CN111600558A - Power supply control device - Google Patents
Power supply control device Download PDFInfo
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- CN111600558A CN111600558A CN202010504095.6A CN202010504095A CN111600558A CN 111600558 A CN111600558 A CN 111600558A CN 202010504095 A CN202010504095 A CN 202010504095A CN 111600558 A CN111600558 A CN 111600558A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
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Abstract
The invention relates to a power supply control device, which comprises a power supply and a GaN power amplifier, and further comprises an MCU, a controller connected with the MCU, a drain power switch and a power supply conversion circuit, wherein the controller is connected with the drain power switch and used for turning on or off the drain power switch, the controller is connected with the grid electrode of the GaN power amplifier and used for outputting negative voltage to the grid electrode of the GaN power amplifier so as to enable the GaN power amplifier to correctly bias the negative voltage of the grid electrode of the GaN power amplifier, the power supply is respectively connected with the drain power switch and the power supply conversion circuit, the drain power switch is connected with the drain electrode of the GaN power amplifier, the power supply conversion circuit is connected with the negative power supply of the controller, and the power supply is used for supplying power to the drain electrode of the GaN power amplifier and the negative power supply of the controller. The power-on time sequence of the GaN power amplifier can be met.
Description
[ technical field ] A method for producing a semiconductor device
The invention relates to the technical field of radio frequency, in particular to a power supply control device of a GaN (gallium nitride) power amplifier.
[ background of the invention ]
The 5G era requires a large number of GaN (gallium nitride) power amplifiers. When the GaN power amplifier is electrified, the negative voltage of the grid electrode of the GaN power amplifier must be biased, and the positive voltage of the drain electrode of the GaN power amplifier can be biased after the negative voltage of the grid electrode is stable. Based on the special power-on sequence, a reasonable power supply control circuit is designed for the GaN power amplifier, and the stable and reliable power supply control circuit is the premise of ensuring normal bias and normal work of the GaN device.
Therefore, it is desirable to provide a power supply control apparatus that can satisfy the power-on timing of the GaN power amplifier.
[ summary of the invention ]
The present invention is directed to overcome the above-mentioned deficiencies, and to provide a power supply control device that can satisfy the power-on sequence of a GaN power amplifier.
The invention provides a power supply control device, which comprises a power supply and a GaN power amplifier, and further comprises an MCU, a controller connected with the MCU, a drain power switch and a power supply conversion circuit, wherein the controller is connected with the drain power switch and used for turning on or off the drain power switch, the controller is connected with the grid electrode of the GaN power amplifier and used for outputting negative voltage to the grid electrode of the GaN power amplifier so as to enable the GaN power amplifier to correctly bias the negative voltage of the grid electrode of the GaN power amplifier, the power supply is respectively connected with the drain power switch and the power supply conversion circuit, the drain power switch is connected with the drain electrode of the GaN power amplifier, the power supply conversion circuit is connected with the negative power supply of the controller, and the power supply is used for supplying power to the drain electrode of the GaN power amplifier and the negative power supply of the controller.
Further, the controller is further configured to turn off the drain power switch when the power supply control device is powered on, so that the power supply cannot supply power to the drain of the GaN power amplifier; the controller is further used for detecting whether the output voltage is correct negative voltage after the negative voltage is output to the grid electrode of the GaN power amplifier, if the output voltage is correct voltage, the detection result is fed back to the MCU, and the MCU outputs an opening instruction to the controller according to the detection result fed back by the controller so as to open the drain power switch through the controller.
The GaN power amplifier further comprises a drain current detection module connected between the drain of the GaN power amplifier and a drain power switch in series, and the drain current detection module is connected with the controller and used for converting current input through the drain power switch into a voltage signal and outputting the voltage signal to the controller.
Further, the MCU is configured to read a voltage signal output to the controller by the drain current detection module, convert the read voltage signal into a current value, and compare the converted current value with a preset threshold current value to determine whether the GaN power amplifier is operating normally, and if the detection result is greater than the preset threshold current value, output a close instruction to the controller to close the drain power switch through the controller, so as to protect the GaN power amplifier from damage.
Further, the GaN power amplifier further comprises a temperature detection module connected with the controller, and the temperature detection module is used for detecting the working environment temperature of the GaN power amplifier and outputting the detection result to the controller.
Further, the MCU is configured to read a detection result output from the temperature detection module to the controller, compare the detection result with a preset threshold temperature value to determine whether the GaN power amplifier is working normally, and output a close instruction to the controller to close the drain power switch through the controller if the detection result is greater than the preset threshold temperature value, so as to protect the GaN power amplifier from damage.
Further, the output of the power supply comprises a first output power supply and a second output power supply, the first output power supply is connected with the drain power switch to supply power to the drain of the GaN power amplifier through the drain power switch, and the second output power supply is connected with the power conversion circuit to supply power to the negative power supply of the controller through the power conversion circuit.
Furthermore, the power supply conversion circuit comprises a Vpp-to-Vcc circuit and a Vcc-to-Vss circuit which are connected in series; the power supply is connected with the Vpp-to-Vcc circuit, a diode is connected between the Vpp-to-Vcc circuit and the Vpp-to-Vss circuit in series, the Vcc-to-Vss circuit is connected with a negative power supply of the controller, the power supply conversion circuit further comprises a first capacitor, a second capacitor and a third capacitor, the first capacitor is connected between the diode and the Vpp-to-Vcc circuit and grounded, the second capacitor is connected between the Vpp-to-Vcc circuit and the Vcc-to-Vss circuit and grounded, and the third capacitor is connected between the Vcc-to-Vss circuit and the negative power supply of the controller and grounded.
Further, the grid voltage filter circuit is connected between the controller and the grid electrode of the GaN power amplifier in series; the grid of the GaN power amplifier comprises a Main PA grid and a Peak PA grid, and the grid voltage filter circuit comprises a Main PA grid voltage filter circuit and a Peak PA grid voltage filter circuit, wherein the Main PA grid voltage filter circuit is connected between the controller and the Main PA grid in series, and the Peak PA grid voltage filter circuit is connected between the controller and the Peak PA grid in series.
Further, the power amplifier further comprises a drain power supply filter circuit connected between the drain current detection module and the drain of the GaN power amplifier in series.
According to the power-on control method and device, the power-on control of the GaN power amplifier can be realized through the MCU, the controller connected with the MCU, the drain electrode power switch and the power conversion circuit, the power-on time sequence of the GaN power amplifier can be met, the control is simple and reliable, the cost is low, and the market requirements are met.
[ description of the drawings ]
Fig. 1 is a block diagram illustrating a power supply control apparatus according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a drain power switch of the power control apparatus shown in FIG. 1;
fig. 3 is a block diagram schematically illustrating the MCU of the power supply control apparatus shown in fig. 1 connected to a plurality of controllers.
[ detailed description ] embodiments
The invention is further described below with reference to the figures and examples.
Referring to fig. 1, the power supply control apparatus provided by the present invention includes an MCU (micro controller Unit) 11, a controller 12, a drain power switch 13, a GaN (gallium nitride) power amplifier 14, a power supply, and a power supply conversion circuit 20.
The MCU11 is used to control the operation of the controller 12. The controller 12 is an ADC/DAC (analog-to-digital conversion/digital-to-analog conversion) controller, and the controller 12 is connected to the MCU11 through an SPI (Serial Peripheral Interface) bus.
The controller 12 is connected to the drain power switch 13 for turning on or off the drain power switch 13 upon receiving an on or off command output from the MCU 11. The controller 12 is connected to the gate of the GaN power amplifier 14 for outputting a negative voltage to the gate of the GaN power amplifier 14 after it is set to a negative voltage output by the MCU11 for the GaN power amplifier 14 to properly bias the negative voltage of its gate.
The power supply Vpp is connected to the drain power switch 13 and the power supply conversion circuit 20, respectively. The drain power switch 13 is connected to the drain of the GaN power amplifier 14, the power conversion circuit 20 is connected to the negative power supply of the controller 12, and the power conversion circuit 20 converts the voltage output from the power supply Vpp into a voltage suitable for the negative power supply of the controller 12. The power supply Vpp is used to power the drain of the GaN power amplifier 14, the negative power supply of the controller 12. When the drain power switch 13 is turned on, the power Vpp is supplied to the drain of the GaN power amplifier 14 through the drain power switch 13.
In this embodiment, the controller 12 is further configured to turn off the drain power switch 13 when the power supply control device is powered on, so that power is not supplied to the drain of the GaN power amplifier 14 first when the power supply control device is powered on, and therefore, no voltage is present at the drain of the GaN power amplifier 14, which protects the power supply of the GaN power amplifier 14. The controller 12 is further configured to detect whether the output of the GaN power amplifier 14 is a correct negative voltage after outputting the negative voltage to the gate thereof, and if the output of the GaN power amplifier 14 is the correct negative voltage, feed back the detection result to the MCU11, where the MCU11 outputs an open instruction to the controller 12 according to the detection result fed back by the controller 12, so as to open the drain power switch 13 through the controller 12, thereby further protecting the power supply of the GaN power amplifier 14, and when the drain power switch 13 is opened, the power supply can supply power to the drain of the GaN power amplifier 14 through the drain power switch 13.
In other embodiments, after the controller 12 outputs the negative voltage to the gate of the GaN power amplifier 14, the MCU11 outputs an open command to the controller 12 to open the drain power switch 13 via the controller 12, so that the power supply can supply power to the drain of the GaN power amplifier 14 via the drain power switch 13 after the drain power switch 13 is opened.
In this embodiment, the controller 12 outputs a negative voltage to the gate of the GaN power amplifier 14 through an I/O (Input/Output) port thereon. The GaN power amplifier 14 is a Doherty (Doherty) structure GaN power amplifier. The power supply Vpp is a 48V (volt) power supply.
Further, the output of the power supply Vpp includes a first output power supply connected to the drain power supply switch 13 to supply power to the drain of the GaN power amplifier 14 through the drain power supply switch 13 and a second output power supply connected to the power supply conversion circuit 20 to supply power to the negative power supply of the controller 12 through the power supply conversion circuit 20.
Further, the power amplifier power supply control of the present invention further includes a gate voltage filter circuit connected in series between the controller 12 and the gate of the GaN power amplifier 14, wherein the gate voltage filter circuit is configured to filter the negative voltage output by the controller 12 to the gate of the GaN power amplifier 14.
Preferably, the gates of GaN power amplifier 14 include a Main PA (Main power amplifier) gate and a Peak PA (Peak power amplifier) gate, and the gate voltage filter circuit includes a Main PA gate voltage filter circuit 18 connected in series between controller 12 and the Main PA gate and a Peak PA gate voltage filter circuit 19 connected in series between controller 12 and the Peak PA gate. The Main PA gate voltage filter circuit 18 is used to filter the negative voltage output by the controller 12 to the Main PA gate of the GaN power amplifier 14. Peak PA gate voltage filter circuit 19 is used to filter the negative voltage that controller 12 outputs to the Peak PA gate of GaN power amplifier 14.
The working principle of the invention is as follows: when the power supply control device is powered on, the second output power supply of the power supply Vpp supplies power to the negative power supply of the controller 12, and because the GaN power amplifier 14 does not correctly bias the negative voltage of the grid electrode of the GaN power amplifier, the controller 12 closes the drain power switch 13, so that the first output power supply of the power supply Vpp cannot supply power to the drain electrode of the GaN power amplifier 14, the drain electrode of the GaN power amplifier 14 has no voltage, and the power supply control device plays a role in protecting the power supply of the GaN power amplifier 14; the MCU11 is powered on initially and communicates with the controller 12 via the SPI bus. The controller 12 is set by the MCU11 to a negative voltage output and sets the output negative voltage value to a negative voltage value at which the GaN power amplifier 14 correctly biases its gate. The controller 12 outputs negative voltage to the Main PA gate and the Peak PA gate of the GaN power amplifier 14, and the negative voltage is respectively filtered by the Main PA gate voltage filter circuit 18 and the Peak PA gate voltage filter circuit 19 and then is added to the Main PA gate and the Peak PA gate of the GaN power amplifier 14, so that the GaN power amplifier 14 correctly biases the negative voltage of the gates; the controller 12 outputs a negative voltage to the Main PA gate and the Peak PA gate of the GaN power amplifier 14, and then detects whether the output is a correct negative voltage, if the output is a correct negative voltage, the detection result is fed back to the MCU11 through the SPI bus, the MCU11 outputs an open command to the controller 12 through the SPI bus according to the detection result fed back by the controller 12, the controller 12 opens the drain power switch 13, and the first output power of the power Vpp can supply power to the drain of the GaN power amplifier 14 through the drain power switch 13, so that the GaN power amplifier 14 can normally operate after the power up is completed.
According to the invention, through the MCU, the controller connected with the MCU, the drain power switch and the power conversion circuit 20, the power-on control of the GaN power amplifier can be realized, the power-on time sequence of the GaN power amplifier can be met, the control is simple and reliable, the cost is low, and the market demand is met.
The power supply control device of the present invention further includes a drain current detection module 15 connected in series between the drain of the GaN power amplifier 14 and the drain power switch 13. The power supply 48V of the first output power supply of the power supply Vpp is input to the drain of the GaN power amplifier 14 through the drain power switch 13 and the drain current detection module 15 to supply power to the drain of the GaN power amplifier 14. The drain current detection module 15 is connected to the controller 12 for converting a current input through the drain power switch 13 into a voltage signal and outputting the voltage signal to the controller 12. The MCU11 is configured to read a voltage signal output to the controller 12 from the drain current detection module 15, convert the read voltage signal into a current value, and compare the converted current value with a preset threshold current value to determine whether the GaN power amplifier 14 is working normally, and if the detection result is greater than the preset threshold current value, output a close instruction to the controller 12 to close the drain power switch 13 through the controller 12, so as to protect the GaN power amplifier 14 from being damaged and perform an overcurrent protection function on the GaN power amplifier 14. The preset threshold current value can be set according to actual conditions.
Further, the power supply control device further includes a drain power filter circuit 16 connected in series between the drain current detection module 15 and the drain of the GaN power amplifier 14, and configured to filter the power input to the drain of the GaN power amplifier 14 through the drain current detection module 15. The drain power filter circuit 16 is, for example, a capacitor or the like.
Preferably, the power conversion circuit 20 includes a Vpp (48V power) to Vcc (5V power) circuit 21 and a Vcc to Vss (-5V power) circuit 22 connected in series. In this embodiment, the second output power of the power supply Vpp is connected to the Vpp-to-Vcc circuit 21, and a diode is connected in series between the two. The Vcc to Vss circuit 22 is connected to the negative power supply of the controller 12, and the power conversion circuit 20 further includes a first capacitor C1, a second capacitor C2, and a third capacitor C3. A first capacitor C1 is connected between the diode and the Vpp to Vcc circuit 21 and to ground, thereby forming a first set of capacitive filtering circuits. A second capacitor C2 is connected between Vpp-to-Vcc circuit 21 and Vcc-to-Vss circuit 22 and to ground, thereby forming a second set of capacitive filtering circuits. A third capacitor C3 is connected between Vcc to Vss circuit 22 and the negative supply of controller 12 and to ground, thereby forming a third set of capacitive filtering circuits. In this embodiment, the power Vpp 48V output by the second output power source is isolated by a diode, filtered by the first capacitor C1, and input to the Vpp-to-Vcc circuit 21, and the power Vpp 48V is converted into the power Vcc5V, filtered by the second capacitor C2, input to the Vcc-to-Vss circuit 22, and converted into the power Vss-5V from the power Vcc5V, and filtered by the third capacitor C3 to supply power to the negative power source of the controller 12.
When the power supply control device of the present invention is suddenly powered down, the power consumption of the negative power supply applied to the controller 12 is particularly small due to the large amount of power stored in the first capacitor C1, the second capacitor C2, and the third capacitor C3 of the power conversion circuit 20, so the output of the Vcc-to-Vss circuit 22 is slowly reduced after the sudden power down. The output end of the GaN power amplifier 14 is connected to a load (in the radio frequency circuit, the output of the GaN power amplifier 14 cannot be idle to avoid excessive signal reflection to burn out the GaN power amplifier 14), and the load value is small (50 ohms), when the power supply control device of the present invention is suddenly powered down, the electric quantity stored in the drain power filter circuit 16, such as a capacitor, will be quickly consumed on the load, so the controller 12 outputs a negative voltage to the gate of the GaN power amplifier 14 and still maintains a normal output for a period of time, and can ensure that the voltage is slowly reduced to zero after the drain voltage of the GaN power amplifier 14 is reduced to zero, thereby satisfying the power down timing of the GaN power amplifier 14 and protecting the GaN power amplifier 14 from being damaged.
Further, the power amplifier power supply control of the present invention further includes a temperature detection module 17 connected to the controller 12, where the temperature detection module 17 is configured to detect an ambient temperature of the GaN power amplifier 14 and output a detection result to the controller 12. The MCU11 is configured to read a detection result output from the temperature detection module 17 to the controller 12, compare the detection result with a preset threshold temperature value to determine whether the GaN power amplifier 14 is working normally, and output a close instruction to the controller 12 to close the drain power switch 13 via the controller 12 if the detection result is greater than the preset threshold temperature value, so as to protect the GaN power amplifier 14 from being damaged and protect the GaN power amplifier 14 from over-temperature. The preset threshold temperature value can be set according to the actual situation.
The MCU11 is further configured to calculate a temperature compensation value of the GaN power amplifier 14 according to the detection result output from the temperature detection module 17 to the controller 12 and a pre-stored temperature compensation value, and output the temperature compensation value to a DA (digital-to-analog) channel of the GaN power amplifier 14 to implement temperature compensation on the GaN power amplifier 14, so that the GaN power amplifier 14 can operate in an optimal state at any temperature.
In this embodiment, the controller 12 can support outputting 8 negative voltages, so that one controller 12 can support four GaN power amplifiers 14, and the number of the drain power supply filter circuits 16, the drain current detection module 15, the Main PA gate voltage filter circuit 18, and the Peak PA gate voltage filter circuit 19 corresponds to the number of the GaN power amplifiers 14. By implementing the invention, the power-on and power-off of a plurality of GaN power amplifiers 14 can be controlled by using one controller 12, thereby simplifying the structure and reducing the cost.
In the present embodiment, as shown in fig. 2, the drain power switch 13 is composed of a P-channel MOS (Metal-Oxide-Semiconductor Field-Effect Transistor) Transistor and two voltage dividing resistors R. The G pole (gate) of the P-channel MOS transistor is connected to the controller 12 and the first output power supply of the power supply through two voltage dividing resistors R, the S pole (source) of the P-channel MOS transistor is connected to the first output power supply of the power supply, and the D pole (drain) of the P-channel MOS transistor is connected to the drain current detection module 15. The controller 12 outputs a high level to the G pole of the P-channel MOS transistor to turn off the drain power switch 13, and outputs a low level to the G pole of the P-channel MOS transistor to turn on the drain power switch 13.
In other embodiments, as shown in fig. 3, the MCU11 may be connected to multiple controllers 12 through SPI bus at the same time, so as to control the power supply of more GaN power amplifiers 14 at the same time, thereby meeting the usage requirement.
The above examples merely represent preferred embodiments of the present invention, which are described in more detail and detail, but are not to be construed as limiting the scope of the present invention. It should be noted that, for a person skilled in the art, several variations and modifications, such as combinations of different features in various embodiments, may be made without departing from the spirit of the invention, and these are within the scope of the invention.
Claims (10)
1. A power supply control device comprises a power supply and a GaN power amplifier, and is characterized in that: still include MCU, with controller, drain electrode switch and the power conversion circuit that MCU connects, the controller with drain electrode switch connects and is used for opening or closing drain electrode switch, the controller with GaN power amplifier's grid is connected and is used for the negative voltage of the grid output negative voltage so that GaN power amplifier correctly biases its grid to GaN power amplifier, the power respectively with drain electrode switch, power conversion circuit connect, drain electrode switch with GaN power amplifier's drain electrode, power conversion circuit with the negative power supply of controller is connected, the power is used for GaN power amplifier's drain electrode, the negative power supply of controller.
2. The power supply control device according to claim 1, characterized in that: the controller is further used for turning off the drain power switch when the power supply control device is powered on, so that the power supply cannot supply power to the drain of the GaN power amplifier; the controller is further used for detecting whether the output voltage is correct negative voltage after the negative voltage is output to the grid electrode of the GaN power amplifier, if the output voltage is correct voltage, the detection result is fed back to the MCU, and the MCU outputs an opening instruction to the controller according to the detection result fed back by the controller so as to open the drain power switch through the controller.
3. The power supply control device according to claim 1, characterized in that: the GaN power amplifier further comprises a drain current detection module connected between the drain of the GaN power amplifier and the drain power switch in series, and the drain current detection module is connected with the controller and used for converting current input through the drain power switch into a voltage signal and outputting the voltage signal to the controller.
4. The power supply control device according to claim 3, characterized in that: the MCU is used for reading a voltage signal output to the controller by the drain current detection module, converting the read voltage signal into a current value, comparing the converted current value with a preset threshold current value to judge whether the GaN power amplifier works normally, and if the detection result is larger than the preset threshold current value, outputting a closing instruction to the controller to close the drain power switch through the controller, so that the GaN power amplifier can be protected from being damaged.
5. The power supply control device according to claim 1, characterized in that: the temperature detection module is used for detecting the working environment temperature of the GaN power amplifier and outputting the detection result to the controller.
6. The power supply control device according to claim 5, characterized in that: the MCU is used for reading a detection result output to the controller by the temperature detection module and comparing the detection result with a preset threshold temperature value to judge whether the GaN power amplifier works normally, and if the detection result is larger than the preset threshold temperature value, a closing instruction is output to the controller to close the drain power switch through the controller, so that the GaN power amplifier can be protected from being damaged.
7. The power supply control device according to claim 1, characterized in that: the output of the power supply comprises a first output power supply and a second output power supply, the first output power supply is connected with the drain power switch to supply power to the drain of the GaN power amplifier through the drain power switch, and the second output power supply is connected with the power supply conversion circuit to supply power to the negative power supply of the controller through the power supply conversion circuit.
8. The power supply control device according to claim 1, characterized in that: the power supply conversion circuit comprises a Vpp-to-Vcc circuit and a Vcc-to-Vss circuit which are connected in series; the power supply is connected with the Vpp-to-Vcc circuit, a diode is connected between the Vpp-to-Vcc circuit and the Vpp-to-Vss circuit in series, the Vcc-to-Vss circuit is connected with a negative power supply of the controller, the power supply conversion circuit further comprises a first capacitor, a second capacitor and a third capacitor, the first capacitor is connected between the diode and the Vpp-to-Vcc circuit and grounded, the second capacitor is connected between the Vpp-to-Vcc circuit and the Vcc-to-Vss circuit and grounded, and the third capacitor is connected between the Vcc-to-Vss circuit and the negative power supply of the controller and grounded.
9. The power supply control device according to claim 1, characterized in that: the grid voltage filter circuit is connected between the controller and the grid electrode of the GaN power amplifier in series; the grid of the GaN power amplifier comprises a Main PA grid and a Peak PA grid, and the grid voltage filter circuit comprises a Main PA grid voltage filter circuit and a Peak PA grid voltage filter circuit, wherein the Main PA grid voltage filter circuit is connected between the controller and the Main PA grid in series, and the Peak PA grid voltage filter circuit is connected between the controller and the Peak PA grid in series.
10. The power supply control device according to claim 3, characterized in that: the GaN power amplifier further comprises a drain power supply filter circuit connected between the drain current detection module and the drain electrode of the GaN power amplifier in series.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010504095.6A CN111600558A (en) | 2020-06-05 | 2020-06-05 | Power supply control device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010504095.6A CN111600558A (en) | 2020-06-05 | 2020-06-05 | Power supply control device |
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| CN111600558A true CN111600558A (en) | 2020-08-28 |
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| CN202010504095.6A Pending CN111600558A (en) | 2020-06-05 | 2020-06-05 | Power supply control device |
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| CN112532184A (en) * | 2020-12-03 | 2021-03-19 | 深圳国人无线通信有限公司 | Power amplifier grid voltage switching device |
| CN114047797A (en) * | 2021-11-10 | 2022-02-15 | 福州物联网开放实验室有限公司 | 5G power amplifier power supply circuit and method |
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| US20140191807A1 (en) * | 2013-01-08 | 2014-07-10 | Aviat U.S., Inc. | Systems and methods for biasing amplifiers with adaptive closed loop control |
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