CN209592047U - Fast recovery diode and electronic equipment - Google Patents
Fast recovery diode and electronic equipment Download PDFInfo
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- CN209592047U CN209592047U CN201920442031.0U CN201920442031U CN209592047U CN 209592047 U CN209592047 U CN 209592047U CN 201920442031 U CN201920442031 U CN 201920442031U CN 209592047 U CN209592047 U CN 209592047U
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- fast recovery
- recovery diode
- epitaxial layer
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Abstract
The utility model provides fast recovery diode and electronic equipment.The fast recovery diode includes: the first conductivity type substrate；First conductive type epitaxial layer, the first conductive type epitaxial layer are arranged on the upper surface of the first conductivity type substrate；Second conduction type anode region, the second conduction type anode region are arranged on the upper surface of the first conductive type epitaxial layer；At least one groove, at least one groove passes through the second conduction type anode region from the surface of the second conduction type anode region and extends in the first conductive type epitaxial layer, or extends from the surface of the first conductive type epitaxial layer into the first conductive type epitaxial layer.The switching frequency of the fast recovery diode of above structure is higher as a result, and switch softness is preferable；And the manufacture craft of fast recovery diode is simpler, cost of manufacture is lower.
Description
Technical field
The utility model relates to diode technologies fields, specifically, being related to fast recovery diode and electronic equipment.
Background technique
Fast recovery diode (FRD) has high-frequency, high voltage, high current, low as power semiconductor device of new generation
It the advantages that loss and low EMI, is widely used in power electronic circuit, with three end high frequency power switching device (such as function
Rate MOSFET, IGBT etc.) it has been used cooperatively clamped and high-frequency rectification effect of continuing a journey.In recent years, it with the development of power electronics,
Higher working frequency is sought, and the preferably fast recovery diode of switch softness, and the service life of carrier and distribution are to FRD
Switching frequency and switch softness have important influence.
At present mainly by heavy metal doping, the techniques such as electron irradiation and Localized Lifetime Control control excess carriers
Service life improve working frequency to reduce the turn-off time.But all there is apparent defect in above-mentioned life control means: by
The device that Electron irradiation technology obtains reduces the softness of switch, and the technique although improving switch operating frequency simultaneously
It is formed by that defect is unstable, is unfavorable for the long-time service of device；The device adulterated using heavy metal, point of the heavy metal in device
Cloth is uncontrollable；Using the device of the Localized Lifetime Control of the formation such as proton and He isotopic geochemistry, switch operating frequency is being improved
While, the switch softness of optimised devices, but the energy of process requirement injection is high, at high cost, technology difficulty is not easy greatly reality
It is existing.
Research accordingly, with respect to fast recovery diode needs to be goed deep into.
Utility model content
The utility model is intended to solve at least some of the technical problems in related technologies.For this purpose, this reality
It is to propose a kind of there is higher working frequency, good switch softness, be easy to production or be fabricated to a novel purpose
The fast recovery diode of this low advantage.
In the one aspect of the utility model, the utility model provides a kind of fast recovery diode.It is practical new according to this
The embodiment of type, the fast recovery diode include: the first conductivity type substrate；First conductive type epitaxial layer, described first
Conductive type epitaxial layer is arranged on the upper surface of first conductivity type substrate；Second conduction type anode region, described
Two conduction type anode regions are arranged on the upper surface of first conductive type epitaxial layer；The ditch of at least one inner wall coarse
Slot, at least one described groove is through second conduction type anode region and extends to first conductive type epitaxial layer
In, or extend into first conductive type epitaxial layer from the upper surface of first conductive type epitaxial layer.Groove as a result,
The coarse meeting of inner wall so that inner wall there are a large amount of defects, which can form stable complex centre, as Localized Lifetime
Control zone, during fast recovery diode Reverse recovery, complex centre and minority carrier recombination, and then reduce a small number of carry
In the service life for flowing son, Localized Lifetime Control is achieved the purpose that with this, and then effectively improves the switching frequency of fast recovery diode and open
Close softness；And can by control groove quantity and depth come control complex centre number；And above by formation
Groove forms complex centre, without being injected using energetic ion, so that the manufacture craft of fast recovery diode is simpler, production
Cost is lower.
In the another aspect of the utility model, the utility model provides a kind of electronic equipment.It is according to the present utility model
Embodiment, the electronic equipment include mentioned-above fast recovery diode.The electronic equipment has faster reversed extensive as a result,
Multiple time, biggish recovery softness, longer service life and lower cost of manufacture.Those skilled in the art can manage
Solution, the electronic equipment have all feature and advantage of mentioned-above fast recovery diode, and this is no longer going to repeat them.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of fast recovery diode in the utility model one embodiment；
Fig. 2 is the structural schematic diagram of fast recovery diode in another embodiment of the utility model；
Fig. 3 is the structural schematic diagram of fast recovery diode in another embodiment of the utility model；
Fig. 4 is the structural schematic diagram of fast recovery diode in another embodiment of the utility model；
Fig. 5 is the structural schematic diagram of fast recovery diode in another embodiment of the utility model；
Fig. 6 is the structural schematic diagram of fast recovery diode in another embodiment of the utility model；
Fig. 7 is the structural schematic diagram of fast recovery diode in another embodiment of the utility model；
Fig. 8 is the structural schematic diagram of fast recovery diode in another embodiment of the utility model；
Fig. 9 is the structural schematic diagram of fast recovery diode in another embodiment of the utility model；
Figure 10 is the structural schematic diagram of fast recovery diode in another embodiment of the utility model；
Figure 11 is the structural schematic diagram of fast recovery diode in another embodiment of the utility model；
Figure 12 is the structural schematic diagram of fast recovery diode in another embodiment of the utility model.
Specific embodiment
The embodiments of the present invention are described below in detail.The embodiments described below is exemplary, and is only used for explaining
The utility model, and should not be understood as limiting the present invention.Particular technique or condition are not specified in embodiment, according to
Technology or conditions described in document in the art are carried out according to product description.
In the one aspect of the utility model, the utility model provides a kind of fast recovery diode.It is practical new according to this
The embodiment of type, referring to Figures 1 and 2, fast recovery diode include: the first conductivity type substrate 10；First conduction type extension
Layer 20, the first conductive type epitaxial layer 20 is arranged on the upper surface of the first conductivity type substrate 10；Second conduction type anode
Area 30, the second conduction type anode region 30 are arranged on the upper surface of the first conductive type epitaxial layer 20；At least one inner wall is thick
The groove 40 of rough groove 40, at least one inner wall coarse through the second conduction type anode region 30 and extends to the first conductive-type
In type epitaxial layer 20 (as shown in Figure 1), or from the upper surface of the first conductive type epitaxial layer 20 to the first conductive type epitaxial layer
Extend (as shown in Figure 2) in 20.So that inner wall is there are a large amount of defect, which can be with shape for the coarse meeting of trench wall as a result,
At stable complex centre, as Localized Lifetime Control area, during fast recovery diode Reverse recovery, complex centre with
Minority carrier recombination, and then the service life of minority carrier is reduced, Localized Lifetime Control is achieved the purpose that with this, and then effectively mention
The switching frequency and switch softness of high fast recovery diode, are effectively ensured the reliability and stability of fast recovery diode circuit；
And can by control groove quantity and depth come control complex centre number；And it is formed above by groove is formed
Complex centre, without being injected using energetic ion, so that the manufacture craft of fast recovery diode is simpler, cost of manufacture is more
It is low.
It should be noted that the first conduction type herein and the second conduction type do not have special limitation requirement, wherein
One conductive for N-type, then another is P-type conduction, for example the first conduction type is that N-type is conductive, then the second conduction type is p-type
It is conductive.
The specific material of embodiment according to the present utility model, the first conductivity type substrate and the first conductive type epitaxial layer
There is no limit requiring, those skilled in the art can flexible choice according to actual needs, for example, in some realities of the utility model
It applies in example, the first conductivity type substrate and the first conductive type epitaxial layer can be to be formed by silicon materials.Thus, it is possible to improve
The service performance of fast recovery diode.Embodiment according to the present utility model, for the switch softness etc. for improving fast recovery diode
Performance, the ion doping concentration of the first conductivity type substrate are greater than the ion doping concentration of the first conductive type epitaxial layer, tool
The doping concentration of body is there is no limit requiring, those skilled in the art's flexible choice according to actual needs.
Embodiment according to the present utility model, the forming method of the first conductivity type substrate and the first conductive type epitaxial layer
Also there is no limit requiring, those skilled in the art can flexible choice conventional technical means according to actual needs, for example, shape
At the first conductivity type substrate, the epitaxial layer of required doping concentration is then obtained by the method for extension.
Embodiment according to the present utility model, the first conductive type epitaxial layer be single layer structure or the doping that stacks gradually from
The different multilayered structure of sub- concentration.Those skilled in the art can be according to the requirement and ditch of fast recovery diode as a result,
The structure of first conductive type epitaxial layers of actual conditions flexible choice such as the setting position of slot.
Embodiment according to the present utility model, the second conduction type anode region intermediate ion doping concentration there is no limit require,
Those skilled in the art's flexible choice according to actual needs.The forming method of second conduction type anode region is not also special
It is required that those skilled in the art use conventional technical means, such as by the way that Doped ions are injected into the first conduction type
In epitaxial layer, then by high temperature, the Doped ions injected during high temperature diffuse to form the second conduction type anode region.
Embodiment according to the present utility model, groove 40 can also be only arranged in the second conduction type anode region 30,
In some instances, as shown in figure 3, the bottom of groove 40 is located at bottom and the second conduction of the second conduction type anode region 30
The intersection of the upper surface of type epitaxial layer 20, the groove of the structure can also have a large amount of lack due to inner wall coarse as a result,
It falls into, which can form stable complex centre, as Localized Lifetime Control area, in the mistake of fast recovery diode Reverse recovery
Cheng Zhong, complex centre and minority carrier recombination, and then the service life of minority carrier is reduced, Localized Lifetime Control is reached with this
Purpose, and then effectively improve the switching frequency and switch softness of fast recovery diode.
Embodiment according to the present utility model, if groove 40 is to pass through second from the surface of the second conduction type anode region 30
Conduction type anode region 30 simultaneously extends in the first conductive type epitaxial layer 20 (shown in Fig. 1), or is provided only on the second conductive-type
In type anode region 30 when (as shown in Figure 3), the switch of fast recovery diode can be not only improved by the formation in complex centre
Frequency and improvement switch softness, can also be by adjusting the ratio of 30 injection region of width and the second conduction type anode region of groove 40
Example to reduce by 30 injection efficiency of the second conduction type anode region, and then improves the switching frequency of fast recovery diode.
Embodiment according to the present utility model controls Localized Lifetime control by controlling the depth of groove 40 such as Fig. 1~3
The position in area processed, to play the role of Localized Lifetime Control, so those skilled in the art can be accurate according to actual needs
Control groove 40 in the second conduction type anode region 30 and/or the depth of the first conductive type epitaxial layer 20, come with this accurate
Control Localized Lifetime Control area position.Thus, it is possible to accurately and efficiently shorten the reverse recovery time of fast recovery diode,
Improve the switching frequency of fast recovery diode.
Embodiment according to the present utility model, the depth of groove and setting position are the distribution sum numbers according to minority carrier
Amount determination, the depth of groove is deeper, and the complex centre of formation is more, and then can be answered with more minority carriers
It closes, the service life of minority carrier can so be effectively reduced；If minority carrier integrated distribution in the second conduction type anode region,
Groove can be then provided only in the second conduction type anode region, and according to the quantity of minority carrier, determine the depth of groove,
If minority carrier integrated distribution can make groove from second in the second conduction type anode region and the first conductive type epitaxial layer
The surface of conduction type anode region passes through the second conduction type anode region and extends in the first conductive type epitaxial layer, and according to
The quantity of minority carrier determines the depth of groove.
Embodiment according to the present utility model, for the quantity of groove there is no limit requirement, those skilled in the art can basis
The actual conditions flexible design such as the distribution of minority carrier and quantity, for example, can be 2,3,4,5,6,7,8
It is a etc..
Embodiment according to the present utility model, the roughness of trench wall does not have special limitation requirement, since inner wall is thick
Rugosity is bigger, and the defect of inner wall is bigger, that is, the complex centre quantity formed is more, so those skilled in the art can be according to few
The quantity of number carrier and distribution and mentioned above principle, the roughness of flexible design trench wall.Reality according to the present utility model
Example is applied, to form the groove that inner wall has certain roughness, groove can be prepared by etching technics.It not only makes as a result,
Make simple process maturation, and can effectively obtain the groove of inner wall coarse by etching technics, so that trench wall has greatly
The groove of defect is measured, and then forms largely stable complex centre.
Embodiment according to the present utility model, the shape of groove are not particularly limited requirement, and those skilled in the art can be with
The shape of flexible design groove according to actual needs.In some embodiments of the utility model, the shape in the section of groove is selected
From at least one of rectangle (as shown in Figures 1 to 3) and U-shaped, those skilled in the art can also by change engraving method with
And the specified chemical solution that etching is used obtains groove structure of different shapes.Groove structure is unrestricted as a result, can satisfy
A variety of different design requirements.
Embodiment according to the present utility model, referring to Fig. 4, Fig. 5 and Fig. 6, fast recovery diode further include: oxide layer 50,
Oxide layer 50 is arranged on the inner wall of groove.Thus, it is possible to by the first conductive type epitaxial layer and/or the second conduction type anode
Area and the subsequent metal material isolated insulation filled in the trench are arranged, and prevent diode leakage, and then guarantee two poles of fast recovery
The good service performance of pipe.
Embodiment according to the present utility model is filled with metal material 60 or half referring to Fig. 7, Fig. 8 and Fig. 9 in groove 40
Conductor material 90.Those skilled in the art can be according in the actual conditions flexible choice grooves such as the setting position of groove as a result,
Packing material, for example, can choose appointing in filling semiconductor material 90 and metal material 60 in groove in figures 7 and 9
One kind in fig. 8 in groove, can so be convenient for the implementation of technique with filling semiconductor material 90.
There is no limit want the specific type of embodiment according to the present utility model, above-mentioned metal material and semiconductor material
It asks, for example, metal material can be aluminium (Al), silico-aluminum (ALSI), sial copper alloy (ALSICU) or other contacts
Good conductive material, then conductor material can be the semiconductor materials such as monocrystalline silicon or polysilicon.
According to the novel embodiment of this reality, the step of filling metal material, can be with are as follows: is forming the second conduction type anode
It is etched after area and forms groove, flood metal material is then formed by sputtering or evaporation, removed again by etching technics later
Metal material except groove；The step of filling semiconductor material, can be with are as follows: the shape after forming the first conductive type epitaxial layer
At groove, the semiconductor materials such as monocrystalline silicon or polysilicon are subsequently filled, form second by extension or the method for bonding later
Conduction type anode region.
Embodiment according to the present utility model, referring to Fig.1 0, Figure 11 and Figure 12, fast recovery diode further include: back-side gold
Belong to layer 70, metal layer on back 70 is arranged on the lower surface of the first conductivity type substrate 10；Front metal layer 80, front metal layer
80 are arranged on the upper surface of the second conduction type anode region 30.Thus, it is possible to improve the service performance of fast recovery diode.
Embodiment according to the present utility model can setting according to groove for the production process for reducing fast recovery diode
The fill process process of seated position selection metal material: in some embodiments of the utility model, 0 and Figure 11 referring to Fig.1, ditch
Slot 40 is through the second conduction type anode region 30 and extends in the first conductive type epitaxial layer 20 or groove 40 is provided only on the
When in two conduction type anode regions 30, the metal material 40 filled in front metal layer 80 and groove 40 at this time is disposed adjacent, therefore
And front metal layer 80 and metal material 60 in groove can synchronize formed, and then process flow can be shortened.
Embodiment according to the present utility model, forms the material of metal layer on back also there is no limit requiring, art technology
Personnel can flexible choice according to actual needs.In some embodiments of the utility model, the material of metal layer on back is formed
Including but not limited to chromium, nickel, silver, chrome-nickel, chromium silver alloy or chromium bazar metal etc..
In the another aspect of the utility model, the utility model provides a kind of electronic equipment.It is according to the present utility model
Embodiment, the electronic equipment include mentioned-above fast recovery diode.The electronic equipment has faster reversed extensive as a result,
Multiple time, biggish recovery softness, longer service life and lower cost of manufacture.Those skilled in the art can manage
Solution, the electronic equipment have all feature and advantage of mentioned-above fast recovery diode, and this is no longer going to repeat them.
Embodiment according to the present utility model, there is no limit those skilled in the art for the specific type of above-mentioned electronic equipment
Can flexible choice according to actual needs, for example can be mobile phone, automobile etc..It will be understood by those skilled in the art that above-mentioned electricity
Sub- equipment further includes structure or component essential to conventional electronic device in addition to mentioned-above fast recovery diode
In the description of this specification, reference term " one embodiment ", " some embodiments ", " example ", " specifically show
The description of example " or " some examples " etc. means specific features, structure, material or spy described in conjunction with this embodiment or example
Point is contained at least one embodiment or example of the utility model.In the present specification, to the schematic table of above-mentioned term
It states and is necessarily directed to identical embodiment or example.Moreover, particular features, structures, materials, or characteristics described can be with
It can be combined in any suitable manner in any one or more of the embodiments or examples.In addition, without conflicting with each other, this field
Technical staff can by the feature of different embodiments or examples described in this specification and different embodiments or examples into
Row combination and combination.
Although the embodiments of the present invention have been shown and described above, it is to be understood that above-described embodiment is
Illustratively, it should not be understood as limiting the present invention, those skilled in the art are in the scope of the utility model
Inside it can make changes, modifications, alterations, and variations to the above described embodiments.
Claims (7)
1. a kind of fast recovery diode characterized by comprising
First conductivity type substrate；
The upper table of first conductivity type substrate is arranged in first conductive type epitaxial layer, first conductive type epitaxial layer
On face；
The upper of first conductive type epitaxial layer is arranged in second conduction type anode region, second conduction type anode region
On surface；
The groove of at least one inner wall coarse, at least one described groove is through second conduction type anode region and extends to
In first conductive type epitaxial layer, or from the upper surface of first conductive type epitaxial layer to first conduction type
Extend in epitaxial layer.
2. fast recovery diode according to claim 1, which is characterized in that the shape in the section of the groove is selected from rectangle
At least one of with U-shaped.
3. fast recovery diode according to claim 1, which is characterized in that further include: oxide layer, the oxide layer setting
On the inner wall of the groove.
4. fast recovery diode according to claim 1, which is characterized in that first conductive type epitaxial layer is single layer
Structure or the different multilayered structure of the Doped ions concentration stacked gradually.
5. fast recovery diode according to any one of claims 1 to 4, which is characterized in that be filled in the groove
Metal material or semiconductor material.
6. fast recovery diode according to claim 5, which is characterized in that further include:
Metal layer on back, the metal layer on back are arranged on the lower surface of first conductivity type substrate；
Front metal layer, the front metal layer are arranged on the upper surface of second conduction type anode region.
7. a kind of electronic equipment, which is characterized in that including fast recovery diode according to any one of claims 1 to 6.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920442031.0U CN209592047U (en) | 2019-04-01 | 2019-04-01 | Fast recovery diode and electronic equipment |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920442031.0U CN209592047U (en) | 2019-04-01 | 2019-04-01 | Fast recovery diode and electronic equipment |
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| Publication Number | Publication Date |
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| CN209592047U true CN209592047U (en) | 2019-11-05 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116454119A (en) * | 2023-06-15 | 2023-07-18 | 广东巨风半导体有限公司 | Fast recovery diode and preparation method thereof |
-
2019
- 2019-04-01 CN CN201920442031.0U patent/CN209592047U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116454119A (en) * | 2023-06-15 | 2023-07-18 | 广东巨风半导体有限公司 | Fast recovery diode and preparation method thereof |
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| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20191227 Address after: 518119 1 Yanan Road, Kwai Chung street, Dapeng New District, Shenzhen, Guangdong Patentee after: SHENZHEN BYD MICROELECTRONICS Co.,Ltd. Address before: BYD 518118 Shenzhen Road, Guangdong province Pingshan New District No. 3009 Co-patentee before: SHENZHEN BYD MICROELECTRONICS Co.,Ltd. Patentee before: BYD Co.,Ltd. |
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| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee after: BYD Semiconductor Co.,Ltd. Address before: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee before: BYD Semiconductor Co.,Ltd. Address after: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee after: BYD Semiconductor Co.,Ltd. Address before: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee before: SHENZHEN BYD MICROELECTRONICS Co.,Ltd. |