CN109471320B - Light source structure, optical projection module, sensing device and equipment - Google Patents
Light source structure, optical projection module, sensing device and equipment Download PDFInfo
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
- G03B21/00—Projectors or projection-type viewers; Accessories therefor
- G03B21/14—Details
- G03B21/20—Lamp housings
- G03B21/2006—Lamp housings characterised by the light source
- G03B21/2033—LED or laser light sources
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
- G03B21/00—Projectors or projection-type viewers; Accessories therefor
- G03B21/14—Details
- G03B21/20—Lamp housings
- G03B21/2006—Lamp housings characterised by the light source
- G03B21/2013—Plural light sources
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- Length Measuring Devices By Optical Means (AREA)
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
Abstract
The application is applicable to the technical fields of optics and electronics, and provides a light source structure which is used for emitting light beams to a detected object to perform three-dimensional sensing. The light source structure includes a semiconductor substrate and a plurality of light emitting units formed on the semiconductor substrate. The light emitting units are distributed on the semiconductor substrate in a two-dimensional lattice form. A reference sub-region is present in the light emitting unit. The product of the ratio value of the set formed by the luminous unit subareas with the correlation coefficient larger than or equal to the preset threshold value to all luminous units and the average value of the correlation coefficients corresponding to the luminous unit subareas in the set is larger than or equal to 0.25 and smaller than 1. The application also provides an optical projection module, a sensing device and equipment using the light source structure.
Description
Technical Field
The present application relates to optical technology, and more particularly, to a light source structure, an optical projection module, a sensing device and an apparatus.
Background
The existing three-dimensional (Three Dimensional, 3D) sensing module generally adopts a light source structure with irregularly distributed light emitting units to project a corresponding irregularly distributed light spot pattern for three-dimensional sensing. However, forming irregularly distributed light emitting units on a semiconductor substrate requires precise positioning of the light emitting units, and is difficult to manufacture. If the light emitting units are distributed and designed into regular pattern arrangement to reduce the manufacturing difficulty, the projected regular light spot patterns cannot realize three-dimensional sensing because the relative position relations are too similar, and if the irregularly distributed light spot patterns are projected by using the regularly distributed light emitting units, diffraction optical elements with complex structures are required to be specially customized to rearrange the regularly distributed light fields emitted by the light sources, but the diffraction optical elements with complex structures are expensive in manufacturing cost and are not beneficial to product popularization.
Disclosure of Invention
The application provides a light source structure, an optical projection module, a sensing device and equipment for realizing three-dimensional sensing.
The embodiment of the application provides a light source structure which is used for emitting light beams to a detected object to perform three-dimensional sensing. The light source structure includes a semiconductor substrate and a plurality of light emitting units formed on the semiconductor substrate. The light emitting units are distributed on the semiconductor substrate in a two-dimensional lattice form. A reference sub-region is present in the light emitting unit. The product of the ratio value of the set formed by the luminous unit subareas with the correlation coefficient larger than or equal to the preset threshold value to all luminous units and the average value of the correlation coefficients corresponding to the luminous unit subareas in the set is larger than or equal to 0.25 and smaller than 1.
In certain embodiments, the reference subregion comprises a proportion of the number of light emitting units to the total number of all light emitting units of greater than or equal to 10%; or the reference subregion comprises more than ten light emitting cells.
In certain embodiments, the total number of all light emitting units is greater than or equal to 50.
In some embodiments, the correlation coefficient is a normalized correlation coefficient, and the preset correlation coefficient threshold is 0.3.
In certain embodiments, the product is greater than or equal to 0.3 and less than 0.5.
In some embodiments, the proportion value of the set of the light-emitting unit subareas to all the light-emitting units is the proportion of the number of the light-emitting units included in the set of the light-emitting unit subareas to the total number of all the light-emitting units; or the proportion value of the set formed by the light-emitting unit subareas to all the light-emitting units is the proportion of the sum of the areas of the light-emitting unit subareas to the total area of the whole light-emitting area.
The embodiment of the application provides an optical projection module for projecting a patterned beam with a preset pattern onto a measured object for three-dimensional sensing, which comprises a beam adjusting element, a patterned optical element and a light source structure provided by any one of the above embodiments. The light beam adjusting element is used for adjusting the light beam emitted by the light source structure so as to enable the light beam to meet the preset propagation characteristic requirement. The patterning optical element is used for rearranging the light field emitted by the light source structure to form a patterning light beam with a preset pattern.
In some embodiments, the optical projection module further includes a driving circuit, and the driving circuit provides current to drive the light emitting unit to emit light.
The embodiment of the application provides a sensing device which is used for sensing three-dimensional information of a detected object. The optical projection module comprises the optical projection module and the sensing module, wherein the sensing module is used for sensing a preset pattern projected by the optical module on a detected object and acquiring three-dimensional information of the detected object by analyzing an image of the preset pattern.
The embodiment of the application provides equipment, which comprises the sensing device provided by the embodiment. The device executes corresponding functions according to the three-dimensional information of the detected object sensed by the sensing device.
According to the light source structure, the optical projection module, the sensing device and the equipment provided by the embodiment of the application, the arrangement positions of the light emitting units of different light emitting unit sets are related, so that the positions of the light emitting units on the semiconductor substrate can be easily and accurately determined, and the manufacturing difficulty is reduced.
Additional aspects and advantages of embodiments of the application will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of embodiments of the application.
Drawings
Fig. 1 is a schematic structural view of a light source structure according to a first embodiment of the present application.
Fig. 2 is a schematic diagram showing a distribution of light emitting units of the light source structure shown in fig. 1.
Fig. 3 is a schematic structural view of a light source structure according to a second embodiment of the present application.
Fig. 4 is a schematic structural view of a light source structure according to a third embodiment of the present application.
Fig. 5 is a schematic structural view of a light source structure according to a fourth embodiment of the present application.
Fig. 6 is a schematic diagram of calculating correlation coefficients between sets of light emitting units of non-uniform size.
Fig. 7 is a schematic structural view of a light source structure according to a fifth embodiment of the present application.
Fig. 8 is a schematic structural view of a light source structure according to a sixth embodiment of the present application.
Fig. 9 is a schematic structural diagram of an optical module according to a seventh embodiment of the present application.
Fig. 10 is a schematic structural diagram of a sensing device according to an eighth embodiment of the present application.
Fig. 11 is a schematic structural view of an apparatus according to a ninth embodiment of the present application.
Detailed Description
Embodiments of the present application are described in detail below, examples of which are illustrated in the accompanying drawings, wherein the same or similar reference numerals refer to the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the drawings are exemplary only for explaining the present application and are not to be construed as limiting the present application. In the description of the present application, it should be understood that the terms "first" and "second" are used for descriptive purposes only and are not to be interpreted as indicating or implying a relative importance or order of such features. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more of the described feature. In the description of the present application, the meaning of "a plurality" is two or more, unless explicitly defined otherwise.
In the description of the present application, it should be noted that, unless explicitly specified or limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically connected, electrically connected or communicated with each other; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements or interaction relationship between the two elements. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art according to the specific circumstances.
The following disclosure provides many different embodiments, or examples, for implementing different structures of the application. In order to simplify the present disclosure, only the components and arrangements of specific examples will be described below. They are, of course, merely examples and are not intended to limit the application. Furthermore, the present application may repeat use of reference numerals and/or letters in the various examples, and is intended to be simplified and clear illustration of the present application, without itself being indicative of the particular relationships between the various embodiments and/or configurations discussed. In addition, the various specific processes and materials provided in the following description of the present application are merely examples of implementation of the technical solutions of the present application, but those of ordinary skill in the art should recognize that the technical solutions of the present application may also be implemented by other processes and/or other materials not described below.
Further, the described features, structures, or characteristics may be combined in any suitable manner in one or more embodiments. In the following description, numerous specific details are provided to provide a thorough understanding of embodiments of the application. It will be appreciated, however, by one skilled in the art that the inventive aspects may be practiced without one or more of the specific details, or with other structures, components, etc. In other instances, well-known structures or operations are not shown or described in detail to avoid obscuring aspects of the application.
It should be understood that the embodiments and/or methods described herein are exemplary in nature and should not be construed as limiting the scope of the application. The embodiments or methods described herein are only one or more of numerous technical solutions covered by the technical ideas related to the present application, and thus, the steps of the described method technical solutions may be performed in the order indicated, may be performed in other orders, may be performed simultaneously, or may be omitted in some cases, and the above modifications should be regarded as the scope covered by the technical claims of the present application.
As shown in fig. 1, a first embodiment of the present application provides a light source structure 1 for emitting a light beam onto a target object to be measured for three-dimensional sensing. The light beam may be a light beam having a specific wavelength according to a sensing principle and an application scene. In this embodiment, the light beam is used to sense three-dimensional information of the measured object, and may be an infrared or near-infrared wavelength light beam with a wavelength range of 750 nanometers (Nanometer, nm) to 1650nm.
The light source structure 1 includes a semiconductor substrate 10, a plurality of light emitting units 12 formed on the semiconductor substrate 10, an anode 14, and a cathode 16. The light emitting unit 12 is a semiconductor structure capable of emitting light by electric excitation, and is formed on the semiconductor substrate 10 by photolithography, etching, metal organic chemical vapor deposition, or the like. For example, the light emitting unit 12 may be, but is not limited to, a vertical cavity Surface emitting laser (VERTICAL CAVITY Surface EMITTING LASER, VCSEL). The anode 14 and the cathode 16 are respectively disposed on two opposite end surfaces of the semiconductor substrate 10, so as to induce a current signal to excite the light emitting unit 12 to emit light. The excitation current is greater than 1mA.
It is understood that in other embodiments, the light emitting unit 12 may be a light emitting Diode (LIGHT EMITTING Diode, LED) or a Laser Diode (LD). Accordingly, the light emitting unit 12 is selected from any one of a VCSEL, an LED, and an LD, and a combination thereof.
Referring to fig. 1 and 2, the light emitting units 12 are distributed in a two-dimensional lattice in the light emitting region of the semiconductor substrate 10, wherein at least three adjacent light emitting units 12 are non-uniformly spaced on the semiconductor substrate 10. The entire light emitting units 12 have a correlation as a whole.
The evaluation of the correlation of the arrangement pattern composed of the plurality of light emitting units 12 is generally performed by calculating the correlation coefficient f n between the plurality of light emitting units 12, and if the calculated correlation coefficient f n is greater than or equal to a preset threshold value, the light emitting units 12 are considered to have correlation.
The calculation formula of the correlation coefficient f n may be, but is not limited to, a normalized correlation coefficient formula (Normalized Correlation Coefficient, NCC), which is as follows:
Wherein, The R 0 is a reference sub-area of the light emitting unit 12 arbitrarily selected from all the light emitting units 12 on the semiconductor substrate 10 according to a preset condition, the reference sub-area R 0 of the light emitting unit 12 is used to traverse other parts except the R 0 of the light emitting area of the whole semiconductor substrate 10, and the correlation coefficient f n between the reference sub-area R 0 of the light emitting unit 12 and the light emitting unit sub-area R n passed through in the traversal process is calculated. The said H is the height of the considered sub-region R n of the lighting unit 12 and W is the width of the considered sub-region R n of the lighting unit 12. The preset condition of the selected reference sub-region R 0 of the light-emitting unit 12 is that the ratio of the number of the light-emitting units 12 included in the selected reference sub-region of the light-emitting unit 12 to the total number of all the light-emitting units 12 is greater than or equal to 10% or that the selected reference sub-region of the light-emitting unit 12 includes more than ten light-emitting units 12. The total number of all light emitting units 12 is greater than or equal to 50.
It will be appreciated that the light emitting unit 12 reference sub-region R 0 is traversed in translation within a planar rectangular coordinate system. In order to exclude the influence of the background area other than the light emitting units 12 in the arrangement pattern on the normalized correlation coefficient when calculating the normalized correlation coefficient of the light emitting units 12, the area of the light emitting units 12 is expanded by taking the center of the light emitting units 12 as the origin before calculation, so as to avoid that the normalized correlation coefficient calculated by the formula cannot reflect the actual correlation between the light emitting units 12 due to the fact that the background area in the whole arrangement pattern has too large specific gravity when the physical size of the light emitting units 12 is small. For example, the light emitting unit 12 arrangement pattern with low correlation can also calculate a high normalized correlation coefficient. After the expansion of the area of the light emitting unit 12, the specific gravity of the background area is reduced, and the calculated normalized correlation coefficient of the arrangement pattern of the light emitting unit 12 can reflect the actual correlation between the light emitting units 12 to the maximum extent. The areas of each light emitting unit 12 are expanded in the same scale to the extent that the adjacent light emitting unit 12 areas do not overlap after expansion.
In addition, when the normalized correlation coefficient is calculated according to the above formula, only the coordinates corresponding to the region occupied by the light emitting unit 12 in the reference sub-region R 0 and the traversed light emitting unit sub-region R n of the light emitting unit 12 may be taken, instead of the coordinates corresponding to the background region. That is, R (i, j) =1 (i, j takes the corresponding coordinates in the area occupied by the light emitting unit) to exclude the influence of the background area on the actual correlation of the light emitting unit 12 when calculating the normalized correlation coefficient.
It will be appreciated that in other embodiments, the light emitting unit 12 reference sub-region R 0 may also be traversed in a polar coordinate system in a manner that rotates about the origin of coordinates.
The value range of the normalized correlation coefficient f n calculated according to the normalized correlation coefficient formula is more than or equal to 0 and less than or equal to n and less than or equal to 1. If f n =0, it is stated that the selected light emitting unit 12 in the reference sub-region R 0 is completely staggered from the light emitting unit 12 in the traversing light emitting unit 12 sub-region R n without any overlap, i.e. the light emitting unit 12 reference sub-region R 0 is completely uncorrelated with the light emitting unit 12 sub-region R n.
If f n =1 indicates that the selected lighting unit 12 is identical to the lighting unit 12 in the traversed lighting unit 12 sub-region R n, the lighting unit 12 reference sub-region R 0 is completely correlated with the lighting unit 12 sub-region R n.
If 0<f n <1 indicates that the light emitting unit 12 in the selected light emitting unit 12 reference sub-region R 0 is partially overlapped with the light emitting unit 12 in the traversed light emitting unit 12 sub-region R n, that is, the light emitting unit 12 reference sub-region R 0 is partially related to the light emitting unit 12 sub-region R n, the larger the normalized correlation coefficient f n is, the more the light emitting unit 12 in the selected light emitting unit 12 reference sub-region R 0 is overlapped with the light emitting unit 12 in the traversed light emitting unit 12 sub-region R n, that is, the correlation between the light emitting unit 12 reference sub-region R 0 and the light emitting unit 12 sub-region R n is higher.
If the normalized correlation coefficient f n is greater than or equal to 0.3, the light-emitting unit 12 reference sub-region R 0 is considered to be related to the light-emitting unit 12 sub-region R n, and the light-emitting units 12 have correlation. If the normalized correlation coefficient f n is greater than or equal to 0.5, the light-emitting unit 12 reference sub-region R 0 is considered to be highly correlated with the light-emitting unit 12 sub-region R n, and the light-emitting units 12 have a high correlation therebetween.
In this embodiment, the correlation coefficient is a normalized correlation coefficient f n, and the preset threshold is 0.3, that is, if the calculated normalized correlation coefficient f n that exists in the reference sub-region R 0 of the light emitting unit 12 is greater than or equal to 0.3 in the traversal process, or if the calculated peak value f n_max of the normalized correlation coefficient f n that exists in the reference sub-region R 0 of the light emitting unit 12 in the traversal process is greater than or equal to 0.3, it may be considered that there is a correlation between the light emitting units 12 as a whole.
Because of the correlation between the light emitting units 12, the position of the light emitting unit 12 on the semiconductor substrate 10 can be easily determined, and the manufacturing difficulty is reduced.
As shown in fig. 3, the second embodiment of the present application provides a light source structure 2 which is substantially the same as the light source structure 1 in the first embodiment, the main difference being that the correlation between the light emitting units 22 is evaluated while considering the proportion of the light emitting units 22 that are greater than or equal to a preset normalized correlation coefficient threshold value to all the light emitting units 22 in addition to the normalized correlation coefficient of the light emitting units 22.
Thereby, a correlation intensity function for evaluating the correlation intensity between the light emitting units 22 is definedWherein a is the proportion of the light-emitting units 22 with the correlation coefficient larger than or equal to the preset correlation coefficient threshold value to all the light-emitting units 22, and the calculation formula is/>P= { R 0,R1,…,RN }, where R 0 is a light emitting unit 22 reference sub-area selected according to a preset condition, traversing the entire light emitting area of the semiconductor substrate 20 with the light emitting unit 22 reference sub-area R 0 and calculating correlation coefficients of the light emitting unit 22 reference sub-area R 0 and other parts of the entire light emitting area of the semiconductor substrate 20 except R 0, and assuming that there are N light emitting unit 22 sub-areas with correlation coefficients with R 0 greater than or equal to a preset correlation coefficient threshold, respectively denoted as R 1,…,RN, the P represents a set { R 0,R1,…,RN } of all light emitting units 22 with correlation coefficients with the light emitting unit 22 reference sub-area R 0 greater than or equal to the preset correlation coefficient threshold within the light emitting area of the entire semiconductor substrate 20, where there is a correlation between the light emitting units 22 in the set p= { R 0,R1,…,RN }. The S is a set of all light emitting units on the entire semiconductor substrate 20. The ratio may be, but is not limited to, a ratio of the number of the related light emitting units 22 to the total number of all the light emitting units 22, or a ratio of the area of the related light emitting units 22 to the total surface of the whole light emitting area, which may be selected according to practical situations.
The P and S may be the number of light emitting units 22 within the corresponding set of light emitting units 12. If the light emitting units 22 are uniformly distributed, the P and S may be areas corresponding to the areas where the sets of light emitting units 22 are located. It will be appreciated that the calculations of P and S herein are only performed once for overlapping portions that may occur in R 0,R1,…,RN and are not repeated.
The saidFor the average value of the normalized correlation coefficient f n between all the light emitting unit 22 subregions R n (0 < n.ltoreq.N) and the light emitting unit 22 reference subregions R 0 in the set P= { R 0,R1,…,RN }, the calculation formula is/>Wherein f n is a normalized correlation coefficient between R n (0 < n.ltoreq.N) and R 0.
In the present embodiment, since the preset correlation coefficient threshold is 0.3, that is, when f n is equal to or greater than 0.3, it is considered that there is a correlation between the light emitting unit 12 in the corresponding light emitting unit 22 sub-region R n (0 < n.ltoreq.N) and the selected light emitting unit 22 reference sub-region R 0, the light emitting unit 22 sub-region R n (0 < n.ltoreq.N) can be applied to the correlation intensity function defined aboveTo evaluate the overall dependence of all light emitting cells 22 on the semiconductor substrate 10.
The a is the proportion of the related light-emitting units 22 to the whole light-emitting units 22, so that a is more than or equal to 0 and less than or equal to 1. The saidIs the average value of normalized correlation coefficient f n, so/>Thus, the correlation intensity function/>The calculated correlation intensity value F also meets the value range of 0-1. It is defined herein that if the correlation intensity value F satisfies 0.ltoreq.F < 0.1, all the light-emitting units 22 on the semiconductor substrate 10 are not correlated as a whole. If the correlation intensity value F satisfies 0.1.ltoreq.F < 0.25, all the light emitting cells 22 on the semiconductor substrate 20 are weakly correlated as a whole. If the correlation intensity value F satisfies 0.25.ltoreq.F < 0.5, all the light emitting units 22 on the semiconductor substrate 20 have correlation as a whole. If the correlation intensity value F satisfies 0.5.ltoreq.F.ltoreq.1, all the light emitting cells 22 on the semiconductor substrate 20 are strongly correlated as a whole.
It will be appreciated that, for the same light emitting unit 22 arrangement pattern on the semiconductor substrate 20, the calculated correlation intensity value F may vary with the difference of the reference sub-area R 0 of the light emitting unit 22 selected in the calculation process, and is not always consistent, so that the determination is performed according to the maximum value of the correlation intensity values F calculated by the reference sub-area R 0 of all the light emitting units 22 satisfying the preset condition when determining the correlation intensity of all the light emitting units 22 on the semiconductor substrate 20. That is, as long as there is a light-emitting unit 22 reference sub-region R 0 selected according to a preset condition so that the correlation intensity value F calculated from the light-emitting unit 22 reference sub-region R 0 satisfies the above-defined corresponding range of correlation intensities, the light-emitting unit 22 on the semiconductor substrate 20 as a whole can be considered to have a corresponding correlation intensity.
In the present embodiment, all the light emitting units 22 on the semiconductor substrate 20 have correlation as a whole. The maximum value F max of the correlation intensity values F of the entire light-emitting units 22 is greater than or equal to 0.25 and less than 1. I.e. there is a correlation intensity value F calculated by the reference sub-area R 0 of the light-emitting unit 22 selected according to the preset condition greater than or equal to 0.25 and less than 1.
It will be appreciated that in other embodiments, all of the light emitting cells 22 on the semiconductor substrate 20 have a strong correlation as a whole. The maximum value F max of the correlation intensity values F of the entire light-emitting units 22 is greater than or equal to 0.5 and less than 1. I.e. there is a correlation intensity value F calculated by the reference sub-area R 0 of the light-emitting unit 22 selected according to the preset condition greater than or equal to 0.5 and less than 1.
As shown in fig. 4, the third embodiment of the present application provides a light source structure 3 which is substantially the same as the light source structure 2 in the second embodiment, and is mainly different in that, when calculating the correlation coefficient f n between the selected light emitting unit 32 reference sub-region R 0 and the other part of the traversed light emitting region of the semiconductor substrate 30, it is considered that the normalized correlation coefficient f n between the light emitting unit 32 reference sub-region R 0 and the traversed light emitting unit 32 sub-region R n (0 < N) obtained after the transformation T is performed on the light emitting unit 32 change sub-region R' n (0 < N). The transformation T may be, but is not limited to, an affine transformation including translation, rotation, mirroring, etc. In the present embodiment, the transforms T are all referenced to a planar rectangular coordinate system.
That is, when the normalized correlation coefficient f n between the transformed sub-region R' n of the original sub-region R n (0 < n.ltoreq.N) of the light emitting unit 32 on the semiconductor substrate 30 and the selected reference sub-region R 0 of the light emitting unit 32 satisfies that f n is greater than or equal to 0.3, the number of light emitting units 32 and the corresponding normalized correlation coefficient f n of the sub-region R n (0 < n.ltoreq.N) of the light emitting unit 32 are applied to the correlation intensity function defined aboveTo evaluate the overall correlation of all light emitting cells 32 on the semiconductor substrate 30. In this embodiment, the expression of the normalized correlation coefficient f n is as follows:
Wherein R' n＝T(Rn, H is the height of the subregion R n of the light-emitting unit 32 under investigation (0 < n.ltoreq.N) and W is the width of the subregion R n of the light-emitting unit 32 under investigation (0 < n.ltoreq.N).
As shown in fig. 5, the fourth embodiment of the present application provides a light source structure 4, which is substantially the same as the light source structure 1 of the first embodiment, and is mainly different in that all the light emitting units 42 on the semiconductor substrate 40 can be divided into a plurality of light emitting unit sets 420, where a plurality refers to two or more. The set of light emitting units 420 have a correlation between them. There is no correlation between the light emitting units 42 inside at least one of the light emitting unit sets 420.
The correlation between the light-emitting unit sets 420 may be evaluated by calculating a normalized correlation coefficient f n between the light-emitting unit sets 420. The calculation formula is as above, and can be:
Wherein R 0 and R n are two sets of light-emitting units 420 that require calculation of a normalized correlation coefficient f n, H is the height of the set of light emitting units 420 under investigation and W is the width of the set of light emitting units 420 under investigation. The numerical range of the normalized correlation coefficient f n is more than or equal to 0 and less than or equal to f n and less than or equal to 1, and when f n is less than 0.3, no correlation exists among the light-emitting unit sets 420; when f n is more than or equal to 0.3, the light-emitting unit sets 420 are considered to have correlation; when f n is ≡ 0.5, the light-emitting unit sets 420 are considered to be highly correlated.
In the present embodiment, the number of the light emitting units 42 included in the light emitting unit set 420 is 10 or more, or the ratio of the number of the included light emitting units 42 to the total number of all the light emitting units 42 is 10 or more. The normalized correlation coefficient between the light-emitting unit sets 420 is 0.3.ltoreq.f n < 1.
It is understood that in other embodiments, the light emitting unit sets 420 may be highly correlated, and the normalized correlation coefficient between the light emitting unit sets 420 is 0.5+.f n < 1.
It will be appreciated that if the size of the areas of the divided light emitting unit sets 420 and 421 and/or the number of included light emitting units 42 are not uniform, as shown in fig. 6, it may be employed to expand the periphery of one of the light emitting unit sets 420 to form a large enough area 400 to accommodate one round of translation of the other light emitting unit set 421 around the periphery of the light emitting unit set 420. At this time, the light emitting unit set 421 is traversed in the extended area 400 as a reference sub-area according to the above formula of normalized correlation coefficient f n to calculate normalized correlation coefficient f n between the light emitting units 42 in the entire area 400 as normalized correlation coefficient f n between the light emitting unit set 420 and the light emitting unit set 421. It should be noted that, in the calculation process of the normalized correlation coefficient f n, the coordinate values of the extended area 400 except for the light emitting unit set 420 and the light emitting unit set 421 need to be set to 0, so as to eliminate the influence of the extended portion on the normalized correlation coefficient f n between the light emitting units 420 and the light emitting units 42 originally existing in the light emitting unit set 421.
It should be noted that, the correlation between the light emitting unit sets 420 may be the correlation between every two light emitting unit sets 420, or there may be at least a case where there are correlations between two light emitting unit sets 420, and not all the light emitting unit sets 420 are correlated with each other.
The correlation between the light emitting units 42 in the light emitting unit set 420 uses the correlation intensity function described in the first embodimentFor evaluation, please refer to the corresponding content in the first embodiment, and the detailed description is omitted herein. In the present embodiment, there is no correlation between the light emitting units 42 inside at least one of the light emitting unit sets 420, and the correlation intensity value F between all the light emitting units 42 inside the light emitting unit set 420 is equal to or less than 0.1.
As shown in fig. 7, the fifth embodiment of the present application provides a light source structure 5, which is substantially the same as the light source structure 4 in the fourth embodiment, and the main difference is that the light emitting unit set 520 includes a third type of light emitting unit set 521 and a fourth type of light emitting unit set 522. There is no correlation between the light units 52 within the third set 521 of light units. The light emitting units 52 in the third light emitting unit set 521 are all arranged according to the same first arrangement pattern. There is no correlation between the light units within the fourth set 522 of light units. The light emitting units 52 in the fourth light emitting unit set 522 are all arranged according to the same second arrangement pattern, and the second arrangement pattern is different from the first arrangement pattern. There is no correlation between the different classes of light-emitting cell sets 521 and 522. That is, the normalized correlation coefficient between the different classes of light-emitting unit sets 521 and 522 is less than 0.3.
In this embodiment, all the light emitting units 52 on the semiconductor substrate 50 may be divided into nine light emitting unit sets 520. The number of the third type of light emitting unit sets 521 is four, and the number of the fourth type of light emitting unit sets 522 is five. Each of the light emitting unit sets 520 includes at least ten of the light emitting units 52. It is understood that the positions of the third type of light emitting unit set 521 and the fourth type of light emitting unit set 522 may be any one of the grids in the matrix arrangement, as long as the requirements of the corresponding number and arrangement pattern are satisfied.
In other embodiments, the total number of the light emitting unit sets 520 is not limited to nine, and the arrangement manner is not limited to a nine-grid or matrix arrangement. So long as the condition of at least one of the third type of light emitting unit set 521 and at least one of the fourth type of light emitting unit set 522 is satisfied.
As shown in fig. 8, a sixth embodiment of the present application provides a light source structure 6, which is substantially the same as the light source structure 4 in the fourth embodiment, with the main difference that the light source structure 6 includes two light emitting unit sets 620. There is no correlation between the light units 62 within each light unit set 620. The two sets 620 of light emitting units have a correlation therebetween. That is, the normalized correlation coefficient between the two light emitting unit sets 620 is 0.3.ltoreq.f n.ltoreq.1, and the normalized correlation coefficient between the light emitting units 62 within each light emitting unit 620 is f n < 0.3. In this embodiment, each light emitting unit set 620 includes at least one hundred uncorrelated light emitting units 62.
As shown in fig. 9, a seventh embodiment of the present application provides an optical projection module 7 for projecting a patterned beam with a predetermined pattern onto a target object to be sensed. The optical projection module 7 includes a beam adjusting element 70, a patterning optical element 72, and the light source structure 1 in the first to sixth embodiments.
The beam adjusting element 70 includes, but is not limited to, a collimating element, a beam expanding element, a reflecting element, an optical microlens array set, and a grating. The beam adjusting element 70 is configured to adjust the beam emitted by the light source structure 1 so as to meet a preset propagation characteristic requirement, for example: propagation direction, collimation, beam aperture, etc. The patterned optical element 72 is configured to rearrange the light field emitted by the light source structure 1 to form a patterned beam capable of projecting a preset pattern on the measured object. The patterned optical element 72 includes, but is not limited to, one or more of a diffractive optical element (DIFFRACTIVE OPTICAL ELEMENT, DOE), an optical microlens array set, or a grating. In this embodiment, the diffractive optical element copies the light beam emitted from the light source structure 1 and spreads the light beam within a predetermined angle range to form a patterned light beam to be projected onto the measured object.
As shown in fig. 10, an eighth embodiment of the present application provides a sensing device 8 for sensing three-dimensional information of a measured object. The sensed spatial information of the measured object may be used to identify the measured object or to construct a three-dimensional model of the measured object.
The sensing device 8 includes the optical projection module 7 and the sensing module 80 according to the seventh embodiment. The optical projection module 7 is used for projecting a specific light beam onto the measured object. The sensing module 80 includes a lens 81, an image sensor 82, and an image analysis processor 83. The image sensor 82 senses an image formed on the object to be measured by the patterned beam through the lens 81. The image analysis processor 83 analyzes the sensed image projected on the object to be measured to acquire three-dimensional information of the object to be measured.
In this embodiment, the sensing device 8 is a three-dimensional face recognition device that senses three-dimensional information on the surface of the object to be detected and recognizes the identity of the object to be detected accordingly.
The sensing module 80 analyzes three-dimensional information of the surface of the measured object according to the shape change of the preset pattern projected on the measured object by the sensed patterned beam, and performs face recognition on the measured object according to the three-dimensional information.
As shown in fig. 11, a ninth embodiment of the present application provides a device 9, such as a mobile phone, a notebook computer, a tablet computer, a touch interactive screen, a door, a vehicle, a robot, an automatic numerical control machine, etc. The apparatus 9 comprises at least one sensing device 8 provided by the eighth embodiment described above. The device 9 is configured to correspondingly perform a corresponding function according to the sensing result of the sensing means 8. The corresponding functions include, but are not limited to, unlocking after identifying the identity of the user, paying, starting a preset application program, avoiding barriers, and judging any one or more of emotion and health conditions of the user by using a deep learning technology after identifying facial expressions of the user.
In this embodiment, the sensing device 8 is a three-dimensional face recognition device that senses three-dimensional information on the surface of the object to be detected and recognizes the identity of the object to be detected accordingly. The device 9 is an electronic terminal such as a mobile phone, a notebook computer, a tablet computer, a touch interactive screen and the like provided with the three-dimensional face recognition device, or is a device 9 related to access rights such as a door, a vehicle, a security inspection instrument, an access gate and the like.
Compared with the prior art, the light source structure 1, the optical projection module 7, the sensing device 8 and the equipment 9 provided by the application have correlation in arrangement positions of the light emitting units 12 of the different light emitting unit sets 120, so that the positions of the light emitting units 12 on the semiconductor substrate 10 can be easily and accurately determined, and the manufacturing difficulty is reduced.
In the description of the present specification, reference to the terms "one embodiment," "certain embodiments," "illustrative embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the application. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiments or examples. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
The foregoing description of the preferred embodiments of the application is not intended to limit the application to the particular forms disclosed, but on the contrary, the intention is to cover all modifications, equivalents, and alternatives falling within the spirit and scope of the application.
Claims (9)
1. A light source structure is used for emitting light beams to a tested object for three-dimensional sensing, the light source structure comprises a semiconductor substrate and a plurality of light emitting units formed on the semiconductor substrate, the light emitting units are distributed on the semiconductor substrate in a two-dimensional lattice form, reference subareas exist in the light emitting units, the ratio value of a set formed by the light emitting unit subareas with the correlation coefficient larger than or equal to a preset threshold value to all the light emitting units and the average value of the correlation coefficient corresponding to each light emitting unit subarea in the set is larger than or equal to 0.3 and smaller than 0.5, the correlation coefficient is used for evaluating the correlation between the distribution patterns formed by the light emitting units, and the correlation coefficient is as followsThe calculation formula of (c) may be a normalized correlation coefficient formula (Normalized Correlation Coefficient, NCC) as follows: /(I)Wherein, the method comprises the steps of, wherein,Said/>For a luminous unit reference subarea arbitrarily selected from all luminous units on a semiconductor substrate according to preset conditions, the luminous unit reference subarea/>Traversing the entire semiconductor substrate light emitting region except/>Other than and calculating the light-emitting unit reference subregion/>And the luminous unit subareas/>, which pass through in the traversal processCorrelation coefficient/>Said/>，H is the examined luminescent unit subregion/>W is the height of the considered light-emitting unit sub-region/>Is a width of (c).
2. A light source structure as recited in claim 1, wherein: the proportion of the number of the light-emitting units contained in the reference subarea to the total number of all the light-emitting units is more than or equal to 10%; or the reference subregion comprises more than ten light emitting cells.
3. A light source structure as recited in claim 1, wherein: the total number of all light emitting units is greater than or equal to 50.
4. A light source structure as recited in claim 1, wherein: the correlation coefficient is a normalized correlation coefficient, and the preset correlation coefficient threshold is 0.3.
5. A light source structure as recited in claim 1, wherein: the proportion value of the set formed by the light-emitting unit subareas to all the light-emitting units is the proportion of the number of the light-emitting units included in the set formed by the light-emitting unit subareas to the total number of all the light-emitting units; or alternatively
The proportion value of the set formed by the light-emitting unit subareas to all the light-emitting units is the proportion of the sum of the areas of the light-emitting unit subareas to the total area of the whole light-emitting area.
6. An optical projection module for projecting a patterned beam with a preset pattern onto a target object to be measured for three-dimensional sensing, comprising a beam adjusting element, a patterned optical element and the light source structure according to any one of claims 1 to 5, wherein the beam adjusting element is used for adjusting the beam emitted by the light source structure so as to meet the preset propagation characteristic requirement, and the patterned optical element is used for rearranging the light field emitted by the light source structure to form the patterned beam with the preset pattern.
7. The optical projection module of claim 6, further comprising a driving circuit that provides a current to drive the light emitting unit to emit light.
8. A sensing device for sensing three-dimensional information of a measured object, comprising a sensing module and the optical projection module according to any one of claims 6 or 7, wherein the sensing module is used for sensing a preset pattern projected by the optical module on the measured object and obtaining the three-dimensional information of the measured object by analyzing an image of the preset pattern.
9. An apparatus comprising the sensing device of claim 8, the apparatus performing a corresponding function based on three-dimensional information of a measured object sensed by the sensing device.
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