CN210040199U - Structure of high-performance DOB light source - Google Patents
Structure of high-performance DOB light source Download PDFInfo
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- CN210040199U CN210040199U CN201921312113.XU CN201921312113U CN210040199U CN 210040199 U CN210040199 U CN 210040199U CN 201921312113 U CN201921312113 U CN 201921312113U CN 210040199 U CN210040199 U CN 210040199U
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- layer
- heat conducting
- constant current
- aluminum substrate
- light source
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- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 62
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 59
- 239000000758 substrate Substances 0.000 claims abstract description 45
- 239000003292 glue Substances 0.000 claims abstract description 21
- 229910000679 solder Inorganic materials 0.000 claims abstract description 12
- 238000009413 insulation Methods 0.000 claims abstract description 9
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000010931 gold Substances 0.000 claims abstract description 8
- 229910052737 gold Inorganic materials 0.000 claims abstract description 8
- 239000010410 layer Substances 0.000 claims description 76
- 239000012790 adhesive layer Substances 0.000 claims description 11
- 241000218202 Coptis Species 0.000 claims description 4
- 235000002991 Coptis groenlandica Nutrition 0.000 claims description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical group Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 4
- 238000010276 construction Methods 0.000 claims 3
- 239000004593 Epoxy Substances 0.000 claims 1
- 230000002035 prolonged effect Effects 0.000 abstract description 16
- 230000017525 heat dissipation Effects 0.000 abstract description 11
- 239000004411 aluminium Substances 0.000 abstract description 7
- 229920005989 resin Polymers 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical compound [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- 239000005864 Sulphur Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004073 vulcanization Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- Led Device Packages (AREA)
Abstract
The utility model discloses a structure of DOB light source of high performance, include: the LED chip comprises an aluminum substrate, a constant current driving chip, a fluorescent glue layer, gold wires, a BT insulating layer, a light-emitting wafer and a heat conducting fin which are respectively bonded on the aluminum substrate, a circuit layer arranged on the BT insulating layer, a solder resist ink layer and an organic transparent layer; the BT insulation layer is provided with a heat conduction hole, the heat conduction sheet is arranged in the heat conduction hole, and the constant current driving chip is arranged above the heat conduction hole. The utility model discloses a with the conducting strip setting between constant current driver chip and aluminium base board, the conducting strip can pass to aluminium base board with the heat that constant current driver chip produced to strengthen the heat dissipation of constant current driver chip, prolonged the required electronic components's of constant current drive life-span, prolonged the life-span of DOB light source then. The organic transparent layer can separate the aluminum substrate from the fluorescent glue layer, so that the aluminum substrate can be effectively prevented from being vulcanized, and the service life of the DOB light source can be prolonged.
Description
Technical Field
The utility model relates to a DOB light source technical field especially relates to a structure of DOB light source of high performance.
Background
The DOB light source integrates the LED light source and electronic components required by the constant current driving circuit on the same substrate, so that the DOB light source can be directly connected to commercial power, and the space is saved because the driving circuit does not need to be additionally arranged. The integration of the electronic components (especially the constant current driving chip) required by the constant current driving circuit and the LED light source on the same substrate is not beneficial to the heat dissipation of the electronic components required by the constant current driving circuit, so that the service life of the electronic components required by the constant current driving circuit is easily reduced, and the service life of the DOB light source is further shortened. Further, the surface of the mirror aluminum has a silver layer (e.g. of German An aluminum)
CoM), therefore can reflect the effect very well, phosphor powder in the fluorescent glue contains sulphur element mostly, and after the long-term use of DOB light source, the mirror surface aluminium area of the light that the reflection luminescence wafer sent can become black by sulphur element vulcanization, has then reduced the luminance of the light that the DOB light source sent, the performance of DOB light source reduces.
Accordingly, the prior art is deficient and needs improvement.
SUMMERY OF THE UTILITY MODEL
The to-be-solved technical problem of the utility model is: the structure of the high-performance DOB light source is provided, the heat dissipation effect of electronic components required by the constant current driving circuit is enhanced, and the mirror surface aluminum is prevented from being vulcanized.
The technical scheme of the utility model as follows: a structure for providing a high performance DOB light source comprising: the LED chip comprises an aluminum substrate, a constant current driving chip, a fluorescent glue layer, gold wires, a BT insulation layer, a light-emitting wafer, a heat conducting fin, a heat conducting glue layer, a circuit layer and a solder resist ink layer, wherein the BT insulation layer, the light-emitting wafer, the heat conducting fin and the heat conducting glue layer are respectively bonded on the aluminum substrate; the BT insulating layer is provided with a light emitting hole and a heat conducting hole, the light emitting wafer is arranged in the light emitting hole, the heat conducting sheet is arranged in the heat conducting hole, the constant current driving chip is arranged above the heat conducting hole, the heat conducting sheet is respectively connected with the aluminum substrate and the constant current driving electronic element through the heat conducting adhesive layer, the light emitting hole is sealed and covered by the fluorescent adhesive layer, the light emitting wafer is connected with the circuit layer through a gold thread, and the constant current driving chip is welded on the circuit layer. The heat conducting fins are arranged between the constant current driving chip and the aluminum substrate and can conduct heat generated when the constant current driving chip works to the aluminum substrate quickly, so that heat dissipation of the constant current driving chip is effectively enhanced, the service life of the constant current driving chip is prolonged, and the service life of the DOB light source is prolonged. The heat conduction glue layer can enhance the heat conduction efficiency between the constant current driving chip and the heat conducting fin and between the heat conducting fin and the aluminum substrate, and further enhance the heat dissipation of the constant current driving chip.
Further, the structure of the high-performance DOB light source further includes: and the organic transparent layer is arranged between the light-emitting wafer and the aluminum substrate and covers the area of the aluminum substrate in the light-emitting hole. The organic transparent layer can separate the fluorescent glue layer from the aluminum substrate layer, so that the aluminum substrate is prevented from being vulcanized, and the service life of the DOB light source can be prolonged.
Further, the organic transparent layer is transparent epoxy resin.
Further, the heat conducting fin is an aluminum nitride sheet, and the aluminum substrate is German ampere aluminum
CoM specular aluminum.
Furthermore, the circuit layer is provided with a plurality of bonding pads, the constant current driving chip is welded on the bonding pads, and the light-emitting wafer is connected with the bonding pads through gold wires. The solder mask ink layer covers a non-pad area of the circuit layer.
According to the above technical scheme, the utility model provides a structure of DOB light source of high performance sets up the conducting strip between constant current driver chip and aluminium base board, and the conducting strip can pass to aluminium base board with the heat that constant current driver chip produced to strengthen the heat dissipation of constant current driver chip, prolonged the required electronic components's of constant current drive life-span, prolonged the life-span of DOB light source then. The organic transparent layer can separate the aluminum substrate from the fluorescent glue layer, so that the aluminum substrate can be effectively prevented from being vulcanized, and the service life of the DOB light source can be prolonged.
Drawings
Fig. 1 is a schematic structural diagram of an embodiment of the present invention;
fig. 2 is a schematic structural diagram of another embodiment of the present invention.
Detailed Description
The present invention will be described in detail below with reference to the accompanying drawings and specific embodiments.
Example 1
Referring to fig. 1, the present invention provides a structure of a high performance DOB light source, including: the light emitting diode comprises an aluminum substrate 10, a constant current driving chip 20, a fluorescent glue layer 30, gold wires 40, a BT insulation layer 50, a light emitting wafer 51, a heat conducting sheet 52, a heat conducting glue layer 81, a circuit layer 60 and a solder mask ink layer 70, wherein the BT insulation layer 50, the light emitting wafer 51, the heat conducting sheet 52, the heat conducting glue layer 81, the circuit layer 60 and the solder mask ink layer 70 are respectively bonded on the aluminum; the BT insulating layer 50 is provided with a light emitting hole and a heat conducting hole, the light emitting wafer 51 is arranged in the light emitting hole, the heat conducting sheet 52 is arranged in the heat conducting hole, the heat conducting sheet 52 is respectively connected with the aluminum substrate 10 and the constant current driving electronic element through the heat conducting adhesive layer 81, the constant current driving chip 20 is arranged above the heat conducting hole, the light emitting hole is sealed and covered by the fluorescent adhesive layer 30, the light emitting wafer 51 is connected with the circuit layer 60 through the gold thread 40, and the constant current driving chip 20 is welded on the circuit layer 60. The heat conducting sheet 52 is arranged between the constant current driving chip 20 and the aluminum substrate 10, and the heat conducting sheet 52 can rapidly conduct heat generated when the constant current driving chip 20 works to the aluminum substrate 10, so that the heat dissipation of the constant current driving chip 20 is effectively enhanced, the service life of the constant current driving chip 20 is prolonged, and the service life of the DOB light source is prolonged. In this embodiment, the light emitting chip is fixed on the aluminum substrate by a heat conducting insulating adhesive. The thermal conductive adhesive layer 81 can enhance the heat conduction efficiency between the constant current driving chip 20 and the thermal conductive sheet 52 and between the thermal conductive sheet 52 and the aluminum substrate 10, thereby enhancing the heat dissipation of the constant current driving chip 20. The heat conducting glue adopts a happy brand 1101.
In this embodiment, the constant current driving chip 20 is an LED lamp constant current driving chip, such as: SM2082ED, CYT1000AE, SM 2315E.
The structure of the high-performance DOB light source further comprises: and the organic transparent layer 80 is arranged in the light emitting hole, the organic transparent layer 80 is arranged between the light emitting wafer 51 and the aluminum substrate 10, and the organic transparent layer 80 covers the area of the aluminum substrate 10 in the light emitting hole. The organic transparent layer 80 can separate the phosphor layer 30 from the aluminum substrate 10, thereby preventing the aluminum substrate 10 from being vulcanized, and further prolonging the service life of the DOB light source.
In this embodiment, the organic transparent layer 80 is a transparent epoxy resin. The type of the transparent epoxy resin is WSR-615. The BT insulating layer is a BT resin layer, and in the present embodiment, BT resin of mitsubishi gas corporation, japan is used.
In this embodiment, the heat conducting sheet 52 is an aluminum nitride sheet, and the aluminum substrate 10 is made of German aluminum
CoM specular aluminum.
In this embodiment, the circuit layer 60 is provided with a plurality of bonding pads, the constant current driver chip 20 is soldered on the bonding pads, and the light emitting chip 51 is connected to the bonding pads through gold wires 40. The solder resist ink layer 70 covers the non-solder pad area of the circuit layer 60.
Example 2
Referring to fig. 2, the present invention provides a structure of a high performance DOB light source, including: the light emitting diode comprises an aluminum substrate 10, a constant current driving chip 20, a fluorescent glue layer 30, gold wires 40, a BT insulation layer 50, a light emitting wafer 51, a heat conducting sheet 52, a heat conducting glue layer 81, a circuit layer 60 and a solder mask ink layer 70, wherein the BT insulation layer 50, the light emitting wafer 51, the heat conducting sheet 52, the heat conducting glue layer 81, the circuit layer 60 and the solder mask ink layer 70 are respectively bonded on the aluminum; the BT insulating layer 50 is provided with a light emitting hole and a heat conducting hole, the light emitting wafer 51 is arranged in the light emitting hole, the heat conducting sheet 52 is arranged in the heat conducting hole, the heat conducting sheet 52 is respectively connected with the aluminum substrate 10 and the constant current driving electronic element through the heat conducting adhesive layer 81, the constant current driving chip 20 is arranged above the heat conducting hole, the light emitting hole is sealed and covered by the fluorescent adhesive layer 30, the light emitting wafer 51 is connected with the circuit layer 60 through the gold thread 40, and the constant current driving chip 20 is welded on the circuit layer 60. The heat conducting sheet 52 is arranged between the constant current driving chip 20 and the aluminum substrate 10, and the heat conducting sheet 52 can rapidly conduct heat generated when the constant current driving chip 20 works to the aluminum substrate 10, so that the heat dissipation of the constant current driving chip 20 is effectively enhanced, the service life of the constant current driving chip 20 is prolonged, and the service life of the DOB light source is prolonged. In the present embodiment, the light emitting chip 51 is fixed on the aluminum substrate 10 by the thermal conductive insulating adhesive layer 55. The thermal conductive adhesive layer 81 can enhance the heat conduction efficiency between the constant current driving chip 20 and the thermal conductive sheet 52 and between the thermal conductive sheet 52 and the aluminum substrate 10, thereby enhancing the heat dissipation of the constant current driving chip 20. The heat conducting glue adopts a happy brand 1101.
In this embodiment, the constant current driving chip 20 is an LED lamp constant current driving chip, such as: SM2082ED, CYT1000AE, SM 2315E.
The BT insulating layer is a BT resin layer, and in the present embodiment, BT resin of mitsubishi gas corporation, japan is used.
In this embodiment, the heat conducting sheet 52 is an aluminum nitride sheet, and the aluminum substrate 10 is made of German aluminum
CoM specular aluminum.
In this embodiment, the circuit layer 60 is provided with a plurality of bonding pads, the constant current driver chip 20 is soldered on the bonding pads, and the light emitting chip 51 is connected to the bonding pads through gold wires 40. The solder resist ink layer 70 covers the non-solder pad area of the circuit layer 60.
To sum up, the utility model provides a structure of DOB light source of high performance sets up the conducting strip between constant current driver chip and aluminium base board, and the conducting strip can pass to aluminium base board with the heat that constant current driver chip produced to strengthen the heat dissipation of constant current driver chip, prolonged the required electronic components's of constant current drive life-span, prolonged the life-span of DOB light source then. The organic transparent layer can separate the aluminum substrate from the fluorescent glue layer, so that the aluminum substrate can be effectively prevented from being vulcanized, and the service life of the DOB light source can be prolonged.
The above description is only exemplary of the present invention and should not be construed as limiting the present invention, and any modifications, equivalents and improvements made within the spirit and principles of the present invention are intended to be included within the scope of the present invention.
Claims (4)
1. A high performance DOB light source construction comprising: the LED chip comprises an aluminum substrate, a constant current driving chip, a fluorescent glue layer, gold wires, a BT insulation layer, a light-emitting wafer, a heat conducting fin, a heat conducting glue layer, a circuit layer and a solder resist ink layer, wherein the BT insulation layer, the light-emitting wafer, the heat conducting fin and the heat conducting glue layer are respectively bonded on the aluminum substrate; the BT insulating layer is provided with a light emitting hole and a heat conducting hole, the light emitting wafer is arranged in the light emitting hole, the heat conducting sheet is arranged in the heat conducting hole, the constant-current driving chip is arranged above the heat conducting hole, the heat conducting sheet is respectively connected with the aluminum substrate and the constant-current driving chip through the heat conducting adhesive layer, the light emitting hole is sealed and covered by the fluorescent adhesive layer, the light emitting wafer is connected with the circuit layer through a gold thread, and the constant-current driving chip is welded on the circuit layer.
2. A high performance DOB light source construction as recited in claim 1, further comprising: and the organic transparent layer is arranged between the light-emitting wafer and the aluminum substrate and covers the area of the aluminum substrate in the light-emitting hole.
3. A high performance DOB light source construction as claimed in claim 2, wherein said organic transparent layer is a transparent epoxy.
4. The structure of a high performance DOB light source as claimed in claim 1, wherein the heat conducting sheet is an aluminum nitride sheet, and the aluminum substrate is MIRO-
CoM specular aluminum.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921312113.XU CN210040199U (en) | 2019-08-13 | 2019-08-13 | Structure of high-performance DOB light source |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921312113.XU CN210040199U (en) | 2019-08-13 | 2019-08-13 | Structure of high-performance DOB light source |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN210040199U true CN210040199U (en) | 2020-02-07 |
Family
ID=69350901
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201921312113.XU Active CN210040199U (en) | 2019-08-13 | 2019-08-13 | Structure of high-performance DOB light source |
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| Country | Link |
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| CN (1) | CN210040199U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022236880A1 (en) * | 2021-05-10 | 2022-11-17 | 幂光新材料科技（上海）有限公司 | Manufacturing method for high-light efficiency led lamp |
-
2019
- 2019-08-13 CN CN201921312113.XU patent/CN210040199U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022236880A1 (en) * | 2021-05-10 | 2022-11-17 | 幂光新材料科技（上海）有限公司 | Manufacturing method for high-light efficiency led lamp |
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Address after: Room 304, 307, and 309, 3rd floor, Chuangyan Street, Zhongxin Knowledge City Science and Information Industry Park, Huangpu District, Guangzhou City, Guangdong Province, 510700 (self designated Building 3) (R&D office) Patentee after: Guangdong Ipas New Materials Technology Co.,Ltd. Country or region after: China Address before: 518000 Guangming New District, Shenzhen City, Guangdong Province, Heshuikou Community, Gongming Street, Area A, 3rd floor, Xinghuang Science Park, 7th Industrial Zone Patentee before: Shenzhen Ipas New Materials Technology Co.,Ltd. Country or region before: China |
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