CN209446959U - A kind of light-source structure, optical projection mould group, sensing device and equipment - Google Patents
A kind of light-source structure, optical projection mould group, sensing device and equipment Download PDFInfo
- Publication number
- CN209446959U CN209446959U CN201821948507.XU CN201821948507U CN209446959U CN 209446959 U CN209446959 U CN 209446959U CN 201821948507 U CN201821948507 U CN 201821948507U CN 209446959 U CN209446959 U CN 209446959U
- Authority
- CN
- China
- Prior art keywords
- luminescence unit
- light
- subregion
- source structure
- luminescence
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Abstract
The utility model is suitable for optics and electronic technology field, provides a kind of light-source structure, is used to emit progress three-dimensional sense survey on light beam to a measured target object.The light-source structure includes semiconductor base and multiple luminescence units for being formed on the semiconductor base.The luminescence unit is with the formal distribution of two-dimensional lattice on the semiconductor base.Exist in the luminescence unit and refers to subregion.And this is greater than or equal to the product for gathering the average value of ratio value related coefficient corresponding with luminescence unit subregion each in the set for accounting for whole luminescence units composed by the luminescence unit subregion of preset threshold with reference to the related coefficient between subregion more than or equal to 0.25 and less than 1.The utility model also provides a kind of optical projection mould group, sensing device and equipment using the light-source structure.
Description
Technical field
The utility model belongs to optical technical field more particularly to a kind of light-source structure, optical projection mould group, sensing device
And equipment.
Background technique
Existing three-dimensional (Three Dimensional, 3D) sensing mould group, which generallys use, has irregular distribution luminous single
The light-source structure of member carries out three-dimensional sensing to project corresponding irregular distribution spot pattern.However, in semiconductor base
The upper luminescence unit for forming irregular distribution needs to carry out luminescence unit precise positioning, and manufacture difficulty is high.And if in order to drop
Luminescence unit distribution is designed to that regular pattern is arranged by low manufacture difficulty, then the regular spot pattern cast out can be because of phase
It is too similar to positional relationship and cannot achieve three-dimensional sensing, and if thinking applying rules arrangement luminescence unit to project irregular point
The regular distribution light that the spot pattern of cloth also needs particularly customized complicated diffraction optical element out to launch light source
Field carries out rearrangement, but such complicated diffraction optical element involves great expense, and is unfavorable for product promotion.
Utility model content
The utility model provide it is a kind of for realizing three-dimensional sensing light-source structure, optical projection mould group, sensing device and
Equipment.
The utility model embodiment provides a kind of light-source structure, is used to emit and carries out on light beam to a measured target object
Three-dimensional sensing.The light-source structure includes semiconductor base and multiple luminescence units for being formed on the semiconductor base.Institute
Luminescence unit is stated with the formal distribution of two-dimensional lattice on the semiconductor base.Exist in the luminescence unit and refers to sub-district
Domain.It is greater than or equal to composed by the luminescence unit subregion of preset threshold with this with reference to the related coefficient between subregion and gathers
Account for the average value of the ratio value related coefficient corresponding with luminescence unit subregion each in the set of whole luminescence units
Product is more than or equal to 0.25 and less than 1.
In some embodiments, the luminescence unit number for including with reference to subregion accounts for whole luminescence unit sums
Ratio is greater than or equal to 10%；Or the reference subregion includes ten or more luminescence units.
In some embodiments, the sum of whole luminescence units is greater than or equal to 50.
In some embodiments, the related coefficient is normalizated correlation coefficient, the preset correlation coefficient threshold
It is 0.3.
In some embodiments, the product is more than or equal to 0.5 and less than 1.
In some embodiments, set composed by the luminescence unit subregion accounts for the ratio value of whole luminescence units
Luminescence unit number to include in set composed by the luminescence unit subregion accounts for the ratio of whole luminescence unit total numbers
Example；Or it is luminescence unit subregion that set composed by the luminescence unit subregion, which accounts for the ratio value of whole luminescence units,
The sum of area accounts for the ratio of the entire light emitting region gross area.
The utility model embodiment provides a kind of optical projection mould group, for projecting the patterning light with predetermined pattern
Three-dimensional sense survey is carried out on beam to measured target object comprising light beam adjustment element, patterned optical element and as above-mentioned any one
The light-source structure that embodiment provides.The light beam adjustment element be used for light beam that light-source structure is issued be adjusted so that
It meets preset propagation characteristic requirement.The patterned optical element for being arranged the light field that light-source structure issues again
Cloth is to form the patterned beam with predetermined pattern.
In some embodiments, the optical projection mould group further includes driving circuit, and the driving circuit provides electric current
It is luminous to drive the luminescence unit to carry out.
The utility model embodiment provides a kind of sensing device, is used to sense the three-dimensional information of measured target object.Its
The optical projection mould group and sensing mould group provided including above embodiment, the sensing mould group is for sensing the optics module
The predetermined pattern projected on measured target object and the image by analyzing the predetermined pattern obtain the three-dimensional of tested subject matter
Information.
The utility model embodiment provides a kind of equipment, the sensing device provided including above embodiment.It is described to set
The three-dimensional information of the standby measured target object sensed according to the sensing device executes corresponding function.
Light-source structure provided by the utility model embodiment, optical projection mould group, sensing device and equipment are because described in
The mutual arrangement position of the luminescence unit of different luminescence unit set has correlation, and the luminescence unit is semiconductor-based
Position on bottom can relatively easily realize accurate determination, reduce manufacture difficulty.
The additional aspect and advantage of the utility model embodiment will be set forth in part in the description, partially will be under
Become obvious in the description in face, or is recognized by the practice of the utility model embodiment.
Detailed description of the invention
Fig. 1 is the structural schematic diagram for the light-source structure that the utility model first embodiment provides.
Fig. 2 is the luminescence unit distribution schematic diagram of light-source structure described in Fig. 1.
Fig. 3 is the structural schematic diagram for the light-source structure that the utility model second embodiment provides.
Fig. 4 is the structural schematic diagram for the light-source structure that the utility model third embodiment provides.
Fig. 5 is the structural schematic diagram for the light-source structure that the 4th embodiment of the utility model provides.
Fig. 6 is to calculate related coefficient schematic diagram between luminescence unit set not of uniform size.
Fig. 7 is the structural schematic diagram for the light-source structure that the 5th embodiment of the utility model provides.
Fig. 8 is the structural schematic diagram for the light-source structure that the utility model sixth embodiment provides.
Fig. 9 is the structural schematic diagram for the optics module that the 7th embodiment of the utility model provides.
Figure 10 is the structural schematic diagram for the sensing device that the 8th embodiment of the utility model provides.
Figure 11 is the structural schematic diagram for the equipment that the 9th embodiment of the utility model provides.
Specific embodiment
Presently filed embodiment is described below in detail, the example of the embodiment is shown in the accompanying drawings, wherein from beginning
Same or similar element or element with the same or similar functions are indicated to same or similar label eventually.Below by ginseng
The embodiment for examining attached drawing description is exemplary, and is only used for explaining the application, and should not be understood as the limitation to the application.?
In the description of the present application, it is to be understood that term " first ", " second " are only used for describing, and should not be understood as instruction or dark
Show relative importance or implicitly indicates the quantity of indicated technical characteristic or put in order.Define as a result, " first ",
The technical characteristic of " second " can explicitly or implicitly include one or more technical characteristic.In retouching for the application
In stating, the meaning of " plurality " is two or more, unless otherwise specifically defined.
In the description of the present application, it should be noted that unless otherwise specific regulation or limit, term " installation ", " phase
Even ", " connection " shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or integration connection；It can
To be mechanical connection, it is also possible to be electrically connected or is in communication with each other；It can be directly connected, the indirect phase of intermediary can also be passed through
Even, the connection inside two elements or the interaction relationship between two elements be can be.For the ordinary skill of this field
For personnel, the concrete meaning of above-mentioned term in this application can be understood as the case may be.
Following disclosure provides many different embodiments or example is used to realize the different structure of the application.In order to
Simplify disclosure herein, hereafter only to the component of specific examples and being set for describing.Certainly, they are merely examples, and
And purpose does not lie in limitation the application.In addition, the application can reuse reference number and/or reference word in different examples
Mother, this reuse are itself not indicate the various embodiments discussed to simplify and clearly state the application
And/or the particular kind of relationship between setting.In addition, the application in the following description provided by various specific techniques and material only
For the example for realizing technical scheme, but those of ordinary skill in the art should be aware that the technical solution of the application
It can be realized by other techniques for not describing hereafter and/or other materials.
Further, described feature, structure can be incorporated in one or more embodiment party in any suitable manner
In formula.In the following description, many details are provided so as to fully understand presently filed embodiment.However, this
Field technical staff will be appreciated that even if without one or more in the specific detail, or using other structures, group
Member etc. can also practice the technical solution of the application.In other cases, it is not shown in detail or describes known features or operation
To avoid the emphasis of fuzzy the application.
It should be understood that embodiments described herein and/or method are exemplary in itself, it is not construed as pair
The limitation of technical scheme.Embodiment or method described herein are only that the application the relevant technologies thought is covered
One of numerous technical solutions are a variety of, therefore each step of described method and technology scheme can be according to being indicated
Order executes, and can execute, may be performed simultaneously, or be omitted in some cases, above-mentioned change according to other order
It is regarded as the range that the application technical solution claimed is covered.
As shown in Figure 1, the application first embodiment provides a kind of light-source structure 1, for emitting light beam to one tested
Three-dimensional sense survey is carried out on object.The light beam can be the light beam with specific wavelength according to sensing principle and application scenarios.
In the present embodiment, the light beam is used to sense the three-dimensional information of measured target object, can be infrared or near-infrared wavelength light
Beam, wave-length coverage are 750 nanometers (Nanometer, nm) to 1650nm.
The light-source structure 1 includes semiconductor base 10, the multiple luminescence units being formed on the semiconductor base 10
12, anode 14 and cathode 16.The luminescence unit 12 is the semiconductor structure that can be shone under electric excitation effect, passes through light
The techniques such as quarter, etching and/or Metallo-Organic Chemical Vapor deposition are formed on the semiconductor base 10.For example, described shine
Unit 12 can be, but be not limited to, vertical cavity surface emitting laser (Vertical Cavity Surface Emitting
Laser,VCSEL).The anode 14 and cathode 16 are separately positioned in the opposite both ends of the surface of the semiconductor base 10, to lead
Entering current signal, to excite the luminescence unit 12 to carry out luminous.The excitation current is greater than 1mA.
It is understood that in other embodiments, the luminescence unit 12 can also be light emitting diode (Light
Emitting Diode, LED) or laser diode (Laser Diode, LD).Therefore, the luminescence unit 12 be selected from VCSEL,
In LED and LD any one and combinations thereof.
Also referring to Fig. 1 and Fig. 2, the luminescence unit 12 is with the formal distribution of two-dimensional lattice in the semiconductor base
In 10 light emitting region, the non-equidistant arrangement on semiconductor base 10 of wherein at least three adjacent light-emitting units 12.It is described complete
Portion's luminescence unit 12 has correlation on the whole.
The correlation for assessing arrangement pattern composed by the multiple luminescence unit 12 be usually pass through calculate it is the multiple
Related coefficient f between luminescence unit 12nIt carries out, if the related coefficient f being calculatednMore than or equal to preset threshold, then
Think that there is correlation between the luminescence unit 12.
The related coefficient fnCalculation formula can be but be not limited to normalizated correlation coefficient formula (Normalized
Correlation Coefficient, NCC), expression formula is as follows:
Wherein,The R0For according to pre-
If the luminescence unit 12 that condition is arbitrarily chosen in all luminescence units 12 on semiconductor base 10 refers to subregion, with described
Luminescence unit 12 refers to subregion R0Entire 10 light emitting region of semiconductor base is traversed in addition to R0Other parts in addition simultaneously calculate institute
It states luminescence unit 12 and refers to subregion R0With the luminescence unit subregion R passed through in ergodic processnRelated coefficient fn.It is described H is the luminescence unit 12 investigated
Subregion RnHeight, W is the 12 subregion R of luminescence unit that is investigatednWidth.The selection luminescence unit 12 refers to sub-district
Domain R0Preset condition be selected luminescence unit 12 accounted for reference to 12 numbers of luminescence unit that subregion includes all shine it is single
The ratio of 12 sum of member is more than or equal to 10% or selected luminescence unit 12 includes ten or more with reference to subregion and shines
Unit 12.The sum of the whole luminescence unit 12 is greater than or equal to 50.
It is understood that the luminescence unit 12 refers to subregion R0Using the side translated in plane right-angle coordinate
Formula is traversed.When calculate the normalizated correlation coefficient of the luminescence unit 12 in order to exclude arrangement pattern described in hair
Influence of the background area to normalizated correlation coefficient other than light unit 12, before being calculated in the luminescence unit 12
The heart is that origin expands the region of luminescence unit 12, to avoid when 12 physical size of luminescence unit is smaller, is arranged because entire
Background area specific gravity is excessive in cloth pattern, and it is luminous that the normalizated correlation coefficient after above-mentioned formula calculates can not be reflected
True correlation between unit 12.For example, the lower luminescence unit 12 of correlation is arranged, pattern can also calculate higher normalizing
Change related coefficient.After the above-mentioned 12nd area extension of a field to luminescence unit the specific gravity of background area is reduced, calculates
The normalizated correlation coefficient of the arrangement pattern of luminescence unit 12 can reflect the practical correlation between luminescence unit 12 to the maximum extent
Property.12 region of each luminescence unit is expanded with identical scale, and the degree of expansion should meet adjacent hair after expansion
12 region of light unit does not overlap.
Alternatively, it is also possible to only take luminescence unit 12 with reference to son when related coefficient calculating is normalized according to above-mentioned formula
Region R0With traversed luminescence unit subregion RnCorresponding coordinate in region shared by the interior luminescence unit 12, without taking background
The corresponding coordinate in region.That is, R (i, j)=1 (i, j take corresponding coordinate in region shared by luminescence unit), to exclude to return in calculating
Background area is influenced caused by 12 true correlation of luminescence unit when one change related coefficient.
It is understood that in other embodiments, the luminescence unit 12 refers to subregion R0It can also be sat in pole
It is traversed in a manner of being rotated around coordinate origin in mark system.
The normalizated correlation coefficient f calculated according to above-mentioned normalizated correlation coefficient formulanValue range be 0≤fn
≤1.If fn=0, illustrate that selected luminescence unit 12 refers to subregion R0In luminescence unit 12 and traversal when pass through shine
12 subregion R of unitnIn luminescence unit 12 be staggered completely without any coincidence, i.e., the described luminescence unit 12 refers to subregion
R0With 12 subregion R of luminescence unitnIt is completely uncorrelated.
If fnThe selected luminescence unit 12 of=1 explanation refers to subregion R0In luminescence unit 12 and when traversal pass through
12 subregion R of luminescence unitnIn luminescence unit 12 it is the same, i.e., the described luminescence unit 12 refers to subregion R0With luminous list
12 subregion R of membernIt is perfectly correlated.
If 0 < fnThe selected luminescence unit 12 of < 1 explanation refers to subregion R0In luminescence unit 12 and when traversal pass through
12 subregion R of luminescence unitnIn luminescence unit 12 partially overlap, i.e., the luminescence unit 12 refers to subregion R0With luminous list
12 subregion R of membernPart is related, the normalizated correlation coefficient fnIt is more big, illustrate selected luminescence unit 12 with reference to sub-district
Domain R0In luminescence unit 12 and the 12 subregion R of luminescence unit that passes through when traversalnIn luminescence unit 12 overlap more
More, i.e., the described luminescence unit 12 refers to subregion R0With 12 subregion R of luminescence unitnBetween correlation it is higher.
If the normalizated correlation coefficient fn>=0.3, then it is believed that the luminescence unit 12 refers to subregion R0With luminous list
12 subregion R of membernCorrelation has correlation between the luminescence unit 12.If the normalizated correlation coefficient fn>=0.5, then may be used
Think that the luminescence unit 12 refers to subregion R0With 12 subregion R of luminescence unitnIt is highly relevant, between the luminescence unit 12
With high correlation.
In the present embodiment, the related coefficient is normalizated correlation coefficient fn, the preset threshold is 0.3, i.e. institute
It states luminescence unit 12 and refers to subregion R0The normalizated correlation coefficient f being calculated if it exists in ergodic processn>=0.3, or
Person says that the luminescence unit 12 refers to subregion R0The normalizated correlation coefficient f being calculated in ergodic processnPeak value
fn_max>=0.3 it is believed that have correlation on the whole between the luminescence unit 12.
Because having correlation, position energy of the luminescence unit 12 on semiconductor base 10 between the luminescence unit 12
It is enough easier to determine, reduces manufacture difficulty.
As shown in figure 3, the second embodiment of the application provides a kind of light-source structure 2, in first embodiment
Light-source structure 1 it is essentially identical, in addition to described in considering when the main distinction is to assess the correlation between the luminescence unit 22
It is gone back other than the normalizated correlation coefficient of luminescence unit 22 while considering to be greater than or equal to preset normalizated correlation coefficient threshold value
Luminescence unit 22 accounts for the ratio of whole luminescence units 22 more objectively to assess the correlation between the luminescence unit 22.
The strength of correlation function for assessing correlation power between the luminescence unit 22 is defined as a result,The luminescence unit 22 that wherein a is greater than or equal to preset correlation coefficient threshold for related coefficient accounts for whole luminescence units
22 ratio, calculation formula areWherein R0It shines for what is chosen according to preset condition
Unit 22 refers to subregion, refers to subregion R with the luminescence unit 220It traverses entire 20 light emitting region of semiconductor base and counts
It calculates the luminescence unit 22 and refers to subregion R0With entire 20 light emitting region of semiconductor base in addition to R0The phase of other parts in addition
Relationship number, it is assumed that there are N number of and R0Between related coefficient be greater than or equal to of luminescence unit 22 of preset correlation coefficient number threshold value
Region is expressed as R1,…,RN, then the P is indicated in entire 20 light emitting region of semiconductor base and the luminescence unit 22
With reference to subregion R0Between related coefficient be greater than or equal to preset correlation coefficient number threshold value all luminescence units 22 set { R0,
R1,…,RN, the set P={ R0,R1,…,RNIn luminescence unit 22 between have correlation.The S is entirely partly to lead
The set of whole luminescence units in body substrate 20.The ratio can be but be not limited to the luminescence unit 22 of correlation
Number accounts for the ratio of whole 22 total numbers of luminescence unit, or the region area where the luminescence unit 22 with correlation accounts for entirely
The ratio in the total face in light emitting region is assessed, and can be selected according to the actual situation.
The P and S can be 22 numbers of luminescence unit in the corresponding set of luminescence unit 12.If the luminescence unit 22 is
Even distribution, the P and S are also possible to corresponding luminescence unit 22 and gather region area.It is understood that P and S herein
R is directed in calculating0,R1,…,RNIn the lap that is likely to occur be only calculated once without computing repeatedly.
It is describedFor the set P={ R0,R1,…,RNIn all 22 subregion R of luminescence unitn(0 < n≤N) with it is described
Luminescence unit 22 refers to subregion R0Between normalizated correlation coefficient fnAverage value, calculation formula is
Wherein fnFor Rn(0 < n≤N) and R0Between normalizated correlation coefficient.
In the present embodiment, because the preset correlation coefficient threshold is 0.3, that is, work as fnWhen >=0.3, it is believed that corresponding
22 subregion R of luminescence unitnLuminescence unit 12 and selected luminescence unit 22 in (0 < n≤N) refer to subregion R0Between
With correlation, the 22 subregion R of luminescence unitn(0 < n≤N) can operate with strength of correlation function defined aboveTo assess the overall relevancy of all luminescence units 22 on the semiconductor base 10.
The a is the ratio that the luminescence unit 22 with correlation accounts for whole luminescence units 22, so 0≤a≤1.It is described
For normalizated correlation coefficient fnAverage value, soTherefore, strength of correlation functionIt is calculated
The strength of correlation value F come also meets value range 0≤F≤1.If 0≤F of the strength of correlation value F satisfaction of definition herein <
0.1, whole luminescence units 22 on the semiconductor base 10 are uncorrelated on the whole.If the strength of correlation value F meets 0.1
≤ F < 0.25, whole luminescence units 22 on the semiconductor base 20 weak correlation on the whole.If the strength of correlation value F is full
Foot 0.25≤F < 0.5, whole luminescence units 22 on the semiconductor base 20 have correlation on the whole.If the correlation
Intensity value F meets 0.5≤F≤1, the strong correlation on the whole of whole luminescence units 22 on the semiconductor base 20.
It is understood that being calculated for luminescence unit 22 identical on the semiconductor base 20 arrangement pattern
The strength of correlation value F come may refer to subregion R with luminescence unit 22 selected in calculating process0Difference and become
Change, be not always consistent, so the phase of whole luminescence units 22 on the whole on judging the semiconductor base 20
Subregion R is referred to according to all luminescence units 22 for meeting preset condition when closing property intensity0The strength of correlation calculated
Maximum value in value F is judged.That is, referring to sub-district simply by the presence of the luminescence unit 22 chosen according to preset condition
Domain R0, so that referring to subregion R according to the luminescence unit 220The strength of correlation value F calculated meets correlation defined above
Property intensity correspondence range be it is believed that the semiconductor base 20 on luminescence unit 22 on the whole have corresponding correlation
Intensity.
In the present embodiment, whole luminescence units 22 on the semiconductor base 20 have correlation on the whole.Institute
State the maximum value F of the strength of correlation value F of whole luminescence units 22 on the wholemaxMore than or equal to 0.25 less than 1.Exist
Subregion R is referred to according to the luminescence unit 22 that preset condition is chosen0The strength of correlation value F calculated is greater than or equal to
0.25 and less than 1.
It is understood that in other embodiments, whole luminescence units 22 on the semiconductor base 20 are whole
It is upper that there is strong correlation.The maximum value F of the strength of correlation value F of the whole luminescence unit 22 on the wholemaxIt is greater than or equal to
0.5 and less than 1.Exist and refers to subregion R according to the luminescence unit 22 that preset condition is chosen0The correlation calculated is strong
Angle value F is more than or equal to 0.5 and less than 1.
As shown in figure 4, the third embodiment of the application provides a kind of light-source structure 3, in second embodiment
Light-source structure 2 it is essentially identical, the main distinction is to refer to subregion R calculating selected luminescence unit 320With traversed
30 light emitting region other parts of semiconductor base between related coefficient fnWhen investigate is the luminescence unit 32 with reference to son
Region R0With the 32 subregion R of luminescence unit traversednThe luminescence unit 32 that (0 < n≤N) is obtained after transformation T changes son
Region R 'nNormalizated correlation coefficient f between (0 < n≤N)n.The transformation T can be but be not limited to affine transformation, described affine
Transformation includes the transformation such as translation, rotation, mirror image.In the present embodiment, the transformation T is ginseng with plane right-angle coordinate
According to.
That is, original 32 subregion R of luminescence unit on the semiconductor base 30n(0 < n≤N) is after the transformation T
Obtained luminescence unit 32 converts subregion R 'nSubregion R is referred to selected luminescence unit 320Between normalization it is related
Coefficient fnMeet fnWhen >=0.3, by the 32 subregion R of luminescence unitn32 numbers of luminescence unit of (0 < n≤N) are returned with corresponding
One changes related coefficient fnApply to strength of correlation function defined aboveTo assess institute on the semiconductor base 30
There is the overall relevancy of luminescence unit 32.In the present embodiment, the normalizated correlation coefficient fnExpression formula it is as follows:
Wherein, R 'n=T (Rn),H
For the 32 subregion R of luminescence unit investigatednThe height of (0 < n≤N), W are the 32 subregion R of luminescence unit that is investigatedn(0<n≤
N width).
As shown in figure 5, the 4th embodiment of the application provides a kind of light-source structure 4, in first embodiment
Light-source structure 1 it is essentially identical, it is more that the main distinction is that whole luminescence units 42 on the semiconductor base 40 can be divided into
A luminescence unit set 420, herein multiple refer to two and more than two.Have between the luminescence unit set 420
Correlation.At least exist between the luminescence unit 42 inside the luminescence unit set 420 and does not have correlation.
Correlation between the luminescence unit set 420 can be by calculating the normalizing between luminescence unit set 420
Change related coefficient fnTo be assessed.Calculation formula as set forth above, it is possible to are as follows:
Wherein, R0And RnRespectively need to calculate normalization relative coefficient fnTwo luminescence unit set 420,H is the luminescence unit collection investigated
Close 420 height, W for the luminescence unit set 420 investigated width.The normalizated correlation coefficient fnNumberical range be
0≤fn≤ 1, work as fnWhen < 0.3, it is believed that do not have correlation between the luminescence unit set 420；Work as fnWhen >=0.3, it is believed that institute
Stating has correlation between luminescence unit set 420；Work as fnWhen >=0.5, it is believed that height phase between the luminescence unit set 420
It closes.
In the present embodiment, 42 numbers of luminescence unit included by the luminescence unit set 420 be more than or equal to 10, or
The ratio that the number of luminescence unit 42 included by person accounts for whole 42 total numbers of luminescence unit is greater than or equal to 10%.It is described to shine
0.3≤f of normalizated correlation coefficient between unit set 420n<1。
It is understood that in other embodiments, being also possible between the luminescence unit set 420 highly relevant
, 0.5≤f of normalizated correlation coefficient between the luminescence unit set 420n<1。
It is understood that as shown in fig. 6, the if area of the luminescence unit set 420 and luminescence unit set 421 that are divided
Domain size and/or included 42 numbers of luminescence unit are inconsistent, then can be used one of them luminescence unit set 420
Periphery is extended around to form a sufficiently large region 400 and can accommodate another luminescence unit set 421 around the hair
The periphery of light unit set 420 translates one week.At this point, by the luminescence unit set 421 as one with reference to subregion according to
Above-mentioned normalizated correlation coefficient fnFormula traversed in the extended area 400 calculate in whole region 400 it is described shine
Normalizated correlation coefficient f between unit 42nAs returning between above-mentioned luminescence unit set 420 and luminescence unit set 421
One changes related coefficient fn.It should be noted that in above-mentioned normalizated correlation coefficient fnCalculating process in need extended area
Coordinate value all values in 400 other than luminescence unit set 420 and luminescence unit set 421 are 0, to eliminate expansion
To the normalizated correlation coefficient between luminescence unit 42 existing for script in luminescence unit set 420 and luminescence unit set 421
fnCaused by influence.
It should be noted that between the luminescence unit set 420 there is correlation can be the list that shines described in every two
Phase cross-correlation between member set 420, being also possible at least exist between two luminescence unit set 420 has the case where correlation
And and not all luminescence unit set 420 it is all related each other.
The correlation between luminescence unit 42 inside the luminescence unit set 420 uses to be remembered in first embodiment
The strength of correlation function of loadIt is assessed, specific calculating process please refers to pair in above-mentioned first embodiment
Content is answered, details are not described herein again.In the present embodiment, there are shining inside luminescence unit set 420 described at least one
Do not have correlation between unit 42, the correlation intensity value F between whole luminescence units 42 in the luminescence unit set 420≤
0.1。
As shown in fig. 7, the 5th embodiment of the application provides a kind of light-source structure 5, in the 4th embodiment
Light-source structure 4 it is essentially identical, the main distinction is that the luminescence unit collection uraphetine includes third class luminescence unit set 521
And the 4th class luminescence unit set 522.Do not have correlation between luminescence unit 52 in the third class luminescence unit set 521
Property.Luminescence unit 52 in the third class luminescence unit set 521 is arranged according to identical first layout viewing case.Institute
It states and does not have correlation between the luminescence unit in the 4th class luminescence unit set 522.The 4th class luminescence unit set 522
Interior luminescence unit 52 is arranged according to identical second layout viewing case, the second layout viewing case and the first layout viewing case
It is different.Do not have correlation between inhomogeneous luminescence unit set 521 and 522.That is, inhomogeneous luminescence unit set 521
And the normalizated correlation coefficient between 522 is less than 0.3.
In the present embodiment, whole luminescence units 52 on the semiconductor base 50 can be divided into nine luminescence units
Collect uraphetine.Wherein, the number of the third class luminescence unit set 521 is four, the 4th class luminescence unit set 522
Number be five.Each described luminescence unit collection uraphetine includes at least ten luminescence units 52.It is understood that
It is that the position of the third class luminescence unit set 521 and the 4th class luminescence unit set 522 can be appointing in matrix arrangement
It anticipates a lattice, as long as meeting the requirement of corresponding number and pattern of arranging.
In other embodiments, the total number of the luminescence unit collection uraphetine is not limited to nine, and arrangement mode is also unlimited
It arranges in nine grids or matrix.As long as meeting at least one third class luminescence unit set 521 and at least one institute
State the condition of the 4th class luminescence unit set 522.
As shown in figure 8, the sixth embodiment of the application provides a kind of light-source structure 6, in the 4th embodiment
Light-source structure 4 it is essentially identical, the main distinction be the light-source structure 6 include two luminescence unit set 620.It is each to shine
Do not have correlation between luminescence unit 62 in unit set 620.There is phase between the two described luminescence unit set 620
Guan Xing.That is, 0.3≤f of normalizated correlation coefficient between described two luminescence unit set 620n≤ 1, each luminescence unit 620
Normalizated correlation coefficient f between interior luminescence unit 62n<0.3.In the present embodiment, each luminescence unit set
It include at least 100 incoherent luminescence units 62 in 620.
As shown in figure 9, the 7th embodiment of the application provides a kind of optical projection mould group 7, preset for projecting to have
It is sensed in the patterned beam of pattern to measured target object.The optical projection mould group 7 includes light beam adjustment element 70, figure
Case optical element 72 and the above-mentioned first light-source structure 1 into sixth embodiment.
The light beam adjustment element 70 includes but is not limited to collimating element, beam-expanding element, reflecting element, optical microlens battle array
Column group and grating.The light beam that the light beam adjustment element 70 is used to issue light-source structure 1 is adjusted, so that it meets in advance
If propagation characteristic requirement, such as: the direction of propagation, collimation, light beam aperture etc..The patterned optical element 72 is used for light
The light field that source structure 1 issues carries out rearrangement, to form the patterning that can project predetermined pattern on measured target object
Light beam.The patterned optical element 72 includes but is not limited to diffraction optical element (Diffractive Optical
Element, DOE), one or more of optical micro lens array group or grating.In the present embodiment, the diffraction optics
Element is unfolded to form patterned beam throwing within the scope of predetermined angle after being replicated the light beam that the light-source structure 1 issues
It is incident upon on measured target object.
As shown in Figure 10, the 8th embodiment of the application provides a kind of sensing device 8, is used to sense measured target object
Three-dimensional information.The spatial information of the measured target object sensed can be used for identifying measured target object or construct measured target
The threedimensional model of object.
The sensing device 8 includes the optical projection mould group 7 as provided by above-mentioned 7th embodiment and sensing mould group 80.
The optical projection mould group 7 is for projecting particular beam to measured target object.The sensing mould group 80 includes camera lens 81, image
Sensor 82 and image analysis processor 83.Described image sensor 82 senses the patterned beam tested by camera lens 81
The image formed on object.Described image analysis processor 83 analyzes the image being incident upon on measured target object sensed
To obtain the three-dimensional information of measured target object.
In the present embodiment, the sensing device 8 is to sense the three-dimensional information on measured target object surface and identify accordingly
The three-dimensional face authentification device of measured target object identity.
The predetermined pattern that the sensing mould group 80 projects on measured target object according to the patterned beam sensed
Change in shape come analyze measured target object surface three-dimensional information and accordingly to measured target object carry out face recognition.
As shown in figure 11, the 9th embodiment of the application provides a kind of equipment 9, such as mobile phone, laptop, plate electricity
Brain, touch-control interaction screen, door, the vehicles, robot, automatic numerical control lathe etc..The equipment 9 include at least one the above-mentioned 8th
Sensing device 8 provided by embodiment.The equipment 9 is for corresponding to execution phase according to the sensing result of the sensing device 8
The function of answering.The corresponding function include but is not limited to unlock, pay after identifying user's identity, start it is preset using journey
Appointing in the mood and health condition of user is judged using depth learning technology after sequence, avoidance, identification user's countenance
It anticipates one or more.
In the present embodiment, the sensing device 8 is to sense the three-dimensional information on measured target object surface and identify accordingly
The three-dimensional face authentification device of measured target object identity.The equipment 9 is mobile phone, pen equipped with the three-dimensional face authentification device
Remember the electric terminals such as this computer, tablet computer, touch-control interaction screen, or is door, the vehicles, safety check instrument, entry and exit gate
Etc. be related to pass in and out permission equipment 9.
Compared with prior art, light-source structure 1 provided herein, optical projection mould group 7, sensing device 8 and equipment 9
Because the mutual arrangement position of the luminescence unit 12 of the different luminescence unit set 120 has correlation, the luminous list
Position of the member 12 on semiconductor base 10 can relatively easily realize accurate determination, reduce manufacture difficulty.
In the description of this specification, reference term " embodiment ", " certain embodiments ", " schematically implementation
What the description of mode ", " example ", " specific example " or " some examples " etc. meant to describe in conjunction with the embodiment or example
Particular features, structures, materials, or characteristics are contained at least one embodiment or example of the application.In this specification
In, schematic expression of the above terms are not necessarily referring to identical embodiment or example.Moreover, the specific spy of description
Sign, structure, material or feature can be combined in any suitable manner in any one or more embodiments or example.
The foregoing is merely the better embodiments of the application, all the application's not to limit the application
Made any modifications, equivalent replacements, and improvements etc., should be included within the scope of protection of this application within spirit and principle.
Claims (10)
1. a kind of light-source structure, which is characterized in that carry out three-dimensional sense survey, the light on light beam to a measured target object for emitting
Source structure includes semiconductor base and multiple luminescence units for being formed on the semiconductor base, and the luminescence unit is with two dimension
The formal distribution of dot matrix exists in the luminescence unit on the semiconductor base and refers to subregion, refers to subregion with this
Between related coefficient be greater than or equal to preset threshold luminescence unit subregion composed by set account for whole luminescence units
The product of the average value of ratio value related coefficient corresponding with the luminescence unit subregion each in set is greater than or equal to
0.25 and less than 1.
2. light-source structure as described in claim 1, it is characterised in that: the luminescence unit number for including with reference to subregion accounts for
The ratio of whole luminescence unit sums is greater than or equal to 10%；Or the reference subregion includes ten or more luminescence units.
3. light-source structure as described in claim 1, it is characterised in that: the sum of the whole luminescence unit is greater than or equal to
50。
4. light-source structure as described in claim 1, it is characterised in that: the related coefficient is normalizated correlation coefficient, described
Preset correlation coefficient threshold is 0.3.
5. light-source structure as described in claim 1, it is characterised in that: the product is more than or equal to 0.5 and less than 1.
6. light-source structure as described in claim 1, it is characterised in that: set composed by the luminescence unit subregion accounts for complete
The ratio value of portion's luminescence unit is that the luminescence unit number for including accounts for whole in set composed by the luminescence unit subregion
The ratio of luminescence unit total number；Or
The ratio value that set composed by the luminescence unit subregion accounts for whole luminescence units is the face of luminescence unit subregion
The sum of product accounts for the ratio of the entire light emitting region gross area.
7. a kind of optical projection mould group, which is characterized in that for projecting the patterned beam with predetermined pattern to measured target
Three-dimensional sense survey is carried out on object comprising light beam adjustment element, patterned optical element and any one of such as claim 1 to 6
The light-source structure, the light beam that the light beam adjustment element is used to issue light-source structure is adjusted so that it meets in advance
If propagation characteristic requirement, the patterned optical element is used for light field that light-source structure issues progress rearrangement to be formed
Patterned beam with predetermined pattern.
8. optical projection mould group as claimed in claim 7, which is characterized in that the optical projection mould group further includes driving electricity
Road, it is luminous to drive the luminescence unit to carry out that the driving circuit provides electric current.
9. a kind of sensing device, which is characterized in that for sensing the three-dimensional information of measured target object comprising sensing mould group and such as
Optical projection mould group described in any one of claim 7 or 8, the sensing mould group is for sensing the optical projection mould group
The predetermined pattern projected on measured target object and the image by analyzing the predetermined pattern obtain the three-dimensional of tested subject matter
Information.
10. a kind of equipment, which is characterized in that including sensing device as claimed in claim 9, the equipment is filled according to the sensing
The three-dimensional information of sensed measured target object is set to execute corresponding function.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821948507.XU CN209446959U (en) | 2018-11-24 | 2018-11-24 | A kind of light-source structure, optical projection mould group, sensing device and equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821948507.XU CN209446959U (en) | 2018-11-24 | 2018-11-24 | A kind of light-source structure, optical projection mould group, sensing device and equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN209446959U true CN209446959U (en) | 2019-09-27 |
Family
ID=68012771
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201821948507.XU Active CN209446959U (en) | 2018-11-24 | 2018-11-24 | A kind of light-source structure, optical projection mould group, sensing device and equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN209446959U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109471320A (en) * | 2018-11-24 | 2019-03-15 | 深圳阜时科技有限公司 | A kind of light-source structure, optical projection mould group, sensing device and equipment |
| CN109643051A (en) * | 2018-11-24 | 2019-04-16 | 深圳阜时科技有限公司 | A kind of light-source structure, optical projection mould group, sensing device and equipment |
-
2018
- 2018-11-24 CN CN201821948507.XU patent/CN209446959U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109471320A (en) * | 2018-11-24 | 2019-03-15 | 深圳阜时科技有限公司 | A kind of light-source structure, optical projection mould group, sensing device and equipment |
| CN109643051A (en) * | 2018-11-24 | 2019-04-16 | 深圳阜时科技有限公司 | A kind of light-source structure, optical projection mould group, sensing device and equipment |
| CN109643051B (en) * | 2018-11-24 | 2022-03-11 | 深圳阜时科技有限公司 | Light source structure, optical projection module, sensing device and equipment |
| CN109471320B (en) * | 2018-11-24 | 2024-04-30 | 深圳阜时科技有限公司 | Light source structure, optical projection module, sensing device and equipment |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109196525A (en) | Refuse the anti-spoofing sensing of false fingerprint pattern in optical sensor module under the screen for shielding upper fingerprint sensing | |
| CN109211135A (en) | A kind of sensing device, method for sensing and equipment | |
| CN109581795A (en) | A kind of optical projection mould group, sensing device and equipment | |
| CN209446959U (en) | A kind of light-source structure, optical projection mould group, sensing device and equipment | |
| CN209570792U (en) | A kind of light-source structure, optical projection mould group, sensing device and equipment | |
| CN209327767U (en) | A kind of light-source structure, optical projection mould group, sensing device and equipment | |
| CN209327766U (en) | A kind of light-source structure, optical projection mould group, sensing device and equipment | |
| CN109683439A (en) | Optical projection mould group, sensing device, equipment and optical projection module group assembling method | |
| CN209446961U (en) | A kind of light-source structure, optical projection mould group, sensing device and equipment | |
| CN209570793U (en) | A kind of light-source structure, optical projection mould group, sensing device and equipment | |
| CN109471321A (en) | A kind of light-source structure, optical projection mould group, sensing device and equipment | |
| CN109471320A (en) | A kind of light-source structure, optical projection mould group, sensing device and equipment | |
| CN209167159U (en) | A kind of sensing device and equipment | |
| CN209446958U (en) | A kind of functionalization mould group, sensing device and equipment | |
| CN109541876A (en) | A kind of light-source structure, optical projection mould group, sensing device and equipment | |
| CN109541875A (en) | A kind of light-source structure, optical projection mould group, sensing device and equipment | |
| CN109643052A (en) | A kind of light-source structure, optical projection mould group, sensing device and equipment | |
| CN109643051A (en) | A kind of light-source structure, optical projection mould group, sensing device and equipment | |
| CN110361870A (en) | A kind of optical module, transmitting unit, sensing mould group and electronic equipment | |
| CN209327768U (en) | A kind of light-source structure, optical projection mould group, sensing device and equipment | |
| CN209446960U (en) | A kind of light-source structure, optical projection mould group, sensing device and equipment | |
| CN209327764U (en) | A kind of light-source structure, optical projection mould group, sensing device and equipment | |
| CN209570790U (en) | A kind of beam modulation element, optical projection mould group, sensing device and equipment | |
| CN209570796U (en) | A kind of optical projection mould group, sensing device and equipment | |
| CN209690701U (en) | A kind of optical projection mould group, sensing device and equipment |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |