CN209447836U - A kind of UV LED chip - Google Patents
A kind of UV LED chip Download PDFInfo
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- CN209447836U CN209447836U CN201822123405.0U CN201822123405U CN209447836U CN 209447836 U CN209447836 U CN 209447836U CN 201822123405 U CN201822123405 U CN 201822123405U CN 209447836 U CN209447836 U CN 209447836U
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- refractive index
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Abstract
The utility model relates to a kind of UV LED chips, including p-type gallium nitride layer, quantum well layers, n type gallium nitride layer, transparent substrate and the transparent transition zone set gradually；The quantity of the transparent transition zone is at least two layers, and the refractive index of all transparent transition zones is between 1-1.76, and the refractive index of the transparent transition zone is gradually reduced toward the refractive index far from the transparent substrate；Wherein, the transparent transition zone is one of silica, barium fluoride, calcirm-fluoride, magnesium fluoride or lithium fluoride.UV LED chip provided by the utility model reduces the index step between the transparent substrate and air by the setting of the transparent transition zone, so that the slow transition of refractive index, reduces total reflection, improves light extraction efficiency.
Description
Technical field
The utility model relates to a kind of LED chip technical field more particularly to a kind of UV LED chips.
Background technique
For UV LED chip because its unique purposes is gradually paid attention to by market, existing ultraviolet chip mainly has SiC substrate
Vertical structure, Sapphire Substrate positive assembling structure and three kinds of inverted structure of Sapphire Substrate.Existing encapsulating structure is
Ultraviolet chip is packaged in inside it by packaging plastic.Since ultraviolet light has the function of accelerated ageing, especially UV-C
Wave band, often tolerance does not live the irradiation of UV ray and decomposes jaundice common packaging plastic (such as silica gel), and lamp bead is caused to fail.
In order to avoid the generation of this phenomenon, it is thus proposed that encapsulate ultraviolet chip using the packaged type without silica gel, also
It is not encapsulating silica gel on UV chip, but with structures such as quartz glass plates as seal protection.However the big portion of the packaged type
Divide UV light not transmit directly, but is totally reflected back and is depleted, by taking the inverted structure of Sapphire Substrate as an example,
The exit path of UV light is GaN- sapphire-air, wherein sapphire refractive index is 1.76, and the refractive index of air is 1,
There are huge index steps, during sapphire-air, have a big chunk UV light not transmit directly
Come, but be totally reflected back and lose, influences the light extraction efficiency of ultraviolet chip.
Various shortcomings based on above-mentioned ultraviolet chip, it is necessary to propose a kind of ultraviolet chip that light extraction efficiency is high, solve
Certainly problem above.
The utility model proposes a kind of UV LED chips, by the way that transition zone is arranged on the surface of chip, so that ultraviolet light
It is emitted in air in the slowly varying structure of refractive index, improves the light extraction efficiency of ultraviolet chip.
Summary of the invention
The technical problem to be solved by the present invention is to provide a kind of UV LED chips, by being arranged on the surface of chip
Transition zone, so that ultraviolet light is emitted in air in the slowly varying structure of refractive index, improve ultraviolet chip goes out light
Efficiency.
In order to solve the above-mentioned technical problem, the utility model proposes a kind of UV LED chips, including the p-type set gradually
Gallium nitride layer, quantum well layers, n type gallium nitride layer, transparent substrate and transparent transition zone；
The quantity of the transparent transition zone is at least two layers, the refractive index of all transparent transition zones between 1-1.76,
And the refractive index of the transparent transition zone is gradually reduced toward the refractive index far from the transparent substrate direction；
Wherein, the transparent transition zone is one of silica, barium fluoride, calcirm-fluoride, magnesium fluoride or lithium fluoride.
Preferably, the transparent substrate is transparent sapphire substrate, refractive index 1.76.
Preferably, the transparent transition zone is three layers, the first transparent mistake being respectively in contact with the transparent substrate
Layer is crossed, the second transparent transition zone for being in contact with the air and is located at the described first transparent transition zone and described second transparent
The transparent transition zone of third between transition zone.
Preferably, the described first transparent transition zone is the silicon dioxide layer that refractive index is 1.55.
Preferably, the second transparent transition zone is the layer of lithium fluoride that refractive index is 1.3.
Preferably, the transparent transition zone of third is the fluorination calcium layer that refractive index is 1.44.
It preferably, further include electrode layer, the electrode layer includes first electrode and second electrode, the first electrode and institute
It states p-type gallium nitride to be connected, the second electrode is connected with the n type gallium nitride.
Compared with prior art, the utility model has the beneficial effects that:
UV LED chip provided by the utility model, the refractive index ratio close to the transparent substrate is far from described transparent
The refractive index of substrate layer is big, and light is increasing, out after transparent substrate outgoing into the shooting angle behind next interface
The light penetrated mixes more evenly, and shooting angle increases, and improves the light extraction efficiency and light-emitting uniformity of LED chip, another party
Face reduces the index step between the transparent substrate and air by the setting of the transparent transition zone, so that folding
The slow transition of rate is penetrated, total reflection is reduced, improves light extraction efficiency.
Detailed description of the invention
Fig. 1 is the schematic diagram of the section structure of the utility model UV LED chip.
Specific embodiment
In order to make those skilled in the art more fully understand the technical solution of the utility model, with reference to the accompanying drawing with it is excellent
Selecting embodiment, the utility model is described in further detail.
As shown in Figure 1, a kind of UV LED chip, including the p-type gallium nitride layer 1, quantum well layers 2, N-type nitrogen set gradually
Change gallium layer 3, transparent substrate 4 and transparent transition zone 5；
The quantity of the transparent transition zone 5 is at least two layers, the refractive index of the transparent transition zone 5 between 1-1.76,
And the refractive index of the transparent transition zone 5 is gradually reduced toward the refractive index far from 4 direction of transparent substrate；
Wherein, the transparent transition zone 5 is one of silica, barium fluoride, calcirm-fluoride, magnesium fluoride or lithium fluoride.
The p-type gallium nitride layer 1 cooperates with the quantum well layers 2 and n type gallium nitride layer 3, generates electronics after energization
Transition, so that the ultraviolet light needed for generating, is herein conventional technical means in the art, details are not described herein again.
The transparent substrate 4 is for growing the p-type gallium nitride layer 1, the quantum well layers 2 and n type gallium nitride layer
3, it can be transparent sapphire substrate, transparent silicon carbide silicon substrate or transparent gallium arsenide substrate convenient for the smooth generation of ultraviolet light,
In the present embodiment, the transparent substrate 4 is transparent sapphire substrate, refractive index 1.76.
Herein it should be noted that the UV LED chip due to the utility model is flip LED chips, therefore its light goes out
Rays diameter is gallium nitride layer-transparent sapphire substrate-air, since the refractive index of air is 1, the refraction of transparent sapphire substrate
Rate is 1.76, therefore the difference of the refractive index between transparent sapphire substrate and air is larger, and there are biggish index step, light
When line is refracted in air from transparent sapphire substrate, it is easy to appear total reflection, light is confined in inside UV LED chip, shadow
Ring the light extraction efficiency of UV LED chip.
The transparent transition zone 5 improves the light extraction efficiency of LED chip, by least two layers for preventing light to be totally reflected
Transparent transition zone composition, the refractive index of at least two layers transparent transition zone 5 is between 1-1.76, and the transparent transition zone 5
The refractive index in refractive index toward the direction far from the transparent substrate 5 is gradually reduced.
Herein it should be noted that the refractive index of the close transparent substrate 4 is than the folding far from the transparent substrate
It is big to penetrate rate, light is increasing, the light of outgoing after the transparent substrate 4 outgoing into the shooting angle behind next interface
It mixes more evenly, and shooting angle increases, and improves the light extraction efficiency and light-emitting uniformity of LED chip, on the other hand, passes through institute
The setting for stating transparent transition zone 5 reduces the index step between the transparent substrate 4 and air, so that refractive index is slow
Slow transition reduces total reflection, improves light extraction efficiency.
Specifically, the transparent transition zone 5 is one in silica, barium fluoride, calcirm-fluoride, magnesium fluoride or lithium fluoride
Kind, with specific reference to actual needs, select the transparent transition zone.
In the present embodiment, the transparent transition zone 5 is three layers, first to be respectively in contact with the transparent substrate 4
Transparent transition zone 51, the transparent transition zone 52 of second to be in contact with the air and be located at the described first transparent transition zone 51 with
The transparent transition zone 53 of third between the second transparent transition zone 52.Wherein the described first transparent transition zone 51 is for refractive index
1.55 silicon dioxide layer, the second transparent transition zone 52 are the layer of lithium fluoride that refractive index is 1.3, and the transparent transition zone 53 of third is folding
Penetrate the fluorination calcium layer that rate is 1.44.By the structure design for three layers of transparent transition zone that refractive index is gradually submitted, substantially increase
The light extraction efficiency of UV LED chip.
For the ease of conduction, the UV LED chip further includes electrode layer 6, and the electrode layer 6 includes 61 He of first electrode
Second electrode 62, the first electrode 61 are connected with the p-type gallium nitride 1, the second electrode 62 and the n type gallium nitride
3 are connected.
Compared with prior art, the utility model has the beneficial effects that:
UV LED chip provided by the utility model, the refractive index ratio close to the transparent substrate is far from described transparent
The refractive index of substrate layer is big, and light is increasing, out after transparent substrate outgoing into the shooting angle behind next interface
The light penetrated mixes more evenly, and shooting angle increases, and improves the light extraction efficiency and light-emitting uniformity of LED chip, another party
Face reduces the index step between the transparent substrate and air by the setting of the transparent transition zone, so that folding
The slow transition of rate is penetrated, total reflection is reduced, improves light extraction efficiency.
The above is preferred embodiments of the present invention, it is noted that for the ordinary skill of the art
For personnel, without departing from the principle of this utility model, several improvements and modifications can also be made, these are improved and profit
Decorations are also considered as the protection scope of the utility model.
Claims (7)
1. a kind of UV LED chip, which is characterized in that including p-type gallium nitride layer, quantum well layers, the n type gallium nitride set gradually
Layer, transparent substrate and transparent transition zone；
The quantity of the transparent transition zone is at least two layers, and the refractive index of all transparent transition zones is between 1-1.76, and institute
The refractive index for stating transparent transition zone is gradually reduced toward the refractive index far from the transparent substrate direction；
Wherein, the transparent transition zone is one of silica, barium fluoride, calcirm-fluoride, magnesium fluoride or lithium fluoride.
2. UV LED chip according to claim 1, which is characterized in that the transparent substrate is transparent sapphire lining
Bottom, refractive index 1.76.
3. UV LED chip according to claim 1, which is characterized in that the transparent transition zone be three layers, respectively with
The first transparent transition zone that the transparent substrate is in contact, the transparent transition zone of second to be in contact with air and is located at described
The transparent transition zone of third between first transparent transition zone and the second transparent transition zone.
4. UV LED chip according to claim 3, which is characterized in that the first transparent transition zone is that refractive index is
1.55 silicon dioxide layer.
5. UV LED chip according to claim 3, which is characterized in that it is 1.3 that the second transparent transition zone, which is refractive index,
Layer of lithium fluoride.
6. UV LED chip according to claim 3, which is characterized in that it is 1.44 that the transparent transition zone of third, which is refractive index,
Fluorination calcium layer.
7. UV LED chip according to claim 1, which is characterized in that further include electrode layer, the electrode layer includes the
One electrode and second electrode, the first electrode are connected with the p-type gallium nitride, and the second electrode and the N-type nitrogenize
Gallium is connected.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201822123405.0U CN209447836U (en) | 2018-12-17 | 2018-12-17 | A kind of UV LED chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201822123405.0U CN209447836U (en) | 2018-12-17 | 2018-12-17 | A kind of UV LED chip |
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| Publication Number | Publication Date |
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| CN209447836U true CN209447836U (en) | 2019-09-27 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111029457A (en) * | 2019-12-31 | 2020-04-17 | 合肥彩虹蓝光科技有限公司 | Packaging structure and packaging method of deep ultraviolet light emitting diode |
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2018
- 2018-12-17 CN CN201822123405.0U patent/CN209447836U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111029457A (en) * | 2019-12-31 | 2020-04-17 | 合肥彩虹蓝光科技有限公司 | Packaging structure and packaging method of deep ultraviolet light emitting diode |
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