CN210037991U - Detection device for metal surface electric field noise - Google Patents
Detection device for metal surface electric field noise Download PDFInfo
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- CN210037991U CN210037991U CN201920382580.3U CN201920382580U CN210037991U CN 210037991 U CN210037991 U CN 210037991U CN 201920382580 U CN201920382580 U CN 201920382580U CN 210037991 U CN210037991 U CN 210037991U
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- 230000005684 electric field Effects 0.000 title claims abstract description 27
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 26
- 239000002184 metal Substances 0.000 title claims abstract description 26
- 238000001514 detection method Methods 0.000 title claims abstract description 11
- 238000005040 ion trap Methods 0.000 claims abstract description 28
- 238000012634 optical imaging Methods 0.000 claims abstract description 12
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000011575 calcium Substances 0.000 claims abstract description 10
- 229910052791 calcium Inorganic materials 0.000 claims abstract description 8
- 108010083687 Ion Pumps Proteins 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 abstract description 5
- 230000000694 effects Effects 0.000 abstract description 2
- 239000000463 material Substances 0.000 abstract description 2
- 230000002547 anomalous effect Effects 0.000 abstract 1
- 238000001228 spectrum Methods 0.000 abstract 1
- 238000001816 cooling Methods 0.000 description 24
- BHPQYMZQTOCNFJ-UHFFFAOYSA-N Calcium cation Chemical compound [Ca+2] BHPQYMZQTOCNFJ-UHFFFAOYSA-N 0.000 description 16
- 229910001424 calcium ion Inorganic materials 0.000 description 16
- 150000002500 ions Chemical class 0.000 description 15
- 230000003595 spectral effect Effects 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 230000007704 transition Effects 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 230000005283 ground state Effects 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 238000000004 low energy electron diffraction Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000021715 photosynthesis, light harvesting Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
Abstract
The utility model discloses a detection apparatus for metal surface electric field noise, including the vacuum cavity, still including setting up the chip support frame in the vacuum cavity, be provided with calcium atomic furnace and filter circuit board on the chip support frame, filter circuit board's chip is placed downthehole being provided with the ion trap chip, and ion trap chip top is provided with the sample rack, is provided with photomultiplier and optical imaging mirror on the vacuum cavity, still is provided with logical light window on the vacuum cavity. The utility model discloses utilize anomalous heating effect of ion to carry out the detection of metal surface electric field noise, compare general surperficial measuring instrument noise spectrum density precision and be high to 10‑10V2/m2Hz, and is suitable for detecting the metal electric field noise on the surface of the material needing ultrahigh smoothness.
Description
Technical Field
The utility model relates to a metal surface electric field noise detects technical field, concretely relates to detection device of metal surface electric field noise is applicable to the detection of metal surface electric field noise.
Background
The electric field noise and energy dissipation of metal surface are the problems facing many scientific and technical fields at present, such as low-frequency noise in nanoelectronics and superconducting electronics, but no detection device capable of detecting noise with spectral density lower than 10 is available at present-10V2/m2Hz electric field noise.
Ions trapped in the ion trap are very sensitive to electric field noise generated by the metal surface, which causes the motion of the ions to heat up. Ions trapped in a vacuum environment cannot be interfered by an external environment, so that the vibration quantum state and electron spin of the ions can be accurately controlled through laser, the ion heating rate can be accurately measured, and the measurement of the electric field noise on the surface of the metal can be realized.
SUMMERY OF THE UTILITY MODEL
To the above-mentioned problem that exists among the present prior art, the utility model provides a detection device of metal surface electric field noise. The sensitivity of the spectral density of the detected electric field noise can reach 10-10V2/m2Hz, and solves the problems that the current universal measuring instruments (Auger low-energy electron diffraction spectrometers and the like) have insufficient sensitivity, low precision, and can not measure the electric field noise on the surface of the metal.
The above object of the utility model is realized through following technical scheme:
the detection device for the metal surface electric field noise comprises a vacuum cavity and further comprises a chip support frame arranged in the vacuum cavity, a calcium atomic furnace and a filter circuit board are arranged on the chip support frame, an ion trap chip is arranged in a chip placing hole of the filter circuit board, a sample placing frame is arranged above the ion trap chip, a photomultiplier and an optical imaging mirror are arranged on the vacuum cavity, and a light passing window is further arranged on the vacuum cavity.
The chip support frame is also provided with a three-dimensional nano moving platform for driving the sample placing frame to move in three dimensions.
The ion trap chip comprises the direct current electrode and the radio frequency electrode, the filter circuit board is provided with the filter circuit and the radio frequency lead, the direct current electrode is connected with the pin corresponding to the direct current feed-through arranged on the vacuum cavity through the corresponding filter circuit, and the radio frequency electrode is connected with the pin corresponding to the radio frequency feed-through the corresponding radio frequency lead.
The first CF35 interface, the second CF35 interface, the third CF35 interface, the fourth CF35 interface, the fifth CF35 interface, the sixth CF35 interface, the seventh CF35 interface and the eighth CF35 interface are uniformly arranged in the circumferential direction of the vacuum cavity, the first CF100 interface and the second CF100 interface are respectively arranged at the bottom and the top of the vacuum cavity,
an optical imaging mirror and a photomultiplier are arranged on the first CF35 interface, a radio frequency feed-through is arranged on the second CF35 interface, a direct current feed-through is arranged on the first CF100 interface, light-transmitting windows are arranged on the second CF100 interface, the third CF35 interface, the fourth CF35 interface, the fifth CF35 interface, the seventh CF35 interface and the eighth CF35 interface, and the sixth CF35 interface is respectively connected with an ion pump and a vacuum angle valve through a three-way vacuum connector.
Compared with the prior art, the utility model, following beneficial effect has:
the abnormal heating effect of the ions is utilized to detect the electric field noise on the surface of the metal, and compared with a general surface measuring instrument (an Auger low-energy electron diffraction spectrometer and the like), the device detects the noise with the spectral density precision as high as 10-10V2/m2Hz, and is suitable for detecting the metal electric field noise on the surface of the material needing ultrahigh smoothness.
Drawings
Fig. 1 is a schematic view of the overall structure of the present invention;
FIG. 2 is a schematic view of the overall structure of an ion trap chip and a three-dimensional nano-mobile stage;
FIG. 3a is a schematic diagram of the top view structure of the vacuum chamber, the optical imaging lens 11 and the photomultiplier tube 10;
FIG. 3b is a front view of the vacuum chamber, the optical imaging lens 11 and the photomultiplier tube 10;
FIG. 4a is a schematic structural diagram of a filter circuit board;
FIG. 4b is a schematic plan view of an ion trap chip;
FIG. 5 is a schematic diagram of relative positions of an ion trap chip and a sample to be measured;
in the figure: 1-first CF35 interface; 2-second CF35 interface; 3-third CF35 interface; 4-fourth CF35 interface; 5-fifth CF35 interface; 6-sixth CF35 interface; 7-seventh CF35 interface; 8-eighth CF35 interface; 9-radio frequency feed-through; 10-a photomultiplier tube; 11-an optical imaging mirror; 12-a vacuum chamber; 13-vacuum angle valve; 14-an ion pump; 15-calcium atomic furnace; 16-a three-dimensional nano mobile station; 17-a chip support; 18-a direct current feed-through; 19-a filter circuit board; 20-an ion trap chip; 21-sample placement rack; 22-square plate; 23-a step electrode; 24-a sample to be tested; 25-imprisoned40Ca+Ions.
Detailed Description
To facilitate understanding and practice of the invention by those of ordinary skill in the art, the following detailed description of the invention is provided in connection with the examples, and it is to be understood that the examples described herein are for purposes of illustration and explanation only and are not intended to limit the invention.
Example 1:
the detection device for the metal surface electric field noise comprises a vacuum cavity 12 and further comprises a chip support frame 17 arranged in the vacuum cavity 12, a calcium atomic furnace 15 and a filter circuit board 19 are arranged on the chip support frame 17, an ion trap chip 20 is arranged in a chip placing hole of the filter circuit board 19, a sample placing frame 21 is arranged above the ion trap chip 20, a photomultiplier tube 10 and an optical imaging mirror 11 are arranged on the vacuum cavity 12, and a light passing window is further arranged on the vacuum cavity 12.
As shown in fig. 2 and 5. A sample 24 to be detected is fixed above the ion trap chip 20, the sample 24 to be detected is fixed on a sample placing frame 21, the sample placing frame 21 is fixed with the three-dimensional nanometer moving platform 16 through a right-angle plate 22, and the sample placing frame 21 is driven by the three-dimensional nanometer moving platform 16 to move in the three-dimensional direction. The three-dimensional nano-moving stage 16 is disposed on a chip support frame 17.
The ion trap chip 20 comprises a single-layer silicon dioxide surface and a gold electrode on the silicon dioxide surface, and further comprises 15 direct current electrodes and 2 radio frequency electrodes. The ion trap chip 20 may be an existing ion trap chip, and the ion trap chip 20 is fixed in a chip placement hole on the filter circuit board 19. The filter circuit board 19 is provided with a first-order passive RC filter circuit and a radio frequency wire. The direct current electrodes are respectively connected with pins corresponding to the direct current feed-through 18 through corresponding first-order passive RC filter circuits, and the radio frequency electrodes are respectively connected with pins corresponding to the radio frequency feed-through 9 through corresponding radio frequency leads. The sample holder 21 was 11.5mm by 9 mm. The three-dimensional nanometer mobile station 16 is assembled by three one-dimensional nanometer mobile stations, and the three-dimensional nanometer mobile station 16 is fixed on the chip support frame 17. Each one-dimensional nano platform is driven in two directions of a straight line through two stepping electrodes 23 and used for accurately controlling the stepping (40nm) of the nano platform, and the stroke is 5 mm; the drive lines of a total of 6 step electrodes 23 are each connected to a respective pin of the dc feed-through 18. The filter circuit board 19 and the calcium atomic furnace 15 are fixed on a chip support frame 17, and the chip support frame 17 is fixed on a stainless steel vacuum flange plate.
As shown in fig. 3 a. The vacuum chamber 12 maintains the degree of vacuum in the vacuum chamber 12 at 1.0X 10 by the ion pump 14-8Pa or so. The vacuum cavity 12 is of a 10-face body structure, 8 CF35 interfaces are sequentially and uniformly distributed on the vacuum cavity 12 along the circumference of the side surface, and the 8 CF35 interfaces are respectively a first CF35 interface 1, a second CF35 interface 2, a third CF35 interface 3, a fourth CF35 interface 4, a fifth CF35 interface 5, a sixth CF35 interface 6, a seventh CF35 interface 7 and an eighth CF35 interface 8; the lower and upper top surfaces of the vacuum chamber 12 are provided with a first CF100 port and a second CF100 port, respectively.
The first CF35 interface 1 is provided with an optical imaging mirror 11 and a photomultiplier tube 10 and is used for detecting the transition fluorescence of the trapped ions; the second CF35 interface 2 is provided with a radio frequency feed-through 9 for connecting with a radio frequency electrode on the ion trap chip 20; the third CF35 interface 3, the fourth CF35 interface 4, the fifth CF35 interface 5, the seventh CF35 interface 7 and the eighth CF35 interface 8 are provided with light-passing windows.
The light-transmitting window of the third CF35 interface 3 is used for transmitting the 397nm cooling laser and the 729nm cooling laser in the horizontal direction, and is also used for transmitting the 423nm photoionization laser and the 375nm photoionization laser in the horizontal direction to the upper part of the surface of the ion trap chip 20; a light-transmitting window of the seventh CF35 interface 7 is used for transmitting 854nm cooling laser and 866nm cooling laser which form an included angle of 3.8 degrees with the horizontal direction; the sixth CF35 port 6 is connected to the ion pump 14 and the vacuum angle valve 13 via a three-way vacuum connector, respectively. The first CF100 interface mounts 25-core dc feed-through 18 for connecting the step electrode 23 to the first-order passive RC filter circuit on the filter circuit board 19, and the second CF100 interface 2 mounts the clear window.
As shown in fig. 3a and 3b, the calcium atomic furnace 15 is electrically heated to diffuse calcium atoms to the surface of the ion trap chip 20.
423nm photoionization laser and 375nm photoionization laser in the horizontal direction are incident to the upper part of the surface of the ion trap chip 20 from a light-passing window of the third CF35 interface 3, and monovalent calcium ions are generated under the interaction of the 423nm photoionization laser and the 375nm photoionization laser and calcium atoms.
And (3) electrifying the direct current electrode and the radio frequency electrode on the ion trap chip 20 to generate a trapping field, trapping univalent calcium ions generated in the step (2) in the trapping field, and closing 423nm photoionization laser and 375nm photoionization laser in the horizontal direction, which are incident through a light passing window of the third CF35 interface 3. Opening 397nm cooling laser in the horizontal direction incident through a light-transmitting window of a third CF35 interface 3, opening 866nm cooling laser and 854m cooling laser which form an angle of 3.8 degrees with the horizontal direction and are incident through a light-transmitting window of a seventh CF35 interface 7, and enabling univalent calcium ions in the imprisoning field to be Doppler cooled to 500 muK; and then, 397nm cooling laser in the horizontal direction incident through a light-passing window of the third CF35 interface 3 is closed, 729nm cooling laser in the horizontal direction incident through a light-passing window of the third CF35 interface 3 is opened, and meanwhile, the power of 854nm cooling laser which is incident through a light-passing window of the seventh CF35 interface 7 and forms an angle of 3.8 degrees with the horizontal direction is slowly weakened, so that the univalent calcium ion sideband in the prisoner's confinement field is cooled to 50 mu K, and the external vibration mode of the univalent calcium ion is in the motion ground state.
The horizontal 729nm cooling laser beam incident through the light-transmitting window of the third CF35 interface 3 is turned off, the 854nm cooling laser beam which has an angle of 3.8 degrees with the horizontal direction and is incident through the light-transmitting window of the seventh CF35 interface 7 is turned off, after a period of time, the horizontal 397nm cooling laser beam which is incident through the light-transmitting window of the third CF35 interface 3 is turned on, the frequency of the horizontal 729nm cooling laser beam which passes through the light-transmitting window of the third CF35 interface 3 is turned on and scanned, and the sideband signal in the monovalent calcium ion sideband transition process is detected through the optical imaging mirror 11 and the photomultiplier 10.
As shown in FIG. 5, imprisoned40Ca+Ions and a sample 24 to be measured fixed on the lower end face of the sample placing frame 21.
Example 2
The method for detecting metal surface electric field noise using the device for detecting metal surface electric field noise described in embodiment 1 includes the steps of:
And 3, electrifying the direct current electrode and the radio frequency electrode on the ion trap chip 20 to generate a trapping field, and trapping the univalent calcium ions generated in the step 2 in the trapping field. The 423nm photoionization laser and the 375nm photoionization laser in the horizontal direction incident through the light transmission window of the third CF35 interface 3 are turned off.
and then, 397nm cooling laser in the horizontal direction incident through a light-passing window of the third CF35 interface 3 is closed, 729nm cooling laser in the horizontal direction incident through a light-passing window of the third CF35 interface 3 is opened, and meanwhile, the power of 854nm cooling laser which is incident through a light-passing window of the seventh CF35 interface 7 and forms an angle of 3.8 degrees with the horizontal direction is slowly weakened, so that the univalent calcium ion sideband in the prisoner confinement field is cooled to 50 mu K, and at the moment, the external vibration mode of the univalent calcium ion is in the motion ground state.
And 5, closing 729nm cooling laser in the horizontal direction incident through a light-passing window of a third CF35 interface 3, closing 854nm cooling laser which is incident through a light-passing window of a seventh CF35 interface 7 and forms an angle of 3.8 degrees with the horizontal direction, waiting for a period of time, turning on 397nm cooling laser in the horizontal direction incident through the light-passing window of the third CF35 interface 3, turning on and scanning the frequency of the 729nm cooling laser in the horizontal direction through the light-passing window of the third CF35 interface 3, and detecting sideband signals in the sideband transition process of monovalent calcium ions through an optical imaging mirror 11 and a photomultiplier 10 which are connected with a first CF35 interface 1.
And 6, repeating the steps 4-5 for multiple times to obtain multiple groups of sideband signals in the monovalent calcium ion sideband transition process, and further obtain blue (P) in the monovalent calcium ion sideband transition processbsb) Sideband and red (P)rsb) The transition probability ratio of the sideband can obtain the phonon number n (P) of the ionrsb/(Pbsb-Prsb) And then measuring the change of the phonon number of the ions along with the time so as to know the heating rate of the monovalent calcium ions and further determine the noise spectral density detected by the monovalent calcium ions at the position.
And 7, controlling the sample to be detected on the three-dimensional nanometer moving platform to move by a small distance in a stepping mode to change the relative position between the sample to be detected and the imprisoned ions, repeating the steps 4-6, recording the relative position between the sample to be detected and the imprisoned ions and the corresponding noise spectral density until the imprisoned ions traverse the region to be detected covering the sample to be detected.
And 8, fitting the metal surface electric field noise distribution of the sample to be detected according to the relative position between each sample to be detected and the imprisoned ions and the corresponding noise spectral density.
Sample to be detected by using trapping ions in the stepThe noise spectral density of the metal surface electric field noise of the product can be accurate to 10-10V2/m2Hz. The method is suitable for equipment or scenes requiring extremely high metal surface smoothness.
The specific embodiments described herein are merely illustrative of the spirit of the invention. Various modifications, additions and substitutions for the specific embodiments described herein may be made by those skilled in the art without departing from the spirit of the invention or exceeding the scope of the invention as defined in the accompanying claims.
Claims (4)
1. The detection device for the metal surface electric field noise comprises a vacuum cavity (12) and is characterized by further comprising a chip support frame (17) arranged in the vacuum cavity (12), a calcium atomic furnace (15) and a filter circuit board (19) are arranged on the chip support frame (17), an ion trap chip (20) is arranged in a chip placing hole of the filter circuit board (19), a sample placing frame (21) is arranged above the ion trap chip (20), a photomultiplier (10) and an optical imaging mirror (11) are arranged on the vacuum cavity (12), and a light passing window is further arranged on the vacuum cavity (12).
2. The device for detecting the electric field noise on the metal surface according to claim 1, wherein a three-dimensional nano moving table (16) for driving the sample placing frame (21) to move in three dimensions is further disposed on the chip supporting frame (17).
3. The device for detecting the electric field noise on the metal surface according to claim 2, wherein the ion trap chip (20) comprises a DC electrode and a radio frequency electrode, the filter circuit board (19) is provided with a filter circuit and a radio frequency lead, the DC electrode is connected with a corresponding pin of a DC feed-through (18) arranged on the vacuum chamber (12) through a corresponding filter circuit, and the radio frequency electrode is connected with a corresponding pin of a radio frequency feed-through (9) through a corresponding radio frequency lead.
4. The device for detecting the electric field noise on the metal surface according to claim 3, wherein a first CF35 interface (1), a second CF35 interface (2), a third CF35 interface (3), a fourth CF35 interface (4), a fifth CF35 interface (5), a sixth CF35 interface (6), a seventh CF35 interface (7) and an eighth CF35 interface (8) are uniformly arranged in the circumferential direction of the vacuum chamber (12), a first CF100 interface and a second CF100 interface are respectively arranged at the bottom and the top of the vacuum chamber (12),
an optical imaging mirror (11) and a photomultiplier (10) are arranged on a first CF35 interface (1), a radio frequency feed-through (9) is arranged on a second CF35 interface (2), a direct current feed-through (18) is arranged on a first CF100 interface, light-passing windows are arranged on a second CF100 interface, a third CF35 interface (3), a fourth CF35 interface (4), a fifth CF35 interface (5), a seventh CF35 interface (7) and an eighth CF35 interface (8), and a sixth CF35 interface (6) is respectively connected with an ion pump (14) and a vacuum angle valve (13) through a three-way vacuum connector.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201920382580.3U CN210037991U (en) | 2019-03-25 | 2019-03-25 | Detection device for metal surface electric field noise |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201920382580.3U CN210037991U (en) | 2019-03-25 | 2019-03-25 | Detection device for metal surface electric field noise |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109884415A (en) * | 2019-03-25 | 2019-06-14 | 中国科学院武汉物理与数学研究所 | The detection device and method of metal surface electric field noise |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109884415A (en) * | 2019-03-25 | 2019-06-14 | 中国科学院武汉物理与数学研究所 | The detection device and method of metal surface electric field noise |
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Effective date of registration: 20240402 Address after: 430071 Xiao Hong, Wuchang District, Wuhan District, Hubei, Shanxi, 30 Patentee after: Institute of precision measurement science and technology innovation, Chinese Academy of Sciences Country or region after: China Address before: 430071 Xiao Hong, Wuchang District, Wuhan District, Hubei, Shanxi, 30 Patentee before: WUHAN INSTITUTE OF PHYSICS AND MATHEMATICS, CHINESE ACADEMY OF SCIENCES Country or region before: China |