CN209981211U - IGBT driving module with adsorption structure - Google Patents
IGBT driving module with adsorption structure Download PDFInfo
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- CN209981211U CN209981211U CN201920618066.5U CN201920618066U CN209981211U CN 209981211 U CN209981211 U CN 209981211U CN 201920618066 U CN201920618066 U CN 201920618066U CN 209981211 U CN209981211 U CN 209981211U
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Abstract
The utility model relates to an IGBT driving module with an adsorption structure, which comprises an IGBT module, an adsorption module connector and a driving module; n wiring terminals are arranged on the top of the IGBT shell and connected to the IGBT functional chip; the adsorption module comprises an annular outer frame, the adsorption module is divided into N capacitor areas according to the number of wiring terminals, a plurality of thin film capacitors are arranged in each capacitor area in a laminated mode, the thin film capacitors are connected with one another end to end, the thin film capacitor on the innermost side is connected with a wiring board, a wiring hole in the wiring board is sleeved on the wiring terminal, and the thin film capacitor on the outermost side is connected to an adsorption module wiring device through a conducting strip embedded in the annular outer frame; the top of the annular outer frame is covered with a shielding plate, the outer edge of the shielding plate is contacted with the annular outer frame, and a metal shielding sheet is embedded in the middle of the concave layer of the shielding plate; a driving module is embedded in the inner concave layer of the shielding plate, and a wiring terminal of the driving module is inserted into the lead access socket.
Description
Technical Field
The utility model relates to a take adsorption structure's IGBT drive module belongs to IGBT and makes the field.
Background
In the field of new energy vehicles, an IGBT is used as a main core power device, and the peripheral driving and absorbing mechanisms of the IGBT seriously influence the service life of the IGBT module and other functional parts; in the prior art, the IGBT module is generally directly inserted into the driving circuit, the IGBT module is generally packaged by an insulating housing, the shielding resistance is poor, and the absorption module is generally externally connected to the IGBT module and the power circuit, and cannot absorb electrons in a loop of the IGBT module in time, which still easily causes breakdown of the IGBT module.
SUMMERY OF THE UTILITY MODEL
The to-be-solved technical problem of the utility model is: the technical problems of poor anti-interference performance and low absorption efficiency of a direct-insertion type IGBT module in the prior art are solved, and the IGBT driving module with the adsorption structure is provided.
The utility model provides a technical scheme that its technical problem adopted is:
an IGBT driving module with an adsorption structure comprises an IGBT module, an adsorption module wire connector and a driving module; the IGBT module comprises an IGBT shell, N wiring terminals are arranged on the top of the IGBT shell, and the wiring terminals are connected to the IGBT functional chip; the adsorption module is of an annular structure and comprises an annular outer frame, the adsorption module is divided into N capacitor areas according to the number of wiring terminals, a plurality of thin film capacitors are arranged in each capacitor area in a stacked mode, the thin film capacitors are embedded in the annular outer frame, each layer of thin film capacitors are connected end to end, a wiring board is connected to the thin film capacitor on the innermost side, a wiring hole in the wiring board is sleeved on the wiring terminal, the thin film capacitor on the outermost side is connected to an adsorption module wire connector through a conducting strip embedded in the annular outer frame, the N wiring terminals comprise at least one ground terminal, and in the adsorption module wire connector, a wiring board A of the ground terminal is connected to wiring boards B of other terminals through diodes facing the ground terminal in the conduction direction; the shielding plate is covered on the top of the annular outer frame, an inner concave layer is arranged in the middle of the shielding plate, the outer edge of the shielding plate is in contact with the annular outer frame, the inner concave layer is embedded into the annular outer frame, the shielding plate is made of insulating materials, a metal shielding sheet is embedded in the middle of the inner concave layer of the shielding plate, N wiring terminal positioning holes are formed in the middle of the shielding plate, and the inner wall of each wiring terminal positioning hole and the shielding plate are of an integrated structure; a driving module is embedded in the inner concave layer of the shielding plate, a lead access socket is arranged at the bottom of the driving module, a wiring terminal is inserted into the lead access socket, and a leading-out wiring is arranged at the top of the driving module.
As a further improvement of the utility model, the annular outer frame and the shielding plate are made of POM materials.
As a further improvement of the utility model, the film capacitor comprises two layers of metal foils arranged according to the outline of the annular outer frame, and the polyethylene ester is filled between the metal foils.
As a further improvement, the back of the shielding plate corresponding to the concave layer of the shielding plate is provided with a protrusion, and the edge of the protrusion and the inner wall of the annular outer frame are in interference fit.
As the utility model discloses a further improvement, it has a grounding lug to inlay between the adjacent electric capacity district, the grounding lug embedding is in the annular frame, and the grounding lug is connected to on the wiring board A of absorption module connector through electric capacity.
The utility model has the advantages that:
1. the utility model discloses a cladding realizes the absorption to the IGBT electron in the outside annular frame structure's of IGBT module absorption module, utilizes flaky electric capacity structure simultaneously, can also effectual realization to the shielding of IGBT module to guarantee drive circuit's stability, this structure has still realized the stable range upon range of fixedly of drive module with the IGBT module through the shield plate, has also guaranteed the shielding effect.
2. The POM material has the characteristics of flame retardance and high temperature resistance, is easy to process and has higher hardness.
3. The interference fit enables the disassembly and maintenance between the shielding plate and the annular outer frame to be possible, and the fixing stability is high.
4. The grounding piece can reduce the interference between adjacent capacitors and reduce the possibility of breakdown between the capacitors.
Drawings
The present invention will be further explained with reference to the drawings and examples.
Fig. 1 is a top view of the present invention;
fig. 2 is a side view of the present invention.
In the figure: 1. an annular outer frame; 2. an IGBT housing; 3. a wiring terminal; 4. a wiring board A; 5. a wiring board B; 6. a ground terminal; 7. a thin film capacitor; 8. a poly (ethyl ester); 9. a ground plate; 10. an adsorption module wire connector; 11. a conductive sheet; 12. a drive module; 13. a shielding plate; 14. a metal shielding sheet; 15. the leads are connected into the sockets.
Detailed Description
The present invention will now be described in further detail with reference to the accompanying drawings. These drawings are simplified schematic drawings and illustrate the basic structure of the present invention only in a schematic manner, and thus show only the components related to the present invention.
As shown in fig. 1, the present invention relates to an IGBT driving module with an adsorption structure as shown in fig. 1, which comprises an IGBT module, an adsorption module connector and a driving module; the IGBT module comprises an IGBT shell, N wiring terminals are arranged on the top of the IGBT shell, and the wiring terminals are connected to the IGBT functional chip; the adsorption module is of an annular structure and comprises an annular outer frame, the annular outer frame is made of POM, the adsorption module is divided into N capacitance areas according to the number of wiring terminals, a grounding sheet is embedded between adjacent capacitance areas and is embedded in the annular outer frame, a plurality of thin film capacitors are arranged in each capacitance area in a stacking mode, each thin film capacitor comprises two layers of metal foils arranged according to the outline of the annular outer frame, polyethylene is filled between the metal foils, the thin film capacitors are embedded in the annular outer frame, the head and the tail of each thin film capacitor are communicated through conducting sheets, the thin film capacitor on the innermost side is connected with a wiring board, a wiring hole on the wiring board is sleeved on the wiring terminal, the thin film capacitor on the outermost side is connected to an adsorption module wire connector through the conducting sheets embedded in the annular outer frame, the N wiring terminals comprise at least one ground wire terminal, and in the adsorption module wire connector, the wiring board A of the ground terminal is connected to the wiring board B of the other terminals through a diode facing the ground terminal in the conducting direction, and the grounding piece is connected to the wiring board A of the adsorption module wire connector through a capacitor; as shown in fig. 2, a shielding plate made of POM material covers the top of the annular outer frame, an inner concave layer is arranged in the middle of the shielding plate, the outer edge of the shielding plate contacts with the annular outer frame, a protruding portion is arranged on the inner concave layer of the shielding plate corresponding to the back of the shielding plate, the edge of the protruding portion and the inner wall of the annular outer frame are in interference fit, so that the inner concave layer is embedded into the annular outer frame, the shielding plate is made of insulating material, a metal shielding sheet is embedded in the middle of the inner concave layer of the shielding plate, N connecting terminal positioning holes are arranged in the middle of the shielding plate, and the inner wall of each connecting terminal positioning hole and the shielding plate are in; a driving module is embedded in the inner concave layer of the shielding plate, a lead access socket is arranged at the bottom of the driving module, a wiring terminal is inserted into the lead access socket, and a leading-out wiring is arranged at the top of the driving module.
Through the structure, the driving module and the adsorption module are connected in parallel, and in the on-off process of the IGBT driving module, part of electric energy can enter the adsorption module connected in parallel, and then the multi-layer film capacitor is charged, so that the influence of electric energy impact on the driving module is reduced, and similarly, in the off process, the electric energy returned by the driving module can also be absorbed by the film capacitor; after absorption is completed, the electric energy is finally released through grounding; meanwhile, the structure benefits from multiple layers of thin film capacitors, a multi-layer shielding structure is generated, and the influence of high-frequency current in the IGBT on the driving module can be effectively reduced by matching with the shielding plate; the magnetic field generated by the high-frequency current can directly magnetize the thin-film capacitor and is consumed through the thin-film capacitor, so that the magnetic field cannot enter the driving module.
In light of the foregoing, it will be apparent to those skilled in the art from this disclosure that various changes and modifications can be made without departing from the spirit and scope of the invention. The technical scope of the present invention is not limited to the content of the specification, and must be determined according to the scope of the claims.
Claims (5)
1. The utility model provides a take adsorption structure's IGBT drive module, characterized by: the IGBT module, the adsorption module wire connector and the driving module are included; the IGBT module comprises an IGBT shell, N wiring terminals are arranged on the top of the IGBT shell, and the wiring terminals are connected to the IGBT functional chip; the adsorption module is of an annular structure and comprises an annular outer frame, the adsorption module is divided into N capacitor areas according to the number of wiring terminals, a plurality of thin film capacitors are arranged in each capacitor area in a stacked mode, the thin film capacitors are embedded in the annular outer frame, each layer of thin film capacitors are connected end to end, a wiring board is connected to the thin film capacitor on the innermost side, a wiring hole in the wiring board is sleeved on the wiring terminal, the thin film capacitor on the outermost side is connected to an adsorption module wire connector through a conducting strip embedded in the annular outer frame, the N wiring terminals comprise at least one ground terminal, and in the adsorption module wire connector, a wiring board A of the ground terminal is connected to wiring boards B of other terminals through diodes facing the ground terminal in the conduction direction; the shielding plate is covered on the top of the annular outer frame, an inner concave layer is arranged in the middle of the shielding plate, the outer edge of the shielding plate is in contact with the annular outer frame, the inner concave layer is embedded into the annular outer frame, the shielding plate is made of insulating materials, a metal shielding sheet is embedded in the middle of the inner concave layer of the shielding plate, N wiring terminal positioning holes are formed in the middle of the shielding plate, and the inner wall of each wiring terminal positioning hole and the shielding plate are of an integrated structure; a driving module is embedded in the inner concave layer of the shielding plate, a lead access socket is arranged at the bottom of the driving module, a wiring terminal is inserted into the lead access socket, and a leading-out wiring is arranged at the top of the driving module.
2. The IGBT driving module with an adsorption structure according to claim 1, wherein: the annular outer frame and the shielding plate are made of POM materials.
3. The IGBT driving module with an adsorption structure according to claim 1, wherein: the thin film capacitor comprises two layers of metal foils arranged according to the outline of an annular outer frame, and polyethylene is filled between the metal foils.
4. The IGBT driving module with an adsorption structure according to claim 1, wherein: the inner concave layer of the shielding plate is provided with a convex part corresponding to the back part of the shielding plate, and the edge of the convex part is in interference fit with the inner wall of the annular outer frame.
5. The IGBT driving module with an adsorption structure according to claim 1, wherein: and a grounding sheet is embedded between the adjacent capacitance areas, the grounding sheet is embedded in the annular outer frame, and the grounding sheet is connected to a wiring board A of the adsorption module wire connector through a capacitor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920618066.5U CN209981211U (en) | 2019-04-30 | 2019-04-30 | IGBT driving module with adsorption structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920618066.5U CN209981211U (en) | 2019-04-30 | 2019-04-30 | IGBT driving module with adsorption structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN209981211U true CN209981211U (en) | 2020-01-21 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201920618066.5U Expired - Fee Related CN209981211U (en) | 2019-04-30 | 2019-04-30 | IGBT driving module with adsorption structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN209981211U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111613614A (en) * | 2020-06-29 | 2020-09-01 | 青岛歌尔智能传感器有限公司 | System-in-package structure and electronic device |
-
2019
- 2019-04-30 CN CN201920618066.5U patent/CN209981211U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111613614A (en) * | 2020-06-29 | 2020-09-01 | 青岛歌尔智能传感器有限公司 | System-in-package structure and electronic device |
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| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20200121 Termination date: 20200430 |
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| CF01 | Termination of patent right due to non-payment of annual fee |