CN209098847U - Kyropoulos sapphire seed crystal protective device - Google Patents
Kyropoulos sapphire seed crystal protective device Download PDFInfo
- Publication number
- CN209098847U CN209098847U CN201820505852.XU CN201820505852U CN209098847U CN 209098847 U CN209098847 U CN 209098847U CN 201820505852 U CN201820505852 U CN 201820505852U CN 209098847 U CN209098847 U CN 209098847U
- Authority
- CN
- China
- Prior art keywords
- seed crystal
- baffle plate
- kyropoulos
- isolation baffle
- protective device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 49
- 229910052594 sapphire Inorganic materials 0.000 title claims abstract description 26
- 239000010980 sapphire Substances 0.000 title claims abstract description 26
- 230000001681 protective effect Effects 0.000 title claims abstract description 14
- 238000002955 isolation Methods 0.000 claims abstract description 23
- 239000000463 material Substances 0.000 claims description 8
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims 1
- 229910001930 tungsten oxide Inorganic materials 0.000 claims 1
- 229910001928 zirconium oxide Inorganic materials 0.000 claims 1
- 238000005260 corrosion Methods 0.000 abstract description 4
- 230000007797 corrosion Effects 0.000 abstract description 4
- 238000011081 inoculation Methods 0.000 abstract description 4
- 239000012774 insulation material Substances 0.000 abstract description 4
- 238000011109 contamination Methods 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 7
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The utility model relates to kyropoulos sapphire crystal growing furnace fields, it is desirable to provide a kind of sapphire seed crystal protective device.The device includes three mechanical handle, rotation axis and isolation baffle plate main elements: mechanical handle is placed in outside Kyropoulos furnace tegillum, is connect by rotation axis with isolation baffle plate；Isolation baffle plate is placed in tegillum bottom at seed crystal, the hole of area covering seed rod liftway.The device realizes the closing and unlatching of liftway by the rotation control isolation baffle plate of mechanical handle, avoid the volatilization of burner hearth inner heat body and thermal insulation material at high temperature to the corrosion contamination of sapphire seed crystal, inoculation efficiency is improved, the quality and yield rate of kyropoulos sapphire crystal can be significantly improved.
Description
Technical field
The utility model relates to sapphire crystal growth device, especially a kind of kyropoulos sapphire seed crystal protective device,
Belong to the technical field of crystal preparation.
Background technique
Critical component of the sapphire crystal as current semiconductor illuminating industry is the important substrate of blue light and white light LEDs
The growth preparation of material, large scale, high quality is the basis of industry development.It is brilliant to have accomplished in many ways sapphire at present
Prepared by the growth of body, including kyropoulos, heat-exchanging method, EFG technique, czochralski method, Bridgman-Stockbarger method etc..Kyropoulos can grow ruler
Very little biggish sapphire crystal and equipment cost relative moderate are considered to be most suitable for large-scale production sapphire crystal in the industry
Method.Existing kyropoulos, such as the patent document of Publication No. CN105088333A and Patent No. CN205603721U institute
Device is stated, seed crystal is commonly exposed to the top of heater and thermal insulation material, in temperature increasing for melting materials and overheat stage, heater, heat preservation
Material and melt, which decompose volatile matter, can be adhered to seed crystal face, and then corrosion contamination seed crystal.Big ruler is carried out with the seed crystal being infected with
When prepared by very little crystal growth, easily crystal quality is caused to decline, the defects of crystal boundary, scattering, package occurs, reduce the finished product of product
Rate and utilization rate.
Summary of the invention
Aiming at the problem that seed crystal in sapphire crystal growth pollutes, the utility model provides a kind of kyropoulos sapphire seed crystal
Protective device.
The technical solution of the utility model is as follows:
A kind of kyropoulos sapphire seed crystal protective device, including three mechanical handle, rotation axis and isolation baffle plate main parts
Part, it is characterised in that: the mechanical handle is placed in outside Kyropoulos furnace tegillum, is connect by rotation axis with isolation baffle plate, is realized
Rotation control to isolation baffle plate；The isolation baffle plate is placed in tegillum bottom at seed crystal, the lifting of area covering seed rod
The hole in channel, and the closing and unlatching to channel are realized by rotation.
The mechanical handle is limited by two pieces of limited blocks, the line of centres angle theta of limited block and rotation axis
Range is 90 °≤θ≤180 °.
The isolation baffle plate is made of tungsten or other heat-resisting materials.
The technical effect of the utility model is: the rotation by mechanical handle controls isolation baffle plate, in temperature increasing for melting materials and melt
Body overheats the stage, closes seed crystal liftway, so that seed crystal is not exposed to the top of heater and thermal insulation material, avoid it in height
Volatile matter under temperature is to the corrosion contamination of seed crystal.When needing to carry out crystal growth, isolation baffle plate is rotated by mechanical handle, is opened
It opens seed crystal liftway and completes seed crystal inoculation work.Due to the arrangement achieves the protection to the anti-pollution corrosion of sapphire seed crystal,
The high-quality for ensuring seed crystal is remarkably improved inoculation efficiency, improves quality, yield rate and the utilization of kyropoulos sapphire crystal
Rate reduces production cost.
Detailed description of the invention
Fig. 1 is the main view of kyropoulos sapphire seed crystal protective device.
Fig. 2 is the top view of kyropoulos sapphire seed crystal protective device.
Fig. 3 is that structural schematic diagram of the kyropoulos sapphire seed crystal protective device when installing and using is (left: to go up and down to seed rod
It opens in channel；It is right: seed rod liftway is closed).
Description of symbols: 1. mechanical handles, 2. rotation axis, 3. isolation baffle plates, 4. limited blocks, 5. seed rods, 6. bubbles
Raw furnace tegillum.
Specific embodiment
Below with reference to specific drawings and examples, the utility model is described in further detail.
The utility model discloses a kind of kyropoulos sapphire seed crystal protective devices, including mechanical handle (1), rotation axis
(2) and (3) three main elements of isolation baffle plate, the mechanical handle (1) are placed in outside Kyropoulos furnace tegillum (6), pass through rotation axis
(2) it is connect with isolation baffle plate (3), realizes that the rotation to isolation baffle plate (3) controls；The isolation baffle plate (3) is placed in tegillum (6) bottom
Portion is at seed crystal, the hole of area covering seed rod (5) liftway, and passes through the closing rotated realize to channel and open
It opens；The mechanical handle (1) is limited by two pieces of limited blocks (4), the line of centres of limited block (4) and rotation axis (2)
Angle theta range is 90 °≤θ≤180 °；The isolation baffle plate (3) is made of tungsten or other heat-resisting materials.
The course of work of the utility model kyropoulos sapphire seed crystal protective device is as follows: in temperature increasing for melting materials, bubble being given birth to
Method seed rod is placed in upper furnace by liftway lifting, shakes the mechanical handle in utility model device, control isolation
Baffle makes seed crystal be not exposed to the top of heater and thermal insulation material to close seed crystal liftway；After melt overheat,
Mechanical handle is shaken in the opposite direction controls isolation baffle plate, it is slowly that seed crystal contact melt is complete to open seed crystal liftway
At inoculation work；The suitable lifting of setting, temperature control or power contorl parameters, realize high quality kyropoulos sapphire crystal
Growth.
Above-described embodiment is the explanation to the utility model, is not the restriction to the utility model, and any pair of sheet is practical new
Scheme after type simple transformation belongs to the protection scope of the utility model.
Claims (3)
1. kyropoulos sapphire seed crystal protective device, including (3) three mechanical handle (1), rotation axis (2) and isolation baffle plate main bodys
Component, it is characterised in that: the mechanical handle (1) is placed in outside Kyropoulos furnace tegillum (6), is kept off by rotation axis (2) with being isolated
Plate (3) connection realizes that the rotation to isolation baffle plate (3) controls；The isolation baffle plate (3) is placed in Kyropoulos furnace tegillum (6) bottom
At seed crystal, the hole of area covering seed rod (5) liftway, and pass through the closing and unlatching in rotation realization channel.
2. kyropoulos sapphire seed crystal protective device according to claim 1, it is characterised in that: the mechanical handle
(1) limited by two pieces of limited blocks (4), the line of centres angle theta range of limited block (4) and rotation axis (2) be 90 ° extremely
180°。
3. kyropoulos sapphire seed crystal protective device according to claim 1, it is characterised in that: the isolation baffle plate
(3) it is made of tungsten or zirconium oxide heat-resisting material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820505852.XU CN209098847U (en) | 2018-04-11 | 2018-04-11 | Kyropoulos sapphire seed crystal protective device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820505852.XU CN209098847U (en) | 2018-04-11 | 2018-04-11 | Kyropoulos sapphire seed crystal protective device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN209098847U true CN209098847U (en) | 2019-07-12 |
Family
ID=67148480
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201820505852.XU Expired - Fee Related CN209098847U (en) | 2018-04-11 | 2018-04-11 | Kyropoulos sapphire seed crystal protective device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN209098847U (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116926660A (en) * | 2023-09-18 | 2023-10-24 | 内蒙古晶环电子材料有限公司 | Sapphire crystal growth furnace |
| CN116949559A (en) * | 2023-09-18 | 2023-10-27 | 内蒙古晶环电子材料有限公司 | Sapphire crystal growth furnace |
| CN116949558A (en) * | 2023-09-18 | 2023-10-27 | 内蒙古晶环电子材料有限公司 | Sapphire lifting shaft and sapphire crystal growth furnace |
| CN116949557A (en) * | 2023-09-18 | 2023-10-27 | 内蒙古晶环电子材料有限公司 | Thermal insulation structure and sapphire crystal growth furnace |
| CN116949560A (en) * | 2023-09-18 | 2023-10-27 | 内蒙古晶环电子材料有限公司 | Sapphire crystal growth furnace |
-
2018
- 2018-04-11 CN CN201820505852.XU patent/CN209098847U/en not_active Expired - Fee Related
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116926660A (en) * | 2023-09-18 | 2023-10-24 | 内蒙古晶环电子材料有限公司 | Sapphire crystal growth furnace |
| CN116949559A (en) * | 2023-09-18 | 2023-10-27 | 内蒙古晶环电子材料有限公司 | Sapphire crystal growth furnace |
| CN116949558A (en) * | 2023-09-18 | 2023-10-27 | 内蒙古晶环电子材料有限公司 | Sapphire lifting shaft and sapphire crystal growth furnace |
| CN116949557A (en) * | 2023-09-18 | 2023-10-27 | 内蒙古晶环电子材料有限公司 | Thermal insulation structure and sapphire crystal growth furnace |
| CN116949560A (en) * | 2023-09-18 | 2023-10-27 | 内蒙古晶环电子材料有限公司 | Sapphire crystal growth furnace |
| CN116926660B (en) * | 2023-09-18 | 2024-01-30 | 内蒙古晶环电子材料有限公司 | Sapphire crystal growth furnace |
| CN116949557B (en) * | 2023-09-18 | 2024-02-13 | 内蒙古晶环电子材料有限公司 | Thermal insulation structure and sapphire crystal growth furnace |
| CN116949558B (en) * | 2023-09-18 | 2024-02-13 | 内蒙古晶环电子材料有限公司 | Sapphire lifting shaft and sapphire crystal growth furnace |
| CN116949560B (en) * | 2023-09-18 | 2024-03-01 | 内蒙古晶环电子材料有限公司 | Sapphire crystal growth furnace |
| CN116949559B (en) * | 2023-09-18 | 2024-03-12 | 内蒙古晶环电子材料有限公司 | Sapphire crystal growth furnace |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20190712 |