CN208971251U - A kind of double frequency ambient RF energy collecting circuit based on cmos fet transistor - Google Patents
A kind of double frequency ambient RF energy collecting circuit based on cmos fet transistor Download PDFInfo
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- CN208971251U CN208971251U CN201821887381.XU CN201821887381U CN208971251U CN 208971251 U CN208971251 U CN 208971251U CN 201821887381 U CN201821887381 U CN 201821887381U CN 208971251 U CN208971251 U CN 208971251U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Abstract
The utility model discloses a kind of double frequency ambient RF energy collecting circuit based on cmos fet transistor, including LC resonance match circuit and auto bias circuit, one end of inductance L in the LC resonance match circuit is connected with the anode that antenna inputs, the other end series capacitance C of inductance L is connect with auto bias circuit, and the auto bias circuit includes being made of PMOS transistor, NMOS transistor, resistance R1, resistance R2 and capacitor C1.Double frequency ambient RF energy collecting circuit of the utility model based on cmos fet transistor, the improved Villard voltage-multiplying circuit collected for ambient RF energy reduces the intrinsic threshold voltage of the diode by CMOS building by way of automatic biasing, own loss is reduced simultaneously, to during collection of energy, most of low power ambient RF energy can be utilized, to reach efficiency optimization, effectively extend the life cycle of wireless mobile apparatus and miniature electronic product facility.
Description
Technical field
The utility model relates to energy collection technology field, specially a kind of double frequency ring based on cmos fet transistor
Border RF energy collecting circuit.
Background technique
As wireless sensor network (WSN) develops the arrival in epoch, the sensor node powering mode of WSN is by wirelessly supplying
Electric mode replaces original battery power supply mode, and since its volume is limited, limited battery capacity, limited life cycle needs battery
The battery to be regularly replaced will make us hanging back, unsustainable, and wireless power mode can save maintenance cost and human cost,
Since ambient radio-frequency (RF) signal has long-range covering and ubiquitous, acquisition ambient RF energy is to realize the best way WSN
Diameter, but the power density of ambient RF energy is lower and spectrum distribution is wider, therefore the double frequency based on cmos fet transistor
Ambient RF energy collecting circuit is a kind of effective means, and the rectification circuit of effective RF energy acquisition is main both at home and abroad at present
The single-frequency rectification circuit of Schottky diode building is studied, and Schottky diode cannot be realized in normal CMOS technology, it is difficult
To realize the single-chip integration of entire circuit and then construct the voltage doubling rectifing circuit based on cmos fet transistor.
Utility model content
The purpose of this utility model is to provide a kind of, and the double frequency ambient RF energy based on cmos fet transistor is collected
Circuit has the whole efficiency for improving RF energy collecting circuit, and solves and realize the miniaturization of ambient RF energy collecting circuit
The advantages of technical problem, solves the problems of the prior art.
To achieve the above object, the utility model provides the following technical solutions: a kind of based on cmos fet transistor
Double frequency ambient RF energy collecting circuit, including LC resonance match circuit and auto bias circuit, in the LC resonance match circuit
One end of inductance L is connected with the anode that antenna inputs, and the other end series capacitance C of inductance L is connect with auto bias circuit, it is described from
Biasing circuit includes being made of PMOS transistor, NMOS transistor, resistance R1, resistance R2 and capacitor C1, the leakage of PMOS transistor
Pole is connected with the drain electrode parallel interface of NMOS transistor, source electrode connecting resistance R1, capacitor Cout and the voltage Vout of PMOS transistor
The parallel interface at end, the grid of PMOS transistor meet the source electrode of NMOS transistor, the resistance R1 other end, resistance R2 and capacitor C1
Parallel interface, source electrode and the resistance R2 and capacitor C1 of NMOS transistor are grounded altogether.
Preferably, the LC resonance match circuit and the auto bias circuit one end that connects are connected with antenna input, the other end
It is connect with the end voltage Vout.
Preferably, the LC resonance match circuit is made of inductance L, capacitor C and capacitor Cout, inductance L and capacitor C series connection
It is in parallel with capacitor Cout.
Preferably, the port of the voltage Vout connects with the both ends of rectifier.
Compared with prior art, the beneficial effects of the utility model are as follows:
It is improved to be received for ambient RF energy based on the double frequency ambient RF energy collecting circuit of cmos fet transistor
The Villard voltage-multiplying circuit of collection reduces the intrinsic threshold voltage of the diode by CMOS building by way of automatic biasing, together
When reduce own loss, can be using most of low power ambient RF energy, to reach efficiency thus during collection of energy
It is optimal, effectively extend the life cycle of wireless mobile apparatus and miniature electronic product facility.
Detailed description of the invention
Fig. 1 is the LC resonance match circuit schematic diagram of the utility model；
Fig. 2 is the diode double frequency RF energy collecting circuit schematic diagram of the utility model；
Fig. 3 is the typical Villard voltage-multiplying circuit schematic diagram of the utility model；
Fig. 4 is the improved Villard voltage-multiplying circuit schematic diagram of the utility model.
In figure: 1, LC resonance match circuit；2, auto bias circuit.
Specific embodiment
The following will be combined with the drawings in the embodiments of the present invention, carries out the technical scheme in the embodiment of the utility model
Clearly and completely describe, it is clear that the described embodiments are only a part of the embodiments of the utility model, rather than whole
Embodiment.Based on the embodiments of the present invention, those of ordinary skill in the art are without making creative work
Every other embodiment obtained, fall within the protection scope of the utility model.
Please refer to Fig. 1 and Fig. 4, a kind of double frequency ambient RF energy collecting circuit based on cmos fet transistor, including
LC resonance match circuit 1 and auto bias circuit 2, LC resonance match circuit 1 and auto bias circuit 2 connect one end and antenna input
It is connected, the other end is connect with the end voltage Vout, the positive phase that one end and the antenna of the inductance L in LC resonance match circuit 1 inputs
Even, LC resonance match circuit 1 is made of inductance L, capacitor C and capacitor Cout, and inductance L and capacitor C series connection are in parallel with capacitor Cout,
The other end series capacitance C of inductance L is connect with auto bias circuit 2, and auto bias circuit 2 includes by PMOS transistor, NMOS crystal
Pipe, resistance R1, resistance R2 and capacitor C1 composition, the drain electrode of PMOS transistor are connected with the drain electrode parallel interface of NMOS transistor,
Source electrode connecting resistance R1, the capacitor Cout of PMOS transistor and the parallel interface at the end voltage Vout, the port of voltage Vout and rectification
The both ends of device connect, and the grid of PMOS transistor meets the source electrode of NMOS transistor, the resistance R1 other end, resistance R2 and capacitor C1
Parallel interface, source electrode and the resistance R2 and capacitor C1 of NMOS transistor are grounded altogether, reduced by way of auto bias circuit 2 by
The intrinsic threshold voltage of the diode of CMOS building, while own loss is reduced, to can be utilized during collection of energy
Most of low power ambient RF energy, to reach efficiency optimization, under 66 μ W input, the efficiency of the circuit is 22.97%, separately
Outside, it due to the output voltage that automatic biasing uses oneself to generate, only uses an auto bias circuit and can be reduced output voltage and presented
Load, this technology not only optimizes circuit, but also reduces the size of circuit.
Referring to Fig. 2, the circuit structure of the matching network of dual-frequency point is consistent, each matching network has been all made of inductance
L, capacitor C device forms the resonance circuit of correlated frequency point, effectively increases the output amplitude of low-power input signal, can be effective
Realize the acquisition of the ambient RF energy of low power density, the LC resonance circuit Q factor Q the high then to the ring of low power density
The acquisition of border RF energy is more beneficial, and double frequency rectification circuit is symmetrical above and below in circuit, and rectification circuit is by Schottky diode structure
At.
The signal source of ambient RF energy be it is diversified, as base station signal, wireless Internet signal, satellite communication letter
Number, the signal that generates of TV signal, broadcast singal and user etc., these signal distributions construct double in different frequency point
Frequency RF energy collecting circuit is convenient for raising RF energy collection efficiency.Diode used in circuit should need have low-down connect
The pressure that is powered and high working frequency, in a mobile device, due to its limited space, it is expected that constructed energy acquisition circuit can collect
At in a piece of circuit, but Schottky diode cannot be realized in normal CMOS technology, it is therefore desirable to which one kind is based on crystal
The circuit of pipe is collected for ambient RF energy, and typical Villard voltage multiplier can field-effect transistors simulating diode reality
Its existing energy acquisition circuit, please refers to Fig. 3.
Increase since the Schottky diode of CMOS building will form its threshold voltage, and the signal amplitude of ambient RF energy
It is often lower, so that the ability for causing the circuit to collect ambient RF energy declines.Improvement circuit is proposed thus, please refers to Fig. 4.
In summary: improved to be used for ring based on the double frequency ambient RF energy collecting circuit of cmos fet transistor
The Villard voltage-multiplying circuit that border RF energy is collected is reduced by way of automatic biasing by the intrinsic of the diode of CMOS building
Threshold voltage, while own loss is reduced, so that most of low power environment RF energy can be utilized during collection of energy
Amount effectively extends the life cycle of wireless mobile apparatus and miniature electronic product facility to reach efficiency optimization.
It should be noted that, in this document, relational terms such as first and second and the like are used merely to a reality
Body or operation are distinguished with another entity or operation, are deposited without necessarily requiring or implying between these entities or operation
In any actual relationship or order or sequence.Moreover, the terms "include", "comprise" or its any other variant are intended to
Non-exclusive inclusion, so that the process, method, article or equipment including a series of elements is not only wanted including those
Element, but also including other elements that are not explicitly listed, or further include for this process, method, article or equipment
Intrinsic element.
While there has been shown and described that the embodiments of the present invention, for the ordinary skill in the art,
It is understood that these embodiments can be carried out with a variety of variations in the case where not departing from the principles of the present invention and spirit, repaired
Change, replacement and variant, the scope of the utility model is defined by the appended claims and the equivalents thereof.
Claims (4)
1. a kind of double frequency ambient RF energy collecting circuit based on cmos fet transistor, including LC resonance match circuit (1)
With auto bias circuit (2), it is characterised in that: one end of the inductance L in the LC resonance match circuit (1) and antenna input just
Extremely it is connected, the other end series capacitance C of inductance L is connect with auto bias circuit (2), and the auto bias circuit (2) includes by PMOS
Transistor, NMOS transistor, resistance R1, resistance R2 and capacitor C1 composition, the drain electrode of PMOS transistor and the leakage of NMOS transistor
Pole parallel interface is connected, source electrode connecting resistance R1, the capacitor Cout of PMOS transistor and the parallel interface at the end voltage Vout, and PMOS is brilliant
The grid of body pipe connects the parallel interface of the source electrode of NMOS transistor, the resistance R1 other end, resistance R2 and capacitor C1, NMOS transistor
Source electrode be grounded altogether with resistance R2 and capacitor C1.
2. a kind of double frequency ambient RF energy collecting circuit based on cmos fet transistor according to claim 1,
Be characterized in that: the LC resonance match circuit (1) and auto bias circuit (2) one end that connects are connected with antenna input, the other end
It is connect with the end voltage Vout.
3. a kind of double frequency ambient RF energy collecting circuit based on cmos fet transistor according to claim 1,
Be characterized in that: the LC resonance match circuit (1) is made of inductance L, capacitor C and capacitor Cout, inductance L and capacitor C series connection with
Capacitor Cout is in parallel.
4. a kind of double frequency ambient RF energy collecting circuit based on cmos fet transistor according to claim 1,
Be characterized in that: the port of the voltage Vout connects with the both ends of rectifier.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201821887381.XU CN208971251U (en) | 2018-11-15 | 2018-11-15 | A kind of double frequency ambient RF energy collecting circuit based on cmos fet transistor |
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| CN201821887381.XU CN208971251U (en) | 2018-11-15 | 2018-11-15 | A kind of double frequency ambient RF energy collecting circuit based on cmos fet transistor |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110176941A (en) * | 2019-07-05 | 2019-08-27 | 电子科技大学 | One kind is wirelessly without direct current heat transfer agent transmission circuit |
| CN111464052A (en) * | 2020-05-12 | 2020-07-28 | 苏州芯达微电子科技有限公司 | Novel rectifier circuit for wireless NFC energy collection |
| CN112350456A (en) * | 2020-09-25 | 2021-02-09 | 广州市网优优信息技术开发有限公司 | Intelligent wireless charging circuit and system |
-
2018
- 2018-11-15 CN CN201821887381.XU patent/CN208971251U/en active Active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110176941A (en) * | 2019-07-05 | 2019-08-27 | 电子科技大学 | One kind is wirelessly without direct current heat transfer agent transmission circuit |
| CN110176941B (en) * | 2019-07-05 | 2024-02-06 | 电子科技大学 | Wireless direct-current-free sensing information transmission circuit and implementation method |
| CN111464052A (en) * | 2020-05-12 | 2020-07-28 | 苏州芯达微电子科技有限公司 | Novel rectifier circuit for wireless NFC energy collection |
| CN111464052B (en) * | 2020-05-12 | 2021-04-27 | 苏州芯达微电子科技有限公司 | Novel rectifier circuit for wireless NFC energy collection |
| CN112350456A (en) * | 2020-09-25 | 2021-02-09 | 广州市网优优信息技术开发有限公司 | Intelligent wireless charging circuit and system |
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