CN209401654U - A kind of plane perovskite solar battery - Google Patents

A kind of plane perovskite solar battery Download PDF

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CN209401654U
CN209401654U CN201821474263.6U CN201821474263U CN209401654U CN 209401654 U CN209401654 U CN 209401654U CN 201821474263 U CN201821474263 U CN 201821474263U CN 209401654 U CN209401654 U CN 209401654U
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layer
solar battery
perovskite
perovskite solar
light
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方国家
陈志亮
马俊杰
朱自强
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Shenzhen Research Institute of Wuhan University
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Shenzhen Research Institute of Wuhan University
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Abstract

The utility model relates to a kind of plane perovskite solar batteries, including antireflection layer, transparent conductive substrate, hole transmission layer, perovskite light-absorption layer, electron transfer layer and the metal electrode stacked gradually.The utility model is by introducing one layer of porous Al at the transparent conductive substrate back side of inverted structure perovskite solar battery2O3Sunlight antireflection layer, reduce reflection of the transparent conductive substrate to sunlight, absorption of the perovskite light-absorption layer to light is increased, the short-circuit current density of perovskite solar battery is improved, the efficiency of perovskite solar battery is finally made to have further raising.

Description

A kind of plane perovskite solar battery
Technical field
The utility model relates to a kind of plane perovskite solar batteries, belong to photoelectron material and devices field.
Background technique
In recent years, energy crisis becomes more and more urgent, and the research of clean energy resource becomes more more and more urgent.Clean energy resource packet Include solar energy, wind energy, water power energy etc..Solar energy is due to inexhaustible, and photovoltaic cell can directly turn solar energy Electric energy is turned to have great application prospect.Current solar battery is developed to more mature now by silicon solar cell Organic solar batteries, dye-sensitized solar cells and copper and indium gallium tin solar battery etc..But these current batteries are being applied There is also many problems such as at high cost, stability is poor for aspect, so the development and utilization of solar energy is also in the starting stage, it is related The research of solar battery is also very urgent, has put into many research energy both at home and abroad, has been desirable in area of solar cell energy Obtain huge breakthrough.
The perovskite battery of latest find is quickly grown in recent years, due to very high incident photon-to-electron conversion efficiency, at home Unprecedented huge research boom is caused outside, and has been achieved for many research achievements.Perovskite light absorbent has height Carrier mobility, band gap is adjustable, solwution method preparation and high absorption coefficient, so perovskite battery can obtain it is high Short circuit battery, open-circuit voltage and fill factor.Highest perovskite battery efficiency record is by the domestic Chinese Academy of Sciences half at present The trip of conductor research institute is kept through green, achieves 23.3% surprising efficiency in U.S.'s renewable energy laboratory certification (https://www.nrel.gov/pv/assets/images/efficiency-chart-20180716.jpg)。
For the perovskite solar battery of inverted structure (p-i-n), since it possesses higher open-circuit voltage and filling The factor, substantially without sluggishness the advantages that, the concern by vast perovskite researcher.However, being limited by inverted structure battery itself Limitation, to obtain high efficiency, perovskite light-absorption layer should not be too thick.Absorption of the relatively thin perovskite light-absorption layer for sunlight Deficiency, so that the short circuit current of the perovskite solar battery of inverted structure is relative to just setting structure perovskite solar battery It is low.In order to have breakthrough in the efficiency of inverted structure perovskite solar battery, we must want to do from the structure of battery Method increases the short-circuit current density of inverted structure battery.It is generally employed for the electrically conducting transparent of perovskite solar battery at present Substrate FTO, ITO etc., light transmission rate be not generally it is very high, the sunlight being irradiated on perovskite solar battery active area has A part is reflected by conductive substrates, and it is few to eventually enter into the absorbed part of perovskite light-absorption layer, limits perovskite solar energy The photoelectric current of battery.In order to reduce reflection of the transparent conductive substrate to sunlight, increases the light absorption of perovskite light-absorption layer, improve The short-circuit current density of perovskite solar battery, particularly the solar battery of inverted structure, the application are being inverted knot for the first time The transparent conductive substrate back side of structure perovskite solar battery introduces one layer of Al2O3Porous sunlight antireflection layer reduces conductive liner Reflection of the bottom to sunlight, increases the light absorption of perovskite light-absorption layer, to improve the short circuit electricity of inverted structure solar battery Stream, further increases the efficiency of perovskite solar battery.This has great importance to the development of perovskite solar battery.
Utility model content
The utility model problem not high for inverted structure perovskite solar battery current density provides a kind of flat Face perovskite solar battery, the plane perovskite solar battery can reduce reflection of the conductive substrates to sunlight, increase The light absorption of perovskite light-absorption layer promotes the short-circuit current density of perovskite solar battery.
Technical solution provided by the utility model is specific as follows:
A kind of plane perovskite solar battery, including stack gradually antireflection layer, transparent conductive substrate, hole transport Layer, perovskite light-absorption layer, electron transfer layer and metal electrode.
The antireflection layer is one layer of Al that magnetically controlled sputter method is plated in the transparent conductive substrate back side2O3And then pass through water-bath The porous antireflection layer of the sunlight that method is prepared.
The transparent conductive substrate is FTO transparent conducting glass substrate.
The hole transmission layer is the nickel oxide hole transmission layer of lithium doping.
The perovskite light-absorption layer is CH3NH3PbI3Light-absorption layer.
The electron transfer layer is PCBM and BCP laminated film.
The metal electrode is silver electrode.
The preparation method of above-mentioned plane perovskite solar battery, includes the following steps:
(1) first transparent conductive substrate is cleaned using semiconductor technology, with being dried with nitrogen；
(2) one layer of Al is sputtered in the reverse side of transparent conductive substrate (non-conductive face)2O3And then passes through water bath Method and prepare At porous antireflection layer；
(3) the nickel oxide precursor liquid of lithium doping is prepared in the front of transparent conductive substrate (conducting surface) spraying, is made annealing treatment Obtain hole transmission layer；(4) by CH3NH3PbI3Perovskite light-absorption layer covers on the hole transport layer；(5) spin-coating method is used Electron transfer layer solution is spun on formation composite electron transport layer on light-absorption layer；(6) again in electron-transport upper evaporation layer by layer Prepare metal Ag electrode.
The Al2O3The preparation method of porous sunlight antireflection layer, includes the following steps:
(1) conductive substrates cleaned up are placed in magnetic control sputtering device, target is Al target, Ar:O2=10:4 sputters function Rate sputters 30min；
(2) deionized water is added toward beaker, the sample sputtered is placed in a beaker, is heated to 95 DEG C, water-bath 10 minutes Afterwards with being dried with nitrogen.
The preparation method of the nickel oxide hole transmission layer of the lithium doping, using include the following steps method be made:
(1) precursor solution of oxide is prepared first: the second of 19mL is sequentially added in 307.2mg nickel acetylacetonate The dehydrated alcohol of nitrile and 1mL, ultrasound obtains the acetonitrile and second for the nickel acetylacetonate that solution concentration is 0.06M for 10 minutes after shaking up Alcoholic solution (solution concentration 0.06M)；By in the acetonitrile of the Li-TFSI of the 23mg 2mL being dissolved in, lithium salt solution is stirred to get； It takes 26 microlitres of lithium salt solution to be added in the acetonitrile and ethanol solution of nickel acetylacetonate above, shakes up and ultrasound obtains for 3 minutes The precursor solution of nickel oxide.
(2) precursor solution of prepared oxide is pressed into four period even applications using spray pyrolysis coating machine In the transparent conductive substrate that temperature is 450 degrees Celsius, anneal 60 minutes after having sprayed at 450 degrees Celsius, to obtain one layer Fine and close nickel oxide hole transmission layer.
The perovskite CH3NH3PbI3The preparation method of light-absorption layer, step (4) include the following steps:
(1) CH for being 1:1 by molar ratio3NH3I and PbI2It is dissolved in dimethylformamide (DMF) together and dimethyl is sub- In the mixed solution of sulfone (DMSO), a few hours are stirred under 60 degrees Celsius, obtain perovskite precursor solution；Wherein DMF and DMSO Volume ratio be 4:1.
(2) above-mentioned prepared perovskite precursor solution liquid oxide hole is equably spin-coated on sol evenning machine to pass On defeated layer.Chlorobenzene is added dropwise in spin coating process, anneals, obtains perovskite light-absorption layer.
The preparation method of the electron transfer layer includes the following steps:
(1) PCBM of 20mg/ml is dissolved into chlorobenzene, stirring is spare, and it is molten that the BCP of 0.5mg/ml is dissolved into ethyl alcohol It is stirred in liquid spare.
(2) one layer PCBM layers of the uniform spin coating on perovskite light absorbing layer, then one layer BCP layers of spin coating on PCBM layer.
The utility model at the transparent conductive substrate back side of inverted structure perovskite solar battery by introducing more than one layer Hole Al2O3Sunlight antireflection layer reduces reflection of the transparent conductive substrate to sunlight, increases perovskite light-absorption layer to light Absorption, improve the short-circuit current density of perovskite solar battery, there is the efficiency of perovskite solar battery Further raising.Be conducive to the application and popularization of technology.
The utility model has the following advantages and beneficial effects:
1) inverted structure perovskite solar battery open pressure and fill factor is larger, and without sluggishness when testing, Battery efficiency high reliablity；
2) porous Al2O3Sunlight antireflection layer can effectively reduce reflection of the transparent conductive substrate to sunlight, can increase Absorption of the perovskite light-absorption layer to sunlight increases the short circuit current and photoelectric conversion effect of inverted structure perovskite solar battery Rate.
Detailed description of the invention
Fig. 1 is the device architecture schematic diagram of the utility model perovskite solar battery.
Fig. 2 is antireflection layer stereoscan photograph.
Fig. 3 is the light transmission map of transparent conductive substrate in embodiment 1.
Fig. 4 is deposited porous Al in embodiment 22O3The light transmission map of transparent conductive substrate after sunlight antireflection layer.
Fig. 5 is the current density voltage curve figure that perovskite solar battery is made in embodiment 3.
Fig. 6 is the current density voltage curve figure that perovskite solar battery is made in embodiment 4.
Specific embodiment
Referring to Fig. 1, the utility model include the antireflection layer 1 stacked gradually, transparent conductive substrate 2, hole transmission layer 3, Perovskite light-absorption layer 4, electron transfer layer 5,6 and metal electrode 7.
The antireflection layer is one layer of Al that magnetically controlled sputter method is plated in the transparent conductive substrate back side2O3And then pass through water-bath The porous antireflection layer of the sunlight that method is prepared.
The transparent conductive substrate is FTO transparent conducting glass substrate.
The hole transmission layer is the nickel oxide hole transmission layer of lithium doping.
The perovskite light-absorption layer is CH3NH3PbI3Light-absorption layer.
The electron transfer layer is the laminated film that PCBM layer 6 and BCP layer 7 form.
The metal electrode is silver electrode.
Embodiment 1:
1) it cleans.First FTO Conducting Glass is cleaned, be dried up in test.The suitable FTO of size is led Electric glass is first cleaned up with detergent, then is rinsed with deionized water.Then successively clear with deionized water, acetone, EtOH Sonicate It washes, it is finally spare with being dried with nitrogen again.
2) sample cleaned up is placed in ultraviolet-visible light protractor test light transmission rate, back end is air, test knot Fruit is as shown in Figure 3.
Embodiment 2:
1) it cleans.With embodiment 1.
2) prepared by sunlight antireflection layer.The conductive substrates cleaned up are placed in magnetic control sputtering device, target is Al target, Ar:O2=10:4, sputtering power 100W sputter 30min.Deionized water is added toward beaker, the substrate sputtered is placed in beaker In, it is heated to 95 DEG C, boiling is after ten minutes with being dried with nitrogen.Obtained sunlight antireflection layer stereoscan photograph such as Fig. 2 institute Show.
3) light transmission rate is tested.With embodiment 1, it is as shown in Figure 4 to obtain light transmission rate.
Embodiment 3:
1) it cleans.With embodiment 1.
2) prepared by hole transmission layer.The acetonitrile of 19mL and the anhydrous second of 1mL are sequentially added in 307.2mg nickel acetylacetonate Alcohol, ultrasound obtains the acetonitrile and ethanol solution (solution concentration 0.06M) of nickel acetylacetonate for 10 minutes after shaking up；By 23mg's Li-TFSI is dissolved in the acetonitrile of 2mL, stirs to get lithium salt solution；26 microlitres of lithium salt solution is taken to be added to levulinic above In the acetonitrile and ethanol solution of ketone nickel, shakes up and ultrasound obtains the precursor solution of nickel oxide in 3 minutes.Use spray pyrolysis plated film Machine is served as a contrast the precursor solution of prepared oxide by four period even applications in the electrically conducting transparent that temperature is 450 degrees Celsius On bottom, anneal 60 minutes after having sprayed at 450 degrees Celsius, to obtain one layer of fine and close nickel oxide hole transmission layer.
3) preparation of perovskite light-absorption layer.The CH for being 1:1 by molar ratio3NH3I and PbI2It is dissolved in dimethyl formyl together In the mixed solution of amine (DMF) and dimethyl sulfoxide (DMSO), a few hours are stirred under 60 degrees Celsius, it is molten to obtain perovskite presoma Liquid；Wherein the volume ratio of DMF and DMSO is 4:1.Configured perovskite precursor solution is equably spin-coated on by moving back again On the oxide hole transmission layer of fire.Spincoating conditions are as follows: low speed 500rpm spin coating 5s, then high speed 4000rpm spin coating 30s, and 300 μ L ethyl acetate anti-solvents are added dropwise in high speed spin coating after starting, first anneal 2 minutes, be under 100 degrees Celsius at 60 degrees Celsius Annealing 10 minutes, obtains perovskite absorbed layer.
4) prepared by electron transfer layer.By fullerene derivate 3'- phenyl -3'H- cyclopropyl [1,9] [5,6] fowler of 20mg Alkene-C60-Ih-3'- methyl butyrate (PCBM) is dissolved into 1ml chlorobenzene, stirring and dissolving, by the dibromo o-cresol sulphur furan phthalein of 0.5mg (BCP) it is dissolved into stirring and dissolving in 1ml ethanol solution.One layer PCBM layers of uniform spin coating, takes the photograph 80 on perovskite light absorbing layer It anneals 10 minutes under family name's degree.Then one layer BCP layers of spin coating on PCBM layer are annealed 2 minutes at 80 degrees celsius.
5) prepared by electrode.The sample of the good hole transmission layer of spin coating is placed in vacuum evaporation apparatus and is steamed by thermal evaporation process One layer of Ag films electrode is sent out, plane perovskite solar battery is finally obtained.
6) it tests.In AM1.5, effective area of active layer is 0.09 cm2Under conditions of battery is tested.Its J-V is bent Line is as shown in Figure 5.The photoelectric conversion efficiency parameter of acquisition is open-circuit voltage 1.115V, 19.811 mA/ of short-circuit current density cm2, fill factor 0.696, transfer efficiency 15.385%.
Embodiment 4:
1) it cleans.With embodiment 1.
2) prepared by sunlight antireflection layer.With embodiment 2.
3) prepared by hole transmission layer.With embodiment 3.
4) prepared by perovskite light-absorption layer.With embodiment 3.
5) prepared by electron transfer layer.With embodiment 3.
6) prepared by electrode.With embodiment 3.
7) it tests, with embodiment 3.Its J-V curve is as shown in Figure 6.The photoelectric conversion efficiency parameter of acquisition is open-circuit voltage 1.125V, 21.811 mA/cm of short-circuit current density2, fill factor 0.688, transfer efficiency 16.886%.
The perovskite solar battery of inverted structure is used in the utility model, and uses porous Al2O3Sunlight antireflective Layer increases the sun light absorption of perovskite light-absorption layer, considerably increases the photoelectric current of perovskite solar battery.Porous structure Al2O3It can effectively reduce reflection of the conductive substrates to sunlight, increase through substrate, into the sunlight of perovskite light-absorption layer, Increase the light absorption of calcium titanium ore bed.The photoelectric conversion efficiency that perovskite solar battery based on such structure obtains is compared to biography Perovskite solar battery of uniting is higher, has commercialized potential.

Claims (3)

1. a kind of plane perovskite solar battery, which is characterized in that including antireflection layer, the electrically conducting transparent lining stacked gradually Bottom, hole transmission layer, perovskite light-absorption layer, electron transfer layer and metal electrode；The antireflection layer is to use magnetron sputtering side Method is plated in one layer of Al at the transparent conductive substrate back side2O3And then the porous antireflective of sunlight being prepared by water bath Method Layer；The hole transmission layer is the nickel oxide hole transmission layer of lithium doping；The perovskite light-absorption layer is CH3NH3PbI3Extinction Layer；The electron transfer layer is PCBM and BCP laminated film.
2. plane perovskite solar battery according to claim 1, which is characterized in that the transparent conductive substrate is FTO transparent conducting glass substrate.
3. plane perovskite solar battery according to claim 1, which is characterized in that the metal electrode is silver electricity Pole.
CN201821474263.6U 2018-09-10 2018-09-10 A kind of plane perovskite solar battery Active CN209401654U (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114388697A (en) * 2021-11-04 2022-04-22 上海黎元新能源科技有限公司 Hole transport layer precursor solution and preparation method and application thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114388697A (en) * 2021-11-04 2022-04-22 上海黎元新能源科技有限公司 Hole transport layer precursor solution and preparation method and application thereof

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