8. The high-performance balanced broadband low noise amplifier according to claim 1, wherein the negative feedback unit one comprises an inductor Ln1, a capacitor C6 and a capacitor C10 connected in series in sequence, the left end of the inductor Ln1 is connected to the gate of the fet Q3, the right end of the capacitor C10 is connected to ground, and the drain of the fet Q3 is connected between the capacitor C7 and the capacitor C10.

9. The high-performance balanced broadband low noise amplifier according to claim 1, wherein a microstrip line TL13 is disposed between the source of the field effect transistor Q2 and ground.

10. The high-performance balanced broadband low-noise amplifier according to claim 1, wherein the input Lange coupling bridges and the output Lange coupling bridges have the same structure and are all X-shaped, and the branches are connected by interconnection lines made of a once-wired thin metal, the interconnection lines are located on the upper layer of the branches and belong to different metal layers from the branches, and the connection between the interconnection lines and the branches is connected by means of engraved holes; resistors R3 are arranged at the left lower ends of the input Lange coupling bridge and the output Lange coupling bridge, and one end of each resistor R3, which is far away from the input Lange coupling bridge and the output Lange coupling bridge, is grounded.