CN209328905U - 一种改良型贴片式三极管 - Google Patents

一种改良型贴片式三极管 Download PDF

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CN209328905U
CN209328905U CN201920094592.6U CN201920094592U CN209328905U CN 209328905 U CN209328905 U CN 209328905U CN 201920094592 U CN201920094592 U CN 201920094592U CN 209328905 U CN209328905 U CN 209328905U
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彭根元
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Semtech Semiconductor Technology Dongguan Co Ltd
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Zhongzhi Semiconductor Technology (dongguan) Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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Abstract

本实用新型提供了一种改良型贴片式三极管，包括塑封外壳，所述塑封外壳内依次设有基极导电板、集电极导电板、发射极导电板，所述集电极导电板上侧还设有芯片，所述芯片与所述基极导电板、集电极导电板、发射极导电板之间均连接有导线，所述基极导电板、集电极导电板、发射极导电板一端均连接有引脚，所述引脚包括第一倾斜部、连接在所述第一倾斜部下端的第一弯折部、连接在所述第一弯折部上端的第二倾斜部、连接在所述第二倾斜部上端的第二弯折部、连接在所述第二弯折部下端的第三倾斜部、以及连接在所述第三倾斜部下端的接触部。本实用新型提供的贴片式三极管，结构简单，电接触性能良好。

Description

一种改良型贴片式三极管
技术领域
本实用新型涉及三极管技术领域，具体涉及一种改良型贴片式三极管。
背景技术
三极管，全称应为半导体三极管，也称双极型晶体管、晶体三极管，是一种控制电流的半导体器件，其作用是把微弱信号放大成幅度值较大的电信号，具有电流放大作用，是电子电路的核心元件。三极管是在一块半导体基片上制作两个相距很近的PN结，两个PN结把整块半导体分成三部分，中间部分是基区，两侧部分是发射区和集电区，排列方式有PNP和NPN两种，按封装形式划分有贴片三极管和插件三极管。
现有技术的贴片三极管，三个引脚为直角结构或弧形结构，安装时，其接触性能较差，容易出现接触不良的现象，存在较大的缺陷。
实用新型内容
针对以上问题，本实用新型提供一种改良型贴片式三极管，结构简单，电接触性能良好。
为实现上述目的，本实用新型通过以下技术方案来解决：
一种改良型贴片式三极管，包括塑封外壳，所述塑封外壳内依次设有基极导电板、集电极导电板、发射极导电板，所述集电极导电板上侧还设有芯片，所述芯片与所述基极导电板、集电极导电板、发射极导电板之间均连接有导线，所述基极导电板、集电极导电板、发射极导电板一端均连接有引脚，所述引脚包括第一倾斜部、连接在所述第一倾斜部下端的第一弯折部、连接在所述第一弯折部上端的第二倾斜部、连接在所述第二倾斜部上端的第二弯折部、连接在所述第二弯折部下端的第三倾斜部、以及连接在所述第三倾斜部下端的接触部。
具体的，所述接触部上还设有安装孔。
具体的，所述集电极导电板与所述芯片之间还夹设有一个导热绝缘板。
具体的，所述基极导电板远离所述集电极导电板一侧连接有第一散热铝条。
具体的，所述集电极导电板一侧面连接有第二散热铝条。
具体的，所述发射极导电板远离所述集电极导电板一侧连接有第三散热铝条。
本实用新型的有益效果是：
第一、本实用新型的贴片式三极管，对三个引脚进行改进，将其设计成波浪形结构，且引脚下端的第一弯折部也可以作为接触端，使得引脚具有两个接触点，提高电接触性能，保证了电路的稳定性，且波浪形结构的引脚使得三极管具有优异的弹性，同时提高了三极管的抗震性能；
第二、在基极导电板、集电极导电板、发射极导电板的外侧面均连接有散热铝条，散热铝条的导热性能优异，能够提高三极管的散热性能。
附图说明
图1为本实用新型的一种改良型贴片式三极管的结构示意图。
图2为本实用新型的一种改良型贴片式三极管的内部结构图。
图3为本实用新型中引脚的结构示意图。
附图标记为：塑封外壳1、基极导电板2、集电极导电板3、发射极导电板4、芯片5、导线6、引脚7、第一倾斜部71、第一弯折部72、第二倾斜部73、第二弯折部74、第三倾斜部75、接触部76、安装孔761、导热绝缘板8、第一散热铝条91、第二散热铝条92、第三散热铝条93。
具体实施方式
下面结合实施例和附图对本实用新型作进一步详细的描述，但本实用新型的实施方式不限于此。
如图1-3所示：
一种改良型贴片式三极管，包括塑封外壳1，塑封外壳1内依次设有基极导电板2、集电极导电板3、发射极导电板4，集电极导电板3上侧还设有芯片5，芯片5与基极导电板2、集电极导电板3、发射极导电板4之间均连接有导线6，基极导电板2、集电极导电板3、发射极导电板4一端均连接有引脚7，引脚7包括第一倾斜部71、连接在第一倾斜部71下端的第一弯折部72、连接在第一弯折部72上端的第二倾斜部7373、连接在第二倾斜部73上端的第二弯折部74、连接在第二弯折部74下端的第三倾斜部75、以及连接在第三倾斜部75下端的接触部76，引脚7整体呈波浪状结构，第一弯折部72也可以作为接触端，使得引脚7具有两个接触点，提高电接触性能，保证了电路的稳定性，且波浪形结构的引脚7使得三极管具有优异的弹性，同时提高了三极管的抗震性能。
优选地，为了能够将引脚7固定在电路板上，接触部76上还设有安装孔761，安装孔761内可穿过螺栓等零件。
优选地，为了使集电极导电板3与芯片5两者的相对面相互绝缘，集电极导电板3与芯片5之间还夹设有一个导热绝缘板8。
优选地，为了更好地将基极导电板2的热量导出塑封外壳1外，基极导电板2远离集电极导电板3一侧连接有第一散热铝条91。
优选地，为了更好地将集电极导电板3的热量导出塑封外壳1外，集电极导电板3一侧面连接有第二散热铝条92。
优选地，为了更好地将发射极导电板4的热量导出塑封外壳1外，发射极导电板4远离集电极导电板3一侧连接有第三散热铝条93。
以上实施例仅表达了本实用新型的一种实施方式，其描述较为具体和详细，但并不能因此而理解为对本实用新型专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本实用新型构思的前提下，还可以做出若干变形和改进，这些都属于本实用新型的保护范围。因此，本实用新型专利的保护范围应以所附权利要求为准。

Claims (6)

1.一种改良型贴片式三极管，其特征在于，包括塑封外壳(1)，所述塑封外壳(1)内依次设有基极导电板(2)、集电极导电板(3)、发射极导电板(4)，所述集电极导电板(3)上侧还设有芯片(5)，所述芯片(5)与所述基极导电板(2)、集电极导电板(3)、发射极导电板(4)之间均连接有导线(6)，所述基极导电板(2)、集电极导电板(3)、发射极导电板(4)一端均连接有引脚(7)，所述引脚(7)包括第一倾斜部(71)、连接在所述第一倾斜部(71)下端的第一弯折部(72)、连接在所述第一弯折部(72)上端的第二倾斜部(73)(73)、连接在所述第二倾斜部(73)上端的第二弯折部(74)、连接在所述第二弯折部(74)下端的第三倾斜部(75)、以及连接在所述第三倾斜部(75)下端的接触部(76)。
2.根据权利要求1所述的一种改良型贴片式三极管，其特征在于，所述接触部(76)上还设有安装孔(761)。
3.根据权利要求1所述的一种改良型贴片式三极管，其特征在于，所述集电极导电板(3)与所述芯片(5)之间还夹设有一个导热绝缘板(8)。
4.根据权利要求1所述的一种改良型贴片式三极管，其特征在于，所述基极导电板(2)远离所述集电极导电板(3)一侧连接有第一散热铝条(91)。
5.根据权利要求1所述的一种改良型贴片式三极管，其特征在于，所述集电极导电板(3)一侧面连接有第二散热铝条(92)。
6.根据权利要求1所述的一种改良型贴片式三极管，其特征在于，所述发射极导电板(4)远离所述集电极导电板(3)一侧连接有第三散热铝条(93)。
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