CN208873729U - A kind of solar battery epitaxial structure - Google Patents

A kind of solar battery epitaxial structure Download PDF

Info

Publication number
CN208873729U
CN208873729U CN201821934160.3U CN201821934160U CN208873729U CN 208873729 U CN208873729 U CN 208873729U CN 201821934160 U CN201821934160 U CN 201821934160U CN 208873729 U CN208873729 U CN 208873729U
Authority
CN
China
Prior art keywords
layer
aluminium arsenide
arsenide layer
substrate
stripped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201821934160.3U
Other languages
Chinese (zh)
Inventor
罗轶
李琳琳
宋士佳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Zishi Energy Co.,Ltd.
Original Assignee
Dongtai Hi Tech Equipment Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dongtai Hi Tech Equipment Technology Co Ltd filed Critical Dongtai Hi Tech Equipment Technology Co Ltd
Priority to CN201821934160.3U priority Critical patent/CN208873729U/en
Application granted granted Critical
Publication of CN208873729U publication Critical patent/CN208873729U/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

The utility model provides a kind of solar battery epitaxial structure.The solar battery epitaxial structure includes substrate to be stripped and the sacrificial layer being arranged on substrate to be stripped and battery layers, along the direction far from substrate to be stripped, sacrificial layer and battery layers are set gradually, sacrificial layer includes at least one hierarchical element, each hierarchical element is sequentially stacked, hierarchical element includes the first aluminium arsenide layer and the second aluminium arsenide layer stacked on top of each other, and the first aluminium arsenide layer and the second aluminium arsenide layer are n-type doping layer, and the doping concentration of the first aluminium arsenide layer and the second aluminium arsenide layer is different.Sacrificial layer in the solar battery epitaxial structure can increase the contact area with wet etching liquid in wet etching course, to improve the efficiency and substrate desquamation efficiency to be stripped of wet etching, the sacrificial layer can also mitigate the removing generated between battery layers and substrate to be stripped during substrate desquamation and pull power, to improve the separation yield of substrate to be stripped and battery layers.

Description

A kind of solar battery epitaxial structure
Technical field
The utility model relates to technical field of solar batteries, and in particular, to a kind of solar battery epitaxial structure.
Background technique
GaAs (GaAs) forbidden bandwidth 1.43ev is to absorb one of optimal material selection of sunlight, by GaAs preparation The features such as solar battery has high conversion efficiency, good temp characteristic, and capability of resistance to radiation is strong, GaAs solar cell application is got over Come more extensive.
Most of GaAs batteries be all in expensive single crystalline substrate as prepared on GaAs, SiC, therefore it is at high cost It is high.Substrate desquamation technology provides necessary technology to filming development for solar battery and supports.The repeatability of substrate utilizes The cost of manufacture of thin-film solar cells is reduced, and reduces manufacturing process to the pollution of environment and the waste of resource.Current Battery lift-off technology is mostly to carry out wet etching by the sacrificial layer to substrate and the setting of battery interlayer, to separate substrate and battery Layer.
But wet etching needs to consume the plenty of time, influences battery production efficiency, so how to be effectively peeled off battery layers And substrate, the yield for improving hull cell have become current urgent problem to be solved.
Utility model content
The utility model is directed to the above-mentioned technical problems in the prior art, provides a kind of solar battery epitaxy junction Structure.The solar battery epitaxial structure by setting have at least one by n-type doping concentration stacked on top of each other it is different first The sacrificial layer for the hierarchical element that aluminium arsenide layer and the second aluminium arsenide layer are constituted passes through electrification during substrate desquamation to be stripped It learns and corrodes the solar battery epitaxial structure, the first aluminium arsenide layer and the second aluminium arsenide layer can be made to form porous structure layer, it is porous Structure sheaf can increase in wet etching course with the contact area of wet etching liquid, thus improve wet etching efficiency and to Peeling liner bottom charge stripping efficiency, porous structure layer can also mitigate the stripping generated between battery layers and substrate to be stripped in stripping process From power is pullled, to improve the separation yield of substrate to be stripped and battery layers.
The utility model provides a kind of solar battery epitaxial structure, including substrate to be stripped and setting described to be stripped Sacrificial layer and battery layers on substrate, along the direction far from the substrate to be stripped, the sacrificial layer and the battery layers are successively Setting, for the sacrificial layer for assisting the substrate to be stripped to separate with the battery layers, the sacrificial layer includes at least one Hierarchical element, along the direction far from the substrate to be stripped, each hierarchical element is sequentially stacked, and the hierarchical element includes phase Mutually stacked the first aluminium arsenide layer and the second aluminium arsenide layer, first aluminium arsenide layer and second aluminium arsenide layer are N-shaped Doped layer, and first aluminium arsenide layer is different with the doping concentration of second aluminium arsenide layer.
Preferably, the doping concentration range of first aluminium arsenide layer is 1 × 1017cm-3~1 × 1019cm-3；Described second The doping concentration range of aluminium arsenide layer is 1 × 1019cm-3~1 × 1021cm-3。
Preferably, the quantity of the hierarchical element is 1~5.
Preferably, the thickness range of first aluminium arsenide layer is 1~10nm；The thickness range of second aluminium arsenide layer For 1~10nm.
Preferably, the sacrificial layer further includes third aluminium arsenide layer, and the third aluminium arsenide layer is located at the hierarchical element The side close to the battery layers, the third aluminium arsenide layer is n-type doping layer, and the doping of the third aluminium arsenide layer is dense Degree is lower than doping concentration any in first aluminium arsenide layer and second aluminium arsenide layer.
Preferably, the doping concentration range of the third aluminium arsenide layer is 0~1 × 1017cm-3。
Preferably, the thickness range of the third aluminium arsenide layer is 1~10nm.
The utility model has the beneficial effects that solar battery epitaxial structure provided by the utility model, has by setting The lamination list for thering is at least one to be made of the first different aluminium arsenide layer of n-type doping concentration stacked on top of each other and the second aluminium arsenide layer The sacrificial layer of member, in substrate desquamation to be stripped, under the electrochemical corrosion effect of acidic electrolysis bath, n-type doping concentration is different The first aluminium arsenide layer and the second aluminium arsenide layer the first aluminium arsenide layer and the second arsenic can be made by the Hole oxidation of surface inversion layer Multiple selective oxidations in aluminium layer form aluminum oxide, and aluminum oxide is dissolved in acidic electrolysis bath, to make the first aluminium arsenide layer Porous structure layer is formed with the second aluminium arsenide layer, porous structure layer is in the hydrofluoric acid solution wet etching after electrochemical corrosion, Increase with the contact area of hydrofluoric acid solution, and then improves the efficiency and substrate desquamation efficiency to be stripped of wet etching, in addition, Porous structure layer can also mitigate the removing generated between battery layers and substrate to be stripped and draw in the stripping process of substrate to be stripped Power is pulled, and then improves the separation yield of substrate to be stripped and battery layers.
Detailed description of the invention
Fig. 1 is the structure sectional view of solar battery epitaxial structure in the utility model embodiment；
Fig. 2 is the structure sectional view of solar battery epitaxial structure in the utility model embodiment；
Fig. 3 is the structure sectional view of sacrificial layer in Fig. 2；
Fig. 4 is the flow chart of the substrate desquamation method of solar battery epitaxial structure in the utility model embodiment.
Description of symbols therein:
1. substrate to be stripped；2. sacrificial layer；21. the first aluminium arsenide layer；22. the second aluminium arsenide layer；23. third aluminium arsenide Layer；3. battery layers；4. electrode；5. buffer layer；6. transparent electrode layer；7. Cutting Road.
Specific embodiment
To make those skilled in the art more fully understand the technical solution of the utility model, with reference to the accompanying drawing and specifically Embodiment is described in further detail a kind of solar battery epitaxial structure provided by the utility model.
In order to solve the low technical problem of existing solar cell substrate charge stripping efficiency, the present embodiment provides a kind of sun Energy battery epitaxial structure, as shown in Figure 1, including the sacrificial layer 2 and battery to be stripped substrate 1 and be arranged on substrate 1 to be stripped Layer 3, along the direction far from substrate 1 to be stripped, sacrificial layer 2 and battery layers 3 are set gradually, and sacrificial layer 2 is for assisting lining to be stripped Bottom 1 is separated with battery layers 3, and sacrificial layer 2 includes at least one hierarchical element, along the direction far from substrate 1 to be stripped, each lamination list Member is sequentially stacked, and hierarchical element includes the first aluminium arsenide layer 21 and the second aluminium arsenide layer 22 stacked on top of each other, the first aluminium arsenide layer 21 and second aluminium arsenide layer 22 be n-type doping layer, and the doping concentration of the first aluminium arsenide layer 21 and the second aluminium arsenide layer 22 is not Together.
The sacrificial layer 2 is by being arranged at least one first aluminium arsenide layer 21 different by n-type doping concentration stacked on top of each other The hierarchical element constituted with the second aluminium arsenide layer 22, in substrate 1 to be stripped removing, electrification of the sacrificial layer 2 in acidic electrolysis bath It learns under corrosiveness, the first different aluminium arsenide layer 21 of n-type doping concentration therein and the second aluminium arsenide layer 22 can be anti-by surface The Hole oxidation of type layer makes multiple selective oxidations in the first aluminium arsenide layer 21 and the second aluminium arsenide layer 22 form aluminum oxide, Aluminum oxide is dissolved in acidic electrolysis bath, so that the first aluminium arsenide layer 21 and the second aluminium arsenide layer 22 is made to form porous structure layer, Porous structure layer increases in the hydrofluoric acid solution wet etching after electrochemical corrosion with the contact area of hydrofluoric acid solution, into And 1 charge stripping efficiency of efficiency and substrate to be stripped of wet etching is improved, in addition, porous structure layer can also be in substrate 1 to be stripped Stripping process in, mitigate the removing generated between battery layers 3 and substrate to be stripped 1 and pull power, and then improve lining to be stripped The separation yield at bottom 1 and battery layers 3.
The overall improvement scheme of middle solar battery epitaxial structure based on the above embodiment, the present embodiment provides a kind of sun Energy battery epitaxial structure, as shown in Fig. 2, including the sacrificial layer 2 and battery to be stripped substrate 1 and be arranged on substrate 1 to be stripped Layer 3, along the direction far from substrate 1 to be stripped, sacrificial layer 2 and battery layers 3 are set gradually, and sacrificial layer 2 is for assisting lining to be stripped Bottom 1 is separated with battery layers 3, and sacrificial layer 2 includes at least one hierarchical element, along the direction far from substrate 1 to be stripped, each lamination list Member is sequentially stacked, and hierarchical element includes the first aluminium arsenide layer 21 and the second aluminium arsenide layer 22 stacked on top of each other, the first aluminium arsenide layer 21 and second aluminium arsenide layer 22 be n-type doping layer, and the doping concentration of the first aluminium arsenide layer 21 and the second aluminium arsenide layer 22 is not Together.
Wherein, the dopant material of n-type doping layer is Si, but is not limited to Si.The doping concentration range of first aluminium arsenide layer 21 It is 1 × 1017cm-3~1 × 1019cm-3；The doping concentration range of second aluminium arsenide layer 22 is 1 × 1019cm-3~1 × 1021cm-3。
The sacrificial layer 2 is by being arranged at least one first aluminium arsenide layer 21 different by n-type doping concentration stacked on top of each other The hierarchical element constituted with the second aluminium arsenide layer 22, in substrate 1 to be stripped removing, electrification of the sacrificial layer 2 in acidic electrolysis bath It learns under corrosiveness, the first different aluminium arsenide layer 21 of n-type doping concentration therein and the second aluminium arsenide layer 22 can be anti-by surface The Hole oxidation of type layer makes multiple selective oxidations in the first aluminium arsenide layer 21 and the second aluminium arsenide layer 22 form aluminum oxide, Aluminum oxide is dissolved in acidic electrolysis bath, so that the first aluminium arsenide layer 21 and the second aluminium arsenide layer 22 is made to form porous structure layer, Porous structure layer increases in the hydrofluoric acid solution wet etching after electrochemical corrosion with the contact area of hydrofluoric acid solution, into And 1 charge stripping efficiency of efficiency and substrate to be stripped of wet etching is improved, in addition, porous structure layer can also be in substrate 1 to be stripped Stripping process in, mitigate the removing generated between battery layers 3 and substrate to be stripped 1 and pull power, and then improve lining to be stripped The separation yield at bottom 1 and battery layers 3.
Preferably, the quantity of hierarchical element is 1~5.So set, the first aluminium arsenide layer 21 and the second aluminium arsenide can be made The porous structure layer formed after 22 electrochemical corrosion of layer comes into full contact in subsequent wet etching course with hydrofluoric acid solution, from And improve the efficiency of wet etching and the charge stripping efficiency of substrate to be stripped 1.In the present embodiment, as shown in figure 3, the number of hierarchical element Amount is 2.
Preferably, the thickness range of the first aluminium arsenide layer 21 is 1~10nm；The thickness range of second aluminium arsenide layer 22 is 1 ~10nm.
It is further preferred that sacrificial layer 2 further includes third aluminium arsenide layer 23, third aluminium arsenide layer 23 is located at hierarchical element Close to the side of battery layers 3, third aluminium arsenide layer 23 is n-type doping layer, and the doping concentration of third aluminium arsenide layer 23 is lower than the Any doping concentration in one aluminium arsenide layer 21 and the second aluminium arsenide layer 22.
Wherein, the dopant material of n-type doping layer is Si, but is not limited to Si.The third aluminium arsenide layer of the n-type doping concentration 23, it will not be corroded in electrochemical corrosion course, so as to protect battery layers 3 to damage from electrolytic etching, and third arsenic Change aluminium layer 23 wet etching can remove in a solution of hydrofluoric acid.
Preferably, the doping concentration range of third aluminium arsenide layer 23 is 0~1 × 1017cm-3.The thickness of third aluminium arsenide layer 23 Degree range is 1~10nm.
In addition, the solar battery epitaxial structure in the present embodiment further includes electrode 4, buffer layer 5,6 and of transparent electrode layer The Cutting Road 7 designed as required.Electrode 4 is set to the side away from sacrificial layer 2 of substrate 1 to be stripped；Buffer layer 5 is set to Between substrate 1 and sacrificial layer 2 to be stripped, for blocking the surface defect of substrate 1 to be stripped；Transparency conducting layer 6 is set to battery Layer 3 deviates from the side of sacrificial layer 2；Transparency conducting layer 6 and electrode 4 are the power supply output electrode of solar battery epitaxial structure.It cuts Cut the solar battery epitaxy junction of the 7 various small sizes for large-sized solar battery epitaxial structure to be divided into needs Structure.
Wherein, substrate 1 to be stripped is GaAs substrate, Ge substrate or SiC substrate etc..Buffer layer 5 uses GaAs material, thickness 100~1000nm.Battery layers 3 are the bases by BSF layers, emission layer, Window layer, ohmic contact layer, what tunnel knot etc. collectively constituted Unijunction or multi-junction gallium arsenide battery.
The preparation method of each film layer of solar battery epitaxial structure uses the MOCVD (Metal- of comparative maturity Organic Chemical Vapor Deposition, metallo-organic compound chemical gaseous phase deposition) or MBE (Molecular Beam Epitaxy, molecular beam epitaxy) method, specifically repeat no more.
Based on the above structure of solar battery epitaxial structure, the present embodiment also provides a kind of solar battery epitaxy junction The substrate desquamation method of structure, as shown in Figure 4, comprising:
Step S10: solar battery epitaxial structure is immersed in acidic electrolysis bath and carries out electrochemical corrosion, makes sacrificial layer The first aluminium arsenide layer and the second aluminium arsenide layer in hierarchical element form porous structure layer.
The step specifically includes: solar battery epitaxial structure is immersed in sulfuric acid or hydrochloric acid；It is irradiated by sunlight Solar battery epitaxial structure；Alternatively, forward bias is loaded on the electrode of solar battery epitaxial structure, until hierarchical element In the first aluminium arsenide layer and the second aluminium arsenide layer formed porous structure layer.
The principle that solar battery epitaxial structure realizes electrochemical corrosion is irradiated by sunlight are as follows: sunlight irradiates the sun Energy battery epitaxial structure, solar battery epitaxial structure receive sunlight and are simultaneously translated into electric current, and electric current flows through hierarchical element In the first aluminium arsenide layer and the second aluminium arsenide layer, make shape between the first aluminium arsenide layer and the second aluminium arsenide layer and acidic electrolysis bath At a circuit, which constitutes a corrosion galvanic cell, to realize acidic electrolysis bath to the first aluminium arsenide layer and The corrosion of two aluminium arsenide layers makes the first aluminium arsenide layer and the second aluminium arsenide layer form porous structure.Similarly, by solar-electricity Forward bias is loaded on the electrode of pond epitaxial structure, forms electric current inside solar battery epitaxial structure, electric current flows through lamination The first aluminium arsenide layer and the second aluminium arsenide layer in unit, make the first aluminium arsenide layer and the second aluminium arsenide layer and acidic electrolysis bath it Between form a circuit, which constitutes a corrosion galvanic cell, to realize acidic electrolysis bath to the first aluminium arsenide layer With the corrosion of the second aluminium arsenide layer, the first aluminium arsenide layer and the second aluminium arsenide layer is made to form porous structure.
Wherein, the voltage range of forward bias is 0.5~1V.The diameter range of porous structure layer mesoporous is 1~20nm.
Step S11: the solar battery epitaxial structure after electrochemical corrosion is immersed in hydrofluoric acid solution and carries out chemistry Corrosion removes sacrificial layer, separates the substrate to be stripped of solar battery epitaxial structure with battery layers.
The step specifically includes: by the solar battery epitaxial structure after electrochemical corrosion be immersed in hydrofluoric acid solution into Row chemical attack removes the first aluminium arsenide layer of porous structure and the second aluminium arsenide layer and removes third aluminium arsenide layer.
The utility model has the beneficial effects that solar battery epitaxial structure provided in the utility model, passes through setting The lamination being made of at least one the first different aluminium arsenide layer of n-type doping concentration stacked on top of each other and the second aluminium arsenide layer The sacrificial layer of unit, in substrate desquamation to be stripped, under the electrochemical corrosion effect of acidic electrolysis bath, n-type doping concentration is not Same the first aluminium arsenide layer and the second aluminium arsenide layer can make the first aluminium arsenide layer and the second arsenic by the Hole oxidation of surface inversion layer The multiple selective oxidations changed in aluminium layer form aluminum oxide, and aluminum oxide is dissolved in acidic electrolysis bath, to make the first aluminium arsenide Layer and the second aluminium arsenide layer form porous structure layer, hydrofluoric acid solution wet etching of the porous structure layer after electrochemical corrosion In, increase with the contact area of hydrofluoric acid solution, and then improve the efficiency and substrate desquamation efficiency to be stripped of wet etching, separately Outside, porous structure layer can also mitigate the stripping generated between battery layers and substrate to be stripped in the stripping process of substrate to be stripped From pullling power, and then improve the separation yield of substrate to be stripped and battery layers.
It is understood that embodiment of above is merely to illustrate that the principles of the present invention and uses exemplary Embodiment, however the utility model is not limited thereto.For those skilled in the art, this is not being departed from In the case where the spirit and essence of utility model, various changes and modifications can be made therein, these variations and modifications are also considered as this reality With novel protection scope.

Claims (7)

1. a kind of solar battery epitaxial structure, including substrate to be stripped and the sacrificial layer being arranged on the substrate to be stripped and Battery layers, along the direction far from the substrate to be stripped, the sacrificial layer and the battery layers are set gradually, and the sacrificial layer is used It is separated in the auxiliary substrate to be stripped with the battery layers, which is characterized in that the sacrificial layer includes at least one lamination list Member, along the direction far from the substrate to be stripped, each hierarchical element is sequentially stacked, and the hierarchical element includes stacked on top of each other The first aluminium arsenide layer and the second aluminium arsenide layer, first aluminium arsenide layer and second aluminium arsenide layer are n-type doping layer, And first aluminium arsenide layer is different with the doping concentration of second aluminium arsenide layer.
2. solar battery epitaxial structure according to claim 1, which is characterized in that the doping of first aluminium arsenide layer Concentration range is 1 × 1017cm-3~1 × 1019cm-3；The doping concentration range of second aluminium arsenide layer is 1 × 1019cm-3~1 ×1021cm-3。
3. solar battery epitaxial structure according to claim 1, which is characterized in that the quantity of the hierarchical element is 1 ~5.
4. solar battery epitaxial structure according to claim 1, which is characterized in that the thickness of first aluminium arsenide layer Range is 1~10nm；The thickness range of second aluminium arsenide layer is 1~10nm.
5. solar battery epitaxial structure according to claim 1, which is characterized in that the sacrificial layer further includes third arsenic Change aluminium layer, the third aluminium arsenide layer is located at the side close to the battery layers of the hierarchical element, the third aluminium arsenide Layer is n-type doping layer, and the doping concentration of the third aluminium arsenide layer is lower than first aluminium arsenide layer and second arsenic Any doping concentration in aluminium layer.
6. solar battery epitaxial structure according to claim 5, which is characterized in that the doping of the third aluminium arsenide layer Concentration range is 0~1 × 1017cm-3。
7. solar battery epitaxial structure according to claim 5, which is characterized in that the thickness of the third aluminium arsenide layer Range is 1~10nm.
CN201821934160.3U 2018-11-22 2018-11-22 A kind of solar battery epitaxial structure Active CN208873729U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201821934160.3U CN208873729U (en) 2018-11-22 2018-11-22 A kind of solar battery epitaxial structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201821934160.3U CN208873729U (en) 2018-11-22 2018-11-22 A kind of solar battery epitaxial structure

Publications (1)

Publication Number Publication Date
CN208873729U true CN208873729U (en) 2019-05-17

Family

ID=66471573

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201821934160.3U Active CN208873729U (en) 2018-11-22 2018-11-22 A kind of solar battery epitaxial structure

Country Status (1)

Country Link
CN (1) CN208873729U (en)

Similar Documents

Publication Publication Date Title
US20190013426A1 (en) Axially-integrated epitaxially-grown tandem wire arrays
US20180219115A1 (en) Semiconductor structures for fuel generation
US8053666B2 (en) Solar cell and manufacturing method of the solar cell
US8906733B2 (en) Methods for forming nanostructures and photovoltaic cells implementing same
US20160190377A1 (en) A high efficiency stacked solar cell
EP2761668A2 (en) Thin film inp-based solar cells using epitaxial lift-off
KR20130084218A (en) Nanostructure and photovoltaic cell implementing same
CN103296123B (en) P-type carbon quantum dot/N-type silicon nanowire array heterojunction solar battery and preparation method thereof
JP2014192257A (en) Solar battery
CN109273545A (en) A kind of production method of cadmium telluride diaphragm solar battery component
US20130174896A1 (en) Tandem solar cell using a silicon microwire array and amorphous silicon photovoltaic layer
EP2451993A2 (en) Tandem photoelectrochemical cell for water dissociation
CN102800726B (en) Flip solar battery chip and preparation method thereof
CN102790120A (en) GaInP/GaAs/Ge three-junction solar battery and manufacturing method thereof
CN101700872B (en) Copper-indium-gallium-selenium nanowire array and preparation method and application thereof
CN101700871A (en) Copper-indium-selenium nanowire array and preparation method and application thereof
CN102790116A (en) Inverted GaInP/GaAs/Ge/Ge four-junction solar cell and preparation method thereof
CN208873729U (en) A kind of solar battery epitaxial structure
CN102790117A (en) GaInP/GaAs/InGaNAs/Ge four-junction solar cell and preparation method thereof
CN209357742U (en) Three-knot laminated solar battery
CN105280745B (en) Tetra- knot cascade solar cells of GaInP/GaAs/InGaAs/Ge and preparation method thereof
CN103199142A (en) GaInP/GaAs/InGaAs/Ge quadruple-junction solar battery and preparation method thereof
CN204315613U (en) A kind of lamination solar cell
CN111211188A (en) Solar cell epitaxial structure and substrate stripping method thereof
CN208904030U (en) Gallium arsenide cells epitaxial structure

Legal Events

Date Code Title Description
GR01 Patent grant
GR01 Patent grant
TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20210122

Address after: Unit 611, unit 3, 6 / F, building 1, yard 30, Yuzhi East Road, Changping District, Beijing 102208

Patentee after: Zishi Energy Co.,Ltd.

Address before: Room A129-1, No. 10 Zhongxing Road, Changping District Science and Technology Park, Beijing 102200

Patentee before: DONGTAI HI-TECH EQUIPMENT TECHNOLOGY Co.,Ltd.