CN209419579U - High local oscillator degree of suppression broadband mixer - Google Patents
High local oscillator degree of suppression broadband mixer Download PDFInfo
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- CN209419579U CN209419579U CN201822081347.XU CN201822081347U CN209419579U CN 209419579 U CN209419579 U CN 209419579U CN 201822081347 U CN201822081347 U CN 201822081347U CN 209419579 U CN209419579 U CN 209419579U
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Abstract
The utility model relates to high local oscillator degree of suppression broadband mixers, are related to mixer, belong to the technical field of basic electronic circuit.The frequency mixer includes transconductance stage transistor, interstage transformer coupling network, switching stage and load stage, wherein, interstage transformer coupling network includes a double-input double-output transformer and two tuning capacitances, and primary and the secondary of transformer coil are separately connected the drain electrode of transconductance stage transistor and the source level of switching stage transistor and provide DC channel for them.The utility model relates to frequency mixer working band it is wide, it is high to local oscillator degree of suppression, and since transconductance amplifier is located at different DC channels from switching transistor, be conducive to obtain higher conversion gain and lower noise, this structure is especially suitable for use in the up-conversion mixer that it is more demanding to inhibit local oscillator.
Description
Technical field
The utility model relates to high local oscillator degree of suppression broadband mixers, are related to mixer, belong to basic electronic circuit
Technical field.
Background technique
In electrical communication system, frequency mixer be in transceiver be responsible for frequency spectrum shift function core circuit, microwave without
It has a wide range of applications in line communication system, radar system and measuring system.The technical indicator of frequency mixer mainly has: intermediate frequency/penetrate
Frequent band, conversion gain, noise coefficient, the linearity, interport isolation, port standing-wave ratio, power consumption etc..Traditional gilbert
Frequency mixer is lower to local oscillator degree of suppression, and local oscillation power is generally higher, thus can output end generate apparent local oscillator it is spuious at
Point, this influence to frequency mixer especially up-conversion mixer is very big, is mainly shown as: radio frequency output frequency in up-conversion mixer
Section is with local oscillator frequency point very close to being difficult to completely filter local oscillator ingredient using filter, eventually affect the frequency spectrum of output signal
Purity interferes other wave bands.
In order to inhibit frequency mixer local oscillator leakage, the prior art is generated and former leakage signal amplitude phase by additional calibration device
The opposite offseting signal of same-phase is corrected the direct current signal of input mixer to realize that local oscillator inhibits, increased signal
The processing devices such as branch and DAC had not only increased implementation complexity but also had made more complicated circuit structure, therefore, it is necessary to mixed from optimization
Itself circuit structure of frequency device, which sets out, seeks solution a kind of easy to accomplish and that local oscillator inhibitory effect is good.
It can be improved input port isolation in the drain electrode increase of gilbert mixer mutual conductance pipe and do not influence intermediate frequency letter
The ground capacity of number transmission is a kind of feasible program for optimizing frequency mixer itself circuit structure, but what the program filtered out is that feedthrough is arrived
The local oscillation signal of input terminal and the higher hamonic wave signal of local oscillator.
The application be intended to by improve gilbert mixer itself circuit structure with reach inhibit output end local oscillator leakage,
Improve the goal of the invention of output end isolation.
Utility model content
The goal of the invention of the utility model is the deficiency for above-mentioned background technique, and it is mixed to provide high local oscillator degree of suppression broadband
Frequency device increases the LC resonance network of the resonance at local frequency between transconductance stage and switching stage, reduces local oscillation signal negative
The leakage of load improves the bandwidth or gain of frequency mixer, solve existing frequency mixer local oscillator Restrain measurement be not easy to realize, circuit knot
The technical problem of structure complexity.
The utility model adopts the following technical scheme that for achieving the above object
High local oscillator degree of suppression broadband mixer, comprising:
Transconductance stage, Differential Input termination middle frequency difference divide input signal, and intermediate frequency differential input signal is converted to electric current letter
Number,
The interstage transformer coupling network of resonance at local frequency, primary side are constituted with switching tube drain electrode in transconductance stage
Port connection, the difference current for flowing through transconductance stage is coupled to secondary side,
Switching stage, Differential Input terminate local oscillator differential signal, and source electrode becomes between being total to the port connection grade that contact is constituted
The secondary side of depressor coupling network, the transistor for being included are controlled by local oscillator differential signal, transformer coupled net between output stage
The difference current of network coupling to load stage, and,
Load stage, one end are connect with switching stage difference output end, another termination DC power supply, by interstage transformer coupling
The difference current for closing network coupling is converted to difference radio-frequency signal.
Further, the interstage transformer coupling network of Gao Benzhen degree of suppression broadband mixer includes:
Transformer, the primary coil port constituted with transconductance stage drain electrode are connect, secondary coil and switching stage source electrode
The port connection that contact is constituted altogether, the midpoint of primary coil connect DC voltage, the neutral earthing of secondary coil,
Two tuning capacitances, the positive plate of each tuning capacitance and one end of transformer secondary coil connect, each tuning capacitance
Negative plate be grounded.
Further, Gao Benzhen degree of suppression broadband mixer further includes balun, and balun input terminates IF input signals,
The differential input end of the difference output termination transconductance stage of balun.
Further, it is radio frequency that Gao Benzhen degree of suppression broadband mixer, which further includes the difference current of change-over switch grade output,
The input terminal of the buffer stage of signal, switching stage difference output end and buffer stage connects, and the output end of buffer stage is the high local oscillator suppression
The RF output end of system broadband mixer.
Further, the transconductance stage of Gao Benzhen degree of suppression broadband mixer is made of the first metal-oxide-semiconductor and the second metal-oxide-semiconductor
The source electrode of mutual conductance pipe pair, the first metal-oxide-semiconductor and the second metal-oxide-semiconductor is all grounded, the first metal-oxide-semiconductor grid and the second metal-oxide-semiconductor grid constitute across
The differential input end of grade is led, the first metal-oxide-semiconductor drain electrode port constituted with the drain electrode of the second metal-oxide-semiconductor connects interstage transformer catenet
Network primary side.
Further, the switching stage of Gao Benzhen degree of suppression broadband mixer includes third metal-oxide-semiconductor and the 4th metal-oxide-semiconductor composition
Difference pipe pair and the 5th metal-oxide-semiconductor and the 6th metal-oxide-semiconductor composition difference pipe pair, the source electrode of third metal-oxide-semiconductor and the 4th metal-oxide-semiconductor is total
The source electrode of contact and the 5th metal-oxide-semiconductor and the 6th metal-oxide-semiconductor is total to the port and interstage transformer coupling network secondary side that contact is constituted
Connection, the grid that the grid of third metal-oxide-semiconductor and the 6th metal-oxide-semiconductor be total to contact and the 4th metal-oxide-semiconductor and the 5th metal-oxide-semiconductor, which is total to contact and constitutes, to be opened
Close the differential input end of grade, the drain electrode of the drain electrode of third metal-oxide-semiconductor and the 5th metal-oxide-semiconductor total contact and the 4th metal-oxide-semiconductor and the 6th metal-oxide-semiconductor
Contact constitutes the difference output end of switching stage altogether.
Further, in Gao Benzhen degree of suppression broadband mixer, the first metal-oxide-semiconductor, the second metal-oxide-semiconductor, third metal-oxide-semiconductor,
Four metal-oxide-semiconductors, the 5th metal-oxide-semiconductor, the 6th metal-oxide-semiconductor are bipolar junction transistor or heterojunction transistor or high electron mobility transistor.
The utility model by adopting the above technical scheme, has the advantages that
(1) the utility model is brilliant in transconductance stage transistor and switching stage on the basis of gilbert's double balanced mixer
Interstage transformer coupling network is added between body pipe, the addition of transformer is so that the impedance that switch tube source grade is looked to transconductance stage is in
Perception, forms parallel LC resonance network after parallel resonant capacitor is added, and the self-resonant frequency of this network is directed at local frequency, this
Signal loading of shaking realizes switching tube when on the connection LC resonance network as viewed from switch tube source grade in high resistant in local frequency
Source electrode effectively inhibits local oscillation signal in the leakage of output end to the exchange open circuit on ground, improves the inhibition to local oscillator to load
Degree, improves the isolation of mixer output mouth.
(2) DC channel of transconductance amplifier and switching transistor, such energy has been isolated in the insertion at transformer coupled network
It is enough to control the higher mutual conductance pipe of electric current and the lower switching tube of electric current respectively, improve the bandwidth or gain of frequency mixer.
Detailed description of the invention
Fig. 1 be the utility model relates to frequency mixer block diagram.
Fig. 2 is the physical circuit figure of the utility model embodiment 1.
Fig. 3 is the physical circuit figure of the utility model embodiment 2.
Fig. 4 is the physical circuit figure of the utility model embodiment 3.
Fig. 5 is the spectrogram of traditional gilbert's structure frequency mixer output.
Fig. 6 is the spectrogram of the output of frequency mixer shown in the utility model embodiment 3.
Figure label explanation: M1、M2、M3、M4、M5、M6For the first metal-oxide-semiconductor, the second metal-oxide-semiconductor, third metal-oxide-semiconductor, the 4th MOS
Pipe, the 5th metal-oxide-semiconductor, the 6th metal-oxide-semiconductor, CtuneFor tuning capacitance, L1、L2For the first inductance, the second inductance.
Specific embodiment
The technical solution of the utility model is described in detail with reference to the accompanying drawing, it should be understood that these embodiments are only used for
Illustrate the utility model rather than limitation the protection scope of the utility model, the application documents for having read the utility model it
Afterwards, those skilled in the art fall within defined by the claim of this application the modification of the various equivalent forms of the utility model
Range.
The utility model relates to high local oscillator degree of suppression broadband mixer as shown in Figure 1, in the double balanced mixings of gilbert
On the basis of device, interstage transformer coupling network is added between transconductance stage transistor and switching stage transistor.Intermediate frequency difference is defeated
Enter signal and be introduced into transconductance stage, enters switching stage from transconductance stage by interstage transformer coupling network, finally passed through from switching stage
Overload output.In terms of DC channel, the drain current of mutual conductance pipe is inputted from interstage transformer coupling network, by mutual conductance pipe source electrode
To ground；The drain current of switching tube is flowed by power supply through load, by interstage transformer coupling network to ground.
Have three examples by taking up-conversion as an example below to illustrate presently filed embodiment.
Embodiment 1: the utility model relates to frequency mixer as shown in Fig. 2, transconductance stage be the first metal-oxide-semiconductor M1With the 2nd MOS
Pipe M2The mutual conductance pipe pair constituted, it is LC network of the resonance in local frequency that interstage transformer, which couples network, and switching stage includes the
Three metal-oxide-semiconductor M3With the 4th metal-oxide-semiconductor M4A difference pipe pair and the 5th metal-oxide-semiconductor M for composition5With the 6th metal-oxide-semiconductor M6What is formed is another
A difference pipe pair is loaded by the first inductance L1, the second inductance L2Composition.First metal-oxide-semiconductor M1With the second metal-oxide-semiconductor M2Source electrode all connect
Ground, the first metal-oxide-semiconductor M1Grid and the second metal-oxide-semiconductor M2Grid constitutes the differential input end of transconductance stage, the first metal-oxide-semiconductor M1Drain electrode and the
Two metal-oxide-semiconductor M2Drain constituted port connects transformer, the both ends of transformer secondary coil respectively with the 3rd MOS
Pipe M3With the 4th metal-oxide-semiconductor M4Source electrode be total to contact, the 5th metal-oxide-semiconductor M5With the 6th metal-oxide-semiconductor M6Source electrode be total to contact be connected, primary line
The midpoint of circle meets DC voltage VDD1, the neutral earthing of secondary coil, two tuning capacitance CtunePositive plate and transformer secondary output
One end of coil connects, each tuning capacitance CtuneNegative plate be grounded, third metal-oxide-semiconductor M3Grid, the 6th metal-oxide-semiconductor M6Grid with
4th metal-oxide-semiconductor M4With the 5th metal-oxide-semiconductor M5Grid be total to contact constitute switching stage differential input end, third metal-oxide-semiconductor M3Drain electrode and the
Four metal-oxide-semiconductor M4Drain electrode constitutes a difference output end of switching stage, the 5th metal-oxide-semiconductor M4Drain electrode and the 6th metal-oxide-semiconductor M6Drain electrode is constituted and is opened
Close another difference output end of grade, third metal-oxide-semiconductor M3Drain electrode and the 5th metal-oxide-semiconductor M5Drain electrode meet the first inductance L1One
End, the 4th metal-oxide-semiconductor M4Drain electrode and the 6th metal-oxide-semiconductor M6Drain electrode meet the second inductance L2One end, the first inductance L1The other end
With the second inductance L2The other end meet DC power supply VDD2, third metal-oxide-semiconductor M3With the 5th metal-oxide-semiconductor M5Drain electrode be total to contact and
Four metal-oxide-semiconductor M4With the 6th metal-oxide-semiconductor M6Drain electrode contact constitutes the differential radio frequency output port of the frequency mixer altogether.Intermediate frequency Differential Input
Signal+v IFWith-v IFRespectively from the first metal-oxide-semiconductor M1Grid and the second metal-oxide-semiconductor M2Grid enter transconductance stage, transconductance stage is by intermediate frequency
Differential input signal is converted to current signal, and the interstage transformer coupling network of resonance will flow through transconductance stage at local frequency
Difference current is coupled to secondary side, third metal-oxide-semiconductor M3With the 6th metal-oxide-semiconductor M6Grid be connected and connect local oscillator input+v LO, the 4th
Metal-oxide-semiconductor M4With the 5th metal-oxide-semiconductor M5Grid be connected and connect local oscillator input-v LO, transformer coupled network between switching stage output stage
The difference current of coupling is loaded with the difference that the load stage of DC power supply VDD2 couples interstage transformer coupling network to load stage
Point electric current be converted to difference radio-frequency signal+v RF、-v RF.Load stage can be also made of the resistance-inductance network of resistance or series/parallel.
Embodiment 2: as shown in figure 3, on the basis of embodiment 1, IF input signalsv IFFirst pass through a balun, balun
Difference output end be connected respectively to the first metal-oxide-semiconductor M1With the second metal-oxide-semiconductor M2Grid.The other parts and implementation of the present embodiment
Example 1 is identical.
Embodiment 3: as shown in figure 4, on the basis of embodiment 1, differential radio frequency output signal passes through an output buffering
Grade, using the output of buffer stage as the output of entire frequency mixerv RF.Assuming that the frequency of IF input signals is 2.5 GHz, power
For -30 dBm, local frequency is 8 GHz, and power is 0 dBm, then the frequency point of radio frequency output is in 10.5 GHz, traditional gilbert
The frequency spectrum of frequency mixer output is as shown in figure 5, radio frequency power output is -28.9 dBm, that is, conversion gain 1.1dB, local-oscillator leakage
For -32.8dBm, intensity is not much different compared with desired signal；Same situation, the frequency spectrum of the output of frequency mixer shown in embodiment 3
As shown in fig. 6, radio frequency power output is -27.8 dBm, that is, conversion gain 2.2dB, local-oscillator leakage are -52.4dBm, are being believed
While number gain is slightly promoted, nearly 20 dB are greatly improved in local oscillator degree of suppression, can be spuious by local oscillator by further filtering
It is reduced to acceptable magnitude.The other parts of the present embodiment are same as Example 1.
Claims (7)
1. high local oscillator degree of suppression broadband mixer characterized by comprising
Transconductance stage, Differential Input termination middle frequency difference divide input signal, intermediate frequency differential input signal are converted to current signal,
The constituted end of switching tube drain electrode in the interstage transformer coupling network of resonance at local frequency, primary side and transconductance stage
Mouth connection, is coupled to secondary side for the difference current for flowing through transconductance stage,
Switching stage, Differential Input terminate local oscillator differential signal, and source electrode is total to the port connection interstage transformer that contact is constituted
The secondary side of coupling network, between output stage the difference current of transformer coupled network coupling to load stage, and,
Load stage, one end are connect with switching stage difference output end, another termination DC power supply, by interstage transformer catenet
The difference current of network coupling is converted to difference radio-frequency signal.
2. high local oscillator degree of suppression broadband mixer according to claim 1, which is characterized in that the interstage transformer catenet
Network includes:
Transformer, the primary coil port constituted with switching tube drain electrode in transconductance stage are connect, secondary coil and switching stage
Source electrode is total to the port connection that contact constituted, and the midpoint of primary coil connects DC voltage, the neutral earthing of secondary coil,
Two tuning capacitances, the positive plate of each tuning capacitance and one end of transformer secondary coil connect, and each tuning capacitance is born
Pole plate is grounded.
3. high local oscillator degree of suppression broadband mixer according to claim 1 or claim 2, which is characterized in that the high local oscillator degree of suppression is wide
Band frequency mixer further includes balun, and the difference of balun input termination IF input signals, the difference output termination transconductance stage of balun is defeated
Enter end.
4. high local oscillator degree of suppression broadband mixer according to claim 1 or claim 2, which is characterized in that the high local oscillator degree of suppression is wide
It is the buffer stage of radiofrequency signal with the difference current that frequency mixer further includes the output of change-over switch grade, switching stage difference output end and slow
The input terminal connection of grade is rushed, the output end of buffer stage is the RF output end of the high local oscillator degree of suppression broadband mixer.
5. high local oscillator degree of suppression broadband mixer according to claim 1, which is characterized in that the transconductance stage is the first MOS
The source electrode of the mutual conductance pipe pair that pipe and the second metal-oxide-semiconductor are constituted, first metal-oxide-semiconductor and the second metal-oxide-semiconductor is all grounded, the first metal-oxide-semiconductor
Grid and the second metal-oxide-semiconductor grid constitute the differential input end of transconductance stage, and the drain electrode of the first metal-oxide-semiconductor and the drain electrode of the second metal-oxide-semiconductor are constituted
Port connect interstage transformer coupling network primary side.
6. high local oscillator degree of suppression broadband mixer according to claim 5, which is characterized in that the switching stage includes third
The difference pipe pair and the 5th metal-oxide-semiconductor of metal-oxide-semiconductor and the 4th metal-oxide-semiconductor composition and the difference pipe pair of the 6th metal-oxide-semiconductor composition, the 3rd MOS
The source electrode of pipe and the 4th metal-oxide-semiconductor is total to contact and the 5th metal-oxide-semiconductor and the source electrode of the 6th metal-oxide-semiconductor is total between the contact port constituted and grade
Transformer coupled network secondary side connection, the grid of the 6th metal-oxide-semiconductor of third metal-oxide-semiconductor are total to contact and the 4th metal-oxide-semiconductor and the 5th metal-oxide-semiconductor
Grid be total to the differential input end that contact constitutes switching stage, the drain electrode of third metal-oxide-semiconductor and the 5th metal-oxide-semiconductor is total to contact and the 4th MOS
The total contact of the drain electrode of pipe and the 6th metal-oxide-semiconductor constitutes the difference output end of switching stage.
7. high local oscillator degree of suppression broadband mixer according to claim 6, which is characterized in that first metal-oxide-semiconductor, second
Metal-oxide-semiconductor, third metal-oxide-semiconductor, the 4th metal-oxide-semiconductor, the 5th metal-oxide-semiconductor, the 6th metal-oxide-semiconductor are bipolar junction transistor or heterojunction transistor or height
Electron mobility transistor.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201822081347.XU CN209419579U (en) | 2018-12-12 | 2018-12-12 | High local oscillator degree of suppression broadband mixer |
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| CN201822081347.XU CN209419579U (en) | 2018-12-12 | 2018-12-12 | High local oscillator degree of suppression broadband mixer |
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| CN209419579U true CN209419579U (en) | 2019-09-20 |
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| CN201822081347.XU Expired - Fee Related CN209419579U (en) | 2018-12-12 | 2018-12-12 | High local oscillator degree of suppression broadband mixer |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114095094A (en) * | 2021-11-05 | 2022-02-25 | 天津大学 | High local oscillator radio frequency port isolation fundamental up-conversion mixer with working frequency band above 200GHz |
-
2018
- 2018-12-12 CN CN201822081347.XU patent/CN209419579U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114095094A (en) * | 2021-11-05 | 2022-02-25 | 天津大学 | High local oscillator radio frequency port isolation fundamental up-conversion mixer with working frequency band above 200GHz |
| CN114095094B (en) * | 2021-11-05 | 2023-09-19 | 天津大学 | High local oscillator radio frequency port isolation fundamental wave up-conversion mixer with working frequency band above 200GHz |
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Granted publication date: 20190920 Termination date: 20191212 |
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| CF01 | Termination of patent right due to non-payment of annual fee |