CN209401636U - Normal incidence photoelectric chip and its encapsulating structure - Google Patents
Normal incidence photoelectric chip and its encapsulating structure Download PDFInfo
- Publication number
- CN209401636U CN209401636U CN201822196276.8U CN201822196276U CN209401636U CN 209401636 U CN209401636 U CN 209401636U CN 201822196276 U CN201822196276 U CN 201822196276U CN 209401636 U CN209401636 U CN 209401636U
- Authority
- CN
- China
- Prior art keywords
- chip
- light
- area
- light splitting
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Light Receiving Elements (AREA)
Abstract
The utility model relates to optic communication transmission technique fields, the utility model provides a kind of normal incidence photoelectric chip and its encapsulating structure, a kind of normal incident light electrical chip, including substrate, absorbed layer and top layer, absorbed layer is between substrate and top layer, and top layer counter substrate is closer to the front of chip；Light splitting hole is opened up on chip, absorbed layer is run through in light splitting hole；Extinction area and first electrode are additionally provided on the front of chip, first electrode is located at the outside in extinction area；With the front of chip for incident side, a part of incident light is separated from the transmission of light splitting hole, and another part of incident light is entered from extinction area carries out photoelectric conversion in absorbed layer；Therefore normal incidence photoelectric chip provided by the utility model can either be divided, and can be monitored to the optical power of incident light；And then using the light path system of chip provided by the utility model, it is divided without using optical splitter, reduces system bulk, also reduce cost.
Description
Technical field
The utility model relates to optic communication transmission technique fields, and in particular to a kind of normal incidence photoelectric chip and its encapsulation
Structure.
Background technique
The optical signal of laser transmitting is transferred into before passive optical waveguide (PLC) through optical fiber, it usually needs optical splitter
It separates on (such as 5%) optical signal to other light-receiving chip of part, carries out optical power monitoring.The light of remaining (such as 95%)
Signal, to optical waveguide, is transmitted by fiber coupling.
Utility model content
The main purpose of the utility model is to provide a kind of normal incidence photoelectric chip and its encapsulating structure, which can
It is enough to realize light splitting, and can be realized the monitoring of optical power.
In order to realize above-mentioned technical problem, the utility model provides a kind of normal incidence photoelectric chip, including substrate, suction
Layer and top layer are received, the absorbed layer is between the substrate and the top layer, and the relatively described substrate of the top layer is closer to institute
State the front of chip；Light splitting hole is opened up on the chip, the absorbed layer is run through in the light splitting hole；
Extinction area and first electrode are additionally provided on the front of the chip, the first electrode is located at the outer of the extinction area
Side；
With the front of the chip for incident side, from the light splitting hole, transmission separates a part of incident light, incident light
Another part enters from the extinction area and carries out photoelectric conversion in the absorbed layer.
Normal incidence photoelectric chip provided by the utility model is provided with light splitting hole, and absorbed layer is run through in light splitting hole.Chip
Extinction area is additionally provided on front.Incident light injects chip from the side of chip front side, and a part of light is separated from the transmission of light splitting hole, because
Chip can be passed through without absorbed layer is lossless by light splitting hole for this part light, continue optical signal transmission；And another portion
Light splitting will be entered from extinction area carries out photoelectric conversion in absorbed layer, photo-generated carrier is generated, thus to the light function of incident light
Rate carries out effective monitoring.Therefore normal incidence photoelectric chip provided by the utility model can either be divided, and can be to incident light
Optical power is monitored.And then using the light path system of chip provided by the utility model, divided without using optical splitter
Light reduces system bulk, also reduces cost.
Further, photosensitive area is equipped in the top layer；The inner end of the photosensitive area is connected with the absorbed layer, described
The outer end of photosensitive area is connected with the first electrode；There are overlapping region in the extinction area and the photosensitive area.
Further, the light splitting hole is open to the direction of the chip front side and runs through the top layer.
Further, buffer layer is additionally provided between the substrate and the absorbed layer, the inner end in the light splitting hole is located at institute
State buffer layer.
Further, the back side of the chip is equipped with second electrode, and the second electrode is connected with the substrate.
Further, it is equipped in the extinction area into light anti-reflection film.
Further, the inner end in the light splitting hole is equipped with light transmission anti-reflection film.
Further, the back side of the chip is equipped with light anti-reflection film, and the area of the light anti-reflection film out is greater than described point
Unthreaded hole is along the cross-sectional area for being parallel to the chip surface direction.
Further, the photosensitive area edge is parallel to the cross section in the chip surface direction in a ring and around described point
Unthreaded hole setting, the extinction area are arranged in a ring and around the light splitting hole, and the first electrode edge is parallel to the chip list
The cross section in face direction is arranged in a ring and around the extinction area.
The utility model also provides a kind of encapsulating structure of normal incidence photoelectric chip, including shell and normal incidence photoelectricity
Chip, the normal incidence photoelectric chip are the normal incidence photoelectric chip of any description above；The chip is set to the pipe
In shell, the shell is equipped with the first optical fiber interface and the second optical fiber interface；First optical fiber interface and second optical fiber
Interface is respectively arranged on the front and back of chip.
Detailed description of the invention
The advantages of the utility model is above-mentioned and/or additional aspect will become from the description of the embodiment in conjunction with the following figures
Obviously and it is readily appreciated that, in which:
Fig. 1 is the main view of normal incidence photoelectric chip provided by the embodiment of the utility model；
Fig. 2 is cross-sectional view of the chip shown in FIG. 1 along A-A '；
Fig. 3 is the cross-sectional view for the normal incidence photoelectric chip that another embodiment of the utility model provides；
Fig. 4 is the rearview of normal incidence photoelectric chip provided by the embodiment of the utility model.
The wherein corresponding relationship in Fig. 1 to Fig. 4 between appended drawing reference and component names are as follows:
1, substrate, 2, buffer layer, 3, absorbed layer, 4, top layer, 5, light splitting hole, 6, light transmission anti-reflection film, 7, photosensitive area, 8, extinction
Area, 9, first electrode, 11, electrode pad, 12, passivating film, 13, second electrode, 14, go out light anti-reflection film, 15, incident light, 151,
A part of light, 152, another part light.
Specific embodiment
In order to be more clearly understood that the above objects, features, and advantages of the utility model, with reference to the accompanying drawing and have
The utility model is further described in detail in body embodiment.It should be noted that in the absence of conflict, this Shen
The feature in embodiment and embodiment please can be combined with each other.
Please referring to Fig. 1 and Fig. 2, the utility model provides a kind of embodiment of normal incidence photoelectric chip, including substrate 1,
Buffer layer 2, absorbed layer 3 and top layer 4.For buffer layer 2 between substrate 1 and absorbed layer 3, top layer 4 is located at absorbed layer 3 and buffer layer
A 2 opposite surfaces.4 counter substrate 1 of top layer is closer to the front of chip.In the present embodiment, substrate 1 is by mixing the phosphorus of sulphur (S)
Change indium (InP) material to be made, buffer layer 2 is made of indium phosphide (InP) material, and absorbed layer 3 is by indium gallium arsenic (InGaAs) material system
At top layer 4 is made of indium phosphide (InP) material.
Light splitting hole 5 is opened up on the normal incidence photoelectric chip of embodiment provided by the utility model, light splitting hole 5 is through absorption
Layer 3, light splitting hole 5 is through some or all of chip.In the present embodiment, light splitting hole 5 is open to the direction of chip front side, light splitting
Hole 5 also extends through top layer 4 and inner end is located at buffer layer 2, since top layer 4 and absorbed layer 3 are all than relatively thin, therefore opens up the work for being divided hole 5
Skill is simple, easily prepared and production.
In another embodiment, light splitting hole 5 can also be open to the direction of chip back, such as through substrate 1, buffering
Layer 2 and absorbed layer 3.
In yet another embodiment, referring to FIG. 3, light splitting hole 5 becomes through-hole through entire chip.
In the present embodiment, the inner end for being divided hole 5 is equipped with light transmission anti-reflection film 6, to increase light transmission rate.
Photosensitive area 7 is equipped in top layer 4, the inner end of photosensitive area 7 is connected with absorbed layer 3.Specifically, photosensitive area 7 is along parallel
In a ring and the setting of light splitting hole 5 is surrounded in the cross section in chip surface direction
Extinction area 8 and first electrode 9 are additionally provided on the front of chip, there are overlapping region in extinction area 8 and photosensitive area 7, so that
The a part for obtaining incident light is entered from extinction area 8 carries out photoelectric conversion in absorbed layer 3.Specifically, extinction area 8 in a ring and encloses
It is arranged around light splitting hole 5.
In the present embodiment, it is equipped in extinction area 8 into light anti-reflection film, to increase light impingement rate.
First electrode 9 is located at the outside in extinction area 8, and specifically, first electrode 9 is along being parallel to the transversal of chip surface direction
Face is arranged in a ring and around extinction area 8.
Electrode pad 11 is additionally provided on the front of chip, first electrode 9 is electrically connected with electrode pad 11.
It is additionally provided with passivating film 12 on the front of chip, offers for first electrode 9 to be arranged on passivating film 12 respectively
One electrode through-hole and electrode pad through-hole for electrode pad 11 to be arranged.
Referring to FIG. 4, the back side of chip is additionally provided with second electrode 13 and out light anti-reflection film 14, second electrode 13 and substrate 1
It is connected, the anti-reflection fenestra of light out for light anti-reflection film 14 to be provided is offered in second electrode 13.The face of light anti-reflection film 14 out
Product is greater than light splitting hole 5 along the cross-sectional area for being parallel to chip surface direction, so that a part of incident light enters light splitting hole 5
It is interior and can from chip back go out light anti-reflection film 14 project.
In the present embodiment, first electrode 9 and photosensitive area 7 are in annulus along the cross section being parallel on chip surface direction
Shape enters light anti-reflection film in circular ring shape, is divided hole 5 and light anti-reflection film 14 is rounded out.It is divided hole 5, first electrode 9, photosensitive area 7
With enter light anti-reflection film and light anti-reflection film 14 is concentric circles out, and center of circle alignment error is less than 20um.Light splitting hole 5 diameter be
50um~250um, the internal diameter in extinction area 8 is not less than the diameter for being divided hole 5.The internal diameter of first electrode 9 is outer not less than extinction area 8
Diameter.The outer diameter of first electrode 9 is 60um~1000um.Diameter of the internal diameter of photosensitive area 7 not less than light splitting hole 5.
In the present embodiment, the inward flange in extinction area 8 is connected with the edge in light splitting hole 5, the outer edge in extinction area 8 and the
The inward flange of one electrode 9 is connected.The inward flange of photosensitive area 7 with light splitting hole 5 edge be connected, the outer edge of photosensitive area 7 with
The outer edge of first electrode 9 aligns.
The first electrode 9 of chip provided by the utility model is located at the front of chip, and second electrode 13 is set to the back of chip
Face.In actual use, when being powered on to chip, electrode pad 11 is electrically connected by bonding wire with first circuit board.In the back of chip
Face sets the second circuit board of one transparent (avoiding, which influences incident light, is injected into chip), and second circuit board is walked equipped with circuit
Line, second electrode 13 are electrically connected with the circuit trace on second circuit board.First circuit board and second circuit board are electrically connected again
The two poles of the earth of power supply are connected to, are powered on to realize to chip.
The working principle for the normal incidence photoelectric chip that utility model provides are as follows:
Reverse biased, chip operation are added to chip by first electrode 9 and second electrode 13.Incident light 15 from chip just
Face directive chip, a part of light 151 are injected in chip from the inner end in light splitting hole 5, and the part light is using substrate 1 and buffer layer 2
It is projected afterwards from light anti-reflection film 14 out, the reason is that this part light passes through chip without absorbed layer 3 is lossless by light splitting hole 5, after
It is continuous to carry out optical signal transmission.And another part light 152 is injected in chip from extinction area 8, this part light enter in absorbed layer 3 into
Row photoelectric conversion forms photoelectric current, calculates corresponding optical power using other a series of external circuits and device and go forward side by side
Row display, to realize the monitoring to incident light optical power.
The light intensity of incident light 15 is generally in Gaussian Profile, i.e., light intensity centre is strong, two sides are weak, and then most of light can pass through institute
The inner end for stating light splitting hole 5 is projected, and most light can proceed with the transmission of optical signal.The light of fraction can just enter described
Absorbed layer 3 carries out photoelectric conversion, to carry out the monitoring of optical power.
Determination is actually needed according to specific in the ratio for the light that incident light needs to separate, such as in the present embodiment, incident light
The ratio for the light for needing to separate is 10%.In optical link installation, it can use detecting element detection and separated by being divided slot
Light optical power, since total optical power of incident light is that known (total optical power of light source output is it is known that total light
Power is individually measured), so that it is determined that the ratio of the light separated whether meet demand.
If meet demand, the related component on optical link can be fixed.
It, can be by adjusting incident light source at a distance from the chip, so as to adjust the light separated if being unsatisfactory for demand
Ratio.
After the ratio-dependent for the light that incident light separates, can be injected into using remaining light in chip absorbed layer 3 into
Row photoelectric conversion generates photoelectric current, the optical power of remaining light is calculated according to the light-spot galvanometer of generation, thus to the light function of incident light
Rate is monitored.It is believed that the splitting ratio after installation generates the light of the part light of photoelectric current it has been determined that entering in chip
Power can directly symbolize the change rate of light source optical power, can if the subsequent total optical power real-time change value for needing incident light
It is obtained according to the calculated optical power of photoelectric current in embodiment by light splitting ratiometric conversion with selection.
The utility model also provides a kind of embodiment of the encapsulating structure of normal incidence photoelectric chip, including shell and just enters
Penetrate formula photoelectric chip.Normal incidence photoelectric chip is chip described in any of the above embodiment, and chip is set in shell.On shell
It is additionally provided with the first optical fiber interface and the second optical fiber interface, the first optical fiber interface and the second optical fiber interface are respectively arranged on the front of chip
The back side and.First optical fiber interface is connect for input optical fibre with shell, and the second optical fiber interface is connect for output optical fibre with shell.
Input optical fibre is located at the side of chip front side after being inserted into shell by the first optical fiber interface, and carries out optical path coupling with chip
It closes.Output optical fibre is located at the side of chip back after being inserted into shell by the second optical fiber interface, and carries out optical path with chip
Coupling.In the present embodiment, shell is in cuboid, and Chip Vertical is arranged in the bottom of shell, the first optical fiber interface and the second light
Fine interface is respectively arranged on the opposite two side walls in shell position.
A kind of working principle of the embodiment of the encapsulating structure of normal incidence photoelectric chip provided by the utility model are as follows: light
The light that source is launched after input optical fibre from chip front inject chip, a part of light from light splitting hole 5 in transmission separate after, warp
Output optical fibre is transmitted to optical waveguide.Another part light enters absorbed layer 3 out of extinction area 8 and carries out photoelectric conversion.
The encapsulating structure of normal incidence photoelectric chip provided by the utility model is connected to the first optical fiber interface on shell
It with the second optical fiber interface, applies when on light path system, is connect with optical fiber simple and convenient, and optical fiber couples letter with the optical path of chip
Just, therefore normal incidence photoelectric chip provided by the utility model is easy to use in light path system for folk prescription.
Normal incidence photoelectric chip provided by the utility model is provided with light splitting hole 5, and absorbed layer 3 is run through in light splitting hole 5.Chip
Front on be additionally provided with extinction area 8.Incident light injects chip from the side of chip front side, and a part of light divides from the transmission of light splitting hole 5
Out, because this part light can pass through chip without absorbed layer 3 is lossless by light splitting hole 5, continue optical signal transmission；And
Another part light will enter from extinction area 8 and carry out photoelectric conversion in absorbed layer 3, photo-generated carrier be generated, thus to incidence
The optical power of light carries out effective monitoring.Therefore normal incidence photoelectric chip provided by the utility model can either be divided, and can be right
The optical power of incident light is monitored.And then using the light path system of chip provided by the utility model, without using optical branching
Device is divided, and system bulk is reduced, and also reduces cost.
In the description of the utility model, it should be noted that the orientation or positional relationship of the instructions such as term " on ", "lower" is
It is based on the orientation or positional relationship shown in the drawings, is merely for convenience of describing the present invention and simplifying the description, rather than indicate
Or imply that signified device or element must have a particular orientation, be constructed and operated in a specific orientation, therefore cannot understand
For limitations of the present invention.In addition, term " first ", " second " are used for description purposes only, and should not be understood as instruction or
Imply relative importance.
In the description of the present invention, it should be noted that unless otherwise clearly defined and limited, term " is pacified
Dress ", " connection ", " connection " shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or integrally
Connection；It can be mechanical connection, be also possible to be electrically connected；Can be direct connection, can also by intermediary indirect communication,
It can be the connection inside two elements.For the ordinary skill in the art, above-mentioned art can be understood with concrete condition
The concrete meaning of language in the present invention.In addition, in the description of the present invention, unless otherwise indicated, " multiples' " contains
Justice is two or more.
The above is only the preferred embodiment of the present invention, is not intended to limit the utility model, all practical at this
Within novel spirit and principle, any modification, equivalent replacement, improvement and so on should be included in the guarantor of the utility model
Within the scope of shield.
Claims (10)
1. a kind of normal incidence photoelectric chip, it is characterised in that: including substrate, absorbed layer and top layer, the absorbed layer is located at institute
It states between substrate and the top layer, the relatively described substrate of the top layer is closer to the front of the chip；It is opened up on the chip
It is divided hole, the absorbed layer is run through in the light splitting hole；
Extinction area and first electrode are additionally provided on the front of the chip, the first electrode is located at the outside in the extinction area；
With the front of the chip for incident side, a part of incident light is transmitted from the light splitting hole and is separated, incident light it is another
Part is entered from the extinction area carries out photoelectric conversion in the absorbed layer.
2. chip according to claim 1, it is characterised in that: be equipped with photosensitive area in the top layer；The photosensitive area it is interior
End is connected with the absorbed layer, and the outer end of the photosensitive area is connected with the first electrode；The extinction area and the light
There is overlapping region in quick area.
3. chip according to claim 1, it is characterised in that: the light splitting hole is open simultaneously to the direction of the chip front side
Through the top layer.
4. chip according to claim 3, it is characterised in that: be additionally provided with buffering between the substrate and the absorbed layer
The inner end of layer, the light splitting hole is located at the buffer layer.
5. chip according to claim 1, it is characterised in that: the back side of the chip is equipped with second electrode, and described the
Two electrodes are connected with the substrate.
6. chip according to claim 1, it is characterised in that: be equipped in the extinction area into light anti-reflection film.
7. chip according to claim 4, it is characterised in that: the inner end in the light splitting hole is equipped with light transmission anti-reflection film.
8. chip according to claim 1, it is characterised in that: the back side of the chip be equipped with light anti-reflection film, it is described go out
The area of light anti-reflection film is greater than the light splitting hole along the cross-sectional area for being parallel to the chip surface direction.
9. chip according to claim 2, it is characterised in that: the photosensitive area edge is parallel to the chip surface direction
Cross section is arranged in a ring and around the light splitting hole, and the extinction area is in a ring and around light splitting hole setting, and described the
One electrode edge is parallel to the cross section in the chip surface direction in a ring and is arranged around the extinction area.
10. a kind of encapsulating structure of normal incidence photoelectric chip, it is characterised in that: including shell and normal incidence photoelectric chip,
The normal incidence photoelectric chip is any normal incidence photoelectric chip of claim 1-9；The chip is set to described
In shell, the shell is equipped with the first optical fiber interface and the second optical fiber interface；First optical fiber interface and second light
Fine interface is respectively arranged on the front and back of chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201822196276.8U CN209401636U (en) | 2018-12-25 | 2018-12-25 | Normal incidence photoelectric chip and its encapsulating structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201822196276.8U CN209401636U (en) | 2018-12-25 | 2018-12-25 | Normal incidence photoelectric chip and its encapsulating structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN209401636U true CN209401636U (en) | 2019-09-17 |
Family
ID=67896305
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201822196276.8U Active CN209401636U (en) | 2018-12-25 | 2018-12-25 | Normal incidence photoelectric chip and its encapsulating structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN209401636U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109801985A (en) * | 2018-12-25 | 2019-05-24 | 深圳市芯思杰智慧传感技术有限公司 | Normal incidence photoelectric chip and preparation method thereof |
-
2018
- 2018-12-25 CN CN201822196276.8U patent/CN209401636U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109801985A (en) * | 2018-12-25 | 2019-05-24 | 深圳市芯思杰智慧传感技术有限公司 | Normal incidence photoelectric chip and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN202735549U (en) | Integral receiving and transmitting device | |
| CN107765376B (en) | A kind of multichannel light-emitter assembly and its localization method | |
| CN106646773A (en) | Photoelectric conversion module | |
| CN204536604U (en) | Optical coupling device and optical module | |
| CN209401637U (en) | Normal incidence multiple-unit photoelectric chip and its encapsulating structure | |
| CN107976740A (en) | Optical fibre gyro Y waveguide integrated modulator chip and integrated approach | |
| CN209401636U (en) | Normal incidence photoelectric chip and its encapsulating structure | |
| CN202172408U (en) | Low cost SFP module with high-precision digital diagnosis function | |
| CN107515449B (en) | A kind of multi-channel high-speed rate optical module structure and processing method | |
| CN209401645U (en) | Back incident-type array photoelectric chip and its electric connection structure | |
| CN103392146A (en) | Light modulator | |
| CN209401634U (en) | Back incident-type coplanar electrodes photoelectric chip | |
| CN201508181U (en) | Optical transceiving component for optical fiber sensing | |
| CN104678517B (en) | A kind of integrated semiconductor optical device | |
| CN108072940A (en) | Optical module | |
| CN209401635U (en) | Back incident-type photoelectric chip | |
| CN102494797B (en) | Optical delay optical fiber temperature sensor | |
| CN209401639U (en) | Back incident-type coplanar electrodes multiple-unit chip | |
| CN207396784U (en) | Optical fibre gyro Y waveguide integrated modulator chip | |
| CN107580686A (en) | Photoelectric device | |
| CN209401638U (en) | Normal incidence coplanar electrodes photoelectric chip and its encapsulating structure | |
| CN103557936B (en) | Laser power monitor assembly and apply its laser emitting module, image intensifer | |
| US20160070063A1 (en) | Optical coupling device, photoelectric conversion device and optical communication device | |
| CN209401626U (en) | Normal incidence coplanar electrode array photoelectric chip and its encapsulating structure | |
| CN203660273U (en) | Bfm light detector assembly |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 518000 4th Floor, Building A5, Nanshan Zhiyuan, 1001 Xueyuan Avenue, Nanshan District, Shenzhen City, Guangdong Province Patentee after: Core technology (Shenzhen) Co., Ltd Address before: 518000 4th Floor, Building A5, Nanshan Zhiyuan, 1001 Xueyuan Avenue, Nanshan District, Shenzhen City, Guangdong Province Patentee before: SHENZHEN PHOGRAIN INTELLIGENT SENSING TECHNOLOGY CO., LTD. |
|
| CP01 | Change in the name or title of a patent holder |