CN109406564A - The measuring device and method of thermal expansion coefficient - Google Patents
The measuring device and method of thermal expansion coefficient Download PDFInfo
- Publication number
- CN109406564A CN109406564A CN201811234017.8A CN201811234017A CN109406564A CN 109406564 A CN109406564 A CN 109406564A CN 201811234017 A CN201811234017 A CN 201811234017A CN 109406564 A CN109406564 A CN 109406564A
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- China
- Prior art keywords
- laser
- microcosmic
- sample
- cantilever
- reflection
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N25/00—Investigating or analyzing materials by the use of thermal means
- G01N25/16—Investigating or analyzing materials by the use of thermal means by investigating thermal coefficient of expansion
Abstract
The invention discloses a kind of measuring device of thermal expansion coefficient and method, which includes: add in-place thermal station, for carrying and heating sample；Workbench is located at add in-place thermal station side；Microcosmic cantilever, one end are set to the top of the workbench, and the other end is contacted by nano-probe with the surface of sample, and the microcosmic cantilever surfaces are coated with reflecting layer；Laser source projects laser beam to the microcosmic cantilever；Laser reflection amplification mould group receives the laser beam reflected on the microcosmic cantilever, and amplification back reflection is gone out；And signal receives and processing system, the photodiode arrangement is for receiving amplified laser beam signal and passing to signal processing system, and the signal processing system handles laser beam signal, to obtain the thermal expansion coefficient of sample.The present invention utilizes laser reflection amplification principle, and nanoscale change in size caused by sample is thermally expanded effectively is amplified, to achieve the purpose that precise measurement thermal expansion coefficient.
Description
Technical field
The present invention relates to IC manufacturing field, in particular to the measuring device and method of a kind of thermal expansion coefficient.
Background technique
For measuring the thermal expansion coefficient of material, two basic parameters need precise measurement, i.e., when temperature and material are heated
Change in size.Wherein, the precise measurement of the heated generated dimensional variation of material is most challenging.It is primarily due to
Flexible size caused by thermal expansion and its small, such as SiO2Material, the coefficient of expansion only have 1 × 10-6/K.Therefore for a thickness of
10 microns of SiO2Thin-film material is only 0.01 nanometer of change in size per change in size caused by temperature change once.
Traditional thermal expansion measurement method requires test sample size in grade or more, and is just difficult to realize heat for thin-film material
The analysis and measurement of the coefficient of expansion.
Summary of the invention
The present invention provides the measuring device and method of a kind of thermal expansion coefficient, thus solve be difficult to analyze in the prior art and
The problem of measuring the thermal expansion coefficient of the following material of grade.
In order to solve the above technical problems, the present invention provides a kind of measuring device of thermal expansion coefficient, comprising: In Situ Heating
Platform, for carrying and heating sample；Workbench is located at add in-place thermal station side；Microcosmic cantilever, one end are set to the workbench
Top, the other end contacted by nano-probe with the surface of sample, also, the microcosmic cantilever surfaces are coated with reflecting layer；
Laser source, for projecting laser beam to the microcosmic cantilever；Laser reflection amplifies mould group, anti-on the microcosmic cantilever for receiving
The laser beam penetrated, amplification back reflection are gone out；And signal receives and processing system, including photodiode arrangement and signal processing
System, the photodiode arrangement is for receiving amplified laser beam signal and passing to signal processing system, the letter
Number processing system handles laser beam signal, to obtain the thermal expansion coefficient of sample.
Preferably, the laser reflection amplification mould group is at least provided with 2 groups.
Preferably, being provided with temperature control and record system in the add in-place thermal station, and temperature control and note
Recording system is connect with the signal processing system.
Preferably, the workbench is piezoelectricity sample stage.
Preferably, the laser reflection amplification mould group includes: diode laser and laser mirror.
The present invention also provides a kind of measurement methods of thermal expansion coefficient, using the measuring device, comprising:
Sample is placed in add in-place thermal station, while one end of microcosmic cantilever being connect by nano-probe and sample surfaces
Touching；
Laser source issue laser beam, laser beam through microcosmic cantilever surfaces reflection and laser reflection mould group reflection amplification after by
Photodiode arrangement receives；
Add in-place thermal station heating sample records heating temperature simultaneously, and sample surfaces expansion makes nano-probe and microcosmic cantilever
One end height change；
Laser source issues laser beam, again by light after the reflection of microcosmic cantilever surfaces and the reflection of laser reflection mould group amplification
Quick diode array receives；
The signal of photodiode arrangement is received before and after signal processing system twice and combines heating temperature parameter, calculating obtains
Take the thermal expansion coefficient of sample.
Compared with prior art, the present invention amplifies mould group using laser reflection, receives small caused by sample thermal expansion
The change in size of meter level is effectively amplified, and is received using signal and processing system effectively detects amplified change in size.To reach
To the purpose of precise measurement material thermal expansion coefficient.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the measuring device of thermal expansion coefficient of the invention.
Fig. 2 is the measuring principle schematic diagram of thermal expansion coefficient of the invention.
It is as shown in the figure: 10- add in-place thermal station, 20- workbench, the microcosmic cantilever of 30-, 40- nano-probe, 50- laser source,
60- laser reflection amplifies mould group, 70- photodiode arrangement, 80- signal processing system.
Specific embodiment
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, with reference to the accompanying drawing to the present invention
Specific embodiment be described in detail.It should be noted that attached drawing of the present invention is all made of simplified form and uses non-essence
Quasi- ratio, only for the purpose of facilitating and clarifying the purpose of the embodiments of the invention.
As shown in Figure 1, the present invention provides a kind of measuring device of thermal expansion coefficient, comprising: add in-place thermal station 10, workbench
20, the microcosmic cantilever 30 with nano-probe 40, laser source 50, laser reflection amplification mould group 60 and signal reception and processing system
System.
The add in-place thermal station 10 is provided with temperature control and note in the add in-place thermal station 10 for carrying sample 100
Recording system for accurately being heated and being made sample 100 to keep constant temperature to the sample 100, while recording the temperature of sample 100
Degree, in order to subsequent calculating.In general, the temperature control and record system use the constant temperature with data acquisition and storage function
Control equipment.
The workbench 20 uses piezoelectricity sample stage, is located at 10 side of add in-place thermal station, for carrying the microcosmic cantilever
30, the size of the microcosmic cantilever 30 is made of to hundreds of microns silicon or silicon nitride tens of, and 30 table of microcosmic cantilever
Face is coated with reflecting layer, for receiving the laser beam of the sending of laser source 50, and it is reflected away.
The other end of the microcosmic cantilever 30 is contacted by nano-probe 40 with the surface of sample 100.When sample 100 is heated
When expansion, the height of nano-probe 40 changes, so that the reflection angle of laser beam changes on microcosmic cantilever 30.
The laser reflection amplification mould group 60 amplifies it for receiving the laser beam reflected on the microcosmic cantilever 30
Back reflection is gone out.Specifically, the laser reflection amplification mould group 60 includes: diode laser (Laser Diode) and laser
Reflecting mirror.When sample expanded by heating, volume expansion shows as the variation of height, and microcosmic cantilever 30 is caused to move up, from
And make the laser beam for being radiated at microcosmic 30 end of cantilever reflection optical position as the displacement of microcosmic cantilever 30 and change, this
Result in the generation of laser spot position offset.The offset of laser facula is remembered by subsequent photodiode arrangement 70
Record is lower and is converted into the signal of electricity, so that signal processing system 80 makees signal processing.
It should be noted that sample thermally expands the minor change of caused laser beam reflection angle on microcosmic cantilever 30,
Mould group 60 can be amplified by laser reflection effectively to be amplified, and the multiplying power amplified can amplify by adjusting laser reflection
The quantity of mould group 60 is adjusted.And the amplification of ten thousand times of ranks may be implemented in multiple laser reflection amplification mould group 60, that is, thermally expands
Caused 0.01 nanometer of change in size can be amplified to 100 nanometers, and this amplified change in size can be connect by signal
It receives and processing system effectively, accurately detects, to reach the precise measurement of thermal expansion coefficient.
For the present embodiment amplification mould group 60 of the laser reflection described in 2 groups, illustrate the amplification of laser reflection amplification mould group 60
Principle.As shown in Fig. 2, when sample expanded by heating, microcosmic cantilever 30 is moved up, to make to be radiated at microcosmic 30 end of cantilever
The reflection angle of laser beam change so that projecting the incident angle in first group of laser reflection amplification mould group 60
It moves with facula position, by measuring the position amount of movement D1 of available hot spot, is put by first group of laser reflection
Laser beam after big 60 reflection of mould group is transmitted in second group of laser reflection amplification mould group 60, and is incident upon second group of laser
The position offset D2 of hot spot in reflection amplification mould group 60 is further increased, and relative to the expansion of sample, may be implemented ten thousand times
The amplification of rank.Further, above-mentioned position offset D1 and D2, can by the front and back of laser beam twice incidence angle and
Positional relationship between two groups of laser reflection amplification mould groups 60 and microcosmic cantilever 30, calculates and obtains.
The signal receives and processing system includes photodiode arrangement 70 and connects with the photodiode arrangement 70
The signal processing system 80 connect.Specifically, the photodiode arrangement 70 is for receiving amplified laser beam, and this is swashed
Light beam is converted to electric signal, and electric signal is passed to signal processing system 80, the signal processing system 80 to electric signal into
Row is handled, and 100 temperature data of sample recorded in combination temperature control and record system calculates the thermal expansion for obtaining sample 100
Coefficient.
Please continue to refer to Fig. 1, the present invention also provides a kind of measurement methods of thermal expansion coefficient, comprising:
Sample 100 to be measured is placed in add in-place thermal station 10, the thickness of usual sample 100 is in the micron-scale.
One end of microcosmic cantilever 30 is contacted by nano-probe 40 with 100 surface of sample；
Laser source 50 is opened, laser source 50 issues laser beam, and laser beam 50 is anti-through microcosmic 30 surface reflection of cantilever and laser
It is received after penetrating the reflection and amplification of mould group 60 by photodiode arrangement 70；
Add in-place thermal station 10 heats the heating temperature that sample 100 records sample 100 simultaneously, the heated rear surface of sample 100
Expansion makes the position of nano-probe 40 change, and the minor change of 40 position of nano-probe will lead to swashing on microcosmic cantilever 30
The reflection angle of light beam changes；
Laser source 50 issues laser beam, and (this time reflection angle and heating are preceding not for the surface reflection again through microcosmic cantilever 30
Together), the laser beam after reflection is received after the reflection of laser reflection mould group 60 amplification by photodiode arrangement 70 again；
80 front and back of signal processing system receives the signal of photodiode arrangement 70 twice and combines heating temperature parameter, meter
Calculate the thermal expansion coefficient for obtaining sample 100.
Obviously, those skilled in the art can carry out various modification and variations without departing from spirit of the invention to invention
And range.If in this way, these modifications and changes of the present invention belong to the claims in the present invention and its equivalent technologies range it
Interior, then the invention is also intended to include including these modification and variations.
Claims (6)
1. a kind of measuring device of thermal expansion coefficient characterized by comprising
Add in-place thermal station, for carrying and heating sample；
Workbench is located at add in-place thermal station side；
Microcosmic cantilever, one end are set to the top of the workbench, and the other end is contacted by nano-probe with the surface of sample, and
And the microcosmic cantilever surfaces are coated with reflecting layer；
Laser source, for projecting laser beam to the microcosmic cantilever；
Laser reflection amplifies mould group, and for receiving the laser beam reflected on the microcosmic cantilever, amplification back reflection is gone out；
And
Signal receives and processing system, including photodiode arrangement and signal processing system, and the photodiode arrangement is used
In receiving amplified laser beam signal and passing to signal processing system, the signal processing system carries out laser beam signal
Processing, to obtain the thermal expansion coefficient of sample.
2. the measuring device of thermal expansion coefficient as described in claim 1, which is characterized in that the laser reflection amplification mould group is extremely
It is provided with 2 groups less.
3. the measuring device of thermal expansion coefficient as described in claim 1, which is characterized in that be provided in the add in-place thermal station
Temperature control and record system, and temperature control and record system are connect with the signal processing system.
4. the measuring device of thermal expansion coefficient as described in claim 1, which is characterized in that the workbench is piezoelectricity sample
Platform.
5. the measuring device of hot expansion system as described in claim 1, which is characterized in that the laser reflection amplifies mould group packet
It includes: diode laser and laser mirror.
6. a kind of measurement method of thermal expansion coefficient, special using measuring device as claimed in any one of claims 1 to 5, wherein
Sign is, comprising:
Sample is placed in add in-place thermal station, while one end of microcosmic cantilever being contacted by nano-probe with sample surfaces；
Laser source issues laser beam, and laser beam is after the reflection of microcosmic cantilever surfaces and the reflection of laser reflection mould group amplification by photosensitive
Diode array receives；
Add in-place thermal station heating sample records heating temperature simultaneously, and sample surfaces expansion makes the one of nano-probe and microcosmic cantilever
End height changes；
Laser source issues laser beam, again by photosensitive two after the reflection of microcosmic cantilever surfaces and the reflection of laser reflection mould group amplification
Pole pipe array received；
The signal of photodiode arrangement is received before and after signal processing system twice and combines heating temperature parameter, calculates and obtains sample
The thermal expansion coefficient of product.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811234017.8A CN109406564A (en) | 2018-10-23 | 2018-10-23 | The measuring device and method of thermal expansion coefficient |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811234017.8A CN109406564A (en) | 2018-10-23 | 2018-10-23 | The measuring device and method of thermal expansion coefficient |
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| CN109406564A true CN109406564A (en) | 2019-03-01 |
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| CN201811234017.8A Pending CN109406564A (en) | 2018-10-23 | 2018-10-23 | The measuring device and method of thermal expansion coefficient |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110779455A (en) * | 2019-10-29 | 2020-02-11 | 燕山大学 | Device and process for measuring expansion amount of heated gear by laser reflection |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04132944A (en) * | 1990-09-25 | 1992-05-07 | Rikagaku Kenkyusho | Device for measuring thermal coefficient of expansion |
| CN2643281Y (en) * | 2003-08-07 | 2004-09-22 | 曾仲宁 | Light amplification measuring unit for tiny length change |
| CN103257152A (en) * | 2012-02-21 | 2013-08-21 | 中国科学院金属研究所 | Small-size solid sample thermal expansion measuring device |
| CN204374118U (en) * | 2015-02-12 | 2015-06-03 | 济南大学 | A kind of optical lever method measures the device of expansion coefficients of metal wire |
| CN107907561A (en) * | 2017-12-14 | 2018-04-13 | 南京林业大学 | The device and measuring method of multipath reflection laser optical lever metal linear expansion coefficient measurement |
| CN209460177U (en) * | 2018-10-23 | 2019-10-01 | 胜科纳米（苏州）有限公司 | The measuring device of thermal expansion coefficient |
-
2018
- 2018-10-23 CN CN201811234017.8A patent/CN109406564A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04132944A (en) * | 1990-09-25 | 1992-05-07 | Rikagaku Kenkyusho | Device for measuring thermal coefficient of expansion |
| CN2643281Y (en) * | 2003-08-07 | 2004-09-22 | 曾仲宁 | Light amplification measuring unit for tiny length change |
| CN103257152A (en) * | 2012-02-21 | 2013-08-21 | 中国科学院金属研究所 | Small-size solid sample thermal expansion measuring device |
| CN204374118U (en) * | 2015-02-12 | 2015-06-03 | 济南大学 | A kind of optical lever method measures the device of expansion coefficients of metal wire |
| CN107907561A (en) * | 2017-12-14 | 2018-04-13 | 南京林业大学 | The device and measuring method of multipath reflection laser optical lever metal linear expansion coefficient measurement |
| CN209460177U (en) * | 2018-10-23 | 2019-10-01 | 胜科纳米（苏州）有限公司 | The measuring device of thermal expansion coefficient |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110779455A (en) * | 2019-10-29 | 2020-02-11 | 燕山大学 | Device and process for measuring expansion amount of heated gear by laser reflection |
| CN110779455B (en) * | 2019-10-29 | 2021-03-26 | 燕山大学 | Device and process for measuring expansion amount of heated gear by laser reflection |
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