CN209029389U - Wafer-level packaging infrared detector - Google Patents
Wafer-level packaging infrared detector Download PDFInfo
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- CN209029389U CN209029389U CN201821840653.0U CN201821840653U CN209029389U CN 209029389 U CN209029389 U CN 209029389U CN 201821840653 U CN201821840653 U CN 201821840653U CN 209029389 U CN209029389 U CN 209029389U
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- infrared
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- nut cap
- packing ring
- level packaging
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Abstract
The utility model provides a kind of wafer-level packaging infrared detector, is related to infrared detector technical field.Comprising: nut cap, infrared image element substrate and infrared-sensitive pixel；Infrared image element substrate is equipped with the second metallic packing ring, nut cap is the silicon window transparent to 8~14 μm of infrared bands, nut cap is equipped with the first metallic packing ring, first metallic packing ring and the second metallic packing ring are welded by solder layer vacuum bonding, so that nut cap and infrared image element substrate seal and have a chamber；Infrared-sensitive pixel is arranged on the indoor infrared image element substrate of chamber and is electrically connected with the reading circuit of infrared image element substrate；Nut cap is etched with a groove relative to infrared-sensitive pixel side to form nut cap window, and groove inner peripheral wall is equipped with getter layer.A kind of wafer-level packaging infrared detector provided by the utility model realizes full wafer detector Vacuum Package by fusion welding using silicon window cover cap, two wafer of infrared image element substrate, to realize more inexpensive detection system.
Description
Technical field
The utility model relates to infrared detector technical fields, more particularly to a kind of wafer-level packaging infrared detector.
Background technique
Any object all can outwardly emit infra-red electromagnetic heat radiation, the light wave range of this radiation more than degree zero degree absolutely
It is approximately 0.8~1000 μm, it can not be visible directly for human eye.The infrared radiation detector of infrared waves can be detected, by spy
It surveys principle and is divided into photon type and thermosensitive resistance type detector.Photon type needs work in the environment that liquid nitrogen (about 77K) freezes, and
Thermosensitive resistance type detector is usually operated at room temperature, is kind of " non-refrigeration type " detector, multiple this kind of detector cells pixel
(such as 384 × 288,640 × 480) arrangement on a chip substrate, then constitutes uncooled ir battle array in the form of two-dimensional array
Row detector (IRFPA).
For non-refrigerated infrared detector, work typical wave band are as follows: 8~14 μm.(300K) at normal temperature, black body radiation
Emission spectra central wavelength is just near 10 mu m wavebands；And other objects similar in temperature are emitted in human body and environment
Infrared emanation, 38% energy concentrate in 8~14 μ m of wavelength, the wave band be more suitable for sunburst, pitch-dark night or
Detection under bad weather needs.
For non-refrigerated infrared detector, there is no a liquid nitrogen refrigerating mechanism, it is smaller than refrigeration-type detector in volume, it is low in energy consumption,
Price advantage is more apparent, so that it is in video monitoring, fire-fighting search and rescue, power grid thermometric, medical pathology, auxiliary drives, individual soldier's rifle is taken aim at
The use of the helmet etc. has irreplaceable advantage.
But at present non-refrigerated infrared detector also with metal can valve (Kovar) shell, ceramic cartridge encapsulation based on, individually
The use of shell itself and temperature control device (TEC), cylindric getter (Getter) so that encapsulation after price 70% with
In encapsulation, detector advantage is difficult to fully demonstrate upper price.And before encapsulating, infrared image element substrate is cut into first
Single chip encapsulates quantity every time and is limited in about 10, also becomes the bottleneck produced in enormous quantities.
Utility model content
One purpose of the utility model is to provide for a kind of wafer-level packaging infrared detector, is asked with solving above-mentioned technology
Topic realizes full wafer detector Vacuum Package by fusion welding using silicon window cover cap, two wafer of infrared image element substrate, thus real
Now more inexpensive detection system.
Particularly, the utility model provides a kind of wafer-level packaging infrared detector, comprising: nut cap, infrared image element lining
Bottom and infrared-sensitive pixel；The infrared image element substrate is equipped with the second metallic packing ring, and the nut cap is infrared to 8~14 μm
The transparent silicon window of wave band, the nut cap are equipped with the first metallic packing ring, first metallic packing ring and second metal
Sealing ring is welded by solder layer vacuum bonding, so that the nut cap and the infrared image element substrate seal and have a chamber
Room；The infrared-sensitive pixel be arranged on the indoor infrared image element substrate of the chamber and with the infrared image element substrate
Reading circuit electrical connection；The nut cap is etched with a groove relative to infrared-sensitive pixel side to form nut cap window,
The groove inner peripheral wall is equipped with getter layer.
Optionally, the nut cap is that 8~14 mu m wavebands are absorbed with lower magnetic confinement progress in Czochralski silicon or floating band silicon.
Optionally, the front of the nut cap window and or the back side be coated with the anti-reflective film layer of infrared transmission.
Optionally, the anti-reflective film layer is that zinc sulphide, zinc selenide and germanium material are one of or a variety of.
Optionally, the structure height of the groove is 10~500 μm.
Optionally, first metallic packing ring and second metallic packing ring respectively include metal adhesion layers, stop
Layer and anti oxidation layer.
Optionally, first metallic packing ring and second metallic packing ring be titanium/titanium nitride/gold, titanium/platinum/
One of gold, titanium/ni au.
Optionally, the solder layer is one of tin, gold/tin, tin/lead, tin silver, tin silver/copper, indium/lead.
Optionally, the solder layer with a thickness of 1~50 μm.
Optionally, the material of the getter layer is one of titanium, titanium-zirconium alloy, titanium zirconium vanadium alloy or aluminium barium alloy.
A kind of wafer-level packaging infrared detector provided by the utility model, wafer-level packaging are that two wafers participate in envelope
Dress, substrate wafer respectively where nut cap wafer and infrared image element as IR transmissive window.Two wafers can lead to
Cross the production of semiconductor conventional method.Two wafers are bonded together in vacuum environment by fusion welding, save cost,
Element of time.
A kind of wafer-level packaging infrared detector provided by the utility model is sealed for non-refrigerated infrared detector wafer scale
Dress, is made of nut cap, infrared image element substrate and infrared-sensitive pixel.Nut cap wafer is less in 8~14 μm of infrared band losses
Magnetic confinement progress in Czochralski silicon (MCZ silicon) or floating band silicon (FZ silicon).The anti-reflective film ARC layer of infrared transmission is deposited in surface, thus into
The transmission of one step increase infrared light；Nut cap backside of wafer etched recesses structure, for do nut cap wafer and infrared image element every
Sow discord gap；Nut cap backside deposition has metallic packing ring, including a metal adhesion layers, barrier layer, anti oxidation layer, respectively e.g. Ti/
Pt/Au or Ti/Ni/Au combines metal material；Sealing ring electroplated on top thickness metal such as Sn or Au/Sn, thickness is about
It is about 10 μm；Vapor deposition or sputtering getter material, titanium or titanium-zirconium alloy or titanium zirconium vanadium alloy inside groove, in order to
Residual gas is absorbed to keep, improve encapsulated vacuum degree.In infrared image element substrate wafer, reading circuit, infrared-sensitive are prepared
Pixel structure and metallic packing ring.In bonding apparatus, the sealing ring of two wafers is aligned, heating, Au/Sn melt solder
Two wafers bonding is at an entirety afterwards, after scribing, is cleaved into single infrared chip so as to imaging system use.
According to the accompanying drawings to the detailed description of the utility model specific embodiment, those skilled in the art will be more
Add the above-mentioned and other purposes, advantages and features of clear the utility model.
Detailed description of the invention
Some specific realities of the utility model are described in detail by way of example and not limitation with reference to the accompanying drawings hereinafter
Apply example.Identical appended drawing reference denotes same or similar part or part in attached drawing.It should be appreciated by those skilled in the art that
The drawings are not necessarily drawn to scale.In attached drawing:
Fig. 1 is a kind of schematic diagram of wafer-level packaging infrared detector of the utility model one embodiment；
Fig. 2 is a kind of schematic structure of wafer-level packaging infrared detector of another embodiment of the utility model
Figure.
Specific embodiment
Fig. 1 is a kind of schematic diagram of wafer-level packaging infrared detector of the utility model one embodiment.Such as
Shown in Fig. 1, a kind of wafer-level packaging infrared detector generally may include: nut cap 1, infrared image element substrate 201 and infrared quick
Feel pixel 203.
Infrared image element substrate 201 is equipped with the second metallic packing ring 202.Nut cap 1 is transparent to 8~14 μm of infrared bands
Silicon window.Nut cap 1 is equipped with the first metallic packing ring 102.First metallic packing ring 102 and the second metallic packing ring 202 pass through weldering
104 vacuum bonding of bed of material welding, so that nut cap 1 and infrared image element substrate 201 seal and have a chamber.Infrared-sensitive pixel
203 are arranged on the indoor infrared image element substrate 201 of chamber, and are electrically connected with the reading circuit of infrared image element substrate 201.Nut cap 1
A groove 103 is etched with relative to 203 side of infrared-sensitive pixel to form nut cap window.Groove inner peripheral wall is equipped with getter
Layer.
Specifically, nut cap 1 is to absorb lower magnetic confinement progress in Czochralski silicon (MCZ silicon, Magnetically to 8~14 mu m wavebands
Confined Czochralski silicon) or floating band silicon (FZ silicon, Float Zone silicon).Generally, nut cap 1
As infrared light transmission window, oxygen content is lower, usually High Resistivity Si.
First metallic packing ring 102 and the second metallic packing ring 202 respectively include metal adhesion layers, barrier layer and anti-oxidant
Layer.The material of first metallic packing ring 102 and the second metallic packing ring 202 be titanium/titanium nitride/gold, titanium/platinum/gold, titanium/nickel/
One of gold.Optionally, the first metallic packing ring of backside deposition 102 of 1 silicon window of nut cap, and pass through etching, removing
(lift-off) mode realizes the graphical of the first metallic packing ring 102.First metallic packing ring 102 generally titanium/titanium nitride/
Gold (Ti/TiN/Au), titanium/platinum/gold (Ti/Pt/Au), titanium/ni au (Ti/Ni/Au).In a specific embodiment,
Metallic packing ring 102 is Ti/Ni/Au, and thickness corresponds to 2000/2500/1500.It is to be understood that the present invention does not limit to
Material and thickness in the implementation case.
Solder layer is one of tin, gold/tin, tin/lead, tin silver, tin silver/copper, indium/lead.Solder layer with a thickness of 1~
50μm.Optionally, solder layer 104 is deposited by way of plating.Solder layer 104 is tin (Sn), gold/tin (Au/Sn), tin/lead
(Sn/Pb), tin silver (Sn/Ag), tin silver/copper (Sn/Ag/Cu), indium/lead (In/Pb) etc.;With a thickness of in 1~50 μ m.?
In one specific embodiment, 104 material of solder layer is gold/tin (Au/Sn), and typical thickness is 10 μm.It is to be understood that
The present invention is not limited to material and thickness in the implementation case.
103 structure of groove, for doing the vacuum insulation gap of nut cap wafer Yu infrared image element substrate, depth is 10~500 μ
Within the scope of m.In a specific embodiment, representative value is 100 μm.The present invention is not limited to height in the implementation case.
103 structure of groove can etch (DRIE) mode by deep silicon plasma reaction and realize.In a specific embodiment, groove
103 structures realize that side wall is substantially vertical by the deep silicon dry etch process that SPTS DRIE is provided, and etching height can pass through quarter
Erosion time, etch rate control.Getter layer 106 is attached in the groove 103 at 1 back side of nut cap.Getter layer film activation
Afterwards, the residual gas after caning absorb encapsulation is to keep, improve encapsulated vacuum degree.106 material of getter layer is that titanium or titanium zirconium close
Gold or titanium zirconium vanadium alloy or aluminium barium alloy.
In a specific embodiment, as shown in Fig. 2, 1 window of nut cap front and or the back side be coated with infrared transmission
Anti-reflective film layer 105.Optionally, 105 layers of the anti-reflective film (ARC) that nut cap silicon window is positive, the back side is coated with infrared transmission；
105 layers of the anti-reflective film (ARC) for zinc sulphide (ZnS), zinc selenide (ZnSe) and germanium (Ge) material one of which or it is a variety of.?
In one specific embodiment, anti-reflective film (ARC) 105 is zinc sulphide (ZnS), germanium (Ge) alternate combinations film layer.It is infrared anti-
105 plated film of reflectance coating (ARC) can be realized by the modes such as sputtering, being deposited.It can graphically pass through dry etching, removing (lift-
Off) mode is realized.In a specific embodiment, infrared antireflective film (ARC) 105 plated film, plated film by way of vapor deposition
When realized by stripping technology (lift-off) it is graphical.
A kind of wafer-level packaging infrared detector provided by the utility model, on 201 wafer of infrared image element substrate, system
Standby reading circuit, infrared-sensitive pixel structure 203 and metallic packing ring 202.Infrared image element structure 203 perceives extraneous target
Infrared information and be converted into the accessible voltage signal of reading circuit.Metallic packing ring 202 on infrared image element substrate 201,
It is realized graphically by etching, removing (lift-off) mode.Metallic packing ring 202 is generally titanium/titanium nitride/gold (Ti/TiN/
Au), titanium/platinum/gold (Ti/Pt/Au), titanium/ni au (Ti/Ni/Au).In a specific embodiment, metallic packing ring
202 be Ti/Ni/Au, and thickness corresponds to 2000/2500/3500.It is to be understood that the present invention is not limited to this implementation case
Material and thickness in example.
A kind of wafer-level packaging infrared detector provided by the utility model in bonding apparatus, is taken out during the preparation process
Heat activation first is carried out to 106 film layer of getter in 101 groove of nut cap wafer after vacuum；Then, the sealing ring of two wafers
Alignment, the Au/Sn solder of melting make two wafers bonding at (bonding) entirety.In the implementation case, bonding apparatus
For EVG group.
A kind of wafer-level packaging infrared detector provided by the utility model, wafer-level packaging are that two wafers participate in envelope
Dress, substrate wafer respectively where nut cap wafer and infrared image element as IR transmissive window.Two wafers can lead to
Cross the production of semiconductor conventional method.Two wafers are bonded together in vacuum environment by fusion welding, save cost,
Element of time.
A kind of wafer-level packaging infrared detector provided by the utility model is sealed for non-refrigerated infrared detector wafer scale
Dress, is made of nut cap, infrared image element substrate and infrared-sensitive pixel.Nut cap wafer is less in 8~14 μm of infrared band losses
Magnetic confinement progress in Czochralski silicon (MCZ silicon) or floating band silicon (FZ silicon).The anti-reflective film ARC layer of infrared transmission is deposited in surface, thus into
The transmission of one step increase infrared light；Nut cap backside of wafer etched recesses structure, for do nut cap wafer and infrared image element every
Sow discord gap；Nut cap backside deposition has metallic packing ring, including a metal adhesion layers, barrier layer, anti oxidation layer, respectively e.g. Ti/
Pt/Au or Ti/Ni/Au combines metal material；Sealing ring electroplated on top thickness metal such as Sn or Au/Sn, thickness is about
It is about 10 μm；Vapor deposition or sputtering getter material, titanium or titanium-zirconium alloy or titanium zirconium vanadium alloy inside groove, in order to
Residual gas is absorbed to keep, improve encapsulated vacuum degree.In infrared image element substrate wafer, reading circuit, infrared-sensitive are prepared
Pixel structure and metallic packing ring.In bonding apparatus, the sealing ring of two wafers is aligned, heating, Au/Sn melt solder
Two wafers bonding is at an entirety afterwards, after scribing, is cleaved into single infrared chip so as to imaging system use.
So far, although those skilled in the art will appreciate that the more of the utility model have been shown and described in detail herein
A exemplary embodiment still, still can be according to the utility model public affairs in the case where not departing from the spirit and scope of the utility model
The content opened directly determines or derives many other variations or modifications for meeting the utility model principle.Therefore, this is practical new
The range of type is understood that and regards as to cover all such other variations or modifications.
Claims (10)
1. a kind of wafer-level packaging infrared detector characterized by comprising nut cap, infrared image element substrate and infrared-sensitive picture
Member；The infrared image element substrate is equipped with the second metallic packing ring, and the nut cap is the silicon window transparent to 8~14 μm of infrared bands
Mouthful, the nut cap is equipped with the first metallic packing ring, and first metallic packing ring and second metallic packing ring pass through solder
Layer vacuum bonding welding, so that the nut cap and the infrared image element substrate seal and have a chamber；The infrared-sensitive
Pixel is arranged on the indoor infrared image element substrate of the chamber and is electrically connected with the reading circuit of the infrared image element substrate；
The nut cap is etched with a groove relative to infrared-sensitive pixel side to form nut cap window, the groove inner peripheral wall
Equipped with getter layer.
2. wafer-level packaging infrared detector according to claim 1, which is characterized in that the nut cap is to 8~14 μm
Wave band absorbs lower magnetic confinement progress in Czochralski silicon or floating band silicon.
3. wafer-level packaging infrared detector according to claim 1, which is characterized in that the front of the nut cap window
With or the back side be coated with the anti-reflective film layer of infrared transmission.
4. wafer-level packaging infrared detector according to claim 3, which is characterized in that the anti-reflective film layer is vulcanization
Zinc, zinc selenide and germanium material are one of or a variety of.
5. wafer-level packaging infrared detector according to claim 1, which is characterized in that the structure height of the groove is
10~500 μm.
6. wafer-level packaging infrared detector according to claim 1, which is characterized in that first metallic packing ring and
Second metallic packing ring respectively includes metal adhesion layers, barrier layer and anti oxidation layer.
7. wafer-level packaging infrared detector according to claim 6, which is characterized in that first metallic packing ring and
The material of second metallic packing ring is one of titanium/titanium nitride/gold, titanium/platinum/gold, titanium/ni au.
8. wafer-level packaging infrared detector according to claim 1, which is characterized in that the solder layer be tin, gold/
One of tin, tin/lead, tin silver, tin silver/copper, indium/lead.
9. wafer-level packaging infrared detector according to claim 8, which is characterized in that the solder layer with a thickness of 1
~50 μm.
10. wafer-level packaging infrared detector according to claim 1, which is characterized in that the material of the getter layer
For one of titanium, titanium-zirconium alloy, titanium zirconium vanadium alloy or aluminium barium alloy.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201821840653.0U CN209029389U (en) | 2018-11-09 | 2018-11-09 | Wafer-level packaging infrared detector |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821840653.0U CN209029389U (en) | 2018-11-09 | 2018-11-09 | Wafer-level packaging infrared detector |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111664950A (en) * | 2020-04-26 | 2020-09-15 | 杭州大立微电子有限公司 | Infrared detector and preparation method and application thereof |
| CN115072652A (en) * | 2022-07-19 | 2022-09-20 | 武汉高芯科技有限公司 | Infrared detector chip packaging structure |
| CN115353066A (en) * | 2022-08-25 | 2022-11-18 | 武汉高芯科技有限公司 | Uncooled infrared wafer-level packaging detector |
| CN115367692A (en) * | 2022-08-25 | 2022-11-22 | 武汉高芯科技有限公司 | Non-refrigeration infrared detector getter electric activation structure and preparation method thereof |
| CN116520462A (en) * | 2023-06-20 | 2023-08-01 | 杭州海康微影传感科技有限公司 | Optical window, manufacturing method thereof, infrared sensor and optical window wafer |
| WO2024067713A1 (en) * | 2022-09-29 | 2024-04-04 | 杭州海康微影传感科技有限公司 | Wafer-level packaging structure, manufacturing method therefor, and sensor |
-
2018
- 2018-11-09 CN CN201821840653.0U patent/CN209029389U/en active Active
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111664950A (en) * | 2020-04-26 | 2020-09-15 | 杭州大立微电子有限公司 | Infrared detector and preparation method and application thereof |
| CN111664950B (en) * | 2020-04-26 | 2021-11-05 | 杭州大立微电子有限公司 | Infrared detector and preparation method and application thereof |
| CN115072652A (en) * | 2022-07-19 | 2022-09-20 | 武汉高芯科技有限公司 | Infrared detector chip packaging structure |
| CN115072652B (en) * | 2022-07-19 | 2023-02-03 | 武汉高芯科技有限公司 | Infrared detector chip packaging structure |
| CN115353066A (en) * | 2022-08-25 | 2022-11-18 | 武汉高芯科技有限公司 | Uncooled infrared wafer-level packaging detector |
| CN115367692A (en) * | 2022-08-25 | 2022-11-22 | 武汉高芯科技有限公司 | Non-refrigeration infrared detector getter electric activation structure and preparation method thereof |
| WO2024067713A1 (en) * | 2022-09-29 | 2024-04-04 | 杭州海康微影传感科技有限公司 | Wafer-level packaging structure, manufacturing method therefor, and sensor |
| CN116520462A (en) * | 2023-06-20 | 2023-08-01 | 杭州海康微影传感科技有限公司 | Optical window, manufacturing method thereof, infrared sensor and optical window wafer |
| CN116520462B (en) * | 2023-06-20 | 2024-01-05 | 杭州海康微影传感科技有限公司 | Optical window, manufacturing method thereof, infrared sensor and optical window wafer |
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