CN208904006U - A kind of semiconductor heat-dissipating structure - Google Patents
A kind of semiconductor heat-dissipating structure Download PDFInfo
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- CN208904006U CN208904006U CN201822064688.6U CN201822064688U CN208904006U CN 208904006 U CN208904006 U CN 208904006U CN 201822064688 U CN201822064688 U CN 201822064688U CN 208904006 U CN208904006 U CN 208904006U
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- fin
- copper pipe
- samming
- welded
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Abstract
The utility model provides a kind of semiconductor heat-dissipating structure, includes copper pipe, semiconductor chilling plate, samming fin, ring fin, secondary copper pipe, component to be heated；Copper pipe side inner wall is connected with semiconductor chilling plate by heat conductive silica gel, and comb teeth shape structure samming fin is welded on corresponding copper pipe outer face；The copper pipe is welded with ring fin on the outer wall in addition to samming fin, if the ring fin is fin structure of the dry plate with certain radian；The pair copper pipe and copper pipe concentric, which disconnects at samming fin and is welded to connect with samming fin two sides inclined plate, and is welded and connected with secondary ring fin in secondary copper pipe outer；If the pair ring fin is fin structure of the dry plate with certain radian, and secondary ring fin is consistent with ring fin radian direction；The component to be heated is the operation element that need to carry out radiating treatment, and the heat dissipation element is relatively fixed at copper pipe center.
Description
Technical field
The utility model relates to field of radiating more particularly to a kind of semiconductor heat-dissipating structures.
Background technique
The progress of science and technology promotes current terminal electronic product integrated level higher and higher, and electronic component is produced at runtime
Raw a large amount of heat needs are dispersed into environment (generally air) rapidly, are just avoided that and burn electronics member device because temperature is excessively high
Part.For miniature electric and semiconductor product, inner space is narrow limited, and the effect is relatively poor for Natural Heat Convection.
If only not significant for the heat dissipation effect for improving semiconductor devices by increasing the increased heat exchange area of fin number, and such as
The independent radiator fan of fruit setting can effectively help semiconductor devices heat dissipation but overall volume can be bigger.
Utility model content
The purpose of this utility model is that it is in view of the drawbacks of the prior art and insufficient, a kind of semiconductor heat-dissipating structure is provided,
For the structure in the case where same heat dissipation area, volume is finned less than tradition, and it is finned that effective heat exchange area is greater than tradition.
A kind of semiconductor heat-dissipating structure that in order to achieve the above purposes, the technical solution adopted by the utility model is:, includes copper
Pipe, semiconductor chilling plate, samming fin, ring fin, secondary copper pipe, component to be heated；The copper pipe is hollow copper pipe structure, should
Copper pipe side inner wall is connected with semiconductor chilling plate by heat conductive silica gel, and is welded with comb teeth on corresponding copper pipe outer face
Shape structure samming fin；The copper pipe is welded with ring fin on the outer wall in addition to samming fin, which is several
Fin structure of the piece with certain radian；Samming fin two sides are provided with inclined plate, and secondary copper pipe is welded on inclined plate；The pair
Copper pipe and copper pipe concentric, which disconnects at samming fin and is welded to connect with samming fin two sides inclined plate, and secondary copper
Secondary ring fin is welded and connected in pipe outer wall；If the pair ring fin is fin structure of the dry plate with certain radian, and secondary
Ring fin is consistent with ring fin radian direction；The component to be heated is the operation element that need to carry out radiating treatment, this is dissipated
Thermal element is relatively fixed at copper pipe center.
Preferably, the semiconductor refrigerating on piece is provided with the power supply line connected to power supply.
The beneficial effects of the utility model are: the structure, in the case where same heat dissipation area, volume is less than traditional fin
Formula, it is finned that effective heat exchange area is greater than tradition.
Detailed description of the invention
Attached drawing described herein is to be used to provide a further understanding of the present invention, and constitutes one of the application
Point, but do not constitute the restriction to the utility model.
Fig. 1 is radiator structure schematic diagram, and Fig. 2 is radiator structure schematic internal view.
Wherein: 1 is copper pipe, and 2 be semiconductor chilling plate, and 3 be samming fin, and 4 be ring fin, and 5 be secondary copper pipe, and 51 be pair
Ring fin, 6 be component to be heated.
Specific embodiment
In conjunction with attached drawing, the utility model is described in further detail.
As shown, a kind of semiconductor heat-dissipating structure, includes copper pipe 1, semiconductor chilling plate 2, samming fin 3, annular
Fin 4, secondary copper pipe 5, component to be heated 6；The copper pipe 1 is hollow copper pipe structure, which passes through heat conductive silica gel
It is connected with semiconductor chilling plate 2, and is welded with comb teeth shape structure samming fin 3 in 1 outside wall surface of corresponding copper pipe；The copper
Pipe 1 is welded with ring fin 4 on the outer wall in addition to samming fin 3, if the ring fin 4 is fin of the dry plate with certain radian
Structure；3 two sides of samming fin are provided with inclined plate, and secondary copper pipe 5 is welded on inclined plate；The pair copper pipe 5 is with copper pipe 1 with circle
The heart, which disconnects at samming fin 3 and is welded to connect with 3 two sides inclined plate of samming fin, and welds on 5 outer wall of secondary copper pipe
It is connected to secondary ring fin 51 in succession；If the pair ring fin 51 is fin structure of the dry plate with certain radian, and inner loop shape wing
Piece 51 is consistent with 4 radian direction of ring fin；The component to be heated 6 is the operation element that need to carry out radiating treatment, the heat dissipation
Element 6 is relatively fixed at 1 center of copper pipe.
When it is implemented, being provided with the power supply line connected to power supply on the semiconductor chilling plate 2.
When practical operation, 1 one end of copper pipe is in conjunction with fan rotor, samming fin 3 and 2 hot end face phase of semiconductor chilling plate
It connects, heat is transmitted to ring fin 4 and secondary ring fin 51 by heat dissipation copper pipe 1, and form forced convection under rotation, makes heat
Amount is transmitted to outside.
Claims (2)
1. a kind of semiconductor heat-dissipating structure, it is characterised in that: include copper pipe, semiconductor chilling plate, samming fin, annular wing
Piece, secondary copper pipe, component to be heated；The copper pipe is hollow copper pipe structure, which is connected with by heat conductive silica gel
Semiconductor chilling plate, and comb teeth shape structure samming fin is welded on corresponding copper pipe outer face；The copper pipe removes samming
It is welded with ring fin on outer wall outside fin, if the ring fin is fin structure of the dry plate with certain radian；It is described equal
Warm fin two sides are provided with inclined plate, and secondary copper pipe is welded on inclined plate；The pair copper pipe and copper pipe concentric, the pair copper pipe is equal
It disconnects at warm fin and is welded to connect with samming fin two sides inclined plate, and be welded and connected with secondary ring fin in secondary copper pipe outer；
If the pair ring fin is fin structure of the dry plate with certain radian, and secondary ring fin and ring fin radian direction one
It causes；The component to be heated is the operation element that need to carry out radiating treatment, and the heat dissipation element is relatively fixed at copper pipe center.
2. a kind of semiconductor heat-dissipating structure according to claim 1, it is characterised in that: the semiconductor refrigerating on piece setting
There is the power supply line connected to power supply.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201822064688.6U CN208904006U (en) | 2018-12-10 | 2018-12-10 | A kind of semiconductor heat-dissipating structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201822064688.6U CN208904006U (en) | 2018-12-10 | 2018-12-10 | A kind of semiconductor heat-dissipating structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208904006U true CN208904006U (en) | 2019-05-24 |
Family
ID=66578527
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201822064688.6U Active CN208904006U (en) | 2018-12-10 | 2018-12-10 | A kind of semiconductor heat-dissipating structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN208904006U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110828403A (en) * | 2019-10-24 | 2020-02-21 | 上海理工大学 | Combined semiconductor unit temperature control box |
-
2018
- 2018-12-10 CN CN201822064688.6U patent/CN208904006U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110828403A (en) * | 2019-10-24 | 2020-02-21 | 上海理工大学 | Combined semiconductor unit temperature control box |
| CN110828403B (en) * | 2019-10-24 | 2021-05-11 | 上海理工大学 | Combined semiconductor unit temperature control box |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20200615 Address after: 225600 Dongting Lake Road, Gaoyou Economic Development Zone, Yangzhou, Jiangsu Patentee after: YANGZHOU GANGXIN PHOTOELECTRIC TECHNOLOGY Co.,Ltd. Address before: 510000 Guangzhou High-tech Industrial Development Zone Science Avenue 231, 233 Skirt Building B1B2, 1st, 2nd, 3rd and 4th floors Patentee before: BOAO ZONGHENG NETWORK TECHNOLOGY Co.,Ltd. Effective date of registration: 20200615 Address after: 510000 Guangzhou High-tech Industrial Development Zone Science Avenue 231, 233 Skirt Building B1B2, 1st, 2nd, 3rd and 4th floors Patentee after: BOAO ZONGHENG NETWORK TECHNOLOGY Co.,Ltd. Address before: 510000 Northeast corner of the intersection of College Road and Hongfu Road, Panyu District, Guangzhou City, Guangdong Province Patentee before: Chen Jiexiang |
|
| TR01 | Transfer of patent right |