CN208985992U - A kind of solar battery of high conversion efficiency - Google Patents
A kind of solar battery of high conversion efficiency Download PDFInfo
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- CN208985992U CN208985992U CN201821713610.6U CN201821713610U CN208985992U CN 208985992 U CN208985992 U CN 208985992U CN 201821713610 U CN201821713610 U CN 201821713610U CN 208985992 U CN208985992 U CN 208985992U
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 33
- 239000000463 material Substances 0.000 claims abstract description 47
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 28
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 27
- 230000005684 electric field Effects 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 9
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- FPIPGXGPPPQFEQ-OVSJKPMPSA-N all-trans-retinol Chemical compound OC\C=C(/C)\C=C\C=C(/C)\C=C\C1=C(C)CCCC1(C)C FPIPGXGPPPQFEQ-OVSJKPMPSA-N 0.000 claims description 4
- 230000007423 decrease Effects 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 239000011717 all-trans-retinol Substances 0.000 claims description 2
- 235000019169 all-trans-retinol Nutrition 0.000 claims description 2
- 238000009792 diffusion process Methods 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 2
- 230000003667 anti-reflective effect Effects 0.000 claims 1
- 230000005611 electricity Effects 0.000 claims 1
- 238000010521 absorption reaction Methods 0.000 abstract description 4
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
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- Photovoltaic Devices (AREA)
Abstract
The utility model discloses a kind of solar batteries of high conversion efficiency, including anti-reflecting layer, the perovskite material bed of material, TiO being from top to bottom cascading2Layer, iii-v solar battery and DBR layer.The solar battery of the high conversion efficiency of the utility model, which is increased on the basis of iii-v solar battery using anti-reflecting layer, receives the absorption that light quantity, perovskite material bed of material absorption luminous energy and DBR layer increase long wavelength part light, transfer efficiency is further improved, it is with important application prospects in area of solar cell.
Description
Technical field
The utility model relates to solar energy materials fields, more particularly, to a kind of solar battery of high conversion efficiency.
Background technique
Solar battery can convert light energy into electric energy, also referred to as photovoltaic cell (Photovoltaic, PV), wherein
Iii-v solar battery is concerned because of its transfer efficiency with higher.Between silicon is in first generation silicon solar cell
Tape splicing gap semiconductor is easy to happen the change of crystal momentum when electronics is from valence to conduction band, and III-V compound is
The change of crystal momentum will not occur for direct band-gap semicondictor, so that iii-v solar battery is in microelectronics using upper tool
There is superior performance, furthermore III-V compound band gap is wide, and the mixing III-V compound of ternary or quaternary is such as
InGaP etc. more can make the design variation of band gap bigger, so that iii-v solar battery has efficient performance.Mesh
Preceding iii-v area of solar cell is quickly grown and Related product is numerous, however people still it is expected in iii-v solar energy
Transfer efficiency is further increased on the basis of battery.
Utility model content
The technical problem to be solved by the utility model is to provide the solar batteries of high conversion efficiency, further improve
The transfer efficiency of iii-v solar battery, it is with important application prospects in area of solar cell.
Technical solution adopted in the utility model is:
The utility model provides a kind of solar battery of high conversion efficiency, anti-including what is be from top to bottom cascading
Reflecting layer, the perovskite material bed of material, TiO2Layer, iii-v solar battery and DBR layer.
Preferably, the anti-reflecting layer is bionical moth ocular structure.
Preferably, the material of the anti-reflecting layer is one of silicon nitride, silica.
Preferably, the iii-v solar battery is multijunction solar cell.
Further, the multijunction solar cell is three-joint solar cell, and the three-joint solar cell includes three
The energy gap of a sub- battery, three sub- batteries from top to bottom successively successively decreases.
Further, the structure of the three-joint solar cell is from top to bottom specially the InGaP being cascading
Layer, channel layer one, GaAs layers, channel layer two, GaInNAs layers, channel layer three and GaAs substrate.
Further, the structure of the multijunction solar cell is from top to bottom specially the AlIn window being cascading
Layer, InGaP emission layer, InGaP base layer, AlGaInP back surface electric field layer, the first tunnel knot, InGaP Window layer, InGaAs
Emission layer, InGaAs base layer, AlGaP back surface electric field layer, the second tunnel knot, InGaAs buffer layer, InGaP heterosphere, Ge
Base layer and Ge back surface electric field layer.
Further, the structure of the multijunction solar cell is from top to bottom specially the p-AlGaAs being cascading
Window layer, p-GaAs emission layer, n-GaAs base layer；N-GaAs substrate is additionally provided with below the DBR layer.
Further, the structure of the multijunction solar cell from top to bottom be specially be cascading coating,
Window layer, InGaAs N-shaped emission layer, InGaAs p-type base layer, back surface electric field layer, tunnel knot, buffer layer, Ge N-shaped expand
Dissipate layer, Ge p-substrate.
Further, the structure of the multijunction solar cell is from top to bottom specially the n-AlInP being cascading
Window layer, n-InGaP emission layer, p-InGaP base layer, p-AlInP back surface electric field layer, the tunnel p-AlGaAs/n-InGap
Knot, n-InGaP Window layer, n-InGaAs emission layer, p-InGaAs base layer, p-InGaP back surface electric field layer, p-GaAs/n-
GaAs tunnel knot, n-InGaAs buffer layer, InGaP layers, n-Ge layers, p-Ge layers.
Preferably, condenser mould group is additionally provided with above the anti-reflecting layer.
Further, the condenser mould group is Fresnel Lenses.
The beneficial effects of the utility model are:
The utility model is additionally arranged anti-reflecting layer, the perovskite material bed of material, TiO on the basis of iii-v solar battery2
Layer and DBR (distribution Bragg reflector) layer, wherein anti-reflecting layer has the characteristics such as broad spectral response and big receipts angular, can
Increase the receipts light quantity of solar battery unit area, thus loss caused by reducing light due to reflection, the perovskite material bed of material can
It absorbs more solar spectrum to enter in material, dbr structure can be improved the light of long wavelength part in the reflection of material internal and dissipate
Penetrate, to increase light path, and then increase the absorption of long wavelength part, the solar battery that the utility model obtains iii-v too
Increase receipts light quantity using anti-reflecting layer on the basis of positive energy battery, the perovskite material bed of material absorbs luminous energy and DBR layer increase long wave
The absorption of part light, further improves transfer efficiency, with important application prospects in area of solar cell.
Detailed description of the invention
Fig. 1 is the structure design diagram of the solar battery of the utility model high conversion efficiency；
Fig. 2 is the structure chart of the solar battery one of the utility model specific example high conversion efficiency；
Fig. 3 is the structure chart of the solar battery two of the utility model specific example high conversion efficiency；
Fig. 4 is the structure chart of the solar battery three of the utility model specific example high conversion efficiency；
Fig. 5 is the structure chart of the solar battery four of the utility model specific example high conversion efficiency；
Fig. 6 is the structure chart of the solar battery five of the utility model specific example high conversion efficiency.
Specific embodiment
It is clearly and completely retouched below with reference to technical effect of the embodiment to the design and generation of the utility model
It states, to be completely understood by the purpose of this utility model, feature and effect.Obviously, described embodiment is the utility model
A part of the embodiment, rather than whole embodiments are based on the embodiments of the present invention, and those skilled in the art is not paying
Other embodiments obtained under the premise of creative work out belong to the range of the utility model protection.
Embodiment 1
Referring to Fig. 1, the utility model provides a kind of solar battery of high conversion efficiency, including from top to bottom stacks gradually
Anti-reflecting layer, the perovskite material bed of material, TiO of setting2Layer, iii-v solar battery and DBR layer.
It traditionally will use dielectric film such as silicon nitride (SiNx), silica (SiO2) etc. materials as anti-reflecting layer,
It is destructive can to determine that it is generated with a thickness of the odd-multiple of 1/4 λ of incidence wave wavelength according to the different refraction coefficient of different materials
Interference, to reach best anti-reflection effect, in some preferred embodiments using electron beam development, nano impression and receive
Anti-reflecting layer material is prepared into bionical moth ocular structure by the methods of rice ball lithography, such as passes through one in patent CN102263144A
Step lithography and etching technique prepares bionical moth ocular structure, can be promoted respectively using the nanostructure of moth eye shape as the surface of antireflection
The light quantity that enters of sub- battery reaches highest gain effect.The perovskite material bed of material belongs to semiconductor, and such as CH can be selected3NH3PbI3、
CH3NH3PbBr3、CH3NH3PbCl3There is good light absorptive can absorb more solar spectrum and enter in material for equal materials,
Conducive to raising photoelectric conversion efficiency.DBR (distribution Bragg reflector) layer belongs to one kind of dielectric mirror, can be by two kinds
The materials arranged in alternating composition of different dielectric coefficient such as AlAs/GaAs, by controlling the refraction coefficient of DBR layer thickness and material,
Plane light wave after different reflecting layer can just reflected generates Constructive interaction, to improve reflectivity, and then improves photoelectricity and turns
Change efficiency.
Iii-v solar battery used in the utility model can be unijunction or multijunction solar cell, tie below
Several specifically used iii-v solar batteries are closed to be illustrated.
Referring to fig. 2, Fig. 2 provides a kind of solar battery one of high conversion efficiency, including from top to bottom stacks gradually and set
Upper contact electrode, anti-reflecting layer, the perovskite material bed of material, TiO set2Layer, iii-v solar battery, DBR material layer and under connect
Touched electrode, the iii-v solar battery are three-joint solar cell, from top to bottom successively include battery, GaAs on InGaP
Battery and GaAs substrate under middle battery, GaInNAs, wherein battery includes InGaP layers and channel layer one on InGaP, and energy gap is
Battery includes GaAs layers and channel layer two in 1.9ev, GaAs, and battery includes GaInNAs layers under energy gap 1.4ev, GaInNAs
With channel layer three, energy gap 1.0ev, the energy gap of three sub- batteries from top to bottom successively successively decreases.
A kind of solar battery two of high conversion efficiency is provided referring to Fig. 3, Fig. 3, including from top to bottom stacks gradually and sets
Anti-reflecting layer, the perovskite material bed of material, TiO set2Layer, iii-v solar battery and DBR material layer, on the anti-reflecting layer
It is provided with contact electrode one and contact electrode two, the iii-v solar battery is from top to bottom successively powered on including InGaP
Pond, the first tunnel knot, battery under battery, the second tunnel knot and Ge in InGaAs, wherein battery includes stacking gradually on InGaP
n+Type AlInP Window layer, N-shaped InGaP emission layer, p-type InGaP base layer and p+Type AlGaInP back surface electric field layer, energy gap
For 1.86ev, battery includes the n stacked gradually in InGaAs+Type InGaP Window layer, N-shaped InGaAs emission layer, p-type InGaAs
Base layer and p+Type InGaP back surface electric field layer, battery includes the N-shaped being cascading under energy gap 1.4ev, Ge
InGaAs buffer layer, N-shaped InGaP heterosphere, N-shaped Ge base layer and p-type Ge back surface electric field layer, energy gap 0.65ev, son
The energy gap of battery from top to bottom successively successively decreases.
Referring to fig. 4, Fig. 4 provides a kind of solar battery three of high conversion efficiency, including from top to bottom stacks gradually and set
Anti-reflecting layer, the perovskite material bed of material, TiO set2Layer, iii-v solar battery, DBR material layer and N-shaped GaAs substrate, institute
It states and is provided with contact electrode one and contact electrode two on anti-reflecting layer, the material of the DBR material layer is 12 couples of AlAs/GaAs,
Iii-v solar battery is GaAs single junction cell, and the GaAs single junction cell includes the p-type AlGaAs window being cascading
Mouth layer, p-type GaAs emission layer, N-shaped GaAs base layer, energy gap 1.42ev.
A kind of solar battery four of high conversion efficiency is provided referring to Fig. 5, Fig. 5, including from top to bottom stacks gradually and sets
Anti-reflecting layer, the perovskite material bed of material, TiO set2Layer, iii-v solar battery and DBR material layer, on the anti-reflecting layer
It is provided with contact electrode one and contact electrode two, the iii-v solar battery includes from top to bottom being cascading
Coating, Window layer, InGaAs N-shaped emission layer, InGaAs p-type base layer, back surface electric field layer, tunnel knot, buffer layer, Ge
N-type diffusion layer, Ge p-substrate.
A kind of solar battery five of high conversion efficiency is provided referring to Fig. 6, Fig. 6, including from top to bottom stacks gradually and sets
Anti-reflecting layer, the perovskite material bed of material, TiO set2Layer, iii-v solar battery and DBR material layer, on the anti-reflecting layer
It is provided with contact electrode one and contact electrode two, the iii-v solar battery includes from top to bottom being cascading
The upper battery of InGaP, the first tunnel knot, battery, the InGaP are powered under battery, the second tunnel knot, buffer layer and Ge in InGaAs
Pond includes the N-shaped AlInP Window layer being from top to bottom cascading, N-shaped InGaP emission layer, p-type InGaP base layer and p-type
AlInP back surface electric field layer, energy gap 1.82ev, p-type AlGaAs/n-InGap tunnel knot is become in the first tunnel, described
Battery includes the N-shaped InGaP Window layer being from top to bottom cascading, N-shaped InGaAs emission layer, p-type in InGaAs
InGaAs base layer and p-type InGaP back surface electric field layer, energy gap 1.40ev, p-type GaAs/n- is become in second tunnel
GaAs tunnel knot, the buffer layer include N-shaped InGaAs buffer layer and InGaP layers, and battery includes Ge layers of N-shaped and p under the Ge
Ge layers of type, energy gap 0.65ev.
In further preferred embodiment condenser mould can be arranged in the top of anti-reflecting layer in the utility model
Group, preferably the Fresnel Lenses lens as used in patent CN104659139 utilize the optical grating diffraction effect in Fresnel Lenses
One angle of light deflection for making vertical incidence increases the spread length of light and then improves photoelectric conversion efficiency.
Be above the preferred embodiment of the utility model is illustrated, but the utility model be not limited to it is described
Embodiment, those skilled in the art can also make various equivalent changes without departing from the spirit of the present invention
Shape or replacement, these equivalent deformations or replacement are all included in the scope defined by the claims of the present application.
Claims (12)
1. a kind of solar battery of high conversion efficiency, which is characterized in that including the antireflection being from top to bottom cascading
Layer, the perovskite material bed of material, TiO2Layer, iii-v solar battery and DBR layer.
2. the solar battery of high conversion efficiency according to claim 1, which is characterized in that the anti-reflecting layer is bionical
Moth ocular structure.
3. the solar battery of high conversion efficiency according to claim 1, which is characterized in that the material of the anti-reflecting layer
For one of silicon nitride, silica.
4. the solar battery of high conversion efficiency according to claim 1, which is characterized in that the iii-v solar energy
Battery is multijunction solar cell.
5. the solar battery of high conversion efficiency according to claim 4, which is characterized in that the multijunction solar cell
For three-joint solar cell, the three-joint solar cell includes three sub- batteries, the energy gaps of three sub- batteries by up to
Under successively successively decrease.
6. the solar battery of high conversion efficiency according to claim 5, which is characterized in that the three-joint solar cell
Structure from top to bottom be specially be cascading InGaP layer, channel layer one, GaAs layers, channel layer two, GaInNAs layers,
Channel layer three and GaAs substrate.
7. the solar battery of high conversion efficiency according to claim 4, which is characterized in that the multijunction solar cell
Structure from top to bottom be specially be cascading AlIn Window layer, InGaP emission layer, InGaP base layer, AlGaInP
Back surface electric field layer, the first tunnel knot, InGaP Window layer, InGaAs emission layer, InGaAs base layer, AlGaP back surface electric field
Layer, the second tunnel knot, InGaAs buffer layer, InGaP heterosphere, Ge base layer and Ge back surface electric field layer.
8. the solar battery of high conversion efficiency according to claim 4, which is characterized in that the multijunction solar cell
Structure from top to bottom be specially be cascading p-AlGaAs Window layer, p-GaAs emission layer, n-GaAs base layer；Institute
It states and is additionally provided with n-GaAs substrate below DBR layer.
9. the solar battery of high conversion efficiency according to claim 4, which is characterized in that the multijunction solar cell
Structure be from top to bottom specially the coating, Window layer, InGaAs N-shaped emission layer, the InGaAs p-type base that are cascading
Region layer, back surface electric field layer, tunnel knot, buffer layer, Ge n-type diffusion layer, Ge p-substrate.
10. the solar battery of high conversion efficiency according to claim 4, which is characterized in that the multi-junction solar electricity
The structure in pond is from top to bottom specially the n-AlInP Window layer being cascading, n-InGaP emission layer, the base area p-InGaP
Layer, p-AlInP back surface electric field layer, p-AlGaAs/n-InGap tunnel knot, n-InGaP Window layer, n-InGaAs emission layer, p-
InGaAs base layer, p-InGaP back surface electric field layer, p-GaAs/n-GaAs tunnel knot, n-InGaAs buffer layer, InGaP layers,
N-Ge layers, p-Ge layers.
11. the solar battery of -10 described in any item high conversion efficiencies according to claim 1, which is characterized in that the anti-reflective
It penetrates above layer and is additionally provided with condenser mould group.
12. the solar battery of high conversion efficiency according to claim 11, which is characterized in that the condenser mould group is
Fresnel Lenses.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201821713610.6U CN208985992U (en) | 2018-10-22 | 2018-10-22 | A kind of solar battery of high conversion efficiency |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201821713610.6U CN208985992U (en) | 2018-10-22 | 2018-10-22 | A kind of solar battery of high conversion efficiency |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109326662A (en) * | 2018-10-22 | 2019-02-12 | 深圳市科创数字显示技术有限公司 | A kind of solar battery of high conversion efficiency |
| CN111490120A (en) * | 2020-03-19 | 2020-08-04 | 中兴能源有限公司 | Flexible composite laminated solar cell and preparation method thereof |
| CN111785836A (en) * | 2020-06-27 | 2020-10-16 | 上海师范大学 | Solar cell with hole transport layer with moth eye structure and preparation method thereof |
-
2018
- 2018-10-22 CN CN201821713610.6U patent/CN208985992U/en not_active Withdrawn - After Issue
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109326662A (en) * | 2018-10-22 | 2019-02-12 | 深圳市科创数字显示技术有限公司 | A kind of solar battery of high conversion efficiency |
| CN109326662B (en) * | 2018-10-22 | 2024-05-17 | 深圳市科创数字显示技术有限公司 | Solar cell with high conversion efficiency |
| CN111490120A (en) * | 2020-03-19 | 2020-08-04 | 中兴能源有限公司 | Flexible composite laminated solar cell and preparation method thereof |
| CN111785836A (en) * | 2020-06-27 | 2020-10-16 | 上海师范大学 | Solar cell with hole transport layer with moth eye structure and preparation method thereof |
| CN111785836B (en) * | 2020-06-27 | 2022-12-16 | 上海师范大学 | Solar cell with hole transport layer with moth eye structure and preparation method thereof |
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