CN108987583A - The perovskite solar battery that defect is passivated - Google Patents
The perovskite solar battery that defect is passivated Download PDFInfo
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Abstract
The present invention relates to a kind of perovskite solar batteries that defect is passivated, and belong to technical field of solar batteries.The perovskite solar battery that defect of the invention is passivated includes: perovskite light-absorption layer, the perovskite light-absorption layer is made of the perovskite precursor solution spin coating annealing of doping thiazole or thiazole, and the mole of thiazole or thiazole is CH in perovskite light-absorption layer in the presoma3NH3PbI3‑xClxThe A% of mole, 0 < A≤100,0≤x≤0.5.The present invention adulterates thiazole in perovskite precursor solution, thiazole is coordinated with Pb atom, the micro of perovskite nucleation and crystallization can be regulated and controled, so that there is uniform nucleation site in solution, delay crystal growth, keep crystallite dimension big and uniform, effectively inhibits the volume defect in perovskite, in the service life for extending carrier, avoid the generation of leakage current.
Description
Technical field
The present invention relates to a kind of perovskite solar batteries that defect is passivated, and belong to technical field of solar batteries.
Background technique
In recent decades, as industrial development and population increase, global energy requirements are continuously increased, at present still mainly according to
Rely traditional energy, such as petroleum, coal and natural gas.Up to the present, the energy consumption more than 80% comes from fossil fuel, this leads
The problems such as having caused environmental pollution and climate warming.Importantly, fossil fuel is non-renewable energy resources, future exhausts at last.
And the more low pollutions of development need of modern society, the sustainable energy.Solar energy be the mankind it is inexhaustible, it is nexhaustible can
The renewable sources of energy, while being also clean energy resource, any environmental pollution will not be generated in use.It can be carried out hair using the sun
Electricity is research field with fastest developing speed in recent years, most active.People have developed and have developed various solar batteries.
Currently, silica-based solar cell, especially monocrystaline silicon solar cell have been realized in since transformation efficiency is higher
Commercialization, and occupies leading position in large-scale application and industrial production, but due to its high material price and cumbersome
Preparation process so that its cost is high, and it is extremely difficult that its cost is greatly lowered.Perovskite solar energy in recent years
Battery (perovskitesolarcells) development is swift and violent, is found for the first time from 2009 so far, photoelectric conversion efficiency from
3.8% is promoted to 22.7%, and efficiency presses on towards commercialized silica-based solar cell.Perovskite solar battery has cost
It is cheap, the advantages that preparation process is simple, and photoelectric conversion efficiency is high.It is most potential photovoltaic device.
The exciton bind energy of perovskite material is lower, and when sunlight incidence, perovskite light absorbing layer can absorb photon generation
Exciton, these excitons can be decomposed into electrons and holes quickly.Perovskite material has simultaneous transmission electrons and holes current-carrying simultaneously
The function of son.Electronics reaches cathode FTO or ITO electro-conductive glass by electron transfer layer, is then collected output；Hole passes through sky
Cave transport layer is collected by anode metal electrodes.Finally, just producing photogenerated current between load access cathode and anode.System
The main method of standby perovskite is one step spin-coating method of solution, i.e., perovskite presoma is spin-coated on hole/electron transfer layer, then
Annealing obtains perovskite crystal film.This method is simple and fast, low in cost.However, during film forming perovskite at
Crystalline nucleation and crystal growth are not easy to control, are easy to cause perovskite crystalline incomplete, imperfections in crystal is largely assembled, and film covers
The problems such as lid rate is low.Carrier lifetime is short in the perovskite thin film of poor quality, and leakage current is high, eventually leads to entire perovskite too
Positive energy lower cell performance.
Summary of the invention
The invention solves first problem be to provide a kind of perovskite solar battery that defect is passivated, the battery
Perovskite thin film crystal defect it is few.
In order to solve the first technical problem mentioned above, the perovskite solar battery that defect of the invention is passivated includes: calcium
Titanium ore light-absorption layer, the perovskite light-absorption layer are annealed by the perovskite precursor solution spin coating of doping thiazole or thiazole and are made
At the mole of thiazole or thiazole is CH in perovskite light-absorption layer in the presoma3NH3PbI3-xClxMole
A%, 0 < A≤100,0≤x≤0.5.
Thiazole can be chelated with lead atom, delay to crystallize, and regulate and control the micro of crystal growth, passivation crystal boundary is to reduce
Carrier it is compound, promoted carrier lifetime, promote the performance of device.
Preferably, 25≤A≤75, preferably A are 50.
Preferably, the thiazole is thiazole chlorine, 5- methyl mercapto -1,3,4- thiadiazoles -2- mercaptan, the different thiophene of methyl
At least one of azoles.
Preferably, the battery further includes conductive substrates, hole transmission layer, electron transfer layer, buffer layer and to electrode；Institute
It states hole transmission layer to be arranged in conductive substrates, the perovskite light-absorption layer is arranged on the hole transport layer, the electron-transport
Layer is arranged on perovskite light-absorption layer, and the buffer layer setting is on the electron transport layer, described that electrode is arranged on the buffer layer.
Preferably, the conductive substrates are with a thickness of 100~200 nanometers；The thickness of hole transport layer is received for 30~50
Rice；The perovskite light-absorption layer with a thickness of 320~360 nanometers；Described is 60~100 nanometers to thickness of electrode.
Preferably, the hole transmission layer is any one in NiOx, PEDOT:PSS, CuI or CuSCN；
The conductive substrates are preferably any in FTO glass, ito glass, flexibility ITO or polyethylene naphthalate
Kind.
Preferably, the buffer layer is any one in PEI, PEIE, BCP.
Preferably, described is any one in aluminium, silver or gold to electrode.
Preferably, the preparation method for the perovskite solar battery that the defect is passivated includes the following steps:
A. any one in NiOx, PEDOT:PSS, CuI, CuSCN or its corresponding precursor compound is spin-coated on
On electro-conductive glass, annealing obtains hole transmission layer under the conditions of 295~305 DEG C；
B. methylamine iodine, lead iodide, thiazole or thiazole are dissolved in DMF, perovskite precursor solution is made, then will
Precursor solution spin coating obtains perovskite thin film on the hole transport layer, in 95~105 DEG C of annealing crystallizations, and the thiazole or thiazole spread out
The molar ratio of biology and lead iodide is A%, 0 A≤100 <, preferably 25≤A≤75: more preferable the methylamine iodine, lead iodide, thiophene
The molar ratio of azoles or thiazole is 2:2:1；
C. PCBM chlorobenzene solution is uniformly spin-coated on perovskite thin film and forms electron transfer layer, the concentration of the PCBM
Preferably 18~22mg/mL；
D. the uniform spin coating of PEI aqueous isopropanol is formed into buffer layer on the electron transport layer；
E. the method for using thermal evaporation, is deposited silver, aluminium or gold electrode layer on the buffer layer.
The invention solves second technical problem be to provide perovskite solar battery that drawbacks described above is passivated
Preparation method.
To solve second technical problem of the invention, the preparation side for the perovskite solar battery that the defect is passivated
Method includes the following steps:
A. any one in NiOx, PEDOT:PSS, CuI, CuSCN or its corresponding precursor compound is spin-coated on
On electro-conductive glass, annealing obtains hole transmission layer under the conditions of 295~305 DEG C；
B. methylamine iodine, lead iodide, thiazole or thiazole are dissolved in DMF, perovskite precursor solution is made, then will
Precursor solution spin coating obtains perovskite thin film on the hole transport layer, in 95~105 DEG C of annealing crystallizations, and the thiazole or thiazole spread out
The molar ratio of biology and lead iodide is A%, 0 A≤100 <, preferably 25≤A≤75: more preferable the methylamine iodine, lead iodide, thiophene
The molar ratio of azoles or thiazole is 2:2:1；
C. PCBM chlorobenzene solution is uniformly spin-coated on perovskite thin film and forms electron transfer layer, the concentration of the PCBM
Preferably 18~22mg/mL；
D. the uniform spin coating of PEI aqueous isopropanol is formed into buffer layer on the electron transport layer；
E. the method for using thermal evaporation, is deposited silver, aluminium or gold electrode layer on the buffer layer.
The utility model has the advantages that
1. the present invention adulterates thiazole in perovskite precursor solution, thiazole is coordinated with Pb atom, can regulate and control calcium titanium
The micro of mine nucleation and crystallization delays crystal growth so that there is uniform nucleation site in solution, keeps crystallite dimension big
And it is uniform, effectively inhibit the volume defect in perovskite, extends the service life of carrier, avoid the generation of leakage current.
2. the method that the present invention prepares perovskite solar battery is simple, high-efficient, at low cost, the big rule of industrialization are easily realized
Mould production, and the performance of obtained solar battery has a distinct increment.
Detailed description of the invention
The IV curve comparison figure for the perovskite solar battery that Fig. 1 embodiment 1 and comparative example 1 obtain；
The perovskite thin film surface SEM picture that Fig. 2 embodiment 1 and comparative example 1 obtain；
The stable state absorption spectrum for the perovskite thin film that Fig. 3 embodiment 1 and comparative example 1 obtain；
Fig. 4 is the IV curve comparison figure for the perovskite solar battery that embodiment 2 and comparative example 2 obtain；
Fig. 5 is the perovskite thin film surface SEM picture that embodiment 2 and comparative example 2 obtain；
Fig. 6 is the stable state absorption spectrum for the perovskite thin film that embodiment 2 and comparative example 2 obtain；
Specific embodiment
In order to solve the first technical problem mentioned above, the perovskite solar battery that defect of the invention is passivated includes: calcium
Titanium ore light-absorption layer, the perovskite light-absorption layer are annealed by the perovskite precursor solution spin coating of doping thiazole or thiazole and are made
At the mole of thiazole or thiazole is CH in perovskite light-absorption layer in the presoma3NH3PbI3-xClxMole
A%, 0 < A≤100,0≤x≤0.5.
Preferably, 25≤A≤75, preferred A are 50.
Preferably, the thiazole is thiazole chlorine, 5- methyl mercapto -1,3,4- thiadiazoles -2- mercaptan, the different thiophene of methyl
At least one of azoles.
Preferably, the battery further includes conductive substrates, hole transmission layer, electron transfer layer, buffer layer and to electrode；Institute
It states hole transmission layer to be arranged in conductive substrates, the perovskite light-absorption layer is arranged on the hole transport layer, the electron-transport
Layer is arranged on perovskite light-absorption layer, and the buffer layer setting is on the electron transport layer, described that electrode is arranged on the buffer layer.
Preferably, the conductive substrates are with a thickness of 100~200 nanometers；The thickness of hole transport layer is received for 30~50
Rice；The perovskite light-absorption layer with a thickness of 320~360 nanometers；Described is 60~100 nanometers to thickness of electrode.
Preferably, the hole transmission layer is any one in NiOx, PEDOT:PSS, CuI or CuSCN；The conduction
Substrate is preferably FTO glass, ito glass, flexibility any one of ITO or polyethylene naphthalate.
Preferably, the buffer layer is any one in PEI, PEIE, BCP.
Preferably, described is any one in aluminium, silver or gold to electrode.
Preferably, the preparation method for the perovskite solar battery that the defect is passivated includes the following steps:
A. any one in NiOx, PEDOT:PSS, CuI, CuSCN or its corresponding precursor compound is spin-coated on
On electro-conductive glass, annealing obtains hole transmission layer under the conditions of 295~305 DEG C；
B. methylamine iodine, lead iodide, thiazole or thiazole are dissolved in DMF, perovskite precursor solution is made, then will
Precursor solution spin coating obtains perovskite thin film on the hole transport layer, in 95~105 DEG C of annealing crystallizations, and the thiazole or thiazole spread out
The molar ratio of biology and lead iodide is A%, 0 A≤100 <, preferably 25≤A≤75: more preferable the methylamine iodine, lead iodide, thiophene
The molar ratio of azoles or thiazole is 2:2:1；
C. PCBM chlorobenzene solution is uniformly spin-coated on perovskite thin film and forms electron transfer layer, the concentration of the PCBM
Preferably 18~22mg/mL；
D. the uniform spin coating of PEI aqueous isopropanol is formed into buffer layer on the electron transport layer；
E. the method for using thermal evaporation, is deposited silver, aluminium or gold electrode layer on the buffer layer.
To solve second technical problem of the invention, the preparation side for the perovskite solar battery that the defect is passivated
Method includes the following steps:
A. any one in NiOx, PEDOT:PSS, CuI, CuSCN or its corresponding precursor compound is spin-coated on
On electro-conductive glass, annealing obtains hole transmission layer under the conditions of 295~305 DEG C；
B. methylamine iodine, lead iodide, thiazole or thiazole are dissolved in DMF, perovskite precursor solution is made, then will
Precursor solution spin coating obtains perovskite thin film on the hole transport layer, in 95~105 DEG C of annealing crystallizations, and the thiazole or thiazole spread out
The molar ratio of biology and lead iodide is A%, 0 A≤100 <, preferably 25≤A≤75: more preferable the methylamine iodine, lead iodide, thiophene
The molar ratio of azoles or thiazole is 2:2:1；
C. PCBM chlorobenzene solution is uniformly spin-coated on perovskite thin film and forms electron transfer layer, the concentration of the PCBM
Preferably 18~22mg/mL；
D. the uniform spin coating of PEI aqueous isopropanol is formed into buffer layer on the electron transport layer；
E. the method for using thermal evaporation, is deposited silver, aluminium or gold electrode layer on the buffer layer.
A specific embodiment of the invention is further described below with reference to embodiment, is not therefore limited the present invention
System is among the embodiment described range.
Embodiment 1
Using FTO as substrate, NiOxFor hole transmission layer, CH3NH3PbI3It is electron transfer layer for light-absorption layer, PCBM, PEI is
Buffer layer, silver are the preparation method to the perovskite solar battery of electrode:
Step 1: FTO glass being cut into the size of 2cm × 2cm, successively uses deionized water, acetone and washes of absolute alcohol
Surface is dried with nitrogen stand-by；
Step 2: tetra- water nickel acetate of 0.497g and 0.135mL ethylenediamine being added in 4mL ethylene glycol, is stirred overnight, obtains
To mixed solution A；
Step 3: the FTO glass surface spin coating mixed liquor A after step 1 cleaning is toasted at 125 DEG C, then at 300 DEG C
Lower annealing 60min, obtains NiOx hole transmission layer；
Step 4: by 624mgPbI2, 0.05mL thiazole and 216mgCH3NH3I is dissolved in 1mLDMF, at the uniform velocity stirring 12h, is obtained
To the CH of 1.35mM3NH3PbI3Precursor liquid；
Step 5: the CH of 0.1mL is added dropwise in the nickel oxide hole transport layer surface that step 3 obtains3NH3PbI3Precursor liquid, it is quiet
Only after one minute, with the revolving speed spin coating 30s of 5000r/min；After the completion of spin coating, 3min is toasted at 60 DEG C to dry solvent, then
10min is toasted at 100 DEG C, high coverage, big crystal grain, the extinction layer film with mirror effect can be obtained；
Step 6: PCBM electron transfer layer being prepared using spin-coating method in the light-absorption layer film surface that step 5 obtains；Spin coating liquid
For the PCBM chlorobenzene solution of 20mg/mL.With 2000r/min spin coating 30s.
Step 7: in the aqueous isopropanol for the electron-transport layer surface spin coating PEI that step 6 obtains, with turning for 4000r/min
Fast spin coating 30s；3min is toasted after the completion of spin coating at 100 DEG C and obtains buffer layer to dry solvent.
Step 8: in the silver for the buffer-layer surface vapor deposition 80nm thickness that step 7 obtains, as to electrode.
Comparative example 1
Using FTO as substrate, NiOxFor hole transmission layer, CH3NH3PbI3It is electron transfer layer for light-absorption layer, PCBM, PEI is
Buffer layer, silver are the preparation method to the perovskite solar battery of electrode:
Step 1: FTO glass being cut into the size of 2cm × 2cm, successively uses deionized water, acetone and washes of absolute alcohol
Surface is dried with nitrogen stand-by；
Step 2: tetra- water nickel acetate of 0.497g and 0.135mL ethylenediamine being added in 4mL ethylene glycol, is stirred overnight, obtains
To mixed solution A；
Step 3: the FTO glass surface spin coating mixed liquor A after step 1 cleaning is toasted at 125 DEG C, then at 300 DEG C
Lower annealing 60min, obtains NiOxHole transmission layer；
Step 4: by 624mgPbI2And 216mgCH3NH3I is dissolved in 1mLDMF, at the uniform velocity stirring 12h, is obtained containing 1.35mM
CH3NH3PbI3Precursor liquid；
Step 5: the CH of 0.1mL is added dropwise in the nickel oxide hole transport layer surface that step 3 obtains3NH3PbI3Precursor liquid, it is quiet
Only after one minute, with the revolving speed spin coating 30s of 5000r/min；After the completion of spin coating, 3min is toasted at 60 DEG C to dry solvent, then
10min is toasted at 100 DEG C, extinction layer film can be obtained；
Step 6: PCBM electron transfer layer being prepared using spin-coating method in the light-absorption layer film surface that step 5 obtains；Spin coating liquid
For the PCBM chlorobenzene solution of 20mg/mL.With 2000r/min spin coating 30s.
Step 7: in the aqueous isopropanol for the electron-transport layer surface spin coating PEI that step 6 obtains, with turning for 4000r/min
Fast spin coating 30s；3min is toasted after the completion of spin coating at 100 DEG C and obtains buffer layer to dry solvent.
Step 8: in the silver for the buffer-layer surface vapor deposition 80nm thickness that step 7 obtains, as to electrode.
Fig. 1 is the IV curve comparison figure for the perovskite solar battery that embodiment 1 and comparative example 1 obtain；It will implement respectively
The light-absorption layer for the perovskite solar battery that the light-absorption layer and comparative example 1 for the perovskite solar battery that example 1 obtains obtain,
AM1.5G,100mW/cm2Xenon lamp irradiation it is lower carry out IV test, wherein scanning voltage is 0~1.2V, scanning speed 10mV/
s.As shown in Figure 1, under same scan speed, the perovskite solar battery of embodiment 1 compares the perovskite sun of comparative example 1
Can battery electric current and fill factor obviously increase, show have preferably on perovskite solar battery tool that embodiment 1 obtains
Performance.
Fig. 2 is the perovskite thin film surface SEM picture that embodiment 1 and comparative example 1 obtain, as shown in Figure 2, embodiment 1
Perovskite thin film is obviously increased compared to the crystallite dimension of the perovskite thin film of comparative example 1, and the perovskite for showing that embodiment 1 obtains is thin
Film has better quality.
Fig. 3 is the stable state absorption spectrum for the perovskite thin film that embodiment 1 and comparative example 1 obtain, from the figure 3, it may be seen that embodiment 1
Perovskite thin film significantly reduced compared to the carrier non-radiative recombination of perovskite thin film of comparative example 1, show that embodiment 1 obtains
Perovskite thin film have better quality.
Embodiment 2
The difference of the present embodiment and embodiment 1 are as follows: 624mgPbI described in step 42, 0.05mL thiazole and 216mgCH3NH3I
It is dissolved in 1mLDMF, is changed to 560mgPbI2, 0.05mL thiazole and 200mgCH3NH3I is dissolved in 1mLDMF.Remaining step and implementation
1 is identical.
Comparative example 2
The difference of comparative example 2 and comparative example 1 are as follows: the process of step 5 are as follows: in the nickel oxide hole transmission layer that step 3 obtains
The CH of surface dropwise addition 0.1mL3NH3PbI3Precursor liquid, after static one minute, with the revolving speed spin coating 30s of 3000r/min；Spin coating is completed
Afterwards, 3min is toasted at 60 DEG C to dry solvent, then toasts 10min at 100 DEG C to get extinction layer film is arrived.Remaining step
It is identical as comparative example 1.
Fig. 4 is the IV curve comparison figure for the perovskite solar battery that embodiment 2 and comparative example 2 obtain；It will implement respectively
The light-absorption layer for the perovskite solar battery that the light-absorption layer and comparative example 2 for the perovskite solar battery that example 2 obtains obtain,
AM1.5G,100mW/cm2Xenon lamp irradiation it is lower carry out IV test, wherein scanning voltage is 0~1.2V, and retouching speed is 10mV/s.
As shown in Figure 4, under same scan speed, the perovskite solar battery of embodiment 2 compares the perovskite solar energy of comparative example 2
The electric current and fill factor of battery obviously increase, and show there is better property on perovskite solar battery tool that embodiment 2 obtains
Energy.
Fig. 5 is the perovskite thin film surface SEM picture that embodiment 2 and comparative example 2 obtain, as shown in Figure 5, embodiment 2
Perovskite thin film is obviously increased compared to the crystallite dimension of the perovskite thin film of comparative example 2, and the perovskite for showing that embodiment 2 obtains is thin
Film has better quality.
Fig. 6 is the stable state absorption spectrum for the perovskite thin film that embodiment 2 and comparative example 2 obtain, it will be appreciated from fig. 6 that embodiment 2
Perovskite thin film significantly reduced compared to the carrier non-radiative recombination of perovskite thin film of comparative example 2, show that embodiment 2 obtains
Perovskite thin film have better quality.
Perovskite solar battery of the present invention is only doped regulation on perovskite light-absorption layer, effectively overcomes one-step method
The defects of pin hole, light-absorption layer endless all standing, high coverage, big crystal grain, the extinction layer film with mirror effect are obtained, has been made too
The fill factor and electric current of positive energy battery obviously increase, and improve the performance of solar battery.
The present invention is doped perovskite light-absorption layer on the basis of conventional method, i.e., in perovskite precursor solution
Thiazole is adulterated, light-absorption layer crystal grain had both been increased, make original lesser particle growth and is joined together, and effectively reduces light-absorption layer
Porosity, while the generation of leakage current is avoided, so that the performance of perovskite solar battery is effectively increased, to prepare big face
Product device provides foundation.The method of the present invention is easy to operate, at low cost, easily realization industrialization large-scale production.
Claims (10)
1. the perovskite solar battery that defect is passivated, which is characterized in that the battery includes perovskite light-absorption layer, the calcium
Titanium ore light-absorption layer is made of the perovskite precursor solution spin coating annealing of doping thiazole or thiazole, thiophene in the presoma
The mole of azoles or thiazole is CH in perovskite light-absorption layer3NH3PbI3-xClxThe A% of mole, 0 < A≤100,0≤x
≤0.5。
2. the perovskite solar battery that defect according to claim 1 is passivated, which is characterized in that the 25≤A≤
75, preferably A are 50.
3. the perovskite solar battery that defect according to claim 1 or 2 is passivated, which is characterized in that the thiophene
Zole derivatives are thiazole chlorine, 5- methyl mercapto -1,3, at least one of 4- thiadiazoles -2- mercaptan, methyl-isothiazol.
4. the perovskite solar battery that described in any item defects are passivated according to claim 1~3, which is characterized in that institute
Stating battery further includes conductive substrates, hole transmission layer, electron transfer layer, buffer layer and to electrode；The hole transmission layer setting
In conductive substrates, on the hole transport layer, the electron transfer layer setting is inhaled in perovskite for the perovskite light-absorption layer setting
On photosphere, the buffer layer setting is on the electron transport layer, described that electrode is arranged on the buffer layer.
5. the perovskite solar battery that defect according to claim 4 is passivated, which is characterized in that the conductive base
Bottom is with a thickness of 100~200 nanometers；The thickness of hole transport layer is 30~50 nanometers；The perovskite light-absorption layer with a thickness of
320~360 nanometers；Described is 60~100 nanometers to thickness of electrode.
6. the perovskite solar battery that defect according to claim 4 or 5 is passivated, which is characterized in that the hole
Transport layer is any one in NiOx, PEDOT:PSS, CuI or CuSCN；
The conductive substrates are preferably FTO glass, ito glass, flexibility any one of ITO or polyethylene naphthalate.
7. the perovskite solar battery that defect according to any one of claim 4 to 6 is passivated, which is characterized in that institute
Stating buffer layer is any one in PEI, PEIE, BCP.
8. the perovskite solar battery being passivated according to the described in any item defects of claim 4~7, which is characterized in that institute
Stating to electrode is any one in aluminium, silver or gold.
9. the perovskite solar battery that defect according to claim 8 is passivated, which is characterized in that the defect is blunt
The preparation method of the perovskite solar battery of change includes the following steps:
A. any one in NiOx, PEDOT:PSS, CuI, CuSCN or its corresponding precursor compound is spin-coated on conduction
On glass, annealing obtains hole transmission layer under the conditions of 295~305 DEG C；
B. methylamine iodine, lead iodide, thiazole or thiazole are dissolved in DMF, perovskite precursor solution is made, then by forerunner
Solution spin coating obtains perovskite thin film, the thiazole or thiazole on the hole transport layer, in 95~105 DEG C of annealing crystallizations
Be A% with the molar ratio of lead iodide, 0 A≤100 <, preferably 25≤A≤75: the more preferable methylamine iodine, lead iodide, thiazole or
The molar ratio of thiazole is 2:2:1；
C. PCBM chlorobenzene solution is uniformly spin-coated on perovskite thin film and forms electron transfer layer, the concentration of the PCBM is preferred
For 18~22mg/mL；
D. the uniform spin coating of PEI aqueous isopropanol is formed into buffer layer on the electron transport layer；
E. the method for using thermal evaporation, is deposited silver, aluminium or gold electrode layer on the buffer layer.
10. the preparation method for the perovskite solar battery that defect is passivated, which is characterized in that the method includes walking as follows
It is rapid:
A. any one in NiOx, PEDOT:PSS, CuI, CuSCN or its corresponding precursor compound is spin-coated on conduction
On glass, annealing obtains hole transmission layer under the conditions of 295~305 DEG C；
B. methylamine iodine, lead iodide, thiazole or thiazole are dissolved in DMF, perovskite precursor solution is made, then by forerunner
Solution spin coating obtains perovskite thin film, the thiazole or thiazole on the hole transport layer, in 95~105 DEG C of annealing crystallizations
Be A% with the molar ratio of lead iodide, 0 A≤100 <, preferably 25≤A≤75: the more preferable methylamine iodine, lead iodide, thiazole or
The molar ratio of thiazole is 2:2:1；
C. PCBM chlorobenzene solution is uniformly spin-coated on perovskite thin film and forms electron transfer layer, the concentration of the PCBM is preferred
For 18~22mg/mL；
D. the uniform spin coating of PEI aqueous isopropanol is formed into buffer layer on the electron transport layer；
E. the method for using thermal evaporation, is deposited silver, aluminium or gold electrode layer on the buffer layer.
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| CN109638167A (en) * | 2019-01-14 | 2019-04-16 | 暨南大学 | A kind of 8-hydroxyquinoline metal complex Ca-Ti ore type solar battery and preparation method thereof |
| CN111081816A (en) * | 2019-12-19 | 2020-04-28 | 华中科技大学 | Perovskite nanocrystalline with alkali metal ion passivated surface defect and preparation and application thereof |
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| CN113675343A (en) * | 2021-08-17 | 2021-11-19 | 华南农业大学 | Perovskite thin film adopting multifunctional group ligand quantum dots and preparation and application thereof |
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| CN109638167A (en) * | 2019-01-14 | 2019-04-16 | 暨南大学 | A kind of 8-hydroxyquinoline metal complex Ca-Ti ore type solar battery and preparation method thereof |
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| CN111081816A (en) * | 2019-12-19 | 2020-04-28 | 华中科技大学 | Perovskite nanocrystalline with alkali metal ion passivated surface defect and preparation and application thereof |
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| CN113782675A (en) * | 2020-06-10 | 2021-12-10 | 大正(江苏)微纳科技有限公司 | Artemisinin compound-doped perovskite solar cell and preparation method thereof |
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