CN209537616U - A kind of TCO conductive film coating apparatus of SHJ solar cell - Google Patents
A kind of TCO conductive film coating apparatus of SHJ solar cell Download PDFInfo
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- CN209537616U CN209537616U CN201921083075.5U CN201921083075U CN209537616U CN 209537616 U CN209537616 U CN 209537616U CN 201921083075 U CN201921083075 U CN 201921083075U CN 209537616 U CN209537616 U CN 209537616U
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- 239000007888 film coating Substances 0.000 title claims abstract description 14
- 238000009501 film coating Methods 0.000 title claims abstract description 14
- 238000000034 method Methods 0.000 claims abstract description 40
- 230000008569 process Effects 0.000 claims abstract description 30
- 230000009347 mechanical transmission Effects 0.000 claims abstract description 19
- 238000010276 construction Methods 0.000 claims abstract description 11
- 239000007789 gas Substances 0.000 claims description 64
- 239000001301 oxygen Substances 0.000 claims description 32
- 229910052760 oxygen Inorganic materials 0.000 claims description 32
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 29
- 238000012545 processing Methods 0.000 claims description 8
- 238000000576 coating method Methods 0.000 abstract description 19
- 239000011248 coating agent Substances 0.000 abstract description 13
- 230000005540 biological transmission Effects 0.000 abstract description 7
- 230000004069 differentiation Effects 0.000 abstract description 7
- 238000013461 design Methods 0.000 abstract description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 238000006243 chemical reaction Methods 0.000 abstract description 4
- 239000010408 film Substances 0.000 description 65
- 229910021417 amorphous silicon Inorganic materials 0.000 description 12
- 239000012528 membrane Substances 0.000 description 12
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 238000003475 lamination Methods 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 7
- 238000002360 preparation method Methods 0.000 description 6
- 230000001276 controlling effect Effects 0.000 description 5
- -1 oxonium ion Chemical class 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 230000005611 electricity Effects 0.000 description 4
- 229910003437 indium oxide Inorganic materials 0.000 description 4
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 206010021143 Hypoxia Diseases 0.000 description 1
- 206010037660 Pyrexia Diseases 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- KWXIRYKCFANFRC-UHFFFAOYSA-N [O--].[O--].[O--].[Al+3].[In+3] Chemical compound [O--].[O--].[O--].[Al+3].[In+3] KWXIRYKCFANFRC-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- JYMITAMFTJDTAE-UHFFFAOYSA-N aluminum zinc oxygen(2-) Chemical compound [O-2].[Al+3].[Zn+2] JYMITAMFTJDTAE-UHFFFAOYSA-N 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- CXKCTMHTOKXKQT-UHFFFAOYSA-N cadmium oxide Inorganic materials [Cd]=O CXKCTMHTOKXKQT-UHFFFAOYSA-N 0.000 description 1
- CFEAAQFZALKQPA-UHFFFAOYSA-N cadmium(2+);oxygen(2-) Chemical compound [O-2].[Cd+2] CFEAAQFZALKQPA-UHFFFAOYSA-N 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 238000004050 hot filament vapor deposition Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 208000018875 hypoxemia Diseases 0.000 description 1
- BDVZHDCXCXJPSO-UHFFFAOYSA-N indium(3+) oxygen(2-) titanium(4+) Chemical compound [O-2].[Ti+4].[In+3] BDVZHDCXCXJPSO-UHFFFAOYSA-N 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 1
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The utility model discloses a kind of TCO conductive film coating apparatus of SHJ solar cell, it is related to technical field of solar cell manufacturing, including vacuum chamber, mechanical transmission device is provided in the vacuum chamber, cathode construction is provided with above the mechanical transmission device, the cathode construction includes cathode assembly, and the cathode assembly is arranged perpendicular to the transmission direction of the mechanical transmission device, and the two sides of the cathode assembly are respectively arranged with the process gas control system of two sets of independent controls.The coating apparatus changes traditional coating process, it can be achieved with target with differentiation coating designs under appointed condition, improve the incident photon-to-electron conversion efficiency of SHJ solar cell, it is at low cost, stability is high, it is compatible with existing coating technique, it is with a wide range of applications and economic value.
Description
Technical field
The utility model relates to solar cell preparation technical field, the TCO conductive film of specially a kind of SHJ solar cell is plated
Film device.
Background technique
Solar cell generates electricity (photovoltaic power generation) with areal variation is small, reserves are huge, safe and pollution-free, resource is never withered
The features such as exhausting, it has also become the main force of 21 century new and renewable energy technology.By the end of the year 2018, whole world accumulation installation
Amount becomes the main force of new energy more than 400GW.
SHJ solar cell (silicon heterojunction solar cell) is a kind of efficient solar battery technology,
Also referred to as HITR battery.The battery sets gradually intrinsic silica-base film, N-shaped using N-shaped monocrystalline silicon piece as substrate, in the front surface of substrate
Silicon-based thin-film lamination and oxidic transparent conductive film (TCO) are adulterated, sets gradually intrinsic silica-base film, p at the back side of substrate
Type adulterates silicon-based thin-film lamination and oxidic transparent conductive film (TCO), to form the double-side photic with symmetrical structure too
Positive electricity pond.In SHJ solar cell, the excellent passivation quality of amorphous silicon membrane makes battery have very high open-circuit voltage.However,
Since amorphous silicon membrane electric conductivity is very poor, therefore one layer of TCO conductive film must be covered on amorphous silicon membrane surface for sufficiently receiving
Collection is transmitted to the photo-generated carrier of amorphous silicon membrane, while TCO conductive film also has the function of surface antireflective, can lower surface
Reflection loss.Therefore, TCO conductive film to the transfer efficiency for improving battery and is stablized extremely important.
Currently, generalling use the TCO conductive film that magnetron sputtering technology prepares SHJ solar cell.And too from above-mentioned SHJ
As can be seen that its front surface and rear surface are covered with the antipodal two kinds of amorphous silicons of conduction type in the basic structure in positive electricity pond
Film, this makes the physical contact property difference of its front surface and rear surface very big, using unified coating process, two kinds of differences
The amorphous silicon membrane of type and the work function mismatch of TCO conductive film are widely different, are difficult to realize good Ohmic contact, serious shadow
Ring the delivery efficiency of SHJ solar cell.In the prior art, traditional coating apparatus is unified gas in vacuum tank in plated film
Atmosphere has a single function, and cannot achieve otherness plated film.And in order to solve above-mentioned problem, it usually needs design in a device more
More target position cathode constructions of chamber, the TCO target or different technology conditions that different levels of doping is installed on different target position come
It is folded to prepare TCO conductive film, thus initial layers optimize interfacial contact characteristic, stop layer optimizes conductive characteristic.This method is certain
Good interface transmission may be implemented in degree, but its device structure and technical process are relative complex, constrain solar cell system
The lectotype selection and cost control for making enterprise, the commercialization for seriously hindering efficient SHJ solar cell is promoted and application.
Utility model content
The purpose of the utility model is to overcome the deficiencies in the prior art, provide a kind of TCO conductive film of SHJ solar cell
Traditional coating process can be changed in coating apparatus, realizes with target with differentiation coating designs under appointed condition, improves SHJ too
The incident photon-to-electron conversion efficiency in positive electricity pond, it is at low cost, stability is high, it is compatible with existing coating technique, it is with a wide range of applications
And economic value.
The purpose of this utility model is achieved through the following technical solutions:
A kind of TCO conductive film coating apparatus of SHJ solar cell, including vacuum chamber are provided with machinery in the vacuum chamber
Conveying device is provided with cathode construction above the mechanical transmission device, and the cathode construction includes cathode assembly, the yin
Pole device perpendicular to the mechanical transmission device transmission direction be arranged, the two sides of the cathode assembly be respectively arranged with two sets it is only
The process gas control system of vertical control.
Further, the cathode assembly includes at least one cathode or at least one cathode sets, and the cathode sets are
Two or more cathodes are arranged in the way of twin arrangement.
Further, the process gas control system includes gas supply plate, uniform crossover arrangement setting on the gas supply plate
There are an even device of air of process gas and the even device of air of oxygen, the even device of air of the process gas and the even device of air of oxygen include several processing
Air supply channel and several processing in the gas supply plate is in the venthole of gas supply plate side, and the venthole is for making the confession
Gas channel is connected to the external world of the gas supply plate.
Further, one end of the even device of air of the process gas is provided with for controlling its air supply channel on-off and for air-flow
The control valve a of amount, one end of the even device of air of oxygen are provided with for controlling its air supply channel on-off and gas supply flow
Control valve b.
Further, the venthole is uniformly distributed along the cathode assembly length direction, the size of the venthole
Length direction from close to one end of the control valve a or control valve b along the cathode assembly is sequentially increased.
It further, further include TCO target, the TCO target is set to the cathode assembly and the mechanical conveying dress
Between setting.
The beneficial effects of the utility model are:
Process gas control is arranged in the cathode assembly two sides of vacuum chamber in the TCO conductive film coating apparatus of the SHJ solar cell
System processed, the process gas control system include the even device of air of oxygen and the even device of air of process gas of independent control, so that its
Coating process changes traditional cathode gas supply form, in conjunction with the regional differentiation feature of cathodic region oxygen plasma, for SHJ
P-type and N-type amorphous silicon membrane are to the particular/special requirement of TCO conductive film, it can be achieved that with target with poor under appointed condition in solar cell
Alienation coating designs, under the premise of keeping volume production efficiency and yield rate, continuous preparation has the TCO conductive film of different function layer
Heap regulates and controls film stack interface effective work function using oxygen plasma, optimizes amorphous silicon membrane/TCO interfacial contact characteristic, make
The incident photon-to-electron conversion efficiency of SHJ solar cell maximizes.
Above-mentioned process gas control system is mainly by gas supply board group at uniform crossover arrangement is provided with process gas on gas supply plate
Even device of air and the even device of air of oxygen.If above-mentioned even device of air include it is several processing it is described gas supply plate in air supply channels and
Venthole of the dry processing in gas supply plate side.Its structure is simple, low manufacture cost.The end of even device of air is provided with control valve
Door, the flow control of the process gas and oxygen in it is realized by control valve, thus realize the gas supply form of above-mentioned differentiation,
It is easy to operate.Above-mentioned venthole is uniformly distributed along the cathode assembly length direction, and from close to one end of control valve
Aperture is sequentially increased, and each venthole discharge gas in same even device of air can be made relatively uniform, it is ensured that product uniform coated.
The utility model has low cost, the advantage of high stability, the TCO conductive film plated film with existing SHJ solar cell
The completely compatible feature of method, is applicable not only to SHJ solar battery, while being also applied for having spy to TCO conductive film film
Other optoelectronic semiconductor component plated films very required are with a wide range of applications and economic valence in solar cell preparation field
Value.
Detailed description of the invention
Fig. 1 is the basic structure schematic diagram of SHJ solar battery in the prior art；
Fig. 2 is the structural schematic diagram and work original of a kind of TCO conductive film coating apparatus of SHJ solar cell of the utility model
Reason figure；
Fig. 3 is the structural schematic diagram of cathode construction.
Specific embodiment
The technical solution of the utility model, but the protection scope of the utility model are described in further detail with reference to the accompanying drawing
It is not limited to as described below.
As shown in Figure 1, being SHJ solar battery in the prior art.In production, which is with N-shaped list
Crystal silicon chip 101 is substrate, carries out surface wool manufacturing and chemical cleaning to it first, forms clean pyramid limit photo structure；Then
Utilize plasma activated chemical vapour deposition (PECVD), metal fever catalytic chemical gaseous phase deposition (Cat-CVD), Hot Filament Chemical Vapor
The methods of (Hot-wire CVD) is deposited in 101 front surface deposition intrinsic silica-base film 102 of silicon wafer and n-type doping silica-base film
103 laminations, in the intrinsic silica-base film 102 of its backside deposition and 104 lamination of p-type doping silica-base film；Then in n-type doping silicon substrate
Deposition oxide transparent conductive film (TCO) 105 on 104 lamination of 103 lamination of film and p-type doping silica-base film；Pass through silk again
The metallization technologies such as wire mark brush or plating make metal electrode 106, form the double-side photic solar cell with symmetrical structure.
In the SHJ solar cell, the object of 104 lamination of 103 lamination of n-type doping silica-base film and p-type doping silica-base film
Reason contact performance is widely different, both after plated film very with the work function mismatch difference of oxidic transparent conductive film (TCO) 105
Greatly, it is difficult to realize good Ohmic contact, seriously affects the delivery efficiency of SHJ solar cell.
In the prior art, the coating process of TCO conductive film is usually completed by vacuum coating equipment, mainly include vacuum chamber and
Extract system is assisted, when carrying out the plated film of TCO conductive film, elder generation is in vacuum indoor location cathode targets and places work to be coated
Part builds vacuum environment using auxiliary extract system；It is filled with argon gas in its backward vacuum chamber, is powered produces between bombarding electrode later
Blaze light discharge effect, to ionize argon ion bombardment target material surface, target atom is pounded complete to be deposited to workpiece surface
At plated film.Existing vacuum coating equipment is the otherness plated film for realizing TCO conductive film, it usually needs designs more target position in a device
Cathode construction, it is folded to prepare TCO conductive film that the TCO target of different levels of doping is installed on different target position, thus in initial layers
Optimize interfacial contact characteristic, stop layer optimizes conductive characteristic.This leads to device structure and complex technical process, and coating cost is high,
The commercialization for seriously hindering efficient SHJ solar cell is promoted and application.
To solve the above problems, the utility model provides the TCO conductive film coating apparatus and plated film of a kind of SHJ solar cell
Technique, the main structure of the device is similar with vacuum coating equipment structure in the prior art, and specific structure is as shown in Fig. 2, packet
Vacuum chamber 301 is included, mechanical transmission device 306 is provided in vacuum chamber 301, the top of mechanical transmission device 306 is provided with cathode
Structure.The mechanical transmission device 306 selects the conveying equipments such as traditional conveyer belt, for driving product to move in plated film area.
The cathode construction includes cathode assembly 210, and cathode assembly 210 is arranged perpendicular to the transmission direction of mechanical transmission device 306, cathode
TCO target 302 is provided between device 201 and mechanical transmission device 306.The two sides of cathode assembly 210 are respectively arranged with two sets
The process gas control system of independent control.
The coating process for implementing TCO conductive film using the device is improved to traditional sputter coating process, is being plated
When film, adjusting above-mentioned two sets of process gas control systems respectively can provide the oxygen flow of differentiation, in 210 two sides of cathode assembly
The different plasma slab of oxygen content is formed, product is successively different in two oxygen contents when mobile with mechanical transmission device 306
Sputter coating in plasma slab.When implementing, solar cell piece product 304 is by load plate 305 in mechanical transmission device 306
Drive lower move forward.The oxonium ion in heating region that product 304 is introduced into carries out surface to silicon wafer amorphous silicon surfaces
Moditied processing, while forming oxygen-enriched or oxygen deprivation TCO thin film seed layer in film early growth period, thus regulate and control TCO thin film with
The interfacial contact characteristic of amorphous silicon membrane；The table of oxonium ion regulation TCO thin film in the heating region entered after product 304
Face characteristic makes TCO and metal electrode form good Ohmic contact.In above-mentioned TCO conductive film coating process, one can be formed
The TCO laminated construction 303 of the natural seed layer of kind, transition zone and leading layer, physical property and electric conductivity are more preferable.
When it is implemented, process gas control system includes gas supply plate, supplies uniform crossover arrangement on plate and be provided with technique
The even device of air of gas and the even device of air of oxygen, the even device of air of process gas and the even device of air of oxygen include several processing in gas supply plate
Air supply channel and several processing gas supply plate side venthole, venthole be used to making air supply channel and supply plate it is extraneous even
It is logical.Specifically, first contacting the even device of air 232 of ion plasma side setting process gas and the even device of air 222 of oxygen of product, it is followed by
Touching product ion plasma side be provided with the even device of air 231 of process gas and the even device of air 221 of oxygen, structure as shown in figure 3,
It is also the elevational schematic view of cathode assembly 210 in Fig. 2 shown in Fig. 3.When implementing, argon is passed through in the above-mentioned even device of air of process gas
The mixed gas of gas and water vapour or the mixed gas for being passed through argon gas, hydrogen are passed through oxygen in the even device of air of oxygen, these gases point
It is discharged after not flowing through corresponding air supply channel by venthole.It is provided in one end of the even device of air of process gas for controlling its gas supply
One end of the control valve a233 of channel on-off and gas supply flow, the even device of air 221,222 of oxygen are provided with for controlling its confession
The control valve b223 of gas channel on-off and gas supply flow, by controlling each valve a233 and valve b223, Ke Yifen
The amount of process gas or oxygen in each even device of air is not controlled, to obtain the oxygen flow of differentiation, realizes above-mentioned technique mistake
Journey.
In the specific implementation, the preparation work air pressure range of TCO conductive film is between 0.1 ~ 2Pa, power density 1-20KW/
m.When film surface to be plated on product is P-type non-crystalline silicon film, first touch in the transmission direction of mechanical transmission device 306 it is equal from
Daughter region is set as high oxygen ion concentration area, and oxygen supply > 3% improves P so as to increase the work function of TCO conductive film
Type amorphous silicon membrane/the interface TCO work function be excuse me, but I must be leaving now phenomenon, and good Ohmic contact is obtained.When film surface to be plated on product is that N-type is non-
When polycrystal silicon film, the heating region that the transmission direction of mechanical transmission device 306 first touches is set as hypoxemia ion concentration
Area, oxygen supply < 3% improve the N-type amorphous silicon membrane/interface TCO work function so as to reduce the work function of TCO conductive film
It excuse me, but I must be leaving now phenomenon, obtain good Ohmic contact.By the plenum system of differentiation, it can be achieved that with target with difference under appointed condition
Change coating designs, under the premise of keeping volume production efficiency and yield rate, continuous preparation has the TCO conductive film of different function layer
Heap is optimized amorphous silicon membrane/TCO interfacial contact characteristic, is made using the effective work function at oxygen plasma regulation film stack interface
The incident photon-to-electron conversion efficiency of SHJ solar cell maximizes.
Further, venthole is uniformly distributed along 210 length direction of cathode assembly, and the size of venthole is from close to control
One end of valve a233 or control valve b223 is sequentially increased along the length direction of cathode assembly 210, by big to venthole
It is small specifically to be designed, it can make in same even device of air that each venthole discharge gas is relatively uniform, it is ensured that product uniformly plates
Film.
Further, above-mentioned cathode assembly 210 includes at least one cathode or at least one cathode sets, cathode sets two
A or more than two cathodes are arranged in the way of twin arrangement.It, can needle when cathode assembly selects the cathode sets of twin arrangement
Suitable material is selected to each cathode, so that plasma slab material element can realize a variety of differences in 1-N kind consecutive variations
The overlay film of TCO material laminate.Each cathode two sides are respectively provided with above-mentioned process gas control system, pass through the technique gas control to each cathode
System processed is regulated and controled, can be in the continuous gradation of coating film area realization oxygen ion concentration, so that along mechanical transmission device 306
Transmission direction plasma slab oxygen ion concentration can be obtained in 0-50% consecutive variations in conjunction with the selection of above-mentioned plating membrane material
Obtain more preferably coating effects.
Further, above-mentioned cathode selects planar cathode or selection cathode, and above-mentioned cathode sets select planar cathode, rotation
It turns out cloudy the combination of pole or both, it can be complete with the TCO conductive film film plating process of SHJ solar battery in the prior art
It is compatible, meanwhile, which is applicable not only to SHJ solar battery, at the same be also applied for having TCO conductive film film it is special
It is required that other optoelectronic semiconductor component plated films, be suitable for include indium oxide, tin oxide, cadmium oxide, tungsten oxide, molybdenum oxide, oxygen
Change vanadium, titanium oxide, tin-doped indium oxide, mixes aluminium indium oxide, tungsten-doped indium oxide, mix titanium indium oxide, mix caesium indium oxide, mix alumina
Zinc, gallium-doped zinc oxide and one of mix gallium aluminium zinc oxide or multiple coating films.Have in solar cell preparation technology wide
General application prospect and economic value.
The above is only the preferred embodiment of the utility model, it should be understood that the utility model is not limited to herein
Disclosed form, should not be regarded as an exclusion of other examples, and can be used for other combinations, modifications, and environments, and
Can be in contemplated scope described herein, modifications can be made through the above teachings or related fields of technology or knowledge.And this field
The modifications and changes that personnel are carried out do not depart from the spirit and scope of the utility model, then all should be in right appended by the utility model
It is required that protection scope in.
Claims (6)
1. a kind of TCO conductive film coating apparatus of SHJ solar cell, which is characterized in that including vacuum chamber (301), the vacuum
It is provided with mechanical transmission device (306) in room (301), is provided with cathode construction above the mechanical transmission device (306), institute
Stating cathode construction includes cathode assembly (210), biography of the cathode assembly (210) perpendicular to the mechanical transmission device (306)
Defeated direction setting, the two sides of the cathode assembly (210) are respectively arranged with the process gas control system of two sets of independent controls.
2. a kind of TCO conductive film coating apparatus of SHJ solar cell according to claim 1, which is characterized in that the yin
Pole device (210) includes at least one cathode or at least one cathode sets, and the cathode sets are two or more yin
Pole is arranged in the way of twin arrangement.
3. a kind of TCO conductive film coating apparatus of SHJ solar cell according to claim 1, which is characterized in that the work
Skill gas control system includes gas supply plate, on the gas supply plate uniform crossover arrange be provided with the even device of air of process gas (231,
232) and the even device of air of oxygen (221,222), the even device of air of process gas (231,232) and the even device of air of oxygen (221,
222) air supply channel and several ventholes processed in gas supply plate side comprising several processing in the gas supply plate, it is described
Venthole is used to that the air supply channel and the external world of the gas supply plate to be made to be connected to.
4. a kind of TCO conductive film coating apparatus of SHJ solar cell according to claim 3, which is characterized in that the work
One end of the even device of air of skill gas (231,232) is provided with the control valve a for controlling its air supply channel on-off and gas supply flow
(233), one end of the even device of air of the oxygen (221,222) is provided with for controlling its air supply channel on-off and gas supply flow
Control valve b(223).
5. a kind of TCO conductive film coating apparatus of SHJ solar cell according to claim 4, which is characterized in that it is described go out
Stomata is uniformly distributed along the cathode assembly (210) length direction, and the size of the venthole is from close to the control valve a
(233) or control valve b(223) one end rise and be sequentially increased along the length direction of the cathode assembly (210).
6. a kind of TCO conductive film coating apparatus of SHJ solar cell according to claim 1, which is characterized in that further include
TCO target (302), the TCO target (302) be set to the cathode assembly (210) and the mechanical transmission device (306) it
Between.
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