CN209911251U - Defect detecting apparatus - Google Patents

Abstract

The utility model relates to a defect detecting equipment for carry out the defect detection to the base plate that awaits measuring of accomplishing the ruling technology. The base plate that awaits measuring includes substrate base plate and is located back electrode layer on the substrate base plate, equipment includes: a light source assembly for providing illumination, the light source assembly comprising a first light source; the acquisition device is used for acquiring first image data formed by the first light source penetrating through the substrate to be detected when the first light source emits light; and the processing device is connected with the acquisition device and used for analyzing whether the substrate to be detected has defects according to the optical parameters which are reflected by the first image data and correspond to the scribing positions. The technical scheme can detect the substrate which finishes the scribing process so as to ensure the product yield rate flowing into a subsequent production line.

Description

Defect detecting apparatus

Technical Field

The utility model relates to a photovoltaic cell detects technical field, especially relates to a defect detecting equipment.

Background

With the increasing severity of the energy crisis, the development and application of solar energy are very important. Among them, the thin film solar cell has attracted much attention due to its advantages of high photoelectric conversion efficiency, good stability, low manufacturing cost, flexibility, and environmental friendliness.

Taking a copper indium gallium selenide (CuInGaSe, CIGS) thin film solar cell as an example, referring to fig. 1, a typical CIGS thin film solar cell has a structure including: the solar cell comprises a substrate base plate 01 made of nano-calcium glass or flexible materials, a back electrode layer 02 formed on the surface of the substrate base plate 01, such as a molybdenum Mo thin film electrode, a CIGS absorbing layer 03 formed on the surface of the back electrode layer 02, a cadmium sulfide CdS buffer layer 04 formed on the surface of the absorbing layer 03, an intrinsic semiconductor thin film 05 formed on the surface of the buffer layer 04, such as an intrinsic zinc oxide i-Zno thin film, a transparent electrode layer 06, such as a zinc aluminum oxide electrode, and finally a PN node.

Based on this, in the process of forming each functional film layer, a scribing process is required to form different sub-cells and achieve series connection or parallel connection between the sub-cells. The P1 scribing line is implemented by a laser scribing process and can be used for dividing the back electrode layer 02 into a plurality of electrode units, the P2 scribing line is implemented by a mechanical scribing process and can be used for removing the CIGS absorbing layer 03 and the CdS buffer layer 04 which are positioned at a first preset position above the back electrode layer 02 so as to form a channel for series connection between adjacent sub-cells, and the P3 scribing line is implemented by a mechanical scribing process and can be used for removing all film layers including the CIGS absorbing layer 03, the CdS buffer layer 04, the intrinsic semiconductor thin film 05 and the transparent electrode layer 06 which are positioned at a second preset position above the back electrode layer 02 so as to implement series connection between adjacent sub-cells. However, in the actual production process, the over-etching or the under-etching of the P2 scribing line and the P3 scribing line can cause the degradation of the battery performance and the failure of the chip function, so that the detection of the scribing defect is very important for ensuring the battery performance.

SUMMERY OF THE UTILITY MODEL

In order to overcome the problems existing in the related art, the embodiment of the utility model provides a defect detection method and device. The technical scheme is as follows:

according to the utility model discloses an aspect of the embodiment provides a defect detecting method for carry out defect detection to the base plate that awaits measuring of accomplishing the ruling technology, the base plate that awaits measuring includes substrate base plate and is located back electrode layer on the substrate base plate, the method includes:

acquiring first image data formed by a first light source penetrating through the substrate to be detected;

and analyzing whether the substrate to be detected has defects according to the optical parameters corresponding to the scribing positions reflected by the first image data.

In one embodiment, the method further comprises:

collecting second image data of a second light source reflected by the surface where the back electrode layer is located;

and analyzing whether the substrate to be detected has defects according to the optical parameters corresponding to the scribing positions reflected by the first image data and the second image data.

In one embodiment, the first light source and the second light source are respectively disposed on two sides of the substrate to be tested, and the first image data and the second image data are both collected from a side where the first light source is located.

In one embodiment, the method further comprises:

controlling the first light source and the second light source to simultaneously emit light of different colors before acquiring the first image data and the second image data.

In one embodiment, the method further comprises:

and controlling the first light source and the second light source to alternately emit light, acquiring the first image data when the first light source emits light, and acquiring the second image data when the second light source emits light.

In one embodiment, analyzing the substrate to be tested for defects according to the optical parameters corresponding to the scribing positions reflected by the first image data and the second image data comprises:

acquiring a first optical parameter, wherein the first optical parameter comprises first light intensity of the first light source penetrating through the substrate to be detected;

and comparing the first light intensity with a first threshold value, and determining that the substrate to be detected has poor etching when the first light intensity is greater than the first threshold value.

In one embodiment, analyzing the substrate to be tested for defects according to the optical parameters corresponding to the scribing positions reflected by the first image data and the second image data comprises:

acquiring a second optical parameter, wherein the second optical parameter comprises a second light intensity reflected by the surface of the substrate to be measured by the second light source;

and comparing the second light intensity with a second threshold value, and determining that the substrate to be detected has poor missing etching when the second light intensity is smaller than the second threshold value.

In one embodiment, analyzing the substrate to be tested for defects according to the optical parameters corresponding to the scribing positions reflected by the first image data and the second image data comprises:

determining scribing position information according to the first image data and the second image data;

obtaining the scribing position information and the pre-marked reference scribing position information, and detecting the distance between the scribing position and the reference scribing position, wherein the distance is a first distance;

and comparing the first distance with a preset distance, and determining that the precision of the substrate to be detected is poor when the difference value of the first distance and the preset distance exceeds a preset range.

In one embodiment, the method further comprises:

and when the substrate to be detected is determined to have the defects, feeding back the positions and types of the defects to equipment for executing the scribing process.

According to a second aspect of the embodiments of the present invention, there is provided a defect detecting apparatus for performing defect detection on a substrate to be detected after completing a scribing process, the substrate to be detected including a substrate base plate and a back electrode layer located on the substrate base plate; the apparatus comprises:

a light source assembly for providing illumination, the light source assembly comprising a first light source;

the acquisition device is used for acquiring first image data formed by the first light source penetrating through the substrate to be detected when the first light source emits light;

and the processing device is connected with the acquisition device and used for analyzing whether the substrate to be detected has defects according to the optical parameters which are reflected by the first image data and correspond to the scribing positions.

In one embodiment, the light source assembly further includes a second light source, and the first light source and the second light source are respectively disposed at two sides of the substrate to be measured;

the collecting device is positioned on one side of the back electrode layer far away from the substrate base plate;

the acquisition device is further used for acquiring second image data of the second light source reflected by the surface of the back electrode layer when the second light source emits light.

In one embodiment, the apparatus further comprises a control switch connected to the first light source and the second light source for controlling the first light source and the second light source to be turned on and off.

In one embodiment, the first light source and the second light source are light sources of different colors of light.

In one embodiment, the first light source is one of a red light source, a green light source, and a blue light source, and the second light source is another one of a red light source, a green light source, and a blue light source.

In one embodiment, the first light source includes a linear array of light emitting diodes or cold cathode fluorescent lamps, and the second light source includes a linear array of light emitting diodes or cold cathode fluorescent lamps.

In one embodiment, the second light source includes two or more groups of light emitting units, and the collecting device is located between adjacent light emitting units.

In one embodiment, the apparatus further comprises:

and the driving device is used for controlling the substrate to be side to move to a preset position, and the preset position is positioned in the acquisition range of the acquisition device.

In one embodiment, the apparatus further comprises:

and the feedback device is connected with the processing device and the equipment for executing the scribing process and is used for feeding back the position and the type of the defect to the equipment for executing the scribing process.

In one embodiment, the acquisition device is a CCD camera or a CMOS camera.

The embodiment of the utility model provides a technical scheme can include following beneficial effect:

according to the technical scheme, the first image data of the first light source penetrating through the substrate to be tested is obtained, and the defect analysis is carried out on the substrate to be tested according to the optical parameters corresponding to all the scribing positions reflected by the first image data, so that a large number of defective products are avoided in a short time, and the yield of a production line is ensured.

It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the invention as claimed.

Drawings

The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the invention and together with the description, serve to explain the principles of the invention.

FIG. 1 is a schematic diagram of a solar cell structure shown in accordance with an exemplary embodiment;

FIG. 2 is a flow chart of a defect detection method shown in accordance with an exemplary embodiment;

FIG. 3 is a flowchart illustrating a defect detection method according to an exemplary embodiment;

FIG. 4 is a flowchart illustrating a defect detection method according to an exemplary embodiment;

FIG. 5 is a flow diagram of a process for fabricating a solar cell according to an exemplary embodiment;

FIG. 6 is a flowchart illustrating a defect detection method according to an exemplary embodiment;

FIG. 7 is a system block diagram of a defect detection apparatus shown in accordance with an exemplary embodiment;

fig. 8 is a schematic diagram illustrating a structure of a defect detecting apparatus according to an exemplary embodiment.

Detailed Description

Reference will now be made in detail to the exemplary embodiments, examples of which are illustrated in the accompanying drawings. When the following description refers to the accompanying drawings, like numbers in different drawings represent the same or similar elements unless otherwise indicated. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with the present invention. Rather, they are merely examples of apparatus and methods consistent with certain aspects of the invention, as detailed in the appended claims.

The embodiment of the utility model provides a technical scheme relates to a defect detecting method, and this method can be used to carry out the defect detection to the base plate that awaits measuring of accomplishing the ruling technology to judge whether there is the defect in the base plate that awaits measuring. Referring to fig. 1, the specific structure of the substrate to be tested includes a substrate base plate 01, a back electrode layer 02 on the substrate base plate 01, and a functional layer on the back electrode layer 02, where the functional layer may include one or more of an absorption layer 03, a buffer layer 04, an intrinsic semiconductor thin film 05, and a transparent electrode layer 06, but is not limited thereto.

FIG. 2 is a flowchart illustrating a defect detection method according to an exemplary embodiment. As can be seen from fig. 2, the defect detection method includes the following steps:

step S201, collecting first image data formed by a first light source through a substrate to be detected;

step S202, whether the substrate to be tested has defects is analyzed according to the optical parameters which are reflected by the first image data and correspond to the scribing positions.

The substrate to be tested refers to a substrate on which a back electrode layer and a part or all of a functional layer have been formed during the process of manufacturing the solar cell structure, and a corresponding scribing process is performed after the part or all of the functional layer is formed, such as a P2 scribing process or a P3 scribing process in the related art. The scribing position refers to a position of the scribing line after the actual scribing process, such as a P2 scribing position or a P3 scribing position, which is separated from a predetermined reference scribing position by a certain distance.

It should be noted that: in actual defect detection, the first light source may be disposed on one side of the substrate to be detected, where the back electrode layer is disposed, or on one side of the substrate to be detected, where the back electrode layer is not disposed.

Specifically, in the process of defect detection, the substrate to be detected can be placed between the first light source and the collecting device, the first image data of the substrate to be detected, which is transmitted by the first light source, is collected when the first light source is turned on, and the collected first image data is analyzed. If the first optical parameter reflected by the first image data, such as the first light intensity, exceeds a preset first threshold value, the substrate to be detected has the over-etching defect, and thus, the over-etching defect analysis of the substrate to be detected can be realized.

Based on this, the embodiment of the utility model provides a technical scheme sees through the first image data that awaits measuring the base plate through acquireing first light source to optical parameter who corresponds with each ruling position according to this first image data reflection carries out defect analysis to the base plate that awaits measuring, thereby avoids appearing a large amount of defective products in the short time, guarantees to produce the line yield with this.

FIG. 3 is a flowchart illustrating a defect detection method according to an exemplary embodiment. As can be seen from fig. 3, the defect detection method further includes the following steps:

and S301, collecting second image data of the second light source reflected by the surface where the back electrode layer is located.

Step S302, whether the substrate to be tested has defects is analyzed according to the optical parameters corresponding to the scribing positions reflected by the first image data and the second image data.

It should be noted that: when the defect detection is actually performed, the second light source can be arranged on one side of the substrate to be detected, which is provided with the back electrode layer, namely, the second light source and the image acquisition device are arranged on the same side of the substrate to be detected.

Specifically, in the process of defect detection, the substrate to be detected can be placed on the same side of the second light source and the collecting device, and when the second light source is turned on, the second image data of the second light source reflected by the back electrode layer on the surface of the substrate to be detected is collected and analyzed. If a second optical parameter reflected by the second image data, such as a second light intensity, is smaller than a preset second threshold, it indicates that the substrate to be tested has the missing etching defect, so that the missing etching defect analysis of the substrate to be tested can be realized. Furthermore, the embodiment can also determine the scribing precision according to the position of the transmitted light reflected by the first image data and/or the position of the reflected light reflected by the second image data by analyzing the first image data and/or the second image data, thereby realizing the analysis of the precision defect of the substrate to be tested.

Based on the technical scheme that the embodiment of the utility model provides can know, when carrying out the defect detection to the base plate that awaits measuring, it specifically can realize detecting the excessive carving of base plate that awaits measuring, missing the defect of carving and the precision is bad.

In one embodiment, a single light source and two collection devices may be provided to perform the detection functions described above. Specifically, the light source such as the second light source is arranged on one side of the substrate to be detected, which is provided with the back electrode layer, the collecting device comprises a first collecting device and a second collecting device which are respectively arranged on two sides of the substrate to be detected, when the defect detection is carried out, the first collecting device is arranged on one side of the substrate to be detected, which is not provided with the back electrode layer, the second collecting device is arranged on one side of the substrate to be detected, which is provided with the back electrode layer, when the light source is lightened, on the one hand, the first collecting device can be adopted to collect image data of the light source penetrating through the substrate to be detected, on the other hand, the second collecting device can be adopted to collect image data of the light source reflected by the back electrode layer on.

In another embodiment, one collection device and two light sources may be provided to perform the detection function described above. Particularly, the collection system can set up the one side that the base plate that awaits measuring is equipped with the back electrode layer, the light source can be including first light source and the second light source that is located the base plate both sides that await measuring respectively, when carrying out the defect detection, first light source is located the one side that the base plate that awaits measuring does not establish the back electrode layer, the second light source is located the one side that the base plate that awaits measuring is equipped with the back electrode layer, when first light source is lighted, can gather the image data that first light source sees through the base plate that awaits measuring from the second light source place side, when the second light source is lighted, can gather the image data that the second light source reflects via the back electrode layer on base plate. It should be clear that, when the first light source and the second light source are respectively turned on, the image data corresponding to the turned-on different light sources can be respectively collected, and at this time, the collected image data should be image data reflected by the two images respectively, but when the first light source and the second light source are simultaneously turned on, the image data corresponding to the turned-on different light sources can be collected simultaneously, and at this time, the collected image data should be image data reflected by the same image. For the latter, in order to distinguish the image data of the first light source transmitted through the substrate to be tested from the image data of the second light source reflected by the back electrode layer on the surface of the substrate to be tested, the embodiment may adopt the first light source and the second light source for emitting light of different colors, for example, the first light source is a red light source, and the second light source is a blue light source, but not limited thereto.

For example, the first light source and the second light source may be respectively disposed at two sides of the substrate to be tested, and the first image data and the second image data are both collected from a side where the first light source is located, that is, the first light source and the collecting device are located at a side of the substrate to be tested where the back electrode layer is located, and the second light source is located at a side of the substrate to be tested where the back electrode layer is not located. In one embodiment, the first image data is collected when the first light source is illuminated, the second image data is collected when the second light source is illuminated, and the first light source and the second light source may be illuminated alternately to emit light, where the colors of the light emitted by the first light source and the second light source may be the same or different. In another embodiment, the first image data and the second image data may be collected when the first light source and the second light source are simultaneously illuminated, where the first light source and the second light source need to be light sources of different colors. Furthermore, the first image data and the second image data acquired when the first light source and the second light source are simultaneously turned on may also be image data presented in the same image, where the image data may include two image data, one image data reflects image information of the first light source penetrating through the substrate to be measured, and the other image data reflects image information of the second light source reflected by the back electrode layer on the surface of the substrate to be measured.

One of the defect detection methods provided in the present technical solution is exemplarily described below with reference to fig. 4. FIG. 4 is a flowchart illustrating a defect detection method according to an exemplary embodiment. As can be seen from fig. 3, the defect detection method includes the following steps:

step S401, placing the substrate to be tested, which finishes the scribing process, between the first light source and the second light source, wherein the substrate to be tested comprises a substrate, and a back electrode layer and a functional layer which are sequentially located on one side of the substrate.

Step S402, when the first light source and/or the second light source emit light, collecting image data of the substrate to be measured from the side where the first light source is located, wherein the substrate is close to the first light source, and the functional layer is close to the second light source.

Step S403, analyzing whether the substrate to be tested has defects according to the optical parameters corresponding to the scribing positions reflected by the image data, where the optical parameters include a first optical parameter when the first light source transmits through the substrate to be tested and a second optical parameter when the second light source reflects through the back electrode layer on the surface of the substrate to be tested.

Based on the above steps S401 to S403, taking the manufacturing process of the solar cell structure in the related art as an example, assuming that a glass substrate is used as the substrate 01, the back electrode layer 02 such as a Mo electrode, the CIGS absorber layer 03 and the CdS buffer layer 04 are formed on the surface of the substrate 01, and then the substrate is subjected to a P2 scribing process, that is, the CIGS absorber layer 03 and the CdS buffer layer 04 located at a first predetermined position above the back electrode layer 02 are scribed to form a P2 scribe line several tens of micrometers wide, thereby forming a channel for the series connection of the sub-cells. Based on this, the over-etching or the under-etching of the P2 score line can cause the degradation of the cell performance. On one hand, partial omission of the P2 scribe line can lead to degradation of the cell performance, complete omission of the whole P2 scribe line can lead to cell disconnection and chip failure, and on the other hand, over-etching of the P2 scribe line can lead to reduction in the thickness of the back electrode layer 02, so that the conductivity is poor, and the back of the cell assembly can transmit light, thereby generating appearance difference.

In this embodiment, after the P2 scribing process is completed, the substrate to be tested on which the back electrode layer 02, the CIGS absorber layer 03, and the CdS buffer layer 04 are formed may be placed between the first light source and the second light source, such that the substrate 01 of the substrate to be tested is close to the first light source, and the outermost functional layer, such as the CdS buffer layer 04, is close to the second light source. Specifically, the step may be performed by manually placing a small substrate to be tested between two light sources by an operator, or may be performed by placing a large substrate to be tested between two light sources by using a mechanical device, which is not limited herein. Taking the latter as an example, the embodiment may employ a robot to load the substrate to be tested into the supporting mechanism, and control the supporting mechanism to drive the substrate to be tested to move to a position between the first light source and the second light source.

When the first light source and the second light source are sequentially lightened, the monitoring camera can sequentially acquire two pieces of image data of the substrate to be detected from the side direction of the second light source, namely the side direction of the functional layer of the substrate to be detected, wherein the two pieces of image data comprise first image data of the substrate to be detected, which is transmitted by the first light source, when the first light source is lightened and second image data of the substrate to be detected, which is reflected by the back electrode layer on the surface of the substrate to be detected, by the second light source when the second light source is lightened.

When the first light source and the second light source are simultaneously turned on and emit light of different colors, the monitoring camera may collect image data of the substrate to be measured from a side direction of the second light source, i.e., a side direction of the functional layer of the substrate to be measured, where the image data is collected when the first light source and the second light source are simultaneously turned on. Wherein, the monitoring camera can set up directly over the second light source and not sheltered from by the light emitting component of second light source to in the positive image of the base plate that awaits measuring is gathered when the base plate that awaits measuring is located the visual field center of monitoring camera, and at image acquisition's in-process, the base plate that awaits measuring can be static under the monitoring camera, or also can slowly pass through the below of monitoring camera, with do not influence the collection of image as the standard.

After acquiring the image data of the substrate to be tested, the processor may analyze whether the substrate to be tested has a defect according to the optical parameter corresponding to each scribing position, i.e., the P2 scribe line, reflected by the image data, where the defect is over-scribing, under-scribing, or poor precision, and specifically, the defect may be obtained by analyzing a first optical parameter, such as a first light intensity, of the first light source transmitted through the substrate to be tested and a second optical parameter, such as a second light intensity, of the second light source reflected by the back electrode layer on the surface of the substrate to be tested. For example, when the value of the first light intensity is larger than, for example, the first threshold, it indicates that the light intensity of the first light source transmitted through the substrate to be tested is too large, and at this time, the P2 scribing process has an over scribing phenomenon, that is, the over scribing is generated on the back electrode layer 02. For another example, when the value of the second light intensity is smaller than, for example, the second threshold, it indicates that the light intensity reflected by the substrate to be tested by the second light source is too small, and at this time, the P2 scribing process has a missing scribing phenomenon, that is, the scribing process has not yet been performed to the position of the back electrode layer 02. It should be noted that: it is also possible that the second light intensity is less than the second threshold value, that is, the back electrode layer 02 is completely scratched, and at this time, the determination is made by combining the relationship between the first light intensity and the first threshold value. Furthermore, the present embodiment can determine the scribing accuracy according to the position of the transmitted light or the reflected light, thereby determining whether the accuracy is poor.

It should be noted that: the inspection process described in the above embodiment is also applicable to the substrate to be inspected after the P3 scribing process is completed, that is, the substrate after the CIGS absorber 03, the CdS buffer layer 04, the intrinsic semiconductor thin film 05, and the transparent electrode layer 06, which are located above the back electrode layer 02 and correspond to the second predetermined position, are scribed. Poor P3 scribe can also lead to reduced cell performance, for example, a missing scribe of P3 can lead to short between adjacent sub-cells, resulting in reduced chip performance, and an over scribe of P3 can lead to light transmission at the back of the cell assembly, thereby creating differences in appearance. The embodiment can adopt the above-mentioned detection method to detect the substrate to be detected after completing the P3 scribing process, thereby realizing the defect detection function of the substrate to be detected. Fig. 5 schematically shows a flow chart of a manufacturing process of a solar cell structure, and it can be seen that the defect detection method in the present embodiment can be performed after the P2 scribing process and the P3 scribing process are completed.

Based on this, the embodiment of the utility model provides a technical scheme can arrange the base plate that awaits measuring of accomplishing the ruling technology in between first light source and the second light source, when first light source and second light source are luminous simultaneously, gather the image data of the base plate that awaits measuring from the functional layer place side direction of base plate that awaits measuring, perhaps when first light source and second light source are luminous in proper order, gather first image data that the first light source sees through the base plate that awaits measuring and second image data that the second light source reflects via the back electrode layer on base plate surface that awaits measuring from the functional layer side of the base plate that awaits measuring respectively, and then according to the optical parameter that the image data that gathers reflect and each ruling position corresponds carry out defect analysis to the base plate that awaits measuring, thereby avoid appearing a large amount of defective products in the short time, with this ensures to produce.

The single image data can be collected when the first light source and the second light source emit light with different colors at the same time, so that the substrate detection efficiency can be effectively improved. Based on this, referring to fig. 6, the defect detecting method provided by the embodiment of the present invention includes the following steps:

s601, placing a substrate to be tested, which finishes the scribing process, between a first light source and a second light source, wherein the substrate to be tested comprises a substrate, and a back electrode layer and a functional layer which are sequentially positioned on one side of the substrate;

step S602, controlling the first light source and the second light source to emit light with different colors simultaneously;

step S603, collecting image data of a substrate to be detected from the side where a second light source is located, wherein the substrate is close to the first light source, and the functional layer is close to the second light source;

step S604, analyzing whether the substrate to be tested has defects according to optical parameters corresponding to the scribing positions reflected by the image data, wherein the optical parameters comprise a first optical parameter of the first light source transmitting the substrate to be tested and a second optical parameter of the second light source reflecting through the back electrode layer on the surface of the substrate to be tested.

The light emitted by the first light source may be one of red light, green light and blue light, and the light emitted by the second light source may be another one of red light, green light and blue light, but not limited thereto, as long as the light emitting colors of the two light sources are different, and the others are not particularly limited.

Therefore, the first light source and the second light source can be distinguished according to the color data in the image data. Taking the example that the first light source emits red light and the second light source emits blue light, when the etching process is over-etched, the substrate to be tested generates light leakage, at the moment, the red light intensity of the first light source penetrating through the substrate to be tested is strong, so the red data in the image data is relatively obvious, when the etching process is over-etched, the back electrode layer 02 on the substrate to be tested is not etched yet, at the moment, the blue light intensity of the second light source reflected by the substrate to be tested is weak, so the blue data in the image data is relatively weak. Therefore, in the embodiment, whether the substrate to be detected has the defect or not can be determined according to the light intensity information reflected by the image data, the type of the defect can be further judged according to the light intensity information of different colors, and the scribing position can be calculated according to the position information of the transmission light and the reflection light, so that the judgment of the scribing precision is realized.

In this embodiment, analyzing whether the substrate to be tested has defects according to the optical parameters corresponding to the scribing positions reflected by the image data may include: acquiring a first optical parameter, wherein the first optical parameter comprises first light intensity of a first light source penetrating through a substrate to be detected; and comparing the first light intensity with a first threshold value, and determining that the substrate to be detected has poor etching when the first light intensity is greater than the first threshold value. Wherein the first threshold value may be determined according to the influence of the scratch defect on the performance of the battery.

In this embodiment, analyzing whether the substrate to be tested has defects according to the optical parameters corresponding to the scribing positions reflected by the image data may include: acquiring a second optical parameter, wherein the second optical parameter comprises a second light intensity reflected by the surface of the substrate to be measured by the second light source; and comparing the second light intensity with a second threshold value, and determining that the substrate to be detected has poor etching omission when the second light intensity is smaller than the second threshold value. Wherein the second threshold value may be determined according to the influence of the scratch defect on the performance of the battery.

In this embodiment, analyzing whether the substrate to be tested has defects according to the optical parameters corresponding to the scribing positions reflected by the image data may further include: determining scribing position information according to the first image data and the second image data; obtaining scribing position information and pre-marked reference scribing position information, and detecting the distance between the scribing position and the reference scribing position, wherein the distance is a first distance; and comparing the first distance with a preset distance, and determining that the precision of the substrate to be detected is poor when the difference value of the first distance and the preset distance exceeds a preset range. The reference scribing position may be a P1 scribing position, and in this embodiment, the camera may be specifically used to capture an image of the substrate to be tested from a side of the substrate to be tested away from the back electrode layer, and an image recognition algorithm is used to obtain a trajectory of the P1 scribing line in the image, so as to determine the scribing position. The distance between the P2 scribe line or the P3 scribe line and the P1 scribe line should be a predetermined distance, but there may be a deviation in the actual scribing process, so this embodiment can determine whether there is a poor precision on the substrate to be tested by performing recognition analysis on the image data to obtain the position of the scribe position, such as the P2 scribe line or the P3 scribe line, and comparing the first distance between the scribe position and the reference scribe position with the predetermined distance to determine whether the difference between the two is within a predetermined range. Of course, the predetermined range may be set according to the influence of the scratch defect on the performance of the battery.

Based on the process, the defect detection of the substrate to be detected can be realized. Since the defect of the product is caused by the problem of the equipment, that is, the equipment performing the scribing process has a problem during the production operation, which can cause the above product failure, the embodiment can also feed back the problem of the product to the equipment performing the scribing process, so as to troubleshoot the equipment. Based on this, the defect detecting method provided by the embodiment of the present invention can further include the following steps: and when the existence of the defects of the substrate to be detected is determined, feeding back the positions and types of the defects to equipment for executing the scribing process. The poor over-etching of the substrate to be tested indicates that the equipment for performing the etching process has the problem of the abrasion of the etching needle or the too high pressure, the poor over-etching of the substrate to be tested indicates that the equipment for performing the etching process has the problem of the too low pressure of the etching needle, and the poor precision of the substrate to be tested indicates that the parts in the equipment for performing the etching process have the problem of thermal expansion. Therefore, the defect position and type of the substrate to be tested are fed back to the equipment for executing the scribing process, so that the problem of equipment is reversely deduced according to the defect type and the occurrence part of the product, the equipment can be calibrated or maintained in time, a large amount of defective products can be prevented from flowing into the subsequent process, and the yield of a production line is improved.

Considering that the surface of the substrate to be measured is usually a whole-surface scribed line, in order to ensure the brightness uniformity during image acquisition, the first Light source and the second Light source may be both arranged as a linear Light source, for example, CCFL (Cold Cathode fluorescent lamp) or LED (Light Emitting Diode) array arranged in a linear manner is used to provide Light sources of corresponding colors.

Based on the above, it should be noted that: the utility model discloses the defect detection method that technical scheme provided not only can be applied to the base plate that solar cell preparation in-process accomplished the ruling technology and detect, but also can be applied to other covers and have metal level and stratum lucidum and accomplish the base plate detection of ruling technology, as long as carry out the defect detection's principle the same with above-mentioned embodiment.

The embodiment of the utility model provides a technical scheme relates to a defect detecting equipment, and this equipment can be used to detect the base plate that awaits measuring of accomplishing the ruling technology to whether there is the defect in the base plate that judges to await measuring. Referring to fig. 1, the substrate to be tested includes a substrate base plate 01, a back electrode layer 02 located on the substrate base plate 01, and a functional layer located on the back electrode layer 02, where the functional layer may include one or more of an absorption layer 03, a buffer layer 04, an intrinsic semiconductor thin film 05, and a transparent electrode layer 06, but is not limited thereto. Referring to fig. 7, the defect detecting apparatus includes a light source device 501, a collecting device 502 and a processing device 503. The light source device 501 is used for providing illumination, and the light source device 501 includes a first light source; the collecting device 502 can be used for collecting first image data formed by the first light source penetrating through the substrate to be tested when the first light source emits light; the processing device 503 may be connected to the collecting device 502 for analyzing whether the substrate to be tested has defects according to the optical parameters corresponding to the scribing positions reflected by the first image data.

Based on this, the embodiment of the utility model provides a technical scheme sees through the first image data that awaits measuring the base plate through acquireing first light source to optical parameter who corresponds with each ruling position according to this first image data reflection carries out defect analysis to the base plate that awaits measuring, thereby avoids appearing a large amount of defective products in the short time, guarantees to produce the line yield with this.

In an implementation, light source device 501 can set up the one side that is equipped with the back electrode layer at the base plate that awaits measuring, collection system 502 can be including relative first acquisition unit and the second acquisition unit that sets up, when carrying out the defect detection, first acquisition unit is located the one side that the base plate that awaits measuring did not establish the back electrode layer, the second acquisition unit is located the one side that the base plate that awaits measuring was equipped with the back electrode layer, when light source device 501 lighted, on the one hand can adopt first acquisition unit to gather the image data that the light source sees through the base plate that awaits measuring, on the other hand can adopt the second acquisition unit to gather the image data that the light source is through the back electrode layer reflection on base plate surface that awaits measuring, so alright realize the excessive carving analysis.

In another embodiment, the light source device 501 may include a first light source and a second light source which are oppositely disposed, the collecting device 502 may be disposed on one side of the substrate to be tested, where the back electrode layer is disposed, that is, one side of the substrate to be tested, where the back electrode layer is away from the substrate, when defect detection is performed, the first light source is located on one side of the substrate to be tested, where the back electrode layer is not disposed, the second light source is located on one side of the substrate to be tested, when the first light source is turned on, the collecting device 502 may collect image data of the first light source penetrating through the substrate to be tested from the side where the second light source is located, and when the second light source is turned on, the collecting device 502 may also collect image data of the second light source reflected by the back electrode layer.

Fig. 8 is a schematic diagram illustrating a structure of one of the defect detecting apparatuses. Specifically, the light source device 501 includes a first light source 5011 and a second light source 5012 which are oppositely disposed, the collecting device 502 is disposed at the side of the second light source 5012 and is configured to collect image data of the substrate to be tested, and the processing device 503 is connected to the collecting device 502 and is configured to perform defect analysis according to the image data. When the defect detection is performed on the substrate to be detected, the substrate to be detected is located between the first light source 5011 and the second light source 5012, the substrate 01 is close to the first light source 5011, the functional layer is close to the second light source 5012, the acquisition device 502 can acquire image data of the substrate to be detected when the first light source 5011 and/or the second light source 5012 emit light, the processing device 503, namely the processor, can acquire the image data and analyze whether the substrate to be detected has defects according to optical parameters corresponding to various scribing positions reflected by the image data, wherein the optical parameters include a first optical parameter of light emitted by the first light source 5011 and transmitted through the substrate to be detected, and/or a second optical parameter of light emitted by the second light source 5012 and reflected by a back electrode layer on the surface of the substrate to be detected.

Based on this, the embodiment of the utility model provides a technical scheme can arrange the base plate that awaits measuring of accomplishing the ruling technology in between first light source and the second light source, when first light source and second light source are luminous simultaneously, gather the image data of the base plate that awaits measuring from the functional layer place side direction of the base plate that awaits measuring, perhaps when first light source and second light source are luminous in turn, gather the image data that first light source sees through the base plate that awaits measuring and the image data that the second light source is via the back electrode layer reflection on base plate surface that awaits measuring from the functional layer side of the base plate that awaits measuring respectively, and then according to the optical parameter that the image data that gathers reflect and each ruling position correspond to carry out the defect analysis to the base plate that awaits measuring, thereby avoid appearing a large amount of bad products in the short time.

In this embodiment, the defect detecting apparatus may further include a switching element, which may be connected to the first light source 5011 and the second light source 5012, respectively, for controlling the first light source 5011 and the second light source 5012 to be turned on and off. Among them, the switching element may be one, which can synchronously control the switching of the first light source 5011 and the second light source 5012; of course, two switching elements may be provided, which control the switching of the first and second light sources 5011 and 5012, respectively. For example, the switch element may communicate with a main switch of the defect detecting apparatus, and when the main switch of the defect detecting apparatus is activated, the switch element may be automatically turned on to control the first light source 5011 and the second light source 5012 to emit light. When the first light source 5011 and the second light source 5012 are independently controlled by two switching elements, the two switching elements may be turned on simultaneously, but may also be turned on alternately according to a preset frequency, where the preset frequency may be set to a frequency that cannot be recognized by human eyes, so as to implement automatic switching of light sources in an actual detection process.

In consideration of the fact that only a single piece of image data can be collected when the first light source and the second light source emit light of different colors at the same time, the substrate detection efficiency can be effectively improved, and therefore the first light source 5011 and the second light source 5012 in this embodiment can select light source assemblies emitting light of different colors. The first light source 5011 may be one of a red light source, a green light source, and a blue light source, and the second light source 5012 may be another one of a red light source, a green light source, and a blue light source, but not limited thereto, as long as the light emitting colors of the two light source assemblies are different, and the others are not particularly limited.

In consideration of the fact that the surface of the substrate to be measured is generally a whole-surface scribed line, in order to ensure the brightness uniformity in the image acquisition process, the first light sources 5011 may employ linearly arranged LED arrays or CCFLs, and the second light sources 5012 may also employ linearly arranged LED arrays or CCFLs.

The application of the defect detection device is exemplarily described below with reference to specific embodiments. Referring to fig. 8, the defect inspection apparatus may include a supporting Device for loading a substrate to be inspected, a driving Device connected to the supporting Device, a light source Device 501 composed of a first light source 5011 and a second light source 5012 which are oppositely disposed, a CCD (Charge-coupled Device) camera or a CMOS (Complementary Metal oxide semiconductor) camera serving as an acquisition Device 502, and a processing Device 503, i.e., a processor. When the defect detection is performed on the substrate to be detected, the substrate to be detected can be fixed in the supporting device, the supporting device is controlled by the driving device to drive the substrate to be detected to move to a preset position between the first light source 5011 and the second light source 5012, the preset position is located in an acquisition range of the acquisition device 502, namely a field of view range of the camera, the second light source 5012 comprises two or more groups of light emitting units, the acquisition device 502 is correspondingly arranged between adjacent light emitting units, image data of the substrate to be detected is acquired when the first light source 5011 and/or the second light source 5012 emit light, the processing device 503, namely a processor, can perform defect analysis on the substrate to be detected according to the image data, and the specific analysis process is as follows:

acquiring a first optical parameter, wherein the first optical parameter comprises a first light intensity of the first light source 5011 penetrating through the substrate to be tested; and comparing the first light intensity with a first threshold value, and determining that the substrate to be detected has poor etching when the first light intensity is greater than the first threshold value. Wherein the first threshold value may be determined according to the influence of the scratch defect on the performance of the battery.

Acquiring a second optical parameter, wherein the second optical parameter comprises a second light intensity reflected by the second light source 5012 through the surface of the substrate to be tested; and comparing the second light intensity with a second threshold value, and determining that the substrate to be detected has poor etching omission when the second light intensity is smaller than the second threshold value. Wherein the second threshold value may be determined according to the influence of the scratch defect on the performance of the battery.

Determining scribing position information according to the first image data and the second image data; obtaining scribing position information and pre-marked reference scribing position information, and detecting the distance between the scribing position and the reference scribing position, wherein the distance is a first distance; and comparing the first distance with a preset distance, and determining that the precision of the substrate to be detected is poor when the difference value of the first distance and the preset distance exceeds a preset range. The predetermined range may be set according to the effect of the scratch defect on the performance of the battery.

Based on the defect detection equipment process, the defect detection of the substrate to be detected can be realized. Since the defect of the product is caused by the problem of the equipment, that is, the defect of the equipment performing the scribing process occurs in the process of the production operation, which leads to the above product failure, the embodiment can also feed back the problem of the product to the equipment performing the scribing process, so as to conveniently troubleshoot the equipment. Based on this, the defect detecting apparatus provided by the embodiments of the present invention may further include a feedback device, which may be connected to the apparatus for performing the scribing process, for feeding back the position and type of the defect to the apparatus for performing the scribing process when it is determined that the substrate to be tested has the defect. Therefore, the defect position and type of the substrate to be tested are fed back to the equipment for executing the scribing process, so that the problem of equipment is reversely solved according to the defect type and the occurrence part of the product, the equipment can be calibrated or maintained in time, a large amount of defective products can be prevented from flowing into the subsequent process, and the yield of a production line is improved.

It should be noted that: the specific implementation of the defect detection apparatus has been described in detail in the defect detection method, and will not be elaborated herein.

Other embodiments of the invention will be apparent to those skilled in the art from consideration of the specification and practice of the disclosure disclosed herein. This application is intended to cover any variations, uses, or adaptations of the invention following, in general, the principles of the invention and including such departures from the present disclosure as come within known or customary practice within the art to which the invention pertains. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the invention being indicated by the following claims.

It will be understood that the invention is not limited to the precise arrangements described above and shown in the drawings and that various modifications and changes may be made without departing from the scope thereof. The scope of the present invention is limited only by the appended claims.

Claims (10)

1. A defect detection device is used for detecting defects of a substrate to be detected after a scribing process is finished, and is characterized in that the substrate to be detected comprises a substrate and a back electrode layer positioned on the substrate; the apparatus comprises:

a light source assembly for providing illumination, the light source assembly comprising a first light source;

the acquisition device is used for acquiring first image data formed by the first light source penetrating through the substrate to be detected when the first light source emits light;

and the processing device is connected with the acquisition device and used for analyzing whether the substrate to be detected has defects according to the optical parameters which are reflected by the first image data and correspond to the scribing positions.

2. The apparatus of claim 1, wherein the light source assembly further comprises a second light source, and the first light source and the second light source are respectively disposed at two sides of the substrate to be tested;

the collecting device is positioned on one side of the back electrode layer far away from the substrate base plate;

the acquisition device is further used for acquiring second image data of the second light source reflected by the surface of the back electrode layer when the second light source emits light.

3. The apparatus of claim 2, further comprising a control switch coupled to the first and second light sources for controlling the turning on and off of the first and second light sources.

4. The apparatus of claim 2, wherein the first light source and the second light source are light sources of different colors of light.

5. The apparatus of claim 2, wherein the first light source is one of a red light source, a green light source, and a blue light source, and the second light source is another of the red light source, the green light source, and the blue light source.

6. The apparatus of claim 2, wherein the first light source comprises a linear array of light emitting diodes or cold cathode fluorescent tubes and the second light source comprises a linear array of light emitting diodes or cold cathode fluorescent tubes.

7. The apparatus of claim 2, wherein the second light source comprises two or more groups of light emitting units, and the collecting means is located between adjacent light emitting units.

8. The apparatus of claim 1, further comprising:

and the driving device is used for controlling the substrate to be detected to move to a preset position, and the preset position is located in the acquisition range of the acquisition device.

9. The apparatus of claim 1, further comprising:

and the feedback device is connected with the processing device and the equipment for executing the scribing process and is used for feeding back the position and the type of the defect to the equipment for executing the scribing process.

10. The apparatus of claim 1, wherein the acquisition device is a CCD camera or a CMOS camera.

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