CN209487513U - A kind of epitaxial structure improving GaN power device breakdown voltage - Google Patents
A kind of epitaxial structure improving GaN power device breakdown voltage Download PDFInfo
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- CN209487513U CN209487513U CN201920241671.5U CN201920241671U CN209487513U CN 209487513 U CN209487513 U CN 209487513U CN 201920241671 U CN201920241671 U CN 201920241671U CN 209487513 U CN209487513 U CN 209487513U
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- substrate
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- power device
- bar
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Abstract
The utility model discloses a kind of epitaxial structures for improving GaN power device breakdown voltage, including substrate and epitaxial layer, the top of substrate is arranged in the epitaxial layer, the inside of the substrate is equipped with ceramic fibre, the top of the substrate is equipped with rectangular channel, heat-transfer device is equipped in the rectangular channel, the utility model by inside substrate doped with ceramic fibre, for increasing the breakdown characteristics of device, and utilize the heating conduction of ceramics, conducive to the heat dissipation of substrate, substrate temperature is avoided to increase, generate thermal breakdown, heat-transfer device in substrate is by copper sheet and heat conducting bar, it is located inside substrate by copper sheet, for collecting the heat in substrate, and pass through heat conducting bar for heat derives, increase the heat dissipation effect of substrate, it improves service life.
Description
Technical field
The utility model relates to GaN power device field, specially a kind of extension for improving GaN power device breakdown voltage
Structure.
Background technique
Gallium nitride power device is used in different electric elements assembly as common power device, is at present
The breakdown voltage for improving gallium nitride power device, needs the end of gallium nitride power device that extension block is arranged, and common at present is outer
Prolong auto-dope material inside fast substrate due to thermal evaporation or chemistry hair should can be to the corrosion of substrate, and heat dissipation effect is bad,
Lead to the breakdown characteristics for reducing device, for this purpose, it is proposed that a kind of epitaxial structure for improving GaN power device breakdown voltage.
Utility model content
The purpose of this utility model is to provide a kind of epitaxial structures for improving GaN power device breakdown voltage, to solve
The problems mentioned above in the background art.
To achieve the above object, the utility model provides the following technical solutions: a kind of raising GaN power device breakdown potential
The top of substrate is arranged in the epitaxial structure of pressure, including substrate and epitaxial layer, the epitaxial layer, and the inside of the substrate is equipped with pottery
Porcelain fiber, the top of the substrate are equipped with rectangular channel, are equipped with heat-transfer device in the rectangular channel；
The heat-transfer device includes copper sheet and heat conducting bar, and the left and right ends of the rectangular channel are equipped with mounting groove, the peace
Heat-conducting silicone grease block is fixedly installed in tankage, the left and right ends of the copper sheet are integrally formed with fixed block, the fixed block position
In in mounting groove, the outer wall of two mounting grooves is equipped with through-hole, and the heat conducting bar is fixedly mounted in through-hole.
Preferably, the left and right ends of the substrate are equipped with radiating block, and the outside of the radiating block is equipped with radiating groove.
Preferably, the connector includes the first upright bar, the second upright bar and nut, first upright bar and the second upright bar
Bottom end is respectively and fixedly installed to the top of radiating block and the top of substrate, first upright bar and the close side point of the second upright bar
Not She You the first plane and the second plane, the lateral wall of first upright bar and the second upright bar is equipped with screw thread, and the nut is spirally connected
On the lateral wall of the first upright bar and the second upright bar.
Preferably, the outer end of the fixed block is equipped with cambered surface.
Compared with prior art, the utility model has the beneficial effects that the utility model by inside substrate doped with
Ceramic fibre avoids base for increasing the breakdown characteristics of device, and using the heating conduction of ceramics conducive to the heat dissipation of substrate
Plate temperature increases, and generates thermal breakdown.
Heat-transfer device in substrate is located inside substrate, for collecting in substrate by copper sheet and heat conducting bar by copper sheet
Heat, and heat derives are increased the heat dissipation effect of substrate, improved service life by heat conducting bar.
Detailed description of the invention
Fig. 1 is the overall schematic of the utility model.
Fig. 2 is schematic diagram at a of the utility model.
Fig. 3 is the connector top view of the utility model.
In figure: 1, substrate, 2, epitaxial layer, 3, ceramic fibre, 4, heat-transfer device, 5, rectangular channel, 6, copper sheet, 7, fixed block,
8, heat-conducting silicone grease block, 9, through-hole, 10, heat conducting bar, 11, mounting groove, 12, radiating block, 13, radiating groove, 14, cambered surface, 15, connection
Part, the 16, first upright bar, the 17, first plane, the 18, second upright bar, the 19, second plane, 20, nut.
Specific embodiment
The following will be combined with the drawings in the embodiments of the present invention, carries out the technical scheme in the embodiment of the utility model
Clearly and completely describe, it is clear that the described embodiments are only a part of the embodiments of the utility model, rather than whole
Embodiment.Based on the embodiments of the present invention, those of ordinary skill in the art are without making creative work
Every other embodiment obtained, fall within the protection scope of the utility model.
Fig. 1, Fig. 2 and Fig. 3 are please referred to, the utility model provides a kind of technical solution: a kind of raising GaN power device breakdown
The top of substrate 1 is arranged in the epitaxial structure of voltage, including substrate 1 and epitaxial layer 2, epitaxial layer 2, and the inside of substrate 1 is equipped with pottery
Porcelain fiber 3, ceramic fibre 3 are silicon carbide fibre, are distributed in inside substrate 1, for increasing the disruptive field intensity of substrate 1, substrate 1
Top is equipped with rectangular channel 5, and heat-transfer device 4 is equipped in rectangular channel 5, and radiator 4 is used for the heat derives in substrate 1；
Heat-transfer device 4 includes copper sheet 6 and heat conducting bar 10, and the left and right ends of rectangular channel 5 are equipped with mounting groove 11, and copper sheet 6
In in rectangular channel 5, copper sheet 6 is fine copper, since fine copper has good thermal conductivity, is collected to the heat in substrate 1, then lead to
The export of heat conducting bar 10 is crossed, heat conducting bar 10 is also made of fine copper, and heat-conducting silicone grease block 8, a left side for copper sheet 6 are fixedly installed in mounting groove 11
Right both ends are integrally formed with fixed block 7, and fixed block 7 is for facilitating copper sheet 6 to be fixed in rectangular channel 5, when installation, by leading
The elasticity of hot silicone grease block 8, makes fixed block 7 slip over heat-conducting silicone grease block 8, and fixed block 7 is made to be located at the lower section of heat-conducting silicone grease block 8
(position as shown in Figure 2), fixed block 7 are located in mounting groove 11, and the outer wall of two mounting grooves 11 is equipped with through-hole 9, heat conducting bar
10 are fixedly mounted in through-hole 9.
Specifically, the left and right ends of substrate 1 are equipped with radiating block 12, the outside of radiating block 12 is equipped with radiating groove 13, dissipates
Heat block 12 be it is copper, for receiving the heat on heat conducting bar 10, heat is shed.
Specifically, connector 15 includes the first upright bar 16, the second upright bar 18 and nut 20, the first upright bar 16 and second is vertical
The bottom end of bar 18 is respectively and fixedly installed to the top of radiating block 12 and the top of substrate 1, and the first upright bar 16 and the second upright bar 18 are leaned on
Close side is respectively equipped with the first plane 17 and the second plane 19, and the lateral wall of the first upright bar 16 and the second upright bar 18 is equipped with spiral shell
Line, nut 20 are screwed on the lateral wall of the first upright bar 16 and the second upright bar 18, as shown in figure 3, the first upright bar 16 and second is vertical
After 19 pairing of the first plane 17 and the second plane on bar 18, the inside of radiating block 12 and the end of substrate 1 fit, then lead to
It crosses nut 20 to be locked, and then radiating block 12 and substrate 1 is linked together, fixed compared to by viscose, will not be stopped
The direct contact of radiating block 12 and heat conducting bar 10.
Specifically, the outer end of fixed block 7 is equipped with cambered surface 14, the setting of cambered surface 14 is convenient that copper sheet 6 is being mounted on rectangle
When in slot 5, increase the outer end of fixed block 7 and the sliding property of heat-conducting silicone grease block 8.
Working principle: good by ceramic fibre 3 due to the presence of ceramic fibre 3 in substrate 1 when GaN power device works
Good insulating properties, can increase the disruptive field intensity of substrate 1, the heat in substrate 1 is collected by copper sheet 6, passes through 8 He of heat-conducting silicone grease block
The conduction of heat conducting bar 10 leads radiating block 12, heat is shed.
While there has been shown and described that the embodiments of the present invention, for the ordinary skill in the art,
It is understood that these embodiments can be carried out with a variety of variations in the case where not departing from the principles of the present invention and spirit, repaired
Change, replacement and variant, the scope of the utility model is defined by the appended claims and the equivalents thereof.
Claims (4)
1. a kind of epitaxial structure for improving GaN power device breakdown voltage, including substrate (1) and epitaxial layer (2), the epitaxial layer
(2) it is arranged at the top of substrate (1), it is characterised in that: the inside of the substrate (1) is equipped with ceramic fibre (3), the substrate
(1) top is equipped with rectangular channel (5), is equipped with heat-transfer device (4) in the rectangular channel (5)；
The heat-transfer device (4) includes copper sheet (6) and heat conducting bar (10), and the left and right ends of the rectangular channel (5) are equipped with installation
Slot (11) is fixedly installed with heat-conducting silicone grease block (8) in the mounting groove (11), the left and right ends of the copper sheet (6) one at
Type has fixed block (7), and the fixed block (7) is located in mounting groove (11), and the outer wall of two mounting grooves (11) is equipped with logical
Hole (9), the heat conducting bar (10) are fixedly mounted in through-hole (9).
2. a kind of epitaxial structure for improving GaN power device breakdown voltage according to claim 1, it is characterised in that: institute
The left and right ends for stating substrate (1) are equipped with radiating block (12), are fixedly installed with connector (15) at the top of the radiating block (12),
The outside of the radiating block (12) is equipped with radiating groove (13).
3. a kind of epitaxial structure for improving GaN power device breakdown voltage according to claim 2, it is characterised in that: institute
Stating connector (15) includes the first upright bar (16), the second upright bar (18) and nut (20), and first upright bar (16) and second stand
The bottom end of bar (18) is respectively and fixedly installed to the top of radiating block (12) and the top of substrate (1), first upright bar (16) and
The close side of second upright bar (18) is respectively equipped with the first plane (17) and the second plane (19), first upright bar (16) and
The lateral wall of two upright bars (18) is equipped with screw thread, and the nut (20) is screwed onto the outside of the first upright bar (16) and the second upright bar (18)
On wall.
4. a kind of epitaxial structure for improving GaN power device breakdown voltage according to claim 1, it is characterised in that: institute
The outer end for stating fixed block (7) is equipped with cambered surface (14).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920241671.5U CN209487513U (en) | 2019-02-26 | 2019-02-26 | A kind of epitaxial structure improving GaN power device breakdown voltage |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920241671.5U CN209487513U (en) | 2019-02-26 | 2019-02-26 | A kind of epitaxial structure improving GaN power device breakdown voltage |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN209487513U true CN209487513U (en) | 2019-10-11 |
Family
ID=68133958
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201920241671.5U Expired - Fee Related CN209487513U (en) | 2019-02-26 | 2019-02-26 | A kind of epitaxial structure improving GaN power device breakdown voltage |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN209487513U (en) |
-
2019
- 2019-02-26 CN CN201920241671.5U patent/CN209487513U/en not_active Expired - Fee Related
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20191011 Termination date: 20210226 |