CN208970549U - Semi-polarity gallium nitride single quantum well blue light emitting device - Google Patents
Semi-polarity gallium nitride single quantum well blue light emitting device Download PDFInfo
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Abstract
This disclosure relates to a kind of semi-polarity gallium nitride single quantum well blue light emitting device comprising: n type gallium nitride layer；P-type gallium nitride layer；And single quantum well active layer, between n type gallium nitride layer and p-type gallium nitride layer, the single quantum well material is InxGayN1‑x‑y, the x value between 0.1-0.2, with a thickness of
Description
Technical field
This disclosure relates to field of semiconductor illumination more particularly to a kind of semi-polarity gallium nitride single quantum well blue illuminator
Part.
Background technique
The University of California St Babara branch school in the U.S. and Japanese SONY, SUMITOMO etc. some gallium nitride (GaN) are ground
Study carefully mechanism and company and is successfully prepared for high power, efficient blue, green luminescence on some special GaN semi-polarity crystal faces
Diode and laser diode etc..Gallium nitride light-emitting diode is a kind of semiconductor diode more mature at present, common
Gallium nitride based light emitting diode structure be on substrate successively deposit buffer layer, the gallium nitride layer to undope, N-type conduction nitrogen
Change gallium layer, multi layer quantum well (MQW) layer, P-type conduction aluminum gallium nitride.Half polar plane with high inclination-angle, such as 2021 (away from c
105 ° of axis) and 3031 (100 ° away from c-axis) recently due to the decline of its blue-ray LED efficiency is lower and to cause people sizable emerging
Interest, such as biggish critical thickness, increase internal quantum.(IQE), the lower and hot lower spy of decline of efficiency decline
Property impressive.
In LED light emitting device, green light LED is one of the main devices for forming efficient RGB white light, but current green light
The luminous efficiency of LED is far below blue-ray LED and red-light LED.Improve the luminous efficiency of green light LED, it is necessary to understand LED
The luminescence mechanism of active layer.Efficient blue green light LED generallys use multiple quantum wells (MQW) active layer structure, multiple quantum wells
(MQW) light that active layer structure issues is to be mixed with multiple Quantum Well while luminous result.Therefore, people are not readily available list
The luminescence mechanism of pure green light or blue light, to can not accurately understand the luminous efficiency that simultaneously specific aim improves monochromatic LED device.More
For importantly, quantum well layer can generate relaxation, and relaxation will lead to active layer and its on the critical thickness of quantum well layer
There is new dislocation in his adjacent layer, therefore leads to the decline of LED performance.Half polar plane with high inclination-angle, such as 2021 (away from c-axis
105 °) and 3031 (100 ° away from c-axis) also result in the inefficient decline sizable interest of blue-ray LED recently, and make us impression
For example big critical thickness of deep characteristic, increased internal quantum.(IQE), inefficient decline and low-heat decline
In addition, being a kind of preferable selection using the luminescent layer of single quantum well.But the device that gallium nitride semiconductor is constituted
With layered structure, in the case that the Quantum Well number of plies is less than three layers, depletion region is shorter than the depletion layer of multiple quantum well layer very much,
Therefore, more poor in terms of antistatic voltage, and its luminous intensity is limited by quantum well layer quantity.Even if than people energy
The much lower 100V electrostatic potential of the voltage enough experienced, it is also possible to damage gallium nitride semiconductor component easily.As luminous
When the active layer number of plies of layer is less than or equal to three layers, this damage result is more serious, is less than or equal to three layers as its quantum well layer
Active layer LED component, the ceiling voltage of anti-ESD is no more than 500V.Therefore, prepared by gallium nitride based light emitting diode
The electrostatic of band is likely to cause device permanent damage with electrostatic present in LED environment and operator, for example, will
It takes out antistatic sack, and in the case that it is assembled in product, and there is essentially the risks of damage device property.
Although the ESD characteristic of chip can be enhanced by improving the crystalline quality of epitaxial material, in gallium nitride semiconductor knot
It has been difficult have better promotion in terms of brilliant increased quality.And LED moment a large amount of electrostatic charge streams in encapsulation and application process
The phenomenon that crossing frequent occurrence, easily cause LED that can not light, increase of leaking electricity, voltage change, light output reduce the problems such as, serious shadow
Ring the use of LED.Therefore, it is desirable to improve the ESD characteristic of gallium nitride semiconductor component, under the conditions of existing crystallization technique to lower
Above-mentioned risk, to improve the reliability of gallium nitride semiconductor component, especially semi-polarity gallium nitride single quantum well blue light emitting
Device.Especially, it is intended that obtain a kind of antistatic voltage be more than 500V so that the higher Quantum Well number of plies very less than three layers
To the LED component of single quantum well (SQW).
Therefore, researcher or user's expectation obtain a kind of blue-ray LED photophore of High Efficiency Luminescence, can reduce quantum
The relaxation of well layer improves the performance of LED.
Summary of the invention
The disclosure is intended to eliminate one of the problem of being previously mentioned.It thus provides a kind of blue light of single quantum well is sent out
Optical device provides a kind of semi-polarity gallium nitride single quantum well blue light emitting device by the repetition test of inventor, packet
It includes: n type gallium nitride layer；P-type gallium nitride layer；And single quantum well active layer, be located at n type gallium nitride layer and p-type gallium nitride layer it
Between, the single quantum well material is InxGayN1-x-y, the x value between 0.1-0.2, with a thickness of
According to the semi-polarity gallium nitride single quantum well blue light emitting device of the disclosure, wherein the x value is between 0.15.
According to the semi-polarity gallium nitride single quantum well blue light emitting device of the disclosure, wherein the single quantum well with a thickness of
According to the semi-polarity gallium nitride single quantum well blue light emitting device of the disclosure, further includes: the first electrostatic protection layer, position
Between n type gallium nitride layer and active layer；And second electrostatic protection layer, between active layer and p-type gallium nitride layer.
According to the semi-polarity gallium nitride single quantum well blue light emitting device of the disclosure, wherein first electrostatic protection layer and
Second electrostatic protection layer is undoped GaN layer or InGaN layer.
According to the semi-polarity gallium nitride single quantum well blue light emitting device of the disclosure, wherein first electrostatic protection layer and
Second electrostatic protection layer is the GaN layer or InGaN layer of low doping concentration.
According to the semi-polarity gallium nitride single quantum well blue light emitting device of the disclosure, wherein first electrostatic protection layer and
Second electrostatic protection layer with a thickness of
A kind of formation semi-polarity gallium nitride single quantum well blue light emitting device another aspect of the present disclosure provides
Method, comprising: on undoped nitride buffer layer formed n type gallium nitride layer；With each secondDeposition
Speed forms In on n type gallium nitride layerxGayN1-x-yThe single quantum well active layer of the semiconductor material of formula, stating x value is 0.1-
Between 0.2, the single quantum well with a thickness of And p-type gallium nitride layer is formed in the single quantum well active layer.
According to the method for the formation semi-polarity gallium nitride single quantum well blue light emitting device of the disclosure, wherein the x value is
Between 0.15.
According to the method for the formation semi-polarity gallium nitride single quantum well blue light emitting device of the disclosure, wherein the list quantum
Trap with a thickness of
According to the method for the formation semi-polarity gallium nitride single quantum well blue light emitting device of the disclosure, further includes: in N-type nitrogen
Change and forms the first electrostatic protection layer between gallium layer and single quantum well active layer；And it is active in p-type gallium nitride layer and single quantum well
The second electrostatic protection layer is formed between layer.
According to the method for the formation semi-polarity gallium nitride single quantum well blue light emitting device of the disclosure, wherein described first is quiet
Electrical protection and the second electrostatic protection layer are undoped GaN layer or InGaN layer.
According to the method for the formation semi-polarity gallium nitride single quantum well blue light emitting device of the disclosure, wherein described first is quiet
Electrical protection and the second electrostatic protection layer are the GaN layer or InGaN layer of low doping concentration.
According to the method for the formation semi-polarity gallium nitride single quantum well blue light emitting device of the disclosure, wherein described first is quiet
Electrical protection and the second electrostatic protection layer with a thickness of
The disclosure provides a kind of semi-polarity gallium nitride single quantum well blue light emitting device that can effectively change and improve luminous power
Design, by reduce quantum well layer quantity, to reduce the thickness of entire active layer, to reduce interface lattice mismatch
The formation of grown layer.On the other hand by reduce quantum well layer thickness, eliminate well layer thickness it is blocked up caused by lattice mismatch and
Caused strained layer.The disclosure is in the case where misfit dislocation is not present than relatively thin, interface in grown layer, in order to avoid at interface
On there is misfit dislocation, by controlling the thickness of epitaxially grown layer, it is made to be no more than certain certain critical thickness (for example, usually
Single quantum well with a thickness ofMore than), for example,So that the thickness of quantum well layer disappears less than critical thickness
In addition to misfit dislocation, to also eliminate the situation that lattice relaxation occurs, strained layer is prevented to be changed into relaxed layer.
Moreover, and the In in quantum well layer of the disclosure by passing through significant decrease active layerxGayN1-x-yMiddle In's contains
Amount, can weaken segregation (this segregation will lead to largely) caused by In institute energy, so that the base for effectively increasing active layer is brilliant
Quality.
In addition, the disclosure n type gallium nitride layer and p-type gallium nitride layer increase the first electrostatic protection layer and active layer with
Increase the thickness that the second electrostatic protection layer increases depletion region between p-type gallium nitride layer, enhances backward voltage, increase half-shadow
Property gallium nitride single quantum well blue light emitting device capacitor, to improve semi-polarity gallium nitride single quantum well blue light emitting device
ESD performance.In addition, in GaN layer or InGaN layer situation that the first electrostatic protection layer and the second electrostatic protection layer are low doping concentration
Under, forward voltage can also be reduced, the electrical characteristics of semi-polarity gallium nitride single quantum well blue light emitting device are further promoted.
Detailed description of the invention
The drawings herein are incorporated into the specification and forms part of this specification, and shows the implementation for meeting the disclosure
Example, and together with specification for explaining the principles of this disclosure.
Shown in FIG. 1 is layered the showing according to the semi-polarity gallium nitride single quantum well blue light emitting device of the disclosure
It is intended to.
Shown in Fig. 2 is the sample tests according to the semi-polarity gallium nitride single quantum well blue light emitting device of the disclosure
Schematic diagram.
Specific embodiment
Example embodiments are described in detail here, and the example is illustrated in the accompanying drawings.Following description is related to
When attached drawing, unless otherwise indicated, the same numbers in different drawings indicate the same or similar elements.Following exemplary embodiment
Described in embodiment do not represent all implementations consistent with this disclosure.On the contrary, they be only with it is such as appended
The example of the consistent device and method of some aspects be described in detail in claims, the disclosure.
It is only to be not intended to be limiting and originally open merely for for the purpose of describing particular embodiments in the term that the disclosure uses.It removes
Non- defined otherwise, every other scientific and technical terms used herein have and disclosure those of ordinary skill in the art
Normally understood identical meaning.The "an" of the singular used in disclosure and the accompanying claims book, " institute
State " and "the" be also intended to including most forms, unless the context clearly indicates other meaning.It is also understood that making herein
Term "and/or" refers to and may combine comprising one or more associated any or all of project listed.
It will be appreciated that though various information, but this may be described using term first, second, third, etc. in the disclosure
A little information should not necessarily be limited by these terms.These terms are only used to for same type of information being distinguished from each other out.For example, not departing from
In the case where disclosure range, first can also be referred to as second, and vice versa.Depending on context, word as used in this
Language " if " can be construed to " ... when " or " when ... " or " in response to determination ".
In order to make those skilled in the art more fully understand the disclosure, with reference to the accompanying drawings and detailed description to this public affairs
It opens and is described in further detail.
Embodiment described below is not limited to according to the structure of the gallium nitride semiconductor component of the disclosure.As shown in Figure 1,
Gallium nitride semiconductor component 100 is formed on substrate 110.Substrate 110 is made of insulating material, such as sapphire or semiconductor material
Expect GaN.The basic structure layer of semiconductor component: N-type GaN layer 120, active layer 130 and p-type GaN is formed on substrate 110
Layer 140.The first electrostatic protection layer 150 is formed in N-type GaN layer 120 and active layer 130.In active layer 130 and p-type GaN layer
Between 140, it is formed with the second electrostatic protection layer 160.
As shown in Figure 1, N-type GaN layer 120 is conventional wherein doped with the GaN layer of N-type impurity.In epitaxial process
In, make TMG and NH3Material gas and SiH4Foreign gas flow into reacting furnace, reacting furnace growth temperature is maintained at 1040
DEG C, thus undope common GaN buffer layer (be not shown in the figure, buffer layer usually in 550 DEG C or so of low-temperature epitaxy,
Thickness is about) on epitaxial growth doping Si N-type GaN layer 120.The usual N-type GaN layer 120 with a thickness of 1-4
Micron, wherein the Si impurity concentration adulterated is generally higher than 5 × 1018/cm3.Slightly higher Si doping in N-type GaN layer 120
Impurity concentration helps to reduce forward voltage and threshold current.Since the GaN buffer layer to undope usually has excellent crystallinity,
Therefore N-type GaN layer 120 also has preferable crystallinity.But to better N-type GaN layer 120 is grown, selectively, in N
Between type GaN layer 120 and buffer layer first one layer of epitaxial growth at a high temperature of 1040 DEG CThe GaN of left and right to undope
Layer (not shown), as transition zone, this is also that can improve resistance to electrostatic potential characteristic.But, the Si doping in N-type GaN layer 120
Impurity concentration had better not be higher than 5 × 1020/cm3.It is preferable in 2.0 to 3.0 micron ranges for the thickness of N-type GAN layer 120
It is interior, the N-type GAN layer 120 with N electrode (not shown) of low resistivity can be formed in this way, to reduce forward voltage.
As shown in Figure 1, the first electrostatic protection layer 150 is formed on N-type GaN layer 120.First electrostatic protection layer 150 can
To be the GaN layer or InGaN layer of undoped GaN layer or low doping concentration.In reacting furnace, after growing N-type GAN layer 120
Retain SiH4Substrate temperature is maintained 1040 DEG C in the case where foreign gas, makes TMG and NH3Material gas flow into reacting furnace,
It is with growth thicknessThe GaN to undope the first electrostatic protection layer 150.First electrostatic protection layer 150 and active layer
130 contacts, help to improve resistance to electrostatic potential characteristic.If desired, can also be in the first electrostatic protection layer 150 and active layer
Other function layer is inserted between 130.The thickness of first electrostatic protection layer 150 exists Between.Undoped first is quiet
The thickness of electrical protection 150 is more thanIt then will increase forward voltage, this can deteriorate the quality of LED component.Undoped
The thickness of one electrostatic protection layer 150 is lower thanIt cannot prevent leakage current.Therefore, it is preferable to undoped first
The thickness of electrostatic protection layer 150 existsBetween, if can be arrangedBetween it is further preferred that.In order to
Improve N-type GaN layer 120 caused by deteriorate crystallinity, can be formed with a thickness ofIt is undoped first quiet
Electrical protection 150 so as to improve the crystallinity of the active layer 130 subsequently formed thereon, while also improving resistance to electrostatic potential
Characteristic.
Selectively, the first electrostatic protection layer 150 can be the GaN layer or InGaN layer of a kind of low doping concentration.Adulterate N
The carrier concentration of LED component can be improved in 150 one side of the first electrostatic protection layer of type impurity, so that luminous intensity is improved,
It on the other hand can be enhanced simultaneously by increasing the thickness of the first electrostatic protection layer 150 of doped N-type impurity in a certain range
Electrostatic pressure resistance.Make SiH4Foreign gas incidentally flows into reacting furnace, is doped with impurity concentration with growth as 0.8 × 1018/cm3's
The GaN of Si and with a thickness ofDoped N-type impurity the first electrostatic protection layer 150.Recognized by experiment, as doping N
150 thickness of the first electrostatic protection layer of type impurity is more thanWhen, luminous intensity can reduce, therefore, the of doped N-type impurity
One electrostatic protection layer 150 is preferably lower thanThickness is too low by its effect less than raising electrostatic pressure resistance.Therefore, doped N-type
The thickness of first electrostatic protection layer 150 of impurity existsBetween it is relatively good, it is preferred that doped N-type impurity
The thickness of first electrostatic protection layer 150 existsWhen using the first electrostatic protection layer 150 of doped N-type impurity,
Its doping will be less than 1 × 1018/cm3.This low concentration of first electrostatic protection layer 150 of doped N-type impurity can obtain excellent
Crystallinity, thereby may be ensured that the growth of active layer 130 thereon and obtain high luminous intensity, while reducing forward voltage.N
Type impurity element can be Si or Ge etc..After the first electrostatic protection layer 150 for forming doped N-type impurity, it can retain
SiH4Temperature is kept in the case where foreign gas, directly grows the resistance of the quantum well layer as active layer 130 of the GaN to undope
Barrier.
By controlling the overall thickness of buffer layer (not shown), the first electrostatic protection layer 150 and N-type GaN layer 120 2 to 5
Meeting is so that the electrostatic resistance to pressure of LED component is more preferable, so as to significantly improve the ESD characteristic of LED in the range of micron.It may be selected
Ground, can make the first electrostatic protection layer 150 and meanwhile comprising undoped first electrostatic protection layer 150 and low doping concentration the
One electrostatic protection layer 150.
As shown in Figure 1, the active layer 130 of quantum well structure is formed by the gallium nitride semiconductor comprising In and Ga.Have
Active layer 130 can be with N-type or p type impurity doping, with two kinds of impurity of N-type and p-type adulterate active layer 130 it is more miscellaneous than with p-type
The active layer 130 of matter doping has bigger luminous intensity.But in the disclosure, active layer 130 preferably undopes, i.e., not
Impurity is added, to grow the active layer 130 with excellent crystallinity.According to the active layer 130 of the quantum well structure of the disclosure
Quantum Well only there is single Quantum Well (SQW) layer structure.Due to the presence of the first electrostatic protection layer 150, even if active
Layer 130 only there is single quantum well layer also to have better electrostatic voltage endurance.
The epitaxial growth since in the first electrostatic protection layer 150 of active layer 130 is handed over according to routine by barrier layer and well layer
It for formation, can be terminated by well layer and with well layer, or be started with well layer and terminated with barrier layer.Alternatively, suitable
Sequence can be started with barrier layer and be terminated with barrier layer or be started with barrier layer and terminated with well layer.For example, first
When growing active layer 130 in electrostatic protection layer 150, growth temperature is set to 750 DEG C (being ok between 720-800 DEG C), instead
Answer cavity pressure 100-500Torr.The thickness for the GaN composition that undopes is grown firstBarrier layer, the thickness on barrier layer
ForIt is relatively good.Then, TMG, TMI and NH are then used3Deposition thickness over the barrier layer's
InxGayN1-x-yThe well layer that the semiconductor material of formula is constituted.React cavity pressure 100-500Torr, 5-20 liters/min of carrier gas flux,
NH3Flow 200-800 moles/min, TMG flow 0.1-1.0 micromole/minute, trimethyl indium flow 10-50 micromole/point
Clock, time 0.1-5 minute.InxGayN1-x-yThe x value of In is between 0.1-0.2 in the semiconductor material of formula, it is preferable to
0.15, preferably 0.12.Content by reducing In as small as possible in a certain range can reduce the group of active layer
Poly- or segregation, reduces fault, so that maximum possible improves the luminous efficiency of light emitting semiconductor device.Well layer with a thickness of
It is relatively good.
The deposition velocity of quantum well layer is about each secondBetween, it is preferable to each secondsIt is logical
The deposition of or so half a minute is crossed, thickness controls substantiallyBy the test of the sample to different-thickness active layer,
It was found that the luminous power in sample is a with respect between arbitrary units in 0.8-1.0.Optimal luminous power exists for thicknessIt is left
It is right.Generated blue light wavelength is between 430nm-470nm.Shown in Fig. 2 carried out in fact for different active layer thick specimens
The result figure of test examination.As shown in Fig. 2, well layer with a thickness ofWhen, relative power unit reaches peak 1.?Its relative power unit is 0.8 or more in range.
Being formed on the GaN to be formed and be undoped after forming single quantum well terminates barrier layer, makes well layer by two tables
Barrier layer clamping on face, and ultimately form the active layer 130 of single quantum well (SQW) layer.The overall thickness of active layer 130 exists
Left and right.Wavelength needed for the overall thickness of active layer 130 is considered that desired final LED component is adjusted.
As shown in Figure 1, terminating on barrier layer at it after forming active layer 130, forming the second electrostatic protection layer 160.
Second electrostatic protection layer 160 can be the GaN layer or InGaN layer of undoped GaN layer or low doping concentration.It shines in order to higher
Intensity can include AL or In in the second electrostatic protection layer 160.But for better ESD characteristic or for more accurate research
The luminous efficiency of Quantum Well, the second electrostatic protection layer 160 can be undoped GaN layer.Specifically, by the temperature of reacting furnace
1040 DEG C are increased to, TMG and NH are made3Material gas undoped second electrostatic protection layer 160 is made.If simultaneously to reaction
Furnace input contains the foreign gas of such as Mg, can form doping concentration not higher than 5 × 1018/cm3The second low-doped electrostatic
Protective layer 160.The thickness of second electrostatic protection layer 160 is no more thanPreferably?Range
It is interior more preferable.
As shown in Figure 1, finally forming p-type GaN layer 140 in the second electrostatic protection layer 160.Specifically, by reacting furnace
Interior temperature is maintained at 1040 DEG C, and by TMG and NH3Material gas, the foreign gas of Cp2Mg and carrier gas H2It is sent into reaction
Furnace, so that epitaxial growth goes out p-type GaN layer 140.Certain thickness is being grown into, such asLeft and right, then cools to 650-
700 DEG C, it is sent into N2Gas carries out annealing of wafer, the final GaN semiconductor component 100 for obtaining the disclosure.
It is lower than the GaN semiconductor component of three quantum well layer structures with those according to the GaN semiconductor component 100 of the disclosure
It compares, antistatic voltage improves 2-3 times.Detection is sampled to the laboratory sample based on the disclosure, the results show that according to this
The antistatic voltage of disclosed 100 sample of GaN semiconductor component is increased to 2000V or so.
It should be pointed out that the GaN semiconductor component 100 of the disclosure is due to nonpolarity and semi-polarity LED and LD device meeting
Better ESD is generated, more particularly along the side of the semi-polarity crystal face of (2021) crystal face, (3031) crystal face and (3031) crystal face etc.
To gallium nitride LED or the LD device of growth.
Although substrate not mentioned herein, the component of the disclosure usually generates on a sapphire substrate, and along
(2021) the direction growth of the semi-polarity crystal face of crystal face and (3031) crystal face etc..
Within term " about " and " about " can be used for meaning target size in some embodiments ± 20%, some
In embodiment within ± the 10% of target size, in some embodiments target size ± 5% within, and there are also exist
In some embodiments within ± the 2% of target size.Term " about " and " about " may include target size.
The techniques described herein scheme can be realized as method, wherein at least one embodiment has been provided.As described
Movement performed by a part of method can sort in any suitable manner.Therefore, embodiment can be constructed, wherein respectively
Movement is executed with the different order of the order from shown in, may include being performed simultaneously some movements, even if these movements are being said
It is illustrated as sequentially-operating in bright property embodiment.In addition, method may include more than those of showing in some embodiments
Movement, in other embodiments include than those of showing less movement.
Although the illustrative embodiment of at least one that there is described herein the disclosure, for those skilled in the art
For member, a variety of changes, modifications and improvement can be easy to carry out.Such changes, modifications and improvement are directed at the essence of the disclosure
Within mind and range.Therefore, preceding description is only not intended as limiting by way of example.The disclosure is only wanted by following patent
It asks and its equivalent is limited.
Claims (8)
1. a kind of semi-polarity gallium nitride single quantum well blue light emitting device comprising:
N type gallium nitride layer；
P-type gallium nitride layer；And
Single quantum well active layer, between n type gallium nitride layer and p-type gallium nitride layer, the single quantum well material is
InxGayN1-x-y, the x value between 0.1-0.2, with a thickness of
2. semi-polarity gallium nitride single quantum well blue light emitting device according to claim 1, wherein the x value be 0.15 it
Between.
3. semi-polarity gallium nitride single quantum well blue light emitting device according to claim 1 or 2, wherein the single quantum well
With a thickness of
4. semi-polarity gallium nitride single quantum well blue light emitting device according to claim 1, further includes:
First electrostatic protection layer, between n type gallium nitride layer and active layer；And
Second electrostatic protection layer, between active layer and p-type gallium nitride layer.
5. semi-polarity gallium nitride single quantum well blue light emitting device according to claim 4, wherein first electrostatic is protected
Sheath and the second electrostatic protection layer are undoped GaN layer or InGaN layer.
6. semi-polarity gallium nitride single quantum well blue light emitting device according to claim 4, wherein first electrostatic is protected
Sheath and the second electrostatic protection layer are the GaN layer or InGaN layer of low doping concentration.
7. semi-polarity gallium nitride single quantum well blue light emitting device according to claim 5 or 6, wherein first electrostatic
Protective layer and the second electrostatic protection layer with a thickness of
8. semi-polarity gallium nitride single quantum well blue light emitting device according to claim 1, wherein the semi-polarity face is
(2021) crystal face, (3031) crystal face or (3031) crystal face.
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| CN109346578A (en) * | 2018-12-04 | 2019-02-15 | 西安赛富乐斯半导体科技有限公司 | Semi-polarity gallium nitride single quantum well blue light emitting device and its manufacturing method |
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| CN109346578A (en) * | 2018-12-04 | 2019-02-15 | 西安赛富乐斯半导体科技有限公司 | Semi-polarity gallium nitride single quantum well blue light emitting device and its manufacturing method |
| CN109346578B (en) * | 2018-12-04 | 2023-07-07 | 西安赛富乐斯半导体科技有限公司 | Method for forming semi-polar gallium nitride single quantum well blue light luminescent device |
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