CN209312778U - Ibc电池结构 - Google Patents
Ibc电池结构 Download PDFInfo
- Publication number
- CN209312778U CN209312778U CN201821980205.0U CN201821980205U CN209312778U CN 209312778 U CN209312778 U CN 209312778U CN 201821980205 U CN201821980205 U CN 201821980205U CN 209312778 U CN209312778 U CN 209312778U
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- CN
- China
- Prior art keywords
- layer
- doped layer
- tunnel oxide
- described matrix
- matrix
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000002161 passivation Methods 0.000 claims abstract description 69
- 239000011159 matrix material Substances 0.000 claims abstract description 67
- 239000002184 metal Substances 0.000 claims description 30
- 229910052751 metal Inorganic materials 0.000 claims description 30
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 24
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 24
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 18
- 238000007667 floating Methods 0.000 claims description 11
- 239000000377 silicon dioxide Substances 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 38
- 229910052710 silicon Inorganic materials 0.000 description 38
- 239000010703 silicon Substances 0.000 description 38
- 238000010586 diagram Methods 0.000 description 32
- 239000000463 material Substances 0.000 description 28
- 238000000034 method Methods 0.000 description 16
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 12
- 229920005591 polysilicon Polymers 0.000 description 12
- 230000000694 effects Effects 0.000 description 11
- 230000005540 biological transmission Effects 0.000 description 9
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 8
- 229910021417 amorphous silicon Inorganic materials 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 8
- 229910052698 phosphorus Inorganic materials 0.000 description 8
- 239000011574 phosphorus Substances 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 238000005137 deposition process Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 230000005641 tunneling Effects 0.000 description 4
- 229910003978 SiClx Inorganic materials 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 230000031700 light absorption Effects 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 238000003912 environmental pollution Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 239000002905 metal composite material Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 230000026267 regulation of growth Effects 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000009279 wet oxidation reaction Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003345 natural gas Substances 0.000 description 1
- 239000003208 petroleum Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000011514 reflex Effects 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201821980205.0U CN209312778U (zh) | 2018-11-28 | 2018-11-28 | Ibc电池结构 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201821980205.0U CN209312778U (zh) | 2018-11-28 | 2018-11-28 | Ibc电池结构 |
Publications (1)
Publication Number | Publication Date |
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CN209312778U true CN209312778U (zh) | 2019-08-27 |
Family
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Family Applications (1)
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CN201821980205.0U Active CN209312778U (zh) | 2018-11-28 | 2018-11-28 | Ibc电池结构 |
Country Status (1)
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CN (1) | CN209312778U (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110634983A (zh) * | 2019-09-26 | 2019-12-31 | 苏州腾晖光伏技术有限公司 | 一种晶硅太阳电池及其制备方法 |
CN112736163A (zh) * | 2021-02-10 | 2021-04-30 | 普乐(合肥)光技术有限公司 | 一种多晶硅薄膜钝化背极插指型太阳能电池的制备方法 |
CN113224202A (zh) * | 2021-03-15 | 2021-08-06 | 浙江爱旭太阳能科技有限公司 | 一种polo-ibc太阳能电池及其制备方法 |
-
2018
- 2018-11-28 CN CN201821980205.0U patent/CN209312778U/zh active Active
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110634983A (zh) * | 2019-09-26 | 2019-12-31 | 苏州腾晖光伏技术有限公司 | 一种晶硅太阳电池及其制备方法 |
CN112736163A (zh) * | 2021-02-10 | 2021-04-30 | 普乐(合肥)光技术有限公司 | 一种多晶硅薄膜钝化背极插指型太阳能电池的制备方法 |
CN112736163B (zh) * | 2021-02-10 | 2022-07-29 | 普乐(合肥)光技术有限公司 | 一种多晶硅薄膜钝化背极插指型太阳能电池的制备方法 |
CN113224202A (zh) * | 2021-03-15 | 2021-08-06 | 浙江爱旭太阳能科技有限公司 | 一种polo-ibc太阳能电池及其制备方法 |
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GR01 | Patent grant | ||
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Effective date of registration: 20210608 Address after: No. 589, Chang'an Street, Xi'an Aerospace base, Shaanxi Province, 710099 Patentee after: STATE POWER INVESTMENT CORPORATION XI'AN SOLAR POWER Co.,Ltd. Patentee after: Huanghe hydropower Xining Solar Power Co.,Ltd. Patentee after: HUANGHE HYDROPOWER DEVELOPMENT Co.,Ltd. Patentee after: QINGHAI HUANGHE HYDROPOWER DEVELOPMENT Co.,Ltd. Address before: 710100 Shaanxi Xi'an space base east Chang'an Avenue 589 Patentee before: STATE POWER INVESTMENT CORPORATION XI'AN SOLAR POWER Co.,Ltd. Patentee before: XINING BRANCH OF SPIC XI'AN SOLAR POWER Co.,Ltd. Patentee before: HUANGHE HYDROPOWER DEVELOPMENT Co.,Ltd. Patentee before: QINGHAI HUANGHE HYDROPOWER DEVELOPMENT Co.,Ltd. |
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TR01 | Transfer of patent right |
Effective date of registration: 20220328 Address after: 810007 No. 4, Jinsi Road, Dongchuan Industrial Park, Xining City, Qinghai Province Patentee after: Xining solar power branch of Qinghai upper Yellow River Hydropower Development Co.,Ltd. Patentee after: Xi'an solar power branch of Qinghai upper Yellow River Hydropower Development Co.,Ltd. Patentee after: HUANGHE HYDROPOWER DEVELOPMENT Co.,Ltd. Patentee after: QINGHAI HUANGHE HYDROPOWER DEVELOPMENT Co.,Ltd. Address before: No. 589, Chang'an Street, Xi'an Aerospace base, Shaanxi Province, 710099 Patentee before: STATE POWER INVESTMENT CORPORATION XI'AN SOLAR POWER Co.,Ltd. Patentee before: Huanghe hydropower Xining Solar Power Co.,Ltd. Patentee before: HUANGHE HYDROPOWER DEVELOPMENT Co.,Ltd. Patentee before: QINGHAI HUANGHE HYDROPOWER DEVELOPMENT Co.,Ltd. |
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TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20240116 Address after: 810008 No. 43, Wusi West Road, Chengxi District, Xining City, Qinghai Province Patentee after: QINGHAI HUANGHE HYDROPOWER DEVELOPMENT Co.,Ltd. Address before: 810007 No. 4, Jinsi Road, Dongchuan Industrial Park, Xining City, Qinghai Province Patentee before: Xining solar power branch of Qinghai upper Yellow River Hydropower Development Co.,Ltd. Patentee before: Xi'an solar power branch of Qinghai upper Yellow River Hydropower Development Co.,Ltd. Patentee before: HUANGHE HYDROPOWER DEVELOPMENT Co.,Ltd. Patentee before: QINGHAI HUANGHE HYDROPOWER DEVELOPMENT Co.,Ltd. |