CN210041772U - Surface acoustic wave resonator and surface acoustic wave filter - Google Patents
Surface acoustic wave resonator and surface acoustic wave filter Download PDFInfo
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- CN210041772U CN210041772U CN201921277229.4U CN201921277229U CN210041772U CN 210041772 U CN210041772 U CN 210041772U CN 201921277229 U CN201921277229 U CN 201921277229U CN 210041772 U CN210041772 U CN 210041772U
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- 238000010897 surface acoustic wave method Methods 0.000 title claims abstract description 74
- 230000002265 prevention Effects 0.000 claims abstract description 22
- 230000005611 electricity Effects 0.000 claims abstract description 6
- 230000000737 periodic effect Effects 0.000 claims abstract description 6
- 230000000694 effects Effects 0.000 description 4
- 238000003491 array Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Abstract
The utility model provides a surface acoustic wave syntonizer and surface acoustic wave filter, including the base plate, set up the interdigital transducer on the base plate and be located the reflection grating array of interdigital transducer length direction both sides, the interdigital transducer includes interdigital bus electrode portion and converges electrode portion electricity with the interdigital and be the interdigital electrode portion of periodic distribution, the reflection grating array includes that the grating converges electrode portion and converges electrode portion electricity with the grating array and be the grating finger electrode portion of periodic distribution, the grating converges electrode portion and interdigital and converges electrode portion corresponding, the grating finger electrode portion with interdigital electrode portion is corresponding, the grating bus electrode portion with be provided with at least one between the interdigital bus electrode portion and prevent the energy leakage portion to prevent that the surface acoustic wave energy from revealing. Therefore, the surface acoustic wave energy of the surface acoustic wave resonator can be prevented from leaking through the energy leakage prevention part, so that the Q value of the surface acoustic wave resonator can be improved, and the performance of the surface acoustic wave resonator is improved.
Description
Technical Field
The utility model relates to a syntonizer technical field, concretely relates to surface acoustic wave syntonizer and a surface acoustic wave filter including this surface acoustic wave syntonizer.
Background
In a communication radio frequency front-end module, a surface acoustic wave filter is a core device of the communication radio frequency front-end module. The surface acoustic wave filter is constructed by a series of surface acoustic wave resonators, and the Q value of the resonators determines the performance of the filter, so that the improvement of the Q value of the surface acoustic wave resonators is one of the research hotspots in the field.
The leakage of acoustic energy is an important factor that causes the Q value of the surface acoustic wave resonator to decrease. At the two ends of the resonator acoustic aperture, the metal bus bar is connected with the electrode finger bar, and the surface acoustic wave speed in the bus bar area is usually lower than that in the interdigital transducer and the reflection grating array, so that the outward propagation of acoustic energy can be limited. However, at the joint of the surface acoustic wave resonator transducer and the grating array, the bus bar is disconnected, namely, the bus bar is a gap of a free surface, the surface acoustic wave speed of the bus bar is higher than that of the interdigital transducer and the reflection grating array, and an acoustic energy leakage channel is formed. In the prior art, the gap is a rectangular straight channel or a channel with a larger opening, and acoustic energy at the position is allowed to leak without being blocked.
SUMMERY OF THE UTILITY MODEL
The utility model discloses aim at solving one of the technical problem that exists among the prior art at least, provide a surface acoustic wave syntonizer and a surface acoustic wave filter including this surface acoustic wave syntonizer.
The utility model discloses an aspect provides a surface acoustic wave syntonizer, be in including base plate, setting interdigital transducer on the base plate and be located the reflection grating array of interdigital transducer length direction both sides, the interdigital transducer include interdigital bus electrode portion and with interdigital bus electrode portion electricity is connected and is the interdigital electrode portion of periodic distribution, the reflection grating array include grating bus electrode portion and with grating bus electrode portion electricity is connected and is the grating electrode portion of periodic distribution, grating bus electrode portion with interdigital bus electrode portion is corresponding, grating bus electrode portion with interdigital electrode portion is corresponding, grating bus electrode portion with be provided with at least one between the interdigital bus electrode portion and prevent the energy leakage portion to prevent that the surface acoustic wave energy from revealing.
Optionally, the energy leakage prevention part comprises a protrusion part extending from the interdigital bus electrode part to a direction close to the grid array bus electrode part and a recess part recessed from the grid array bus electrode part to a direction far away from the interdigital bus electrode part, and the protrusion part extends into the recess part.
Alternatively, the projection portion is formed integrally with the interdigital bus electrode portion.
Optionally, the recessed portion includes a bottom wall and two side walls extending from the bottom wall to a direction close to the interdigital bus electrode portion, the protruding portion is interposed between the two side walls, and there is a region where the protruding portion and the two side walls overlap each other.
Optionally, the length of the region where the protrusion and the two sidewalls overlap each other ranges from 1 to 5 interdigital electrodes of the transducer.
Optionally, the protrusions are arranged at an insulating interval from both the side walls and the bottom wall, and the interval between two adjacent protrusions and the bottom wall is 1/4 cycles of the interdigital electrodes of the transducer.
Optionally, the transducer interdigital electrode period is a distance between centers of two adjacent interdigital electrode portions.
Optionally, the energy leakage prevention part comprises a protrusion part extending from the grid array bus electrode part to be close to the interdigital bus electrode part and a recess part recessed from the interdigital bus electrode part to a direction far away from the grid array bus electrode part, and the protrusion part extends into the recess part.
Optionally, a plurality of the energy leakage prevention parts are arranged between the grid array bus electrode part and the interdigital bus electrode part, and the energy leakage prevention parts are arranged at equal intervals.
A second aspect of the present invention provides a surface acoustic wave filter, including the surface acoustic wave resonator described above.
The utility model discloses a surface acoustic wave syntonizer and surface acoustic wave filter, it is provided with at least one between grid array bus electrode portion and interdigital bus electrode portion and prevents the energy leakage portion, like this, can prevent the surface acoustic wave energy of surface acoustic wave syntonizer to reveal through the energy leakage portion of preventing that sets up to can improve the Q value of surface acoustic wave syntonizer, improve the performance of surface acoustic wave syntonizer.
Drawings
Fig. 1 is a schematic structural diagram of the surface acoustic wave resonator of the present invention.
Detailed Description
In order to make the technical solution of the present invention better understood by those skilled in the art, the present invention will be described in further detail with reference to the accompanying drawings and specific embodiments.
As shown in fig. 1, a first aspect of the present invention provides a surface acoustic wave resonator 100, where the surface acoustic wave resonator 100 includes a substrate 110, an interdigital transducer 120 disposed on the substrate 110, and reflection grating arrays 130 located on two sides of the interdigital transducer 120 in the length direction, that is, as shown in fig. 1, the reflection grating arrays 130 are disposed on the left and right sides of the interdigital transducer 120. The interdigital transducer 120 includes an interdigital bus electrode portion 121 and interdigital electrode portions 122 electrically connected to the interdigital bus electrode portion 121 and distributed periodically. The reflective grid array 130 includes a grid bus electrode portion 131 and grid finger electrode portions 132 electrically connected to the grid bus electrode portion 131 and periodically distributed. The gate bus electrode portion 131 corresponds to the interdigital bus electrode portion 121, and the gate bus electrode portion 132 corresponds to the interdigital electrode portion 122, that is, as shown in fig. 1, the gate bus electrode portion 131 and the interdigital bus electrode portion 121 are both located at the upper and lower portions in fig. 1, and the gate bus electrode portion 132 and the interdigital electrode portion 122 are both located at the middle portion in fig. 1. At least one energy leakage prevention part 140 is arranged between the grid array bus electrode part 131 and the interdigital bus electrode part 121 to prevent the surface acoustic wave energy from leaking.
In the surface acoustic wave resonator 100 having the structure of the present embodiment, at least one energy leakage prevention section 140 is provided between the gate bus electrode section 131 and the interdigital bus electrode section 121, so that the surface acoustic wave energy leakage of the surface acoustic wave resonator 100 can be prevented by the energy leakage prevention section 140, thereby improving the Q value of the surface acoustic wave resonator 100 and improving the performance of the surface acoustic wave resonator 100.
The specific structure of the energy leakage prevention unit 140 is not particularly limited as long as it can prevent energy from leaking between the gate bus electrode unit 131 and the interdigital bus electrode unit 121.
Specifically, as shown in fig. 1, the energy leakage prevention portion 140 includes a protrusion 141 extending from the interdigital bus electrode portion 121 in a direction close to the gate bus electrode portion 131, and a recess 142 recessed from the gate bus electrode portion 131 away from the interdigital bus electrode portion 121, the protrusion 141 protruding into the recess 142. Thus, when the surface acoustic wave leaks upward or downward along the gap between the interdigital electrode parts 121 of the interdigital transducer 120, the energy leakage prevention part 140 formed by the protrusion 141 and the recess 142 provided can prevent the leakage of the surface acoustic wave energy of that part, so that the Q value of the surface acoustic wave resonator 100 can be increased, and the performance of the surface acoustic wave resonator 100 can be improved.
The energy leakage prevention unit 140 may have another structure than the above structure, for example, the energy leakage prevention unit may include a protrusion extending from the gate bus electrode portion 131 toward the interdigital bus electrode portion 121 and a recess recessed from the interdigital bus electrode portion 121 in a direction away from the gate bus electrode portion 131, and the protrusion may protrude into the recess, thereby preventing the surface acoustic wave energy leakage.
In order to simplify the structure of the surface acoustic wave resonator 100, the projection 141 is formed integrally with the interdigital bus electrode portion 121.
In order to further improve the effect of preventing energy leakage, as shown in fig. 1, the recess 142 includes a bottom wall 142a and two side walls 142b extending from the bottom wall 142a to a direction close to the interdigital bus electrode part 121, the projection 141 is interposed between the two side walls 142b, and there is a region where the projection 141 and the two side walls 142b overlap with each other, that is, as shown in fig. 1, orthographic projections of the two side walls 142b on the projection 141 have portions falling within the range of the projection 141, so that the effect of preventing leakage of surface acoustic wave energy can be improved.
In order to further improve the effect of preventing energy leakage, the length of the overlapping region between the protrusion 141 and the two sidewalls 142b is in the range of 1 to 5 interdigital electrodes of the transducer.
As shown in fig. 1, the projections 141 are disposed at insulating intervals from both the sidewalls 142b and the bottom wall 142a, so that the projections 141 can be prevented from being shorted with both the sidewalls 142b and the bottom wall 142a, and the performance of the surface acoustic wave resonator 100 can be further improved.
Specifically, the interval between the projection 141 and the bottom wall 142a may be 1/4 transducer interdigital electrode periods T, and the interval between the projection 141 and the two side walls 142b may be 1/4 transducer interdigital electrode periods T. Of course, in addition, the interval between the protruding portion 141 and the bottom wall 142a may also be selected from other values, and the interval between the protruding portion 141 and the two side walls 142b may also be selected from other values, which may be determined according to actual needs.
Note that the transducer interdigital electrode period T is a distance between centers of two adjacent interdigital electrode portions 121.
In order to further enhance the energy leakage prevention effect of the surface acoustic wave resonator 100, a plurality of energy leakage prevention portions 140 may be provided between the gate bus electrode portion 131 and the interdigital bus electrode portion 121, and the plurality of energy leakage prevention portions 140 may be provided at equal intervals.
In a second aspect of the present invention, a surface acoustic wave filter (not shown in the drawings) is provided, including the surface acoustic wave resonator 100 described above, and the structure of the surface acoustic wave resonator 100 can specifically refer to the related descriptions above, which is not described herein again.
In the surface acoustic wave filter having the structure of the present embodiment, specifically, in the surface acoustic wave resonator 100 described above, at least one energy leakage prevention portion 140 is provided between the gate bus electrode portion 131 and the interdigital bus electrode portion 121, so that the surface acoustic wave energy leakage of the surface acoustic wave resonator 100 can be prevented by the energy leakage prevention portion 140, thereby increasing the Q value of the surface acoustic wave resonator 100 and improving the performance of the surface acoustic wave resonator 100.
It is to be understood that the above embodiments are merely exemplary embodiments that have been employed to illustrate the principles of the present invention, and that the present invention is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.
Claims (10)
1. The utility model provides a surface acoustic wave resonator, includes the base plate, sets up interdigital transducer on the base plate and be located the reflection grating array of interdigital transducer length direction both sides, interdigital transducer include interdigital bus electrode portion and with interdigital bus electrode portion electricity is connected and is the interdigital electrode portion of periodic distribution, the reflection grating array include grid array bus electrode portion and with grid array bus electrode portion electricity is connected and is the grid array finger electrode portion of periodic distribution, grid array bus electrode portion with interdigital bus electrode portion is corresponding, grid array finger electrode portion with interdigital electrode portion is corresponding, its characterized in that, grid array bus electrode portion with be provided with at least one between the interdigital bus electrode portion and prevent the energy leakage portion to prevent that the surface acoustic wave energy from leaking.
2. The surface acoustic wave resonator according to claim 1, wherein said energy leak prevention portion comprises a projection extending from said interdigital bus electrode portion toward a direction close to said gate array bus electrode portion and a recess recessed from said gate array bus electrode portion toward a direction away from said interdigital bus electrode portion, said projection projecting into said recess.
3. A surface acoustic wave resonator according to claim 2, wherein said projection is formed integrally with said interdigital bus electrode portion.
4. The surface acoustic wave resonator according to claim 2, wherein said recess portion includes a bottom wall and two side walls extending from said bottom wall in a direction approaching said interdigital bus electrode portion, said projection portion is interposed between said two side walls, and there is a region where said projection portion and said two side walls overlap each other.
5. A surface acoustic wave resonator according to claim 4, wherein a length of a region where said projection and both of said side walls overlap each other is in a range of 1 to 5 transducer interdigital electrode periods.
6. A surface acoustic wave resonator according to claim 5, wherein said projections are provided at insulating intervals from both of said side walls and said bottom wall, and wherein an interval between adjacent two of said projections and said bottom wall is 1/4 cycles of said transducer interdigital electrode.
7. A surface acoustic wave resonator according to claim 6, wherein said transducer interdigital electrode period is a distance between centers of adjacent two interdigital electrode portions.
8. The surface acoustic wave resonator according to any one of claims 1 to 7, wherein the energy leakage prevention portion comprises a projection extending from the gate array bus electrode portion toward the interdigital bus electrode portion and a recess recessed from the interdigital bus electrode portion in a direction away from the gate array bus electrode portion, the projection projecting into the recess.
9. The surface acoustic wave resonator according to any one of claims 1 to 7, wherein a plurality of the energy leakage prevention portions are provided between the gate bus electrode portion and the interdigital bus electrode portion, and the plurality of energy leakage prevention portions are provided at equal intervals.
10. A surface acoustic wave filter comprising the surface acoustic wave resonator according to any one of claims 1 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921277229.4U CN210041772U (en) | 2019-08-08 | 2019-08-08 | Surface acoustic wave resonator and surface acoustic wave filter |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921277229.4U CN210041772U (en) | 2019-08-08 | 2019-08-08 | Surface acoustic wave resonator and surface acoustic wave filter |
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| Publication Number | Publication Date |
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| CN210041772U true CN210041772U (en) | 2020-02-07 |
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| CN201921277229.4U Active CN210041772U (en) | 2019-08-08 | 2019-08-08 | Surface acoustic wave resonator and surface acoustic wave filter |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116318036A (en) * | 2023-05-15 | 2023-06-23 | 成都频岢微电子有限公司 | Surface acoustic wave resonator, surface acoustic wave filter, and duplexer |
| CN116938188A (en) * | 2023-09-15 | 2023-10-24 | 广州市艾佛光通科技有限公司 | Surface acoustic wave resonator device, surface acoustic wave filter device and electronic equipment |
-
2019
- 2019-08-08 CN CN201921277229.4U patent/CN210041772U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116318036A (en) * | 2023-05-15 | 2023-06-23 | 成都频岢微电子有限公司 | Surface acoustic wave resonator, surface acoustic wave filter, and duplexer |
| CN116318036B (en) * | 2023-05-15 | 2023-09-22 | 成都频岢微电子有限公司 | Surface acoustic wave resonator, surface acoustic wave filter, and duplexer |
| CN116938188A (en) * | 2023-09-15 | 2023-10-24 | 广州市艾佛光通科技有限公司 | Surface acoustic wave resonator device, surface acoustic wave filter device and electronic equipment |
| CN116938188B (en) * | 2023-09-15 | 2024-01-09 | 广州市艾佛光通科技有限公司 | Surface acoustic wave resonator device, surface acoustic wave filter device and electronic equipment |
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Address after: 213017, 7th floor, Building 3, No. 5 Chuangzhi Road, Tianning District, Changzhou City, Jiangsu Province Patentee after: Zuolanwei (Jiangsu) Electronic Technology Co.,Ltd. Country or region after: China Address before: 310018 room b711-714, building 2, No. 452, Baiyang street, Hangzhou Economic and Technological Development Zone, Hangzhou, Zhejiang Patentee before: HANGZHOU SAPPLAND MICROELECTRONICS TECHNOLOGY Co.,Ltd. Country or region before: China |
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