CN209992835U - Power amplifier drain electrode fast on-off control circuit - Google Patents
Power amplifier drain electrode fast on-off control circuit Download PDFInfo
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- CN209992835U CN209992835U CN201920769974.4U CN201920769974U CN209992835U CN 209992835 U CN209992835 U CN 209992835U CN 201920769974 U CN201920769974 U CN 201920769974U CN 209992835 U CN209992835 U CN 209992835U
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Abstract
The utility model discloses a quick break-make electric control circuit of power amplifier drain electrode, including triode Q1, triode Q2, triode Q3 and MOS pipe Q4, triode Q1's b utmost point is connected in resistance R4, and resistance R4 is connected in the TTL level, triode Q1's c utmost point is connected in resistance R1, and resistance R1 is connected in triode Q2's c utmost point and MOS pipe Q4's D utmost point respectively, triode Q1's e utmost point ground connection; the b electrodes of the triode Q2 and the triode Q3 are connected to the series resistors R2 and R3, and the series resistors R2 and R3 are connected to the c electrode circuit of the triode Q1. According to the power amplifier drain electrode rapid power-on and power-off control circuit, two NPN triodes, one PNP triode and a P MOS tube are adopted to realize that the switching level is the TTL level, so that the power-on time of the power amplifier drain electrode is ns level in a switching system, and the rapid power-on and power-off of the power amplifier drain electrode can be accurately controlled.
Description
Technical Field
The utility model relates to a communication control circuit technical field specifically is a quick break-make control circuit of power amplifier drain electrode.
Background
In order to adapt to the rapid switching of receiving and transmitting in communication products, the power on-off time of a power amplifier in a transmitting link is critical, and in a rapid switching system, the power on time of a drain electrode of the power amplifier is required to be ns level, so that the control on the rapid power on-off of a drain electrode of the power amplifier is particularly important.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide a quick break-make electric control circuit of power amplifier drain electrode adopts the triode of two NPN types, the triode of a PNP type and the MOS pipe of P type to realize switching the level and be the TTL level to in switched systems, it is ns level to reach power amplifier drain electrode power-on time, therefore but the problem among the prior art has been solved to the quick break-make electricity of power amplifier drain electrode to the accurate control.
In order to achieve the above object, the utility model provides a following technical scheme: a power amplifier drain electrode fast on-off control circuit comprises a triode Q1, a triode Q2, a triode Q3 and an MOS tube Q4, wherein the b pole of the triode Q1 is connected with a resistor R4, a resistor R4 is connected with a TTL level, the c pole of the triode Q1 is connected with the resistor R1, a resistor R1 is respectively connected with the c pole of the triode Q2 and the D pole of the MOS tube Q4, and the e pole of the triode Q1 is grounded; the b electrodes of the triode Q2 and the triode Q3 are connected to series resistors R2 and R3, the series resistors R2 and R3 are connected to a circuit of the c electrode of the triode Q1, the e electrode of the triode Q2 and the e electrode of the triode Q3 are connected, and the c electrode of the triode Q3 is connected to +9V voltage; the G pole of the MOS transistor Q4 is connected to the e pole connecting circuit of the triode Q2 and the triode Q3, and the S pole of the MOS transistor Q4 is connected to the power amplifier PA; and the circuit end of the resistor R4 is also connected with a capacitor C1 in parallel.
Preferably, the transistor Q1 and the transistor Q2 are both NPN transistors of the same type FMMT2222, the transistor Q3 is a PNP transistor of the same type MMBT2907, and the MOS transistor Q4 is a P-type MOS transistor of the same type IRLR 9343.
Preferably, the capacitor C1 is a 0805 packaged 1000p ceramic capacitor.
Preferably, the resistor R1 is a 2512-packaged 1K Ω resistor, the series resistors R2 and R3 are 0805-packaged 100 Ω resistors, and the resistor R4 is 0805-packaged 1K Ω resistor.
Compared with the prior art, the beneficial effects of the utility model are as follows:
according to the rapid power-on and power-off control circuit for the drain electrode of the power amplifier, two NPN type triodes Q1, a triode Q2, a PNP type triode Q3 and a P type MOS tube Q4 are adopted to realize that the level is switched into the TTL level, so that the power-on time of the drain electrode of the power amplifier is ns level in a switching system, and the rapid power-on and power-off of the drain electrode of the power amplifier can be accurately controlled.
Drawings
Fig. 1 is a schematic circuit diagram of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
Referring to fig. 1, a power amplifier drain fast on-off control circuit includes a transistor Q1, a transistor Q2, a transistor Q3 and a MOS transistor Q4, wherein the transistor Q1 and the transistor Q2 are both NPN transistors of a type FMMT2222, the transistor Q3 is a PNP transistor of a type MMBT2907, and the MOS transistor Q4 is a P-type MOS transistor of a type IRLR 9343; two NPN type triodes and one PNP type triode with the switching speed of about 500ns and a P type MOS tube with the switching speed of about 65ns are selected, so that the switching level is the TTL level; the b pole of the triode Q1 is connected with a 1K omega resistor R4 packaged in 0805, the resistor R4 is connected with TTL level, the c pole of the triode Q1 is connected with a 1K omega resistor R1 packaged in 2512, the resistor R1 is respectively connected with the c pole of the triode Q2 and the D pole of the MOS tube Q4, and the e pole of the triode Q1 is grounded; the b electrodes of a triode Q2 and a triode Q3 are connected with 100 omega series resistors R2 and R3 packaged in 0805, the series resistors R2 and R3 are connected with a circuit of a c electrode of a triode Q1, a triode Q2 is connected with an e electrode of a triode Q3, and a c electrode of a triode Q3 is connected with +9V voltage; the G pole of the MOS transistor Q4 is connected to the e pole connecting circuit of the triode Q2 and the triode Q3, and the S pole of the MOS transistor Q4 is connected to the power amplifier PA; the circuit end of the resistor R4 is also connected with a capacitor C1 in parallel; the capacitor C1 is a 1000p ceramic capacitor packaged in 0805, thereby having the effect of increasing the speed of circuit switching.
The circuit principle is as follows: when the TTL level is low, the triode Q1 is cut off, and the voltage of the c electrode of the triode Q1 is + 24V; the triode Q2 is conducted with the triode Q3, the e-pole voltage of the triode Q2 and the triode Q3 is 23.6V, at the moment, the MOS tube Q4 is closed, and the S-pole output voltage of the MOS tube Q4 is 0V; when the TTL level is high, the transistor Q1 is turned on, and at this time, the c-pole voltage of the transistor Q1 is 0; the triode Q2 and the triode Q3 are cut off, the e-pole voltage of the triode Q2 and the triode Q3 is 9V, the MOS transistor Q4 is turned on at this time, and the S-pole output voltage of the MOS transistor Q4 is + 24V.
In summary, the following steps: according to the rapid power on-off control circuit for the power amplifier drain electrode, the level is switched to the TTL level through the two NPN type triodes Q1, the triode Q2, the PNP type triode Q3 and the P type MOS tube Q4, so that the power on time of the power amplifier drain electrode is ns level in a switching system, rapid power on-off of the power amplifier drain electrode can be accurately controlled, and the problems in the prior art are effectively solved.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (6)
1. The utility model provides a quick break-make control circuit of power amplifier drain electrode, includes triode Q1, triode Q2, triode Q3 and MOS pipe Q4, its characterized in that: the b pole of the triode Q1 is connected to the resistor R4, the resistor R4 is connected to TTL level, the c pole of the triode Q1 is connected to the resistor R1, the resistor R1 is respectively connected to the c pole of the triode Q2 and the D pole of the MOS transistor Q4, and the e pole of the triode Q1 is grounded; the b electrodes of the triode Q2 and the triode Q3 are connected to series resistors R2 and R3, the series resistors R2 and R3 are connected to a circuit of the c electrode of the triode Q1, the e electrode of the triode Q2 and the e electrode of the triode Q3 are connected, and the c electrode of the triode Q3 is connected to +9V voltage; the G pole of the MOS transistor Q4 is connected to the e pole connecting circuit of the triode Q2 and the triode Q3, and the S pole of the MOS transistor Q4 is connected to the power amplifier PA; and the circuit end of the resistor R4 is also connected with a capacitor C1 in parallel.
2. The power amplifier drain electrode rapid power on-off control circuit according to claim 1, characterized in that: the transistor Q1 and the transistor Q2 are both NPN transistors of one type FMMT 2222.
3. The power amplifier drain electrode rapid power on-off control circuit according to claim 1, characterized in that: the transistor Q3 is a PNP transistor of the MMBT2907 model.
4. The power amplifier drain electrode rapid power on-off control circuit according to claim 1, characterized in that: the MOS pipe Q4 is a P type MOS pipe with a model number IRLR 9343.
5. The power amplifier drain electrode rapid power on-off control circuit according to claim 1, characterized in that: the capacitor C1 is a 1000p ceramic capacitor packaged in 0805.
6. The power amplifier drain electrode rapid power on-off control circuit according to claim 1, characterized in that: the resistor R1 is a 2512 packaged 1K omega resistor, the series resistors R2 and R3 are 0805 packaged 100 omega resistors, and the resistor R4 is 0805 packaged 1K omega resistor.
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CN201920769974.4U CN209992835U (en) | 2019-05-27 | 2019-05-27 | Power amplifier drain electrode fast on-off control circuit |
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CN201920769974.4U CN209992835U (en) | 2019-05-27 | 2019-05-27 | Power amplifier drain electrode fast on-off control circuit |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN114257180A (en) * | 2021-11-26 | 2022-03-29 | 中国电子科技集团公司第二十九研究所 | Low-power-consumption satellite-borne solid-state power amplifier control circuit |
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2019
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114257180A (en) * | 2021-11-26 | 2022-03-29 | 中国电子科技集团公司第二十九研究所 | Low-power-consumption satellite-borne solid-state power amplifier control circuit |
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