CN209729870U - Base plate processing system - Google Patents

Abstract

The utility model provides a kind of base plate processing system, predetermined processing is carried out to the substrate for being formed with film processed, and film processed on the substrate forms defined pattern, comprising: measuring device, coating development processing apparatus, downstream side and the control device of above-mentioned coating development processing apparatus is arranged in its downstream side that above-mentioned measuring device is arranged in, etching process device.

Description

Base plate processing system

Technical field

The utility model relates to a kind of base plate processing systems, carry out defined processing to the substrate for being formed with film processed, Film processed on the substrate forms defined pattern.

Background technique

Such as in the processing procedure of semiconductor device, photoetching treatment is carried out, and forms defined photoetching agent pattern on wafer, The photoetching treatment sequentially carries out: photoresist coating processing applies photoetching on such as semiconductor crystal wafer (hereinafter referred to as " wafer ") Glue forms photoresist film；Exposure-processed, in the photoresist film, by defined pattern exposure；And development treatment, it will be exposed The photoresist film of light is developed.Using the photoetching agent pattern as mask, the film processed such as SiO2 film on wafer is carried out On polysilicon (Poly-Si) film etching process, then carry out photoresist film removal processing etc., and film processed formed advise Fixed pattern.

Above-mentioned photoetching agent pattern is the pattern form for determining the film processed of substrate, needs to be formed with stringent size.Cause This, proposes following technology: for example initially carry out photoetching treatment on the wafer of inspection, and the shape on the film processed of wafer At photoetching agent pattern, and measure the line width equidimension of the photoetching agent pattern.Later, it is based on its dimension measurement result, is corrected to crystalline substance The various treatment conditions for the photoetching treatment that circle carries out, and realize appropriateization (patent document 1) of the size of photoetching agent pattern.

Patent document 1: Japanese Unexamined Patent Publication 2006-228816 bulletin

Utility model content

However, only having shadow to the pattern dimension for being formed by film processed after etching process when such as continuous processing wafer Loud parameter generates ongoing change sometimes.At this point, as described above can be appropriate by the photoetching agent pattern after photoetching treatment Change, it is also difficult to the pattern of film processed be made to be formed as predetermined size by each wafer.

The utility model is completed in view of the above problems, and its object is to form the pattern of film processed by each substrate For predetermined size.

In order to achieve the above objectives, in the viewpoint of the utility model, provide a kind of base plate processing system, to be formed with by The substrate of process film carries out predetermined processing, and above-mentioned film processed on the substrate forms defined pattern comprising: measurement Device, the suction to the film thickness, the refractive index, above-mentioned film processed of above-mentioned film processed of the above-mentioned film processed on aforesaid substrate It receives any of coefficient or the amount of warpage of aforesaid substrate to measure, as the primary condition of aforesaid substrate；Coating development The downstream side of above-mentioned measuring device is arranged in processing unit, and after above-mentioned measuring device measures above-mentioned primary condition, to upper It states substrate and carries out photoetching treatment, to form photoetching agent pattern on the film processed of the substrate；Etching process device, setting exist The downstream side of above-mentioned coating development processing apparatus, and using above-mentioned photoetching agent pattern as mask, above-mentioned film processed is etched into Defined above-mentioned pattern；And control device, above-mentioned measuring device, above-mentioned coating development processing apparatus and above-mentioned are controlled respectively Etching process device, and the processing of the first relationship and predetermined processing of the pattern dimension with primary condition and film processed Second relationship of the above-mentioned pattern dimension of condition and film processed, above-mentioned control device are configured to carry out control as follows: based on upper The measurement result for stating the above-mentioned primary condition in measuring device is located above-mentioned after etching process according to above-mentioned first relationship The above-mentioned pattern dimension of reason film is estimated；Based on the presumption result of above-mentioned pattern dimension, according to above-mentioned second relationship, to above-mentioned The above-mentioned treatment conditions of predetermined processing in photoetching treatment or etching process are modified.

The researchs such as inventor are learnt, by substrate continuous processing, can not make when the film processed of each substrate forms pattern The reason of pattern of film processed is formed as predetermined size by each substrate is: the film thickness of the film processed before predetermined processing, Or the refractive index (hereinafter referred to as " n value ") and the absorption coefficient (hereinafter referred to as " k value ") of light or the amount of warpage of substrate of light generate Ongoing change.Therefore, according to the utility model, firstly, since to the film thickness of the film processed before predetermined processing, n value, k value or One of primary condition of the amount of warpage of substrate measures, therefore can close from the measurement result of the primary condition and first System, the pattern of the film processed after deducing predetermined processing, and it is based on the pattern presumption result, regulation can be found out from the second relationship The correction value of the treatment conditions of processing.Then, due to after being modified based on treatment conditions of the correction value to predetermined processing, Predetermined processing is carried out to substrate with the treatment conditions that are corrected, thus can the film processed on substrate form the figure of predetermined size Case.It therefore, also can be as described above according to the primary condition of substrate and by each substrate amendment rule even if when continuous processing substrate Surely the treatment conditions handled can make the pattern of film processed be formed as predetermined size by each substrate.

In above-mentioned viewpoint, the predetermined processing that above-mentioned treatment conditions are corrected in above-mentioned control device is, in above-mentioned coating The heat treatment carried out after exposure-processed and before development treatment in development processing apparatus.

In above-mentioned viewpoint, the predetermined processing that above-mentioned treatment conditions are corrected in above-mentioned control device is, in above-mentioned coating The heat treatment carried out after photoresist coating processing and before exposure-processed in development processing apparatus.

In above-mentioned viewpoint, the predetermined processing that above-mentioned treatment conditions are corrected in above-mentioned control device is, in above-mentioned etching The etching process carried out in processing unit.

In above-mentioned viewpoint, further includes: pattern dimension measuring device, be arranged in above-mentioned etching process device, and to The above-mentioned pattern dimension of the above-mentioned film processed formed in above-mentioned etching process device measures, and above-mentioned control device is constituted For using upper in the measurement result and above-mentioned measuring device of the above-mentioned pattern dimension in above-mentioned pattern dimension measuring device The above-mentioned measurement result of primary condition is stated, above-mentioned first relationship is corrected, uses the above-mentioned figure in above-mentioned pattern dimension measuring device The above-mentioned measurement result of case size and above-mentioned treatment conditions by the modified predetermined processing of above-mentioned control device are corrected above-mentioned Second relationship.

In above-mentioned viewpoint, above-mentioned first relationship is above-mentioned primary condition, the above-mentioned pattern dimension with above-mentioned film processed It is related to the size of the size of above-mentioned photoetching agent pattern difference, above-mentioned second relationship be predetermined processing above-mentioned treatment conditions, with The above-mentioned pattern dimension of above-mentioned film processed is related to the size of the size of above-mentioned photoetching agent pattern difference.

In above-mentioned viewpoint, further includes: pattern dimension measuring device is arranged in above-mentioned etching process device, and to upper The above-mentioned pattern dimension for stating the above-mentioned film processed formed in etching process device measures: and the measurement of another pattern dimension Device is arranged in above-mentioned coating development processing apparatus, and to the above-mentioned photoresist formed in above-mentioned coating development processing apparatus The size of pattern measures, and above-mentioned control device is constituted are as follows: using above-mentioned processed in above-mentioned pattern dimension measuring device The size of above-mentioned photoetching agent pattern in the measurement result of the above-mentioned pattern dimension of film and above-mentioned another pattern dimension measuring device Measurement result size is poor and the above-mentioned measurement result of above-mentioned primary condition in above-mentioned measuring device, correct above-mentioned the One relationship；Using the above-mentioned film processed in above-mentioned pattern dimension measuring device above-mentioned pattern dimension measurement result with it is above-mentioned The size of the measurement result of the size of above-mentioned photoetching agent pattern in another pattern dimension measuring device is poor and by above-mentioned control The above-mentioned treatment conditions of the modified predetermined processing of device correct above-mentioned second relationship.

In above-mentioned viewpoint, on the substrate before measuring above-mentioned primary condition by above-mentioned measuring device, it is also formed with The basilar memebrane of film processed is stated, above-mentioned primary condition is film thickness, the above-mentioned film processed of above-mentioned film processed and above-mentioned basilar memebrane And in the refractive index of above-mentioned basilar memebrane, the absorption coefficient of above-mentioned film processed and above-mentioned basilar memebrane or the amount of warpage of aforesaid substrate Either one or two of.

According to the utility model, the processing item of predetermined processing can be corrected by each substrate according to the primary condition of substrate Part makes the pattern dimension of film processed be formed as predetermined size by each substrate.

Detailed description of the invention

Fig. 1 is the explanatory diagram for indicating the outline structure of base plate processing system of the present embodiment.

Fig. 2 is the longitudinal section of the wafer before processing.

Fig. 3 is the longitudinal section for indicating the outline structure of film measuring device.

Fig. 4 is the explanatory diagram for indicating the wafer area being partitioned into.

Fig. 5 is the longitudinal section for indicating the outline structure of warpage measuring device.

Fig. 6 is the top view for indicating the outline structure of coating developing device.

Fig. 7 is the main view of coating developing device.

Fig. 8 is the rearview of coating developing device.

Fig. 9 is the longitudinal section for indicating the outline structure of PEB device.

Figure 10 is the top view for indicating the structure of hot plate of PEB device.

Figure 11 is the top view for indicating the outline structure of etching process device.

Figure 12 is the longitudinal section for indicating the outline structure of Etaching device.

Figure 13 is the longitudinal section for indicating the outline structure of pattern dimension measuring device.

Figure 14 is the block diagram for indicating the structure of control unit.

Figure 15 (a) is to indicate the primary condition of wafer chart relevant to the first of the pattern dimension of film processed.

Figure 15 (b) is to indicate the primary condition of wafer chart relevant to the first of the pattern dimension of film processed.

Figure 15 (c) is to indicate the primary condition of wafer chart relevant to the first of the pattern dimension of film processed.

Figure 15 (d) is to indicate the primary condition of wafer chart relevant to the first of the pattern dimension of film processed.

Figure 16 is to indicate the heating temperature of PEB device chart relevant to the second of the pattern dimension of film processed.

Figure 17 is the flow chart for indicating each step of wafer-process.

Figure 18 (a) is the explanatory diagram of the membrane stage on the wafer indicated in each step.

Figure 18 (b) is the explanatory diagram of the membrane stage on the wafer indicated in each step.

Figure 18 (c) is the explanatory diagram of the membrane stage on the wafer indicated in each step.

Figure 18 (d) is the explanatory diagram of the membrane stage on the wafer indicated in each step.

Figure 19 (a) is the first relevant chart for indicating another embodiment.

Figure 19 (b) is the first relevant chart for indicating another embodiment.

Figure 20 is the second relevant chart for indicating another embodiment.

Figure 21 is to indicate the heating temperature of PAB device chart relevant to the second of the pattern dimension of film processed.

Figure 22 is to indicate the treatment conditions of Etaching device chart relevant to the second of the pattern dimension of film processed.

Specific embodiment

Hereinafter, illustrating preferred embodiments of the present invention.Fig. 1 is to indicate processing substrate system of the present embodiment The top view of the outline structure of system 1.In addition, in present embodiment, be previously formed on wafer W as shown in Figure 2 film F processed and Its basilar memebrane G.Film F processed is, for example, Poly-Si film, and basilar memebrane G is, for example, SiO2 film.

As shown in Figure 1, base plate processing system 1 includes: measuring device 2, the primary condition of aftermentioned wafer W is measured；Coating Development processing apparatus 3 carries out photoetching treatment to wafer W；And etching process device 4, to the film F processed on wafer W It is etched.

As shown in Figure 1, measuring device 2 has the structure that substrate box master station 10 and inspection station 11 link into an integrated entity, the base Such as 25 wafer W are carried out carrying-in/carrying-out from outside relative to measuring device 2 as unit of substrate box by Ban He master station 10, or Wafer W is carried out carrying-in/carrying-out relative to substrate box C by person, which carries out regulation inspection to wafer W.

In substrate box master station 10, multiple substrate box C can freely be loaded in a row.Substrate box master station 10 is equipped with and can carry The wafer transporter 13 moved in X direction on route 12.Wafer transporter 13 is also in the crystalline substance of the wafer W stored along substrate box C It moves freely, the wafer W arranged along the vertical direction in substrate box C can selectively be leaned on circle best-fit direction (vertical direction) Closely.Wafer transporter 13 can be rotated around the axis of vertical direction, film measuring device 20 for aftermentioned 500 side of inspection station and can also be stuck up Bent measuring device 21 is close.

Inspection station 11 includes: film measuring device 20, to film thickness, the n of film F and its basilar memebrane G processed on wafer W Value, k value etc. measure；And warpage measuring device 21, measure the amount of warpage of wafer W.In addition, by film F processed and base The film thickness of counterdie G, n value, k value, the amount of warpage of wafer W are known as the primary condition of wafer W.

As shown in figure 3, film measuring device 20 includes that wafer W is maintained to horizontal chuck 30 and light to do inside it Interferometric measuring instrument 31.Chuck 30 is set to platform 32, can moving in two dimensional directions in the horizontal direction.Light interference type measuring instrument 31 wraps Include: probe 33 irradiates light to wafer W, and receives its reflected light；And measurement portion 34, the light based on the probe 33 Information measures the film thickness of film F and basilar memebrane G processed on wafer W, n value, k value.By making wafer W relative to spy Needle 33 relatively moves, can to the multiple regions in wafer face, such as each wafer area W1~W5 shown in Fig. 4 process film and The film thickness of basilar memebrane G, n value, k value measure.In addition, wafer area W1~W5 and aftermentioned coating development processing apparatus 3 Thermal panel area R1~R5 of postexposure bake device 174~179 (hereinafter referred to as " PEB device ") is corresponding.In addition, film thickness, n value, k The measurement result of value is output to aftermentioned control device 400.

As shown in figure 5, warpage measuring device 21 includes: the mounting table 40 for loading wafer W inside it.Mounting table 40 passes through It is fixed on the mounting table supporting part 41 of the side wall 21a of such as warpage measuring device 21, to be horizontally disposed with.The mounting surface of mounting table 40 On be provided with bearing wafer W multiple fulcrum posts 42.In the lower section of mounting table 40, gone up and down equipped with multiple through the mounting table 40 Lifter pin 43 freely.Lifter pin 43 is equipped with driving mechanism 45 by bracket 44, and lifter pin 43 passes through the dynamic of the driving mechanism 45 Make to go up and down.

Side wall 21a is fixed on by displacement meter supporting part 48 in the top of mounting table 40, such as two laser displacement gauges 46,47 And it is arranged.The top by central part of wafer W is arranged in laser displacement gauge 46；The outer of wafer W is arranged in laser displacement gauge 47 The top of circumference.These laser displacement gauges 46,47 can measure at a distance from wafer W surface.Moreover, each laser displacement gauge 46, 47 measurement result is output to measurement portion 49, for example by each above-mentioned wafer area W1~W5 by amount of warpage of wafer W etc. Measurement.The amount of warpage of wafer W is output to for example aftermentioned control device 400.In addition, the measurement of the amount of warpage of wafer W is not It is defined in and is carried out by laser displacement gauge 46,47, such as also can be used and the filming apparatus of the side of wafer W is set to carry out. In this case, be able to use above-mentioned filming apparatus and the side of wafer W shot with carrying out complete cycle from side, and based on by This obtained image measures the amount of warpage of wafer W.

Substrate box master station 100, treating stations 101 and Interface Station 103 are connected as shown in fig. 6, coating development processing apparatus 3 has Be connected into integrated structure, the substrate box master station 100 by such as 25 wafer W as unit of substrate box from outside relative to coating Development processing apparatus 3 carries out carrying-in/carrying-out, or wafer W is carried out carrying-in/carrying-out, the treating stations more than 101 relative to substrate box C Section configured in photoetching treatment one chip apply predetermined processing multiple various processing units, the Interface Station 103 with it is adjacent Between the exposure device 102 of the treating stations 101 setting, the handover of wafer W is carried out.

Substrate box master station 100 is equipped with substrate box mounting table 104, and in the substrate box mounting table 104, can be by multiple substrate boxes C in X direction (up and down direction in Fig. 6) freely load it is in a row.Substrate box master station 100 is equipped with can be on transportation route 105 towards X The mobile wafer transporter 106 in direction.Wafer transporter 106 can also be along the wafer arrangement direction for the wafer W that substrate box C is stored (Z-direction；Vertical direction) it is mobile, it can be selectively close relative to the wafer W in each substrate box C arranged in X direction.

Wafer transporter 106 can rotate on the direction θ about the z axis, also can be relative to belonging to aftermentioned 101 side for the treatment of stations Third processing unit group G3 register 150 or transmission device 151 for joining wafer W it is close.

The treating stations 101 adjacent with substrate box master station 100 have multistage configured at such as five of multiple processing units Manage device group G1~G5.In X-direction negative direction (the lower direction in Fig. 6) side for the treatment of stations 101, from 100 side of substrate box master station according to Sequence is configured with the first processing unit group G1, second processing device group G2.It is (upper in Fig. 6 in the X-direction positive direction for the treatment of stations 101 Direction) side, it is sequentially configured with from third processing unit group G3, fourth process device group G4 and the 5th from 100 side of substrate box master station Manage device group G5.Between third processing unit group G3 and fourth process device group G4, it is equipped with the first handling device 107.First removes Shipping unit 107 can be to managing everywhere in the first processing unit group G1, third processing unit group G3 and fourth process device group G4 Device is selectively close, and carries wafer W.Between fourth process device group G4 and the 5th processing unit group G5, it is equipped with second Handling device 108.Second handling device 108 can be handled second processing device group G2, fourth process device group G4 and the 5th Reason device is selectively close everywhere in device group G5, and carries wafer W.

As shown in fig. 7, the first processing unit group G1 from bottom to top sequentially five sections overlap with: to wafer W supply regulation liquid Liquid handling device to be handled, the photoresist applying device 110,111,112 for example to wafer W coating photoresist liquid； And bottom applying device 113,114, form the antireflection film of the reflection for light when preventing exposure-processed.Second processing Device group G2 from bottom to top sequentially five sections overlap with liquid handling device, for example, provide and developer solution and carry out at development to wafer W The development processing apparatus 120~124 of reason.In addition, the lowermost of the first processing unit group G1 and second processing device group G2 are distinguished Equipped with chemistry cell 130,131, various treatment fluids are provided for the liquid handling device into each processing unit group G1, G2.

As shown in figure 8, third processing unit group G3 from bottom to top sequentially nine sections overlap with: register 150；Transmission device 151；High-precision register 152~154 carries out temperature adjusting to wafer W under high-precision temperature management；And it is high Temperature annealing device 155~158 heats wafer W with high temperature.

Fourth process device group G4 for example from bottom to top sequentially ten sections overlap with: high-precision register 160；Prebake conditions dress 161~164 (hereinafter referred to as " PAB devices ") are set, treated that wafer W heats to photoresist coating；After and Apparatus for baking 165~169 (hereinafter referred to as " POST device "), heats the wafer W after development treatment.

5th processing unit group G5 from bottom to top sequentially ten sections overlap with: multiple annealing devices that wafer W is heat-treated, Such as high-precision register 170~173；And PEB device 174~179, the wafer W after exposure is heated.

As shown in fig. 6, the X-direction positive direction side in the first handling device 107 is configured with multiple processing units, such as Fig. 8 institute Show, from bottom to top sequentially four sections overlap with: for by the attachment device 180,181 of wafer W silicic acid anhydride；And heating wafer The heating device 182,183 of W.As shown in fig. 6, the X-direction positive direction side in the second handling device 108 is configured with all edge exposure dresses 184 are set, only selectively exposes the edge part of such as wafer W.

As shown in fig. 6, Interface Station 103 is equipped with: wafer transporter 191, on the transportation route 190 extended towards X-direction It is mobile；And buffer substrate box 192.Wafer transporter 191 can be moved along Z-direction, and can also be rotated along the direction θ, and can be right The exposure device 102 adjacent with Interface Station 103, buffer substrate box 192 and the 5th processing unit group G5 are close, and carry wafer W.

Then, illustrate the structure of above-mentioned PEB device 174~179.As shown in figure 9, being equipped in PEB device 174: lid 200, it is located at upside, and can move up and down；And hot plate incorporating section 201, it is located at downside, is integrally formed with lid 200, and Form process chamber K.

Lid 200 has the substantially cylindrical shape of bottom opening.The top surface central portion of lid 200 is equipped with exhaust portion 200a. Environmental gas in process chamber K is equably discharged from exhaust portion 200a.

Hot plate incorporating section 201 includes: holding member 211, annular in shape, stores such as hot plate 210, and keep hot plate 210 Peripheral part；And support ring 212, it is slightly cylindrical in shape, around the periphery of the holding member 211.

As shown in Figure 10, hot plate 210 is divided into multiple such as five thermal panel areas R1, R2, R3, R4, R5.Such as from upper Apparently, hot plate 210 is divided into: thermal panel area R1 for side, centrally located portion and rounded；And thermal panel area R2~R5, Being will be around it made of arc-shaped quartering.

In each thermal panel area R1~R5 of hot plate 210, it is distinctly built-in with the heater 213 to generate heat by power supply, it can Each thermal panel area R1~R5 is heated.The calorific value of the heater 213 of each thermal panel area R1~R5 is controlled by temperature and is filled Set 214 adjustment.Temperature control equipment 214 adjusts the calorific value of heater 213, can be by the temperature control of each thermal panel area R1~R5 System is in defined heating temperature.The setting of the heating temperature of temperature control equipment 214 be for example, by aftermentioned control device 400 and It carries out.

As shown in figure 9, the lower section of hot plate 210 is equipped with lifter pin 220, which is used to support wafer W from below, And make its lifting.Lifter pin 220 can be moved up and down by lift drive mechanism 221.The central portion of hot plate 210 is formed about There is through hole 222, through-thickness runs through hot plate 210, and lifter pin 220 rises from the lower section of hot plate 210 and passes through through hole 222, the top of hot plate 210 can be projected into.

In addition, the structure of PEB device 175~179 is identical as above-mentioned PEB device 174, so the description thereof will be omitted.

As shown in figure 11, etching process device 4 includes: substrate box master station 300, and wafer W is filled relative to etching process Set 4 carry out carrying-in/carrying-out；Common trucking department 301 carries out the carrying of wafer W；Etaching device 302,303, will be on wafer W Film F etch processed is at predetermined pattern；And the pattern dimension measuring device 304,305 as pattern dimension measuring device, Measure the pattern dimension of film F processed.

Substrate box master station 300 includes carrying room 311, which is being internally provided with the wafer carrying for carrying wafer W Mechanism 310.Wafer carrying mechanism 310, which has, maintains wafer W two approximate horizontal handling arm 310a, 310b, is configured to Wafer W is kept by any of these handling arm 310a, 310b, is carried simultaneously.Have in the side of carrying room 311 Substrate box mounting table 312, the substrate box mounting table 312 can load the substrate box C that can be arranged more wafers W and store.Figure In the example shown, substrate box mounting table 312 can load multiple such as three substrate box C.

Two conveyings locking (load lock) device that carrying room 311 and common trucking department 301 pass through vacuum-pumping 313a, 313b, to be interconnected.

Common trucking department 301, which has, carries chamber 314, which for example comes seen from above, is shaped generally as more The construction that can be closed of side shape (being hexagon in the example of diagram).Carry the wafer for being provided in chamber 314 and carrying wafer W Carrying mechanism 315.Wafer carrying mechanism 315, which has, maintains wafer W two approximate horizontal handling arm 315a, 315b, structure Wafer W is kept as by any of these handling arm 315a, 315b, is carried simultaneously.

In the outside for carrying chamber 314, Etaching device 302, Etaching device 303, pattern dimension measuring device 304,305, Locking device 313b, 313a are transported to surround the mode carried around chamber 314, such as come seen from above, by side clockwise To sequential, and with carry chamber 314 six side surface parts respectively opposite mode and configure.

Then, illustrate Etaching device 302.As shown in figure 12, Etaching device 302 includes the chamber 320 of upper opening.Chamber 320 upper opening is equipped with aftermentioned spray head 330, and the inner space of chamber 320, i.e. process chamber 321 are closed.

The mounting table 322 of mounting wafer W is provided in process chamber 321.In the top surface of mounting table 322, by wafer W with substantially Horizontal posture is kept.

Mounting table 322 is built-in with electrode plate 323, the bias company of high frequency electric source 324 of electrode plate 323 and such as 13.56MHz It connects.The surface of mounting table 322 is set to generate electrostatic force, it can be by wafer W Electrostatic Absorption in mounting table 322.

Mounting table 322 is built-in with the thermoregulative mechanism 325 for making refrigerant medium circulate.Thermoregulative mechanism 325 and adjustment refrigerant The liquid temperature adjustment portion 326 of the temperature of medium connects.Moreover, the temperature of refrigerant medium is adjusted by liquid temperature adjustment portion 326, it can Control the temperature of mounting table 322.As a result, it is possible to wafer W placed in mounting table 322 is maintained at predetermined temperature.

The upper opening of chamber 320 is equipped with spray head 330.Spray head 330 is connected with plasma gas supply by supply pipe 331 Source 332.Plasma (orifice) gas when plasma gas source of supply 332 is stored such as Ar gas, Xe gas, O2 gas as etching Body.Supply pipe 331 is equipped with flow regulator 333, which is supplied to spray to from plasma gas source of supply 332 First 330 plasma gas carries out flow adjusting.In addition, spray head 330 is connected with processing gas source of supply by supply pipe 334 335.Processing gas source of supply 335 stores the conduct such as Ar gas, Xe gas, CF4 gas, C4F8 gas, C5F8 gas Processing gas when etching.Supply pipe 334 is equipped with flow regulator 336, and the flow regulator 336 is to from processing gas source of supply 335 processing gas for being supplied to spray head 330 carry out flow adjusting.

The inside of spray head 330 is equipped with inner space 340, which imports supplies from plasma gas source of supply 332 The plasma gas answered and the processing gas supplied from processing gas source of supply 335.In the bottom surface of spray head 330, multiple discharges Mouth 341 is arranged with being distributed in the state of 330 bottom surface of spray head entirety, and multiple outlet 341 makes the gas for importing inner space 340 Body is discharged into process chamber 321.That is, above wafer W placed in mounting table 322, with the gas warp in inner space 340 It is discharged by multiple outlets 341, and is diffused into the whole mode of process chamber 321 and configures.

330 top of spray head is provided with the radial linear slit for two-dimensionally and equably supplying the high-frequency microwave for generating plasma Gap antenna (RLSA, radial line slot antenna) 342.Radial line slot antenna 342 is connected with microwave oscillation device (not shown), to 342 oscillating microwave of radial line slot antenna.

The bottom surface of chamber 320 is equipped with exhaust pipe 343.Exhaust pipe 343 is connected with exhaust pump (not shown), can be via exhaust pipe 343 the environmental gas in process chamber 321 is discharged.

In addition, the structure of Etaching device 303 is identical as above-mentioned Etaching device 303, so the description thereof will be omitted.

Then, illustrate the structure of pattern dimension measuring device 304.As shown in figure 13, it is set in pattern dimension measuring device 304 Have: by the mounting table 350 and optical profile type surface shape measurer 351 of wafer W level mounting.Mounting table 350 can be along such as water Square to moving in two dimensional directions.Optical profile type surface shape measurer 351 includes: illumination part 352, from oblique to wafer W Irradiate light；Optical detection part 353, to irradiating from illumination part 352 and detected by the light that wafer W reflects；And it surveys Amount portion 354, based on the optical detection part 353 by optical information, calculate the pattern dimension of the film F processed on wafer W.Pattern Dimension measuring device 304 measures the pattern dimension of film F processed, In using such as scatterometry (Scatterometry) method In measurement portion 354, by the light intensity distributions in the wafer face detected by optical detection part 353 and the imaginary luminous intensity being previously stored Distribution is compareed, and seeks the pattern dimension of processed film F corresponding with the imaginary light intensity distributions after the control, thus, it is possible to Enough measure the pattern dimension of film F processed.The measurement result of the pattern of the film F processed is output to for example aftermentioned control device 400.In addition, the pattern dimension as film F processed, measurement such as the line width of pattern, side wall angle, contact hole diameter.This Outside, when pattern dimension measuring device 304 is using scatterometry, while measuring the pattern dimension of above-mentioned film F processed, Film thickness, the n value, k value of basilar memebrane G can be measured.

In addition, in pattern dimension measuring device 304, by making wafer W Relative light intensity penetrate 353 phase of portion 352 and optical detection part It moves horizontally over the ground, the multiple regions in wafer face, such as the pattern of each wafer area W1~W5 shown in Fig. 4 can be measured Size.

In addition, the structure of pattern dimension measuring device 305 is identical as above-mentioned pattern dimension measuring device 304, so omitting Its explanation.

Then, to the control device of the heating temperature for the temperature control equipment 214 for controlling above-mentioned PEB device 174~179 400 are illustrated.Control device 400 is by for example including central processing unit (CPU；Central Processing Unit) or deposit The versatility computer of reservoir etc. is constituted.

As shown in figure 14, control device 400 for example, input unit 401, future measurement device 2 or pattern dimension The measurement result of measuring device 304 inputs；Data store 402 is stored with the measurement result based on measuring device 2 and calculates Various information needed for the treatment conditions of PEB device 174~179；Program storage part 403 is stored with for calculating PEB dress Set the program P of 174~179 treatment conditions；Operational part 404 executes program P, to calculate treatment conditions；And output section 405, calculated treatment conditions are output to PEB device 174~179 etc..

Data store 402 is stored with the data for indicating the first correlation M1, the first correlation M1 such as Figure 15 (a) to Figure 15 (d) shown in, the first relationship of the pattern dimension of the primary condition and film F processed as wafer W.Initial strip as wafer W Part has the amount of warpage of the film thickness of film F and basilar memebrane G processed, n value, k value or wafer W as described above, and is stored with expression For data (Figure 15 (a) to Figure 15 (d)) of the first correlation M1 of each condition.In addition, in Figure 15 (d), the amount of warpage of wafer W When being negative, wafer W is the shape protruded downwards, and is timing in the amount of warpage of wafer W, and wafer W is the shape protruded upwards Shape.In addition, data store 402 is stored with the data for indicating the second correlation M2, it is PEB that second correlation M2 is as shown in figure 16 The heating temperature of the temperature control equipment 214 of device 174~179 is related to the pattern dimension of film F processed.In addition, these The data of related M1, M2 are stored by each wafer area W1~W5 and thermal panel area R1~R5.

In addition, for realizing the function of control device 400 program P can be stored in it is for example computer-readable hard Disk (HD, Hard disk), floppy disk (FD, flexible disk), CD (CD, Compact Disk), magneto-optic disk (MO, Magnet Optical Disk), storage card, solid state hard disk (SSD, Solid State Drive) etc. is computer-readable deposits Storage media, and it is installed on from the storage medium program of control device 400.

Base plate processing system 1 of the present embodiment is constituted as described above, then, is illustrated in the base plate processing system 1 The wafer-process of progress.Figure 17 is the flow chart for indicating the key step of wafer-process.In addition, Figure 18 (a) to Figure 18 (d) is table Show the explanatory diagram of the membrane stage on the wafer W in each step.

Firstly, the substrate box C for being accommodated with wafer W is moved to the substrate box master station 10 of measuring device 2.Then, by wafer Transporter 13 takes out wafer W from substrate box C, is transported in the film measuring device 20 or warpage measuring device 21 of inspection station 500 Any one.

Such as when wafer W is transported to film measuring device 20, wafer W is adsorbed by chuck 30 and is kept.Later, from the interference of light Formula measuring instrument 31 irradiates light to wafer W.Then, in measurement portion 34, by each wafer area W1~W5 to as the first of wafer W The film thickness of the film F and basilar memebrane G processed of beginning condition, n value, k value measure.The measurement result of these primary condition is exported To control device 400 (the step S1 of Figure 17).

In addition, wafer W is placed in mounting table 40 when wafer W being for example transported to warpage measuring device 21.So Afterwards, each laser displacement gauge 46,47 is measured at a distance from wafer W by laser displacement gauge 46,47.The measurement result is output to survey Amount portion 49, and the amount of warpage by each wafer area W1~W5 measurement as the wafer W of the primary condition of wafer W.The initial strip The measurement result of part is output to control device 400 (the step S1 of Figure 17).

In control device 400, the measurement result of the primary condition of the wafer W from above-mentioned measuring device 2 is input into defeated Enter portion 401.Then, by being stored in the program P of program storage part 403, the measurement result based on primary condition, according to the first phase M1 is closed, the pattern dimension (the step S2 of Figure 17) of the film F processed after photoetching treatment and etching process is deduced.Based on the figure The presumption result of case calculates the heating temperature of each thermal panel area R1~R5 of PEB device 174~179 according to the second correlation M2 The correction value (the step S3 of Figure 17) of degree.Calculated result is output to PEB device 174~179 from output section 405, corrects temperature The heating temperature (the step S4 of Figure 17) of control device 214.Therefore, by heating wafer W with the heating condition being corrected, come The size adjusting established practice of the pattern of film F processed is set the goal size.

In the inspection station 500 of measuring device 2, at the end of the measurement of the primary condition of wafer W, wafer W is carried by wafer Body 13 sends substrate box C back to.Then, the substrate box C for having stored wafer W is moved out from measuring device 2, then moves in coating development treatment Device 3.

It applies in development processing apparatus 3, firstly, passing through wafer transporter 106 from the substrate box in substrate box mounting table 104 Wafer W is taken out in C, is transported to the register 150 of third processing unit group G3.It is carried to the wafer W of register 150 After being tempered into predetermined temperature, bottom applying device 113 is transported to by the first handling device 107, forms antireflection film B (Figure 18 (a)).The wafer W for being formed with antireflection film B is sequentially transported to heating device 182, high-precision temperature adjustment by the first handling device 107 Device 160, and apply defined processing in each device.Then, wafer W is moved to photoresist applying device 110, in wafer W Upper formation photoresist film R (Figure 18 (b)).

In photoresist applying device 110, when forming photoresist film R on wafer W, wafer W is removed by the first handling device 107 PAB device 161 is transported to, periphery exposure device 184, high-precision register are sequentially then transported to by the second handling device 108 173, and processing as defined in applying in each device.Later, exposure device is transported to by the wafer transporter 191 of Interface Station 103 102, the photoresist film on wafer W exposes predetermined pattern.The wafer W for terminating exposure-processed is transported to by wafer transporter 191 PEB device 174 bestows heat treatment to wafer W to press above-mentioned each revised heating temperature of wafer area W1~W5.

At the end of the heat treatment of PEB device 174, wafer W is transported to high-precision register by the second handling device 108 81 to carry out temperature adjusting, then is transported to development processing apparatus 120, applies development treatment on wafer W, photoresist film is shown Shadow.Later, wafer W is transported to POST device 165 by the second handling device 108, after bestowing heat treatment, is transported to high-precision and adjusts Warm device 173, trip temperature of going forward side by side are adjusted.Then, wafer W is transported to transmission device 151 by the first handling device 107, then by crystalline substance Circle transporter 106 sends substrate box C back to, forms photoetching agent pattern T (step S5, Figure 18 (c) of Figure 17) on wafer W.

Apply in development processing apparatus 3, when forming photoetching agent pattern T on wafer W, be accommodated with the substrate box C of wafer W from Coating development processing apparatus 3 is moved out, and etching process device 4 is then moved in.

In etching process device 4, firstly, passing through wafer carrying mechanism 310 from the substrate box C in substrate box mounting table 312 Wafer W is taken out, and is moved in conveying locking device 313a.When wafer W is moved in conveying locking device 313a, conveying lock Determine it is closed in device 313a, and depressurize.Later, make transport locking device 313a in to atmospheric pressure in decompression state (such as Substantial vacuum state) carrying chamber 314 in connection.Then, by wafer carrying mechanism 315, wafer W is filled from conveying locking It sets 313a to move out, moves in and carry in chamber 314.

The wafer W carried in chamber 314 is moved in, the process chamber of Etaching device 302 is then moved in by wafer carrying mechanism 315 321, and using device forming face as the state of top surface, it is placed in mounting table 322.At this point, mounting table 322 is adjusted by thermoregulative mechanism 325 Save into defined temperature.Later, process chamber 321 is closed, the pressure of process chamber 321 at subatmospheric power authorized pressure (such as -0.1MPa (measurement pressure) left and right).Thereafter, it will be waited from plasma gas source of supply 332 and processing gas source of supply 335 Ionized gas and processing gas are respectively to provide that flow is supplied in spray head 330, and plasma gas is by from radial line slot day Microwave that line 342 radiates and plasma.Then, these plasmas and processing gas are supplied to process chamber from spray head 330 In 321.In this way, supplying wafer W plasma and processing gas to the defined time under reduced pressure, thus etch on wafer W Film F processed, then removes photoetching agent pattern T and antireflection film B, and pattern X as defined in being formed in film F processed (Figure 17's Step S6, Figure 18 (d)).

Then, after purging in process chamber 321, wafer W is moved out from process chamber 321 by wafer carrying mechanism 315.From processing The wafer W that room 321 moves out then is moved to pattern dimension measuring device 304.

The wafer W for moving in pattern dimension measuring device 304 is placed in mounting table 350.Then, from 352 pairs of crystalline substances of illumination part The prescribed portion irradiation light of circle W, detects its reflected light by optical detection part 353, in measurement portion 354, measures and is located on wafer W Manage the size of the pattern X of film F, such as the diameter etc. (the step S7 of Figure 17) of line width, side wall angle, contact hole.These film F processed The dimension measurement result of pattern X be output to control device 400.

In control device 400, the pattern X of the film F processed on the wafer W based on above-mentioned pattern dimension measuring device 304 Dimension measurement result and wafer W the primary condition of measuring device 2 measurement result, correct the first correlation M1.This Outside, meanwhile, the dimension measurement result and wafer W of the pattern X based on the film F processed on wafer W is heat-treated The heating temperature of PEB device 174 corrects the second correlation M2 (the step S8 of Figure 17).The wafer W's ' next handled as a result, The amendment precision of the heating temperature of PEB device 174~179 more improves.In addition, being measured in pattern dimension measuring device 304 The size of the pattern X of film F processed, while also in the case where the film thickness of measurement basilar memebrane G, n value, k value, in amendment above-mentioned first When related M1, film thickness, the n value, k value of the basilar memebrane G of pattern dimension measuring device 304 can be used, also to replace measuring device 2 Measurement result.

When measuring the size of the pattern X of film F processed of wafer W by pattern dimension measuring device 304, removed by wafer Fortune mechanism 315 is sent back to once again carries in chamber 314.Then, wafer carrying mechanism is delivered to by transporting locking device 313b 310, it is received into substrate box C.Later, the substrate box C for having stored wafer W is moved out from etching process device 4, and terminated a succession of Wafer-process.

According to the above implementation, right in measuring device 2 because before carrying out photoetching treatment and etching process to wafer W The primary condition for influencing the pattern X of the film F processed on wafer W measures, so in control device 400, it is first based on this The measurement result of beginning condition can seek the heating of the heat treatment of PEB device 174 according to the first correlation M1 and the second correlation M2 The correction value of temperature.Then, due to based on the correction value amendment PEB device 174 heat treatment heating temperature after, with warp Modified heating temperature heats wafer W, so predetermined size can be formed in the film F processed on wafer W Pattern X.Therefore, it even if when continuous processing wafer W, can also be corrected in this way according to the primary condition of wafer W by each wafer W The heating temperature of PEB device 174, and the pattern X of film F processed can be made to become predetermined size by each wafer is W-shaped.

In addition, in pattern dimension measuring device 304, due to measuring the size in the film F processed pattern X formed, institute Based on the dimension measurement result of pattern X, the first correlation M1 and the second correlation M2 can be corrected in control device 400.In It is that the heating temperature of the PEB device 174 of later handled wafer W can more correctly be corrected, and film processed can be made The pattern X of F is reliably formed as predetermined pattern.

In above embodiment, PEB is corrected by estimating in control device 400 size of pattern X of film F processed The heating temperature of device 174~179, but the ruler of the pattern X of size and film F processed to photoetching agent pattern T can also be passed through Very little size poor (hereinafter referred to as " pattern dimension is poor ") is estimated, and the heating temperature of PEB device 174~179 is corrected.Here, Pattern dimension difference refers to, the line width CD2 of the pattern X of film F processed shown in Figure 18 (d), with photoresist figure shown in Figure 18 (c) The difference of the line width CD1 of case T.At this point, the data store 402 of control device 400 is accommodated with: the first correlation M1 ', such as Figure 19 (a) It is shown, it is that the primary condition of wafer W is related to pattern dimension difference；And second correlation M2 ' be as shown in Figure 19 (b) The heating temperature of PEB device 174~179 is related to pattern dimension difference.In addition, indicating the initial strip of wafer W in Figure 19 (a) Data when part is the film thickness of film F processed and basilar memebrane G, but be similarly stored with about other primary condition, i.e. n value, k First correlation M1 ' of value or the amount of warpage of wafer W.

In addition, as shown in figure 20, between substrate box master station 100 and treating stations 101, matching in coating development processing apparatus 3 It is equipped with the inspection station 500 of the size for measuring photoetching agent pattern T.Inspection station 500 is provided with the photoresist figure on measurement wafer W Another pattern dimension measuring device 501 of the size of case T.Pattern dimension measuring device 501 is configured at the X of such as inspection station 500 Direction negative direction (the lower direction of Figure 20) side.Such as it is configured with junction 502 in 100 side of substrate box master station of inspection station 500, it should Junction 502 is used to join wafer W between substrate box master station 100.The junction 502 is equipped with the mounting of mounting such as wafer W Portion 502a.In the X-direction positive direction (the upper direction of Figure 20) of pattern dimension measuring device 501, being equipped with for example can be in transportation route The wafter delivery appts 504 moved in X direction on 503.Wafter delivery appts 504 can for example move along the vertical direction, and along the side θ To rotating freely, it is capable of third processing unit group G3's to 4 side of pattern dimension measuring device 501, junction 502 and treating stations Each processing unit is close.In addition, the structure of pattern dimension measuring device 500 is identical as above-mentioned pattern dimension measuring device 304, institute With the description thereof will be omitted.In addition, the other structures of substrate board treatment 1 are identical as the substrate board treatment 1 of above embodiment.

At this point, after the primary condition that measuring device 2 measures wafer W, will be surveyed in method identical with above embodiment Amount result is output to control device 400 (the step S1 of Figure 17).In control device 400, the measurement result based on primary condition, root It is poor (the step S2 of Figure 17) according to the first correlation M1 ' presumption pattern dimension.Based on the presumption result of pattern dimension difference, according to second Related M2 ' calculates the correction value (the step S3 of Figure 17) of the heating temperature of PEB device 174~179.Then, with above-mentioned reality The identical method of mode is applied, the heating temperature (the step S4 of Figure 17) of PEB device 174~179 is corrected, in coating development treatment dress 3 are set, photoetching treatment is carried out, and forms photoetching agent pattern T (the step S5 of Figure 17) on wafer W.Later, in present embodiment, The line width CD1 of photoetching agent pattern T is measured in the pattern dimension measuring device 500 of same coating development processing apparatus 3, then by the survey Amount result is output to control device 400.Then, with method identical with above embodiment, in etching process device 4, In After film F processed forms pattern X, the line width CD2 of pattern X is measured, and its measurement result is output to the (figure of control device 400 17 step S6, S7).In control device 400, the CD2 of the pattern X based on the film F processed measured and photoetching agent pattern T Line width CD1 size it is poor, correct the first correlation M1 ' and the second correlation M2 ' (the step S8 of Figure 17).

According to the above implementation, even if when due to continuous processing wafer W, it can also be based on pattern ruler as described above Very little poor and heating temperature by each wafer amendment PEB device 174~179, so the pattern X of film F processed can be made by every A wafer is W-shaped to become predetermined size.

In above embodiment, the heating temperature of PEB device 174~179 is corrected, but PAB device 161 can also be corrected ~164 heating temperature replaces aforesaid way.At this point, the data store 402 of control device 400 is stored with the second phase of display The data of M3 are closed, second correlation M3 is as shown in figure 21, is the heating temperature of PAB device 161~164 and the figure of film F processed The correlation of the size of case X.Moreover, in control device 400, identically as above embodiment, the wafer W based on measuring device 2 Primary condition measurement result M1 related to first, estimate the size (the step S2 of Figure 17) of the pattern X of film F processed.So Afterwards, the amendment of the heating temperature of PAB device 161~164 is calculated according to the second correlation M3 based on the presumption result of the pattern It is worth (the step S3 of Figure 17).Then, by heating wafer W with the heating temperature being corrected, coming can be by the pattern of film F processed The size adjusting established practice of X sets the goal size.

In addition, correcting the heating temperature of PEB device 174~179 in above embodiment, but etching can also be corrected The treatment conditions of device 302,303 replace aforesaid way.As the treatment conditions, can correct such as etching process when Between, the treatment conditions of the gas flow of the temperature of mounting table 322, flow regulator 333,336 etc..At this point, control device 400 Data store 402 be stored with display the second correlation M4 data, second correlation M4 is as shown in figure 22, be Etaching device 302, 303 treatment conditions are related to the size of the pattern X of film F processed.In these cases, control device 400 is also based on One correlation M1 and the second correlation M4, calculate the correction value (step S2, S3 of Figure 17) for the treatment of conditions, and by be corrected Treatment conditions are etched wafer W, size of that the size adjusting established practice of the pattern X of film F processed can set the goal.

AI: artificial intelligence

Control device 400 can also have AI (Artificial Intelligence, artificial intelligence).AI includes machinery Study module, using for example by the processing method data comprising various parameters, the base executed according to above-mentioned processing method data The result inspection result etc. of wafer W (treated) of plate processing and the sensor values obtained in processing substrate from various sensors Rote learning is carried out etc. accumulation data obtained from associating.

AI can for example export the processing method number for making parameter optimization in a manner of it can obtain more preferably inspection result as a result, According to.Be able to carry out the parameter of optimization for instance that various treatment fluids temperature, flow and service time；It is temperature in device, wet Degree, air pressure and extraction flow；Transporting velocity, stand-by time of wafer W etc..

Control device 400 can be such that a series of processing substrates optimize by using the processing method data of optimization.Example Such as, it can reduce the ratio for being determined as the wafer W of substandard products in inspection process, or can be improved the machining accuracy of wafer W.

In addition, being for example able to use deep learning as rote learning, (Support Vector Machine is supported SVM Vector machine), it is adaptive to enhance the known algorithms such as (AdaBoost), random forest (Random Forest).

More than, referring to attached drawing, illustrate the preferred embodiment of the utility model, but the utility model is not limited to This.It is apparent that as long as those skilled in the art, is contemplated that various modifications in the thought range for being recorded in claims Example or fixed case, the variations such as this or fixed case, also belong to the technical scope of the utility model certainly.The utility model is not limited to This, can be used various forms.Heat treatment, PAB in present embodiment, as defined processing, for amendment PEB device The case where each treatment conditions of the etching process of the heat treatment and Etaching device of device, is recorded, but can also correct it The processing that he records, for example, exposure device exposure-processed etc. treatment conditions.In addition, describing in present embodiment in crystalline substance The case where film and its basilar memebrane processed are formed on circle, but the utility model can also be applied on wafer only form film processed The case where.Moreover, it is that FPD (flat-panel monitor), the photomask other than wafer are covered that the utility model, which can also be applied to substrate, The case where other substrates such as mould master (reticle mask).

The utility model is carrying out predetermined processing, and film processed on the substrate to the substrate for being formed with film processed It is quite useful when forming predetermined pattern.

Claims (8)

1. a kind of base plate processing system, described to the substrate progress predetermined processing for being formed with film processed, and on the substrate Film processed forms defined pattern characterized by comprising

Measuring device to the refractive index of the film thickness of the film processed on the substrate, the film processed, described is located Any of absorption coefficient or the amount of warpage of the substrate for managing film measure, as the primary condition of the substrate；

Development processing apparatus is applied, the downstream side of the measuring device is set, and described just in measuring device measurement After beginning condition, photoetching treatment is carried out to the substrate, to form photoetching agent pattern on the film processed of the substrate；

Etching process device, be arranged in it is described coating development processing apparatus downstream side, and using the photoetching agent pattern as The film processed is etched into the defined pattern by mask；And

Control device controls the measuring device, the coating development processing apparatus and the etching process device respectively, and The treatment conditions of the first relationship and predetermined processing with primary condition and the pattern dimension of film processed and film processed Second relationship of the pattern dimension,

The control device is configured to carry out control as follows:

Based on the measurement result of the primary condition in the measuring device, according to first relationship, after etching process The pattern dimension of the film processed estimated；

Based on the presumption result of the pattern dimension, according to second relationship, in the photoetching treatment or etching process The treatment conditions of predetermined processing are modified.

2. base plate processing system according to claim 1, it is characterised in that:

The predetermined processing that the treatment conditions are corrected in the control device is to expose in the coating development processing apparatus The heat treatment carried out after light processing and before development treatment.

3. base plate processing system according to claim 1, it is characterised in that:

The predetermined processing that the treatment conditions are corrected in the control device is, in light in the coating development processing apparatus The heat treatment carried out after photoresist coating processing and before exposure-processed.

4. base plate processing system according to claim 1, it is characterised in that:

The predetermined processing that the treatment conditions are corrected in the control device is the erosion carried out in the etching process device Quarter processing.

5. base plate processing system according to any one of claim 1 to 4, which is characterized in that further include:

Pattern dimension measuring device is arranged in the etching process device, and to being formed in the etching process device The pattern dimension of the film processed measures,

The control device is configured to, using the measurement result of the pattern dimension in the pattern dimension measuring device, with And the measurement result of the primary condition in the measuring device, first relationship is corrected, the pattern ruler is used The measurement result of the pattern dimension in very little measuring device and institute by the modified predetermined processing of the control device Treatment conditions are stated, second relationship is corrected.

6. base plate processing system according to any one of claim 1 to 4, it is characterised in that:

First relationship is the pattern dimension and the photoetching agent pattern of the primary condition and the film processed The correlation of the size difference of size,

Second relationship is the treatment conditions of predetermined processing, the pattern dimension and the light with the film processed The correlation of the size difference of the size of photoresist pattern.

7. base plate processing system according to claim 6, which is characterized in that further include:

Pattern dimension measuring device is arranged in the etching process device, and to the institute formed in the etching process device The pattern dimension for stating film processed measures: and another pattern dimension measuring device, setting are aobvious in the coating Shadow processing unit, and the size of the photoetching agent pattern formed in the coating development processing apparatus is measured,

The control device is constituted are as follows:

Use the measurement result of the pattern dimension of the film processed in the pattern dimension measuring device and described another The size of the measurement result of the size of the photoetching agent pattern in one pattern dimension measuring device is poor and the measuring device In the primary condition the measurement result, correct first relationship；

Use the measurement result of the pattern dimension of the film processed in the pattern dimension measuring device and described another The size of the measurement result of the size of the photoetching agent pattern in one pattern dimension measuring device is poor and is filled by the control The treatment conditions of modified predetermined processing are set, second relationship is corrected.

8. base plate processing system described in any one of according to claim 1 to 4 or 7, it is characterised in that:

On the substrate before measuring the primary condition by the measuring device, it is also formed with the substrate of the film processed Film,

The primary condition is the folding of the film thickness of the film processed and the basilar memebrane, the film processed and the basilar memebrane Penetrate any of rate, the absorption coefficient of the film processed and the basilar memebrane or amount of warpage of the substrate.