CN210093124U - Control circuit suitable for high-power synchronous rectifier - Google Patents
Control circuit suitable for high-power synchronous rectifier Download PDFInfo
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- CN210093124U CN210093124U CN201921275120.7U CN201921275120U CN210093124U CN 210093124 U CN210093124 U CN 210093124U CN 201921275120 U CN201921275120 U CN 201921275120U CN 210093124 U CN210093124 U CN 210093124U
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Abstract
The utility model discloses a control circuit suitable for high-power synchronous rectifier, including error amplification circuit, high-pressure step-down voltage stabilizing circuit, PWM voltage comparator, band gap reference circuit, sawtooth wave generating circuit, logic control drive circuit, overcurrent protection circuit, excess temperature protection circuit and overvoltage crowbar, error amplifier connects feedback voltage and band gap reference circuit, error amplifier connects PWM voltage comparator, sawtooth wave generating circuit connects PWM voltage comparator, PWM voltage comparator and sawtooth wave generating circuit are connected to logic control drive circuit, high-pressure step-down voltage stabilizing circuit's voltage output end is connected to error amplifier, PWM voltage comparator, band gap reference circuit, sawtooth wave generating circuit, logic control drive circuit and overcurrent protection circuit, excess temperature protection circuit and overvoltage protection circuit. The utility model discloses make output voltage reduce along with the change of load current, input voltage, temperature and time, improved power conversion efficiency, power energy effective utilization.
Description
Technical Field
The utility model relates to a control circuit suitable for high-power synchronous rectifier belongs to the inside power supply technical field of DC-DC circuit.
Background
With the rapid development of internet technology, communication technology and microelectronic technology and the increasing demand of various industries on chips and digital signal processors, power management chips become more and more important. The requirements for various index parameters of a power management chip in application are higher and higher, for example, the power consumption in the chip is reduced, the efficiency of the chip is improved, the intellectualization, the reliability, the high integration degree and the like of the chip are realized, for a synchronous rectifier, the technology of rectifying by using a traditional diode is difficult to meet the requirements, the conduction voltage drop of the traditional rectifier tube is high, the generated power consumption is high, and the power conversion efficiency is low. However, if the synchronous rectification technology is adopted, not only the rectification efficiency can be greatly improved, but also the problems such as power consumption, efficiency, intellectualization, reliability, high integration and the like which cannot be solved by the traditional converter can be solved. The essence of the synchronous rectification technology is that the traditional diode is abandoned, the power MOSFET with low conduction resistance is used as a rectifier tube for rectification, the conduction loss is low, and the power conversion efficiency is high, so that the synchronous rectification technology is beneficial to improving the conversion efficiency of the whole system. Synchronous rectification is generally abbreviated as AC/DC, and is essentially a device that converts alternating current into direct current using power electronics, and is therefore also referred to as an AC/DC power conversion device. The control circuit is the core of the high-power synchronous rectifier, and has great influence on the signal processing performance of the circuit.
The control circuit in the high-power synchronous rectifier senses the output change through a voltage division network and then adjusts the duty ratio of a PWM signal to control the on and off of a power switch tube, so that the output is stable, and the control circuit mainly comprises an error amplification circuit, a high-voltage reduction and stabilization circuit, a PWM voltage comparator, a band gap reference circuit, a sawtooth wave generation circuit, a logic control driving circuit and a protection circuit, and is shown in figure 1.
Disclosure of Invention
The to-be-solved technical problem of the utility model is: the control circuit is suitable for a high-power synchronous rectifier and aims to solve the technical problems of low conversion efficiency, low reliability, high power consumption and the like of the high-power rectifier in the prior art.
The utility model discloses the technical scheme who takes does: a control circuit suitable for a high-power synchronous rectifier comprises an error amplifying circuit, a high-voltage step-down voltage stabilizing circuit, a PWM voltage comparator, a band-gap reference circuit, a sawtooth wave generating circuit, a logic control driving circuit, an overcurrent protection circuit, an over-temperature protection circuit and an overvoltage protection circuit, wherein the non-inverting input end of an error amplifier is connected with a feedback voltage FK, the non-inverting input end of the error amplifier is connected with a reference voltage Vref generated by the band-gap reference circuit, the non-inverting input end of the PWM voltage comparator is connected with an error voltage generated by the error amplifier, the non-inverting input end of the PWM voltage comparator is connected with the sawtooth wave signal end generated by the sawtooth wave generating circuit, the non-inverting input end of the PWM voltage comparator is connected with the non-inverting input end of the PWM voltage comparator, the PWM signal generated by the PWM voltage comparator is connected with the R end of an RS trigger, the pulse signal end generated by the sawtooth wave generating circuit is connected, the output end of the over-temperature protection circuit (OT) is connected with one input end of the three AND gates, the non-inverting input end and the inverting input end of the over-temperature protection circuit (OT) are respectively connected with a voltage Vptat and a reference voltage Vref3 which are in direct proportion to the temperature, the output end of the over-temperature protection circuit (OT) is connected with one input end of the three AND gates, the non-inverting input end and the inverting input end of the over-voltage protection circuit (OV) are respectively connected with a drain voltage Vin and a reference voltage Vref1 of a power switch, the output end of the over-temperature protection circuit (OV) is connected with one input end of the three AND gates, the voltage output end of the high-voltage step-down voltage stabilizing circuit is connected with an error amplifier, a PWM voltage comparator, a band gap reference circuit, a sawtooth wave generation circuit, a logic control driving circuit, an over-temperature protection circuit and the power, the output end of the logic control driving circuit is OUT.
Preferably, the error amplifying circuit includes a differential input stage circuit, a common source amplifying circuit, a bias circuit, and an RC miller compensation circuit, an output terminal of the differential input stage circuit is connected to the common source amplifying circuit, and an output terminal of the common source amplifying circuit is connected to the bias circuit and the RC miller compensation circuit.
Preferably, the high-voltage step-down voltage stabilizing circuit comprises a rectifier bridge, a high-voltage charging module, a band-gap reference module and a linear voltage stabilizing module, wherein the rectifier bridge adopts bridge rectification, the bridge rectification circuit is composed of four LDMOS (laterally diffused metal oxide semiconductor) tubes, the output end of the bridge rectification circuit is connected to the high-voltage charging module, the high-voltage charging module is connected to the band-gap reference module, and the band-gap reference module is connected to the linear voltage stabilizing.
The utility model has the advantages that: compared with the prior art, the utility model has the advantages that the output is fed back to the control circuit to adjust the output voltage, so that the output voltage is reduced along with the changes of the load current, the input voltage, the temperature and the time, and the power conversion efficiency and the effective utilization rate of the power energy are improved; the technical problems of low conversion efficiency, low reliability, high power consumption and the like of a high-power rectifier in the prior art are solved.
Drawings
FIG. 1 is a schematic structural view of the present invention;
FIG. 2 is a schematic diagram of an error amplifier;
FIG. 3 is a schematic diagram of a high-voltage step-down and voltage-stabilizing structure;
fig. 4 is a schematic diagram of a bandgap reference structure.
Detailed Description
The present invention will be further described with reference to the accompanying drawings and specific embodiments.
Example (b): as shown in FIGS. 1-4, a control circuit for a high-power synchronous rectifier comprises an error amplifying circuit, a high-voltage step-down voltage stabilizing circuit, a PWM voltage comparator, a band-gap reference circuit, a sawtooth wave generating circuit, a logic control driving circuit, an overcurrent protection circuit, an overtemperature protection circuit and an overvoltage protection circuit, wherein the non-inverting input end of the error amplifier is connected with a feedback voltage FK, the reference voltage Vref generated by the band-gap reference circuit is connected with the inverting input end of the error amplifier, the error voltage generated by the error amplifier is connected with the inverting input end of the PWM voltage comparator, the sawtooth wave signal end generated by the sawtooth wave generating circuit is connected with the non-inverting input end of the PWM voltage comparator, the PWM signal generated by the PWM voltage comparator is connected with the R end of the RS trigger, the pulse signal end generated by the sawtooth wave generating circuit is connected with the S end of the RS trigger, the PWM signal controls a power switch tube after, the in-phase input end and the reverse-phase input end of an over-current protection circuit (OC) are respectively connected with a sampling voltage Sense and a reference voltage Vref2, the output end of the over-current protection circuit (OC) is connected with one input end of a three-AND gate, the in-phase input end and the reverse-phase input end of an over-temperature protection circuit (OT) are respectively connected with a voltage Vptat and a reference voltage Vref3 which are in direct proportion to the temperature, the output end of the over-temperature protection circuit (OT) is connected with one input end of the three-AND gate, the in-phase input end and the reverse-phase input end of an over-voltage protection circuit (OV) are respectively connected with a drain voltage Vin and a reference voltage Vref1 of a power switch, the output end of a high-voltage step-down voltage stabilizing circuit is connected with an error amplifier, a PWM voltage comparator, a band-gap reference circuit, a sawtooth wave generation circuit, the output ends of the over-current protection circuit, the over-temperature protection circuit and the overvoltage protection circuit are connected to the logic control driving circuit, and the output end of the logic control driving circuit is OUT.
As shown in fig. 2, the error amplification circuit includes a differential input stage circuit, a common source amplification circuit, a bias circuit and an RC miller compensation circuit, an output end of the differential input stage circuit is connected to the common source amplification circuit, an output end of the common source amplification circuit is connected to the bias circuit and the RC miller compensation circuit, the error amplification circuit (error amplifier) is a two-stage operational amplifier, a first part is the differential input stage circuit, and the differential input circuit can effectively suppress common-mode signals, reduce input offset voltage of the circuit, and also play a role in temperature compensation, thereby stabilizing a static operating point; the second part adopts a common source amplifying circuit as a gain stage, so that the gain of the operational amplifier can be improved; the third part of the bias circuit mainly provides static bias and acts as an active load; in fig. 2, the differential input stage circuit adopts a differential input structure and is composed of M1 and M2, M3 and M4 form a mirror current source as an active load of differential input, M5 provides bias current for M1 and M2 and serves as an active load of differential input, wherein VF is an output feedback voltage of the synchronous rectifier, Vref is a bandgap reference voltage, and output VE is an error voltage. The output stage is a common source amplifying circuit and consists of M6 and M7, M6 is an amplifying tube, M7 provides bias for M6 and serves as an active load of M6, the phase compensation circuit consists of R, C and forms RC (resistance-capacitance) Miller compensation, the bias circuit consists of M8, M9, M10, M11, M12, M13 and RB, and the bias current is IB.
Wherein, as shown in fig. 3, the high voltage step-down voltage stabilizing circuit comprises a rectifier bridge, a high voltage charging module, a band gap reference module and a linear voltage stabilizing module, which are used for providing a working power supply for a low voltage module of the chip, the rectifier bridge adopts bridge rectification, a bridge rectifier circuit consisting of four LDMOS tubes, the output end is connected to the high voltage charging module, the high voltage charging module is connected to the band gap reference module, the band gap reference module is connected to the linear voltage stabilizing module, the high voltage charging module consists of an RC charging circuit, the voltage values at two ends of a capacitor are used as the voltage required by the band gap reference when working and as the voltage required by the hysteresis detection circuit when working, the band gap reference consists of a starting circuit, a current source circuit, a temperature compensation circuit and a high gain secondary operational amplifier, the linear voltage stabilizing module consists of a reference circuit, an operational amplifier, a resistor and an, the output power supply is stabilized.
The PWM voltage comparator is realized by directly adding a first-stage inverter to the error amplifier, namely, the input-stage amplifying circuit is a PMOS differential input pair, wherein the inverting input end is the error voltage amplified by the error amplifier, the non-inverting input end is a sawtooth wave signal generated by the oscillating circuit, and the current source is used as an active load to provide constant bias current for the first stage. The output stage is a common source amplifying circuit, and the current source provides required bias current for the output stage and is used as an active load of the output stage. The phase compensation circuit consists of R, C and forms RC Miller compensation, the output stage consists of a common source amplifying circuit and an inverter, and the PWM voltage comparator is used for comparing the error voltage with the sawtooth wave signal to generate a PWM signal and controlling the on-off of the power switch tube by utilizing the duty ratio of the PWM signal.
As shown in fig. 4, the bandgap reference circuit generates a stable reference voltage, and the generated reference voltage is required to be insensitive to temperature and power voltage, the bandgap reference circuit is composed of four parts, which are a start-up circuit, a current source circuit proportional to temperature, a temperature compensation circuit inversely proportional to temperature, and a high-gain secondary operational amplifier, the start-up circuit is mainly because the bandgap reference circuit has degeneracy points, and the start-up circuit is added in the circuit to avoid the degeneracy points; the current source which is in direct proportion to the temperature generates a voltage which is in direct proportion to the temperature and is converted into a current which is in direct proportion to the temperature through the resistor; the temperature compensation circuit utilizes the positive temperature characteristic generated by a current source circuit with the negative temperature characteristic of the emitter junction voltage in direct proportion to the temperature to compensate, and finally obtains a reference voltage irrelevant to the temperature, in the figure, a starting circuit is composed of MP0, MN0 and MN1, mainly because the bandgap reference circuit has degeneracy points, in order to avoid the degeneracy points, a starting circuit is added into the circuit, the working principle is that when the circuit is just powered on, the power voltage leads MP0 to be conducted through MP0, the MP0 is conducted to lead the grid potential of MN1 to be pulled high, MN1 is conducted, the current source composed of MP1 and MP2 is started, the current source enters the working state, the bandgap reference circuit is started to work normally, after the bandgap reference circuit enters the normal working state, the grid potential of MN0 is pulled high to lead MN0 to be conducted, the conduction of MN0 leads the grid potential of MN1 to be reduced, MN1 is cut off, thus the starting circuit and the bandgap reference circuit are cut off, the function of starting isolation is realized; the current source circuit proportional to the temperature is composed of MP1, MP2,R0Q0 and Q1, the high gain secondary operational amplifier makes the potentials of the point A and the point B the same, generates a voltage proportional to the temperature, and passes throughR0Converting into a current proportional to temperature; the temperature compensation circuit is composed ofR1And Q2, wherein Q2 is connected into a diode form, and the compensation is carried out by utilizing the positive temperature characteristic generated by the current source circuit, wherein the negative temperature characteristic of the emitter junction voltage is in direct proportion to the temperature, and finally, a reference voltage which is irrelevant to the temperature is obtained.
The sawtooth wave generating circuit is used for generating sawtooth wave signals and clock signals, and consists of four parts, namely a voltage comparator, a charging and discharging circuit, an inverter, an NAND gate and a current generating circuit. The charge-discharge circuit mainly utilizes high and low levels output by the phase inverter to charge and discharge the capacitor to realize the function of the charge-discharge circuit, the current generation circuit mainly provides static current required by work for the voltage comparator, the voltage comparator compares a sawtooth wave signal generated by the charge-discharge of the capacitor with reference voltage to generate a pulse signal, the voltage comparator adopts the PWM voltage amplifier, the output of the PWM voltage amplifier is connected with the phase inverter, and the phase inverter and the NAND gate mainly realize the logic conversion of the levels and enhance the gate drive of the lower-level MOS tube.
The logic control driving circuit can reduce the electromagnetic interference brought by the transformer on the one hand, improve the driving capability on the other hand, and can control the power switch tube to be turned off through the level when overcurrent, overvoltage or overheating occurs, the logic control driving circuit is composed of a three-input AND gate, a two-input AND gate, an RS trigger and five NOT gates as shown by a dotted line frame in figure 1, wherein three inputs of the three-input AND gate are respectively connected with the Output (OC) of the overcurrent protection circuit, the Output (OV) of the overvoltage protection circuit and the Output (OT) of the overheat protection circuit, the output of the three-input AND gate is connected with one input end of the two-input AND gate, the other input end of the two-input AND gate is connected with the output end Q of the RS trigger, and the inputs of the RS trigger are respectively connected with the PWM signal generated by the PWM voltage comparator and the pulse signal generated, the four inverters are used for increasing the driving capability and finally driving the LDMOS switch tube.
The overvoltage, overcurrent and overtemperature protection circuit is used for protecting the chip when the chip is in overvoltage, overcurrent and overtemperature. When overvoltage does not occur, the output OV is at a low level, the output OV is at a high level through the logic control circuit, and the power switch tube works normally; when the input voltage rises to be larger than the set value of overvoltage protection, the output OV is high level, the output OV is low level through the logic control circuit, the power switch tube of the power tube is cut off, the chip stops working, when the voltage drops to the set protection value, the output of the voltage comparator is low level, the output of the voltage comparator is high level through the logic control circuit, and the power switch tube restores to normal working. When no overcurrent occurs, the voltage sense is smaller than the reference voltage, the output OC is a high level, and the power switch tube normally works after passing through the logic control circuit; when the voltage sense is greater than the reference voltage, the output is low level, and the power switch tube is always in a cut-off state after passing through the logic control circuit, so that the protection effect is achieved. For the over-temperature protection circuit, Vptat as labeled in fig. 1 is compared with the reference voltage Vref, and the output signal OT of the voltage comparator controls the on and off of the power switch tube. When the temperature of the chip is in the temperature range of normal work of the chip, at the moment, Vptat is less than Vref, the output OT of the comparator is high level, after passing through the logic control circuit, the power switch tube works normally, and the over-temperature protection circuit does not act; when the temperature of the chip exceeds the temperature range set in normal work, Vptat is larger than Vref, the output OT of the voltage comparator is low level, after passing through the logic control circuit, the power switch tube is cut off, and the over-temperature protection circuit has the over-temperature protection function.
The above description is only for the specific embodiments of the present invention, but the protection scope of the present invention is not limited thereto, and any person skilled in the art can easily think of the changes or substitutions within the technical scope of the present invention, and all should be covered within the protection scope of the present invention, therefore, the protection scope of the present invention should be subject to the protection scope of the claims.
Claims (3)
1. A control circuit suitable for a high-power synchronous rectifier is characterized in that: the device comprises an error amplifying circuit, a high-voltage-reducing and stabilizing circuit, a PWM (pulse-width modulation) voltage comparator, a band-gap reference circuit, a sawtooth wave generating circuit, a logic control driving circuit, an overcurrent protection circuit, an overtemperature protection circuit and an overvoltage protection circuit, wherein the non-inverting input end of the error amplifier is connected with a feedback voltage FK, a reference voltage Vref generated by the band-gap reference circuit is connected with the inverting input end of the error amplifier, the error voltage generated by the error amplifier is connected with the inverting input end of the PWM voltage comparator, the sawtooth wave signal end generated by the sawtooth wave generating circuit is connected with the non-inverting input end of the PWM voltage comparator, the PWM signal generated by the PWM voltage comparator is connected with the R end of an RS trigger, the pulse signal end generated by the sawtooth wave generating circuit is connected with the S end of the RS trigger, the non-inverting input end and the inverting input end of the overcurrent protection circuit are respectively connected, the over-temperature protection circuit is characterized in that a non-inverting input end and an inverting input end of the over-temperature protection circuit are respectively connected with a voltage Vptat and a reference voltage Vref3 which are in direct proportion to the temperature, an output end of the over-temperature protection circuit is connected with an input end of a three-AND gate, a non-inverting input end and an inverting input end of the over-temperature protection circuit are respectively connected with a drain voltage Vin and a reference voltage Vref1 of a power switch tube, an output end of the over-temperature protection circuit is connected with a power supply end of the three-AND gate, a voltage output end of the high-voltage step-down voltage stabilizing circuit is connected with an error amplifier, a PWM voltage comparator, a band-gap reference circuit, a sawtooth wave generation circuit, a logic control driving circuit, an over-temperature protection circuit and an over-voltage protection circuit, output ends of the PWM voltage comparator, the sawtooth.
2. The control circuit for high power synchronous rectifiers as claimed in claim 1, wherein: the error amplification circuit comprises a differential input stage circuit, a common source amplification circuit, a bias circuit and an RC (resistance-capacitance) Miller compensation circuit, wherein the output end of the differential input stage circuit is connected to the common source amplification circuit, and the output end of the common source amplification circuit is connected to the bias circuit and the RC Miller compensation circuit.
3. The control circuit for high power synchronous rectifiers as claimed in claim 1, wherein: the high-voltage step-down voltage stabilizing circuit comprises a rectifier bridge, a high-voltage charging module, a band-gap reference module and a linear voltage stabilizing module, wherein the rectifier bridge adopts bridge rectification, the bridge rectification circuit is composed of four LDMOS (laterally diffused metal oxide semiconductor) tubes, the output end of the bridge rectification circuit is connected to the high-voltage charging module, the high-voltage charging module is connected to the band-gap reference module, and the band-gap reference module is connected to the linear.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201921275120.7U CN210093124U (en) | 2019-08-08 | 2019-08-08 | Control circuit suitable for high-power synchronous rectifier |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201921275120.7U CN210093124U (en) | 2019-08-08 | 2019-08-08 | Control circuit suitable for high-power synchronous rectifier |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111983418A (en) * | 2020-08-28 | 2020-11-24 | 无锡英迪芯微电子科技股份有限公司 | PN junction voltage detection system of LED |
| CN113783483A (en) * | 2021-09-29 | 2021-12-10 | 苏州达思灵新能源科技有限公司 | Control system and control method for electro-magnetic doubly salient direct-current generator |
| CN117711290A (en) * | 2023-11-14 | 2024-03-15 | 海信家电集团股份有限公司 | Gate driving chip, voltage protection method thereof and electronic equipment |
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2019
- 2019-08-08 CN CN201921275120.7U patent/CN210093124U/en active Active
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111983418A (en) * | 2020-08-28 | 2020-11-24 | 无锡英迪芯微电子科技股份有限公司 | PN junction voltage detection system of LED |
| CN111983418B (en) * | 2020-08-28 | 2022-01-28 | 无锡英迪芯微电子科技股份有限公司 | PN junction voltage detection system of LED |
| CN113783483A (en) * | 2021-09-29 | 2021-12-10 | 苏州达思灵新能源科技有限公司 | Control system and control method for electro-magnetic doubly salient direct-current generator |
| CN113783483B (en) * | 2021-09-29 | 2022-06-21 | 苏州达思灵新能源科技有限公司 | Control system and control method for electro-magnetic doubly salient direct-current generator |
| CN117711290A (en) * | 2023-11-14 | 2024-03-15 | 海信家电集团股份有限公司 | Gate driving chip, voltage protection method thereof and electronic equipment |
| CN117711290B (en) * | 2023-11-14 | 2024-05-17 | 海信家电集团股份有限公司 | Gate driving chip, voltage protection method thereof and electronic equipment |
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