CN208923085U - A kind of fleet plough groove isolation structure - Google Patents
A kind of fleet plough groove isolation structure Download PDFInfo
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- CN208923085U CN208923085U CN201821522868.8U CN201821522868U CN208923085U CN 208923085 U CN208923085 U CN 208923085U CN 201821522868 U CN201821522868 U CN 201821522868U CN 208923085 U CN208923085 U CN 208923085U
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Abstract
The utility model provides a kind of fleet plough groove isolation structure, including substrate, isolated groove, the first filled media, the second filled media, hole and third filled media, wherein, isolated groove is formed in substrate, and to define multiple active areas in the substrate, the first filled media is formed in the side wall of isolated groove, second filling, which is situated between, to be formed in the middle part of isolated groove, for hole between the first filled media and the second filled media, third filled media is formed in aperture top, and hole is sealed.The utility model introduces hole in fleet plough groove isolation structure, it may include air in the hole, since dielectric constant of air only has 1.0, the K value of filled media in isolated groove can be effectively reduced, to enhance the isolation performance of groove, the parasitic capacitance generated at shallow trench isolation is reduced, interfering with each other between reduction device improves the speed of service of device.
Description
Technical field
The utility model belongs to the manufacturing field of integrated circuit and electronic component, is related to a kind of shallow trench isolation knot
Structure.
Background technique
As device size is smaller and smaller, the width of STI also can be smaller and smaller, then when the device of the both sides STI isolation has
Mobile charge is possible to generate parasitic capacitance, due in existing fleet plough groove isolation structure, the dielectric of trench fill medium
Constant is higher, and the isolation performance of channel is undesirable, so that interfering with each other between device, reduces the speed of service of device.
Therefore, how a kind of fleet plough groove isolation structure applied to the isolation between each unit in integrated circuit is provided, with
The dielectric constant of trench fill medium is reduced, the interference between adjacent devices is reduced, isolation effect is improved, becomes art technology
Personnel's important technological problems urgently to be resolved.
Utility model content
In view of the foregoing deficiencies of prior art, the purpose of this utility model is to provide a kind of shallow trench isolation knots
Structure, for solving the reduction with device size in the prior art, shallow trench isolation width reduces therewith, causes under isolation performance
The problem of drop.
In order to achieve the above objects and other related objects, the utility model provides a kind of fleet plough groove isolation structure, comprising:
Substrate；
Isolated groove is formed in the substrate, to define multiple active areas in the substrate；
First filled media is formed in the side wall of the isolated groove；
Second filled media is formed in the middle part of the isolated groove；
Hole, between first filled media and second filled media；
Third filled media is formed in the aperture top, the hole is sealed.
Optionally, the width range of the hole is 30 angstroms -200 angstroms, and altitude range is 500 angstroms -2800 angstroms.
The utility model also provides another fleet plough groove isolation structure, comprising:
Substrate, definition has word line regions on the substrate；
First isolated groove is formed in the substrate；
First filled media is formed in first isolated groove；
Second isolated groove is formed in the substrate, and second isolated groove intersects at first isolated groove,
And the word line regions are avoided, first isolated groove defines more in the substrate jointly with second isolated groove
A active area；
Second filled media is formed in the side wall of second isolated groove；
Third filled media is formed in the middle part of second isolated groove；
Hole, between second filled media and the third filled media；
4th filled media is formed in the aperture top, and the hole is sealed.
Optionally, second isolated groove is parallel to the word line regions.
Optionally, the width range of the hole is 30 angstroms -200 angstroms, and altitude range is 500 angstroms -2800 angstroms.
Optionally, the bottom surface of second isolated groove flushes or described with the bottom surface of first isolated groove
The bottom surface of two isolated grooves is relatively shallower than the bottom surface of first isolated groove.
As described above, the fleet plough groove isolation structure of the utility model, has the advantages that the utility model in shallow ridges
Hole is introduced in recess isolating structure, may include air in the hole, it, can be effective since dielectric constant of air only has 1.0
The K value of filled media in isolated groove is reduced, to enhance the isolation performance of groove, what reduction generated at shallow trench isolation is posted
Capacitor is given birth to, interfering with each other between reduction device improves the speed of service of device.
Detailed description of the invention
Fig. 1 a is shown as a kind of sectional view of fleet plough groove isolation structure in the prior art.
Fig. 1 b is shown as the one of active area in a kind of fleet plough groove isolation structure in the prior art, isolation structure and word line regions
Kind plane figure.
The structure that each step of production method for the fleet plough groove isolation structure that Fig. 2 a- Fig. 2 g is shown as in embodiment one is presented
Schematic diagram.
The structure that each step of production method for the fleet plough groove isolation structure that Fig. 3 a- Fig. 3 u is shown as in embodiment two is presented
Schematic diagram.
Fig. 4 a is shown as the top view that the fleet plough groove isolation structure of the utility model is presented in embodiment three.
Fig. 4 b is shown as the A-A ' of Fig. 4 a to sectional view.
Fig. 5 a is shown as the top view that the fleet plough groove isolation structure of the utility model is presented in example IV.
Fig. 5 b is shown as the B-B ' of Fig. 5 a to sectional view.
Fig. 5 c is shown as the C-C ' of Fig. 5 a to sectional view.
Component label instructions
1 substrate
2 isolation structures
3 active areas
4 word line regions
101 substrates
102 isolated grooves
103 active areas
104 first filled medias
105 sacrificial layers
106 second filled medias
107 holes
108 third filled medias
201 substrates
202 layings
203 hard mask layers
204 photoresist layers
205 photoresist layers opening
206 first isolated grooves
207 first filled medias
208 photoresist layers
209 photoresist layers opening
210 second isolated grooves
211 word line regions
212 active areas
213 second filled medias
214 sacrificial layers
215 third filled medias
216 holes
217 the 4th filled medias
301 substrates
302 isolated grooves
303 active areas
304 first filled medias
305 second filled medias
306 holes
307 third filled medias
401 substrates
402 word line regions
403 first isolated grooves
404 first filled medias
405 second isolated grooves
406 active areas
407 second filled medias
408 third filled medias
409 holes
410 the 4th filled medias
Specific embodiment
As shown in Figure 1a, it is shown as a kind of sectional view of existing fleet plough groove isolation structure, including substrate 1 and is formed in institute
The isolation structure 2 in substrate 1 is stated, the isolation structure 2 isolates multiple active areas 3 in the substrate 1.As shown in Figure 1 b,
It is shown as a kind of plane figure of active area 3 in existing fleet plough groove isolation structure, isolation structure 2 and word line regions 4.
Illustrate the embodiments of the present invention below by way of specific specific example, those skilled in the art can be by this theory
Content disclosed by bright book understands other advantages and effect of the utility model easily.The utility model can also be by addition
Different specific embodiments are embodied or practiced, and the various details in this specification can also be based on different viewpoints and answer
With carrying out various modifications or alterations under the spirit without departing from the utility model.
Please refer to Fig. 2 a to Fig. 5 c.It should be noted that diagram provided in the present embodiment only illustrates in a schematic way
The basic conception of the utility model, then in schema only display with related component in the utility model rather than when according to actual implementation
Component count, shape and size draw, when actual implementation kenel, quantity and the ratio of each component can arbitrarily change for one kind
Become, and its assembly layout kenel may also be increasingly complex.
Embodiment one
A kind of production method of fleet plough groove isolation structure is provided in the present embodiment, comprising the following steps:
Step S101 is first carried out: as shown in Figure 2 a, providing substrate 101, forms isolated groove 102 in the substrate 101
In, to define multiple active areas 103 in the substrate 101.
Specifically, the substrate 101 includes but is not limited to the semiconductor substrates such as Si, Ge, SiGe, III-V compound.Shape
Method at isolated groove 102 includes but is not limited to plasma etch process.
As an example, Fig. 2 b shows a kind of plane figure of active area 103 Yu isolated groove 102, in other embodiments
In, active area and isolated groove also can according to need using other plane figures, should not excessively limit the utility model herein
Protection scope.
Then it executes step S102: as shown in Figure 2 c, forming the first filled media 104 in the side of the isolated groove 102
Wall.
Specifically, using chemical vapor deposition, physical vapour deposition (PVD), atomic layer deposition or other deposition methods deposition first
Filled media, and using the first filled media extra outside anisotropic etching removal isolated groove bottom and groove.
Then it executes step S103: as shown in Figure 2 d, forming sacrificial layer 105 in the side wall of first filled media 104.
Specifically, using any one in chemical vapor deposition, physical vapour deposition (PVD), atomic layer deposition or combined deposition institute
State sacrificial layer, and sacrificial layer extra outside using plasma anisotropic etching removal isolated groove bottom and groove.
Step S104 is executed again: as shown in Figure 2 e, it is remaining in the isolated groove 102 to form the second filled media 106
Space.
Specifically, using any one in chemical vapor deposition, physical vapour deposition (PVD), atomic layer deposition or combined deposition institute
The second filled media is stated, removes the second filled media extra outside groove by the way of chemistry, physical grinding.
Step S105 is executed again: as shown in figure 2f, removing the sacrificial layer 105, obtains being located at first filled media
Hole 107 between 104 and second filled media 106.
Specifically, using plasma etching or wet etching remove the sacrificial layer.
Step S106 is executed again: as shown in Figure 2 g, forming third filled media 108 in 107 top of hole, by institute
State the sealing of hole 107.
Specifically, depositing the third filled media 108, and useization using chemical vapor deposition or other deposition methods
Learn the third filled media of mechanical milling tech removal groove neighboring area.
The production method of the fleet plough groove isolation structure of the present embodiment introduces hole in all shallow plough groove isolation areas, the hole
It may include air in gap, since dielectric constant of air only has 1.0, the K value of filled media in isolated groove can be effectively reduced,
To enhance the isolation performance of groove, the parasitic capacitance generated at shallow trench isolation is reduced, reduces interfering with each other between device,
Improve the speed of service of device.
Embodiment two
The production method of another fleet plough groove isolation structure, the difference of the present embodiment and embodiment one are provided in the present embodiment
Place is, introduces hole in whole shallow plough groove isolation areas in embodiment one, is suitable for wordline and is located on substrate
Semiconductor structure, or suitable for the semiconductor structure of no wordline, and in the present embodiment, only in part shallow plough groove isolation area
Hole is introduced, suitable for the semiconductor structure using embedded type word line, hole avoids embedded type word line region, avoids
Hole is destroyed when forming wordline groove, reduces isolation effect.
The production method of the fleet plough groove isolation structure of the present embodiment the following steps are included:
Step S201 is first carried out: as shown in Fig. 3 a- Fig. 3 d, providing substrate 201, forms the first isolated groove 206 in institute
It states in substrate 201.
As an example, including process in detail below:
As shown in Figure 3a, laying 202 and hard mask layer 203 are sequentially formed from bottom to top in 201 on the substrate.It is described
The semiconductor substrates such as Si, Ge, SiGe, III-V compound can be used in substrate 201.The laying 202 includes but is not limited to heat
Oxide layer, thickness range are 5~20 angstroms, and forming thermal oxide layer is dry-oxygen oxidation technique, and oxidizing temperature range is 800~1100
℃.The material of the hard mask layer 203 includes but is not limited to silicon nitride, and thickness range is 500~1000 angstroms.It is formed described hard
Mask layer 203 includes but is not limited to the methods of chemical vapor deposition, physical vapour deposition (PVD), atomic layer deposition.
As shown in Figure 3b, photoresist layer 204 is formed on the hard mask layer using spin-coating method or other methods, and used
The graphical photoresist layers 204 of photoetching processes such as exposure, development obtain several photoresist layers openings 205.
It as shown in Figure 3c, is exposure mask with the patterned photoresist layer 204, using plasma etching technics is carved downwards
The hard mask layer 203, the laying 202 and the substrate 201 are lost, first isolated groove 206 is obtained.Described first
The longitudinal section of isolated groove includes but is not limited to rectangle.The depth of first isolated groove is less than 4000 angstroms, in the present embodiment,
The depth of first isolated groove is for 3000 angstroms.
As an example, Fig. 3 e shows first isolated groove 206 in one of the substrate 201 plane figure,
Wherein, a plurality of first isolated groove being spaced apart from each other is formd.It should be pointed out that a plurality of first isolated groove 206 is only
A part for the shallow plough groove isolation area to be defined, the overall profile of active area is also not shown at this time.It is more in the present embodiment
It is parallel to each other between first isolated groove 206 described in item.However it should be clear that in other embodiments, active area and position when definition
Line uses other layout type, and the layout and extending direction of first isolated groove can also be adjusted accordingly, not answered herein
The excessively limitation protection scope of the utility model.
As an example, Fig. 3 f shows another planar cloth of first isolated groove 206 in the substrate 201
Office, wherein first isolated groove 206 corresponds to whole shallow plough groove isolation areas, at this time the overall profile of active area 212
It has presented.
Then it executes step S202: as shown in Fig. 3 g- Fig. 3 h, forming the first filled media 207 in first isolating trenches
In slot 206.
As an example, including process in detail below:
As shown in figure 3g, it is deposited using chemical vapor deposition, physical vapour deposition (PVD), atomic layer deposition or other deposition methods
First filled media 207 is in first isolated groove 206 and 203 surface of the hard mask layer, until first isolation
Groove 206 is filled.The material of first filled media 207 includes but is not limited to silica.
As illustrated in figure 3h, it is located at described the first of 203 surface of hard mask layer using chemical mechanical polishing method removal to fill out
Filling medium 207.
Execute step S203 again: as shown in Fig. 3 i- Fig. 3 j, 203 surface of the hard mask layer on the substrate 201 is fixed
Adopted word line regions 211, and the second isolated groove 210 is formed in the substrate 201, second isolated groove 210 intersects at
First isolated groove 206, and the word line regions 211 are avoided, first isolated groove 206 and second isolating trenches
Slot 210 defines multiple active areas 212 in the substrate 201 jointly.It is described to state the second isolated groove 210 in the present embodiment
From 203 surface opening of hard mask layer, run through the hard mask layer 203 and the laying 202, and extends into the substrate
In 201.
As an example, specifically including following below scheme:
As shown in figure 3i, using spin-coating method or other methods formed photoresist layer 208 above the substrate 201 described in
203 surface of hard mask layer, and the photoetching processes such as exposure, the development graphically photoresist layer 208 is used, obtain several photoresists
Layer opening 209.
It is exposure mask with the patterned photoresist layer 208, using plasma etching technics is carved downwards as shown in Fig. 3 j
First filled media 207 is lost, second isolated groove 210 is obtained.
If being pointed out that, first isolated groove 206 further includes with graphical using the plane figure of Fig. 3 e
The photoresist layer 208 be exposure mask the step of etching substrate 201 downwards.
In the present embodiment, the bottom surface of second isolated groove 210 is flushed with the bottom surface of first isolated groove 206,
The depth of second isolated groove 210 is 3000 angstroms.In other embodiments, the bottom surface of second isolated groove 210
The bottom surface of first isolated groove 206 can be relatively shallower than.
As an example, Fig. 3 k shows first isolated groove 206, second isolated groove 210 and the wordline
Region 211 is in one of the substrate 201 plane figure.Wherein, second isolated groove 210 avoids the wordline area
The hole being subsequently formed in second isolated groove 210 is destroyed to avoid when being subsequently formed embedded type word line groove in domain.
In the present embodiment, second isolated groove 210 is parallel to the word line regions 211, and is located at two and shows source region
Between 212.In other embodiments, the shape of second isolated groove 210 and arrangement can also be according to actual active areas
Arrangement and wordline layout are adjusted, as long as avoiding word line regions, should not excessively limit the protection of the utility model herein
Range.
Step S204 is executed again: as shown in Fig. 3 l- Fig. 3 m, forming the second filled media 213 in second isolated groove
210 side wall.
As an example, including process in detail below:
As shown in Fig. 3 l, second filled media 213 is deposited, second filled media 213 is coated on the substrate
203 surfaces of the hard mask layer of 201 tops, second isolated groove 210 side wall and second isolated groove 210
Bottom surface.The material of second filled media 213 includes but is not limited to silica.
As shown in figure 3m, 210 bottom surface of the second isolated groove and second isolation are removed using anisotropic etching
Extra second filled media 213 outside groove 210.
Step S205 is executed again: as shown in Fig. 3 n- Fig. 3 o, forming sacrificial layer 214 in the side of second filled media 213
Wall.
As an example, including process in detail below:
As shown in figure 3n, heavy using any one in chemical vapor deposition, physical vapour deposition (PVD), atomic layer deposition or combination
The product sacrificial layer 213, the sacrificial layer 213 are coated on 203 surface of the hard mask layer, described of 201 top of substrate
The bottom surface of the side wall of second filled media 213 and second isolated groove 210.The material of the sacrificial layer can be selected to described
The material that second filled media 213 has high selectivity ratio or is easy to be removed with wet process, such as when second filled media 213 is
When silica, silicon nitride, boron-phosphorosilicate glass (BPSG) etc. is can be selected in the material of the sacrificial layer.
As shown in Fig. 3 o, using plasma anisotropic etching removes 210 bottom surface of the second isolated groove and described
The extra sacrificial layer 214 outside second isolated groove 210.
Step S206 is executed again: as shown in Fig. 3 p- Fig. 3 q, forming third filled media 215 in second isolated groove
Remaining space in 210.
As an example, including process in detail below:
It is heavy using any one in chemical vapor deposition, physical vapour deposition (PVD), atomic layer deposition or combination as shown in Fig. 3 p
The product third filled media 215, the third filled media 215 fill the full remaining space of second isolated groove 210,
And it is coated on 203 surface of hard mask layer.The material of the third filled media 215 includes but is not limited to silica.
As shown in Fig. 3 q, the institute positioned at 203 excess surface of hard mask layer is removed by the way of Chemical Physics grinding
State third filled media 215.
Step S207 is executed again: as shown in Fig. 3 r, removing the sacrificial layer 214, obtains being located at second filled media
Hole 216 between 213 and the third filled media 215.
Specifically, using plasma etching or wet etching remove the sacrificial layer 214.
Step S201 is executed again: as shown in Fig. 3 s- Fig. 3 u, forming the 4th filled media 217 at the top of the hole 216,
The hole 216 to be sealed.
Specifically, including process in detail below:
As shown in Fig. 3 s, the 4th filled media 217 is deposited using chemical vapor deposition or other deposition methods, it is described
216 Quick seal of hole is coated on 203 surface of hard mask layer by the 4th filled media 217.
As shown in Fig. 3 t, the described 4th of 203 excess surface of hard mask layer the is removed using chemical mechanical milling tech
Filled media 217 is chemical mechanical polishing stop layer with the hard mask layer 203.
As shown in Fig. 3 u, the hard mask layer 203 of 201 top of substrate is removed using dry etch process, use is wet
Method cleaning by and the laying 202 of the top of the substrate 201 remove.
Specifically, the width range of the hole 216 is 30 angstroms -200 angstroms after sealing, altitude range is 500 angstrom -2800
Angstrom.It may include air in the hole, and can further include used process gas when depositing four filled media 217
Body.
The production method of the fleet plough groove isolation structure of the present embodiment is part shallow plough groove isolation area (avoiding word line regions)
Middle introducing hole may include air in the hole, since dielectric constant of air only has 1.0, isolated groove can be effectively reduced
The K value of middle filled media reduces the parasitic capacitance generated at shallow trench isolation to enhance the isolation performance of groove, reduces
Interfering with each other between device improves the speed of service of device.
Embodiment three
The present embodiment provides a kind of fleet plough groove isolation structures, please refer to Fig. 4 a and Fig. 4 b, wherein Fig. 4 a is shown as described shallow
The top view of trench isolations, Fig. 4 b are shown as the A-A ' of Fig. 4 a to sectional view.
As it can be seen that the fleet plough groove isolation structure includes substrate 301, isolated groove 302, the first filled media 304, second fills out
Filling medium 305, hole 306 and third filled media 307, wherein the isolated groove 302 is formed in the substrate 301, with
Multiple active areas 303 are defined in the substrate 301, first filled media 304 is formed in the isolated groove 302
Side wall, second filled media 305 are formed in 302 middle part of isolated groove, and the hole 306 is located at first filling
Between medium 304 and second filled media 305, the third filled media 307 is formed in 306 top of hole, with
The hole 306 is sealed.
Specifically, the substrate includes but is not limited to the semiconductor substrates such as Si, Ge, SiGe, III-V compound.It is described
The depth of isolated groove is less than 4000 angstroms, and in the present embodiment, the depth of the isolated groove is for 3000 angstroms.Described first fills out
Filling medium, the second filled media, the material of third filled media include but is not limited to silica.
Specifically, the width range of the hole 306 is 30 angstroms -200 angstroms after sealing, altitude range is 500 angstrom -2800
Angstrom.It may include air in the hole, and can further include used process gas when depositing the third filled media 307
Body.
The fleet plough groove isolation structure of the present embodiment introduces hole in all shallow plough groove isolation areas, can wrap in the hole
Air is included, since dielectric constant of air only has 1.0, the K value of filled media in isolated groove can be effectively reduced, to enhance ditch
The isolation performance of slot, reduces the parasitic capacitance generated at shallow trench isolation, and interfering with each other between reduction device improves device
The speed of service.
Example IV
There is provided another fleet plough groove isolation structure, the present embodiment and embodiment three in the present embodiment the difference is that,
Hole is introduced in whole shallow plough groove isolation areas in embodiment three, is located at the semiconductor junction on substrate suitable for wordline
Structure, or suitable for the semiconductor structure of no wordline, and in the present embodiment, only in part, shallow plough groove isolation area introduces hole
Gap, suitable for the semiconductor structure using embedded type word line, hole avoids embedded type word line region, avoids wordline groove
Hole is destroyed, isolation effect is reduced.
Please refer to Fig. 5 a- Fig. 5 c, wherein Fig. 5 a is shown as the vertical view that the fleet plough groove isolation structure of the present embodiment is presented
Figure, Fig. 5 b are shown as the B-B ' of Fig. 5 a to sectional view, and Fig. 5 c is shown as the C-C ' of Fig. 5 a to sectional view.
As it can be seen that the fleet plough groove isolation structure includes substrate 401, the first isolated groove 403, the first filled media 404,
Two isolated grooves 405, the second filled media 407, third filled media 408, hole 409 and the 4th filled media 410, wherein
First isolated groove 403 is both formed in the substrate 401 with second isolated groove 405, and second isolation
Groove 405 intersects at first isolated groove 403, and first isolated groove 403 and second isolated groove 405 are common
Multiple active areas 406 are defined in the substrate 401.
Specifically, the substrate includes but is not limited to the semiconductor substrates such as Si, Ge, SiGe, III-V compound.It is described
The depth of first isolated groove and the second isolated groove is respectively less than 4000 angstroms.The bottom surface of second isolated groove can with it is described
The bottom surface of first isolated groove flushes, and can also relatively be shallower than the bottom surface of first isolated groove.It is described in the present embodiment
The depth of first isolated groove and the second isolated groove is for 3000 angstroms.First filled media, the second filled media,
Third filled media, the material of the 4th filled media include but is not limited to silica.
Specifically, definition has word line regions 402 on the substrate 401, second isolated groove 405 avoids the wordline
Region 402.First filled media 404 is formed in first isolated groove 403,407 shape of the second filled media
The side wall of second isolated groove 405 described in Cheng Yu, the third filled media 408 are formed in second isolated groove 405
Portion, the hole 409 is between second filled media 407 and the third filled media, the 4th filled media
410 are formed in 409 top of hole, and the hole 409 is sealed.
As an example, second isolated groove 405 is parallel to the word line regions 402.The hole 409 after sealing
Width range is 30 angstroms -200 angstroms, and altitude range is 500 angstroms -2800 angstroms.It may include air in the hole, and can further wrap
Used process gas when four filled media 410 containing deposition.
The fleet plough groove isolation structure of the present embodiment introduces hole in part shallow plough groove isolation area (avoiding word line regions),
It may include air in the hole, since dielectric constant of air only has 1.0, filled media in isolated groove can be effectively reduced
K value reduces the parasitic capacitance generated at shallow trench isolation to enhance the isolation performance of groove, mutual between reduction device
Interference, improves the speed of service of device.
In conclusion the fleet plough groove isolation structure of the utility model is somebody's turn to do by introducing hole in fleet plough groove isolation structure
It may include air in hole, since dielectric constant of air only has 1.0, the K of filled media in isolated groove can be effectively reduced
Value reduces the parasitic capacitance generated at shallow trench isolation to enhance the isolation performance of groove, mutual dry between reduction device
It disturbs, improves the speed of service of device.So the utility model effectively overcomes various shortcoming in the prior art and has height and produce
Industry utility value.
The above embodiments are only illustrative of the principle and efficacy of the utility model, and not for limitation, this is practical new
Type.Any person skilled in the art can all carry out above-described embodiment under the spirit and scope without prejudice to the utility model
Modifications and changes.Therefore, such as those of ordinary skill in the art without departing from the revealed essence of the utility model
All equivalent modifications or change completed under mind and technical idea, should be covered by the claim of the utility model.
Claims (6)
1. a kind of fleet plough groove isolation structure characterized by comprising
Substrate；
Isolated groove is formed in the substrate, to define multiple active areas in the substrate
First filled media is formed in the side wall of the isolated groove；
Second filled media is formed in the middle part of the isolated groove；
Hole, between first filled media and second filled media；
Third filled media is formed in the aperture top, the hole is sealed.
2. fleet plough groove isolation structure according to claim 1, it is characterised in that: the width range of the hole is 30 angstroms-
200 angstroms, altitude range is 500 angstroms -2800 angstroms.
3. a kind of fleet plough groove isolation structure characterized by comprising
Substrate, definition has word line regions on the substrate；
First isolated groove is formed in the substrate；
First filled media is formed in first isolated groove；
Second isolated groove is formed in the substrate, and second isolated groove intersects at first isolated groove, and keeps away
Open the word line regions, first isolated groove and second isolated groove define in the substrate jointly multiple to be had
Source region；
Second filled media is formed in the side wall of second isolated groove；
Third filled media is formed in the middle part of second isolated groove；
Hole, between second filled media and the third filled media；
4th filled media is formed in the aperture top, and the hole is sealed.
4. fleet plough groove isolation structure according to claim 3, it is characterised in that: second isolated groove is parallel to described
Word line regions.
5. fleet plough groove isolation structure according to claim 3, it is characterised in that: the width range of the hole is 30 angstroms-
200 angstroms, altitude range is 500 angstroms -2800 angstroms.
6. fleet plough groove isolation structure according to claim 3, it is characterised in that: the bottom surface of second isolated groove and institute
The bottom surface for stating the first isolated groove flushes or the bottom surface of second isolated groove is relatively shallower than first isolated groove
Bottom surface.
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| CN201821522868.8U CN208923085U (en) | 2018-09-18 | 2018-09-18 | A kind of fleet plough groove isolation structure |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111146140A (en) * | 2019-11-27 | 2020-05-12 | 上海集成电路研发中心有限公司 | Semiconductor structure and forming method |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111146140A (en) * | 2019-11-27 | 2020-05-12 | 上海集成电路研发中心有限公司 | Semiconductor structure and forming method |
| CN111146140B (en) * | 2019-11-27 | 2023-09-05 | 上海集成电路研发中心有限公司 | Semiconductor structure and forming method |
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