CN209487532U - A kind of light emitting diode - Google Patents
A kind of light emitting diode Download PDFInfo
- Publication number
- CN209487532U CN209487532U CN201920460615.0U CN201920460615U CN209487532U CN 209487532 U CN209487532 U CN 209487532U CN 201920460615 U CN201920460615 U CN 201920460615U CN 209487532 U CN209487532 U CN 209487532U
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- type semiconductor
- semiconductor layer
- light emitting
- emitting diode
- pad
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- 239000004065 semiconductor Substances 0.000 claims abstract description 54
- 239000000758 substrate Substances 0.000 claims abstract description 4
- 230000004888 barrier function Effects 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 4
- 230000005611 electricity Effects 0.000 claims description 2
- 239000004744 fabric Substances 0.000 claims 1
- 239000007771 core particle Substances 0.000 abstract description 6
- 238000000034 method Methods 0.000 description 3
- -1 Cyclic n nitroso compound Chemical class 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
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Abstract
A kind of light emitting diode, including at least substrate, n type semiconductor layer, luminescent layer, the p type semiconductor layer stacked gradually from bottom to up, and the N electrode being electrically connected with n type semiconductor layer, the P electrode being electrically connected with p type semiconductor layer, the P electrode includes P pad and P the extension item positioned at P-type semiconductor layer surface, it is characterized by: the N electrode includes extending item positioned at the N pad of n type semiconductor layer side and positioned at N-type semiconductor layer surface and around the N of the luminescent layer and p type semiconductor layer, the extension end P is with N extension item apart from identical.Current expansion uniformity can be improved in the utility model, to improve brightness, enhances reliability；Core particles size can further reduce simultaneously.
Description
Technical field
The utility model belongs to semiconductor field more particularly to a kind of makes the light emitting diode of current expansion more evenly.
Background technique
The common process processing procedure of forward LED at present is to be exposed N-type layer to N-type layer by etching epitaxial layer, and revealing
N-type layer surface out makes N electrode, makes P electrode on the surface of P-type layer.When LED Injection Current, in P, N electrode line
Arc area current density is significantly higher than other regions, and with the increase of electric current, the increase of lighting time, high current density
Regional temperature can be significantly raised, and the semiconductor resistor of device can also significantly increase, to reduce internal quantum efficiency；Temperature simultaneously
Rise, the working characteristics and reliability of the LED of areas of high current density can be reduced.
Meanwhile in the LED of conventional structure, P, N electrode need to be made in epi-layer surface reserved area, when core particles size is into one
When step reduces, since P, N electrode are got too close to, to limit the diminution of core particles size.
Summary of the invention
In order to solve the above problem, the utility model provides a kind of light emitting diode, and current expansion uniformity can be improved,
Reduce core particles size.Specific technical solution is as follows:
A kind of light emitting diode, including at least the substrate, n type semiconductor layer, luminescent layer, p-type stacked gradually from bottom to up
Semiconductor layer, and the N electrode being electrically connected with n type semiconductor layer, the P electrode being electrically connected with p type semiconductor layer, the P
Electrode includes P pad and P the extension item positioned at P-type semiconductor layer surface, it is characterised in that: the N electrode includes being located at N-type half
The N pad of conductor layer side and positioned at N-type semiconductor layer surface and around the N of the luminescent layer and p type semiconductor layer extension
Item, the extension end P is with N extension item apart from identical.
Preferably, the P pad is located at the center of P-type semiconductor layer surface.
Preferably, the N pad is a plurality of equally distributed bulks.
Preferably, the quantity of the N pad is 2 or more.
Preferably, the N pad is the ring-type around n type semiconductor layer side.
Preferably, the P extension item is a plurality of equally distributed strips.
Preferably, the quantity of the P extension item is 2 or more.
Preferably, current barrier layer is arranged in the luminescent layer and p type semiconductor layer side.
Preferably, transparency conducting layer is additionally provided between the P electrode and P-type semiconductor.
The utility model is by the setting of P-type semiconductor layer surface there is P pad and P to extend the P electrode of item, in N-type half
The side of conductor layer is arranged N pad and the ring-type around luminescent layer and p type semiconductor layer is arranged on the surface of n type semiconductor layer
N extends item, and P extension end and N is made to extend item apart from identical, to promote current expansion, improves the uniform of current expansion
Property.In addition, core particles size can then further reduce since N pad is located at the side of n type semiconductor layer.
Detailed description of the invention
Fig. 1 is the light emitting diode top view of the utility model.
Fig. 2 is the sectional view along Fig. 1 line A-A.
Specific embodiment
The utility model LED chip is described in more detail below in conjunction with schematic diagram, which show this is practical
Novel preferred embodiment, it should be appreciated that those skilled in the art can modify the utility model described herein, and still real
The advantageous effects of existing the utility model.Therefore, following description should be understood as the widely known of those skilled in the art,
And it is not intended as limitations of the present invention.
Embodiment 1
Referring to attached Fig. 1 and 2, a kind of light emitting diode provided by the utility model, including at least stacking gradually from bottom to up
Substrate 10, n type semiconductor layer 20, luminescent layer 30, p type semiconductor layer 40, and with n type semiconductor layer be electrically connected N electricity
Current barrier layer is arranged in pole 70, the P electrode 60 being electrically connected with p type semiconductor layer, luminescent layer 30 and 40 side of p type semiconductor layer
80。
The present embodiment further includes the transparency conducting layer 50 being arranged between P electrode 60 and p type semiconductor layer 40, current blocking
Layer 80 then covers the side of luminescent layer 30, p type semiconductor layer 40 and current barrier layer 80.
As shown in Fig. 1, P electrode 60 includes P pad 61 and P the extension item 62 positioned at 40 surface of p type semiconductor layer, P weldering
Disk 61 is located at the center on 40 surface of p type semiconductor layer, and P extension item 62 is connect and along 40 table of p type semiconductor layer with P pad 61
Face extends from center to edge, and it is a plurality of equally distributed strips that P, which extends item 62, and quantity is 2 or more, sets in the present embodiment
Set symmetrical 8 P extension item 62.
As shown in Fig. 1, N electrode 70 includes being located at the N pad 71 of 20 side of n type semiconductor layer and partly leading positioned at N-type
20 surface of body layer simultaneously extends item 72 around the N of luminescent layer 30 and p type semiconductor layer 40.N pad 71 is a plurality of equally distributed
Bulk, quantity are 2 or more.
As shown in Fig. 1, P extends 62 end of item and N and extends item 72 apart from identical, such as L1=L2 shown in figure.It lights
It when LED, lights and LED is injected by P pad 61, electric current extends to its end along P extension item 62, while by transparency conducting layer 50, p-type
Semiconductor layer 40, luminescent layer 30, n type semiconductor layer 20 flow to the N extension item 62 and N pad 61 of annular, during this, due to P
62 end of item and N extension item 72 are extended apart from identical, to make promotion current expansion, improve the uniformity of current expansion.
The utility model is by the setting of P-type semiconductor layer surface there is P pad and P to extend the P electrode of item, in N-type half
The side of conductor layer is arranged N pad and the ring-type around luminescent layer and p type semiconductor layer is arranged on the surface of n type semiconductor layer
N extends item, and P extension end and N is made to extend item apart from identical, to promote current expansion, improves the uniform of current expansion
Property.In addition, core particles size can then further reduce since N pad is located at the side of n type semiconductor layer.
Embodiment 2
The light emitting diode of the present embodiment is that N pad is the ring around n type semiconductor layer side with the difference for implementing one
Shape.Cyclic n nitroso compound pad can reflect script from the light that side is projected, and increase positive amount of light, to promote brightness；Together
When biggish bonding pad area, bonding wire difficulty can be reduced.
It should be understood that above-mentioned specific embodiment is the preferred embodiment of the utility model, the model of the utility model
It encloses and is not limited to the embodiment, all any changes done according to the utility model, all within the category protection scope of the utility model.
Claims (9)
1. a kind of light emitting diode, including at least the substrate, n type semiconductor layer, luminescent layer, p-type half stacked gradually from bottom to up
Conductor layer, and the N electrode being electrically connected with n type semiconductor layer, the P electrode being electrically connected with p type semiconductor layer, the P electricity
Pole includes P pad and P the extension item positioned at P-type semiconductor layer surface, it is characterised in that: the N electrode includes being located at N-type partly to lead
The N pad of body layer side and item is extended positioned at N-type semiconductor layer surface and around the N of the luminescent layer and p type semiconductor layer,
The extension end P is with N extension item apart from identical.
2. a kind of light emitting diode according to claim 1, which is characterized in that the P pad is located at p type semiconductor layer table
The center in face.
3. a kind of light emitting diode according to claim 1, which is characterized in that the N pad is a plurality of is uniformly distributed
Bulk.
4. a kind of light emitting diode according to claim 3, which is characterized in that the quantity of the N pad is 2 or more.
5. a kind of light emitting diode according to claim 1, which is characterized in that the N pad is around n type semiconductor layer side
The ring-type in face.
6. a kind of light emitting diode according to claim 1, which is characterized in that the P extension item is a plurality of uniform points
The strip of cloth.
7. a kind of light emitting diode according to claim 1, which is characterized in that the quantity of P extension item be 2 with
On.
8. a kind of light emitting diode according to claim 1, which is characterized in that the luminescent layer and p type semiconductor layer side
Current barrier layer is arranged in face.
9. a kind of light emitting diode according to claim 1, which is characterized in that between the P electrode and P-type semiconductor also
It is provided with transparency conducting layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920460615.0U CN209487532U (en) | 2019-04-08 | 2019-04-08 | A kind of light emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920460615.0U CN209487532U (en) | 2019-04-08 | 2019-04-08 | A kind of light emitting diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN209487532U true CN209487532U (en) | 2019-10-11 |
Family
ID=68134998
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201920460615.0U Active CN209487532U (en) | 2019-04-08 | 2019-04-08 | A kind of light emitting diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN209487532U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112635632A (en) * | 2020-12-31 | 2021-04-09 | 深圳第三代半导体研究院 | Light emitting diode and method for manufacturing the same |
-
2019
- 2019-04-08 CN CN201920460615.0U patent/CN209487532U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112635632A (en) * | 2020-12-31 | 2021-04-09 | 深圳第三代半导体研究院 | Light emitting diode and method for manufacturing the same |
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