CN209636314U - The exhaust pipe of semiconductor manufacturing apparatus - Google Patents
The exhaust pipe of semiconductor manufacturing apparatus Download PDFInfo
- Publication number
- CN209636314U CN209636314U CN201920259494.3U CN201920259494U CN209636314U CN 209636314 U CN209636314 U CN 209636314U CN 201920259494 U CN201920259494 U CN 201920259494U CN 209636314 U CN209636314 U CN 209636314U
- Authority
- CN
- China
- Prior art keywords
- connecting tube
- vacuum pump
- exhaust pipe
- manufacturing apparatus
- semiconductor manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Abstract
The exhaust pipe that the utility model relates to a kind of suitable for semiconductor manufacturing apparatus, the semiconductor manufacturing apparatus includes the processing chamber for carrying out semiconducter process, exhaust pipe for aspirating the vacuum pump of the technology waste gas in the processing chamber and for connecting the processing chamber with the vacuum pump, the exhaust pipe includes center connecting tube, it heats shell and is set to the connecting elements of two ends of the center connecting tube, the connecting elements covers the coupling part between the processing chamber and the center connecting tube, coupling part between the center connecting tube and the vacuum pump.Pass through the exhaust pipe of the application, it can reduce the accumulation degree for the powder particle accumulated in the exhaust pipe of vacuum pump and exhaust gas processing device, so as to reduce the failure rate of attendant equipment (vacuum pump and exhaust gas processing device etc.), and it is able to extend the effect in preventive maintenance period.
Description
Technical field
The utility model relates to exhaust pipe more particularly to a kind of chemical vapor depositions in for example, semiconductor manufacturing apparatus
Product equipment is used to handle and exhaust pipe used in the exhaust treatment system of discharge technology exhaust gas.
Background technique
In semiconductor industry, chemical vapor deposition (CVD；Chemical Vapor Deposition) method is using gas
State substance is chemically reacted and is generated the technical process of solid deposited object in the surface of solids.The chemical vapour deposition technique is to use
In the technology of depositing multiple materials, application range is very wide.In particular, many films in large scale integrated circuit use
Chemical vapour deposition technique preparation.
As shown in Figure 1, the chemical vapor depsotition equipment in the prior art for carrying out chemical vapor deposition process is main
Include: gas supply unit (not shown), is used to supply gas and gas is mixed；Processing chamber 5 is used to carry out
Chemical reaction and deposition process；It is deposited body handling device (not shown), is used to move into and move out deposited body (for example, brilliant
Circle (wafer), IC chip etc.)；Heating unit 6 provides thermal energy to chemical reaction；Process control unit (is not schemed
Show), it is used to control time and temperature of chemical reaction etc.；Exhaust treatment system 7 comprising vacuum pump 71 and exhaust-gas treatment system
System 72, for carrying out processing to the exhaust gas containing powder particle and being discharged to outside.
For most of semiconductor equipments, as an example with IC chip, in manufacture IC chip
It will use many reaction gas and chemical products (chemical) in the process, therefore many technology waste gas can be generated.In addition, into
During row chemical vapor deposition, more powder particle can be also generated, the powder particle discharges together with technology waste gas
To the outside of chemical vapor depsotition equipment.In the discharge process of the powder particle, it can be deposited in and be set to vent gas treatment system
The exhaust pipe of system.
In addition, being provided in exhaust treatment system and generating negative pressure technology waste gas is discharged to exhaust pipe
Vacuum pump.Therefore, the powder particle can be also deposited in the vacuum pump, to influence the air suction function of the vacuum pump.
As ulking thickness of the powder particle in exhaust pipe becomes larger, the discharge efficiency of the technology waste gas of exhaust treatment system will
It can decline.Therefore, it is necessary to continually carry out the replacement of vacuum pump and exhaust gas processing device, and the cleaning frequency of these components
It is very short.
Since accumulation has more powder particle in the exhaust pipe of vacuum pump and exhaust gas processing device, there is packet
It includes the attendant equipment including vacuum pump and exhaust gas processing device and is easy to happen failure, or the preventive maintenance for these devices
(PM) the problem of period shortens.
To solve the above problems, need to improve vacuum pump and exhaust gas processing device on the whole, but with current
The prior art cannot achieve the technical capability for being able to carry out improvement.Therefore, the above problem is still in entire semiconductor field
The lasting subject under discussion studied and discuss.
During chemical vapor deposition, the generation of powder particle not can avoid, therefore, if not by the powder particle
Packing phenomenon occurs and is smoothly discharged it, then can prevent the above-described problem from occurring.Although the above method can not be ideally
Improve presently, there are the problem of, but can reduce the failure rate of vacuum pump and exhaust gas processing device, and be able to extend and be directed to
The cleaning frequency of vacuum pump and exhaust gas processing device.
Utility model content
The utility model is to propose in view of the above problems, it is intended that providing one kind can improve because of powder
Grain be piled up in the exhaust pipe of vacuum pump and exhaust gas processing device and make attendant equipment break down or the preventive maintenance period become
The exhaust pipe of short semiconductor manufacturing apparatus.
The another object of the utility model is, provides a kind of powder particle and is not piled up in vacuum pump and exhaust gas processing device
Exhaust pipe, and the exhaust pipe of the maximized semiconductor manufacturing apparatus of the emission effect of technology waste gas can be made.
The exhaust pipe of semiconductor manufacturing apparatus according to the present utility model, the semiconductor manufacturing apparatus include carrying out half
The processing chamber of conductor processing technology, the vacuum pump for aspirating the technology waste gas in the processing chamber and described for making
The exhaust pipe that processing chamber is connected with the vacuum pump, which is characterized in that the exhaust pipe includes center connecting tube, heating
Shell and be set to the center connecting tube two ends connecting elements, the connecting elements covers the processing chamber
Coupling part, the center connecting tube between the center connecting tube and the coupling part between the vacuum pump.
The exhaust pipe of semiconductor manufacturing apparatus according to the present utility model, the connecting elements is annular component, described
Connecting elements covers the connection between the end of the outlet port of the processing chamber and the one end of the center connecting tube
Partially and the coupling part between the end of the suction inlet of the other end of the center connecting tube and the vacuum pump.
The exhaust pipe of semiconductor manufacturing apparatus according to the present utility model, the center connecting tube and the connecting elements
It is made of material non-stick.
The exhaust pipe of semiconductor manufacturing apparatus according to the present utility model, the material non-stick are polytetrafluoroethylene (PTFE).
The thickness of the exhaust pipe of semiconductor manufacturing apparatus according to the present utility model, the connecting elements is less than in described
The thickness of heart connecting tube.
The exhaust pipe of semiconductor manufacturing apparatus according to the present utility model is arranged in the inner surface of the center connecting tube
There is internal lining pipe.
The exhaust pipe of semiconductor manufacturing apparatus according to the present utility model, the connecting elements cover the processing chamber
The end of outlet port and the coupling part of one end of the internal lining pipe and the other end of the internal lining pipe and institute
State the coupling part between vacuum pump.
The exhaust pipe of semiconductor manufacturing apparatus according to the present utility model, the connecting elements are annular component,
The internal lining pipe and the connecting elements are made of polytetrafluoroethylene (PTFE) material.
The exhaust pipe of semiconductor manufacturing apparatus according to the present utility model, inner surface, institute in the center connecting tube
It states between coupling part and the center connecting tube and the vacuum pump between processing chamber and the center connecting tube
Coupling part is coated with polytetrafluoroethylene film.
The exhaust pipe of semiconductor manufacturing apparatus according to the present utility model, in the outlet port of the processing chamber
The other end of coupling part and the center connecting tube between end and the one end of the center connecting tube and described
Coupling part between the end of the suction inlet of vacuum pump is coated with polytetrafluoroethylene film.
The exhaust pipe of semiconductor manufacturing apparatus according to the present utility model, in the inner peripheral surface, described of the exhaust pipe
The coupling part of exhaust pipe and the processing chamber, the vacuum pump and the exhaust pipe is coated with polytetrafluoroethylene (PTFE)
Film.
The exhaust pipe of semiconductor manufacturing apparatus according to the present utility model, downtake pipe, second exhaust pipe and
It is the inner peripheral surface of third exhaust pipe, the outlet port of the processing chamber, the suction inlet of the vacuum pump and outlet, described useless
The air inlet and exhaust outlet of Flash Gas Compression Skid System are coated with polytetrafluoroethylene film.
The exhaust pipe of semiconductor manufacturing apparatus according to the present utility model is filled in the vacuum pump and the exhaust-gas treatment
The internal pipeline set is coated with polytetrafluoroethylene film.
The utility model has the following effects that.
The exhaust pipe of emission-control equipment according to the present utility model, the vacuum pump and exhaust gas of the emission-control equipment
Processing unit is set to the exhaust pipe, and is connected respectively with the exhaust pipe, the exhaust pipe with it is described
The coupling part of processing chamber, the vacuum pump and the exhaust pipe, is provided with annular component, can reduce in vacuum pump
With the accumulation degree for the powder particle accumulated in the exhaust pipe of exhaust gas processing device, so as to reduce attendant equipment (vacuum
Pump and exhaust gas processing device etc.) failure rate, and be able to extend the effect in preventive maintenance period.
The exhaust pipe of vacuum pump and exhaust gas processing device according to the present utility model, can prevent powder to the maximum extent
Particle packing is in the exhaust pipe of vacuum pump and exhaust gas processing device, so as to keep the emission effect of technology waste gas maximized
Effect.
The exhaust pipe of vacuum pump and exhaust gas processing device according to the present utility model, due to improving the fortune of attendant equipment
Rate of rotation and reduce its failure rate, and extend the preventive maintenance period, therefore can reduce the maintenance cost of above-mentioned apparatus
And the expense generated because frequently replacing above-mentioned apparatus, so as to improve the qualification rate of wafer, and it can reduce production
The effect of cost.
In addition, vacuum pump and emission-control equipment are not in break down before carrying out preventive maintenance to main equipment
(for example, line clogging) and the phenomenon that non-periodically cleaning need to be carried out.
Detailed description of the invention
Fig. 1 is the figure for being diagrammatically denoted by the structure of chemical vapor depsotition equipment in the prior art.
Fig. 2 is to indicate dust particles in the enlarged diagram of the inside discharge process of exhaust pipe.
Fig. 3 is the figure for being diagrammatically denoted by the structure of the exhaust treatment system of an embodiment of the utility model.
Fig. 4 is to indicate that the coupling part of two exhaust pipes of an embodiment of the utility model is provided with annular component
Cross-sectional view.
Fig. 5 is to indicate that the coupling part of two exhaust pipes of another embodiment of the utility model is provided with annular component
Cross-sectional view.
Fig. 6 is to indicate that the inner peripheral surface of exhaust pipe is provided with the cross-sectional view of the structure of internal lining pipe.
Fig. 7 is to indicate to be coated with the cross-sectional view of the structure of polytetrafluoroethylene film in the inner peripheral surface of exhaust pipe.
Specific embodiment
Hereinafter, the exhaust pipe of the exhaust treatment system of an embodiment of the utility model is described in detail referring to attached drawing.For
Those skilled in the art is set to be best understood from the utility model, the partial component of the application is amplified in the accompanying drawings shows.
Fig. 3 is the figure for being diagrammatically denoted by the structure of exhaust treatment system 100 of an embodiment of the present invention.
The exhaust treatment system 100 of the utility model is for example applicable to semiconductor manufacturing apparatus, the semiconductors manufacture
Device can include: chemical vapor depsotition equipment 30 carries out semiconductor machining work with processing chamber in the processing chamber
Skill；Exhaust treatment system 100 is used to handle the technology waste gas in the processing chamber.
The exhaust treatment system 100 specifically includes that vacuum pump 10, is used to that the processing chamber to be made to form negative pressure to inhale
Walk the technology waste gas in the processing chamber；Emission-control equipment 20 is connected with the vacuum pump, and to from described true
The process gas of 10 supply of sky pump carries out various processing；Exhaust pipe is used to make the processing chamber and the vacuum pump 10
Connection.The exhaust pipe includes: center connecting tube 111, is used for discharge technology exhaust gas, the center connecting tube 111 it is interior
Circumferential surface is in contact with the technology waste gas containing dust particles；Shell 2 is heated, inner circumferential surface is tightly attached to the center connecting tube 111
Outer peripheral surface, and formed by the good material of thermal conductivity；Connecting elements (annular component 40), it is circular in configuration, and set
It is placed in the both side ends of the center connecting tube 111；And heater (not shown), it is used to heat the heating shell 2.
In the prior art, the exhaust pipe of vacuum pump 10 and emission-control equipment 20 is mainly by stainless steel (SUS) material
It constitutes.In addition, as the structure for preventing the exhaust pipe of technology waste gas blocking emission-control equipment 20, by (not shown)
Heater heats the heating shell 2, to make the center connecting tube 111 being in contact with the heating shell 2 keep advising
Determine temperature, and with gas (for example, air, steam etc.) or liquid (for example, water, chemical solution etc.) to the center connecting tube
111 are purged or are rinsed, and thus removal is attached to the powder particle of the inner peripheral surface of the center connecting tube 111.
The vacuum pump 10 of first embodiment according to the present utility model and the center connecting tube 111 of emission-control equipment 20,
The center connecting tube 111 is made of material non-stick, for example, polytetrafluoroethylene (PTFE).
Polytetrafluoroethylene (PTFE) (Polytetrafluoroethylene；Also referred to as Teflon (Teflon)) it is by tetrafluoro second
High-molecular compound made of alkene is aggregated, have excellent chemical stability, corrosion resistance, leakproofness, high lubrication and non-stickiness,
Electrical insulating property and ageing resistance.
Due to polytetrafluoroethylene (PTFE) have excellent chemical stability, as tetrafluoroethene it is aggregated made of center connect
Pipe 111 will not be chemically reacted with technology waste gas；Polytetrafluoroethylene (PTFE) have high lubrication and non-stickiness, therefore powder particle be not easy it is attached
In the inner peripheral surface of center connecting tube 111, so that technology waste gas is easy to be siphoned away by emission-control equipment.Therefore, by by center
Connecting tube 111 is made of polytetrafluoroethylene (PTFE) material, and the center connecting tube 111 for be capable of vacuum pump and emission-control equipment is not easy to produce
Raw blocking, thus when saving the scavenger of center connecting tube 111, and improve the operating week of chemical vapor depsotition equipment
Phase.
As shown in figure 3, the center connecting tube 111 includes: the first connecting tube 101, one end and the chemical vapor deposition
The outlet port of product equipment 30 (specially processing chamber) is connected, and the suction inlet 11 of the other end and the vacuum pump 10；
Second connecting tube 102 is used to that the vacuum pump 10 to be made to be connected with the emission-control equipment 20, and second connection
One end of pipe 102 is connected with the outlet 12 of the vacuum pump, and the air inlet of the other end and the emission-control equipment 20
21 are connected；Third connecting tube 103, one end are connected with the exhaust outlet 22 of the emission-control equipment 20.
Successively pass through first connecting tube 101, institute from the technology waste gas of the discharge of the chemical vapor depsotition equipment 30
Vacuum pump 10, second connecting tube 102, the emission-control equipment 20 and the third connecting tube 102 are stated, and in institute
It states emission-control equipment 20 and carries out various processing, be discharged to from the exhaust gas from the other end of the third connecting tube 103 later
The outside of reason system 100.Herein, according to circumstances, the vacuum pump 10 can be set in the downstream of the emission-control equipment 20.
The vacuum pump 10 can use the general vacuum pump of this field, and the emission-control equipment 20 is also possible to ability
The common emission-control equipment in domain.Pipeline in the inside for being set to the vacuum pump 10 and the emission-control equipment 20
In, the pipeline being directly in contact with technology waste gas can be made of polytetrafluoroethylene (PTFE) material, and thus, it is possible to prevent in technology waste gas
Powder particle be attached to the vacuum pump 10 and the emission-control equipment 20 internal pipeline inner surface.Therefore, can
Increase service life and the preventive maintenance period of the vacuum pump 10 and the emission-control equipment 20.
The suction inlet 11 and outlet 12 of the vacuum pump 10 and the air inlet 21 of the emission-control equipment 20 and row
Port 22 can also be made of polytetrafluoroethylene (PTFE) material, be perhaps provided with the annular component 40 or can be coated polytetrafluoro
Vinyl film.When first connecting tube 101, second connecting tube 102 and the third connecting tube 103 are connected to institute
State vacuum pump 10 suction inlet 11 and outlet 12 and the emission-control equipment 20 air inlet 21 and exhaust outlet 22 when, can
To be connected using common bonding agent, or can be connected with the compression bonding method of high temperature and pressure, but the utility model is not
It is limited to this, as long as can make to combine securely between the component being made of polytetrafluoroethylene (PTFE) material, so that it may use this field
Any known method.
Fig. 4 is to indicate that the coupling part of two exhaust pipes 101,102 of an embodiment of the utility model is provided with ring
The cross-sectional view of shape component；Fig. 5 is the coupling part for indicating two exhaust pipes 101,102 of another embodiment of the utility model
It is provided with the cross-sectional view of annular component.
Ring (Ring) the shape component 40 being made of polytetrafluoroethylene (PTFE) material can be set (covering) and exist: the chemical vapor deposition
Coupling part between the outlet port of processing chamber and one end of first connecting tube 101 of product equipment 30；Described
Coupling part between the other end of one connecting tube 101 and the suction inlet 11 of the vacuum pump 10；The discharge of the vacuum pump 10
The coupling part of one end between mouth 12 and second connecting tube 102；The other end of second connecting tube 102 and described useless
Coupling part between the air inlet 21 of Flash Gas Compression Skid System 20；And the exhaust outlet 22 and described of the emission-control equipment 20
Coupling part between three connecting tubes 103.
As shown in Figure 4, Figure 5, the covering of annular component 40 is not the coupling part (yin being made of polytetrafluoroethylene (PTFE) material
Shadow part) S.The annular component 40 is set to the adhesive portion that the pipeline that two are made of polytetrafluoroethylene (PTFE) material is connected
Point or high temperature crimping and the part that is connected, be not by gathering thus, it is possible to prevent the powder particle in technology waste gas to be attached to
The above-mentioned coupling part that tetrafluoroethene material is constituted, so as to further decrease the accumulation degree of powder particle.This is, in order to
The position that dust particles may be accumulated in the inside of the exhaust pipe 1 of the utility model is reduced to the maximum extent.
In an embodiment of the utility model, the thickness of the annular component 40 is less than the center connecting tube 111
Thickness, in order to prevent to the maximum extent sedimentating dust particle packing the annular component 40 and the center connecting tube 111 it
Between, step is not formed between the annular component 40 and the center connecting tube 111.Preferably, the annular component 40 is interior
Circumferential surface and the inner peripheral surface of the center connecting tube 111 form identical face.
Fig. 6 is to indicate that the inner peripheral surface of exhaust pipe 211 is provided with the cross-sectional view of the structure of internal lining pipe 223,224,225.
The vacuum pump 10 of second embodiment according to the present utility model and the exhaust pipe 211 of emission-control equipment 20, institute
Stating exhaust pipe 211 can also be made of stainless steel material in the prior art, and in the inner peripheral surface of the exhaust pipe 211
It is provided with the internal lining pipe 222 being made of polytetrafluoroethylene (PTFE) material.The internal lining pipe 222 is set to the vacuum pump 10 and described useless
The inner peripheral surface of the pipeline being in contact with technology waste gas in Flash Gas Compression Skid System 20 and the inner peripheral surface of exhaust pipe 211.
The internal lining pipe 222 includes: the first internal lining pipe 223, is set to the inner peripheral surface of first connecting tube 101；The
Two internal lining pipes 224 are set to the inner peripheral surface of second connecting tube 102；Third internal lining pipe 225 is set to the third
The inner peripheral surface of connecting tube 103.
It is identical with the first embodiment, is provided in the coupling part of two internal lining pipes 222 and is made of polytetrafluoroethylene (PTFE) material
Annular component 40.The setting position of the annular component 40 and the annular component 40 in first embodiment, setting method and
Played the role of being identical, therefore, omits its repeated explanation herein.
Fig. 7 is to indicate to be coated with the cross-sectional view of the structure of polytetrafluoroethylene film 333 in the inner peripheral surface of exhaust pipe 311.
The vacuum pump 10 of 3rd embodiment according to the present utility model and the exhaust pipe 311 of emission-control equipment 20, institute
Stating exhaust pipe 311 can also be made of stainless steel material in the prior art, and in the inner circumferential of the exhaust pipe 311
The internal pipeline in face, the internal pipeline of the vacuum pump 10 and the emission-control equipment 20 coats polytetrafluoroethylene film
333, the degree of adhesion of powder particle is thus reduced to the maximum extent.According to the center connecting tube 111 of exhaust treatment system 100
Diameter, discharge rate of technology waste gas etc. can freely design the coating thickness of the polytetrafluoroethylene film.
In addition, due to directly in the end of the exhaust pipe 311 and the vacuum pump 10 and emission-control equipment 20
Coupling part between each port coats polytetrafluoroethylene film 333, accordingly it is also possible to be not provided in above-described embodiment by
Still according to the actual situation, the annular component 40 also can be set in the annular component 40 that polytetrafluoroethylene (PTFE) material is constituted.
More than, the vacuum pump of the utility model and the exhaust pipe of emission-control equipment is described in detail, is not departing from this
In the range of the technical idea of utility model, those skilled in the art are according to the disclosure in the application to above embodiment
Change, replace etc. and can be realized other embodiments, it is understood, however, that these belong to this application claims
Range.
Claims (10)
1. a kind of semiconductor manufacturing apparatus comprising carry out the processing chamber of semiconducter process, for aspirating the technique
The vacuum pump of technology waste gas in chamber and exhaust pipe for connecting the processing chamber with the vacuum pump, it is special
Sign is,
The exhaust pipe includes center connecting tube, the company heated shell and be set to two ends of the center connecting tube
Connection member,
The connecting elements covers coupling part between the processing chamber and the center connecting tube, the center connecting tube
Coupling part between the vacuum pump.
2. semiconductor manufacturing apparatus according to claim 1, which is characterized in that
The connecting elements is annular component,
The connecting elements cover the outlet port of the processing chamber end and the center connecting tube one end it
Between coupling part and the center connecting tube the other end and vacuum pump suction inlet end between connection
Part.
3. semiconductor manufacturing apparatus according to claim 1 or 2, which is characterized in that
The center connecting tube and the connecting elements are made of material non-stick.
4. semiconductor manufacturing apparatus according to claim 3, which is characterized in that
The material non-stick is polytetrafluoroethylene (PTFE).
5. semiconductor manufacturing apparatus according to claim 1 or 2, which is characterized in that
The thickness of the connecting elements is less than the thickness of the center connecting tube.
6. semiconductor manufacturing apparatus according to claim 1, which is characterized in that
The inner surface of the center connecting tube is provided with internal lining pipe.
7. semiconductor manufacturing apparatus according to claim 6, which is characterized in that
The connecting elements covers the connection of the end of the outlet port of the processing chamber and the one end of the internal lining pipe
Partially and the coupling part between the other end of the internal lining pipe and the vacuum pump.
8. semiconductor manufacturing apparatus according to claim 6 or 7, which is characterized in that
The connecting elements is annular component,
The internal lining pipe and the connecting elements are made of polytetrafluoroethylene (PTFE) material.
9. semiconductor manufacturing apparatus according to claim 1, which is characterized in that
Coupling part between the inner surface of the center connecting tube, the processing chamber and the center connecting tube and
Coupling part between the center connecting tube and the vacuum pump is coated with polytetrafluoroethylene film.
10. semiconductor manufacturing apparatus according to claim 1, which is characterized in that
Coupling part between the end of the outlet port of the processing chamber and the one end of the center connecting tube, with
And the coupling part between the end of the suction inlet of the other end and vacuum pump of the center connecting tube, it is coated with poly- four
Fluoroethylene film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920259494.3U CN209636314U (en) | 2019-02-28 | 2019-02-28 | The exhaust pipe of semiconductor manufacturing apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920259494.3U CN209636314U (en) | 2019-02-28 | 2019-02-28 | The exhaust pipe of semiconductor manufacturing apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN209636314U true CN209636314U (en) | 2019-11-15 |
Family
ID=68494878
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201920259494.3U Active CN209636314U (en) | 2019-02-28 | 2019-02-28 | The exhaust pipe of semiconductor manufacturing apparatus |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN209636314U (en) |
-
2019
- 2019-02-28 CN CN201920259494.3U patent/CN209636314U/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI810254B (en) | Apparatus for use with hydrogen radicals and method of using same | |
| JP6746730B2 (en) | Hot wall reactor with cooled vacuum containment vessel | |
| CN111621769A (en) | Exhaust duct of semiconductor manufacturing apparatus | |
| JPH03208889A (en) | Liquid source container | |
| CN105026612B (en) | Gas sleeve pipe for foreline plasma abatement system | |
| US20200408211A1 (en) | Device and Method for Evacuating a Chamber and Purifying the Gas Extracted From Said Chamber | |
| TWI766392B (en) | Deposition apparatus, deposition system, and forming method of semiconductor device | |
| TWI675434B (en) | Amalgamated cover ring | |
| CN209636314U (en) | The exhaust pipe of semiconductor manufacturing apparatus | |
| US8337619B2 (en) | Polymeric coating of substrate processing system components for contamination control | |
| JPH0339198B2 (en) | ||
| TW201422999A (en) | Semiconductor manufacturing apparatus having control function of powder generation | |
| TW202033263A (en) | Detoxifying apparatus, method for replacing piping section of detoxifying apparatus, and method for cleaning pipes of detoxifying apparatus | |
| CN113430644B (en) | Exhaust device and semiconductor device | |
| KR102218496B1 (en) | Trap apparatus and exhaust system using the same, and substrate processing apparatus | |
| US11661652B2 (en) | Wet cleaning inside of gasline of semiconductor process equipment | |
| JP6120288B2 (en) | Gas flow treatment equipment | |
| CN110094582A (en) | Flexibility piping and temperature control system | |
| JP2008311346A (en) | Semiconductor manufacturing apparatus, method of manufacturing semiconductor device, and seal member for use in the same | |
| CN208819848U (en) | Exhaust system and semiconductor equipment | |
| JP2022534050A (en) | Static discharge relief tube segment and fluid circuit including static discharge relief tube segment | |
| JPH08218174A (en) | Treating device | |
| JP2004324723A (en) | Pipe connection structure, and seal member with built-in heater | |
| JP7194660B2 (en) | Exhaust gas treatment equipment | |
| KR20080022711A (en) | Exhaust system of apparatus for manufacturing semiconductor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |