CN209313808U - A kind of current protective device based on semiconductor module driving - Google Patents
A kind of current protective device based on semiconductor module driving Download PDFInfo
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- CN209313808U CN209313808U CN201821878881.7U CN201821878881U CN209313808U CN 209313808 U CN209313808 U CN 209313808U CN 201821878881 U CN201821878881 U CN 201821878881U CN 209313808 U CN209313808 U CN 209313808U
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 74
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Abstract
The utility model embodiment provides a kind of current protective device based on semiconductor module driving, which includes: magnetic induction coil, signal conditioning circuit, logic circuit and semiconductor module driving circuit；Magnetic induction coil is connected with signal conditioning circuit, for incuding the current changing rate signal of semiconductor power half-bridge module, and exports induced voltage signal to signal conditioning circuit；Signal conditioning circuit is connected with logic circuit, and for receiving induced voltage signal, and output fault-signal is to logic circuit；Logic circuit carries out digital filtering for receiving fault-signal, to fault-signal, and exports cut-off signals to semiconductor module driving circuit；Semiconductor module driving circuit is for driving the switching tube of semiconductor power half-bridge module to turn off.Current protective device provided by the embodiment of the utility model can be avoided causes accidentally protection or shielding failure under extreme temperature environment, and not will increase fault detection delay.
Description
Technical field
The utility model relates to current protection fields, and in particular to a kind of current protection dress based on semiconductor module driving
It sets.
Background technique
Current protection technology is component part important in semiconductor module driving, can for the safety of power electronic equipment
Have great importance by operation.The other current protection technology of driving stage mainly has short-circuit protection and di/dt protection.Short-circuit protection
Mainly in a short-circuit situation switching tube current surge when quick protection for switching tube, on-off switching tube is to guarantee switching tube
Not by thermal breakdown and the other parts of main circuit is protected not influenced by high current, di/dt protection is mainly in curent change
Switch tube turns off when rate is larger, and prevention electric current is excessive, and switch tube causes to damage.Either short-circuit protection or di/dt are protected
Shield, which requires detection circuit, can be quickly detected failure, obtain that arteries and veins will be driven by logical process part again after fault-signal
Punching block.Can therefore detection circuit be very crucial, detect that the accuracy of malfunction and rapidity are related to protecting circuit
Reliability, be equally related to the safe and reliable operation of power electronic equipment.
Existing current protection mainly uses drain-source voltage detection scheme, utilizes SiC MOSFET (silicon-carbide metal oxygen
Compound semiconductor field effect transistor) constant-resistance characteristic (or saturated characteristic of IGBT module), drain-source voltage and drain-source electrode current
Relationship close to linear, can reflect the electric current by hourglass source electrode by detecting drain-source voltage, when drain-source electrode current increases
When, drain-source voltage can also increase that (for IGBT module, module tends to be saturated when the current increases, and voltage becomes accordingly
In saturation voltage drop), but since the drain-source voltage of switching tube is influenced by temperature larger, be influenced by temperature in this way
It is larger, it will cause accidentally protection or shielding failure under extreme temperature environment.Due to the influence of switching tube switching process, which is also
Must be provided with the blind area time go to avoid when the switch tube is turned on accidentally protect, but be arranged the blind area time will to detect failure
The time retardation of state weakens the rapidity of overcurrent protection scheme, and in addition this mode is in practical engineering applications due to threshold value
It sets relatively low, is easy to be interfered.
Utility model content
In view of this, the utility model embodiment proposes a kind of current protective device based on semiconductor module driving,
To solve the problems, such as existing overcurrent protection scheme be affected by temperature it is larger, vulnerable to interfering and need that blind area is arranged.
To achieve the above objectives, the present invention adopts the following technical solutions:
According in a first aspect, the utility model embodiment provides a kind of current protection dress based on semiconductor module driving
It sets, the current protective device includes: magnetic induction coil, signal conditioning circuit, logic circuit and semiconductor module driving circuit；
The magnetic induction coil is connected with the signal conditioning circuit, and the current changing rate for incuding semiconductor power half-bridge module is believed
Number, and induced voltage signal is exported to the signal conditioning circuit；The signal conditioning circuit is connected with the logic circuit, uses
In the reception induced voltage signal, and fault-signal is exported to the logic circuit；The logic circuit is for receiving institute
Fault-signal is stated, digital filtering is carried out to the fault-signal, and output cut-off signals to the semiconductor module drives electricity
Road；The semiconductor module driving circuit is for driving the switching tube of the semiconductor power half-bridge module to turn off.
With reference to first aspect, in first aspect first embodiment, the quantity of the magnetic induction coil is two, respectively
It is set to the source line of the drain electrode route and the down tube of upper tube in the semiconductor power half-bridge module.
First embodiment with reference to first aspect, in first aspect second embodiment, after each magnetic induction coil
Grade is respectively connected with the first signal conditioning circuit, second signal conditioning circuit, logic circuit and semiconductor module driving circuit.
Second embodiment with reference to first aspect, in first aspect third embodiment, the first signal condition electricity
Road includes: integrating circuit and first comparator circuit；The input terminal of the integrating circuit connects the output of the magnetic induction coil
End, the output end of the integrating circuit connect the reverse input end of the first comparator circuit；The first comparator circuit
Output end connect the input terminal of the logic circuit.
Third embodiment with reference to first aspect, in the 4th embodiment of first aspect, the integrating circuit includes:
One resistance, second resistance, operational amplifier, first capacitor and reset switch, the first comparator circuit include: first to compare
Device；One end of the magnetic induction coil connects the reverse input end of the operational amplifier, other end ground connection by first resistor；
One end of the second resistance connects the positive input of the operational amplifier, other end ground connection；The first capacitor and multiple
Bit switch is parallel to the reverse input end of the operational amplifier and the output end of the operational amplifier；The operation amplifier
The output end of device connects the noninverting input of the first comparator；The output end of the first comparator connects the logic electricity
The input terminal on road.
Second embodiment with reference to first aspect, in the 5th embodiment of first aspect, the second signal conditioning electricity
Road includes: the second comparator circuit；The noninverting input of second comparator connects the output end of the magnetic induction coil, institute
The output end for stating the second comparator connects the input terminal of the logic circuit.
5th embodiment with reference to first aspect, in first aspect sixth embodiment, second comparator circuit
It include: the second comparator；One end of the magnetic induction coil connects the noninverting input of second comparator, another termination
Ground；The output end of second comparator connects the input terminal of the logic circuit.
With reference to first aspect or first aspect first embodiment any embodiment party into first aspect sixth embodiment
Formula, in the 7th embodiment of first aspect, the magnetic induction coil is PCB Rogowski coil.
Technical solutions of the utility model at least have the advantages that compared with prior art
The utility model embodiment provides a kind of current protective device based on semiconductor module driving, the current protection
The magnetic induction coil of device is connected with signal conditioning circuit, and the current changing rate for incuding semiconductor power half-bridge module is believed
Number, and induced voltage signal is exported to signal conditioning circuit, signal conditioning circuit is connected with logic circuit, for receiving the sense
Answer voltage signal, and output fault-signal to logic circuit, logic circuit carries out fault-signal for receiving fault-signal
Digital filtering, and output cut-off signals, to semiconductor module driving circuit, semiconductor module driving circuit is partly led for driving
The switching tube of body power half-bridge module turns off.Current protective device provided by the embodiment of the utility model is leaked without detection switch pipe
Source voltage can be avoided to not be affected by temperature and be not easy to be disturbed and cause accidentally to protect or protect under extreme temperature environment
Shield failure goes to avoid accidentally to protect when the switch tube is turned on, to will not increase fault detection delay without the setting blind area time.
Detailed description of the invention
It, below will be right in order to illustrate more clearly of specific embodiment of the present invention or technical solution in the prior art
Specific embodiment or attached drawing needed to be used in the description of the prior art are briefly described, it should be apparent that, it is described below
In attached drawing be that some embodiments of the utility model are not paying creativeness for those of ordinary skill in the art
Under the premise of labour, it is also possible to obtain other drawings based on these drawings.
Fig. 1 is a specific example of the current protective device based on semiconductor module driving in the utility model embodiment
Functional block diagram；
Fig. 2 is the current protective device and semiconductor power half based on semiconductor module driving in the utility model embodiment
The schematic diagram of one specific example of bridge module installation site；
Fig. 3 is current protective device short circuit/overcurrent protection based on semiconductor module driving in the utility model embodiment
The schematic diagram of one specific example of (the first signal conditioning circuit)；
Fig. 4 is the current protective device current changing rate protection in the utility model embodiment based on semiconductor module driving
The schematic diagram of one specific example of (second signal conditioning circuit)；
Fig. 5 is the schematic diagram for the specific example that magnetic induction coil is drawn in the utility model embodiment；
Fig. 6 is the one of the realization process of the current protective device based on semiconductor module driving in the utility model embodiment
The flow chart of a specific example.
Specific embodiment
The technical solution of the utility model is clearly and completely described below in conjunction with attached drawing, it is clear that described
Embodiment is the utility model a part of the embodiment, instead of all the embodiments.Based on the embodiments of the present invention, originally
Field those of ordinary skill every other embodiment obtained without making creative work belongs to practical
Novel protected range.
In the description of the present invention, it should be noted that the orientation or positional relationship of the instructions such as term " on ", "lower"
To be based on the orientation or positional relationship shown in the drawings, it is merely for convenience of describing the present invention and simplifying the description, without referring to
Show or imply that signified device or element must have a particular orientation, be constructed and operated in a specific orientation, therefore cannot manage
Solution is limitations of the present invention.In addition, term " first ", " second ", " third " are used for description purposes only, and cannot understand
For indication or suggestion relative importance.
In the description of the present invention, it should be noted that unless otherwise clearly defined and limited, term " phase
Even ", " connection " shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or be integrally connected；It can
To be mechanical connection, it is also possible to be electrically connected；It can be directly connected, can also indirectly connected through an intermediary, it can be with
It is the connection inside two elements, can be wireless connection, be also possible to wired connection.For those of ordinary skill in the art
For, the concrete meaning of above-mentioned term in the present invention can be understood with concrete condition.
In addition, as long as technical characteristic involved in the utility model different embodiments disclosed below is each other
Not constituting conflict can be combined with each other.
The utility model embodiment provides a kind of current protective device based on semiconductor module driving, as shown in Figure 1,
The current protective device includes: magnetic induction coil 1, signal conditioning circuit 2, logic circuit 3 and semiconductor module driving circuit 4；
Magnetic induction coil 1 is connected with signal conditioning circuit 2, for incuding the current changing rate signal of semiconductor power half-bridge module, and
Induced voltage signal is exported to signal conditioning circuit 2；Signal conditioning circuit 2 is connected with logic circuit 3, for receiving induced voltage
Signal, and fault-signal is exported to logic circuit 3；Logic circuit 3 carries out number for receiving fault-signal, to fault-signal
Filtering, and cut-off signals are exported to semiconductor module driving circuit 4；Semiconductor module driving circuit 4 is for driving described half
The switching tube of conductor power half-bridge module turns off.
Current protective device magnetic induction coil and letter provided by the embodiment of the utility model based on semiconductor module driving
Number conditioning circuit is connected, and for incuding the current changing rate signal of semiconductor power half-bridge module, and exports induced voltage signal
To signal conditioning circuit, signal conditioning circuit is connected with logic circuit, for receiving the induced voltage signal, and output event
Hinder signal to logic circuit, logic circuit carries out digital filtering, and output shutdown for receiving fault-signal, to fault-signal
Signal to semiconductor module driving circuit, semiconductor module driving circuit is used to drive the switching tube of semiconductor power half-bridge module
Shutdown.Current protective device provided by the embodiment of the utility model is not necessarily to detection switch pipe drain-source voltage, thus not by temperature
It influences and is not easy to be disturbed, can be avoided and cause accidentally protection or shielding failure under extreme temperature environment, without setting blind area
Time goes to avoid accidentally to protect when the switch tube is turned on, to will not increase fault detection delay.
In specific embodiment of the utility model, the electric current provided in an embodiment of the present invention based on semiconductor module driving
The realization process of protective device can be, and magnetic induction coil 1 incudes the current changing rate signal of semiconductor power half-bridge module, and
Induced voltage signal is exported to signal conditioning circuit 2；Signal conditioning circuit 2 judges semiconductor power half-bridge module with the presence or absence of event
Barrier, when there are failures, output fault-signal to logic circuit 3；Logic circuit 3 carries out digital filtering to fault-signal, when event
When hindering the duration of signal greater than preset time threshold, output cut-off signals to semiconductor module driving circuit 4；Semiconductor module
Block driving circuit 4 drives the switching tube shutdown of semiconductor power half-bridge module.
It should be noted that above-mentioned signal conditioning circuit 2, logic circuit 3 may each be the conventional device using this field
Realize that above-mentioned treatment process, such as signal conditioning circuit can be comparator, logic circuit 3 can be FPGA.Also, it is above-mentioned pre-
If time threshold is also possible to as needed and experience carries out reasonable set, setting method is also the more conventional setting in this field
Method, the utility model is without limitation.
In one embodiment, as shown in Fig. 2, above-mentioned semiconductor power half-bridge module includes: top tube and down tube, upper tube
It is serially connected with down tube.Magnetic induction coil is two, is respectively arranged at the drain electrode route of upper tube in semiconductor power half-bridge module
With the source line of down tube.Each magnetic induction coil rear class is respectively connected with the first signal conditioning circuit, second signal conditioning circuit, patrols
Circuit and semiconductor module driving circuit are collected, semiconductor module driving circuit connects semiconductor power half-bridge module.
In a specific embodiment of the utility model, above-mentioned first signal conditioning circuit 2 includes: integrating circuit and
One comparator circuit, the output end of the input terminal connection magnetic induction coil of integrating circuit, the output end connection first of integrating circuit
The reverse input end of comparator circuit；The input terminal of the output end connection logic circuit of first comparator circuit.Integrating circuit pair
Induced voltage signal is integrated, the voltage signal after being integrated, and the voltage signal after integral is exported to first and is compared
Device circuit, first comparator circuit is by the voltage value of the voltage signal after integral and the first preset threshold Vref1It is compared, when
When voltage signal after integral is greater than the first preset threshold, output fault-signal to logic circuit 3.Using first signal condition
Short circuit/overcurrent protection may be implemented in circuit 2, when logic circuit 3 export cut-off signals to semiconductor module driving circuit 4, can make
The gate-source voltage of semiconductor power half-bridge module is reduced to negative pressure, shutdown is formed, to achieve the purpose that protection.
It should be noted that above-mentioned integrating circuit is the processing side of this field routine to the treatment process of induced voltage signal
Formula.
As shown in figure 3, above-mentioned integrating circuit may include: first resistor R1, second resistance R2, operational amplifier O, first
Capacitor C1 and reset switch S1, first comparator circuit include: first comparator VC1；One end of magnetic induction coil 1 passes through first
The reverse input end of resistance R1 connection operational amplifier O, the other end are grounded G；One end of second resistance R2 connects operational amplifier O
Positive input, the other end be grounded G；First capacitor C1 and reset switch S1 is parallel to the reversed input of operational amplifier O
The output end at end and operational amplifier O；The noninverting input of the output end connection first comparator VC1 of operational amplifier O；First
The input terminal of the output end connection logic circuit 3 of comparator VC1.The setting of reset switch S1 is to put first capacitor C1
Electricity, to prevent integrated value from drifting about, each switching tube requires that first capacitor C1 is made to discharge when turning off.
In one embodiment, the output valve of above-mentioned integrating circuit can be expressed asWherein, I is semiconductor
The actual current value of switching tube in power half-bridge module；M is the mutual inductance of magnetic induction coil；R1And C1Respectively above-mentioned integrating circuit
In corresponding first resistor and first capacitor；v0For the output voltage of above-mentioned integrating circuit.As can be seen that when semiconductor power half
When the actual current of the switching tube of bridge module reaches certain value, integrating circuit output valve can also reach certain value, be greater than above-mentioned fortune
The reference voltage of amplifier, that is, the first above-mentioned preset threshold are calculated, operational amplifier exports fault-signal at this time.
In a specific embodiment of the utility model, above-mentioned second signal conditioning circuit 2 includes: the second comparator
Circuit, the second comparator circuit is by the voltage value of above-mentioned induced voltage signal and the second preset threshold Vref2It is compared, works as sense
When the voltage value of voltage signal being answered to be greater than the second preset threshold, output fault-signal to logic circuit 3.Using the second signal tune
Reason circuit 2 may be implemented di/dt protection, when logic circuit 3 export cut-off signals to semiconductor module driving circuit, can make partly to lead
The gate-source voltage of body power half-bridge module is reduced to negative pressure, shutdown is formed, to achieve the purpose that protection.
As shown in figure 4, above-mentioned second comparator circuit includes: the second comparator VC2；One end of magnetic induction coil 1 connects
The noninverting input of second comparator VC2, the other end are grounded G；The output end of second comparator VC2 connects the defeated of logic circuit 3
Enter end.
It should be noted that above-mentioned first preset threshold and the second preset threshold are also possible to carry out with experience as needed
Reasonable set, setting method are also the more conventional setting method in this field, and the utility model is without limitation.
In a preferred embodiment, magnetic induction coil 1 can be PCB Rogowski coil, can be to print pcb board as base
The electric current of plinth, different change rates can make magnetic induction coil 1 export different size of voltage signal.As shown in figure 5, left side is partly to lead
The coiling schematic diagram of magnetic induction coil in upper tube drain electrode (3-D) connection line of body power half-bridge module, right side is semiconductor
The coiling schematic diagram of magnetic induction coil in down tube source electrode (2-S) connection line of power half-bridge module, the utility model are implemented
The printing electric current magnetic induction coil that example uses is to be designed realization, Ke Yigen using route and via hole on multi-layer PCB board
The design of the intermediate current perforation size of induction coil and the design of outer diameter are carried out, according to used module to increase in outer diameter
Diameter ratio increases conducting wire the number of turns, to increase the mutual inductance of magnetic induction coil.In addition to reducing and semiconductor power half-bridge module phase
Even current carrying conductor not at center for the influence of mutual inductance the line that unrolls so that one end of conducting wire first forms a circle, then with
The pcb board material for line and its surrounding of unrolling is skeleton coiling multiturn lead loop.
In some of embodiments of the utility model, above-mentioned logic circuit 3 be can be using FPGA, practical new at this
In the other embodiments of type, it is also possible to using other logic gates, the utility model is not limited.
Below with reference to Fig. 6 to the current protective device provided by the embodiment of the utility model based on semiconductor module driving
Specific implementation process is illustrated:
For short circuit/overcurrent protection, semiconductor module driving circuit gives switching tube open signal, semiconductor power half-bridge mould
The electric current in loop of power circuit where block is gradually increased by the hourglass source electrode of switching tube, switching tube drain-source electrode current to loop of power circuit
Electric current, magnetic induction coil output voltage signal during this, after integrating circuit output end forms integral as a result, this result is anti-
The actual current value of current switch pipe hourglass source electrode is reflected.If circuit works normally, switching tube drain-source electrode current can be with above-mentioned
The running of loop of power circuit and change, but always in normal current range, the result that integrating circuit exports will not
More than set reference value.If short circuit/overcurrent occurs for circuit, the output valve of integrating circuit is more than set reference value
(the first preset threshold Vref1), illustrate that drain-source electrode current has been over the maximum current value that pipe is born, operational amplifier
Fault-signal will be exported, this fault-signal, which can be input in FPGA (or other logic gates), carries out logical process, in logic
Digital filtering is carried out in circuit, and cut-off signals, shutdown letter are exported when the duration of fault-signal being more than preset time threshold
Number it is output to semiconductor module driving circuit, the switching tube gate-source voltage in semiconductor power half-bridge module is made to be reduced to negative pressure,
Shutdown is formed, to achieve the purpose that protection.
Further, since switching tube is begun to turn off after logic circuit provides cut-off signals, the decline of drain-source electrode current, under
The current protection rate born when drop can make magnetic induction coil export negative voltage signal, integrating circuit output in short circuit/overcurrent protection
Voltage can also decrease, and after switching tube shutdown, integrating circuit reset switch is resetted in short-circuit protection/overcurrent protection
Movement, makes the voltage amplitude 0 of first capacitor in integrating circuit, entire switching process terminates.
Di/dt is protected, when the abnormal current changing rate for occurring more than zone of reasonableness in circuit, magnetic induction coil is defeated
Outlet will export a biggish output voltage, and the output voltage will be more than set by above-mentioned second comparator circuit at this time
Voltage reference value (the second preset threshold Vref2), the second comparator circuit exports fault-signal, this fault-signal can be input to
Logical process is carried out in FPGA (or other logic gates), digital filtering is carried out in logic circuits, when holding for fault-signal
The continuous time exports cut-off signals when being more than preset time threshold, and cut-off signals are output to semiconductor module driving circuit, make to switch
Pipe gate-source voltage is reduced to negative pressure, shutdown is formed, to achieve the purpose that protection.
The current protective device based on semiconductor module driving that the utility model embodiment proposes, is not affected by temperature,
Be not easy to be disturbed, no setting is required blind area time and increase fault detection delay, without accessing new first device in main power circuit
Magnetic induction coil and signal conditioning circuit can be included in whole driving plate by part, easy for installation, while can also be taken into account short
Road/overcurrent protection and di/dt protection.
Obviously, the above embodiments are merely examples for clarifying the description, and does not limit the embodiments.It is right
For those of ordinary skill in the art, can also make on the basis of the above description it is other it is various forms of variation or
It changes.There is no necessity and possibility to exhaust all the enbodiments.And it is extended from this it is obvious variation or
It changes among the protection scope created still in the utility model.
Claims (8)
1. a kind of current protective device based on semiconductor module driving characterized by comprising magnetic induction coil, signal tune
Manage circuit, logic circuit and semiconductor module driving circuit；
The magnetic induction coil is connected with the signal conditioning circuit, for incuding the curent change of semiconductor power half-bridge module
Rate signal, and induced voltage signal is exported to the signal conditioning circuit；
The signal conditioning circuit is connected with the logic circuit, for receiving the induced voltage signal, and output failure
Signal is to the logic circuit；
The logic circuit carries out digital filtering, and output shutdown for receiving the fault-signal, to the fault-signal
Signal is to the semiconductor module driving circuit；
The semiconductor module driving circuit is for driving the switching tube of the semiconductor power half-bridge module to turn off.
2. current protective device according to claim 1, which is characterized in that the quantity of the magnetic induction coil is two,
Under being respectively arranged in the semiconductor power half-bridge module in the drain electrode route of upper tube and the semiconductor power half-bridge module
The source line of pipe.
3. current protective device according to claim 2, which is characterized in that each magnetic induction coil rear class is respectively connected with
First signal conditioning circuit, second signal conditioning circuit, logic circuit and semiconductor module driving circuit.
4. current protective device according to claim 3, which is characterized in that first signal conditioning circuit includes: product
Parallel circuit and first comparator circuit；
The input terminal of the integrating circuit connects the output end of the magnetic induction coil, and the output end of the integrating circuit connects institute
State the reverse input end of first comparator circuit；
The output end of the first comparator circuit connects the input terminal of the logic circuit.
5. current protective device according to claim 4, which is characterized in that the integrating circuit includes: first resistor,
Two resistance, operational amplifier, first capacitor and reset switch, the first comparator circuit includes: first comparator；
One end of the magnetic induction coil connects the reverse input end of the operational amplifier, another termination by first resistor
Ground；One end of the second resistance connects the positive input of the operational amplifier, other end ground connection；The first capacitor and
Reset switch is parallel to the reverse input end of the operational amplifier and the output end of the operational amplifier；The operation is put
The output end of big device connects the noninverting input of the first comparator；The output end of the first comparator connects the logic
The input terminal of circuit.
6. current protective device according to claim 3, which is characterized in that the second signal conditioning circuit includes:
Two comparator circuits；
The noninverting input of second comparator connects the output end of the magnetic induction coil, the output of second comparator
End connects the input terminal of the logic circuit.
7. current protective device according to claim 6, which is characterized in that second comparator circuit includes: second
Comparator；
One end of the magnetic induction coil connects the noninverting input of second comparator, other end ground connection；Second ratio
Compared with the input terminal that the output end of device connects the logic circuit.
8. current protective device according to claim 1-7, which is characterized in that the magnetic induction coil is PCB
Rogowski coil.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821878881.7U CN209313808U (en) | 2018-11-15 | 2018-11-15 | A kind of current protective device based on semiconductor module driving |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821878881.7U CN209313808U (en) | 2018-11-15 | 2018-11-15 | A kind of current protective device based on semiconductor module driving |
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| Publication Number | Publication Date |
|---|---|
| CN209313808U true CN209313808U (en) | 2019-08-27 |
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| CN201821878881.7U Active CN209313808U (en) | 2018-11-15 | 2018-11-15 | A kind of current protective device based on semiconductor module driving |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111064454A (en) * | 2019-12-24 | 2020-04-24 | 上海联影医疗科技有限公司 | PCB Rogowski coil, protection device and protection method of pulse forming circuit |
-
2018
- 2018-11-15 CN CN201821878881.7U patent/CN209313808U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111064454A (en) * | 2019-12-24 | 2020-04-24 | 上海联影医疗科技有限公司 | PCB Rogowski coil, protection device and protection method of pulse forming circuit |
| CN111064454B (en) * | 2019-12-24 | 2023-10-31 | 上海联影医疗科技股份有限公司 | Protection device and protection method for PCB (printed circuit board) Rogowski coil and pulse forming circuit |
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Effective date of registration: 20200415 Address after: 102209 Beijing City, the future of science and Technology City Binhe Road, No. 18, No. Co-patentee after: STATE GRID ZHEJIANG ELECTRIC POWER Co.,Ltd. Patentee after: GLOBAL ENERGY INTERCONNECTION RESEARCH INSTITUTE Co.,Ltd. Co-patentee after: STATE GRID CORPORATION OF CHINA Address before: 102209 Beijing City, the future of science and Technology City Binhe Road, No. 18, No. Co-patentee before: STATE GRID CORPORATION OF CHINA Patentee before: GLOBAL ENERGY INTERCONNECTION RESEARCH INSTITUTE Co.,Ltd. |