CN204103611U - A kind of radio frequency energy collector - Google Patents

Abstract

The utility model discloses a kind of radio frequency energy collector, by two adjustable inductances L1, L2, and rectification circuit formed; One end of adjustable inductance L1 and wireless input positive terminal, the other end connects the X end of rectification circuit; One end of adjustable inductance L2 and wireless input negative pole end, the other end connects the Y end of rectification circuit.Above-mentioned rectification circuit includes 4 electric capacity C1-C4,4 a nmos pass transistor N1-N4 and 2 PMOS transistor P1, P2.The utility model have employed unique coupling boost network, add the high-frequency rectification circuit of improvement, greatly increase sensitivity and the speed of response of system, the direct voltage of needs can be produced by collecting the faint signal of telecommunication in very short time, thus meet the normal work of follow-up system.

Description

A kind of radio frequency energy collector

Technical field

The utility model relates to wireless energy transmission technology field, is specifically related to a kind of radio frequency energy collector.

Background technology

Wireless energy transfer is the new technology grown up gradually along with constantly increasing contactlessly powered demand.Wireless energy transfer refers to that energy is transferred to a process of electric loading from energy source, this process be not traditional with wired come, but to be realized by wireless transmission.Because this technology does not rely on wired transmission medium, the power supply of the scene of thus disposing difficulty for wired power supply especially inside of human body medical apparatus and wireless sensor network node etc. has great importance.

Have at present three kinds of basic wireless energy transfer modes also namely wireless charging mode be respectively radio charging, resonance charging and induction charging.Radio charging modes is also known as electric wave reception type, and the power that can receive is very little, is mainly used in the power consumed when portable terminal provides standby, or extremely low power equipment energy supply.Resonance charging modes, its electric energy transmission range can reach 3-4m, and what can send up to a few KW is high-power, and be applicable to robot, the short distances such as automobile need the application of large power supply.Induction charging mode, utilizes modern power electronic power interchange technique, magnetic Field Coupling technology, realizes the noncontact transmission of energy from static equipment to movable equipment, such as rfid card by means of modern control theory and means.

But, it is no matter the wireless energy transfer mode of which kind of type, two main performances of its wireless energy collection are receiving sensitivity and conversion efficiency, and the receiving sensitivity wherein how improving the energy collecting device of wireless energy transfer is the crucial major issue in current wireless energy transmission technology field.

Utility model content

Technical problem to be solved in the utility model is to provide a kind of radio frequency energy collector, and it can improve the sensitivity of radio frequency energy collector.

For solving the problem, the utility model is achieved through the following technical solutions:

A kind of radio frequency energy collector, primarily of two adjustable inductances L1, L2, and rectification circuit formed; One end of adjustable inductance L1 and wireless input positive terminal, the other end connects the X end of rectification circuit; One end of adjustable inductance L2 and wireless input negative pole end, the other end connects the Y end of rectification circuit.

Above-mentioned rectification circuit includes 4 electric capacity C1-C4,4 a nmos pass transistor N1-N4 and 2 PMOS transistor P1, P2; The grid of nmos pass transistor N1 connects the source electrode of nmos pass transistor N2, and the grid of nmos pass transistor N2 connects the source electrode of nmos pass transistor N1; Grid and the drain electrode of nmos pass transistor N3 are connected the source electrode of nmos pass transistor N1 simultaneously, and grid and the drain electrode of nmos pass transistor N4 are connected the source electrode of nmos pass transistor N2 simultaneously; The source electrode of nmos pass transistor N3 connects the source electrode of PMOS transistor P2, and the source electrode of nmos pass transistor N4 connects the source electrode of PMOS transistor P1; The grid of PMOS transistor P2 after electric capacity C3 and the source electrode of nmos pass transistor N1 after electric capacity C1, be interconnected to form this rectification circuit X end.The drain electrode of nmos pass transistor N1 and the drain electrode of nmos pass transistor N2 are connected to form the direct-flow input end of this rectification circuit; The grid of PMOS transistor P1 after electric capacity C4 and the source electrode of nmos pass transistor N2 after electric capacity C2, be interconnected to form this rectification circuit Y end; The drain electrode of PMOS transistor P1 and the drain electrode of PMOS transistor P2 are connected to form the output of this rectification circuit.

Described rectification circuit can be 1, also can more than 2 or 2.When rectification circuit is more than 2 or 2, the X end of each rectification circuit all with being connected of adjustable inductance L1, the Y end of each rectification circuit all with being connected of adjustable inductance L2, the input of first order rectification circuit connects the nominal voltage signal of outside input, the output of previous stage rectification circuit connects the input of rear stage rectification circuit, the outside output voltage output signal of output of afterbody rectification circuit.

In such scheme, adjustable inductance L1 is identical with adjustable inductance L2 type selecting, electric capacity C1 is identical with electric capacity C2 type selecting, electric capacity C3 is identical with electric capacity C4 type selecting, nmos pass transistor N1 is identical with nmos pass transistor N2 type selecting, nmos pass transistor N3 is identical with nmos pass transistor N4 type selecting, and PMOS transistor P1 is identical with PMOS transistor P2 type selecting.

In such scheme, the type selecting of described 4 electric capacity C1-C4 is all identical, and the type selecting of 4 nmos pass transistor N1-N4 is all identical.

Compared with prior art, the utility model have employed unique coupling boost network, add the high-frequency rectification circuit of improvement, greatly increase sensitivity and the speed of response of system, the direct voltage of needs can be produced by collecting the faint signal of telecommunication in very short time, thus meet the normal work of follow-up system.

Accompanying drawing explanation

Fig. 1 is a kind of circuit diagram of radio frequency energy collector.

Fig. 2 is the equivalent schematic diagram of Fig. 1.

Fig. 3 is a kind of circuit module connection layout of radio frequency energy collector.

Embodiment

Embodiment 1:

A kind of radio frequency energy collector of the present embodiment 1, as shown in Figure 1, it is primarily of two adjustable inductances L1, L2, and rectification circuit formed.One end of adjustable inductance L1 and wireless input positive terminal, the other end connects the X end of rectification circuit.One end of adjustable inductance L2 and wireless input negative pole end, the other end connects the Y end of rectification circuit.

Above-mentioned rectification circuit includes 4 electric capacity C1-C4,4 a nmos pass transistor N1-N4 and 2 PMOS transistor P1, P2.The grid of nmos pass transistor N1 connects the source electrode of nmos pass transistor N2, and the grid of nmos pass transistor N2 connects the source electrode of nmos pass transistor N1.Grid and the drain electrode of nmos pass transistor N3 are connected the source electrode of nmos pass transistor N1 simultaneously, and grid and the drain electrode of nmos pass transistor N4 are connected the source electrode of nmos pass transistor N2 simultaneously.The source electrode of nmos pass transistor N3 connects the source electrode of PMOS transistor P2, and the source electrode of nmos pass transistor N4 connects the source electrode of PMOS transistor P1.The grid of PMOS transistor P2 after electric capacity C3 and the source electrode of nmos pass transistor N1 after electric capacity C1, be interconnected to form this rectification circuit X end.The drain electrode of nmos pass transistor N1 and the drain electrode of nmos pass transistor N2 are connected to form the direct-flow input end of this rectification circuit.The grid of PMOS transistor P1 after electric capacity C4 and the source electrode of nmos pass transistor N2 after electric capacity C2, be interconnected to form this rectification circuit Y end.The drain electrode of PMOS transistor P1 and the drain electrode of PMOS transistor P2 are connected to form the output of this rectification circuit.

In order to ensure symmetry, above-mentioned adjustable inductance L1 is identical with adjustable inductance L2 type selecting, electric capacity C1 is identical with electric capacity C2 type selecting, electric capacity C3 is identical with electric capacity C4 type selecting, nmos pass transistor N1 is identical with nmos pass transistor N2 type selecting, nmos pass transistor N3 is identical with nmos pass transistor N4 type selecting, and PMOS transistor P1 is identical with PMOS transistor P2 type selecting.More particularly, in the utility model preferred embodiment, the type selecting of described 4 electric capacity C1-C4 is all identical, and the type selecting of 4 nmos pass transistor N1-N4 is all identical.

As shown in Figure 2, it adopts coupling booster circuit and rectification electrical combination to radio frequency energy collector equivalent schematic diagram of the present utility model, realizes highly sensitive wireless energy and collects.R_PAD in Fig. 2 is the characteristic impedance 50 ohm of antenna, and L is adjustable coupling inductance, R_rec and C_rec is respectively equivalent inpnt resistance and the electric capacity of follow-up rectification circuit input end mouth.In Fig. 2, PMOS transistor P1 and P2 forms main difference rectification circuit, and nmos pass transistor N1 and N2 is combined into boost network, and nmos pass transistor N3 and N4 mainly does the effect of diode.

Coupling booster circuit adopts simple and effective L & C matching network, the radiofrequency signal received by antenna is boosted by coupling to supply follow-up rectification network, and L is wherein adjustable inductance, C_rec is the equivalent capacity of at least one follow-up rectification circuit input end, require that this electric capacity C_rec is as far as possible little, thus produce large boosting multiple.Each rectification circuit is all improved traditional Di-ckson voltage rectifier, to improve sensitivity.Namely nmos pass transistor N3 and N4 is equivalent to two diodes, due to the unilateral conduction of diode, nmos pass transistor N1 and N2 is combined the input that the amplitude high-frequency signal produced is carried in the commutated network be made up of PMOS transistor P1 and P2, thus increases rectifier output voltage.

Under the effect of input difference high frequency sinusoidal signal, by the input equivalent capacity regulating the breadth length ratio (W/L) of MOS transistor in rectification circuit to regulate rectification circuit, make equivalent capacity C_rec as far as possible less than normal.Then the inductance L in coupling boost network is regulated.When L & C matching network mates, the wireless signal that antenna receives can be changed into the same frequency wireless signal that amplitude increases tens times by coupling boost network.For rectification circuit, the input voltage of higher magnitude makes the MOS transistor in rectification circuit be operated in linear zone.Thus make MOS transistor normally can open work.Input differential signal is produced higher same width direct voltage through coherent detection by rectification circuit.And the Dickson voltage rectifier of improvement adopted can be larger the amplitude of direct voltage that exports of raising, be far longer than the amplitude of input signal, thus meet the requirement of high output dc voltage.

The course of work of above-mentioned coupling booster circuit is:

If V ₀for coupling boost network is transferred to the input signal of follow-up rectification network, can be obtained by L-C matching theory:

$V_0=V_{\mathrm{in}}\frac{\frac{1}{\mathrm{jwC}\_\mathrm{rec}}+R\_\mathrm{rec}}{(R\_\mathrm{pad}+R\_\mathrm{rec})+(\mathrm{jwL}+\frac{1}{\mathrm{jwC}\_\mathrm{rec}})}$

Can obtain according to formula:

When time, matching network presents purely resistive, and electric current is maximum, when reducing C_rec, can obtain enough large V ₀, the general principle of Here it is the utility model coupling booster circuit.When the signal that antenna receives only has about 10mV, voltage can be brought up to 200mV-250mV by coupling boost network.Improve because small voltage cannot the phenomenon that normally works of driven MOS pipe, thus follow-up rectification circuit can effectively be worked, the direct voltage needed for generation.

The course of work of above-mentioned rectification circuit is:

When the amplitude high-frequency signal input that prime network provides, because PMOS transistor P1 and P2 controls by differential electric signal, larger conducting voltage can be produced, make the easier ON operation of metal-oxide-semiconductor.

When RF+ is high level, when RF-is low level, PMOS transistor P1 conducting, in circuit, signal RF+ is charged to load capacitance by conducting resistance.

When RF+ is low level, when RF-is high level, PMOS transistor P2 conducting, in circuit, signal RF-is charged to load capacitance by conducting resistance.

When receiving radio frequency signal, nmos pass transistor N1 and N2 forms a kind of simple boost network, by the high frequency ac signal of the generation amplitude in N1 and N2 source.

When RF+ is high level, when RF-is low level, nmos pass transistor N2 conducting, in circuit, direct voltage Vdc can be added to the radiofrequency signal of N2 source, produces in N2 source the radiofrequency signal that minimum peak equals Vdc.The amplitude radiofrequency signal produced is added to by nmos pass transistor N4 the input that PMOS transistor P1 and P2 combines rectification circuit, thus improves the VD of rectification circuit.

When RF+ is low level, when RF-is high level, nmos pass transistor N1 conducting, in circuit, direct voltage Vdc can be added to the radiofrequency signal of N1 source, produces in N1 source the radiofrequency signal that minimum peak equals Vdc.The amplitude radiofrequency signal produced is added to by nmos pass transistor N3 the input that PMOS transistor P1 and P2 combines rectification circuit, thus improves the VD of rectification circuit.

Embodiment 2:

The another kind of radio frequency energy collector of the present embodiment 2 is substantially identical with embodiment 1, and its difference is more than 1 of the number of rectification circuit, but 2, as shown in Figure 3.When rectification circuit is more than 2 or 2, the X end of each rectification circuit all with being connected of adjustable inductance L1, the Y end of each rectification circuit all with being connected of adjustable inductance L2, the input of first order rectification circuit connects the nominal voltage signal of outside input, the output of previous stage rectification circuit connects the input of rear stage rectification circuit, the outside output voltage output signal of output of afterbody rectification circuit.

Claims (4)

1. a radio frequency energy collector, is characterized in that: primarily of two adjustable inductances L1, L2, and rectification circuit formed; One end of adjustable inductance L1 and wireless input positive terminal, the other end connects the X end of rectification circuit; One end of adjustable inductance L2 and wireless input negative pole end, the other end connects the Y end of rectification circuit;

Above-mentioned rectification circuit includes 4 electric capacity C1-C4,4 a nmos pass transistor N1-N4 and 2 PMOS transistor P1, P2; The grid of nmos pass transistor N1 connects the source electrode of nmos pass transistor N2, and the grid of nmos pass transistor N2 connects the source electrode of nmos pass transistor N1; Grid and the drain electrode of nmos pass transistor N3 are connected the source electrode of nmos pass transistor N1 simultaneously, and grid and the drain electrode of nmos pass transistor N4 are connected the source electrode of nmos pass transistor N2 simultaneously; The source electrode of nmos pass transistor N3 connects the source electrode of PMOS transistor P2, and the source electrode of nmos pass transistor N4 connects the source electrode of PMOS transistor P1; The grid of PMOS transistor P2 after electric capacity C3 and the source electrode of nmos pass transistor N1 after electric capacity C1, be interconnected to form this rectification circuit X end;

The drain electrode of nmos pass transistor N1 and the drain electrode of nmos pass transistor N2 are connected to form the direct-flow input end of this rectification circuit; The grid of PMOS transistor P1 after electric capacity C4 and the source electrode of nmos pass transistor N2 after electric capacity C2, be interconnected to form this rectification circuit Y end; The drain electrode of PMOS transistor P1 and the drain electrode of PMOS transistor P2 are connected to form the output of this rectification circuit.

2. a kind of radio frequency energy collector according to claim 1, is characterized in that: described rectification circuit is more than 2 or 2; Now, the X end of each rectification circuit all with being connected of adjustable inductance L1, the Y end of each rectification circuit all with being connected of adjustable inductance L2, the input of first order rectification circuit connects the nominal voltage signal of outside input, the output of previous stage rectification circuit connects the input of rear stage rectification circuit, the outside output voltage output signal of output of afterbody rectification circuit.

3. a kind of radio frequency energy collector according to claim 1 and 2, it is characterized in that: adjustable inductance L1 is identical with adjustable inductance L2 type selecting, electric capacity C1 is identical with electric capacity C2 type selecting, electric capacity C3 is identical with electric capacity C4 type selecting, nmos pass transistor N1 is identical with nmos pass transistor N2 type selecting, nmos pass transistor N3 is identical with nmos pass transistor N4 type selecting, and PMOS transistor P1 is identical with PMOS transistor P2 type selecting.

4. a kind of radio frequency energy collector according to claim 3, it is characterized in that: the type selecting of described 4 electric capacity C1-C4 is all identical, the type selecting of 4 nmos pass transistor N1-N4 is all identical.