CN210110712U - Detection mechanism and detection device - Google Patents
Detection mechanism and detection device Download PDFInfo
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- CN210110712U CN210110712U CN201921259625.4U CN201921259625U CN210110712U CN 210110712 U CN210110712 U CN 210110712U CN 201921259625 U CN201921259625 U CN 201921259625U CN 210110712 U CN210110712 U CN 210110712U
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Abstract
The utility model provides a detection mechanism for detect the quilt of the silicon chip that awaits measuring that is in the detection station edge, the quilt is surveyed the edge and is included two relative first surfaces, second surface and connect the terminal surface on first surface and second surface. Detection mechanism includes surface light source, terminal surface light source, surface reflection mechanism, terminal surface reflection mechanism and detects the camera, wherein: the surface light source is configured to emit surface illumination light to at least one surface of the edge to be detected, and the surface reflection mechanism is configured to reflect the surface illumination light reflected by the at least one surface to the detection camera; the end face reflection mechanism is configured to reflect the end face irradiation light emitted by the end face light source to the end face of the edge to be detected, and the end face irradiation light is reflected to the detection camera through the end face of the edge to be detected. The utility model discloses can realize the terminal surface and the detection on at least one surface of the edge of being surveyed of silicon chip to await measuring to promote detection efficiency, reduced the detection cost.
Description
Technical Field
The utility model belongs to silicon chip detection area especially relates to a detection mechanism and detection device.
Background
In the production process of solar cells, silicon rods need to be cut into silicon wafers, then the silicon wafers are cleaned, and after the cleaning, the silicon wafers need to be detected. Generally, a silicon wafer is placed on a conveying device, and detection devices are arranged on two sides of the conveying device to detect the conditions of dirt, hidden cracks, edge defects, warping degree and the like of two edges of the silicon wafer parallel to the conveying direction. As shown in fig. 1, a measured edge 51 of the silicon wafer 5 comprises three faces, respectively: opposing upper and lower surfaces 51a, 51b and an end surface 51c connecting the upper and lower surfaces 51a, 51 b.
The traditional detection mode can only detect one surface of the detected edge, and the detection mode has low detection efficiency and high cost.
SUMMERY OF THE UTILITY MODEL
To the above-mentioned technical defect that traditional detection mode exists, the utility model discloses the first aspect provides one kind can realize simultaneously carrying out the detection mechanism that detects to terminal surface and at least one surface at the quilt survey edge of silicon chip, and its technical scheme is as follows:
the utility model provides a detection mechanism for detect the edge under measurement of the silicon chip that awaits measuring that is in detection station, the edge under measurement includes two relative first surfaces, second surface and connects the terminal surface on first surface and second surface, and detection mechanism includes surface light source, end light source, surface reflection mechanism, end reflection mechanism and detection camera, wherein:
the surface light source is configured to emit surface illumination light to at least one surface of the edge to be detected, and the surface reflection mechanism is configured to reflect the surface illumination light reflected by the at least one surface to the detection camera;
the end face reflection mechanism is configured to reflect the end face irradiation light emitted by the end face light source to the end face of the edge to be detected, and the end face irradiation light is reflected to the detection camera through the end face of the edge to be detected.
The utility model provides a detection mechanism can realize detecting when the terminal surface and at least one surface of the edge of being surveyed of silicon chip that awaits measuring to promote maintenance efficiency, reduced the detection cost.
Furthermore, the plane where the detection station is located is parallel to the horizontal plane, the silicon wafer to be detected is horizontally arranged, the first surface is the upper surface of the detected edge of the silicon wafer to be detected, and the second surface is the lower surface of the detected edge of the silicon wafer to be detected.
The silicon wafer horizontally transmitted under the driving of the silicon wafer transmission device can smoothly enter and pass through the detection station of the detection mechanism, so that the silicon wafer in the transmission process is detected, and the detection efficiency is further improved.
Further, the surface light source includes an upper surface light source and a lower surface light source, and the surface reflection mechanism includes an upper surface reflection mechanism and a lower surface reflection mechanism, wherein: the upper surface light source is arranged above the detection station and is configured to emit upper surface illumination light rays to the upper surface of the detected edge, and the upper surface reflection mechanism is configured to reflect the upper surface illumination light rays reflected by the upper surface of the detected edge to the detection camera; the lower surface light source is arranged below the detection station and is configured to emit lower surface irradiation light rays to the lower surface of the detected edge, and the lower surface reflection mechanism is configured to reflect the lower surface irradiation light rays reflected by the lower surface of the detected edge to the detection camera; the end face reflection mechanism is arranged between the detection camera and the detection station, the end face light source is arranged on the side edge of the end face reflection mechanism, and the end face reflection mechanism is configured to reflect end face illumination light emitted by the end face light source to the end face of the detected edge along the direction perpendicular to the end face of the detected edge.
Through the cooperation of the upper surface light source, the lower surface light source, the upper surface reflection mechanism, the lower surface reflection mechanism, the end surface light source and the end surface reflection mechanism, the simultaneous detection of the upper surface, the lower surface and the end surface of the detected edge of the silicon wafer to be detected is realized. In addition, go up surface light source, lower surface light source and terminal surface light source homoenergetic and realize the vertical irradiation to the detected face that corresponds, make the light that detects the camera and can receive the main light way, the formation of image is clear, has promoted detection effect.
Further, the optical path length of the upper surface irradiation light reflected from the upper surface of the detected edge to the detection camera, the optical path length of the lower surface irradiation light reflected from the lower surface of the detected edge to the detection camera, and the optical path length of the end surface irradiation light reflected from the end surface of the detected edge to the detection camera are equal.
The imaging optical distances of the three surfaces of the detected edge by the detection camera are equal, so that the imaging definition of the detected edge by the camera is improved.
Further, the upper surface reflection mechanism comprises a first square prism, the first square prism is arranged between the upper surface light source and the detection station, and the first square prism is configured to horizontally reflect the upper surface irradiation light reflected by the upper surface of the detected edge to the detection camera; the lower surface reflection mechanism comprises a second square prism, the second square prism is arranged between the lower surface light source and the detection station, and the second square prism is configured to horizontally reflect the lower surface irradiation light reflected by the lower surface of the detected edge to the detection camera; the end face reflection mechanism comprises a third-party prism, the third-party prism is configured to reflect end face irradiation light emitted by the end face light source to the end face of the edge to be detected along the direction perpendicular to the end face of the edge to be detected, the end face of the edge to be detected horizontally reflects the end face irradiation light to the third-party prism, and the end face irradiation light enters the detection camera after passing through the third-party prism.
The simple implementation mode of the upper surface reflection mechanism, the lower surface reflection mechanism and the end surface reflection mechanism is provided, so that the irradiation light reflected by the upper surface, the lower surface and the end surface of the edge to be detected of the silicon wafer to be detected can horizontally enter the detection camera.
Further, a first cylindrical lens is arranged between the first square prism and the detection camera, the first square prism horizontally reflects the upper surface irradiation light reflected by the upper surface of the detected edge to the first cylindrical lens, and the upper surface irradiation light enters the detection camera after being transmitted by the first cylindrical lens; a second cylindrical lens is arranged between the second square prism and the detection camera, the lower surface of the second square prism, which is reflected by the lower surface of the edge to be detected, is irradiated by light rays and horizontally reflected to the second cylindrical lens, and the irradiated light rays on the lower surface enter the detection camera after being transmitted by the second cylindrical lens.
The optical path length of the end face irradiation light reflected from the end face of the edge to be detected to the detection camera is longer than the optical path length of the surface irradiation light reflected from the surface of the edge to be detected to the detection camera due to the influence of the installation position of the end face light source. The utility model discloses an add the cylindrical lens in the surface formation of image light path to the optical path of extension surface formation of image light path. And the imaging optical distances of the detection camera to the three surfaces of the detected edge are equal.
The utility model discloses the second aspect provides a detection device, its technical scheme as follows:
the utility model provides a detection device, includes first detection mechanism and second detection mechanism, first detection mechanism and second detection mechanism do the utility model discloses the detection mechanism that the first aspect provided, wherein:
the first detection mechanism is used for detecting a first detected edge of the silicon wafer to be detected, the second detection mechanism is used for detecting a second detected edge of the silicon wafer to be detected, and the first detected edge and the second detected edge are two side edges which are opposite to each other on the silicon wafer to be detected and are parallel to the transmission direction of the silicon wafer to be detected.
Through the cooperation of first detection mechanism and second detection mechanism, the utility model discloses a detection device can realize the comprehensive detection to two side reason of the silicon chip that awaits measuring to promote detection efficiency.
Furthermore, the detection device further comprises a mounting support, the first detection mechanism and the second detection mechanism are mounted on the mounting support, the detection station of the first detection mechanism and the detection station of the second detection mechanism are located on the same plane, and in the transmission process, the first detected edge and the second detected edge of the silicon wafer to be detected can respectively enter and pass through the detection station of the first detection mechanism and the detection station of the second detection mechanism.
The detection stations of the first detection mechanism and the second detection mechanism are arranged on the same plane, so that in the transmission process, the edges of two sides of the silicon wafer to be detected can respectively enter and pass through the detection stations of the corresponding detection mechanisms, and the detection efficiency is further improved.
Furthermore, the first detection mechanism and the second detection mechanism are arranged in a front-back staggered manner in the transmission direction of the silicon wafer to be detected.
The cross influence between the first detection mechanism and the second detection mechanism is prevented, and the detection effect is improved.
Furthermore, the detection device further comprises a mounting support, the mounting support comprises a translation guide rail, a first support frame and a second support frame, the first support frame and the second support frame are connected to the translation guide rail in a sliding mode, the first detection mechanism is installed on the first support frame, and the second detection mechanism is installed on the second support frame.
Make the utility model discloses a detection device can realize the detection demand to the silicon chip of various sizes.
Drawings
FIG. 1 is a schematic structural diagram of a detected edge of a silicon wafer;
fig. 2 is a schematic structural view of a detection mechanism in a first embodiment of the present invention;
fig. 3 is a schematic structural view of the detection mechanism according to the first embodiment of the present invention without the surface detection mechanism;
fig. 4 is a schematic structural diagram of a detection mechanism in a second embodiment of the present invention at a viewing angle;
fig. 5 is a schematic structural diagram of a detection mechanism in a third embodiment of the present invention at a viewing angle;
fig. 6 is a schematic structural diagram of a detecting mechanism in a fourth embodiment of the present invention at a viewing angle;
fig. 7 is a schematic perspective view of a detection device in an embodiment of the present invention;
fig. 8 is a schematic front view of the detecting device in the embodiment of the present invention;
fig. 9 is a schematic front view of the detection device in the embodiment of the present invention after omitting the end light source;
fig. 10 is a schematic top view of a detection device according to an embodiment of the present invention.
Detailed Description
In order to make the above objects, features and advantages of the present invention more comprehensible, the present invention is described in detail with reference to the accompanying drawings and the detailed description.
The utility model discloses a first aspect provides a detection mechanism, is provided with the detection station in it. The detection mechanism is used for detecting the detected edge of the silicon wafer to be detected at the detection station, and the detected edge of the silicon wafer to be detected comprises a first surface, a second surface and an end surface, wherein the first surface and the second surface are opposite, and the end surface is used for connecting the first surface and the second surface.
This detection mechanism includes surface light source, terminal surface light source, surface reflection mechanism, terminal surface reflection mechanism and detection camera, wherein: the surface light source is configured to emit surface illumination light to at least one surface of the edge to be detected, and the surface reflection mechanism is configured to reflect the surface illumination light reflected by the at least one surface to the detection camera, thereby enabling detection of the at least one surface of the edge to be detected. The end face reflection mechanism is configured to reflect the end face irradiation light emitted by the end face light source to the end face of the edge to be detected, and the end face irradiation light is reflected to the detection camera through the end face of the edge to be detected, so that the detection of the end face of the edge to be detected is realized.
It is visible, the utility model provides a detection mechanism can realize detecting when the terminal surface and at least one surface of the edge of being surveyed of silicon chip that awaits measuring to promote detection efficiency, reduced the detection cost.
The specific arrangement of the detection mechanism provided by the first aspect of the present invention will be described below by way of example with reference to four embodiments, but the following description is not exhaustive, and the arrangement form can be flexibly adjusted according to actual needs.
Before this, the following technical terms mentioned in the embodiments are explained:
a square prism: the semi-transparent semi-reflective film is plated on the inclined surface of one right-angle triangular prism, and the two right-angle triangular prisms are bonded together along the inclined surface by optical cement. Light rays enter the square prism perpendicular to one right-angle surface and then are split at the contact inclined surfaces (or called splitting inclined surfaces) of the two right-angle triangular prisms, one part of the light rays directly penetrates through the square prism to continue to be transmitted forwards, and the other part of the light rays generates 90-degree reflection, so that the transmission direction is adjusted.
A cylindrical lens: the light guide plate is a columnar structure (generally cylindrical), and two opposite surfaces are formed at two ends of the columnar structure, wherein one surface is used as incident light, and the other surface is used as light emergent surface. The light ray enters the cylindrical lens perpendicular to the light incident surface and is transmitted in the cylindrical lens, and finally exits the cylindrical lens perpendicular to the light emergent surface. Since the transmission speed of light in the cylindrical lens is lower than that in air, the cylindrical lens can be used to extend the optical path length of the optical path.
First embodiment
As shown in fig. 2 and 3, the plane of the inspection station 6 in this embodiment is parallel to the horizontal plane. Correspondingly, the silicon wafer 5 to be detected positioned at the detection station 6 is also in a horizontal state, the first surface of the detected edge 51 of the silicon wafer 5 to be detected is an upper surface 51a, and the second surface of the silicon wafer 5 to be detected is a lower surface 51 b.
The surface light source includes an upper surface light source 42a and a lower surface light source 42b, and the surface reflection mechanism includes an upper surface reflection mechanism 44a and a lower surface reflection mechanism 44 b. Wherein:
upper surface light source 42a is located above inspection station 6, upper surface light source 42a is configured to emit upper surface illumination light to upper surface 51a of edge 51 to be inspected, and upper surface reflection mechanism 44a is configured to reflect upper surface illumination light reflected by upper surface 51a of edge 51 to be inspected to inspection camera 41, thereby implementing inspection of upper surface 51a of edge 51 to be inspected.
Since the upper surface irradiation light is vertically irradiated on the upper surface 51a of the detected edge 51 from top to bottom, the upper surface irradiation light reflected by the upper surface 51a of the detected edge 51 is reflected to the detection camera 41 located at the side of the detection station 6. In this embodiment, the upper surface reflection mechanism 44a is a first square prism disposed between the upper surface light source 42a and the detection station 6, and an included angle between a light splitting slope of the first square prism and a light emitting direction of the upper surface light source 42a is 45 °. The upper surface illumination light emitted from the upper surface light source 42a enters the first square prism and is split at the splitting inclined plane of the first square prism, part of the split upper surface illumination light vertically irradiates downwards to the upper surface 51a of the detected edge 51, the upper surface 51a of the detected edge 51 then reflects the upper surface illumination light vertically upwards back to the first square prism, the upper surface illumination light is split again at the splitting inclined plane of the first square prism, and the split part of the split upper surface illumination light is horizontally reflected to the detection camera 41.
Correspondingly, the lower surface light source 42b is located below the detection station 6, the lower surface light source 44b is configured to emit lower surface illumination light to the lower surface 51b of the detected edge 51, and the lower surface reflection mechanism 44b is configured to reflect the lower surface illumination light reflected by the lower surface 51b of the detected edge 51 to the detection camera 41, so as to detect the lower surface 51b of the detected edge 51.
Similarly, in the present embodiment, the lower surface reflection mechanism 44b is a second square prism disposed between the lower surface light source 42b and the detection station 6, and the angle between the light splitting slope of the second square prism and the light emitting direction of the lower surface light source 42b is 45 °. The lower surface irradiation light emitted from the lower surface light source 42b enters the second square prism and is split at the splitting inclined surface of the second square prism, part of the split lower surface irradiation light vertically upwards irradiates the lower surface 51b of the measured edge 51, the lower surface 51b of the measured edge 51 then vertically downwards reflects the lower surface irradiation light back to the second square prism, the lower surface irradiation light is split again at the splitting inclined surface of the second square prism, and part of the split lower surface irradiation light is horizontally reflected to the detection camera 41.
The end face reflection mechanism 45 is arranged between the detection camera 41 and the detection station 6, and the end face light source 43 is arranged on the side edge of the end face reflection mechanism 45. The end face reflection mechanism 45 is configured to reflect the end face illumination light emitted from the end face light source 43 to the end face 51c of the measured edge 51 along the end face 51c perpendicular to the measured edge 51.
In this embodiment, the end face reflection mechanism 45 is a third lens disposed between the detection camera 41 and the detection station 6, and an included angle between a light splitting inclined plane of the third lens and the light emitting direction of the end face light source 43 is 45 °. The end face irradiation light emitted by the end face light source 43 firstly enters the third-party lens and is split at the splitting inclined plane of the third-party lens, part of the split end face irradiation light is vertically reflected to the end face 51c of the measured edge 51, the end face 51c of the measured edge 51 returns the end face irradiation light to the third-party lens in the original path, the end face irradiation light is split again at the splitting inclined plane of the third-party lens, and part of the split end face irradiation light enters the detection camera 41 along the horizontal direction.
As can be seen, the detection mechanism in this embodiment realizes simultaneous detection of the upper surface 51a, the lower surface 51b, and the end surface 51c of the edge 51 to be detected of the silicon wafer 5. In addition, upper surface light source 42a, lower surface light source 42b and terminal surface light source 43 homoenergetic vertical irradiation to corresponding being detected on the face, make the light that detects the camera and can receive the main light path, the formation of image is clear, has promoted detection effect.
As can be seen from the above description of the transmission process of the end surface illumination light, the optical path length of the end surface illumination light reflected from the end surface 51c of the measured edge 51 to the detection camera is extended relative to the optical path length of the surface illumination light reflected from the surface of the measured edge to the detection camera due to the influence of the installation position of the end surface light source.
In order to improve the overall imaging clarity of the edge 51 to be detected by the detection camera 41, the imaging optical lengths of the upper surface 51a, the lower surface 51b and the end surface 51c of the edge 51 to be detected by the detection camera 41 are set to be equal.
In view of the above, it is necessary to extend the imaging optical paths of the upper surface 51a and the lower surface 51b accordingly. In this embodiment, a first cylindrical lens 46a is disposed between the first prism and the detection camera 41, the first prism horizontally reflects the upper surface illumination light reflected by the upper surface 51a of the detected edge 51 to the first cylindrical lens 46a, and the upper surface illumination light is transmitted through the first cylindrical lens 46a and then enters the detection camera 41, so that the optical path of the upper surface illumination light is extended.
Correspondingly, a second cylindrical lens 46b is arranged between the second square prism and the detection camera 41, the lower surface irradiation light reflected by the lower surface 51b of the detected edge 51 is horizontally reflected to the second cylindrical lens 46b by the second square prism, and the lower surface irradiation light is transmitted through the second cylindrical lens 46b and then enters the detection camera 41, so that the light path of the lower surface irradiation light is prolonged.
Of course, in the implementation process, after the optical path length of each imaging optical path needs to be specifically analyzed and calculated, the specifications and the number of the first cylindrical lens 46a and the second cylindrical lens 46b need to be specifically set. In this embodiment, the number of the first cylindrical lenses 46a and the number of the second cylindrical lenses 46b are both two. In the present embodiment, the first and second square prisms have the same specification, the third prism has the same or different specification from the first and second square prisms, and the first and second cylindrical lenses 46a and 46b have the same specification.
In addition, the upper surface light source 42a, the lower surface light source 42b, and the end surface light source 43 in this embodiment may be light sources such as a common light source and a laser, and the present invention is not limited to the specific type and wavelength of the light source.
It should be noted that the upper surface reflection mechanism 44a, the lower surface reflection mechanism 44b, and the end surface reflection mechanism 45 in this embodiment are not limited to the square prism, and may be other reflection mechanisms that can implement the concept of the present invention.
Second embodiment
As shown in fig. 4, the present embodiment provides a detection mechanism having substantially the same structure as that of the first embodiment. The only difference between the two lies in: in the first embodiment, the first and second cylindrical lenses 46a and 46b are disposed near the detection camera 41. In this embodiment, the first and second cylindrical lenses 46a and 46b are disposed near the inspection station 6.
Third embodiment
As shown in fig. 5, the present embodiment provides a detection mechanism having substantially the same structure as that of the first embodiment. The only difference between the two lies in: in the first embodiment, the number of the first cylindrical lenses 46a and the second cylindrical lenses 46b is two. In the present embodiment, the number of the first cylindrical lenses 46a and the number of the second cylindrical lenses 46b are both one.
Fourth embodiment
As shown in fig. 6, the present embodiment provides a detection mechanism having substantially the same structure as that of the second embodiment. The only difference between the two lies in: in the second embodiment, the number of the first cylindrical lenses 46a and the second cylindrical lenses 46b is two. In the present embodiment, the number of the first cylindrical lenses 46a and the number of the second cylindrical lenses 46b are both one.
As shown in fig. 7 to 9, a second aspect of the present invention provides a detection apparatus including a first detection mechanism 2 and a second detection mechanism 3. The first detecting mechanism 2 and the second detecting mechanism 3 are the detecting mechanisms provided by the first aspect of the present invention, such as any one of the detecting mechanisms described in the first to fourth embodiments. Wherein:
the first detection mechanism 2 is configured to detect a first detected edge 51 of the silicon wafer 5 to be detected, the second detection mechanism 3 is configured to detect a second detected edge 52 of the silicon wafer 5 to be detected, and the first detected edge 51 and the second detected edge 52 are two side edges of the silicon wafer 5 to be detected that are opposite and parallel to a transmission direction (as shown by an arrow in fig. 1) of the silicon wafer 51 to be detected.
Further, the detection device further comprises a mounting support 1, the first detection mechanism 2 and the second detection mechanism 3 are mounted on the mounting support 1, and the detection station of the first detection mechanism 2 and the detection station of the second detection mechanism 3 are located on the same horizontal plane. The set height of the detection station is adjusted to be consistent with the set height of the transmission belt of the silicon wafer transmission device, namely, the first detected edge 51 and the second detected edge 52 of the silicon wafer 5 to be detected can respectively enter and pass through the detection station of the first detection mechanism 2 and the detection station of the second detection mechanism 3 in the transmission process, so that the automatic detection of the silicon wafer 5 to be detected in the transmission process is realized.
Further, the mounting bracket 1 includes a translation guide rail 11 and a first support frame 12 and a second support frame 13 which are slidably connected to the translation guide rail 11 and can horizontally slide along the translation guide rail 11, the first detection mechanism 2 is mounted on the first support frame 12, and the first detection mechanism 3 is arranged on the second support frame 13.
The position adjustment of the first detection mechanism 2 and the second detection mechanism 3 can be realized by sliding the first support frame 12 and the second support frame 13, so that the first detection mechanism 2 and the second detection mechanism 3 are close to or far away from the silicon wafer transmission device, and the detection of the silicon wafers 5 to be detected with various specifications is realized. If the silicon wafer 5 to be detected with a smaller detection specification is detected, the first support frame 12 and the second support frame 13 are driven to slide towards the middle; for example, when the silicon wafer 5 to be tested with a larger specification is detected, the first support frame 12 and the second support frame 13 are driven to slide towards the two ends.
In some embodiments, the first support frame 12 and the second support frame 13 are slidably connected to the translation guide rail 11 via sliders, respectively. The translation guide rail 11 is further provided with a first driving motor and a second driving motor which respectively drive the first support frame 12 and the second support frame 13 to slide.
In order to prevent the light paths in the first detection mechanism 2 and the second detection mechanism 3 from generating cross influence, as shown in fig. 10, further, the first detection mechanism 2 and the second detection mechanism 3 are arranged in a front-back staggered manner in the transmission direction of the silicon wafer 5 to be detected, it is noted that the first detection mechanism 2 and the second detection mechanism 3 are arranged in a front-back staggered manner, the arrangement is not limited to two continuous detection stations, and other stations can be arranged between the two detection stations.
The structures of the first detection mechanism 2 and the second detection mechanism 3 may be identical, and correspondingly, the structures of the first support frame 12 and the second support frame 13 are also identical. In some embodiments, the first support frame 12 and the second support frame 13 respectively include a support base and a camera mounting bracket, a light source mounting bracket and an optical lens mounting bracket connected to the support base. Wherein: the inspection camera 41 is slidably mounted on the camera mounting bracket and can slide up and down along the camera mounting bracket, the upper surface light source 42a, the lower surface light source 42b and the end surface light source 43 are mounted on the light source mounting bracket, and the upper surface reflection mechanism 44a, the upper surface reflection mechanism 44b, the end surface reflection mechanism 45, the first cylindrical mirror 46a and the second cylindrical mirror 46b are mounted on the optical mirror mounting bracket.
The utility model discloses do not inject about the concrete structure of camera installing support, light source installing support and optical mirror installing support. In the specific implementation process, the adaptability can be adjusted according to the specific structures of the first detection mechanism 2 and the second detection mechanism 3 carried by the two mechanisms.
The invention has been described above with a certain degree of particularity and detail. It will be understood by those of ordinary skill in the art that the description of the embodiments is merely exemplary and that all changes that may be made without departing from the true spirit and scope of the present invention are intended to be within the scope of the present invention. The scope of the invention is defined by the appended claims rather than by the foregoing description of the embodiments.
Claims (10)
1. A detection mechanism is characterized in that: the detection mechanism is used for detecting the detected edge of the silicon wafer to be detected at the detection station, the detected edge comprises two opposite first surfaces, a second surface and an end face connected with the first surfaces and the second surface, the detection mechanism comprises a surface light source, an end face light source, a surface reflection mechanism, an end face reflection mechanism and a detection camera, wherein:
the surface light source is configured to emit surface illumination light to at least one surface of the edge under test, and the surface reflection mechanism is configured to reflect the surface illumination light reflected by the at least one surface to the detection camera;
the end face reflection mechanism is configured to reflect end face illumination light emitted by the end face light source to the end face of the edge to be detected, and the end face illumination light is reflected to the detection camera through the end face of the edge to be detected.
2. The detecting mechanism according to claim 1, wherein the plane of the detecting station is parallel to the horizontal plane, the silicon wafer to be detected is horizontally disposed, the first surface is an upper surface of a detected edge of the silicon wafer to be detected, and the second surface is a lower surface of the detected edge of the silicon wafer to be detected.
3. The sensing mechanism of claim 2, wherein:
the surface light source comprises an upper surface light source and a lower surface light source, the surface reflection mechanism comprises an upper surface reflection mechanism and a lower surface reflection mechanism, wherein:
the upper surface light source is arranged above the detection station and is configured to emit upper surface irradiation light rays to the upper surface of the detected edge, and the upper surface reflection mechanism is configured to reflect the upper surface irradiation light rays reflected by the upper surface of the detected edge to the detection camera;
the lower surface light source is arranged below the detection station, the lower surface light source is configured to emit lower surface irradiation light to the lower surface of the detected edge, and the lower surface reflection mechanism is configured to reflect the lower surface irradiation light reflected by the lower surface of the detected edge to the detection camera;
the end face reflection mechanism is arranged between the detection camera and the detection station, the end face light source is arranged on the side edge of the end face reflection mechanism, and the end face reflection mechanism is configured to reflect end face irradiation light emitted by the end face light source to the end face of the detected edge along the direction perpendicular to the end face of the detected edge.
4. The sensing mechanism of claim 3, wherein:
the optical path length of the upper surface irradiation light reflected to the detection camera from the upper surface of the detected edge, the optical path length of the lower surface irradiation light reflected to the detection camera from the lower surface of the detected edge and the optical path length of the end surface irradiation light reflected to the detection camera from the end surface of the detected edge are equal.
5. The sensing mechanism of claim 4, wherein:
the upper surface reflection mechanism comprises a first square prism, the first square prism is arranged between the upper surface light source and the detection station, and the first square prism is configured to horizontally reflect the upper surface irradiation light reflected by the upper surface of the detected edge to the detection camera;
the lower surface reflection mechanism comprises a second square prism, the second square prism is arranged between the lower surface light source and the detection station, and the second square prism is configured to horizontally reflect the lower surface irradiation light reflected by the lower surface of the detected edge to the detection camera;
the end face reflection mechanism comprises a third-party prism, the third-party prism is configured to reflect end face irradiation light emitted by the end face light source to the end face of the detected edge along the direction perpendicular to the end face of the detected edge, the end face of the detected edge horizontally reflects the end face irradiation light to the third-party prism, and the end face irradiation light enters the detection camera after passing through the third-party prism.
6. The sensing mechanism of claim 5, wherein:
a first cylindrical lens is arranged between the first square prism and the detection camera, the first square prism horizontally reflects the upper surface irradiation light reflected by the upper surface of the detected edge to the first cylindrical lens, and the upper surface irradiation light enters the detection camera after being transmitted by the first cylindrical lens;
the second square prism with be provided with the second cylinder lens between the detection camera, the second square prism will the lower surface irradiation light horizontal reflection of the lower surface reflection of being surveyed the edge extremely the second cylinder lens, the lower surface irradiation light warp get into after the transmission of second cylinder lens the detection camera.
7. A detection device, characterized by: the detection device includes a first detection mechanism and a second detection mechanism, which are the detection mechanisms of any one of claims 1 to 6, wherein:
first detection mechanism is used for detecting the first edge that is surveyed of the silicon chip that awaits measuring, second detection mechanism is used for detecting the second edge that is surveyed of the silicon chip that awaits measuring, first edge that is surveyed with the second is surveyed the edge and is do relative on the silicon chip that awaits measuring and with two parallel side edges of the direction of transmission of the silicon chip that awaits measuring.
8. The detection device of claim 7, wherein: the detection device further comprises a mounting support, the first detection mechanism and the second detection mechanism are mounted on the mounting support, the detection station of the first detection mechanism and the detection station of the second detection mechanism are located on the same plane, and in the transmission process, the first detected edge and the second detected edge of the silicon wafer to be detected can respectively enter and pass through the detection station of the first detection mechanism and the detection station of the second detection mechanism.
9. The detection apparatus according to claim 7 or 8, wherein: the first detection mechanism and the second detection mechanism are arranged in a front-back staggered mode in the transmission direction of the silicon wafer to be detected.
10. The detection device of claim 8, wherein: the mounting bracket comprises a translation guide rail, a first support frame and a second support frame, the first support frame and the second support frame are connected to the translation guide rail in a sliding mode, the first detection mechanism is installed on the first support frame, and the second detection mechanism is installed on the second support frame.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201921259625.4U CN210110712U (en) | 2019-08-06 | 2019-08-06 | Detection mechanism and detection device |
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| CN110379727A (en) * | 2019-08-06 | 2019-10-25 | 无锡奥特维科技股份有限公司 | A kind of testing agency and detection device |
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