CN209233803U - A kind of broadband matching circuit suitable for high-frequency power device - Google Patents
A kind of broadband matching circuit suitable for high-frequency power device Download PDFInfo
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- CN209233803U CN209233803U CN201822081134.7U CN201822081134U CN209233803U CN 209233803 U CN209233803 U CN 209233803U CN 201822081134 U CN201822081134 U CN 201822081134U CN 209233803 U CN209233803 U CN 209233803U
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- match circuit
- power device
- frequency power
- broadband matching
- matching circuit
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Abstract
The utility model relates to a kind of broadband matching circuits suitable for high-frequency power device, broadband matching circuit working frequency is between 5Ghz-6Ghz, including encapsulating package, encapsulating package is internally provided with GaN chip, GaN chip both ends are respectively arranged with input terminal two-stage match circuit and output end two-stage match circuit, input terminal two-stage match circuit and output end two-stage match circuit include first order match circuit and second level match circuit, first order match circuit is L-type match circuit, and second level match circuit is quarter-wave impedance transformation line.The utility model provide it is a kind of it is integrated it is high, matching performance is good, power density is high, broadband is big, high-efficient, the broadband matching circuit suitable for high-frequency power device.
Description
Technical field
The utility model relates to field of circuit technology more particularly to power amplifiers, and in particular to one kind is suitable for high frequency
The broadband matching circuit of power device.
Background technique
GaN microwave power device has the features such as power density is high, high-efficient, working frequency is higher, in military products and civilian goods
In terms of market, the product compared to other techniques is had great advantages, therefore is widely applied.At present due to miniature
Change, the requirement of big bandwidth, under high frequency script just difficult matched situation, Yao Shixian microwave power device power density height, bandwidth
Greatly, high-efficient even more extremely difficult.
Therefore need to research and develop it is a kind of it is integrated it is high, matching performance is good, power density is high, with roomy, high-efficient, be suitable for height
The broadband matching circuit of frequency power device.
Summary of the invention
Technical problem to be solved in the utility model is to overcome the deficiencies of existing technologies, provide it is a kind of it is integrated it is high,
With performance is good, power density is high, broadband is big, high-efficient, the broadband matching circuit suitable for high-frequency power device.
In order to achieve the above objectives, a kind of the technical solution adopted in the utility model are as follows: width suitable for high-frequency power device
Band match circuit, broadband matching circuit working frequency is between 5Ghz-6Ghz, including encapsulating package, setting inside encapsulating package
There is GaN chip, GaN chip both ends are respectively arranged with input terminal two-stage match circuit and output end two-stage match circuit, input terminal
Two-stage match circuit and output end two-stage match circuit include first order match circuit and second level match circuit, the first order
It is L-type match circuit with circuit, second level match circuit is quarter-wave impedance transformation line.
In one preferred embodiment of the utility model, L-type match circuit includes series inductance and direct-to-ground capacitance.
In one preferred embodiment of the utility model, quarter-wave impedance transformation line is using aluminium oxide as the micro- of substrate
Band line can realize that the impedance of 10 Ω to 50 Ω converts in 5Ghz-6Ghz.
In one preferred embodiment of the utility model, series inductance is made of bonding gold wire.
In one preferred embodiment of the utility model, direct-to-ground capacitance uses adjustable single capacitor.
In one preferred embodiment of the utility model, the characteristic impedance of quarter-wave impedance transformation line is 22.3 Ω,
Electrical length is 90 °.
In one preferred embodiment of the utility model, input terminal two-stage match circuit includes in the first L-type match circuit
First series inductance and the first direct-to-ground capacitance and input terminal quarter-wave impedance transformation line；Output end two-stage matching electricity
Road includes the second series inductance in the second L-type match circuit and the second direct-to-ground capacitance and the resistance of output end quarter-wave
Resistance thread-changing.
In one preferred embodiment of the utility model, the controlling party of the broadband matching circuit suitable for high-frequency power device
Method, signal are introduced from the input terminal of encapsulating package, are passed to the first input end of input terminal quarter-wave impedance transformation line, so
It is exported afterwards from the first output end of input terminal quarter-wave impedance transformation line, successively passes through the first series inductance, first pair
Ground capacitor, the first bonding gold wire reach GaN chip input terminal；Then pass through the second series inductance, second from GaN chip output
Direct-to-ground capacitance, the second bonding gold wire are passed to the second input terminal of output end quarter-wave impedance transformation line, then by from defeated
The second output terminal of outlet quarter-wave impedance transformation line and the output end of encapsulating package are connected and are exported.
The utility model solves defect present in background technique, the beneficial effects of the utility model are:
A kind of broadband matching circuit suitable for high-frequency power device of the utility model, two-stage match circuit can increase
Device bandwidth of operation, solving the problems, such as GaN chip, real impedance is small in high frequency, is difficult to Broadband Matching, simultaneously because the second level
Microstrip line is blocked impedance transformation, therefore need to only debug first order match circuit, reduces workload, easy to produce；A quarter
Wavelength impedance transformation line can effectively reduce the loss in signals transmission, increase return loss, improve gain, and line width compared with
Width will not generate electromigration to ensure the long-term reliability of device；It finally realizes a kind of suitable for high-frequency power device
Broadband matching circuit.
Detailed description of the invention
The present invention will be further described with reference to the accompanying drawings and examples.
Fig. 1 is the broadband matching circuit structural schematic diagram suitable for high-frequency power device of the utility model；
Fig. 2 is that the impedance of input terminal quarter-wave converts line amplifier schematic diagram in Fig. 1；
Fig. 3 is that the impedance of output end quarter-wave converts line amplifier schematic diagram in Fig. 1；
Fig. 4 is GaN chip schematic diagram；
In figure: 1- encapsulating package, 5-GaN chip, 51-GaN chip input terminal, 52- GaN chip output, 21- input
Hold quarter-wave impedance transformation line, 22- output end quarter-wave impedance transformation line, 211- first input end, 212-
First output end；The second input terminal of 221-, 222- second output terminal, the first direct-to-ground capacitance of 31-, the second direct-to-ground capacitance of 32-, 41-
First bonding gold wire, the second bonding gold wire of 42-.
Specific embodiment
The utility model is described in further detail presently in connection with drawings and examples, these attached drawings are simplified
Schematic diagram only illustrates the basic structure of the utility model in a schematic way, therefore it only shows structure related with the utility model
At.
As shown in Fig. 1 ~ 4, a kind of broadband matching circuit suitable for high frequency power, broadband matching circuit working frequency exists
Between 5Ghz-6Ghz, including encapsulating package 1, encapsulating package 1 are internally provided with GaN chip 5, and 5 both ends of GaN chip are respectively set
There are input terminal two-stage match circuit and output end two-stage match circuit, input terminal two-stage match circuit and output end two-stage matching electricity
Road includes first order match circuit and second level match circuit, and first order match circuit is L-type match circuit, second level matching
Circuit is quarter-wave impedance transformation line.
Further, L-type match circuit includes series inductance and direct-to-ground capacitance；Direct-to-ground capacitance uses adjustable single capacitor.
Further, quarter-wave impedance transformation line is the microstrip line using aluminium oxide as substrate, can be in 5Ghz-6Ghz
The impedance transformation of 10 Ω to 50 Ω can be achieved.Series inductance is formed by bonding gold wire.The spy of quarter-wave impedance transformation line
Sign impedance is 22.3 Ω, and electrical length is 90 °.
In one preferred embodiment of the utility model, input terminal two-stage match circuit includes in the first L-type match circuit
First series inductance and the first direct-to-ground capacitance 31 and input terminal quarter-wave impedance transformation line 21；Output end two-stage
It include the second series inductance in the second L-type match circuit and the second direct-to-ground capacitance 32 and output end a quarter with circuit
Wavelength impedance transformation line 22.
In one preferred embodiment of the utility model, encapsulating package 1 is internally provided with GaN chip 5, GaN chip input terminal
51 are connect by input terminal two-stage match circuit with 1 input terminal of encapsulating package, and GaN chip output 52 passes through output end two-stage
It is connect with circuit with 1 output end of encapsulating package；Input terminal two-stage match circuit includes the input connecting with 1 input terminal of encapsulating package
Hold the first output end 212 of quarter-wave impedance transformation line 21 and input terminal quarter-wave impedance transformation line 21
It is connected with the first series inductance and the first direct-to-ground capacitance 31, the first series inductance and the first direct-to-ground capacitance 31 pass through the first bonding gold
Silk 41 is connect with GaN chip input terminal 51；Output end two-stage match circuit includes the output end connecting with 1 output end of encapsulating package
The second output terminal 222 of quarter-wave impedance transformation line 22 and output end quarter-wave impedance transformation line 22 connects
It is connected to the second series inductance and the second direct-to-ground capacitance 32, the first series inductance and the second direct-to-ground capacitance 32 pass through the second bonding gold wire
42 connect with GaN chip output 52.Further, the first direct-to-ground capacitance 31 use 10pf adjustable single capacitor, second pair
Ground capacitor 32 uses 4pf adjustable single capacitor.
A kind of working principle of broadband matching circuit suitable for high-frequency power device of the utility model is: signal is from envelope
The input terminal of tubulature shell 1 introduces, and is passed to the first input end 211 of input terminal quarter-wave impedance transformation line 21, then from
First output end 212 of input terminal quarter-wave impedance transformation line 21 exports, and successively passes through the first series inductance, first pair
Ground capacitor 31, the first bonding gold wire 41 reach GaN chip input terminal 51；Then from GaN chip output 52 by the second series connection
It is second defeated to be passed to output end quarter-wave impedance transformation line 22 for inductance, the second direct-to-ground capacitance 32, the second bonding gold wire 42
Enter end 221, then passes through the second output terminal 222 of output end quarter-wave impedance transformation line 22 and the output of encapsulating package 1
End connection output.
It is above enlightenment according to the desirable embodiment of the utility model, through the above description, has relevant speciality
Knowledge personnel can carry out various changes and amendments in the range of without departing from this item utility model technical idea completely.
The technical scope of this item utility model is not limited to the contents of the specification, it is necessary to be determined according to scope of the claims
Technical scope.
Claims (7)
1. a kind of broadband matching circuit suitable for high-frequency power device, it is characterised in that: broadband matching circuit working frequency exists
Between 5Ghz-6Ghz, including encapsulating package, encapsulating package are internally provided with GaN chip, and GaN chip both ends are respectively arranged with defeated
Enter to hold two-stage match circuit and output end two-stage match circuit, input terminal two-stage match circuit and output end two-stage match circuit are equal
Including first order match circuit and second level match circuit, first order match circuit is L-type match circuit, second level match circuit
It is quarter-wave impedance transformation line.
2. the broadband matching circuit according to claim 1 suitable for high-frequency power device, it is characterised in that: L-type matching
Circuit includes series inductance and direct-to-ground capacitance.
3. the broadband matching circuit according to claim 2 suitable for high-frequency power device, it is characterised in that: a quarter
Wavelength impedance transformation line is the microstrip line using aluminium oxide as substrate, can realize that the impedance of 10 Ω to 50 Ω becomes in 5Ghz-6Ghz
It changes.
4. the broadband matching circuit according to claim 2 suitable for high-frequency power device, it is characterised in that: series inductance
It is made of bonding gold wire.
5. the broadband matching circuit according to claim 2 suitable for high-frequency power device, it is characterised in that: direct-to-ground capacitance
Using adjustable single capacitor.
6. the broadband matching circuit according to claim 2 suitable for high-frequency power device, it is characterised in that: a quarter
The characteristic impedance of wavelength impedance transformation line is 22.3 Ω, and electrical length is 90 °.
7. the broadband matching circuit according to claim 2 suitable for high-frequency power device, it is characterised in that: input terminal two
Grade match circuit include the first series inductance in the first L-type match circuit and the first direct-to-ground capacitance and input terminal four/
One wavelength impedance transformation line；Output end two-stage match circuit includes the second series inductance and second in the second L-type match circuit
Direct-to-ground capacitance and output end quarter-wave impedance transformation line.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201822081134.7U CN209233803U (en) | 2018-12-12 | 2018-12-12 | A kind of broadband matching circuit suitable for high-frequency power device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201822081134.7U CN209233803U (en) | 2018-12-12 | 2018-12-12 | A kind of broadband matching circuit suitable for high-frequency power device |
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| Publication Number | Publication Date |
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| CN209233803U true CN209233803U (en) | 2019-08-09 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201822081134.7U Active CN209233803U (en) | 2018-12-12 | 2018-12-12 | A kind of broadband matching circuit suitable for high-frequency power device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109546990A (en) * | 2018-12-12 | 2019-03-29 | 江苏博普电子科技有限责任公司 | A kind of broadband matching circuit suitable for high-frequency power device |
-
2018
- 2018-12-12 CN CN201822081134.7U patent/CN209233803U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109546990A (en) * | 2018-12-12 | 2019-03-29 | 江苏博普电子科技有限责任公司 | A kind of broadband matching circuit suitable for high-frequency power device |
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