CN209330080U - GaN HEMT protects circuit and equipment - Google Patents
GaN HEMT protects circuit and equipment Download PDFInfo
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- CN209330080U CN209330080U CN201822246945.8U CN201822246945U CN209330080U CN 209330080 U CN209330080 U CN 209330080U CN 201822246945 U CN201822246945 U CN 201822246945U CN 209330080 U CN209330080 U CN 209330080U
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Abstract
This application involves a kind of GaN HEMT protection circuits and equipment, wherein GaN HEMT protection circuit includes: that compress switch driving circuit, leakage of leakage compresses switch circuit and current detection circuit.Leak the first input end connection external power supply for the driving circuit that compresses switch, voltage-controlled signal processed is leaked in the access of second input terminal, the control terminal for the circuit that compresses switch is leaked in the connection of first output end, second output terminal leaks the input terminal for the circuit that compresses switch by current detection circuit connection, and the input terminal for the circuit that compresses switch is leaked in sampling end connection；Leak the drain electrode of the output end connection GaN HEMT for the circuit that compresses switch.Leakage compresses switch driving circuit based on voltage-controlled signal processed is leaked, and controls the Push And Release of GaN HEMT leakage pressure；Current detection circuit detection flows into the size for leaking the electric current for the circuit that compresses switch；It is excessive in electric current, when there is injury to GaN HEMT device, leaks the driving circuit driving that compresses switch and leak the circuit truncation that compresses switch, automatically cut off to drain and power, protect GaN HEMT device.
Description
Technical field
This application involves semiconductor protection field of circuit technology, protect circuit more particularly to a kind of GaN HEMT and set
It is standby.
Background technique
Gallium nitride (GaN) semiconductor material is with forbidden bandwidth is wide, electron drift velocity is high, disruptive field intensity is high, chemically
The advantages that matter is stablized, is the ideal material for preparing high frequency, high power device.Using GaN as the high electron mobility transistor of substrate
(HEMT, High Electron Mobility Transistor) is big with output power density, operating voltage is high and output resistance
Anti- high advantage, plays increasingly important role in wireless communications, is the core devices for wirelessly communicating amplifier.
During realization, inventor has found that at least there are the following problems: the drain current of GaN HEMT in traditional technology
Greatly, easily GaN HEMT device is damaged.
Utility model content
Based on this, it is necessary to for the problem that the drain current of GaN HEMT is big, easily GaN HEMT device is damaged,
A kind of GaN HEMT protection circuit and equipment are provided.
To achieve the goals above, on the one hand, the embodiment of the present application provides a kind of GaN HEMT protection circuit, comprising:
It leaks the driving circuit that compresses switch, leak compress switch circuit and current detection circuit.
Leakage compress switch driving circuit first input end for connecting external power supply, leakage compresses switch the second of driving circuit
Input terminal leaks voltage-controlled signal processed for accessing；The control for the circuit that compresses switch is leaked in the first output end connection for leaking the driving circuit that compresses switch
End, the second output terminal for leaking the driving circuit that compresses switch leak the input terminal for the circuit that compresses switch by current detection circuit connection；Leakage pressure
The input terminal for the circuit that compresses switch is leaked in the sampling end connection of switch driving circuit；The output end for the circuit that compresses switch is leaked for connecting GaN
The drain electrode of HEMT.
Current detection circuit includes sampling resistor in one of the embodiments,；The first end connection leakage pressure of sampling resistor
The input terminal for the circuit that compresses switch is leaked in the second output terminal of switch driving circuit, the second end connection of sampling resistor.
Current detection circuit further includes capacitor in one of the embodiments,；The first end connection sampling resistor of capacitor
The sampling end for the driving circuit that compresses switch is leaked in first end, the second end connection of capacitor.
Leakage compresses switch circuit as metal-oxide-semiconductor (Metal-Oxide-Semiconductor in one of the embodiments,
Field-Effect Transistor, metal-oxide semiconductor fieldeffect transistor) switching circuit；Leak the driving that compresses switch
Circuit is metal-oxide-semiconductor driving circuit.
It in one of the embodiments, further include ground switch circuit；The input terminal connection leakage of ground switch circuit presses off
The output end on powered-down road, the output end ground connection of ground switch circuit, the control terminal of ground switch circuit leak voltage-controlled system for accessing
Signal.
Ground switch circuit includes the first N-type metal-oxide-semiconductor in one of the embodiments,；The drain electrode of first N-type metal-oxide-semiconductor connects
The output end for leaking the circuit that compresses switch, the source electrode ground connection of the first N-type metal-oxide-semiconductor are connect, the grid of the first N-type metal-oxide-semiconductor is pressed for accessing leakage
Control signal.
It in one of the embodiments, further include leakage pressure control circuit；The input terminal of leakage pressure control circuit for connecting respectively
The grid of gate-voltage source and GaN HEMT is connect, it is defeated to leak press the output end connection leakage of control circuit to compress switch driving circuit second
Enter end.
Leakage pressure control circuit includes comparator, second resistance, 3rd resistor and NPN type three in one of the embodiments,
Pole pipe；The normal phase input end of comparator is used to be separately connected the grid of gate-voltage source and GaN HEMT；The reverse phase of comparator is defeated
Enter end for connecting negative voltage power supply end by second resistance, and is grounded by 3rd resistor；The positive power source terminal of comparator is used for
Positive voltage source end is connected, the negative power end of comparator is for connecting negative voltage power supply end；The output end of comparator connects NPN type
The base stage of triode；The output end of the collector connection leakage pressure control circuit of NPN type triode, the emitter of NPN type triode
Ground connection.The second input terminal for leaking the driving circuit that compresses switch is also used to connect positive voltage source end.
Or, leakage pressure control circuit includes comparator, second resistance, 3rd resistor and the second N-type metal-oxide-semiconductor；Comparator is just
Phase input terminal is for connecting gate-voltage source；The inverting input terminal of comparator is used to connect negative voltage power supply by second resistance
End, and be grounded by 3rd resistor；The positive power source terminal of comparator is used for connecting positive voltage source end, the negative power end of comparator
In connection negative voltage power supply end；The output end of comparator connects the grid of the second N-type metal-oxide-semiconductor；The drain electrode of second N-type metal-oxide-semiconductor connects
Connect the output end of leakage pressure control circuit, the source electrode ground connection of the second N-type metal-oxide-semiconductor.Leak the second input terminal of the driving circuit that compresses switch also
For connecting positive voltage source end.
Or, leakage pressure control circuit includes comparator, second resistance and 3rd resistor；The inverting input terminal of comparator is for connecting
Connect gate-voltage source；The normal phase input end of comparator is used to connect negative voltage power supply end by second resistance, and passes through third electricity
Resistance ground connection；The positive power source terminal of comparator is for connecting positive voltage source end, and the negative power end of comparator is for connecting negative electricity piezoelectricity
Source；The output end of the output end connection leakage pressure control circuit of comparator.
It in one of the embodiments, further include first capacitor group, the second capacitance group and third capacitance group；GaN HEMT
Grid pass through first capacitor be grounded；Positive voltage source end is grounded by the second capacitance group；Negative voltage power supply end passes through third electricity
Appearance group ground connection.
It in one of the embodiments, further include grid voltage generation circuit；The input terminal of grid voltage generation circuit is for connecting grid
Pole tension source, the output end of grid voltage generation circuit are separately connected the grid of the input terminal of leakage pressure control circuit, GaN HEMT.
It in one of the embodiments, further include drain electrode biasing filter circuit；The output end for leaking the circuit that compresses switch passes through leakage
Pole biases filter circuit ground connection.
On the other hand, the embodiment of the present application also provides a kind of equipment, including GaN HEMT, and such as above-mentioned GaN
HEMT protects circuit；GaN HEMT protects circuit connection GaN HEMT.
A technical solution in above-mentioned technical proposal is had the following advantages and beneficial effects:
GaN HEMT protects circuit, comprising: leaks the driving circuit that compresses switch, leaks compress switch circuit and current detection circuit.
The first input end for leaking the driving circuit that compresses switch is believed for connecting external power supply, the second input terminal for accessing the voltage-controlled system of leakage
Number, the control terminal for the circuit that compresses switch is leaked in the connection of the first output end, and second output terminal is compressed switch by current detection circuit connection leakage
The input terminal for the circuit that compresses switch is leaked in the input terminal of circuit, sampling end connection；The output end for the circuit that compresses switch is leaked for connecting GaN
The drain electrode of HEMT.The leakage driving circuit that compresses switch is based on leaking voltage-controlled signal processed, sends driving signal and compresses switch circuit to leakage；Leakage presses off
Powered-down roadbed controls the Push And Release of GaN HEMT leakage pressure in driving signal；Current detection circuit, which is connected to leakage and compresses switch, drives electricity
Road and leakage compress switch between circuit, for detecting the size for flowing into the electric current for leaking the circuit that compresses switch；It is excessive in electric current, it can be to GaN
When HEMT device damages, leaks the driving circuit driving that compresses switch and leak the circuit truncation that compresses switch, automatically cut off drain electrode and power, protection
GaN HEMT。
Detailed description of the invention
By being more particularly described for preferred embodiment of the present application shown in the drawings, the above and other mesh of the application
, feature and advantage will become more fully apparent.Identical appended drawing reference indicates identical part in all the attached drawings, and does not carve
Meaning draws attached drawing by actual size equal proportion scaling, it is preferred that emphasis is shows the purport of the application.
Fig. 1 is the first schematic diagram that GaN HEMT protects circuit in one embodiment；
Fig. 2 is the second schematic diagram that GaN HEMT protects circuit in one embodiment；
Fig. 3 is the third schematic diagram that GaN HEMT protects circuit in one embodiment；
Fig. 4 is the 4th schematic diagram that GaN HEMT protects circuit in one embodiment；
Fig. 5 is the 5th schematic diagram that GaN HEMT protects circuit in one embodiment；
Fig. 6 is the 6th schematic diagram that GaN HEMT protects circuit in one embodiment；
Fig. 7 is the 7th schematic diagram that GaN HEMT protects circuit in one embodiment；
Fig. 8 is the 8th schematic diagram that GaN HEMT protects circuit in one embodiment；
Fig. 9 is the 9th schematic diagram that GaN HEMT protects circuit in one embodiment；
Figure 10 is the structural schematic diagram of equipment in one embodiment.
Specific embodiment
The application in order to facilitate understanding is described more fully the application below with reference to relevant drawings.In attached drawing
Give the preferred embodiment of the application.But the application can realize in many different forms, however it is not limited to this paper institute
The embodiment of description.On the contrary, purpose of providing these embodiments is make it is more thorough and comprehensive to disclosure of this application.
It should be noted that it can be directly to separately when an element is considered as " connection " another element
One element and it is in combination be integrated, or may be simultaneously present centering elements.Term as used herein " output end ",
" input terminal ", " sampling end " and similar statement are for illustrative purposes only.
Unless otherwise defined, all technical and scientific terms used herein and the technical field for belonging to the application
The normally understood meaning of technical staff is identical.The term used in the description of the present application is intended merely to description tool herein
The purpose of the embodiment of body, it is not intended that in limitation the application.Term " and or " used herein includes one or more phases
Any and all combinations of the listed item of pass.
It is automatic protection GaN HEMT that traditional GaN HEMT biasing circuit, which cannot achieve overcurrent,.
For this purpose, the embodiment of the present application provides a kind of GaN HEMT protection circuit, as shown in FIG. 1, FIG. 1 is one embodiment
First schematic diagram of middle GaN HEMT protection circuit, comprising: leak the driving circuit that compresses switch, leak compress switch circuit and electricity
Current detection circuit.
Leakage compress switch driving circuit first input end for connecting external power supply, leakage compresses switch the second of driving circuit
Input terminal leaks voltage-controlled signal processed for accessing；The control for the circuit that compresses switch is leaked in the first output end connection for leaking the driving circuit that compresses switch
End, the second output terminal for leaking the driving circuit that compresses switch leak the input terminal for the circuit that compresses switch by current detection circuit connection；Leakage pressure
The input terminal for the circuit that compresses switch is leaked in the sampling end connection of switch driving circuit；The output end for the circuit that compresses switch is leaked for connecting GaN
The drain electrode of HEMT.
The first input end of driving circuit specifically, external power supply connection leakage compresses switch.Leak the driving circuit that compresses switch
Second output terminal leaks the input terminal for the circuit that compresses switch by current detection circuit connection, and sampling end, which also connects, leaks the circuit that compresses switch
Input terminal.Leak the drain electrode of the output end connection GaN HEMT for the circuit that compresses switch.The drain voltage signal that external power supply provides can be according to
It is secondary by first input end, second output terminal, current detection circuit and leakage compress switch circuit transmission to GaN HEMT drain electrode.
The control terminal for the circuit that compresses switch is leaked in the first output end connection for leaking the driving circuit that compresses switch；Leak voltage-controlled signal access processed
Leak the second input terminal of the driving circuit that compresses switch.It leaks the driving circuit that compresses switch and receives and leak voltage-controlled signal processed, be based on the voltage-controlled system of the leakage
Signal sends corresponding driving signal to the compress switch control terminal of circuit of leakage, control leakage compress switch circuit input terminal and output
Conducting or truncation between end.
Current detection circuit is connected to that leakage compresses switch driving circuit and leakage compresses switch between circuit, is additionally attached to leakage and compresses switch
Between the second output terminal and sampling end of driving circuit；Based on this, current detection circuit can be got by leaking the driving circuit that compresses switch
Collected current information, and be based on current information sends corresponding driving signal to the compress switch control terminal of circuit of leakage, controls
Leak the conducting and truncation between the input terminal and output end for the circuit that compresses switch.
It should be noted that leakage compresses switch, circuit can be used for directly controlling the open and close of GaN HEMT leakage pressure；It can be based on leakage pressure
It controls signal and leaks the driving circuit that compresses switch, realization is switched fast, and is conducive to the use of GaN HEMT on a communications device.
Leak the conducting or truncation that driving circuit can be used for that leakage is driven to compress switch circuit that compress switch.Specifically, the drive that compresses switch is leaked
It moves circuit and receives and leak voltage-controlled signal processed, for output drive signal to the control terminal for leaking the circuit that compresses switch, it is defeated that the circuit that compresses switch is leaked in control
Enter the on-off of end and output end；Leakage compresses switch driving circuit can also be based on the electric current letter that current detection circuit and sampling end are got
Breath, output drive signal leak the on-off of compress switch circuit input end and output end to the control terminal for leaking the circuit that compresses switch, control.?
Leakage compress switch circuit transmission overcurrent when, disconnect leakage in time and compress switch circuit, realize the protection to GaN HEMT.
It should be noted that leakage compresses switch, driving circuit can be mainly made of metal-oxide-semiconductor driver, can also be by comparator, fortune
The devices such as amplifier composition is calculated, can be also made of switching devices such as triode, metal-oxide-semiconductors；The specific of driving circuit that is, leakage compresses switch
Circuit structure can be designed according to actual needs, herein with no restrictions.
Current detection circuit can be used for detecting the size for flowing through the electric current for leaking the circuit input end that compresses switch, by collected electricity
Stream information can be transferred to leakage and compress switch driving circuit, carry out overcurrent protection.
Leaking the circuit that compresses switch can be made of devices such as switching tube, comparator or amplifiers, can be set according to actual needs
Meter, herein with no restrictions.
Leaking voltage-controlled signal processed can be used for controlling the driving signal for leaking the driving circuit that compresses switch, control GaN HEMT leakage pressure
Open and close.Specifically, leaking voltage-controlled signal processed can be pulse signal or continuous signal etc., that is, the voltage-controlled signal processed of leakage can be based on TDD
(Time Division Duplexing, time division duplex) standard signal or FDD (Frequency Division Duplexing,
Frequency division duplex) standard signal generation；Circuit provided by the embodiments of the present application is applicable to the equipment and FDD system of TDD system
Equipment.
External power supply can be used for providing the drain voltage signal of GaN HEMT.The drain voltage signal warp that external power supply provides
Cross leakage compress switch driving circuit, current detection circuit and leakage compress switch circuit transmission to GaN HEMT drain electrode.
The leakage driving circuit that compresses switch is based on leaking voltage-controlled signal processed, sends driving signal and compresses switch circuit to leakage；Leakage compresses switch
Circuit is based on driving signal, the Push And Release of control GaN HEMT leakage pressure.Current detection circuit is connected to leakage and compresses switch driving circuit
And leakage compresses switch between circuit, for detect flow into leakage compress switch circuit electric current size.It is excessive in electric current, it can be to GaN
When HEMT device damages, leakage compresses switch driving circuit according to the signal of current detection circuit, drives and leaks the circuit section that compresses switch
It is disconnected, drain electrode power supply is automatically cut off, GaN HEMT device is protected.
In one embodiment, as shown in Fig. 2, Fig. 2 is the second signal that GaN HEMT protects circuit in one embodiment
Property structure chart, current detection circuit includes sampling resistor；The first end connection leakage of sampling resistor compresses switch the second of driving circuit
The input terminal for the circuit that compresses switch is leaked in output end, the second end connection of sampling resistor.
Specifically, current detection circuit may include sampling resistor；The second output terminal for leaking the driving circuit that compresses switch passes through
The input terminal of sampling resistor connection.Leak the first end of the second output terminal connection sampling resistor for the driving circuit that compresses switch, sampling end
Connect the second end of sampling resistor.
Compress switch driving circuit and the sampling resistor for leaking the circuit that compresses switch are leaked it should be noted that being connected to, can detect stream
The size of current for entering the drain electrode of GaN HEMT is timely feedbacked in overcurrent and is compressed switch driving circuit to leakage.Leak the driving that compresses switch
Circuit can obtain sampling resistor acquisition current signal, by the first output end to leakage compress switch circuit control terminal output correspondence
Driving signal, can be driven in overcurrent leakage compress switch circuit truncation, protection GaN HEMT device it is not damaged.
In one embodiment, as shown in Fig. 2, current detection circuit further includes capacitor；The first end of capacitor connects sampling
The sampling end for the driving circuit that compresses switch is leaked in the first end of resistance, the second end connection of capacitor.
Specifically, capacitor is connected in parallel on the both ends of sampling resistor, it is connected to the second output terminal for leaking the driving circuit that compresses switch
Between sampling end.
In one embodiment, as shown in figure 3, Fig. 3 is the third signal that GaN HEMT protects circuit in one embodiment
Property structure chart, leakage compress switch circuit be metal-oxide-semiconductor switching circuit；Leakage compresses switch driving circuit as metal-oxide-semiconductor driving circuit.
Specifically, leakage compresses switch, circuit can be metal-oxide-semiconductor switching circuit, specifically, it may include N-type metal-oxide-semiconductor or p-type MOS
Pipe.Correspondingly, leaking the driving circuit that compresses switch can be metal-oxide-semiconductor driving circuit, specifically, it may include mosfet driver, such as
The drivers such as LTC7000, LTC7001, LTC7003 or LTC7004.
It should be noted that the leakage using metal-oxide-semiconductor as circuit compresses switch, based on the driving for leaking the driving circuit that compresses switch
Down, it can be achieved that GaN HEMT drain voltage switches at high speed.
In one embodiment, as shown in figure 3, further including ground switch circuit；The input terminal of ground switch circuit connects
The output end for the circuit that compresses switch is leaked, the output end ground connection of ground switch circuit, the control terminal of ground switch circuit is for accessing leakage
Voltage-controlled signal processed.
Specifically, GaN HEMT Drain control circuit further includes ground switch circuit.The switch of ground switch circuit is logical
Road is connected between ground terminal and the output end for leaking the circuit that compresses switch, and voltage-controlled signal processed is leaked in control terminal access；Earthing switch electricity
Road can be grounded end and leak the conducting and disconnection of the output end for the circuit that compresses switch based on voltage-controlled signal processed is leaked.
It should be noted that the default conditions of ground switch circuit can be conducting, when controlling the pass of GaN HEMT leakage pressure,
That is, Drain control circuit is in off position, the drain electrode of GaN HEMT device is connected to the ground by ground switch circuit, is based on
This, GaN HEMT device can greatly improve the anti-of GaN HEMT and burn energy from being burnt by abnormal conditions such as electrostatic, mistake power-up
Power improves robustness.And in control GaN HEMT leakage pressure when opening, that is, Drain control circuit is in running order, earthing switch
Circuit can be converted into the state disconnected, drain voltage signal is successively through leaking the driving that compresses switch according to voltage-controlled signal processed is leaked accordingly
Circuit leaks the circuit that compresses switch, and is transferred to the drain electrode of GaN HEMT.Specifically, ground switch circuit can be transistor switching circuit
Or metal-oxide-semiconductor switching circuit, it can be designed, be not particularly limited herein according to actual needs.
In one embodiment, ground switch circuit includes the first N-type metal-oxide-semiconductor；The drain electrode of first N-type metal-oxide-semiconductor connects leakage
Compress switch the output end of circuit, and the source electrode ground connection of the first N-type metal-oxide-semiconductor, the grid of the first N-type metal-oxide-semiconductor leaks voltage-controlled system for accessing
Signal.
Specifically, ground switch circuit can be realized based on the first N-type metal-oxide-semiconductor.The source electrode of first N-type metal-oxide-semiconductor is grounded,
The output end for the circuit that compresses switch is leaked in drain electrode connection；Meanwhile first the grid of N-type metal-oxide-semiconductor be based on leaking voltage-controlled signal processed, realize source electrode
On or off between drain electrode.When being connected between the output end and input terminal that the circuit that compresses switch is leaked in driving, voltage-controlled system is leaked
Signal can control the cut-off of the first N-type metal-oxide-semiconductor；When ending between the output end and input terminal that the circuit that compresses switch is leaked in control, it can drive
Dynamic first N-type metal-oxide-semiconductor saturation conduction.It is remote small since the drain-source resistance after the first N-type metal-oxide-semiconductor saturation conduction is close to zero ohms
Energy storage in the grid resistance of GaN HEMT, the circuit of GaN HEMT drain electrode connection can be bled off moment.
GaN HTMT is depletion device, UGSCut-in voltage (UGS(th): Gate Threshold Voltage) it is negative electricity
Pressure so needing first to provide grid voltage when powering on, then carries out leakage pressure biasing；It needs to be first turned off leakage pressure when lower electricity, then turns off grid voltage.When
Grid, leakage pressure upper and lower electricity sequencing is any when being unsatisfactory for, GaN HEMT there is the danger burnt by high current, to lead
Cause to be failed with the wireless telecom equipment of GaN HEMT.
In one embodiment, as shown in figure 3, further including leakage pressure control circuit；The input terminal of leakage pressure control circuit is used for
It is separately connected the grid of gate-voltage source and GaN HEMT, the driving circuit that compresses switch is leaked in the output end connection of leakage pressure control circuit
Second input terminal.
Specifically, GaN HEMT Drain control circuit further includes leakage pressure control circuit；The input terminal of leakage pressure control circuit
Gate-voltage source is connected, the second input terminal of the driving circuit that compresses switch is leaked in output end connection.
It should be noted that gate-voltage source is used to provide grid voltage to GaN HEMT, meanwhile, it can also be by grid voltage
It is transferred to and leaks pressure control circuit, so that leakage pressure control circuit compresses switch to leakage, driving circuit transmission is corresponding to leak voltage-controlled signal processed,
It realizes and the control that pressure applies timing is leaked to GaN HEMT.
Leakage pressure control circuit receives the grid voltage that gate-voltage source provides, and is based on grid voltage, compresses switch drive to leakage
Dynamic circuit output is corresponding to leak voltage-controlled signal processed, and the conducting and truncation for the circuit that compresses switch are leaked in control.Based on this, leaked in GaN HEMT
It presses in loading procedure, can be realized GaN HEMT and first add grid voltage, rear plus leakage pressure electrifying timing sequence requirement.
In one embodiment, leakage pressure control circuit includes comparator.The first input end of comparator is for connecting grid
Voltage source, the second input terminal connect default power supply, and the second input terminal of the driving circuit that compresses switch is leaked in output end connection.
Specifically, the input terminal of comparator is respectively connected to gate-voltage source and default power supply, by comparing grid voltage
The voltage in source and default power supply can be exported the voltage-controlled signal processed of corresponding leakage by output end and be compressed switch driving circuit to leakage.Wherein, in advance
If the voltage of power supply can be configured according to actual needs, it is not specifically limited herein；Specifically, can be joined according to the configuration of circuit
Number is configured, and configuration parameter includes that the port of default plant-grid connection comparator, the voltage of gate-voltage source, and leakage compress switch
Control voltage of the second input terminal of driving circuit etc..
In one embodiment, as shown in figure 4, Fig. 4 is the 4th signal that GaN HEMT protects circuit in one embodiment
Property structure chart, leakage pressure control circuit include comparator, second resistance, 3rd resistor and NPN type triode；The positive of comparator is defeated
Enter to hold the grid for being separately connected gate-voltage source and GaN HEMT；The inverting input terminal of comparator is for passing through second resistance
Negative voltage power supply end is connected, and is grounded by 3rd resistor；The positive power source terminal of comparator compares for connecting positive voltage source end
The negative power end of device is for connecting negative voltage power supply end；The base stage of the output end connection NPN type triode of comparator；NPN type three
The output end of the collector connection leakage pressure control circuit of pole pipe, the emitter ground connection of NPN type triode.Leak the driving circuit that compresses switch
The second input terminal be also used to connect positive voltage source end.
Specifically, leakage pressure control circuit can be mainly by comparator, second resistance, 3rd resistor and NPN type triode group
At.The inverting input terminal of comparator connects negative voltage power supply end by second resistance, and is grounded by 3rd resistor；Based on negative electricity
Piezoelectricity source, second resistance and 3rd resistor, the threshold value of settable comparator, and for the grid with access normal phase input end
Voltage source signal is made comparisons, it is ensured that GaN HEMT just driving leakage pressure conducting after being applied with grid voltage.The output end of comparator connects
The base stage for connecing NPN type triode controls the on-off of NPN type triode.The collector of NPN type triode is separately connected positive electricity piezoelectricity
Source, the second input terminal for leaking the driving circuit that compresses switch, emitter ground connection.
In a specific example, the voltage V of gate-voltage source offerGSComparator in leakage pressure control circuit carries out
Compare, works as VGSWhen being arranged to normal value (that is, lower than threshold value), comparator exports low level, by converting after NPN triode
At high level, realizes the level for leaking the second input terminal of the driving circuit that compresses switch from low level to high level and overturn.
In one embodiment, leakage pressure control circuit includes comparator, second resistance, 3rd resistor and the second N-type MOS
Pipe；The normal phase input end of comparator is for connecting gate-voltage source；The inverting input terminal of comparator is used to connect by second resistance
Negative voltage power supply end is connect, and is grounded by 3rd resistor；The positive power source terminal of comparator is for connecting positive voltage source end, comparator
Negative power end for connecting negative voltage power supply end；The output end of comparator connects the grid of the second N-type metal-oxide-semiconductor；Second N-type
The output end of the drain electrode connection leakage pressure control circuit of metal-oxide-semiconductor, the source electrode ground connection of the second N-type metal-oxide-semiconductor.Leak the driving circuit that compresses switch
Second input terminal is also used to connect positive voltage source end.
In one embodiment, leakage pressure control circuit includes comparator, second resistance and 3rd resistor；The reverse phase of comparator
Input terminal is for connecting gate-voltage source；The normal phase input end of comparator is used to connect negative voltage power supply end by second resistance,
And it is grounded by 3rd resistor；For connecting positive voltage source end, the negative power end of comparator is used for the positive power source terminal of comparator
Connect negative voltage power supply end；The output end of the output end connection leakage pressure control circuit of comparator.
Specifically, the voltage V that gate-voltage source providesGSAlso the inverting input terminal of comparator, then, threshold value be can access
VTHConnect the normal phase input end of comparator.At this point, being not necessarily to NPN type triode, the output end of comparator is separately connected positive electricity piezoelectricity
Source, the second input terminal for leaking the driving circuit that compresses switch.
It should be noted that leakage pressure control circuit can be also made of devices such as comparator, switching tubes, herein with no restrictions.
In one embodiment, as shown in figure 5, Fig. 5 is the 5th signal that GaN HEMT protects circuit in one embodiment
Property structure chart, further includes first capacitor group, the second capacitance group and third capacitance group；The grid of GaN HEMT passes through first capacitor
Ground connection；Positive voltage source end is grounded by the second capacitance group；Negative voltage power supply end is grounded by third capacitance group.
Specifically, at the grid of connection GaN HEMT, positive voltage source end and negative voltage power supply end be accordingly arranged
Suitable ground capacity group；Each capacitance group can be used for energy storage, when drain voltage value is fallen to 0V, provide to the grid of GaN HEMT
Each circuit of voltage still works normally, the maintenance supply normal grid voltage of GaN HEMT, thus grid voltage under leakage presses, is rear under realization first
Lower electricity timing.
It should be noted that energy storage of the first capacitor group for the grid of GaN HEMT；Second capacitance group is used for positive voltage
The energy storage of power end；Third capacitance group is used for the energy storage at negative voltage power supply end.The specific design of capacitance group and capacitor's capacity
Selection can be determined according to the demand of actual circuit.The electric discharge constant source of capacitance group in grid voltage circuit is greater than GaN
The electric discharge constant of capacitor in HEMT drain circuit can make the grid voltage of GaN HEMT that can still keep normal work before complete power down is pressed in leakage
Make, realizes that GaN HEMT first closes leakage pressure, the rear power-off sequential requirement for closing grid voltage.
First capacitor group can also form grid voltage with peripheral circuit and bias filter circuit, and grid voltage biasing filter circuit can connect
Between gate-voltage source and the grid of GaN HEMT.
In one embodiment, as shown in figure 5, further including grid voltage generation circuit；The input terminal of grid voltage generation circuit is used for
Gate-voltage source is connected, the output end of grid voltage generation circuit is separately connected the grid of the input terminal of leakage pressure control circuit, GaN HEMT
Pole.
Specifically, GaN HEMT Drain control circuit may also include grid voltage generation circuit.The input of grid voltage generation circuit
End connection gate-voltage source, output end are separately connected the grid of the input terminal of leakage pressure control circuit, GaN HEMT.
It should be noted that grid voltage generation circuit can be used for accessing external power supply, that is, provide the power supply of gate-voltage source；
Grid voltage generation circuit is based on external power supply signal, is adjusted, converts to signal, exports suitable GaN HEMT gate pole tension.
Currently, the normal work grid voltage of market mainstream GaN HEMT is generally higher than -5V；Grid voltage generation circuit can be used for gate-voltage source
The grid voltage of GaN HEMT needs is converted to, and is transferred to the grid of GaN HEMT.
In one embodiment, grid voltage generation circuit is inverter cricuit, grid voltage temperature compensation circuit, subtraction circuit or analog-to-digital conversion
Circuit.
Specifically, grid voltage generation circuit form realize multiplicity, such as can by D/A converting circuit, inverter cricuit or
Subtraction circuit is realized.By using temperature sensors such as thermosensitive circuit or transistors, grid voltage temperature compensation electricity can also be constituted
Road.
In one embodiment, as shown in figure 5, further including drain electrode biasing filter circuit；Leak the output end for the circuit that compresses switch
Pass through drain electrode biasing filter circuit ground connection.
Specifically, GaN HEMT Drain control circuit may also include drain electrode biasing filter circuit；Leak the circuit that compresses switch
The drain electrode of output end and GaN HEMT can pass through drain electrode biasing filter circuit ground connection.
It should be noted that drain electrode biasing filter circuit can be made of capacitance group etc., it is mainly used for filtering.
In one embodiment, as shown in fig. 6, Fig. 6 is the 6th signal that GaN HEMT protects circuit in one embodiment
Property structure chart, GaN HEMT Drain control circuit may also include input filter circuit, positive voltage source circuit and negative electricity piezoelectricity
Source circuit.The input terminal of input filter circuit connects positive electricity piezoelectricity for connecting external power supply, the output end of input filter circuit
The input terminal of source circuit；The output end of positive voltage source circuit is separately connected positive voltage source end and negative voltage power supply circuit
Input terminal；The output end of negative voltage power supply circuit connects negative voltage power supply end.
Specifically, GaN HEMT Drain control circuit may also include input filter circuit, positive voltage source circuit and
Negative voltage power supply circuit.The input terminal of input filter circuit connects external power supply, and output end connects the defeated of positive voltage source circuit
Enter end, the voltage supply circuit that can be positive power supply.The output end of positive voltage source circuit is separately connected positive voltage source end and bears
The input terminal of voltage supply circuit can power for positive voltage source end and negative voltage power supply circuit.Negative voltage power supply circuit
Output end connects negative voltage power supply end, can power for negative voltage power supply end.
In one embodiment, as shown in fig. 6, the operating voltage of GaN HEMT is generally+48V or 28V；Grid voltage generates electricity
Road, leakage pressure control circuit, negative voltage power supply circuit are many times operate on the more low-voltage such as+5V or+3.3V, so, it is external
Power supply VEXTAfter input power filter circuit, is exported all the way to positive voltage source circuit, negative voltage power supply circuit and generated respectively
Low positive voltage V+, negative voltage V- are used for internal circuit.
After grid voltage generation circuit exports normal grid voltage supply GaN HEMT, the voltage-controlled circuit control processed of triggering leakage leaks the drive that compresses switch
Dynamic circuit makes to leak the circuit conducting that compresses switch, thus external power supply VEXTSuccessively by input power filter circuit, current detecting electricity
Road, leakage compress switch driving circuit, N-type metal-oxide-semiconductor and drain electrode biasing filter circuit be loaded onto GaN HEMT.
Since the working power of grid voltage generation circuit may be from external power supply VEXTIt (is also GaN HEMT drain electrode working power
VDD), and voltage value is much smaller than VEXTVoltage value；Suitable capacitive energy storage is placed at grid voltage generation circuit power supply, can be realized
VDDWhen voltage value falls to 0V, grid voltage generation circuit is still worked normally, and the supply normal grid voltage of GaN HEMT is maintained, to realize elder generation
The lower electric timing of lower leakage pressure, rear lower grid voltage.
In GaN HEMT load after the biasing of leakage pressure, when current detection circuit detects that drain current is excessive, it is possible to burn
When GaN HEMT (that is, when being more than predetermined threshold value), the driving circuit closing output that compresses switch is leaked in triggering, so that it is powered-down to press off leakage
Road truncation, the leakage of GaN HEMT are broken out, and realize overcurrent automatic protection GaN HEMT device.
In one embodiment, as shown in fig. 7, Fig. 7 is the 7th signal that GaN HEMT protects circuit in one embodiment
Property structure chart, positive voltage source circuit includes power conversion chip U2；Leaking the driving circuit that compresses switch includes mosfet driver U3；
Leaking the circuit that compresses switch includes N-type metal-oxide-semiconductor U4；Current detection circuit includes sampling resistor Rsense；Leakage pressure control circuit include than
Compared with device U5 and NPN triode K2；Negative voltage power supply circuit includes power conversion chip U6；Grid voltage generation circuit includes that reverse phase is put
Big device U7.
External power supply VEXTAfter electrolytic capacitor, ceramic condenser filtering, it is connected to U2, the positive voltage V of generation+5V all the way
+；+ 5V output is connected to U6, the negative voltage V- of generation -5V.External power supply VEXTAfter input power filter circuit, another way
It is connected to U3, after Rsense current sampling resistor, is connected to the drain electrode of U4.When the pressure drop on sampling resistor Rsense >=
When 30mV, the end TGDN level is pulled low to the end TS level at once by U4, makes the gate source voltage 0V for leaking the U4 that compresses switch, so that U4 be made to close
Disconnected, GaN HEMT leakage pressure is disconnected, and realizes the automatic protection functions of overcurrent.
Externally input positive pressure Vgs grid voltage is converted to negative pressure V by the inverting amplifier that U7 is constitutedGSAfterwards, directly pass through grid
Pole biasing filter circuit is sent to GaN HEMT.Meanwhile VGSCompared with the comparator that U5 is constituted, work as VGSIt is arranged to normal value (i.e.
Lower than threshold value) when, comparator exports low level, by being converted into high level after K2, realizes the level at the end INP of U3 from low
Level to high level overturn, thus allow U3 the end TGUP and the end TS voltage difference (i.e. the gate source voltage of U4) be 12V, lead U4
It is logical, to pressure is leaked in GaN HEMT load, realize that GaN HEMT first adds grid voltage, rear plus leakage pressure sequence of power switching requirement.It should pay attention to
, VGSIt may also connect to the reverse side of U5, threshold value VTHConnect in-phase end.At this point, K2 need to only be removed, U5 comparator is defeated
Outlet directly connects the end INP of U3.
Suitable C11, C16, C18, C23 are selected, the electric discharge constant of circuit where making these capacitors is much larger than drain electrode biasing
The electric discharge constant of capacitor in filter circuit realizes that grid voltage generation circuit can still keep working normally before complete power down is pressed in leakage, from
And reaches GaN HEMT and first close leakage pressure, the rear power-off sequential requirement for closing grid voltage.
In one embodiment, as shown in figure 8, Fig. 8 is the 8th signal that GaN HEMT protects circuit in one embodiment
Property structure chart, GaN HEMT voltage be generally+48V or 28V, grid voltage generation circuit, leakage pressure control circuit, negative voltage power supply circuit
Operating voltage be often the more low-voltage such as+5V or+3.3V.External power supply VEXTAfter input power filter circuit, export all the way
Low positive voltage V+ is generated respectively to positive voltage source circuit, negative voltage power supply circuit, and negative voltage V- is used for internal circuit.
Leakage compresses switch circuit can be based on NMOS tube composition, and wherein the drain electrode of NMOS tube 1 is connected to input power filter circuit,
Source electrode is connected to drain electrode biasing filter circuit, and grid is connected to leakage and compresses switch driving circuit；NMOS tube 2 (i.e. ground switch circuit)
Drain electrode be connected with 1 source electrode of NMOS tube, source electrode ground connection, grid be connected to leakage pressure control circuit.Preferably, NMOS tube 1, which is selected, is
Enhanced field-effect tube, NMOS tube 2 select depletion field effect transistor.Based on this, circuit is in off position, GaN HEMT leakage
Pole can also be connected to the ground by NMOS tube 2, thus make GaN HEMT can in order to avoid by electrostatic, accidentally power-up etc. abnormal conditions burn,
The burn-out resistance of GaN HEMT is greatly improved, robustness is improved.
Upon power-up, when grid voltage generation circuit exports normal grid voltage, leakage pressure control circuit makes to leak in the circuit that compresses switch
NMOS tube 2 is ended, while being triggered leakage and being compressed switch driving circuit, and leakage is made to compress switch 1 saturation conduction of NMOS tube in circuit.External electrical
Source VEXTBy input power filter circuit, overcurrent protection electric current, leak the circuit NMOS tube 1 that compresses switch, drain electrode biasing filter circuit
It is loaded onto GaN HEMT, realizes the electric sequence for first loading grid voltage, rear load leakage pressure.
Instantly when electric, once grid voltage generation circuit output grid voltage is greater than normal grid voltage, then leaking pressure control circuit presses leakage
Switch driving circuit closes output, makes to leak the NMOS tube 1 in the circuit that compresses switch and ends, makes external power supply VEXTWith VDDConnect between node
Connect disconnection.Meanwhile it leaking and control circuit is pressed to make to leak 2 saturation conduction of NMOS tube in the circuit that compresses switch.Due to 2 saturation conduction of NMOS tube
After drain-source resistance close to zero ohms, much smaller than the grid resistance of GaN HEMT, capacitor in drain electrode biasing filter circuit or
Inductive energy storage can be bled off moment, that is, when GaN HEMT gate pole tension is just over normal voltage, and GaN HEMT drains
It is connected to the ground, drain discharge off.To realize first lower leakage pressure, the lower electric timing of rear lower grid voltage.
Leakage pressure biasing in GaN HEMT load, when overcurrent protection circuit detects that drain current is excessive, it is possible to burn
When GaN HEMT, namely when being more than predetermined threshold value, the triggering leakage driving circuit that compresses switch closes output, and leakage is made to compress switch in circuit
NMOS tube 1 switch to end by saturation conduction, thus make GaN HEMT leakage break out, realize overcurrent automatic protection GaN HEMT
Device.
In one embodiment, as shown in figure 9, Fig. 9 is the 9th signal that GaN HEMT protects circuit in one embodiment
Property structure chart, positive voltage source circuit includes power conversion chip U2；Leaking the driving circuit that compresses switch includes mosfet driver U3；
Leaking the circuit that compresses switch includes Q1NMOS pipe, and the first N-type metal-oxide-semiconductor in ground switch circuit is Q2, sampling resistor Rsense；Leakage
Pressing control circuit includes comparator U5 and the second N-type metal-oxide-semiconductor Q3；Negative voltage power supply circuit includes power conversion chip U6；Grid
Pressing generation circuit includes inverting amplifier U7.
External power supply VEXTAfter electrolytic capacitor, ceramic condenser filtering, it is connected to the V+ positive voltage of U2 generation+5V all the way,
+ 5V the voltage output of U2 to U6 generation -5V V- negative voltage.External power supply VEXTAfter input power filter circuit, another way
It is connected to U3, after Rsense current sampling resistor, is connected to the drain electrode of Q1NMOS pipe.Pressure drop on sampling resistor Rsense
When >=30mV, TDGN pin level is pulled low to TS pin level at once by Q1, makes the gate source voltage for leaking the Q1NMOS pipe 1 that compresses switch
0V, so that Q1NMOS pipe 1 be made to end, GaN HEMT leakage pressure is disconnected, and realizes the automatic protection functions of overcurrent.
Externally input positive pressure VgsGrid voltage is converted to negative pressure V by the inverting amplifier that U7 is constitutedGSAfterwards, directly pass through grid
Pole biasing networks are sent to GaN HEMT.V simultaneouslyGSCompared with the comparator that U5 is constituted, work as VGSIt is (namely low to be arranged to normal value
In threshold value VTH) when, comparator exports low level, by being converted into high level after Q3NMOS pipe, realizes U3INP pin level
It overturns from low level to high level, so that U3TGUP, TS pin voltage poor (namely gate source voltage of Q1) be allowed to be 12V, makes
Q1NMOS pipe saturation conduction；Since the low level of the U5 comparator output constituted is negative pressure V-, Q2NMOS pipe is cut-off shape at this time
State, to realize that GaN HEMT first adds grid voltage, rear plus leakage pressure sequence of power switching requirement in GaN HEMT leakage pressure load.
Instantly it when electric or abnormal power-down, if grid voltage generation circuit still exports normal grid voltage, leaks the circuit that compresses switch and still maintains
1 saturation conduction of Q1NMOS pipe, 2 off state of Q2NMOS pipe.Once grid voltage generation circuit, which exports grid voltage, is higher than normal grid voltage, U5 structure
At comparator export high level rapidly, Q3NMOS pipe responds saturation conduction, jumps to U3INP pin level from high level low
Level, U3TGUP pin circuit are not pulled down to that TS pin voltage is poor namely the gate source voltage of Q1 is 0V, and Q1NMOS pipe is cut rapidly
Only.The high level output for the comparator that U5 is constituted makes Q2NMOS pipe saturation conduction.Low drain-source resistance after Q2 conducting can make to leak
C19, C20, C21, C22 capacitor in pole biasing filter circuit discharges rapidly.Due to the capacitor in drain electrode biasing filter circuit
Discharge constant, and the electric discharge of the RC network formed much larger than C23, C24 capacitor in the gate bias filter circuit by GaN HEMT is normal
Number, so still there is negative pressure feeding in GaN HEMT gate pole before GaN HEMT drain electrode level becomes zero.To realize GaN HEMT
First close leakage pressure, the rear power-off sequential requirement for closing grid voltage.
The embodiment of the present application is based on current detection circuit, can monitor the drain current size for flowing to GaN HEMT；Also, it leaks
Compress switch driving circuit and current detection circuit cooperation, it is excessive in drain current, reach be possible to damage GaN HMET device when,
It leaks the driving circuit that compresses switch and automatically cuts off drain electrode power supply, to achieve the purpose that protect GaN HEMT, improve making for GaN HEMT
Use reliability.
Further, the open and close of GaN HEMT leakage pressure can be controlled using metal-oxide-semiconductor, it can be achieved that the high speed that leakage compresses switch is cut
It changes, meanwhile, loss and the circuit cost of drain power switch are reduced, the reliability and efficiency of circuit are improved.Also, it also provides
The function that upper, power-off sequential automatically controls；When GaN HEMT is powered on, grid voltage is first loaded, rear load leakage pressure；At GaN HEMT
When electric, leakage pressure is first disconnected, disconnects grid voltage afterwards.
On the other hand, the embodiment of the present application also provides a kind of equipment, and as shown in Figure 10, Figure 10 is to set in one embodiment
Standby structural schematic diagram, including GaN HEMT, and as above-mentioned GaN HEMT protects circuit；GaN HEMT protects circuit connection
GaN HEMT。
Specifically, equipment includes GaN HEMT, and the GaN HEMT Drain control circuit for connecting GaN HEMT.
The embodiment of the present application closes leakage in overcurrent using current detection circuit and the cooperation for leaking the driving circuit that compresses switch
It compresses switch, biasing is pressed in the automatic leakage for disconnecting GaN HEMT, is realized overcurrent automatic protection GaN HEMT, can be greatly improved use
The product reliability of GaN HEMT.
Each technical characteristic of embodiment described above can be combined arbitrarily, for simplicity of description, not to above-mentioned reality
It applies all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, all should be considered as described in this specification.
The several embodiments of the application above described embodiment only expresses, the description thereof is more specific and detailed, but simultaneously
The limitation to the application range therefore cannot be interpreted as.It should be pointed out that for those of ordinary skill in the art,
Without departing from the concept of this application, various modifications and improvements can be made, these belong to the protection model of the application
It encloses.Therefore, the scope of protection shall be subject to the appended claims by the application.
Claims (10)
1. a kind of GaN HEMT protects circuit characterized by comprising leakage compress switch driving circuit, leakage compress switch circuit and
Current detection circuit；
The leakage compress switch driving circuit first input end for connecting external power supply, the leakage compresses switch the of driving circuit
Two input terminals leak voltage-controlled signal processed for accessing；The the first output end connection leakage for leaking the driving circuit that compresses switch compresses switch
The control terminal of circuit, the second output terminal for leaking the driving circuit that compresses switch connect the leakage pressure by the current detection circuit
The input terminal of switching circuit；The sampling end for leaking the driving circuit that compresses switch connects the input terminal for leaking the circuit that compresses switch；
The output end for leaking the circuit that compresses switch is used to connect the drain electrode of the GaN HEMT.
2. GaN HEMT according to claim 1 protects circuit, which is characterized in that the current detection circuit includes sampling
Resistance；
The first end of the sampling resistor connects the leakage and compresses switch the second output terminal of driving circuit, and the of the sampling resistor
Two ends connect the input terminal for leaking the circuit that compresses switch.
3. GaN HEMT according to claim 2 protects circuit, which is characterized in that the current detection circuit further includes electricity
Hold；
The first end of the capacitor connects the first end of the sampling resistor, and the second end connection leakage of the capacitor compresses switch
The sampling end of driving circuit.
4. GaN HEMT according to claim 1 protects circuit, which is characterized in that the leakage compresses switch circuit as metal-oxide-semiconductor
Switching circuit；The leakage compresses switch driving circuit as metal-oxide-semiconductor driving circuit.
5. GaN HEMT according to claim 1 protects circuit, which is characterized in that further include ground switch circuit；
The input terminal of the ground switch circuit connects the leakage and compresses switch the output end of circuit, the ground switch circuit it is defeated
Outlet ground connection, the control terminal of the ground switch circuit is for accessing the voltage-controlled signal processed of leakage.
6. GaN HEMT according to claim 5 protects circuit, which is characterized in that the ground switch circuit includes first
N-type metal-oxide-semiconductor；
The drain electrode connection output end for leaking the circuit that compresses switch of the first N-type metal-oxide-semiconductor, the source electrode of the first N-type metal-oxide-semiconductor
Ground connection, the grid of the first N-type metal-oxide-semiconductor is for accessing the voltage-controlled signal processed of leakage.
7. protecting circuit to GaN HEMT described in 6 any one according to claim 1, which is characterized in that further include that leakage is voltage-controlled
Circuit processed；
The input terminal of the leakage pressure control circuit is used to be separately connected the grid of gate-voltage source and the GaN HEMT, the leakage
The output end of pressure control circuit connects second input terminal for leaking the driving circuit that compresses switch.
8. GaN HEMT according to claim 7 protects circuit, which is characterized in that the leakage pressure control circuit includes comparing
Device, second resistance, 3rd resistor and NPN type triode；The normal phase input end of the comparator is for being separately connected the grid
The grid of voltage source and the GaN HEMT；The inverting input terminal of the comparator is used to connect negative electricity by the second resistance
Piezoelectricity source, and be grounded by the 3rd resistor；The positive power source terminal of the comparator is described for connecting positive voltage source end
The negative power end of comparator is for connecting the negative voltage power supply end；The output end of the comparator connects three pole of NPN type
The base stage of pipe；The collector of the NPN type triode connects the output end of the leakage pressure control circuit, the NPN type triode
Emitter ground connection；Second input terminal for leaking the driving circuit that compresses switch is also used to connect the positive voltage source end；
Or, the leakage pressure control circuit includes comparator, second resistance, 3rd resistor and the second N-type metal-oxide-semiconductor；The comparator
Normal phase input end for connecting the gate-voltage source；The inverting input terminal of the comparator is for passing through the second resistance
Negative voltage power supply end is connected, and is grounded by the 3rd resistor；The positive power source terminal of the comparator is for connecting positive electricity piezoelectricity
Source, the negative power end of the comparator is for connecting the negative voltage power supply end；Described in the output end connection of the comparator
The grid of second N-type metal-oxide-semiconductor；The output end of the drain electrode connection of the second N-type metal-oxide-semiconductor leakage pressure control circuit, described the
The source electrode of two N-type MOS pipes is grounded；Second input terminal for leaking the driving circuit that compresses switch is also used to connect the positive electricity piezoelectricity
Source；
Or, leakage pressure control circuit includes comparator, second resistance and 3rd resistor；The inverting input terminal of the comparator is for connecting
Connect the gate-voltage source；The normal phase input end of the comparator is used to connect negative voltage power supply end by the second resistance,
And it is grounded by the 3rd resistor；The positive power source terminal of the comparator is used to connect positive voltage source end, the comparator
Negative power end is for connecting the negative voltage power supply end；The output end of the comparator connects the output of the leakage pressure control circuit
End.
9. GaN HEMT according to claim 8 protects circuit, which is characterized in that further include first capacitor group, the second electricity
Appearance group, third capacitance group, grid voltage generation circuit and drain electrode biasing filter circuit；
The grid of the GaN HEMT is grounded by the first capacitor；The positive voltage source end passes through second capacitance group
Ground connection；The negative voltage power supply end is grounded by the third capacitance group；The input terminal of the grid voltage generation circuit is for connecting
The gate-voltage source, the output end of the grid voltage generation circuit are separately connected the input terminal, described of the leakage pressure control circuit
The grid of GaN HEMT；The output end for leaking the circuit that compresses switch biases filter circuit ground connection by the drain electrode.
10. a kind of equipment, which is characterized in that including GaN HEMT and GaN as claimed in any one of claims 1 to 9
HEMT protects circuit；
GaN HEMT described in the GaN HEMT protection circuit connection.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201822246945.8U CN209330080U (en) | 2018-12-28 | 2018-12-28 | GaN HEMT protects circuit and equipment |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201822246945.8U CN209330080U (en) | 2018-12-28 | 2018-12-28 | GaN HEMT protects circuit and equipment |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111130515A (en) * | 2019-12-23 | 2020-05-08 | 广东美的白色家电技术创新中心有限公司 | Multi-input protection circuit, input control circuit and electronic equipment |
| CN111478690A (en) * | 2020-04-15 | 2020-07-31 | 贵州航天天马机电科技有限公司 | High-reliability electronic switch circuit and control method |
| CN111600558A (en) * | 2020-06-05 | 2020-08-28 | 深圳国人无线通信有限公司 | Power supply control device |
| CN112688645A (en) * | 2019-10-17 | 2021-04-20 | 上海诺基亚贝尔股份有限公司 | GaN power amplifier protection circuit |
-
2018
- 2018-12-28 CN CN201822246945.8U patent/CN209330080U/en active Active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112688645A (en) * | 2019-10-17 | 2021-04-20 | 上海诺基亚贝尔股份有限公司 | GaN power amplifier protection circuit |
| CN112688645B (en) * | 2019-10-17 | 2024-03-15 | 上海诺基亚贝尔股份有限公司 | GaN power amplifier protection circuit |
| CN111130515A (en) * | 2019-12-23 | 2020-05-08 | 广东美的白色家电技术创新中心有限公司 | Multi-input protection circuit, input control circuit and electronic equipment |
| CN111478690A (en) * | 2020-04-15 | 2020-07-31 | 贵州航天天马机电科技有限公司 | High-reliability electronic switch circuit and control method |
| CN111600558A (en) * | 2020-06-05 | 2020-08-28 | 深圳国人无线通信有限公司 | Power supply control device |
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Effective date of registration: 20200110 Address after: 510663 Shenzhou Road 10, Guangzhou Science City, Guangzhou economic and Technological Development Zone, Guangzhou, Guangdong Patentee after: Jingxin Communication System (China) Co., Ltd. Address before: 510663 Shenzhou Road 10, Guangzhou Science City, Guangzhou economic and Technological Development Zone, Guangzhou, Guangdong Co-patentee before: Jingxin Communication System (Guangzhou) Co., Ltd. Patentee before: Jingxin Communication System (China) Co., Ltd. Co-patentee before: Jingxin Communication Technology (Guangzhou) Co., Ltd. Co-patentee before: TIANJIN COMBA TELECOM SYSTEMS CO., LTD. |
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Address after: 510663 Shenzhou Road 10, Guangzhou Science City, Guangzhou economic and Technological Development Zone, Guangzhou, Guangdong Patentee after: Jingxin Network System Co.,Ltd. Address before: 510663 Shenzhou Road 10, Guangzhou Science City, Guangzhou economic and Technological Development Zone, Guangzhou, Guangdong Patentee before: Comba Telecom System (China) Ltd. |
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