CN209307515U - A kind of crystal growing apparatus of light modulation local strengthening - Google Patents
A kind of crystal growing apparatus of light modulation local strengthening Download PDFInfo
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- CN209307515U CN209307515U CN201822245239.1U CN201822245239U CN209307515U CN 209307515 U CN209307515 U CN 209307515U CN 201822245239 U CN201822245239 U CN 201822245239U CN 209307515 U CN209307515 U CN 209307515U
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- light beam
- light
- crystal
- seed crystal
- light source
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- 239000013078 crystal Substances 0.000 title claims abstract description 84
- 238000005728 strengthening Methods 0.000 title claims abstract description 17
- 238000006243 chemical reaction Methods 0.000 claims abstract description 38
- 238000010438 heat treatment Methods 0.000 claims description 20
- 230000003287 optical effect Effects 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 8
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 6
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 6
- 230000005674 electromagnetic induction Effects 0.000 claims description 3
- 230000000737 periodic effect Effects 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 230000005469 synchrotron radiation Effects 0.000 claims description 3
- 229910052571 earthenware Inorganic materials 0.000 claims description 2
- 239000010453 quartz Substances 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 229910002601 GaN Inorganic materials 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 239000011734 sodium Substances 0.000 description 4
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 229910052708 sodium Inorganic materials 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000003313 weakening effect Effects 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 210000001367 artery Anatomy 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 210000003462 vein Anatomy 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The utility model relates to a kind of crystal growing apparatus of light modulation local strengthening, including reaction kettle, laser light source, crucible in reaction kettle is set, it is loaded in reaction solution in crucible, the seed crystal and light beam integer component being immersed in reaction solution, reaction kettle is equipped with incident window, the light beam that laser light source issues is injected in crucible by incident window, light beam integer component is set between incident window and seed crystal, light beam can be converged in the local location of seed crystal by light beam integer component or the light beam of seed crystal local location can be weakened by light beam integer component, compared with prior art, the utility model has additional light beam integer component, the light beam that laser light source issues is injected in crucible by incident window, light beam integer component can converge or weaken light beam, light beam is by forming light and shade area at the seed crystal back side after light beam integer component Domain effectively locally enhances or weakens crystal growth rate to realize the luminous intensity and temperature adjustment of seed crystal local location.
Description
Technical field
The present invention relates to technical field of crystal growth, fill more particularly to a kind of crystal growth of light modulation local strengthening
It sets.
Background technique
Gallium nitride (GaN) is due to the advantages that its forbidden bandwidth is big, chemical property is stable, high temperature resistant, high mobility, in photoelectricity
It is widely used in terms of power microwave device.Currently, the growing method of GaN crystal includes Metal Organic Chemical Vapor
Sedimentation (MOCVD), hydride vapour phase epitaxy method (HVPE), ammonia heat method (Ammothermal Growth) and sodium stream method (Na
Flux), wherein sodium stream method growing gan crystal has preferable crystal quality and faster growth rate, becomes preferred growth
One of method.It is used in the autoclave of sodium stream method at present and needs to be passed through nitrogen, condition of the nitrogen in autoclave in high temperature and pressure
Under be dissolved in the Ga-Na solution in crucible, while can in autoclave so that can carry out reaction at seed crystal grows into GaN crystal
Promote the electrolysis of nitrogen by introducing light action, accelerate nitrogen and be dissolved in reaction solution, improves GaN crystal growth rate, but
For the crystal growing apparatus of above structure in GaN crystal growth course, entire seed crystal, can not basis all in a steady state
Crystal material growth state carries out local temperature adjustment, thus can not adjust the local growth rate of seed crystal.
Summary of the invention
To solve the above problems, the present invention provides a kind of crystal growing apparatus of light modulation local strengthening, to part into
Row light intensity and temperature adjustment, can effectively local enhancement or weaken crystal growth rate.
To solve above-mentioned purpose, the present invention adopts the following technical scheme.
A kind of crystal growing apparatus of light modulation local strengthening, including reaction kettle, laser light source, is arranged in reaction kettle
Crucible is loaded in reaction solution and the seed crystal being immersed in reaction solution in crucible, and reaction kettle is equipped with incident window, laser light source
The light beam of sending is injected in crucible by incident window, further includes light beam integer component, and light beam integer component is set to incidence
Between window and seed crystal, light beam can be converged in by light beam integer component by the local location of seed crystal or by light beam integer member
Device can weaken the light beam of seed crystal local location.
It preferably, further include seed holder of beginning to speak, seed crystal, which is installed in, begins to speak seed holder and seed holder of beginning to speak can suspend
In in reaction solution.
Preferably, light beam integer component is installed in seed holder of beginning to speak and light beam integer component is located on seed crystal
Side.
Preferably, seed holder of beginning to speak mainly is made of light material, which can be SiC or thin-walled quartz.
Preferably, light beam integer device is equipped at least one optical mirror slip, which is arranged with several micro-structures,
The micro-structure may be configured as optical lens or optical filter to enhance or weaken the light beam of seed crystal local location.
Preferably, the light beam that laser light source issues can remain stationary or do scanning motion in reaction kettle cavity, should
Scanning motion can scan for periodic motion scanning or random motion.
Preferably, laser light source can be the one or more of synchrotron radiation light source, LD light source, LED light source or frequency multiplication light source,
The luminous intensity that laser light source issues light beam can be invariable or adjustable.
Preferably, it can be continuous light or arteries and veins that laser light source, which issues the light beam that ultraviolet light or infrared light and laser light source issue,
It washes off.
Preferably, further include heating device, heating device can reaction solution in heating crucible to reach required crystal
Growth temperature, heating device be set as electromagnetic induction heater, heat transfer heating device or radio frequency heating apparatus one kind or
A variety of, reaction kettle is equipped with for being passed through gas and adjusting the air inlet and air outlet of pressure.
Preferably, seed crystal can be the one or more of Sapphire Substrate or silicon carbide substrates, and light beam integer device can be
Convex lens or prism it is one or more.
Beneficial effects of the present invention are as follows:
Compared with prior art, the present invention has additional light beam integer component, and the light beam that laser light source issues passes through incidence
Window is injected in crucible, and light beam integer component can converge or weaken light beam, and light beam passes through after light beam integer component in seed crystal
The back side forms light and shade region, to realize the luminous intensity and temperature adjustment of seed crystal local location, effectively locally enhances or weakens
Crystal growth rate, in actual application, when light beam integer component be by light beam in the convergence of seed crystal back side partial points,
According under effect, the big temperatures at localized regions of luminous intensity gradually rises bloom, effectively local enhancement crystal growth rate, and works as light
Beam integer component is the small temperatures at localized regions of the luminous intensity temperatures at localized regions big lower than luminous intensity when weakening light beam, phase
Crystal growth rate is weakened in part over the ground.
Detailed description of the invention
Fig. 1 is the schematic cross-sectional view of one embodiment of the present of invention；
Fig. 2 is the structural schematic diagram of the light beam integer component of one embodiment of the present of invention.
Description of symbols: 1. reaction kettles, 2. air inlets, 3. gas outlets, 4. heating devices, 5. crucibles, 6. reaction solutions,
7. seed crystal, 8. are begun to speak seed holder, 9. laser light sources, 10. incident windows, 11. light beam integer components, 110. micro-structures.
Specific embodiment
The present invention will be further explained below with reference to the accompanying drawings.
Referring to figs. 1 to Fig. 2, a kind of crystal growing apparatus of light modulation local strengthening, including reaction kettle 1, laser light source 9,
The crucible 5 that is arranged in reaction kettle 1 is loaded in reaction solution 6 in crucible 5, the seed crystal 7 being immersed in reaction solution 6 and light beam
Integer component 11, reaction kettle 1 are equipped with incident window 10, and the light beam that laser light source 9 issues injects crucible 5 by incident window 10
Interior, light beam integer component 11 is set between incident window 10 and seed crystal 7, can be converged light beam by light beam integer component 11
The light beam that 7 local location of seed crystal can be weakened in the local location of seed crystal 7 or by light beam integer component 11, with prior art phase
Than the present embodiment has additional light beam integer component 11, and the light beam that laser light source 9 issues injects crucible 5 by incident window 10
Interior, light beam integer component 11 can converge or weaken light beam, and light beam after light beam integer component 11 at 7 back side of seed crystal by forming
Light and shade region effectively locally enhances or weakens crystal growth to realize the luminous intensity and temperature adjustment of 7 local location of seed crystal
Rate, in actual application, when light beam integer component 11 is by light beam in the convergence of 7 back side partial points of seed crystal, in bloom
According under effect, the big temperatures at localized regions of luminous intensity is gradually risen, effectively local enhancement crystal growth rate, and when light beam is whole
Type component 11 is the small temperatures at localized regions of the luminous intensity temperatures at localized regions big lower than luminous intensity when weakening light beam, relatively
Locally weaken crystal growth rate in ground.
In the present embodiment, light beam integer device converges light beam in 7 back side partial points of seed crystal, referring to Fig. 2, light beam integer
Device uses a complete optical mirror slip, which is arranged with several micro-structures 110, and the micro-structure 110 is settable
For optical lens, light beam converges in 7 back side of seed crystal by partial points after the optical lens, can locally change crystal material growth speed
Rate, in other are preferably implemented, which may also be configured to optical filter, weaken the light beam of 7 local location of seed crystal, from
And part changes specimen material growth rate, in other preferred embodiments, light beam integer device can also be convex lens or rib
Mirror it is one or more, can converging beam with part change specimen material growth rate, details are not described herein.
Fig. 1 is shown, and the present embodiment further includes seed holder 8 of beginning to speak, and seed crystal 7 is installed in begin to speak seed holder 8 and seed of beginning to speak
Brilliant fixture 8 can be suspended in reaction solution 6, and light beam integer component 11 is installed in seed holder 8 of beginning to speak and light beam integer member
Device 11 is located at 7 top of seed crystal, and seed holder of beginning to speak 8 is mainly made of light material, which can be SiC or thin-walled stone
The seed crystal 7 of English, the present embodiment can be one or more, the reaction solution of the present embodiment of Sapphire Substrate or silicon carbide substrates
6 be liquid-gallium source, and under buoyancy, seed holder of beginning to speak 8 is suspended at the certain depth inside liquid-gallium source, and seed crystal 7 is same
Sample is suspended in liquid-gallium source, and crystalline material starts to grow, and laser light source 9 is injected in crucible 5 from incident window 10, via light beam
The light beam of integer device is converged in 7 back side partial points of seed crystal, changes the Material growth rate of sample so as to part.
It is continuous light that the laser light source 9 of the present embodiment, which issues the light beam that ultraviolet light and laser light source 9 issue, but is not limited to
This, it is pulsed light that the sending of laser light source 9, which is the light beam that infrared light and laser light source 9 issue, in other preferred embodiments, is added
Fast growing efficiency, the light beam that the laser light source 9 in the present embodiment issues can remain stationary or in 1 cavity of reaction kettle
Scanning motion is done, which can scan for periodic motion scanning or random motion, and laser light source 9 can be synchrotron radiation light
Source, LD light source, LED light source or frequency multiplication light source it is one or more, laser light source 9 issue light beam luminous intensity can it is invariable or
It is adjustable, it can be selected according to demand, 7 back side of seed crystal is radiated at the requirement according to regulation.
Fig. 1 is shown, and the present embodiment further includes three groups of heating devices 4, and three groups of heating devices are located at crucible two sides and earthenware
Crucible bottom, heating device 4 can reaction solution 6 in heating crucible 5 to reach required crystal growth temperature, heating device 4 is set
It is set to electromagnetic induction heater 4, heat transfer heating device 4 or radio frequency heating apparatus 4, reaction kettle 1 is equipped with for being passed through gas
And air inlet 2 and the gas outlet 3 of adjustment pressure, in this way, making 1 chamber of reaction kettle by heating device 4, air inlet 2 and gas outlet 3
Condition needed for internal pressure and temperature all reach growth.
The embodiments described above only express several embodiments of the present invention, and the description thereof is more specific and detailed, but simultaneously
Limitations on the scope of the patent of the present invention therefore cannot be interpreted as.It should be pointed out that for those of ordinary skill in the art
For, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to guarantor of the invention
Protect range.Therefore, the scope of protection of the patent of the invention shall be subject to the appended claims.
Claims (10)
1. a kind of crystal growing apparatus of light modulation local strengthening, including reaction kettle, laser light source, the earthenware being arranged in reaction kettle
Crucible is loaded in reaction solution and the seed crystal being immersed in reaction solution in crucible, and reaction kettle is equipped with incident window, laser light source hair
Light beam out is injected in crucible by incident window, which is characterized in that further includes light beam integer component, light beam integer component
Between incident window and seed crystal, light beam can be converged in by light beam integer component by the local location of seed crystal or pass through light
Beam integer component can weaken the light beam of seed crystal local location.
2. a kind of crystal growing apparatus of light modulation local strengthening according to claim 1, which is characterized in that further include out
Chamber seed holder, seed crystal, which is installed in, begins to speak seed holder and seed holder of beginning to speak can be suspended in reaction solution.
3. a kind of crystal growing apparatus of light modulation local strengthening according to claim 2, which is characterized in that light beam integer
Component is installed in seed holder of beginning to speak and light beam integer component is located above seed crystal.
4. a kind of crystal growing apparatus of light modulation local strengthening according to claim 2, which is characterized in that seed crystal of beginning to speak
Fixture is mainly made of light material, which can be SiC or thin-walled quartz.
5. a kind of crystal growing apparatus of light modulation local strengthening according to claim 1, which is characterized in that light beam integer
Device is equipped at least one optical mirror slip, which is arranged with several micro-structures, which may be configured as optical lens
Mirror or optical filter are to enhance or weaken the light beam of seed crystal local location.
6. a kind of crystal growing apparatus of light modulation local strengthening according to claim 1, which is characterized in that laser light source
The light beam of sending can remain stationary or do scanning motion in reaction kettle cavity, which can scan for periodic motion
Or random motion scanning.
7. a kind of crystal growing apparatus of light modulation local strengthening according to claim 6, which is characterized in that laser light source
It can be the one or more of synchrotron radiation light source, LD light source, LED light source or frequency multiplication light source, laser light source issues the light intensity of light beam
Degree can be invariable or adjustable.
8. a kind of crystal growing apparatus of light modulation local strengthening according to claim 6, which is characterized in that laser light source
Issuing the light beam that ultraviolet light or infrared light and laser light source issue can be continuous light or pulsed light.
9. a kind of crystal growing apparatus of light modulation local strengthening according to claim 1, which is characterized in that further include adding
Thermal, heating device can reaction solution in heating crucible to reach required crystal growth temperature, heating device is set as
Electromagnetic induction heater, heat transfer heating device or radio frequency heating apparatus it is one or more, reaction kettle is equipped with for being passed through
Gas and the air inlet and air outlet for adjusting pressure.
10. a kind of crystal growing apparatus of light modulation local strengthening according to claim 1, which is characterized in that seed crystal can
Think the one or more of Sapphire Substrate or silicon carbide substrates, light beam integer device can be one kind or more of convex lens or prism
Kind.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201822245239.1U CN209307515U (en) | 2018-12-27 | 2018-12-27 | A kind of crystal growing apparatus of light modulation local strengthening |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201822245239.1U CN209307515U (en) | 2018-12-27 | 2018-12-27 | A kind of crystal growing apparatus of light modulation local strengthening |
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| Publication Number | Publication Date |
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| CN209307515U true CN209307515U (en) | 2019-08-27 |
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|---|---|---|---|
| CN201822245239.1U Withdrawn - After Issue CN209307515U (en) | 2018-12-27 | 2018-12-27 | A kind of crystal growing apparatus of light modulation local strengthening |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109440189A (en) * | 2018-12-27 | 2019-03-08 | 北京大学东莞光电研究院 | A kind of crystal growing apparatus of light modulation local strengthening |
-
2018
- 2018-12-27 CN CN201822245239.1U patent/CN209307515U/en not_active Withdrawn - After Issue
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109440189A (en) * | 2018-12-27 | 2019-03-08 | 北京大学东莞光电研究院 | A kind of crystal growing apparatus of light modulation local strengthening |
| CN109440189B (en) * | 2018-12-27 | 2024-01-30 | 北京大学东莞光电研究院 | Crystal growth device with locally reinforced light modulation |
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| AV01 | Patent right actively abandoned | ||
| AV01 | Patent right actively abandoned | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20190827 Effective date of abandoning: 20240130 |
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| AV01 | Patent right actively abandoned |
Granted publication date: 20190827 Effective date of abandoning: 20240130 |