CN209460177U - The measuring device of thermal expansion coefficient - Google Patents
The measuring device of thermal expansion coefficient Download PDFInfo
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- CN209460177U CN209460177U CN201821715412.3U CN201821715412U CN209460177U CN 209460177 U CN209460177 U CN 209460177U CN 201821715412 U CN201821715412 U CN 201821715412U CN 209460177 U CN209460177 U CN 209460177U
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- laser
- microcosmic
- thermal expansion
- cantilever
- expansion coefficient
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Abstract
The utility model discloses a kind of measuring devices of thermal expansion coefficient, comprising: add in-place thermal station, for carrying and heating sample；Workbench is located at add in-place thermal station side；Microcosmic cantilever, one end are set to the top of the workbench, and the other end is contacted by nano-probe with the surface of sample, and the microcosmic cantilever surfaces are coated with reflecting layer；Laser source projects laser beam to the microcosmic cantilever；Laser reflection amplification mould group receives the laser beam reflected on the microcosmic cantilever, and amplification back reflection is gone out；And signal receives and processing system, the photodiode arrangement is for receiving amplified laser beam signal and passing to signal processing system, and the signal processing system handles laser beam signal, to obtain the thermal expansion coefficient of sample.The utility model utilizes laser reflection amplification principle, and nanoscale change in size caused by sample is thermally expanded effectively is amplified, to achieve the purpose that precise measurement thermal expansion coefficient.
Description
Technical field
The utility model relates to IC manufacturing field, in particular to a kind of measuring device of thermal expansion coefficient.
Background technique
For measuring the thermal expansion coefficient of material, two basic parameters need precise measurement, i.e., when temperature and material are heated
Change in size.Wherein, the precise measurement of the heated generated dimensional variation of material is most challenging.It is primarily due to
Flexible size caused by thermal expansion and its small, such as SiO2Material, the coefficient of expansion only have 1 × 10-6/K.Therefore for a thickness of
10 microns of SiO2Thin-film material is only 0.01 nanometer of change in size per change in size caused by temperature change once.
Traditional thermal expansion measurement method requires test sample size in grade or more, and is just difficult to realize heat for thin-film material
The analysis and measurement of the coefficient of expansion.
Utility model content
The utility model provides a kind of measuring device of thermal expansion coefficient, to solve to be difficult to analyze and survey in the prior art
The problem of measuring the thermal expansion coefficient of the following material of grade.
In order to solve the above technical problems, the utility model provides a kind of measuring device of thermal expansion coefficient, comprising: add in-place
Thermal station, for carrying and heating sample；Workbench is located at add in-place thermal station side；Microcosmic cantilever, one end are set to the work
The top of platform, the other end are contacted by nano-probe with the surface of sample, also, the microcosmic cantilever surfaces are coated with reflection
Layer；Laser source, for projecting laser beam to the microcosmic cantilever；Laser reflection amplifies mould group, for receiving the microcosmic cantilever
The laser beam of upper reflection, amplification back reflection are gone out；And signal receives and processing system, including photodiode arrangement and signal
Processing system, the photodiode arrangement is for receiving amplified laser beam signal and passing to signal processing system, institute
It states signal processing system to handle laser beam signal, to obtain the thermal expansion coefficient of sample.
Preferably, the laser reflection amplification mould group is at least provided with 2 groups.
Preferably, being provided with temperature control and record system in the add in-place thermal station, and temperature control and note
Recording system is connect with the signal processing system.
Preferably, the workbench is piezoelectricity sample stage.
Preferably, the laser reflection amplification mould group includes: diode laser and laser mirror.
The utility model also provides a kind of measurement method of thermal expansion coefficient, using the measuring device, comprising:
Sample is placed in add in-place thermal station, while one end of microcosmic cantilever being connect by nano-probe and sample surfaces
Touching；
Laser source issue laser beam, laser beam through microcosmic cantilever surfaces reflection and laser reflection mould group reflection amplification after by
Photodiode arrangement receives；
Add in-place thermal station heating sample records heating temperature simultaneously, and sample surfaces expansion makes nano-probe and microcosmic cantilever
One end height change；
Laser source issues laser beam, again by light after the reflection of microcosmic cantilever surfaces and the reflection of laser reflection mould group amplification
Quick diode array receives；
The signal of photodiode arrangement is received before and after signal processing system twice and combines heating temperature parameter, calculating obtains
Take the thermal expansion coefficient of sample.
Compared with prior art, the utility model amplifies mould group using laser reflection, will be small caused by sample thermal expansion
Nanoscale change in size effectively amplify, using signal receive and processing system effectively detect amplified change in size.From
And achieve the purpose that precise measurement material thermal expansion coefficient.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the measuring device of the thermal expansion coefficient of the utility model.
Fig. 2 is the measuring principle schematic diagram of the thermal expansion coefficient of the utility model.
It is as shown in the figure: 10- add in-place thermal station, 20- workbench, the microcosmic cantilever of 30-, 40- nano-probe, 50- laser source,
60- laser reflection amplifies mould group, 70- photodiode arrangement, 80- signal processing system.
Specific embodiment
To keep the above objects, features, and advantages of the utility model more obvious and easy to understand, with reference to the accompanying drawing to this
The specific embodiment of utility model is described in detail.It should be noted that the utility model attached drawing is all made of simplified form
And non-accurate ratio is used, only to convenient, lucidly aid illustration the utility model embodiment purpose.
As shown in Figure 1, the utility model provides a kind of measuring device of thermal expansion coefficient, comprising: add in-place thermal station 10, work
Make platform 20, the microcosmic cantilever 30 with nano-probe 40, laser source 50, laser reflection amplification mould group 60 and signal receives and place
Reason system.
The add in-place thermal station 10 is provided with temperature control and note in the add in-place thermal station 10 for carrying sample 100
Recording system for accurately being heated and being made sample 100 to keep constant temperature to the sample 100, while recording the temperature of sample 100
Degree, in order to subsequent calculating.In general, the temperature control and record system use the constant temperature with data acquisition and storage function
Control equipment.
The workbench 20 uses piezoelectricity sample stage, is located at 10 side of add in-place thermal station, for carrying the microcosmic cantilever
30, the size of the microcosmic cantilever 30 is made of to hundreds of microns silicon or silicon nitride tens of, and 30 table of microcosmic cantilever
Face is coated with reflecting layer, for receiving the laser beam of the sending of laser source 50, and it is reflected away.
The other end of the microcosmic cantilever 30 is contacted by nano-probe 40 with the surface of sample 100.When sample 100 is heated
When expansion, the height of nano-probe 40 changes, so that the reflection angle of laser beam changes on microcosmic cantilever 30.
The laser reflection amplification mould group 60 amplifies it for receiving the laser beam reflected on the microcosmic cantilever 30
Back reflection is gone out.Specifically, the laser reflection amplification mould group 60 includes: diode laser (Laser Diode) and laser
Reflecting mirror.When sample expanded by heating, volume expansion shows as the variation of height, and microcosmic cantilever 30 is caused to move up, from
And make the laser beam for being radiated at microcosmic 30 end of cantilever reflection optical position as the displacement of microcosmic cantilever 30 and change, this
Result in the generation of laser spot position offset.The offset of laser facula is remembered by subsequent photodiode arrangement 70
Record is lower and is converted into the signal of electricity, so that signal processing system 80 makees signal processing.
It should be noted that sample thermally expands the minor change of caused laser beam reflection angle on microcosmic cantilever 30,
Mould group 60 can be amplified by laser reflection effectively to be amplified, and the multiplying power amplified can amplify by adjusting laser reflection
The quantity of mould group 60 is adjusted.And the amplification of ten thousand times of ranks may be implemented in multiple laser reflection amplification mould group 60, that is, thermally expands
Caused 0.01 nanometer of change in size can be amplified to 100 nanometers, and this amplified change in size can be connect by signal
It receives and processing system effectively, accurately detects, to reach the precise measurement of thermal expansion coefficient.
For the present embodiment amplification mould group 60 of the laser reflection described in 2 groups, illustrate the amplification of laser reflection amplification mould group 60
Principle.As shown in Fig. 2, when sample expanded by heating, microcosmic cantilever 30 is moved up, to make to be radiated at microcosmic 30 end of cantilever
The reflection angle of laser beam change so that projecting the incident angle in first group of laser reflection amplification mould group 60
It moves with facula position, by measuring the position amount of movement D1 of available hot spot, is put by first group of laser reflection
Laser beam after big 60 reflection of mould group is transmitted in second group of laser reflection amplification mould group 60, and is incident upon second group of laser
The position offset D2 of hot spot in reflection amplification mould group 60 is further increased, and relative to the expansion of sample, may be implemented ten thousand times
The amplification of rank.Further, above-mentioned position offset D1 and D2, can by the front and back of laser beam twice incidence angle and
Positional relationship between two groups of laser reflection amplification mould groups 60 and microcosmic cantilever 30, calculates and obtains.
The signal receives and processing system includes photodiode arrangement 70 and connects with the photodiode arrangement 70
The signal processing system 80 connect.Specifically, the photodiode arrangement 70 is for receiving amplified laser beam, and this is swashed
Light beam is converted to electric signal, and electric signal is passed to signal processing system 80, the signal processing system 80 to electric signal into
Row is handled, and 100 temperature data of sample recorded in combination temperature control and record system calculates the thermal expansion for obtaining sample 100
Coefficient.
Please continue to refer to Fig. 1, the utility model also provides a kind of measurement method of thermal expansion coefficient, comprising:
Sample 100 to be measured is placed in add in-place thermal station 10, the thickness of usual sample 100 is in the micron-scale.
One end of microcosmic cantilever 30 is contacted by nano-probe 40 with 100 surface of sample；
Laser source 50 is opened, laser source 50 issues laser beam, and laser beam 50 is anti-through microcosmic 30 surface reflection of cantilever and laser
It is received after penetrating the reflection and amplification of mould group 60 by photodiode arrangement 70；
Add in-place thermal station 10 heats the heating temperature that sample 100 records sample 100 simultaneously, the heated rear surface of sample 100
Expansion makes the position of nano-probe 40 change, and the minor change of 40 position of nano-probe will lead to swashing on microcosmic cantilever 30
The reflection angle of light beam changes；
Laser source 50 issues laser beam, and (this time reflection angle and heating are preceding not for the surface reflection again through microcosmic cantilever 30
Together), the laser beam after reflection is received after the reflection of laser reflection mould group 60 amplification by photodiode arrangement 70 again；
80 front and back of signal processing system receives the signal of photodiode arrangement 70 twice and combines heating temperature parameter, meter
Calculate the thermal expansion coefficient for obtaining sample 100.
Obviously, it is practical new without departing from this can to carry out various modification and variations to utility model by those skilled in the art
The spirit and scope of type.If in this way, these modifications and variations of the present invention belong to the utility model claims and its
Within the scope of equivalent technologies, then the utility model is also intended to including these modification and variations.
Claims (5)
1. a kind of measuring device of thermal expansion coefficient characterized by comprising
Add in-place thermal station, for carrying and heating sample；
Workbench is located at add in-place thermal station side；
Microcosmic cantilever, one end are set to the top of the workbench, and the other end is contacted by nano-probe with the surface of sample, and
And the microcosmic cantilever surfaces are coated with reflecting layer；
Laser source, for projecting laser beam to the microcosmic cantilever；
Laser reflection amplifies mould group, and for receiving the laser beam reflected on the microcosmic cantilever, amplification back reflection is gone out；
And
Signal receives and processing system, including photodiode arrangement and signal processing system, and the photodiode arrangement is used
In receiving amplified laser beam signal and passing to signal processing system, the signal processing system carries out laser beam signal
Processing, to obtain the thermal expansion coefficient of sample.
2. the measuring device of thermal expansion coefficient as described in claim 1, which is characterized in that the laser reflection amplification mould group is extremely
It is provided with 2 groups less.
3. the measuring device of thermal expansion coefficient as described in claim 1, which is characterized in that be provided in the add in-place thermal station
Temperature control and record system, and temperature control and record system are connect with the signal processing system.
4. the measuring device of thermal expansion coefficient as described in claim 1, which is characterized in that the workbench is piezoelectricity sample
Platform.
5. the measuring device of thermal expansion coefficient as described in claim 1, which is characterized in that the laser reflection amplifies mould group packet
It includes: diode laser and laser mirror.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821715412.3U CN209460177U (en) | 2018-10-23 | 2018-10-23 | The measuring device of thermal expansion coefficient |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821715412.3U CN209460177U (en) | 2018-10-23 | 2018-10-23 | The measuring device of thermal expansion coefficient |
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| CN209460177U true CN209460177U (en) | 2019-10-01 |
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| CN201821715412.3U Active CN209460177U (en) | 2018-10-23 | 2018-10-23 | The measuring device of thermal expansion coefficient |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109406564A (en) * | 2018-10-23 | 2019-03-01 | 胜科纳米（苏州）有限公司 | The measuring device and method of thermal expansion coefficient |
-
2018
- 2018-10-23 CN CN201821715412.3U patent/CN209460177U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109406564A (en) * | 2018-10-23 | 2019-03-01 | 胜科纳米（苏州）有限公司 | The measuring device and method of thermal expansion coefficient |
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Legal Events
| Date | Code | Title | Description |
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| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address |
Address after: Room 507, building 09, Northwest District, Suzhou nano City, No. 99, Jinjihu Avenue, Suzhou Industrial Park, China (Jiangsu) pilot Free Trade Zone, Suzhou, Jiangsu 215000 Patentee after: Shengke nano (Suzhou) Co.,Ltd. Address before: 215123 507, building 09, Northwest District, Suzhou nano City, No. 99, Jinjihu Avenue, Suzhou Industrial Park, Jiangsu Province Patentee before: SHENGKE NANO (SUZHOU) Co.,Ltd. |
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| CP03 | Change of name, title or address |