CN210006724U

CN210006724U - lead frame for microchip

Info

Publication number: CN210006724U
Application number: CN201920609270.0U
Authority: CN
Inventors: 廖邦雄; 杨建斌; 丁银光
Original assignee: Boluo Jiexin Plastic Hardware Products Co Ltd
Current assignee: Boluo Jiexin Plastic Hardware Products Co Ltd
Priority date: 2019-04-29
Filing date: 2019-04-29
Publication date: 2020-01-31
Anticipated expiration: 2029-04-29

Abstract

The utility model relates to an LEAD frame for microchip, the LEAD frame includes the frame body that a plurality of set up side by side, the frame body includes PAD district and LEAD TIP district, the plane that PAD district was located with the plane that LEAD TIP district was located is parallel, and has the difference in height, makes PAD district forms the indent structure, the difference in height between PAD district and the LEAD TIP district is 0.170 +/-0.025 mm, LEAD TIP district thickness is 0.127 +/-0.008 mm, still including setting up two TIBAR districts on PAD district both sides on every frame body, PAD district with there is transition slope between the TIBAR district, the face of frame body is the rough surface, and the face is smooth processing face in addition, the rough surface of frame body is sunken to the processing face and is concave deep plastic envelope, transition slope with the a between the plane that PAD district is located is 20-40, to the pin of LEAD TIP district carries out the finish welding processing ability, the novel heat dissipation volume when having solved the heat dissipation reinforce problem.

Description

lead frame for microchip

Technical Field

The utility model relates to the technical field of integrated circuit, especially, relate to kinds of lead frames that are used for microchip.

Background

The lead frame is used as a chip carrier of an integrated circuit, key structural members for forming an electric circuit by realizing the electrical connection between a lead-out end of an internal circuit of the chip and an external lead by means of bonding materials (gold wires, aluminum wires and copper wires), play a role of a bridge connected with an external lead, need to use the lead frame in most semiconductor integrated blocks and are important basic materials in the electronic information industry.

The PAD is used as a base island and a carrier, the LEAD TIP is the top end of a leg, the TIBAR is a seat column used for supporting the base island, TRIMMING is a rib cutting process after packaging, BENT LEAD is a bending process after packaging, MOLDING is plastic packaging and packaging, W/B is pressure welding, the PAD area and the LEAD TIP area of a LEAD frame in the prior art are located on the same plane and are difficult to radiate heat and easy to burn out, when a small-sized electrical appliance uses a power supply power chip, the LEAD frame is limited by the volume of the whole machine, a circuit of the LEAD frame must reach a frame with a small-sized appearance design, and the problem of arc height exists in a special product needing cross pressure welding.

SUMMERY OF THE UTILITY MODEL

The to-be-solved technical problem of the utility model is to provide kinds of heat-sinking capability reinforce, and be difficult for receiving the lead frame that is used for microchip of organism volume restriction.

In order to achieve the above object, the present invention provides LEAD frames for microchips, the LEAD frames include a plurality of side-by-side frame bodies, the frame bodies include a PAD area and a LEAD TIP area, the plane of the PAD area is parallel to the plane of the LEAD TIP area, and there is a height difference, so that the PAD area forms an indent structure, the height difference between the PAD area and the LEAD TIP area is 0.170 ± 0.025mm, the thickness of the LEAD TIP area is 0.127 ± 0.008mm, each frame body further includes two TIBAR areas disposed at both sides of the PAD area, the TIBAR is a seat pillar for supporting the PAD area, there is a transition slope between the PAD area and the TIBAR area, buffer zones are provided when pressure welding is performed, products are prevented from being damaged, an included angle a ° between the transition slope and the plane of the PAD area is 30 in the LEAD frame of the microchip, the PAD capacity of the LEAD frame is optimal, the PAD area is high, and the problem of high yield is solved.

As improvements of the utility model, the surface of the frame body is a rough surface, in addition, the surface is a smooth processing surface, the rough surface of the frame body is concave towards the processing surface and is subjected to concave-deep plastic package, and the frame body is easy to fix after the plastic package, can prevent dust, can insulate and is convenient to install, use and store.

As the utility model discloses an improvements, PAD district width is 4.35 ± 0.102mm, and this PAD district thickness is more suitable for the lead frame that is used for microchip.

As the utility model discloses an kinds of improvements, it is right the pin in LEAD TIP district carries out the coining processing for the pin is more level and smooth, and contact electric conductive property is stronger.

In summary, the present invention provides a method for manufacturing a semiconductor package, which comprises forming a PAD region on a LEAD frame for a microchip, wherein the PAD region is parallel to a LEAD TIP region, and has a height difference, wherein the PAD region is formed in an inwardly concave structure, the height difference between the PAD region and the LEAD TIP region is 0.170 ± 0.025mm, the LEAD TIP region has a thickness of 0.127 ± 0.008mm, and the height difference exposes the PAD region, thereby improving the heat dissipation capability of the LEAD frame, wherein the height difference between the PAD region and the LEAD TIP region is 0.170 ± 0.025mm, the LEAD TIP region has a thickness of 0.127 ± 0.008mm, and the height difference and the thickness are small, thereby making the LEAD frame thinner and difficult to be limited by the volume of the package, wherein each package further comprises two TIBAR regions disposed on both sides of the PAD region, the TIBAR regions are pillars for supporting the PAD region, the PAD region and TIBAR regions are disposed between the PAD region and TIBAR regions, thereby providing a transition between the PAD region and the PAD region when bonding, providing a high yield for the bonding of a high bonding PAD region, the chip, the package is suitable for a high bonding PAD region, the chip, the package substrate is a high-press-bonding-resistant LEAD frame, the package-mounted chip, the package-mounted package-chip, the package-mounted package.

Drawings

FIG. 1 is a schematic view of a prior art lead frame matte structure;

FIG. 2 is a schematic diagram of lead frames for microchips according to the present invention;

FIG. 3 is a schematic view of the rough surface structure of the present invention;

FIG. 4 is a schematic view of a single frame structure according to the present invention;

in the drawings are labeled: 1. frame body, 2, PAD district, 3, LEAD TIP district, 4, TIBAR district, 5, transition slope, 6, rough surface, 101, difference in height, 102, LEAD TIP district thickness, 103, PAD district width, 104, LEAD TIP pin, 1000, LEAD frame.

Detailed Description

The following steps are provided to explain embodiments of the present invention in conjunction with the drawings, and it should be noted that the following description of the embodiments is provided to facilitate understanding of the present invention, but not to limit the present invention.

In the utility model, PAD is a base island and a carrier; LEAD TIP is the top of the young foot; the TIBAR is a seat post and is used for supporting the base island; TRIMMING is a TRIMMING process after packaging; BENT LEAD is a bending process after packaging; MOLDING is plastic packaging and packaging; W/B is pressure welding.

Fig. 1-4 show kinds of LEAD frame 1000 for microchip, it includes the frame body 1 that a plurality of set up side by side, frame body 1 includes PAD district 2 and LEAD TIP district 3, the plane that PAD district 2 located is parallel with the plane that LEAD TIP district 3 located, and there is difference in height 101, makes PAD district 2 form the indent structure, and difference in height 101 between PAD district 2 and LEAD TIP district 3 is 0.170 ± 0.025mm, and LEAD TIP district thickness 102 is 0.127 ± 0.008 mm.

As the utility model discloses a preferred scheme, still including setting up two TIBAR districts 4 on PAD district 2 both sides on every framework 1, TIBAR is the seat post for support PAD district 2.

As the preferred scheme of the utility model, there is transition slope 5 between PAD district 2 and TIBAR district 4, provides buffer zones when carrying out the pressure welding, prevents to damage the product.

As the utility model discloses an optimal scheme, contained angle a between the plane that transition slope 5 and PAD district 2 were located is 30, in microchip's lead frame 1000, its loss prevention ability is best, and the yield is high to the arc height problem when pressure welding has been solved.

As the preferred scheme of the utility model, the face of the frame body 1 is rough face 6, the face is smooth processing face, the rough face 6 of the frame body 1 is concave towards the processing face and is subjected to concave-deep plastic package, and the frame body is easy to fix after the plastic package, can prevent dust, can insulate, and is convenient to install, use and store.

As a preferred embodiment of the present invention, the PAD area width 103 is 4.35 ± 0.102mm, and the PAD area width 103 is more suitable for the lead frame 1000 for the microchip.

As the utility model discloses an optimal scheme carries out the coining processing to the pin 104 in LEAD TIP district for the pin is more level and smooth, and contact electric conductive property is stronger.

In summary, the present invention provides a LEAD frame 1000 for micro chips, wherein a PAD area 2 is parallel to a LEAD TIP area 3, and a height difference 101 exists, so that the PAD area 2 forms an inwardly concave structure, the height difference 101 between the PAD area 2 and the LEAD TIP area 3 is 0.170 ± 0.025mm, a LEAD TIP area thickness 102 is 0.127 ± 0.008mm, the height difference 101 exposes the PAD area 2, thereby improving heat dissipation capability of the LEAD frame 1000, the height difference 101 between the PAD area 2 and the LEAD TIP area 3 is 0.170 ± 0.025mm, the LEAD TIP area thickness 102 is 0.127 ± 0.008mm, the height difference 101 and thickness are small, so that the LEAD frame 1000 is lighter and thinner and difficult to be limited by a body volume, each frame 1 further includes two tie regions 4 disposed on both sides of the PAD area 2, the tie regions are posts for supporting the PAD area 2, the tie regions 2 and the tie regions are not easily to be limited by the body volume, each frame 1 further includes two tie regions 4 disposed on both sides of the PAD area 2, the tie regions are easy to be damaged by a high-20, the PAD area, the high-20-flat surface of the LEAD frame is easy to be used for the chip, the high-flat surface of the LEAD frame is easy-mounting, the high-press-flat-press-flat-press-.

The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims

1, LEAD frames for microchips, wherein the LEAD frames comprise a plurality of frame bodies arranged side by side, each frame body comprises a PAD area and a LEAD TIP area, the plane of the PAD area is parallel to the plane of the LEAD TIP area, and has a height difference, so that the PAD area forms a concave structure, the height difference between the PAD area and the LEAD TIP area is 0.170 +/-0.025 mm, the thickness of the LEAD TIP area is 0.127 +/-0.008 mm, each frame body further comprises two TIBAR areas arranged at two sides of the PAD area, a transition slope exists between the PAD area and the TIBAR area, and an included angle a between the transition slope and the plane of the PAD area is 30 degrees.

2. The kinds of lead frames for microchips according to claim 1, wherein the face of the frame body is a rough face, the other face is a smooth processed face, and the rough face of the frame body is recessed and subjected to deep molding.

3. The leadframe for microchips according to claim 1, wherein said PAD area has a width of 4.35 ± 0.102 mm.

4. The LEAD frame for a microchip according to claim 1, wherein the LEADs of the LEAD TIP region are coined.