CN209961389U - Monocrystalline silicon high overvoltage protection type pressure sensor - Google Patents
Monocrystalline silicon high overvoltage protection type pressure sensor Download PDFInfo
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- CN209961389U CN209961389U CN201920789702.0U CN201920789702U CN209961389U CN 209961389 U CN209961389 U CN 209961389U CN 201920789702 U CN201920789702 U CN 201920789702U CN 209961389 U CN209961389 U CN 209961389U
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Abstract
The utility model discloses a monocrystalline silicon high overvoltage protection type pressure sensor, which comprises a positive pressure body, a back pressure body and a tube seat; malleation body and external member welding, malleation body lower extreme, backpressure body upper end is equipped with the isolation diaphragm, isolation diaphragm and malleation body, the backpressure body passes through the diaphragm weld ring welding and forms accommodation space, malleation body upper end is equipped with the tube socket, the ligature board is installed in tube socket lower extreme mounting groove, the sensor chip passes the ligature board rectangular hole and binds with the ligature board and be connected, malleation body passageway upper end intercommunication sensor chip's malleation end, lower extreme intercommunication malleation end isolation diaphragm, set up the electrical property interface on the tube socket, the tube socket has malleation passageway and backpressure passageway, malleation passageway intercommunication sensor chip malleation end, central protection diaphragm, backpressure passageway intercommunication sensor chip backpressure end, the backpressure end isolation diaphragm, central protection diaphragm sets up between backpressure body and tube socket. The pressure sensor not only meets the sealing requirement, but also can realize the function of communicating with the atmosphere.
Description
Technical Field
The invention belongs to the technical field of pressure sensors, and particularly relates to a high-reliability and high-over-voltage protection type pressure sensor.
Background
The pressure sensor is a mechanical property detection device which is used for measuring the pressure of fluid such as liquid, gas or steam, converting the measured pressure physical quantity into an electric signal for output, converting the electric signal into a 4-20 mA standard current signal for output after amplification, compensation and conditioning through a circuit so as to meet the requirements of information transmission, processing, storage, display, recording, control and the like.
At present, in order to realize the function of measuring pressure, one end of the pressure sensor is communicated with the atmosphere, so that one end of the sensor chip is communicated with the atmosphere. During the application of pressure, if a large amount of pressure exceeding the range of the sensor is transmitted to directly act on the sensor chip, the sensor chip can be broken, and the sensor can be irreversibly damaged. In addition, the pressure-guiding medium can be directly punched out through the broken chip, and damage to the equipment is caused. And the single side of the sensor chip contacts with the pressure guide medium, and the influence of expansion with heat and contraction with cold on the pressure guide medium under the influence of temperature on the chip is large. Meanwhile, due to the influence of the isolation liquid and the isolation diaphragm, the measuring range of the sensor cannot be greatly reduced, and the measuring range of the pressure is limited. During gauge pressure measurement, a sensor back pressure cavity must be directly referenced to the atmosphere, and the sensor is easily damaged due to moisture influence and dewing or corrosive environment influence. Therefore, how to satisfy the sealing requirement of the pressure sensor and realize the function of communicating with the atmosphere is the focus of the current sensor research.
SUMMERY OF THE UTILITY MODEL
Utility model purpose: the utility model aims at providing a high overvoltage protection type pressure sensor of monocrystalline silicon that not only satisfies sealed requirement but also will realize communicating function with the atmosphere.
In order to achieve the above purpose, the utility model adopts the following technical scheme: a monocrystalline silicon high overvoltage protection type pressure sensor comprises an external connecting piece, a positive pressure body, a backpressure body, a pipe seat and a threaded connecting piece;
the external connector is used for connecting a conveying pipeline of the process fluid to be detected, and the positive pressure body is welded with the external connector and used for sensing the pressure of the process fluid to be detected;
the lower end of the positive pressure body is provided with a positive pressure end isolation diaphragm, the positive pressure end isolation diaphragm and the positive pressure body are welded through a diaphragm welding ring to form an accommodating space, and a pressure guide medium is filled in the accommodating space;
a back pressure end isolation diaphragm is arranged at the upper end of the back pressure body, the back pressure end isolation diaphragm and the back pressure body are welded through a diaphragm welding ring to form an accommodating space, and a pressure guide medium is filled in the accommodating space;
when the positive pressure end isolation diaphragm and the back pressure end isolation diaphragm are under the action of pressure, the containing space can be extruded, and the same pressure is applied to the pressure guide medium, so that the pressure transmission is realized;
the sensor chip is in binding connection with the binding plate through the binding line, is a monocrystalline silicon chip and is provided with a positive pressure end and a back pressure end, wherein the positive pressure end faces downwards, and the back pressure end faces upwards;
the positive pressure body is provided with a positive pressure body channel, the upper end of the positive pressure body channel is communicated with the positive pressure end of the sensor chip, and the lower end of the positive pressure body channel is communicated with the positive pressure end isolation diaphragm;
the tube seat is provided with an electrical interface which can provide power for the sensor chip and receive an electrical signal transmitted outwards by the sensor chip;
the tube seat is provided with a positive pressure channel and a back pressure channel which are completely isolated, one end of the positive pressure channel penetrates through the binding plate and is communicated with a positive pressure end of the sensor chip, the other end of the positive pressure channel is communicated with the central protective diaphragm, one end of the back pressure channel is communicated with a back pressure end of the sensor chip, and the other end of the back pressure channel is communicated with the back pressure end isolation diaphragm;
the tube base is also provided with a positive pressure cavity cross hole oil duct and a back pressure cavity cross hole oil duct, one end of the positive pressure cavity cross hole oil duct is communicated with the positive pressure channel, the other end of the positive pressure cavity cross hole oil duct is used as a positive pressure channel pressure guide medium filling hole, one end of the back pressure cavity cross hole oil duct is communicated with the back pressure channel, and the other end of the back pressure cavity cross hole oil duct is used as a back pressure channel;
the central protection diaphragm is arranged between the backpressure body and the pipe seat, the central protection diaphragm is completely sealed with the backpressure body and the pipe seat in a welding mode, and a through hole is formed in the central protection diaphragm;
the upper end of the pipe seat and the lower end of the backpressure body are provided with grooves corresponding in position, a sleeve is arranged in each groove, the sleeve penetrates through a through hole of the central protective diaphragm, and the other end of the backpressure channel is communicated with the backpressure end isolation diaphragm through the sleeve;
the positive pressure body upper end still is equipped with threaded connection spare, and threaded connection spare is last to be equipped with the through-hole, holds tube socket and backpressure body in the through-hole.
Furthermore, positive pressure end isolation diaphragm and back pressure end isolation diaphragm are the wave respectively, and just the positive pressure body lower terminal surface is the wave with back pressure body up end equally.
Furthermore, two sealing rings are arranged outside the sleeve, and the sealing rings further ensure the complete isolation of the positive pressure channel and the back pressure channel.
Further, the sealing ring is an elastic piece made of rubber.
Furthermore, the external connector is connected with a conveying pipeline of the process fluid to be detected through external threads.
Has the advantages that:
(1) the monocrystalline silicon high-overpressure protection type pressure sensor realizes the one-way overpressure protection function by arranging the central protection diaphragm, and the positive pressure end and the back pressure end of the pressure sensor can be isolated by welding the central protection diaphragm with the back pressure body and the pipe seat respectively and welding the pipe seat and the positive pressure body together, so that the process is simple and the sealing property is good;
(2) the positive pressure body and the back pressure body have simple structures, are convenient to process and have easy control on precision;
(3) the interior of the monocrystalline silicon high-overvoltage protection type pressure sensor is isolated from the atmosphere, and the problem that the sensor is damaged due to dewing or corrosive environment influence is solved. The sensor chip is in double-sided contact with the pressure guide medium, so that the long-term stability and the temperature characteristic of the sensor are improved.
Drawings
Fig. 1 is a schematic top view of a monocrystalline silicon high overvoltage protection type pressure sensor according to the present invention;
FIG. 2 is a cross-sectional view taken along line A-A of FIG. 1;
FIG. 3 is a cross-sectional view taken along line B-B of FIG. 2;
FIG. 4 is an enlarged view at C of FIG. 2;
in the figure: 10-an external connector; 20-positive pressure body; 30-tube seat; 40-a backpressure body; 50-a threaded connection; 201-positive end isolation diaphragm; 202-diaphragm weld ring; 203-positive pressure body passage; 301-a sensor chip; 302-binding the plate; 303-backpressure passage; 304-a positive pressure channel; 305-an electrical interface; 306-back pressure cavity cross bore oil passage; 307-positive pressure cavity cross bore oil gallery; 401-back pressure end isolation diaphragm; 402-a central protective diaphragm; 403-a cannula; 404-sealing ring.
The specific implementation mode is as follows:
the present invention will be further explained with reference to the accompanying drawings.
As shown in fig. 1 to 3, the utility model discloses a high overvoltage protection type pressure sensor of monocrystalline silicon, including external piece 10, malleation body 20, backpressure body 40, tube socket 30 and threaded connection 50.
The external connector 10 is used for connecting a conveying pipeline of the process fluid to be detected, and the positive pressure body 20 is welded with the external connector 10 and used for sensing the pressure of the process fluid to be detected.
The positive pressure body 20 lower extreme is equipped with positive pressure end isolation diaphragm 201, and positive pressure end isolation diaphragm 201 forms accommodation space with positive pressure body 20 through the welding of diaphragm welding ring 202, and accommodation space intussuseption is filled with and leads the pressure medium.
The upper end of the backpressure body 40 is provided with a backpressure end isolation diaphragm 401, the backpressure end isolation diaphragm 401 and the backpressure body 40 are welded through a diaphragm welding ring 202 to form an accommodating space, and a pressure guide medium is filled in the accommodating space.
When the positive pressure end isolation diaphragm 201 and the back pressure end isolation diaphragm 401 are under pressure, the containing space can be squeezed, and the same pressure is applied to the pressure medium, so that the pressure transmission is realized.
The positive pressure body 20 is provided with a positive pressure body channel 203, the upper end of the positive pressure body channel 203 is communicated with the positive pressure end of the sensor chip 301, and the lower end of the positive pressure body channel 203 is communicated with the positive pressure end isolation diaphragm 201.
The tube seat 30 is provided with a completely isolated positive pressure channel 304 and a back pressure channel 303, one end of the positive pressure channel 304 passes through the binding plate 302 and is communicated with the positive pressure end of the sensor chip 301, the other end of the positive pressure channel is communicated with the central protection diaphragm 402, one end of the back pressure channel 303 is communicated with the back pressure end of the sensor chip 301, and the other end of the back pressure channel 303 is communicated with the back pressure end isolation diaphragm 401;
the tube seat 30 further has a positive pressure cavity cross bore oil passage 307 and a back pressure cavity cross bore oil passage 306, one end of the positive pressure cavity cross bore oil passage 307 is communicated with the positive pressure channel 304, the other end of the positive pressure cavity cross bore oil passage is used as a pressure medium charging hole guided by the positive pressure channel 304, one end of the back pressure cavity cross bore oil passage 306 is communicated with the back pressure channel 303, and the other end of the back pressure cavity cross bore oil passage 306 is used as a pressure medium charging hole.
The central protection diaphragm 402 is arranged between the backpressure body 40 and the tube seat 30, the central protection diaphragm 402 is completely sealed with the backpressure body 40 and the tube seat 30 respectively in a welding mode, and the central protection diaphragm 402 is provided with a through hole.
The upper end of the tube seat 30 and the lower end of the backpressure body 40 are provided with grooves with corresponding positions, a sleeve 403 is arranged in each groove, the sleeve 403 penetrates through a through hole of the central protective diaphragm 402, and the other end of the backpressure channel 303 is communicated with a backpressure end isolation diaphragm 401 through the sleeve 403.
The upper end of the positive pressure body 20 is further provided with a threaded connector 50, the threaded connector 50 is provided with a through hole, and the pipe seat 30 and the back pressure body 40 are contained in the through hole.
As shown in fig. 1 and 4, in the present embodiment, the positive pressure side isolation diaphragm 201 and the back pressure side isolation diaphragm 401 are respectively in a wave shape, and the lower end surface of the positive pressure body 20 and the upper end surface of the back pressure body 40 are also in a wave shape. By the design, the accommodating space between the positive pressure body 20 and the positive pressure end isolation diaphragm 201 and the accommodating space between the back pressure body 40 and the back pressure end isolation diaphragm 401 can be increased, so that the storage capacity of the pressure guide medium can be increased. In addition, the positive pressure side isolation diaphragm 201 and the back pressure side isolation diaphragm 401 can be made to rebound better after receiving pressure.
As shown in fig. 2, two sealing rings 404 are disposed outside the sleeve 403, and the sealing rings 404 further ensure complete isolation of the positive pressure channel 304 from the back pressure channel 303; the sealing ring 404 is an elastic member made of rubber.
Preferably, the extension piece 10 is connected to the conveying pipe of the process fluid to be detected by external threads.
When the monocrystalline silicon high overvoltage protection type pressure sensor works, pressure guide media are filled into the positive pressure channel through the positive pressure cavity cross hole oil duct, the pressure guide media are filled into the back pressure channel through the back pressure cavity cross hole oil duct, the pressure guide media are uniformly distributed in the positive pressure channel and the back pressure channel, and the two channels are completely isolated. The pressure-guiding medium can be silicone oil, fluorine oil, vegetable oil and other media, and is not limited by the utility model discloses, in this embodiment, the pressure-guiding medium is silicone oil.
When the pressure of the process fluid to be detected in the external connector acts on the positive pressure end isolation diaphragm, the positive pressure end isolation diaphragm is pressed to form a pressure guide medium in the accommodating space between the positive pressure body and the extrusion, so that the pressure guide medium transmits pressure to the positive pressure end of the sensor chip through the positive pressure body channel 203. Meanwhile, when external atmospheric pressure acts on the back pressure end isolation diaphragm, the back pressure end isolation diaphragm is pressed by the pressure to extrude the back pressure end isolation diaphragm and the back pressure body to form pressure guide media in the accommodating space, and the pressure guide media transmit pressure to the back pressure end of the sensor chip through the back pressure channel. The sensor chip is slightly deformed under the action of forward pressure and back-to-atmosphere pressure, so that the resistance value of a bridge resistor inside the sensor chip is changed, the outward output current of the sensor chip is changed, and the outward output current is transmitted to a corresponding instrument through the binding plate, and the pressure value of the measuring system is measured.
When the positive pressure body is subjected to larger one-way overload pressure, the pressure is transmitted to the central protection diaphragm through the pressure guide medium, the central protection diaphragm deforms towards the direction of the back pressure body due to the pressure, and the pressure is transmitted to the back pressure body through the pressure guide medium, so that the larger one-way overload pressure can only act on the sensor body and can not be transmitted to act on the sensor chip, and therefore the pressure sensor has a reliable one-way pressure overload protection function and the performance of the sensor is improved. The central protective membrane has the characteristic of not deforming under the rated pressure and deforming beyond the rated pressure. The interior of the monocrystalline silicon high-overvoltage protection type pressure sensor is isolated from the atmosphere, and the problem that the sensor is damaged due to dewing or corrosive environment influence is solved. The sensor chip is in double-sided contact with the pressure guide medium, so that the long-term stability and the temperature characteristic of the sensor are improved.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, a plurality of modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (5)
1. A monocrystalline silicon high-overvoltage protection type pressure sensor is characterized in that: comprises an external connector (10), a positive pressure body (20), a back pressure body (40), a pipe seat (30) and a threaded connector (50);
the external connector (10) is used for connecting a conveying pipeline of the process fluid to be detected, and the positive pressure body (20) is welded with the external connector (10) and used for sensing the pressure of the process fluid to be detected;
the lower end of the positive pressure body (20) is provided with a positive pressure end isolation diaphragm (201), the positive pressure end isolation diaphragm (201) and the positive pressure body (20) are welded through a diaphragm welding ring (202) to form an accommodating space, and a pressure guide medium is filled in the accommodating space;
a back pressure end isolation diaphragm (401) is arranged at the upper end of the back pressure body (40), the back pressure end isolation diaphragm (401) and the back pressure body (40) are welded through a diaphragm welding ring (202) to form an accommodating space, and a pressure guide medium is filled in the accommodating space;
when the positive pressure end isolation diaphragm (201) and the back pressure end isolation diaphragm (401) are under the action of pressure, the containing space can be extruded, and the same pressure is applied to the pressure-conducting medium, so that the pressure transmission is realized;
the pressure sensor comprises a positive pressure body (20), a pipe seat (30) is arranged at the upper end of the positive pressure body (20), a mounting groove is formed in the lower end of the pipe seat (30), a pressure guide medium is filled in a rectangular space between the mounting groove and the upper end of the positive pressure body (20), a binding plate (302) is mounted in the mounting groove, a rectangular hole is formed in the binding plate (302), a sensor chip (301) penetrates through the rectangular hole and is fixed with the mounting groove through glue, the sensor chip (301) is bound and connected with the binding plate (302) through a binding line, the sensor chip (301) is a monocrystalline silicon chip and is provided with a positive pressure end and a back pressure end, the positive pressure;
a positive pressure body channel (203) is arranged on the positive pressure body (20), the upper end of the positive pressure body channel (203) is communicated with a positive pressure end of the sensor chip (301), and the lower end of the positive pressure body channel (203) is communicated with a positive pressure end isolation diaphragm (201);
an electrical interface (305) is arranged on the tube seat (30), and the electrical interface (305) can provide power for the sensor chip (301) and receive an electrical signal transmitted outwards by the sensor chip (301);
the tube seat (30) is provided with a completely isolated positive pressure channel (304) and a back pressure channel (303), one end of the positive pressure channel (304) penetrates through the binding plate (302) and is communicated with a positive pressure end of the sensor chip (301), the other end of the positive pressure channel is communicated with the central protection diaphragm (402), one end of the back pressure channel (303) is communicated with a back pressure end of the sensor chip (301), and the other end of the back pressure channel is communicated with the back pressure end isolation diaphragm (401);
the pipe seat (30) is also provided with a positive pressure cavity cross hole oil duct (307) and a back pressure cavity cross hole oil duct (306), one end of the positive pressure cavity cross hole oil duct (307) is communicated with the positive pressure channel (304), the other end of the positive pressure cavity cross hole oil duct is used as a pressure guide medium filling hole of the positive pressure channel (304), one end of the back pressure cavity cross hole oil duct (306) is communicated with the back pressure channel (303), and the other end of the back pressure cavity cross hole oil duct is used as a pressure guide medium filling hole of;
the central protection diaphragm (402) is arranged between the backpressure body (40) and the tube seat (30), the central protection diaphragm (402) is completely sealed with the backpressure body (40) and the tube seat (30) in a welding mode, and the central protection diaphragm (402) is provided with a through hole;
grooves corresponding in position are formed in the upper end of the pipe seat (30) and the lower end of the backpressure body (40), a sleeve (403) is arranged in each groove, the sleeve (403) penetrates through a through hole of the central protection diaphragm (402), and the other end of the backpressure channel (303) is communicated with the backpressure end isolation diaphragm (401) through the sleeve (403);
the upper end of the positive pressure body (20) is also provided with a threaded connecting piece (50), the threaded connecting piece (50) is provided with a through hole, and the tube seat (30) and the backpressure body (40) are accommodated in the through hole.
2. The monocrystalline silicon high over-voltage protection type pressure sensor according to claim 1, wherein: the positive pressure end isolation diaphragm (201) and the back pressure end isolation diaphragm (401) are respectively wave-shaped, and the lower end face of the positive pressure body (20) and the upper end face of the back pressure body (40) are also wave-shaped.
3. The monocrystalline silicon high over-voltage protection type pressure sensor according to claim 1 or 2, wherein: two sealing rings (404) are arranged outside the sleeve (403), and the sealing rings (404) further ensure the complete isolation of the positive pressure channel (304) and the back pressure channel (303).
4. The monocrystalline silicon high over-voltage protection type pressure sensor according to claim 3, wherein: the sealing ring (404) is an elastic piece made of rubber.
5. The monocrystalline silicon high over-voltage protection type pressure sensor according to claim 1, wherein: the external connector (10) is connected with a conveying pipeline of the process fluid to be detected through external threads.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920789702.0U CN209961389U (en) | 2019-05-29 | 2019-05-29 | Monocrystalline silicon high overvoltage protection type pressure sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920789702.0U CN209961389U (en) | 2019-05-29 | 2019-05-29 | Monocrystalline silicon high overvoltage protection type pressure sensor |
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| Publication Number | Publication Date |
|---|---|
| CN209961389U true CN209961389U (en) | 2020-01-17 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201920789702.0U Expired - Fee Related CN209961389U (en) | 2019-05-29 | 2019-05-29 | Monocrystalline silicon high overvoltage protection type pressure sensor |
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| CN (1) | CN209961389U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111780917A (en) * | 2020-06-08 | 2020-10-16 | 重庆昆仑仪表有限公司 | Absolute pressure gauge |
| CN116296035A (en) * | 2022-12-28 | 2023-06-23 | 西安中星测控有限公司 | MCS absolute pressure and sealing gauge pressure sensor and manufacturing method thereof |
-
2019
- 2019-05-29 CN CN201920789702.0U patent/CN209961389U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111780917A (en) * | 2020-06-08 | 2020-10-16 | 重庆昆仑仪表有限公司 | Absolute pressure gauge |
| CN116296035A (en) * | 2022-12-28 | 2023-06-23 | 西安中星测控有限公司 | MCS absolute pressure and sealing gauge pressure sensor and manufacturing method thereof |
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Granted publication date: 20200117 |