CN209822474U - Chip tantalum capacitor and anode tantalum block thereof - Google Patents
Chip tantalum capacitor and anode tantalum block thereof Download PDFInfo
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- CN209822474U CN209822474U CN201920569770.6U CN201920569770U CN209822474U CN 209822474 U CN209822474 U CN 209822474U CN 201920569770 U CN201920569770 U CN 201920569770U CN 209822474 U CN209822474 U CN 209822474U
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Abstract
The utility model provides a piece formula tantalum electric capacity and positive pole tantalum piece thereof, including tantalum piece body, tantalum wire and at least one slit, tantalum piece body is the cuboid, is provided with the chamfer on the edge of tantalum piece body, and tantalum wire sets up this internal and drawn forth by tantalum piece body top surface at tantalum piece, and a side of tantalum piece body is followed to the slit inwards extended, and the slit depth is less than the perpendicular distance of tantalum wire to tantalum piece body side, and the slit height is less than or equal to tantalum piece body height, and the slit width is less than the edge length of tantalum piece body place side. The utility model also provides a piece formula tantalum capacitor. The utility model discloses the permeability of the great large-size positive pole tantalum piece when effectively improving the negative pole tunica improves its negative pole capacity extraction rate, improves the reliability of great shell number piece formula tantalum electric capacity, and effectively improves the fracture phenomenon that epoxy sealed.
Description
Technical Field
The utility model relates to a piece formula tantalum electric capacity and positive pole tantalum piece thereof.
Background
Chip solid electrolyte tantalum fixed capacitors (hereinafter referred to as tantalum capacitors) have been widely used in various military and civil electronic products due to their advantages of large specific capacity, small leakage current, high reliability, convenience for automatic mounting, and the like. From the manufacturing process, the cathode coating process plays a role in determining the performance and reliability of the product. In recent years, the demand of military market for tantalum capacitors is continuously developing towards high voltage and large capacity, the size of the tantalum capacitors is increased, but in the larger shell tantalum capacitors, due to the larger size of the anode tantalum block, solution is not easy to permeate into the anode tantalum block in the cathode coating process, the cathode layer capacity extraction rate is low, the cathode layer quality is poor, so that the ESR, loss and leakage current indexes of products are larger, the capacity change after high and low temperature and moisture resistance is large, and the reliability of surge, service life and the like is reduced. This is particularly true in the case of chip-type solid electrolyte tantalum-fixed capacitors. In order to overcome the difficulty, the large-shell tantalum capacitor is generally designed into a multi-core structure, namely, a plurality of small-size anode tantalum blocks are respectively subjected to cathode coating, and then the small-size anode tantalum blocks are bonded in parallel to form a large-size anode tantalum block. Although the tantalum capacitor with the multi-core structure can improve the permeation problem of large-shell products, the design and process reliability of the products is reduced due to the fact that a plurality of tantalum cores are connected in parallel, and the manufacturing process is complex and inconvenient for automatic production. On the other hand, when the existing tantalum capacitor is encapsulated by epoxy resin, cracking is easy to occur, and the product is unqualified.
SUMMERY OF THE UTILITY MODEL
The utility model aims at prior art not enough, provide a piece formula tantalum electric capacity and positive pole tantalum piece thereof, effectively improve the permeability of the positive pole tantalum piece of great size when the negative pole tunica, improve its negative pole capacity and draw forth the rate, improve the reliability of great shell number piece formula tantalum electric capacity, and effectively improve the fracture phenomenon that epoxy sealed.
The utility model discloses a following technical scheme realizes:
the utility model provides an anode tantalum piece of chip tantalum electric capacity, includes tantalum piece body, tantalum wire and at least one slit, and tantalum piece body is the cuboid, is provided with the chamfer on the edge of tantalum piece body, and the tantalum wire setting is drawn forth at tantalum piece body internal and by tantalum piece body top surface at tantalum piece, and a side of tantalum piece body is inwards extended along the slit, and the slit depth is less than the perpendicular distance of tantalum wire to tantalum piece body side, and the slit height is less than or equal to tantalum piece body height, and the slit width is less than the edge length of tantalum piece body place side.
Further, the depth of the slit is 20% -90% of the vertical distance from the tantalum wire to the side face of the tantalum block body, the height of the slit is 20% -100% of the height of the tantalum block body, and the width of the slit is 5% -50% of the length of the edge of the side face where the tantalum block body is located.
Furthermore, the two opposite side surfaces of the tantalum block body are provided with the slits, and the two slits are symmetrically arranged by taking the tantalum wire as a symmetry axis.
Further, the depth of the slit is 40% -90% of the vertical distance from the tantalum wire to the side face of the tantalum block body, the height of the slit is 40% -70% of the height of the tantalum block body, and the width of the slit is 5% -20% of the length of the edge of the side face where the tantalum block body is located.
Further, the chamfer is arranged on the high edge of the tantalum block body.
Furthermore, the chamfer is a round chamfer with the radius of 0.1mm-0.75 mm.
Furthermore, the radius of the round chamfer is 0.2mm-0.5 mm.
Furthermore, the two slits are respectively arranged on two side faces of the tantalum block body with smaller area.
Furthermore, the height of the tantalum block body is 1-10mm, the length of the long edge is 1-10mm, and the length of the wide edge is 1-6 mm.
The utility model discloses still realize through following technical scheme:
a chip tantalum capacitor comprises the anode tantalum block.
The utility model has the following beneficial effects:
the utility model discloses a be provided with the chamfer on the high edge of tantalum piece body, can effectively improve the piece formula solid electrolyte tantalum electric capacity fracture phenomenon that epoxy enveloped, guarantee the quality of piece formula tantalum electric capacity, the setting of slit can effectively improve the infiltration nature of bigger size positive pole tantalum piece in the negative pole tunica adventitia, improve its negative pole capacity extraction rate, improve the high low temperature and the moisture-proof characteristic of piece formula tantalum electric capacity, reduce ESR and the loss of product, improve the reliability of piece formula tantalum electric capacity, simplify the manufacture process, solve the problem that big shell number piece formula tantalum electric capacity is difficult to automated production; the slit sets up on the less side of area, draws forth at the great side of area because of piece formula tantalum capacitor usually, so set up the slit and can guarantee to have sufficient area of drawing forth, guarantee the lower ESR of product.
Drawings
The present invention will be described in further detail with reference to the accompanying drawings.
Fig. 1 is a schematic structural diagram of an anode tantalum block of the present invention.
Fig. 2 is a schematic top view of the structure of fig. 1.
Fig. 3 is a schematic front view of the structure of fig. 1.
Fig. 4 is a side view of the structure of fig. 1.
Wherein, 1, tantalum block body; 11. a wide edge; 12. a long edge; 2. tantalum wire; 3. chamfering; 4. a slit.
Detailed Description
The chip tantalum capacitor comprises an anode tantalum block shown in figures 1 to 4, wherein the anode tantalum block comprises a tantalum block body 1, a tantalum wire 2 and a slit 4, the tantalum block body 1 is a cuboid, a chamfer 3 is arranged on an edge of the tantalum block body 1, the lower portion of the tantalum wire 2 is arranged in the tantalum block body 1, the upper portion of the tantalum wire is led out from the top surface of the tantalum block body 1, the leading-out point of the tantalum wire 2 is located in the center of the top surface of the tantalum block body 1, the slit 4 extends inwards along one side surface of the tantalum block body 1, the depth of the slit 4 is smaller than the vertical distance from the tantalum wire 2 to the side surface of the tantalum block body 1, the height of the slit 4 is smaller than or equal to the height of the tantalum block body 1, and. The number of the slits 4 can be one to four, in the embodiment, two slits 4 are provided, the two slits 4 are respectively provided on two sides of the tantalum block body 1 and are symmetrically arranged by taking the tantalum wire 2 as a symmetry axis, more specifically, the two slits 4 are respectively provided on two sides of the tantalum block body 1 with a smaller area, and the width of the slit 4 is smaller than the length of the wide edge 11 of the tantalum block body 1.
The height of the tantalum block body 1 is 1-10mm, the length of the long edge 12 is 1-10mm, and the length of the wide edge 11 is 1-6 mm. The depth of the slit 4 is 20% -90%, preferably 40% -90% of the vertical distance from the tantalum wire 2 to the side face of the tantalum block body 1; the height of the slit 4 is 20-100%, preferably 40-70% of the height of the tantalum block body 1; the width of the slit 4 is 5-50%, preferably 5-20% of the length of the wide edge 11 of the tantalum block body 1.
The chamfer 3 is a round chamfer, the round chamfer is arranged on each of the four high edges of the tantalum block body 1, and the radius of the round chamfer is 0.1-0.75 mm, preferably 0.2-0.5 mm.
In the embodiment, the height of the tantalum block body 1 is 5.0mm, the length of the long edge 12 is 3.3mm, and the length of the wide edge 11 is 3.0 mm; the radius of the round chamfer is 0.2 mm; the depth of the slit 4 is 1.0mm, which is 60.7% of the vertical distance from the tantalum wire 2 to the side surface of the tantalum block body 1, the height of the slit 4 is 2.8mm, which is 56% of the height of the tantalum block body 1, and the width of the slit 4 is 0.2mm, which is 6.7% of the distance from the wide edge 11 of the tantalum block body 1.
Table 1 shows the comparison between the performance of the a batch of chip tantalum capacitors produced by using the anode tantalum blocks of the parameters in this embodiment and the performance of the B batch of chip tantalum capacitors produced by using the common tantalum blocks, wherein the key parameters in the manufacturing process are as follows: the specific volume of tantalum powder is 23000 mu F.V/g, the pressed density is 6.5g/cm3, the sintering temperature is 1465 ℃, the energizing voltage is 65V, and the design and the process are completely consistent. As can be seen from the data in Table 1, the chip tantalum capacitor produced by using the anode tantalum block with various parameters in the embodiment can actually reduce the ESR of the product, improve the cathode capacity extraction rate, and play an important role in improving the high-low temperature characteristics and the moisture resistance characteristics of the chip tantalum capacitor.
TABLE 1
The above description is only a preferred embodiment of the present invention, and therefore the scope of the present invention should not be limited thereby, and all equivalent changes and modifications made within the scope of the claims and the specification should be considered within the scope of the present invention.
Claims (10)
1. An anode tantalum block of a chip tantalum capacitor is characterized in that: the device comprises a tantalum block body, a tantalum wire and at least one slit, wherein the tantalum block body is a cuboid, a chamfer is arranged on an edge of the tantalum block body, the tantalum wire is arranged in the tantalum block body and is led out from the top surface of the tantalum block body, the slit extends inwards along one side surface of the tantalum block body, the depth of the slit is smaller than the vertical distance from the tantalum wire to the side surface of the tantalum block body, the height of the slit is smaller than or equal to the height of the tantalum block body, and the width of the slit is smaller than the length of the edge on the side surface where the.
2. The anode tantalum block of the chip tantalum capacitor as claimed in claim 1, wherein: the slit depth is 20% -90% of the vertical distance from the tantalum wire to the side face of the tantalum block body, the slit height is 20% -100% of the height of the tantalum block body, and the slit width is 5% -50% of the edge length of the side face where the tantalum block body is located.
3. The anode tantalum block of the chip tantalum capacitor as claimed in claim 1, wherein: the two opposite side surfaces of the tantalum block body are provided with the slits, and the two slits are symmetrically arranged by taking the tantalum wire as a symmetry axis.
4. The anode tantalum block of the chip tantalum capacitor as claimed in claim 2, wherein: the slit depth is 40% -90% of the vertical distance from the tantalum wire to the side face of the tantalum block body, the slit height is 40% -70% of the height of the tantalum block body, and the slit width is 5% -20% of the edge length of the side face where the tantalum block body is located.
5. The anode tantalum block of the chip tantalum capacitor as claimed in claim 1, 2, 3 or 4, wherein: the chamfer is arranged on the high edge of the tantalum block body.
6. The anode tantalum block of the chip tantalum capacitor as claimed in claim 1, 2, 3 or 4, wherein: the chamfer is a round chamfer with the radius of 0.1mm-0.75 mm.
7. The anode tantalum block of the chip tantalum capacitor as claimed in claim 6, wherein: the radius of the round chamfer is 0.2mm-0.5 mm.
8. The anode tantalum block of the chip tantalum capacitor as claimed in claim 3, wherein: the two slits are respectively arranged on the two side faces of the tantalum block body with smaller area.
9. The anode tantalum block of the chip tantalum capacitor as claimed in claim 1, 2, 3 or 4, wherein: the height of the tantalum block body is 1-10mm, the length of the long edge is 1-10mm, and the length of the wide edge is 1-6 mm.
10. A chip tantalum capacitor is characterized in that: comprising an anode tantalum block as claimed in any one of claims 1 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920569770.6U CN209822474U (en) | 2019-04-24 | 2019-04-24 | Chip tantalum capacitor and anode tantalum block thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920569770.6U CN209822474U (en) | 2019-04-24 | 2019-04-24 | Chip tantalum capacitor and anode tantalum block thereof |
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| Publication Number | Publication Date |
|---|---|
| CN209822474U true CN209822474U (en) | 2019-12-20 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201920569770.6U Active CN209822474U (en) | 2019-04-24 | 2019-04-24 | Chip tantalum capacitor and anode tantalum block thereof |
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|---|---|
| CN (1) | CN209822474U (en) |
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- 2019-04-24 CN CN201920569770.6U patent/CN209822474U/en active Active
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