CN206349979U - A kind of Novel MOS tube ON-OFF control circuit - Google Patents
A kind of Novel MOS tube ON-OFF control circuit Download PDFInfo
- Publication number
- CN206349979U CN206349979U CN201621483967.0U CN201621483967U CN206349979U CN 206349979 U CN206349979 U CN 206349979U CN 201621483967 U CN201621483967 U CN 201621483967U CN 206349979 U CN206349979 U CN 206349979U
- Authority
- CN
- China
- Prior art keywords
- oxide
- metal
- semiconductor
- triode
- resistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
The utility model discloses a kind of Novel MOS tube ON-OFF control circuit, including the first metal-oxide-semiconductor, second metal-oxide-semiconductor, first triode, first resistor, second resistance and 3rd resistor, the drain electrode of first metal-oxide-semiconductor is connected with IN2+ signal terminals, the source electrode of first metal-oxide-semiconductor is connected with the source electrode of the second metal-oxide-semiconductor and the grid of the first metal-oxide-semiconductor is connected with the grid of the second metal-oxide-semiconductor, the drain electrode of second metal-oxide-semiconductor is connected with IN1+ signal terminals and OUT+ terminals, the grid of first metal-oxide-semiconductor is connected on the colelctor electrode of the first triode, the emitter stage of first triode is connected to ground wire, 3rd resistor is connected between the base stage of the first triode and emitter stage, the base stage of first triode is connected on 5VIN terminals by second resistance.Rationally, using double metal-oxide-semiconductors, can have prevents that anti-leakage is on IN2+ branch road, improving the stability in use and reliability of circuit for IN1+ signals to structure setting of the present utility model, strong applicability and practicality is good.
Description
Technical field
The utility model belongs to ON-OFF control circuit technical field, and in particular to a kind of Novel MOS tube ON-OFF control circuit.
Background technology
It is related to many load control circuits on current circuit directly to be controlled by triode, different load controls are used
Different triodes, as shown in Figure 1, the two paths of signals that has that can be to loaded work piece is that IN1+ directly powers load all the way, another
Road is then that IN2+ passes through triode Q1 to loaded work piece.When 5V IN signals do not come also, because triode Q1, Q2 locate
In cut-off state, IN2+ signal is will not to be directly over triode Q1 to loaded work piece.When 5V IN signals come, letter
Number running past resistance R2, triode Q2 makes the emitter stage of triode produce electric current and turn on, due to triode Q2 conducting,
IN2+ signal directly makes triode Q1 directly turn on by triode Q1, resistance R1 formation loop, under such circumstances, load
Direct-electrifying works.When the signal of loaded work piece is to come from IN1+, IN1+ signals electricity can anti-IN2+ be arrived in electric leakage by triode
, will be by anti-drain voltage if I wants to redesign the circuit of some complexity on IN2+ branch road on the branch road of signal
Interference effect.Because triode has leakage current characteristic, this is also to be difficult to avoid that, if circuit is directly replaced with metal-oxide-semiconductor in Fig. 1
It is also not all right if triode Q1, when reason is input signal IN1+, G, S pole of metal-oxide-semiconductor can form negative voltage and directly lead
It is logical, signal IN1+ and IN2+ is directly had conflict.So applicability is restricted to a certain extent.
The content of the invention
The purpose of this utility model is to provide the Novel MOS tube switch control that a kind of structure setting is reasonable and stability in use is good
Circuit processed.
The technical scheme for realizing the utility model purpose is a kind of Novel MOS tube ON-OFF control circuit, including the first MOS
Pipe, the second metal-oxide-semiconductor, the first triode, first resistor, second resistance and 3rd resistor, drain electrode and the IN2+ signals of the first metal-oxide-semiconductor
Terminal is connected, the source electrode of first metal-oxide-semiconductor be connected with the source electrode of the second metal-oxide-semiconductor and the grid of first metal-oxide-semiconductor with
The grid of second metal-oxide-semiconductor is connected, and the drain electrode of second metal-oxide-semiconductor is connected with IN1+ signal terminals and OUT+ terminals, described
First resistor is connected between drain electrode and the grid of the first metal-oxide-semiconductor, and the grid of first metal-oxide-semiconductor is connected to the first triode
On colelctor electrode, the emitter stage of first triode is connected to ground wire, and the 3rd resistor is connected to the base stage of the first triode
Between emitter stage, the base stage of first triode is connected on 5VIN terminals by second resistance.
The triode is NPN type triode.
First metal-oxide-semiconductor and the second metal-oxide-semiconductor are P-channel metal-oxide-semiconductor.
The utility model has positive effect：Structure setting of the present utility model rationally, using double metal-oxide-semiconductors, can have anti-
Only IN1+ signals are instead leaked to IN2+ branch road, so as to reduce the design of the complicated circuit on IN2+ branch roads, so that will not
The interference effect that IN1+ signals are inputted suddenly is received, the stability in use and reliability of circuit, strong applicability and practicality is improved
Property is good.
Brief description of the drawings
In order that content of the present utility model is more likely to be clearly understood, below according to specific embodiment and with reference to attached
Figure, is described in further detail to the utility model, wherein：
Fig. 1 is the electrical block diagram of conventional art；
Fig. 2 is electrical block diagram of the present utility model.
Embodiment
（Embodiment 1）
Fig. 2 shows a kind of embodiment of the present utility model, and wherein Fig. 2 is that circuit structure of the present utility model shows
It is intended to.
See Fig. 2, a kind of Novel MOS tube ON-OFF control circuit, including the first metal-oxide-semiconductor Q1, the second metal-oxide-semiconductor Q2, the one or three pole
Pipe Q3, first resistor R1, second resistance R2 and 3rd resistor R3, the drain electrode of the first metal-oxide-semiconductor are connected with IN2+ signal terminals, institute
State the first metal-oxide-semiconductor source electrode be connected with the source electrode of the second metal-oxide-semiconductor and first metal-oxide-semiconductor grid and the grid of the second metal-oxide-semiconductor
Pole is connected, and the drain electrode of second metal-oxide-semiconductor is connected with IN1+ signal terminals and OUT+ terminals, and the first resistor is connected to
Between the drain electrode of first metal-oxide-semiconductor and grid, the grid of first metal-oxide-semiconductor is connected on the colelctor electrode of the first triode, described
The emitter stage of first triode is connected to ground wire, and the 3rd resistor is connected between the base stage of the first triode and emitter stage,
The base stage of first triode is connected on 5VIN terminals by second resistance.
The triode is NPN type triode.
First metal-oxide-semiconductor and the second metal-oxide-semiconductor are P-channel metal-oxide-semiconductor.
It is when in use that IN1+ directly powers load all the way, another road is then to the two paths of signals that has of loaded work piece
IN2+ is by two metal-oxide-semiconductors Q1, Q2 to loaded work piece.
When 5V IN signals do not come also, IN2+ signal is directly over the diode built in metal-oxide-semiconductor Q1, makes Q1 S
Pole is in high level, due to resistance R1 design, and metal-oxide-semiconductor Q1, Q2 G poles and the voltage of S poles are equal, under such circumstances MOS
Pipe Q2 is at cut-off state, and IN2+ signal electricity can not be directly to loaded work piece.
When 5V IN signals come, signal, which runs past resistance R2, triode Q3, makes the emitter stage of triode produce electricity
Flow and turn on, under such circumstances, metal-oxide-semiconductor Q1, Q2 G poles draw ground to be low level, two metal-oxide-semiconductors Q1, Q2 G pole tensions simultaneously
It is smaller than S pole tension, formed negative voltage and turn on, load just directly electric work.
When the electricity of loaded work piece is to come from IN1+, IN1+ signal can make by the diode built in metal-oxide-semiconductor Q2
Two metal-oxide-semiconductors Q1, Q2 S poles are in high level state, and due to resistance R1 design, two metal-oxide-semiconductors Q1, Q2 G poles are simultaneously
High level state, under such circumstances, metal-oxide-semiconductor Q1 G poles and S pole tensions are equal, do not become negative voltage and are in cut-off shape
State, such IN1+ signals counter would not leak electricity onto IN2+ branch road.
Rationally, using double metal-oxide-semiconductors, can have prevents IN1+ signals from instead leaking to IN2+ branch road to structure setting of the present utility model
On, so as to reduce the design of the complicated circuit on IN2+ branch roads, so that the interference that IN1+ signals are inputted suddenly will not be received
Influence, improves the stability in use and reliability of circuit, strong applicability and practicality is good.
Obviously, above-described embodiment of the present utility model is only intended to clearly illustrate the utility model example, and
It is not the restriction to embodiment of the present utility model.For those of ordinary skill in the field, in described above
On the basis of can also make other changes in different forms.There is no need and unable to give all embodiments
It is exhaustive.And these belong to the obvious changes or variations that connotation of the present utility model extends out and still fall within this practicality
New protection domain.
Claims (3)
1. a kind of Novel MOS tube ON-OFF control circuit, including the first metal-oxide-semiconductor, the second metal-oxide-semiconductor, the first triode, first resistor,
Second resistance and 3rd resistor, it is characterised in that：The drain electrode of first metal-oxide-semiconductor is connected with IN2+ signal terminals, the first MOS
The source electrode of pipe is connected with the source electrode of the second metal-oxide-semiconductor and the grid of first metal-oxide-semiconductor is connected with the grid of the second metal-oxide-semiconductor,
The drain electrode of second metal-oxide-semiconductor is connected with IN1+ signal terminals and OUT+ terminals, and the first resistor is connected to the first metal-oxide-semiconductor
Drain electrode and grid between, the grid of first metal-oxide-semiconductor is connected on the colelctor electrode of the first triode, first triode
Emitter stage be connected to ground wire, the 3rd resistor is connected between the base stage of the first triode and emitter stage, the described 1st
The base stage of pole pipe is connected on 5VIN terminals by second resistance.
2. a kind of Novel MOS tube ON-OFF control circuit according to claim 1, it is characterised in that：The triode is NPN
Type triode.
3. a kind of Novel MOS tube ON-OFF control circuit according to claim 2, it is characterised in that：First metal-oxide-semiconductor and
Second metal-oxide-semiconductor is P-channel metal-oxide-semiconductor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621483967.0U CN206349979U (en) | 2016-12-30 | 2016-12-30 | A kind of Novel MOS tube ON-OFF control circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621483967.0U CN206349979U (en) | 2016-12-30 | 2016-12-30 | A kind of Novel MOS tube ON-OFF control circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206349979U true CN206349979U (en) | 2017-07-21 |
Family
ID=59323323
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201621483967.0U Active CN206349979U (en) | 2016-12-30 | 2016-12-30 | A kind of Novel MOS tube ON-OFF control circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206349979U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112104347A (en) * | 2020-11-19 | 2020-12-18 | 成都梦马云创科技有限公司 | Signal analog switch |
| CN112688681A (en) * | 2020-12-25 | 2021-04-20 | 上海星融汽车科技有限公司 | Bus switching circuit based on MOS |
| US11177770B2 (en) | 2019-06-14 | 2021-11-16 | Changshu Friends Connector Technology Co., Ltd. | Controllable system for shutting down connection between photovoltaic panels |
-
2016
- 2016-12-30 CN CN201621483967.0U patent/CN206349979U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11177770B2 (en) | 2019-06-14 | 2021-11-16 | Changshu Friends Connector Technology Co., Ltd. | Controllable system for shutting down connection between photovoltaic panels |
| CN112104347A (en) * | 2020-11-19 | 2020-12-18 | 成都梦马云创科技有限公司 | Signal analog switch |
| CN112688681A (en) * | 2020-12-25 | 2021-04-20 | 上海星融汽车科技有限公司 | Bus switching circuit based on MOS |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN206349979U (en) | A kind of Novel MOS tube ON-OFF control circuit | |
| CN108958344A (en) | substrate bias generating circuit | |
| CN105094206A (en) | Bias circuit | |
| CN207150553U (en) | A kind of current-limiting circuit and MOS switch device for metal-oxide-semiconductor | |
| CN103018588B (en) | Low-power-consumption anti-interference three-state input detection circuit | |
| CN205265658U (en) | Switching signal input circuit | |
| CN106786462B (en) | A kind of amplifier switching mode overvoltage crowbar | |
| CN209132405U (en) | Switching-on and switching-off state detection circuit | |
| CN207150552U (en) | Analog switching circuit | |
| CN102681449B (en) | A kind of switching value input circuit of engineering machinery nonshared control unit | |
| CN103701456A (en) | Power amplifier external interface circuit | |
| CN103346794A (en) | Digital-to-analog converter | |
| CN103091543B (en) | Current detection circuit, constant current circuit and battery charging and discharging protective system | |
| CN202903932U (en) | Anti-interference three-state input detection circuit with low power consumption | |
| CN205005032U (en) | Electric circuit | |
| CN103138704B (en) | It is suitable for the voltage control variable resistor of big scale signal application | |
| CN205450857U (en) | No branch road leakage current's active current limit circuit | |
| CN208433743U (en) | A kind of excess temperature overvoltage crowbar | |
| CN107395176A (en) | A kind of current-limiting circuit and MOS switch device for metal-oxide-semiconductor | |
| CN204945248U (en) | A kind of resistance testing circuit for power brick non-co-ground cascaded structure | |
| CN219812147U (en) | Simple AND gate logic circuit | |
| CN104868901A (en) | Signal detection circuit | |
| CN202798629U (en) | Bi-CMOS (complementary metal oxide semiconductor) switching circuit | |
| CN107203727A (en) | A kind of undistorted absolute value circuit being made up of common amplifier | |
| CN204886904U (en) | Analog switch circuit |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant |