CN209571414U - Interconnection structure - Google Patents
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- CN209571414U CN209571414U CN201920511807.XU CN201920511807U CN209571414U CN 209571414 U CN209571414 U CN 209571414U CN 201920511807 U CN201920511807 U CN 201920511807U CN 209571414 U CN209571414 U CN 209571414U
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- 239000007769 metal material Substances 0.000 claims abstract description 57
- 229910052751 metal Inorganic materials 0.000 claims abstract description 37
- 239000002184 metal Substances 0.000 claims abstract description 37
- 239000004065 semiconductor Substances 0.000 claims abstract description 17
- 238000002161 passivation Methods 0.000 claims abstract description 16
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 20
- 239000010949 copper Substances 0.000 claims description 20
- 229910052802 copper Inorganic materials 0.000 claims description 20
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 14
- 229910052725 zinc Inorganic materials 0.000 claims description 14
- 239000011701 zinc Substances 0.000 claims description 14
- 239000000956 alloy Substances 0.000 claims description 13
- 229910001369 Brass Inorganic materials 0.000 claims description 8
- 239000010951 brass Substances 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 8
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 229910052738 indium Inorganic materials 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052793 cadmium Inorganic materials 0.000 claims description 3
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- 229910017052 cobalt Inorganic materials 0.000 claims description 3
- 239000010941 cobalt Substances 0.000 claims description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 229910052735 hafnium Inorganic materials 0.000 claims description 3
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 239000011133 lead Substances 0.000 claims description 3
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052758 niobium Inorganic materials 0.000 claims description 3
- 239000010955 niobium Substances 0.000 claims description 3
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 3
- 229910052716 thallium Inorganic materials 0.000 claims description 3
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 239000011135 tin Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052720 vanadium Inorganic materials 0.000 claims description 3
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052726 zirconium Inorganic materials 0.000 claims description 3
- 150000002927 oxygen compounds Chemical class 0.000 claims 1
- 239000007788 liquid Substances 0.000 abstract description 16
- 238000007772 electroless plating Methods 0.000 abstract description 6
- 239000010410 layer Substances 0.000 description 127
- 238000000034 method Methods 0.000 description 12
- 238000005260 corrosion Methods 0.000 description 8
- 230000007797 corrosion Effects 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 229910045601 alloy Inorganic materials 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 239000002253 acid Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000002378 acidificating effect Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000006056 electrooxidation reaction Methods 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000002633 protecting effect Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910000928 Yellow copper Inorganic materials 0.000 description 1
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 239000003929 acidic solution Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910000365 copper sulfate Inorganic materials 0.000 description 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- UGWKCNDTYUOTQZ-UHFFFAOYSA-N copper;sulfuric acid Chemical compound [Cu].OS(O)(=O)=O UGWKCNDTYUOTQZ-UHFFFAOYSA-N 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000012217 deletion Methods 0.000 description 1
- 230000037430 deletion Effects 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005518 electrochemistry Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 230000009969 flowable effect Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910021426 porous silicon Inorganic materials 0.000 description 1
- 238000006722 reduction reaction Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- -1 which uses Substances 0.000 description 1
Abstract
The utility model relates to technical field of semiconductor device, provide a kind of interconnection mechanism of semiconductor devices.Wherein, the interconnection structure of semiconductor devices includes: dielectric layer；Metal interconnecting layer is set in dielectric layer, and metal interconnecting layer is made by the first metal material；Seed layer is set between dielectric layer and metal interconnecting layer, and seed layer has the first seed layer and second of sublayer, and the first seed layer is made by the first metal material, and second of sublayer is made by the second metal material that metal active is better than the first metal material.In the present invention; the seed layer of interconnection structure includes the first seed layer and second of sublayer; wherein the metal active of second of sublayer is better than the metal active of the first seed layer; to when carrying out electroless plating; by sacrificing second of sublayer; and form passivation layer in the first seed layer and protect the first seed layer, alleviate the first seed layer and is plated the phenomenon that liquid corrodes.
Description
Technical field
The utility model relates to technical field of semiconductor device, in particular to a kind of interconnection structure of semiconductor devices.
Background technique
With the development of semiconductor integrated circuit manufacturing technology, copper wiring technique has become post-channel interconnection work in chip manufacturing
The preparation of the mainstream technology of skill, copper conductor (metal interconnecting layer) uses chemical plating process substantially.
Before carrying out chemical plating process, it usually needs in the area deposition seed layer of copper conductor to be grown, later will
Silicon wafer with seed layer, which is immersed as cathode in acid copper-bath, carries out electroless plating, due to carrying out electroless plating
Plating solution acidic, therefore, when wafer is just immersed in electroplate liquid, copper seed layer will certainly be led by acid electroplating corrosion
Copper seed layer surface is caused to form copper seed layer deficient phenomena, so that copper can not give birth at deletion sites during subsequent electro-coppering
It is long, copper conductor cavity blemish is caused, the reliability of semiconductor devices is seriously affected.
Utility model content
In view of the above problem of the prior art, the utility model provides a kind of interconnection structure of semiconductor devices, this is mutually
Linking structure can prevent seed layer rotten in an acidic solution while keeping seed layer to cause the effect of wire metals growth
Erosion.
The utility model provides a kind of interconnection structure of semiconductor devices, comprising: dielectric layer；Metal interconnecting layer, setting
In in the dielectric layer, the metal interconnecting layer is made by the first metal material；Seed layer is set to the dielectric layer and described
Between metal interconnecting layer, the seed layer has the first seed layer and second of sublayer, and first seed layer is by described first
Metal material is made, and second of sublayer is made by the second metal material that metal active is better than first metal material.
Compared with prior art, in the utility model offer, the seed layer of interconnection structure includes the first seed layer and the
Two seed layers, wherein the metal active of second of sublayer is better than the metal active of the first seed layer, it is living when carrying out electroless plating
Property stronger second of sublayer can preferentially participate in reacting, inhibit reacting between the first seed layer and electroplate liquid.The device junction
Structure can alleviate the phenomenon that the first seed layer is plated corrosion, reduce the cavity blemish formed in metal interconnecting layer, it is ensured that gold
The quality for belonging to interconnection layer, improves the reliability of semiconductor devices.
Preferably, the surface of the seed layer is also formed with passivation layer.
By forming passivation layer on the surface of seed layer, electroplate liquid and seed layer can be deadened, prevents it from directly contacting, is risen
The effect of protection seed layer is arrived.
Further, preferably, the passivation layer is made by the oxide of second metal material.
The passivation layer as made from the oxide of the second metal material can be directly anti-by second of sublayer and acidic Bath
It should obtain, easily facilitate preparation.
In addition, preferably, first metal material is copper.
Further, preferably, second metal material be hafnium, aluminium, titanium, zirconium, vanadium, manganese, niobium, zinc, chromium, gallium, iron,
The combination of one or more of cadmium, indium, thallium, cobalt, nickel, molybdenum, tin, lead.
Further, preferably, second metal material is zinc.
In addition, preferably, the interconnection structure further include be arranged in the metal interconnecting layer side through-hole connection it is mutual
Line.
In addition, preferably, the seed layer is additionally arranged between the through-hole connection interconnection line and the dielectric layer.
In addition, preferably, it includes first metal material and second metal material that the seed layer, which uses,
Alloy material is made, and first seed layer and second of sublayer are configured to same phase.
By the way that the first seed layer and second of sublayer are configured to same phase, the first seed layer has phase with second of sublayer
Same interface, when the second metal material of second of sublayer aoxidizes to form passivation layer, which will cover the first seed simultaneously
The surface of layer, more efficiently the first seed layer and electroplate liquid barrier to come.
Further, preferably, the alloy material is brass.
Detailed description of the invention
Fig. 1-4 is each step of process flow that the interconnection structure of semiconductor devices is formed in an embodiment of the utility model
The schematic diagram of middle interconnection structure.
Description of symbols
1- substrate；1a- contact structures；2- dielectric layer；2a- interconnects line trenches；2b- through-hole；4- seed layer；The interconnection of 5- metal
Layer；5a- through-hole connects interconnection line.
Specific embodiment
With reference to the accompanying drawings of the specification, the utility model is described in further detail.It is schematically simple in attached drawing
Change shows the interconnection structure etc. of semiconductor devices.
The present embodiment provides firstly a kind of forming method of semiconductor devices, comprising the following steps:
It is shown in Figure 1, substrate 1 is provided, and form dielectric layer 2 on the base 1.
Substrate 1, which can be, to be formed with device architecture or is not formed the body silicon of device architecture, silicon-on-insulator (SOI),
It is also possible to be formed with device architecture or the germanium of device architecture, germanium silicon, GaAs or germanium on insulator is not formed.This reality
It applies in example, substrate 1 is to be formed with device (not shown), interlayer dielectric layer and the first intermetallic dielectric layer (not show in figure
Body silicon base out).Wherein, contact structures 1a is formed in interlayer dielectric layer, contact structures 1a is tungsten plug.
In some embodiments of the utility model, dielectric layer 2 can be interlayer dielectric layer (ILD), be also possible to metal
Between dielectric layer (IMD).In the present embodiment, dielectric layer 2 is the second intermetallic dielectric layer (IMD2).The material of dielectric layer 2 can be
(dielectric coefficient is big for silica, silicon nitride, silicon oxynitride, silicon oxide carbide, carbonitride of silicium or carbon silicon oxynitride, low k dielectric materials
In or be equal to 2.5, less than 3.9, such as porous silica or porous silicon nitride) or ultra-low k dielectric material (dielectric coefficient is less than
2.5, such as porous SiC OH).In the present embodiment, the material of the dielectric layer is silica；The formation process of the deielectric-coating
For fluid chemistry vapor deposition (Flowable Chemical Vapor Deposition, FCVD) technique, high-density plasma
Deposit one of (High Density Plasma, HDP) technique, plasma enhanced deposition technique or a variety of.
It is shown in Figure 2, through-hole 2b and interconnection line trenches 2a is formed in dielectric layer 2.
The formation of through-hole 2b and interconnection line trenches 2a can be specifically includes the following steps: form patterning on dielectric layer 2
The first photoresist layer；Using the first photoresist layer as exposure mask, using the first anisotropic dry etch process, etch media layer 2；
The first photoresist layer is removed, forms patterned second photoresist layer on dielectric layer 2；Using the second photoresist layer as exposure mask, adopt
With the second anisotropic dry etch process, etch media layer 2.
Shown in Figure 3, deposit forms seed layer 4 in through-hole 2b and interconnection line trenches 2a.
In some embodiments of the utility model, seed layer 4 can be made of the first seed layer and second of sublayer, the
One seed layer is covered on through-hole 2b and the interconnection surface line trenches 2a, second of sublayer are covered on the first sub-layer surface；Alternatively, the
Two seed layers are covered on through-hole 2b and the interconnection surface line trenches 2a, the first seed layer are covered on second seed layer surface.Wherein,
The material of one seed layer is copper, and the material of second of sublayer is zinc.
In the present embodiment, seed layer 4 is made by brass alloys, and brass alloys are the alloy including at least metallic copper and zinc
Material.Alloy material is uniform solid solution, is existed as an individual phase.
It is shown in Figure 4, by chemical plating method, metallic copper, and benefit are deposited in through-hole 2b and interconnection line trenches 2a
It is ground with chemical-mechanical planarization technology, until exposing the top surface of dielectric layer 2, forms metal interconnecting layer 5.
During electroless plating, electroplate liquid is acid copper sulfate baths.Electric current flows to yin from the copper electrode of anode
The substrate 1 of pole, sulfuric acid copper ionization are Cu2+And SO4 2-, Cu2+It is flow to substrate 1 with electric current, and in through-hole 2b and interconnection line trenches 2a
Reduction reaction and nucleating growth occur for interior 4 surrounding of seed layer, ultimately form metal interconnecting layer 5.
In the present embodiment, using brass alloys as seed layer 4, since brass alloys are homogeneous phase, the copper on surface can
To help seed layer that it is kept to cause the effect of copper conductor deposition growing, meanwhile, the zinc on surface can be because of activity compared with Gao You
It is first passivated with sulfuric acid reaction, generates fine and close oxide passivation layer, be coated on brass alloys surface, prevent seed layer 4 by acid
The corrosion of property solution.
The present embodiment further provides a kind of interconnection structure of semiconductor devices, shown in Figure 4, comprising: dielectric layer
2；Metal interconnecting layer 5 is set in dielectric layer 2, and metal interconnecting layer 5 is made by the first metal material；Seed layer 4 is set to Jie
Between matter layer 2 and metal interconnecting layer 5, seed layer 4 has the first seed layer and second of sublayer, and the first seed layer is by the first metal
Material is made, and second of sublayer is made by the second metal material that metal active is better than the first metal material.
The first metal material is copper in the present embodiment.Specifically, compared with other metal materials, the resistivity of copper compared with
Ability that is low, resisting electromigration is stronger, and is easy to obtain, and is common metal material in semiconductor devices.
Based on the selection of the first metal material, the second metal material is zinc.It can be led to using zinc as the second metal material
It crosses the preferential mode for participating in electrochemical corrosion and protects the first metal material (copper).Wherein, the chemical property of zinc is more active, favorably
In the generation of electrochemical corrosion, there is preferable protecting effect, and zinc acquisition is easier.In addition, zinc reacts energy in electroplate liquid
Enough oxidation films in the densification of its Surface Creation, to prevent the corrosion of electroplate liquid.
Certainly, in the other embodiments of the utility model, the second metal material can also for hafnium, aluminium, titanium, zirconium, vanadium,
The combination of one or more of manganese, niobium, zinc, chromium, gallium, iron, cadmium, indium, thallium, cobalt, nickel, molybdenum, tin, lead, as long as the second metal material
The metal active of material is better than the first metal material, and can form primary battery with the first metal material in electroplate liquid to subtract
Few corrosion of the electroplate liquid to the first metal material.
Specifically, during electroless plating, electroplate liquid is changed into electrochemistry corruption to the chemical attack of the first metal material
Erosion can reduce corrosion of the electroplate liquid to the first metal material by sacrificing the second metal material, to be conducive to subsequent metal
The growth of interconnection layer 5.Wherein, the first metal material is protected as the anode of electrochemical corrosion, and the second metal material is as negative
Pole is corroded.
It is further preferred that in the present embodiment, in order to further strengthen the protecting effect of second of sublayer, seed layer 4
Surface is also formed with passivation layer (not shown).Passivation layer due to being formed in 4 surface of seed layer will not be plated corrosion,
And passivation layer covers the surface of seed layer 4, therefore can deaden electroplate liquid and contact with seed layer 4, plays protection seed
The effect of layer 4.By reducing the contact of electroplate liquid and seed layer 4, corrosion of the electroplate liquid to the first metal material can be weakened, had
Effect ground reduces cavity blemish, so that the step of subsequent formation metal interconnecting layer 5 can be gone on smoothly, improves and partly leads
The quality of body device.
Also, in the present embodiment, in order to reduce to form passivation layer needed for processing step, control production cost, passivation
Layer is made by the oxide of the second metal material.Wherein, passivation layer made from the oxide of the second metal material can be by second
Seed layer directly reacts to obtain with acidic Bath, easily facilitates preparation.
In the present embodiment, seed layer 4 is made using the alloy material for including the first metal material and the second metal material, the
One seed layer and second of sublayer are configured to same phase.
Wherein, since the material of metal interconnecting layer 5 is the first metal material, be conducive to forming metal interconnecting layer 5
When need the first metal material seed crystal boundary carry out crystal growth.Also, due to formed seed layer 4 in the first seed layer and
Second of sublayer is configured to same phase, therefore the first seed layer and second of sublayer interface having the same, when second of sublayer
The second metal material when aoxidizing to form passivation layer, which will cover the surface of the first seed layer simultaneously, can more added with
First seed layer and electroplate liquid barrier are come on effect ground.
In the embodiment that the first metal material is copper, the second metal material is zinc, alloy material is brass.Wherein, yellow
Copper is standby simply, it is low to obtain difficulty, and can satisfy the demand of above-mentioned metal active, it is ensured that the metal interconnecting layer 5 of formation
Quality.
In addition, in the present embodiment, interconnection structure further includes the through-hole connection interconnection line that 5 side of metal interconnecting layer is arranged in
5a.Wherein, seed layer 4 is additionally arranged between through-hole connection interconnection line 5a and dielectric layer 2.By being connect in dielectric layer 2 with through-hole
Seed layer 4 is formed between interconnection line 5a, can be reduced cavity blemish in the processing step for forming through-hole connection interconnection line 5a, be mentioned
The reliability of high through-hole connection interconnection line 5a, to improve the quality of semiconductor devices.
It will be understood by those skilled in the art that in above-mentioned each embodiment, in order to keep reader more preferably geographical
It solves the application and proposes many technical details.But even if without these technical details and based on the respective embodiments described above
Various changes and modifications can also realize each claim of the application technical solution claimed substantially.Therefore, in reality
In, can to above embodiment, various changes can be made in the form and details, without departing from the spirit of the utility model
And range.
Claims (10)
1. a kind of interconnection structure of semiconductor devices characterized by comprising
Dielectric layer；
Metal interconnecting layer is set in the dielectric layer, and the metal interconnecting layer is made by the first metal material；
Seed layer is set between the dielectric layer and the metal interconnecting layer, and the seed layer has the first seed layer and the
Two seed layers, first seed layer are made by first metal material, and second of sublayer is better than institute by metal active
The second metal material for stating the first metal material is made.
2. interconnection structure according to claim 1, which is characterized in that the surface of the seed layer is also formed with passivation layer.
3. interconnection structure according to claim 2, which is characterized in that the passivation layer by second metal material oxygen
Compound is made.
4. interconnection structure described in any one of -3 according to claim 1, which is characterized in that first metal material is
Copper.
5. interconnection structure according to claim 4, which is characterized in that second metal material be hafnium, aluminium, titanium, zirconium,
One of vanadium, manganese, niobium, zinc, chromium, gallium, iron, cadmium, indium, thallium, cobalt, nickel, molybdenum, tin, lead.
6. interconnection structure according to claim 5, which is characterized in that second metal material is zinc.
7. interconnection structure according to claim 1, which is characterized in that the interconnection structure further includes being arranged in the metal
The through-hole of interconnection layer side connects interconnection line.
8. interconnection structure according to claim 7, which is characterized in that it is mutual that the seed layer is additionally arranged at the through-hole connection
Between line and the dielectric layer.
9. interconnection structure according to claim 1, which is characterized in that it includes first metal material that the seed layer, which uses,
The alloy material of material and second metal material is made, and first seed layer and second of sublayer are configured to same
Phase.
10. interconnection structure according to claim 9, which is characterized in that the alloy material is brass.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920511807.XU CN209571414U (en) | 2019-04-15 | 2019-04-15 | Interconnection structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920511807.XU CN209571414U (en) | 2019-04-15 | 2019-04-15 | Interconnection structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN209571414U true CN209571414U (en) | 2019-11-01 |
Family
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