CN209227057U - Make the vapor phase growing apparatus of HIT silion cell - Google Patents
Make the vapor phase growing apparatus of HIT silion cell Download PDFInfo
- Publication number
- CN209227057U CN209227057U CN201821892208.9U CN201821892208U CN209227057U CN 209227057 U CN209227057 U CN 209227057U CN 201821892208 U CN201821892208 U CN 201821892208U CN 209227057 U CN209227057 U CN 209227057U
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- China
- Prior art keywords
- silicon substrate
- vacuum chamber
- vapor phase
- radio
- power supply
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000012808 vapor phase Substances 0.000 title claims abstract description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 42
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 42
- 239000010703 silicon Substances 0.000 claims abstract description 42
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 238000004519 manufacturing process Methods 0.000 claims abstract description 13
- 239000007789 gas Substances 0.000 claims description 40
- 230000005684 electric field Effects 0.000 claims description 9
- 238000010992 reflux Methods 0.000 claims description 9
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 7
- 229910000077 silane Inorganic materials 0.000 claims description 6
- 238000005984 hydrogenation reaction Methods 0.000 claims description 4
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- UORVGPXVDQYIDP-UHFFFAOYSA-N borane Chemical compound B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010277 boron hydride Inorganic materials 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 239000011574 phosphorus Substances 0.000 claims description 3
- 229910000073 phosphorus hydride Inorganic materials 0.000 claims description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 8
- 239000007788 liquid Substances 0.000 abstract description 3
- 239000000463 material Substances 0.000 abstract description 3
- 239000000126 substance Substances 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 description 5
- 239000012528 membrane Substances 0.000 description 4
- 238000000354 decomposition reaction Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- KRQUFUKTQHISJB-YYADALCUSA-N 2-[(E)-N-[2-(4-chlorophenoxy)propoxy]-C-propylcarbonimidoyl]-3-hydroxy-5-(thian-3-yl)cyclohex-2-en-1-one Chemical compound CCC\C(=N/OCC(C)OC1=CC=C(Cl)C=C1)C1=C(O)CC(CC1=O)C1CCCSC1 KRQUFUKTQHISJB-YYADALCUSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000000518 rheometry Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Chemical Vapour Deposition (AREA)
Abstract
The utility model discloses a kind of vapor phase growing apparatus for making HIT silion cell, including plasma gas, the vacuum chamber equipped with entrance and exit, radio-frequency power supply, the inlet for being set to vacuum chamber and the gas box for being connected to atmosphere zone and vacuum room area, the electrode assembly, diversion trench, vacuum pump and the silicon substrate that are interlocked and be arranged side by side by several positive and negative electrodes, plasma gas enters gas box by the entrance of vacuum chamber, and gas box is equipped with several through-holes towards the indoor end face of vacuum；Electrode assembly is set to the lower section of gas box, and radio-frequency power supply radio-frequency electrode is electrically connected its positive electrode, and radio-frequency power supply ground electrode is electrically connected its negative electrode；Silicon substrate is set to the lower section of electrode assembly, is erected in above diversion trench；Diversion trench is set to the exit of vacuum chamber, and even in vacuum pump and vacuum chamber.Dry technique is walked completely by the HIT silion cell that the device of the utility model makes, and is not related to the processing of chemical liquids, clean hygiene, and be entirely full-automatic production, is reduced manpower and material resources, economization process.
Description
Technical field
The utility model relates to silion cell field, in particular to a kind of vapor phase growing apparatus for making HIT silion cell.
Background technique
HIT structure solar battery is a kind of electric using mixed type solar made of crystalline silicon substrates and amorphous silicon membrane
Pond, HIT structure (Heterojunction with intrinsic Thinlayer) is exactly in p-type amorphous silicon hydride and N-shaped hydrogen
Change and increase by one layer of undoped (intrinsic) hydrogenation non crystal silicon film between amorphous silicon and n-type silicon substrate).The conversion of HIT solar battery
Rate height is a kind of low high-efficiency battery, has the advantage being mutually equal to traditional silicon wafer solar battery.But HIT is made at present
The technique of structure solar battery is too complicated, and equipment is again expensive, strongly limits its commercial application value.
Utility model content
The main purpose of the utility model is to propose a kind of vapor phase growing apparatus for making HIT silion cell, it is intended to overcome with
Upper problem.
To achieve the above object, the utility model proposes a kind of vapor phase growing apparatus for making HIT silion cell, including etc.
Ionized gas, radio-frequency power supply, vacuum pump, the vacuum chamber equipped with entrance and exit and it is contained in the indoor gas box of vacuum, by several
Electrode assembly, diversion trench, the silicon substrate that positive and negative electrode interlocks and is arranged side by side, gas box are connected to the entrance of vacuum chamber, plasma (orifice) gas
Body enters gas box by the entrance of vacuum chamber, and gas box is equipped with several through-holes towards the indoor end face of vacuum；Electrode assembly is set to gas
The lower section of box, positive electrode connect radio-frequency power supply radio-frequency electrode, and negative electrode connects radio-frequency power supply ground electrode；Silicon substrate is set to electricity
The lower section of pole component, heavily fortified point are stood on above diversion trench；Diversion trench is set to the exit of vacuum chamber, and is connected to vacuum pump and vacuum chamber
It is interior.
Preferably, the vacuum chamber is additionally provided with gate, and the gate is set to the same transverse axis position of silicon substrate.
Preferably, the positive and negative electrode of the electrode assembly is made of the conductive metal of laminated structure.
Preferably, the two sides above the diversion trench are respectively equipped with several idler wheels, and the silicon substrate is removable by idler wheel
It is set to above diversion trench dynamicly.
Preferably, the diversion trench includes interconnected diversion chamber and drainage cylinder, and the drainage cylinder is fixed on diversion chamber
Bottom, stretch out vacuum chamber outlet connection vacuum pump；The diversion chamber includes grid lid and reflux space, and the grid lid is solid
Above diversion chamber, reflux space is thus formed below diversion chamber, the reflux space is connected with drainage cylinder.
Preferably, the silicon substrate is to use NF3After plasma progress surface passivating treatment uses hydrogen ion to bombard again
Silicon substrate.
Preferably, spacing≤15cm between the through-hole.
Preferably, the radio-frequency power supply is RF power supply, and the RF power supply applies high frequency between gas box and ionization grid and hands over
Rheology electromagnetic wave forms alternating electric field.
Preferably, further include that screen closes piece, if silicon substrate needs coating single side, screen is closed into the non-plated film that piece covers silicon substrate
Face.
Preferably, the plasma gas is the silane for being mixed with suitable hydrogenation phosphorus or boron hydride, and the silane is being worn
It is ionized the amorphous silicon film for being decomposed into N-type or p-type when crossing the electric field of radio-frequency power supply application, is deposited on silicon substrate surface.
Dry technique is walked completely by the HIT silion cell that the device of the utility model makes, and is not related to the processing of chemical liquids, is done
Net health, and be entirely full-automatic production, reduce manpower and material resources, economization process.
Detailed description of the invention
In order to illustrate the embodiment of the utility model or the technical proposal in the existing technology more clearly, below will be to embodiment
Or attached drawing needed to be used in the description of the prior art is briefly described, it should be apparent that, the accompanying drawings in the following description is only
It is some embodiments of the utility model, for those of ordinary skill in the art, in the premise not made the creative labor
Under, the structure that can also be shown according to these attached drawings obtains other attached drawings.
Fig. 1 is the structural schematic diagram of an embodiment of the present invention；
The embodiments will be further described with reference to the accompanying drawings for the realization, functional characteristics and advantage of the utility model aim.
Specific embodiment
The following will be combined with the drawings in the embodiments of the present invention, carries out the technical scheme in the embodiment of the utility model
Clearly and completely describing, it is clear that described embodiment is only a part of the embodiment of the utility model, rather than all
Embodiment.Based on the embodiments of the present invention, those of ordinary skill in the art are not making creative work premise
Under every other embodiment obtained, fall within the protection scope of the utility model.
It is to be appreciated that if related in the utility model embodiment directionality instruction (such as upper and lower, left and right, it is preceding,
Afterwards ...), then directionality instruction is only used for explaining opposite between each component under a certain particular pose (as shown in the picture)
Positional relationship, motion conditions etc., if the particular pose changes, directionality instruction is also correspondingly changed correspondingly.
In addition, if relating to the description of " first ", " second " etc. in the utility model embodiment, " first ", " the
Two " etc. description is used for description purposes only, and is not understood to indicate or imply its relative importance or is implicitly indicated meaning
The quantity of the technical characteristic shown." first " is defined as a result, the feature of " second " can explicitly or implicitly include at least one
A this feature.It in addition, the technical solution between each embodiment can be combined with each other, but must be with ordinary skill
Based on personnel can be realized, this technical side will be understood that when the combination of technical solution appearance is conflicting or cannot achieve
The combination of case is not present, also not within the protection scope of the requires of the utility model.
As shown in Figure 1, the utility model proposes a kind of vapor phase growing apparatus for making HIT silion cell, including plasma
If gas 1, radio-frequency power supply 3, vacuum pump 7, the vacuum chamber 2 equipped with entrance and exit and the gas box 4 being contained in vacuum chamber 2, by
Electrode assembly 5, diversion trench 6, the silicon substrate 8 that dry positive and negative electrode interlocks and is arranged side by side, gas box 4 are connected to the entrance of vacuum chamber 2,
Plasma gas 1 enters gas box 4 by the entrance of vacuum chamber 2, and gas box 4 is equipped with several through-holes 41 towards the end face in vacuum chamber 2；
Electrode assembly 5 is set to the lower section of gas box 4, and positive electrode connects 3 radio-frequency electrode of radio-frequency power supply, and negative electrode connects radio-frequency power supply 3
Ground electrode；Silicon substrate 8 is set to the lower section of electrode assembly 5, and heavily fortified point stands on 6 top of diversion trench；Diversion trench 6 is set to the outlet of vacuum chamber 2
Place, and be connected in vacuum pump 7 and vacuum chamber 2.
In the utility model embodiment, the plasma gas 1 of the utility model enters vacuum chamber by one end of gas box 4
In 2, since the outlet of vacuum chamber 2 is connected with vacuum pump 7, opens vacuum pump 7 and be evacuated, extract plasma gas 1 and pass through gas box 4
Plasma gas is injected into plasma gas molecules by through-hole 41, and the radio-frequency electrode connection electrode component 4 of radio-frequency power supply 3 is just
Electrode, the negative electrode of the ground electrode connection electrode component 4 of radio-frequency power supply 3, energization form ionized region, and plasma gas molecules pass through
As pumping direction drift is to silicon substrate 8 after electric field ionization decomposition of reciprocating vibration, or it is adhered to 8 surface of silicon substrate, or by leading
It is extracted out after chute 6 by vacuum pump 7, the plasma gas after decomposition is adhered to 8 surface of silicon substrate and deposits to form noncrystal membrane.Pass through
The HIT silion cell of the device production of the utility model walks dry technique completely, is not related to the processing of chemical liquids, clean hygiene, and
It is entirely full-automatic production, reduces manpower and material resources, economization process.
Preferably, the vacuum chamber 2 is additionally provided with gate 21, and the gate 21 is set to the same transverse axis position of silicon substrate
It sets.
In the utility model embodiment, gate 21 is arranged by vacuum chamber 2, that is, facilitates the replacement of silicon substrate 8, is also convenient for
Maintenance, cleaning.
Preferably, the positive and negative electrode of the electrode assembly 4 is made of the conductive metal of laminated structure.
In the utility model embodiment, positive and negative electrode uses the conductive metal of laminated structure to add the strong of strong electric field ionization
Degree.
Preferably, the diversion trench 6 is respectively equipped with several idler wheels 61, institute in the two sides with the same transverse axis of silicon substrate 8
It states silicon substrate 8 and 6 top of diversion trench is movably disposed in by idler wheel 61.
In the utility model embodiment, idler wheel 61 is set, silicon substrate 8 passes through idler wheel on the diversion trench 6 of the utility model
61 are movably disposed in 6 top of diversion trench, so that silicon substrate 8 passes in and out gate.
Preferably, the diversion trench 6 includes that diversion chamber is fixed in interconnected diversion chamber and drainage cylinder, the drainage cylinder
Bottom, stretch out vacuum chamber outlet connection vacuum pump；The diversion chamber includes grid lid and reflux space, and the grid lid is solid
Above diversion chamber, reflux space is thus formed below diversion chamber, the reflux space is connected with drainage cylinder.
In the utility model embodiment, further, prevent the imperfect flow of air-flow from causing the unevenness of noncrystal membrane
Even property, therefore the fixed-grid lid above diversion chamber, plasma gas are uniformly extracted.
Preferably, the silicon substrate 8 is to use NF3After plasma progress surface passivating treatment uses hydrogen ion to bombard again
Silicon substrate.
In the utility model embodiment, silicon substrate 8 uses NF3Plasma carries out surface passivating treatment and uses hydrogen ion again
Carry out the deposition of intrinsic silicon thin film after bombardment.
Preferably, spacing≤15cm between the through-hole 41.
In the utility model embodiment, by the setting of the small spacing of through-hole 41, plasma gas 1 is subdivided into plasma
Gas molecule spray is set to the aura area between gas box 4 and electrode assembly 5, carries out under the ionization of 3 alternating electric field of radio-frequency power supply empty
Between decompose.
Preferably, the radio-frequency power supply 3 is RF power supply, and the RF power supply applies high frequency between gas box 4 and electrode assembly 5
Exchange variation electromagnetic wave, forms alternating electric field.
Preferably, further include that screen closes piece, if silicon substrate needs coating single side, screen is closed into the non-plated film that piece covers silicon substrate
Face.
Preferably, the plasma gas 1 is the silane for being mixed with suitable hydrogenation phosphorus or boron hydride, and the silane is being worn
It is ionized the amorphous silicon film for being decomposed into N-type or p-type when crossing the electric field of radio-frequency power supply application, is deposited on 8 surface of silicon substrate.
In the utility model embodiment, the utility model is by inputting different plasma gas 1, in silicon substrate body surface
Face forms different noncrystal membrane or Multi-layer amorphous film.
The preferred embodiment of upper described only the utility model, therefore it does not limit the scope of the patent of the utility model, all
It is under the utility model design of the utility model, equivalent structure made based on the specification and figures of the utility model becomes
It changes, or directly/be used in other related technical areas indirectly and be included in the scope of patent protection of the utility model.
Claims (10)
1. make HIT silion cell vapor phase growing apparatus, which is characterized in that including plasma gas, radio-frequency power supply, vacuum pump,
It vacuum chamber equipped with entrance and exit and is contained in the indoor gas box of vacuum, interlocked and be arranged side by side by several positive and negative electrodes
Electrode assembly, diversion trench, silicon substrate, gas box are connected to the entrance of vacuum chamber, and plasma gas enters gas by the entrance of vacuum chamber
Box, gas box are equipped with several through-holes towards the indoor end face of vacuum；Electrode assembly is set to the lower section of gas box, and positive electrode connects radio frequency
Power supply radio-frequency electrode, negative electrode connect radio-frequency power supply ground electrode；Silicon substrate is set to the lower section of electrode assembly, is erected in diversion trench
Top；Diversion trench is set to the exit of vacuum chamber, and is connected in vacuum pump and vacuum chamber.
2. the vapor phase growing apparatus of production HIT silion cell as described in claim 1, which is characterized in that the vacuum chamber is also set
There is gate, the gate is set to the same transverse axis position of silicon substrate.
3. the vapor phase growing apparatus of production HIT silion cell as described in claim 1, which is characterized in that the electrode assembly
Positive and negative electrode is made of the conductive metal of laminated structure.
4. the vapor phase growing apparatus of production HIT silion cell as described in claim 1, which is characterized in that above the diversion trench
Two sides be respectively equipped with several idler wheels, the silicon substrate is movably disposed in above diversion trench by idler wheel.
5. the vapor phase growing apparatus of production HIT silion cell as described in claim 1, which is characterized in that the diversion trench includes
Interconnected diversion chamber and drainage cylinder, the drainage cylinder are fixed on the bottom of diversion chamber, and the outlet connection for stretching out vacuum chamber is true
Sky pump；The diversion chamber includes grid lid and reflux space, and the grid lid is fixed on above diversion chamber, thus under diversion chamber
It is rectangular at reflux space, the reflux space is connected with drainage cylinder.
6. the vapor phase growing apparatus of production HIT silion cell as described in claim 1, which is characterized in that the silicon substrate is to use
NF3Plasma carries out the silicon substrate after surface passivating treatment uses hydrogen ion to bombard again.
7. the vapor phase growing apparatus of production HIT silion cell as claimed in claim 4, which is characterized in that between the through-hole
Spacing≤15cm.
8. the vapor phase growing apparatus of production HIT silion cell as described in claim 1, which is characterized in that the radio-frequency power supply is
RF power supply, the RF power supply apply high-frequency ac between gas box and ionization grid and change electromagnetic wave, form alternating electric field.
9. as described in claim 1 production HIT silion cell vapor phase growing apparatus, which is characterized in that further include screen close piece, if
Silicon substrate needs coating single side, then screen is closed the non-coated surface that piece covers silicon substrate.
10. the vapor phase growing apparatus of production HIT silion cell as described in claim 1, which is characterized in that the plasma gas
For the silane for being mixed with suitable hydrogenation phosphorus or boron hydride, the silane is ionized point when passing through the electric field that radio-frequency power supply applies
Solution is N-type or P-type non-crystalline silicon film, is deposited on silicon substrate surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821892208.9U CN209227057U (en) | 2018-11-16 | 2018-11-16 | Make the vapor phase growing apparatus of HIT silion cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821892208.9U CN209227057U (en) | 2018-11-16 | 2018-11-16 | Make the vapor phase growing apparatus of HIT silion cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN209227057U true CN209227057U (en) | 2019-08-09 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201821892208.9U Expired - Fee Related CN209227057U (en) | 2018-11-16 | 2018-11-16 | Make the vapor phase growing apparatus of HIT silion cell |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN209227057U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109957786A (en) * | 2018-11-16 | 2019-07-02 | 黄剑鸣 | A kind of vapor phase growing apparatus making HIT silion cell |
| CN112831772A (en) * | 2021-03-02 | 2021-05-25 | 黄剑鸣 | Double-sided plasma enhanced chemical vapor deposition structure and deposition device |
-
2018
- 2018-11-16 CN CN201821892208.9U patent/CN209227057U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109957786A (en) * | 2018-11-16 | 2019-07-02 | 黄剑鸣 | A kind of vapor phase growing apparatus making HIT silion cell |
| CN112831772A (en) * | 2021-03-02 | 2021-05-25 | 黄剑鸣 | Double-sided plasma enhanced chemical vapor deposition structure and deposition device |
| CN112831772B (en) * | 2021-03-02 | 2023-02-14 | 黄剑鸣 | Double-sided plasma enhanced chemical vapor deposition structure and deposition device |
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| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20190809 |