CN209487499U - LED flip chip integrated encapsulation structure - Google Patents
LED flip chip integrated encapsulation structure Download PDFInfo
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- CN209487499U CN209487499U CN201920303214.4U CN201920303214U CN209487499U CN 209487499 U CN209487499 U CN 209487499U CN 201920303214 U CN201920303214 U CN 201920303214U CN 209487499 U CN209487499 U CN 209487499U
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- Prior art keywords
- flip chip
- led flip
- led
- fluorescence coating
- rigid
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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Abstract
The utility model discloses a kind of LED flip chip integrated encapsulation structure, including rigid fluorescence coating, LED flip chip, circuit layer, the one side of the rigidity fluorescence coating is equipped with the hole for accommodating LED flip chip；The LED flip chip includes illuminator and electrode, and at the back side of illuminator, the illuminator is placed in the hole of the rigid fluorescence coating electrode；The circuit layer is set to the surface of the rigid fluorescence coating, and the circuit layer is connect with the electrode of the LED flip chip.The utility model proposes a kind of LED flip chip integrated encapsulation structures can not only solve the problems, such as that terminal LED product volume is larger, but also it can solve the difficult problem of existing packaged type heat dissipation and also can solve in existing packaged type using gold thread connection chip and substrate/bracket positive and negative anodes, because of gold thread easy fracture, the problem of causing LED wafer can not work normally.
Description
Technical field
The utility model relates to LED flip-chip packages fields, and in particular to a kind of LED flip chip integration packaging knot
Structure.
Background technique
The LED encapsulation prior art mostly uses the structure of Fig. 1 to be packaged at present, i.e., installs at least one on substrate/bracket a
A LED wafer b, LED wafer b are fixed on the settlement on substrate or bracket a by crystal-bonding adhesive, then brilliant with gold thread connection LED
Piece b and substrate/bracket a positive and negative anodes realize circuit connection, then use fluorescent glue c and silica gel d by LED wafer b and gold thread packet
It wraps up in, is finally toasted, remove the empty bubble in packaging plastic, realization and air insulated, prevent moisture.But use both
Packaged type has the disadvantage that
1. using gold thread connection LED wafer b and substrate/bracket a positive and negative anodes, gold thread is easily broken off by repeatedly pullling,
LED wafer b is caused to can not work normally；
The heat that 2.LED chip b is generated when working is difficult to distribute, because heat needs the lining by LED wafer b
Bottom, crystal-bonding adhesive, bracket/substrate a can just be passed, and the thermal resistance of packaging body is larger；
3. the packaged type of the prior art is difficult the integrated circuit on packaging body, external drive circuit, LED wafer b are needed
It could work, thus make terminal LED product volume larger；
4. the LED wafer b packaging technology process of the prior art is more, the material used is more, and packaging cost is more expensive.
Utility model content
It can not be integrated on LED wafer packaging body to solve LED drive circuit in the prior art, cause terminal LED product
The larger problem of volume proposes a kind of LED flip chip integrated encapsulation structure, and it is integrated that the utility model provides LED flip chip
Encapsulating structure is able to solve the larger problem of terminal LED product volume.
The technical solution of the utility model includes:
A kind of LED flip chip integrated encapsulation structure, comprising:
The one side of rigid fluorescence coating, the rigidity fluorescence coating is equipped with the hole for accommodating LED flip chip；
LED flip chip, the LED flip chip include illuminator and electrode, and the electrode is in the back side of illuminator, institute
Illuminator is stated to be placed in the hole of the rigid fluorescence coating；
Circuit layer, the circuit layer are set to the surface of the rigid fluorescence coating, and the circuit layer and the LED upside-down mounting are brilliant
The electrode of piece connects.
Further, the illuminator back side of the LED flip chip and the rigid fluorescence coating are equipped at the one side of hole
In same level.
Further, the LED flip chip integrated encapsulation structure further includes binder course, and the binder course is used for will be rigid
The illuminator of fluorescence coating and LED flip chip is combined, and four profile heights of the binder course are beyond the rigid fluorescence
Layer is equipped with the surface of hole one side.
Further, the combination layer material is organic gel or the organic gel for mixing organic and/or inorganic materials.
Further, be provided with insulating layer between the circuit layer and the rigid fluorescence coating, the circuit layer with it is described
Insulating layer is also equipped between LED flip chip, the electrode of the LED flip chip is connected by connection medium and the circuit layer
It connects, the connection medium runs through the insulating layer.
To solve the problems, such as that LED wafer encapsulating structure heat dissipation effect is poor in the prior art, and foregoing circuit layer is replaced with instead
Layer is penetrated, the reflecting layer is not connect with the electrode of LED flip chip, the driving electricity outside the electrode and the integrated encapsulation structure
Road connection, circuit layer, which is replaced with reflecting layer, can also improve the luminous efficiency of LED product.
Compared with prior art, the technical effect that the utility model has:
1. the utility model encapsulating material by using rigid fluorescence coating, is arranged hole on rigid fluorescence coating and places LED
Flip chip, while circuit layer is arranged on rigid fluorescence coating, circuit layer is electrically connected with the electrode of LED flip chip, is solved
The problem of being difficult integrated circuit layer on it using packaging plastics such as fluorescent glue, silica gel in the prior art reduces so as to reach
The effect of terminal LED product volume；
2. the utility model is directly connected to circuit layer by using the electrode of LED flip chip, it is no longer necessary to gold thread conduct
Intermediary solves the problems, such as that LED wafer can not work normally caused by being easy in the prior art because of gold thread fracture, to improve
The job stability of LED product；
3. the utility model is exposed outside encapsulating material by the illuminator back side of LED flip chip, solve existing
Because of completely packed material package, radiate LED wafer difficult problem when LED wafer being caused to work, and improves LED encapsulation in technology
The heat dissipation performance of structure；
4. the utility model is between rigid fluorescence coating and circuit layer by being arranged insulating layer, at the same LED flip chip with
Insulating layer is also provided between circuit layer, the electrode of LED flip chip is connect with electrode through insulating layer by connection medium, insulated
Layer can not only increase the luminous efficiency of LED light, and can prevent the positive and negative anodes short circuit of LED flip chip.
5. the utility model encapsulating structure is simpler compared with prior art construction, packaging technology process is reduced；
6. the utility model encapsulating material more saves, encapsulation Material Cost can be reduced.
Detailed description of the invention
Fig. 1 is prior art encapsulating structure；
Fig. 2 is the structure chart of the utility model embodiment LED flip chip integrated encapsulation structure；
Fig. 3 is the flow chart of the utility model embodiment LED flip chip integrated encapsulation method.
Specific embodiment
The following will be combined with the drawings in the embodiments of the present invention, carries out the technical scheme in the embodiment of the utility model
Clearly and completely describe, it is clear that the described embodiments are only a part of the embodiments of the utility model, rather than whole
Embodiment.Based on the embodiments of the present invention, those of ordinary skill in the art are without making creative work
Every other embodiment obtained, fall within the protection scope of the utility model.
Embodiment one:
The structure chart of the utility model embodiment LED flip chip integrated encapsulation structure as shown in Figure 2, LED upside-down mounting are brilliant
Piece integrated encapsulation structure includes rigid fluorescence coating 1, LED flip chip and circuit layer 5, wherein rigid fluorescence coating 1 is used as package material
Material, encapsulating material are the material with high refractive index and light transmittance, such as ceramic fluorescent piece, glass flourescent sheet, monocrystalline luminescence from silicon
Piece etc., wherein LED flip chip includes illuminator 3 and electrode 4, and the electrode 4 is at the back side of illuminator 3.
Specifically, the one side of rigid fluorescence coating 1 is equipped with the hole for accommodating LED flip chip, and illuminator 3 is placed in the rigidity
In the hole of fluorescence coating 1, circuit layer 5 is set to the surface of rigid fluorescence coating 1 and the electrode in coverage hole, circuit layer 5 and LED
The electrode 4 of flip chip connects, and can not only be integrated LED drive circuit on top of the encapsulation material using such encapsulating structure, nothing
External drive circuit again is needed, so as to reduce the size of terminal LED product, and circuit layer 5 can also play the work of light reflection
With to increase luminous efficiency.
Further, 3 back side of illuminator of LED flip chip is in same with the one side that rigid fluorescence coating 1 is equipped with hole
Horizontal plane, guarantees the surface of the fully wrapped around illuminator 3 of encapsulating material, to guarantee that luminous efficiency maximizes.
Further, LED flip chip integrated encapsulation structure further includes binder course 2,2 material of binder course be organic gel or
Person mixes the organic gel of organic and/or inorganic materials, and organic gel can be pure organic material, be also possible to be mixed with nothing in organic material
Machine material, binder course 2 fix LED flip chip for being combined the illuminator of rigid fluorescence coating and LED flip chip
On rigid fluorescence coating 1, the heat that binder course 2 generates when LED flip chip can also work passes through rigid fluorescence coating 1 and passes out
It goes.
Preferably, four profile heights of binder course slightly exceed the surface that rigid fluorescence coating is equipped with hole one side, facilitate personnel
Directly whether observation combines layer material enough, to guarantee that LED flip chip is sufficiently combined with rigid fluorescence coating.
Preferably, it is provided with insulating layer between circuit layer and rigid fluorescence coating, is also set between circuit layer and LED flip chip
It is equipped with insulating layer, the electrode of LED flip chip is connect by connecting medium with circuit layer, and connection medium runs through insulating layer, connection
Medium is that conductive materials, the insulating layers such as connector or connecting line can be fabricated to following several structures:
1. rigidity fluorescence coating and LED flip chip is completely covered in insulating layer, circuit layer is arranged on the insulating layer, and insulating layer exists
The electrode position of LED flip chip is provided with hole, is connect electrode with circuit layer using connection medium, and this structure not only can be with
Increase the luminous efficiency of LED light, and the positive and negative anodes short circuit of LED flip chip can also be prevented；
2. insulating layer covers rigid fluorescence coating, circuit layer is arranged on the insulating layer, and this structure can increase the hair of LED light
Light efficiency；
3. insulating layer is arranged between the positive and negative anodes of LED flip chip, when circuit sandwich circuit is more, can be fallen in LED
The insulating layer upward wiring between the positive and negative anodes of chip is filled, insulating layer can prevent the positive and negative anodes short circuit of LED flip chip.
Present aspect embodiment provides a kind of LED flip chip integrated encapsulation method, and this method is applicable in above-mentioned LED upside-down mounting
Chip integrated encapsulation structure can solve the problem that LED wafer packaging technology process is more in the prior art, can simplify encapsulation work
Skill process, but also encapsulating material can be reduced, to reduce cost of manufacture.Specifically, such as Fig. 3, this method includes following step
It is rapid:
S1: the hole of LED flip chip can be accommodated in the one side setting of rigid fluorescence coating 1；
Specifically, the size of the hole is arranged according to the size of LED flip chip, which can wrap completely
Wrap up in illuminator 3.
S2: LED flip chip is placed in hole, and the light-emitting surface of LED flip chip is towards hole；
S3: circuit layer is made on the surface of rigid fluorescence coating, the electrode in circuit layer coverage hole.
Preferably, in step S2, binder course is first filled by the way of dispensing or printing inside hole, then by LED
Flip chip is placed in hole, then will be carried out heating in vacuum equipped with the rigid fluorescence coating of binder course and LED flip chip, is passed through
Heating in vacuum solidifies binder course 2, combines LED flip chip and rigid fluorescence coating 1 preferably, and pass through heating in vacuum
Mode by binder course 2 cavity and bubble removal.
Preferably, in step S3, insulating layer, circuit layer and LED upside-down mounting first are set between circuit layer and rigid fluorescence coating
It is also provided with insulating layer between chip, then makes circuit layer in surface of insulating layer, insulating layer is provided with hole, LED flip chip
Electrode passes through hole by connection medium and connect with circuit layer.
Embodiment two:
The utility model embodiment additionally provides a kind of LED flip chip integrated encapsulation structure, principle and above-mentioned implementation
Example is identical, and difference is that circuit layer 5 is replaced with reflecting layer, and rigid fluorescence coating 1 is completely covered equipped with hole in reflecting layer
(electrode 4 does not cover) on one side, reflecting layer is not connect with the electrode of LED flip chip, the electrode and integration packaging of LED flip chip
The driving circuit of structural outer connects, and can preferably increase LED product luminous efficiency by reflecting layer.
While there has been shown and described that the embodiments of the present invention, for the ordinary skill in the art,
It is understood that these embodiments can be carried out with a variety of variations in the case where not departing from the principles of the present invention and spirit, repaired
Change, replacement and variant, the scope of the utility model is defined by the appended claims and the equivalents thereof.
Claims (6)
1. a kind of LED flip chip integrated encapsulation structure characterized by comprising
The one side of rigid fluorescence coating, the rigidity fluorescence coating is equipped with the hole for accommodating LED flip chip；
LED flip chip, the LED flip chip include illuminator and electrode, and the electrode is in the back side of illuminator, the hair
Body of light is placed in the hole of the rigid fluorescence coating；
Circuit layer, the circuit layer are set to the surface of the rigid fluorescence coating, the circuit layer and the LED flip chip
Electrode connection.
2. LED flip chip integrated encapsulation structure according to claim 1, which is characterized in that the LED flip chip
The one side that the illuminator back side and the rigid fluorescence coating are equipped with hole is in same level.
3. LED flip chip integrated encapsulation structure according to claim 1, which is characterized in that the LED flip chip collection
It further include binder course at encapsulating structure, the binder course is for tying the illuminator of rigid fluorescence coating and LED flip chip
It closes, four profile heights of the binder course are equipped with the surface of hole one side beyond the rigid fluorescence coating.
4. LED flip chip integrated encapsulation structure according to claim 3, which is characterized in that the combination layer material is
Organic gel or the organic gel for mixing organic and/or inorganic materials.
5. LED flip chip integrated encapsulation structure according to claim 1, which is characterized in that the circuit layer with it is described
It is provided with insulating layer between rigid fluorescence coating, is also equipped with insulating layer between the circuit layer and the LED flip chip, it is described
The electrode of LED flip chip is connect by connecting medium with the circuit layer, and the connection medium runs through the insulating layer.
6. LED flip chip integrated encapsulation structure according to claim 1, which is characterized in that the circuit layer replaces with
Reflecting layer, the electrode are connect with the driving circuit outside the LED flip chip integrated encapsulation structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920303214.4U CN209487499U (en) | 2019-03-11 | 2019-03-11 | LED flip chip integrated encapsulation structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920303214.4U CN209487499U (en) | 2019-03-11 | 2019-03-11 | LED flip chip integrated encapsulation structure |
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| Publication Number | Publication Date |
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| CN209487499U true CN209487499U (en) | 2019-10-11 |
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| CN201920303214.4U Active CN209487499U (en) | 2019-03-11 | 2019-03-11 | LED flip chip integrated encapsulation structure |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110010595A (en) * | 2019-03-11 | 2019-07-12 | 常州市武进区半导体照明应用技术研究院 | LED flip chip integrated encapsulation structure and its packaging method |
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2019
- 2019-03-11 CN CN201920303214.4U patent/CN209487499U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110010595A (en) * | 2019-03-11 | 2019-07-12 | 常州市武进区半导体照明应用技术研究院 | LED flip chip integrated encapsulation structure and its packaging method |
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