CN208849742U - Oscillator - Google Patents
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- CN208849742U CN208849742U CN201821548346.5U CN201821548346U CN208849742U CN 208849742 U CN208849742 U CN 208849742U CN 201821548346 U CN201821548346 U CN 201821548346U CN 208849742 U CN208849742 U CN 208849742U
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Abstract
The utility model discloses a kind of oscillators, it include: primary current branch, two image current branches, two load capacitances, comparison circuit and latch, primary current branch generates primary current after the power-up and generates reference voltage, the capacitance voltage of two load capacitances is compared with the reference voltage respectively and exports comparison signal by comparison circuit, the output level of latch is overturn when the comparison signal is overturn, two image current branches and described two load capacitances correspond, described two image current branches alternate conduction in the output level overturning of the latch, and image current is obtained to charge to corresponding load capacitance from the primary current mirror-image copies in conducting.The utility model has the characteristics that low cost, high volume production yield, high reliability, wide-voltage range, excellent temperature characterisitic, and repair item can only to load capacitance carry out, it can also be carried out simultaneously for load capacitance and 3rd resistor, can be enhanced and repair a success rate.
Description
Technical field
The utility model relates to circuit field more particularly to a kind of oscillators.
Background technique
Classical universal 555 timer is a kind of self-excitation type pulse oscillator, from invention in 1971 and volume production use with
To generate a variety of dedicated integrated circuit of clock products in use.These products usually have determining duty ratio (such as
50%), certain precision and voltage and temperature use scope.By the selection of external resistance and capacitor or reference voltage with
Combination, can produce oscillator, clock, Schmidt trigger, the various application circuits of delayer, etc., existing oscillator cores
Piece circuit is complicated, and plug-in resistance or capacitor are needed in use, and overall cost is high.
Utility model content
The technical problem to be solved by the present invention is in view of the above drawbacks of the prior art, provide a kind of oscillator.
The technical scheme adopted by the utility model to solve the technical problem is as follows: constructing a kind of oscillator, comprising:
Primary current branch, for generating primary current after the power-up and generating reference voltage；
Two load capacitances；
Comparison circuit, for the capacitance voltage of two load capacitances to be compared and exported with the reference voltage respectively
Comparison signal；
Latch, output level are overturn when the comparison signal is overturn；
Two image current branches are corresponded with described two load capacitances, and described two image current branches are in institute
Alternate conduction when stating the output level overturning of latch；And mirror image electricity is obtained from the primary current mirror-image copies in conducting
Stream to corresponding load capacitance to charge.
Optionally, the load capacitance is the MOM capacitor or MIM capacitor of metal plate structure；Or the load electricity
Hold the capacitor constituted for MOSFET, the source electrode of MOSFET, drain electrode, substrate pole are connected together as the one of the load capacitance
Pole, an other pole of the gate pole of MOSFET as the load capacitance.
Optionally, the primary current branch includes first resistor RBWith the first switch tube of diode-connected state, institute
State two image current branch structures it is identical and include second switch and third switching tube.
Optionally, the first switch tube is the first metal-oxide-semiconductor, and the second switch is and the first metal-oxide-semiconductor type
Identical second metal-oxide-semiconductor, the third switching tube are third metal-oxide-semiconductor.
Optionally, the comparison circuit include with one-to-one two comparators of two load capacitances, each described
The corresponding load capacitance, and connection the 2nd MOS of the load capacitance are connected between the drain electrode and source electrode of two metal-oxide-semiconductors
One pole of the drain electrode of pipe is connected to the first input end of corresponding comparator, and the second input terminal of two comparators is connected to institute
Primary current branch is stated to obtain the reference voltage, the output end of two comparators is separately connected two inputs of latch
End.
Optionally, the oscillator further includes two phase inverters, and the output end of the latch is connected to first paraphase
The input terminal of device, the output end of first phase inverter connect the input terminal of second phase inverter, the output end of second phase inverter
Connect the output end OUT of the oscillator, the output end of the output end of the latch and first phase inverter is respectively connected to
The gate pole of two third metal-oxide-semiconductors.
Optionally, each image current branch further includes second resistance, the first resistor and second resistance type
Different and temperature drift is in the same direction, and the primary current branch further includes 3rd resistor, and the first resistor is identical with 3rd resistor type,
First metal-oxide-semiconductor, two the second metal-oxide-semiconductors source electrode be connected to the first power end of the oscillator altogether, the gate pole difference of the first metal-oxide-semiconductor
The gate pole of two the second metal-oxide-semiconductors is connected, the drain electrode of the first metal-oxide-semiconductor connects the first end of first resistor via the 3rd resistor,
The drain electrode of each second metal-oxide-semiconductor is connected to the drain electrode of corresponding third metal-oxide-semiconductor, first resistor via corresponding second resistance
Second end and the source electrodes of two third metal-oxide-semiconductors be connected to the second source end of the oscillator altogether, 3rd resistor is adjustable resistance,
The adjustable end of adjustable resistance is connected to the comparison circuit to provide the reference voltage, wherein:
First metal-oxide-semiconductor, two the second metal-oxide-semiconductors are PMOS tube, and two third metal-oxide-semiconductors are NMOS tube, and described first
Power end is power end VDD, and the second source end is ground terminal VSS；Alternatively, first metal-oxide-semiconductor, two the second metal-oxide-semiconductors
It is NMOS tube, two third metal-oxide-semiconductors are PMOS tube, and first power end is ground terminal VSS, and the second source end is electricity
Source VDD.
Optionally, each image current branch further includes second resistance, the first resistor and second resistance type
Different and temperature drift is in the same direction, the first metal-oxide-semiconductor, two the second metal-oxide-semiconductors source electrode be connected to the first power end of the oscillator altogether, first
The gate pole of metal-oxide-semiconductor is separately connected the gate pole of two the second metal-oxide-semiconductors, and the drain electrode of the first metal-oxide-semiconductor connects the first end of first resistor, often
The drain electrode of a second metal-oxide-semiconductor is connected to the drain electrode of corresponding third metal-oxide-semiconductor via corresponding second resistance, first resistor
The source electrode of second end and two third metal-oxide-semiconductors is connected to the second source end of the oscillator altogether, and the drain electrode of the first metal-oxide-semiconductor is also connected with
To the comparison circuit to provide the reference voltage, wherein:
First metal-oxide-semiconductor, two the second metal-oxide-semiconductors are PMOS tube, and two third metal-oxide-semiconductors are NMOS tube, and described first
Power end is power end VDD, and the second source end is ground terminal VSS；Alternatively, first metal-oxide-semiconductor, two the second metal-oxide-semiconductors
It is NMOS tube, two third metal-oxide-semiconductors are PMOS tube, and first power end is ground terminal VSS, and the second source end is electricity
Source VDD.
Optionally, the primary current branch further includes second resistance, and the first resistor is different with second resistance type
And temperature drift is reversed, the first metal-oxide-semiconductor, two the second metal-oxide-semiconductors source electrode be connected to the first power end of the oscillator, the first MOS altogether
The gate pole of pipe is separately connected the gate pole of two the second metal-oxide-semiconductors, and the drain electrode of the first metal-oxide-semiconductor is via second resistance connection first resistor
The drain electrode of first end, each second metal-oxide-semiconductor is connected to the drain electrode of corresponding third metal-oxide-semiconductor, first resistor RBSecond end
It is connected to the second source end of the oscillator altogether with the source electrode of two third metal-oxide-semiconductors, the drain electrode of the first metal-oxide-semiconductor is additionally coupled to described
Comparison circuit to provide the reference voltage, wherein:
First metal-oxide-semiconductor, two the second metal-oxide-semiconductors are PMOS tube, and two third metal-oxide-semiconductors are NMOS tube, and described first
Power end is power end VDD, and the second source end is ground terminal VSS；Alternatively, first metal-oxide-semiconductor, two the second metal-oxide-semiconductors
It is NMOS tube, two third metal-oxide-semiconductors are PMOS tube, and first power end is ground terminal VSS, and the second source end is electricity
Source VDD.
Optionally, the oscillator further includes electrification reset circuit, and the electrification reset circuit connects the oscillator
Between power end VDD and the reset terminal of the latch, for resetting the output electricity of the latch when power end VDD is powered on
It is flat.
The oscillator of the utility model, have the advantages that directly extracted using simple primary current branch or
Reference voltage is derived, while generating two equivalent secondary current sources by mirror-image copies and alternately charging to load capacitance, then
In conjunction with comparison circuit, latch, to realize oscillation, the oscillator structure optimization of the utility model, area is small, and when use
Any plug-in component is not needed, has the characteristics that significant overall cost advantage, high volume production yield, high reliability；And repair item
Only load capacitance can be carried out, can greatly simplify circuit, save resource, and guarantee the stabilization of frequency of oscillation；Into one
Step ground, the primary current branch of the utility model therefore have using the metal-oxide-semiconductor of resistance and diode-connected state
Wide-voltage range guarantees low pressure starting of oscillation；Load capacitance and 3rd resistor can also be directed to while carry out, institute by further repairing item
A success rate is repaired can be enhanced, to improve survey (test of CP probe) yield in product.A logic high is repaired for load electricity
Appearance is significantly corrected, and low level is corrected by a small margin for 3rd resistor；The temperature drift characteristic relationship of first resistor and second resistance
It can guarantee that frequency of oscillation varies with temperature minimum, so that the temperature characterisitic that oscillator is excellent.
Detailed description of the invention
In order to illustrate the embodiment of the utility model or the technical proposal in the existing technology more clearly, below will be to embodiment
Or attached drawing needed to be used in the description of the prior art is briefly described, it should be apparent that, the accompanying drawings in the following description is only
It is the embodiments of the present invention, for those of ordinary skill in the art, without creative efforts, also
Other attached drawings can be obtained according to the attached drawing of offer:
Fig. 1 is the circuit diagram of the utility model embodiment one；
Fig. 2 is the circuit diagram of the utility model embodiment two；
Fig. 3 is the circuit diagram of the utility model embodiment three；
Fig. 4 is the circuit diagram of the utility model embodiment four；
Fig. 5 is the circuit diagram of the utility model embodiment five；
Fig. 6 is the circuit diagram of the utility model embodiment six.
Specific embodiment
The utility model is more fully retouched below with reference to relevant drawings for the ease of understanding the utility model,
It states.The exemplary embodiments of the utility model are given in attached drawing.But the utility model can come in many different forms in fact
It is existing, however it is not limited to embodiment described herein.On the contrary, purpose of providing these embodiments is makes public affairs to the utility model
It is more thorough and comprehensive to open content.
It should be noted that word " connected " or " connection ", not only include being connected directly two entities, it also include logical
It crosses and is indirectly connected with other entities beneficial to improvement.Unless otherwise defined, all technology and section used herein
Technics has the same meaning as commonly understood by one of ordinary skill in the art to which the utility model belongs.It is practical new at this herein
The term used in the description of type is only for the purpose of describing specific embodiments that be not intended to limit this practical new
Type.
" first ", " second " used in this specification etc. includes that the term of ordinal number can be used for illustrating various constituent elements,
But these constituent elements are not limited by these terms.It is only that using the purpose of these terms and distinguishes a constituent element
In other constituent elements.For example, first constituent element can be named as under the premise of not departing from interest field of the invention
Two constituent elements, similarly, the second constituent element can also be named as the first constituent element.
The total thinking of the utility model is: constructing a kind of oscillator, comprising: primary current branch, two image current branch
Road, two load capacitances, comparison circuit and latch, primary current branch generate primary current after the power-up and generate with reference to electricity
The capacitance voltage of two load capacitances is compared with the reference voltage and is exported comparison signal respectively by pressure, comparison circuit,
The output level of latch is overturn when the comparison signal is overturn, two image current branches and described two load capacitances one
One is corresponding, described two image current branches alternate conduction in the output level overturning of the latch, and in conducting
Image current is obtained from the primary current mirror-image copies to charge to corresponding load capacitance.
In order to better understand the above technical scheme, in conjunction with appended figures and specific embodiments to upper
It states technical solution to be described in detail, it should be understood that the specific features in the utility model embodiment and embodiment are to this
The detailed description of application technical solution, rather than the restriction to technical scheme, in the absence of conflict, this is practical
Technical characteristic in new embodiment and embodiment can be combined with each other.
Embodiment one
With reference to Fig. 1, the oscillator of embodiment one can be made chip product, and there are three ports for chip tool, be respectively as follows: power supply
Hold VDD, ground terminal VSS and output end OUT.Power end VDD, ground terminal VSS are respectively connected to positive and negative chip operation power supply, output end
OUT outputting oscillation signal, specifically, oscillator includes: primary current branch 101, two image current branches 102,103, two
A load capacitance CS1、CS2, comparison circuit 104, electrification reset circuit 105, latch 106.
Wherein, primary current branch 101 generates primary current after power end VDD is powered on and generates reference voltage VREF；On
Reset circuit 105 connects between power end VDD and the reset terminal of the latch, for the reset when power end VDD is powered on
The output level of the latch 106, i.e., so that the output level of latch 106 it is of short duration be locked in fixed level logic；
Comparison circuit 104 is respectively by two load capacitance CS1、CS2Capacitance voltage VS1、VS2With the reference voltage VREFIt is compared simultaneously
Export comparison signal；The output level of latch 106 is overturn when the comparison signal is overturn；Two image current branches 102,
103, with described two load capacitance CS1、CS2It corresponds, described two image current branches 102,103 are in the latch
Alternate conduction when 106 output level overturning；And conducting when from the primary current mirror-image copies obtain image current with
To corresponding load capacitance CS1Or CS2Charging.
More specifically, in the present embodiment, the primary current branch 101 includes first resistor RB, diode-connected state
The first metal-oxide-semiconductor M1(i.e. the first metal-oxide-semiconductor M1Gate pole and drain electrode connection), 3rd resistor RS.Described two image current branches
102,103 structures are identical, and include second resistance RC1/RC2, the second metal-oxide-semiconductor M2/M3, third metal-oxide-semiconductor M4/M5.The comparison is electric
Road 104 includes and two load capacitance CS1、CS2One-to-one two comparators.The rear class of the latch 106 is also connected with
Two phase inverters.Wherein, the first metal-oxide-semiconductor M1And two the second metal-oxide-semiconductor M2And M3It is PMOS tube, two third metal-oxide-semiconductors
M4And M5For NMOS tube.
Wherein, the first metal-oxide-semiconductor M1, two the second metal-oxide-semiconductor M2And M3Source electrode be connected to power end VDD, the first metal-oxide-semiconductor M altogether1
Gate pole be separately connected two the second metal-oxide-semiconductor M2And M3Gate pole, the first metal-oxide-semiconductor M1Drain electrode via the 3rd resistor RSEven
Meet first resistor RBFirst end, the second metal-oxide-semiconductor M2、M3Drain electrode respectively via corresponding second resistance RC、RC2It is connected to corresponding
Third metal-oxide-semiconductor M4、M5Drain electrode, first resistor RBSecond end and two third metal-oxide-semiconductor M2And M3Source electrode be connected to ground connection altogether
Hold VSS, the second metal-oxide-semiconductor M2、M3Corresponding load capacitance C is connected between respective drain electrode and source electrodeS1、CS2, and load capacitance CS1、
CS2Connection the second metal-oxide-semiconductor M2、M3A pole of drain electrode be connected to the first input end of corresponding comparator, 3rd resistor
RSFor adjustable resistance, the adjustable end of adjustable resistance is connected to second input terminal of two comparators to provide the reference voltage
VREF, the output end of two comparators is separately connected two input terminals of latch, and the output end of the latch is connected to first
The input terminal of a phase inverter, the output end of first phase inverter connect the input terminal of second phase inverter, second phase inverter
Output end connects the output end OUT of the oscillator, the output end difference of the output end of the latch and first phase inverter
It is connected to two third metal-oxide-semiconductor M4、M5Gate pole.
In power up, on the one hand, electrification reset circuit 105 consolidates of short duration being locked in of the output level of latch 106
Fixed logic level generates reverse logic level after through first gun stocks, they make image current branch 102,
NMOS tube M in 103 as switch4、M5On off operating mode determine.On the other hand, rear primary current branch 101 is powered on to open naturally
It is dynamic, and any time M4、M5Only one is conducting, so leading to image current branch by PMOS M2 and M3 mirror-image copies
102, one of branch conducting in 103, the current branch 102 or 103 after conducting is then to corresponding capacitor CS1Or CS2It fills
Electricity, as node potential VS1Or VS2More than the reference voltage V generated by current branch 101REFAfterwards, the output electricity of corresponding comparator
Flat overturning causes the overturning of latch output level, turns off CS1Or CS2Charging process, while starting an other current branch
103 or 102 start to charge.This process alternately, then forms steady oscillation of controlling oneself.Second gun stocks plays shaping and delays
Function is rushed, resistance RB and RC are fixed value resistance.
In the present embodiment, capacitor CS1、CS2With resistance RSTo repair an element, value is determined by repairing item.It should be noted that repairing
Item both can be only to load capacitance CS1、CS2It carries out, can greatly simplify circuit, save resource, and guarantee frequency of oscillation
Stablize.Capacitor C can also be directed toS1、CS2With resistance RSIt carries out simultaneously, for example repairs a logic high and make significantly for load capacitance
Amendment, low level are directed to RSIt corrects by a small margin.
It is understood that the type of the metal-oxide-semiconductor of the present embodiment may be replaced by PMOS tube, it is only necessary to by metal-oxide-semiconductor
Position is adjusted；In addition, metal-oxide-semiconductor also can use other types of switch pipe fitting substitution, such as triode etc..Though in addition,
In right the present embodiment, M4、M5Selection is PMOS, in fact, can also be with M1、M2And M3It is equally selected as NMOS, these are all
The simple deformation of the present embodiment.
In addition, the load capacitance C in the present embodimentS1、CS2For the MOM capacitor or MIM capacitor of metal plate structure,
In other deformation schemes, the capacitor of MOSFET composition also could alternatively be, for example, the source electrode of MOSFET, drain electrode, substrate pole are connected
The pole being connected together as the load capacitance, an other pole of the gate pole of MOSFET as the load capacitance.
It can be seen that the oscillator of the utility model does not need any plug-in component, there is low cost, high volume production yield, Gao Ke
The characteristics of by property, primary current branch 101 using resistance and diode-connected state metal-oxide-semiconductor, therefore have Width funtion
Range guarantees low pressure starting of oscillation, in the present embodiment, the first resistor RBWith 3rd resistor RSType is identical, the first resistor RB
With second resistance RC、RC2Type is different and temperature drift is in the same direction, it is ensured that frequency of oscillation varies with temperature minimum, so that oscillator is excellent
Good temperature characterisitic.
Embodiment two
With reference to Fig. 2, it is in place of the present embodiment two and one main difference of embodiment, by resistance RSIt deletes, repairs item only to negative
Carry capacitor CS1、CS2It carries out.Due to by resistance RSIt deletes, so the first metal-oxide-semiconductor M1Drain electrode be to be directly connected to first resistor RB's
First end, and the first metal-oxide-semiconductor M1Drain electrode be further connected to two comparators to provide the reference voltage VREF.Its work
It is similar with embodiment one to make principle, details are not described herein again.
The present embodiment two and embodiment one another the difference is that, by capacitor CS1、CS2Replacement in order to
PMOSFET capacitor, certainly, the capacitor C in embodiment twoS1、CS2It can also be using the capacitor as one form of embodiment.
Embodiment three
With reference to Fig. 3, the present embodiment three and embodiment two the difference is that, by embodiment two current branch 102,
Second resistance R in 103C、RC2It eliminates, and increases second resistance R in primary current branch 101C, second resistance RC
With first resistor RBMerge, so the first metal-oxide-semiconductor M1Drain electrode via second resistance RCConnect first resistor RBFirst end,
Two metal-oxide-semiconductor M2、M3Drain electrode be connected directly to corresponding third metal-oxide-semiconductor M4、M5Drain electrode.It is further to note that resistance RB
With resistance RCType is different and temperature drift is reversed.
Example IV
With reference to Fig. 4, the present embodiment four and embodiment one the difference is that, by the first metal-oxide-semiconductor M1And second metal-oxide-semiconductor
M2、M3NMOS tube is changed into, by third metal-oxide-semiconductor M4、M5PMOS tube is changed into.Current branch 101,102,103 is had adjusted accordingly
In the node that connects altogether of each metal-oxide-semiconductor, specifically, compared with embodiment one, by the first metal-oxide-semiconductor M in the present embodiment four1, two
Second metal-oxide-semiconductor M2And M3Source electrode be changed to be connected to ground terminal VSS altogether, by first resistor RBSecond end and two third metal-oxide-semiconductor M2
And M3Source electrode be changed to be connected to power end VDD altogether.
Embodiment five
With reference to Fig. 5, the present embodiment five and embodiment two the difference is that, by the first metal-oxide-semiconductor M1And second metal-oxide-semiconductor
M2、M3NMOS tube is changed into, by third metal-oxide-semiconductor M4、M5PMOS tube is changed into.Current branch 101,102,103 is had adjusted accordingly
In the node that connects altogether of each metal-oxide-semiconductor, specifically, compared with embodiment two, by the first metal-oxide-semiconductor M in the present embodiment five1, two
Second metal-oxide-semiconductor M2And M3Source electrode be changed to be connected to ground terminal VSS altogether, by first resistor RBSecond end and two third metal-oxide-semiconductor M2
And M3Source electrode be changed to be connected to power end VDD altogether.
Embodiment six
With reference to Fig. 6, the present embodiment six and embodiment three the difference is that, by the first metal-oxide-semiconductor M1And second metal-oxide-semiconductor
M2、M3NMOS tube is changed into, by third metal-oxide-semiconductor M4、M5PMOS tube is changed into.Current branch 101,102,103 is had adjusted accordingly
In the node that connects altogether of each metal-oxide-semiconductor, specifically, compared with embodiment three, by the first metal-oxide-semiconductor M in the present embodiment six1, two
Second metal-oxide-semiconductor M2And M3Source electrode be changed to be connected to ground terminal VSS altogether, by first resistor RBSecond end and two third metal-oxide-semiconductor M2
And M3Source electrode be changed to be connected to power end VDD altogether.
In conclusion the oscillator of the utility model, has the advantages that direct using simple primary current branch
Reference voltage is extracted or derived, while generating two equivalent secondary current sources alternately to load capacitance by mirror-image copies
Charging, in conjunction with comparison circuit, latch, to realize oscillation, the oscillator structure optimization of the utility model, area is small, and
And using when do not need any plug-in component, have the characteristics that significant overall cost advantage, high volume production yield, high reliability；
And repair item only load capacitance can be carried out, can greatly simplify circuit, save resource, and guarantee frequency of oscillation is steady
It is fixed；Further, the primary current branch of the utility model using resistance and diode-connected state metal-oxide-semiconductor,
Therefore there is wide-voltage range, guarantee low pressure starting of oscillation；Further repairing item can also be same for load capacitance and 3rd resistor
Shi Jinhang, it is possible to which a success rate is repaired in enhancing, to improve survey (test of CP probe) yield in product.Repair a logic high needle
Load capacitance is significantly corrected, low level is corrected by a small margin for 3rd resistor；The temperature drift of first resistor and second resistance
Characteristic relation can guarantee that frequency of oscillation varies with temperature minimum, so that the temperature characterisitic that oscillator is excellent.
The embodiments of the present invention are described above in conjunction with attached drawing, but the utility model is not limited to
The specific embodiment stated, the above mentioned embodiment is only schematical, rather than restrictive, this field it is common
Technical staff is not departing from the utility model aims and scope of the claimed protection situation under the enlightenment of the utility model
Under, many forms can be also made, these are belonged within the protection of the utility model.
Claims (10)
1. a kind of oscillator characterized by comprising
Primary current branch, for generating primary current after the power-up and generating reference voltage；
Two load capacitances；
Comparison circuit, compared with the capacitance voltage of two load capacitances is compared and is exported with the reference voltage respectively
Signal；
Latch, output level are overturn when the comparison signal is overturn；
Two image current branches are corresponded with described two load capacitances, and described two image current branches are in the lock
Alternate conduction when the output level overturning of storage；And conducting when from the primary current mirror-image copies obtain image current with
It charges to corresponding load capacitance.
2. oscillator according to claim 1, which is characterized in that the load capacitance is the MOM electricity of metal plate structure
Appearance or MIM capacitor；Or the load capacitance is the capacitor that MOSFET is constituted, the source electrode of MOSFET, drain electrode, the connection of substrate pole
Together as a pole of the load capacitance, an other pole of the gate pole of MOSFET as the load capacitance.
3. oscillator according to claim 1, which is characterized in that the primary current branch includes first resistor RBWith two
The first switch tube of pole pipe connection status, described two image current branch structures are identical and include second switch and third
Switching tube.
4. oscillator according to claim 3, which is characterized in that the first switch tube be the first metal-oxide-semiconductor, described second
Switching tube is the second metal-oxide-semiconductor identical with the first metal-oxide-semiconductor type, and the third switching tube is third metal-oxide-semiconductor.
5. oscillator according to claim 4, which is characterized in that the comparison circuit include with two load capacitances one by one
Corresponding two comparators connect the corresponding load capacitance, and institute between the drain electrode and source electrode of each second metal-oxide-semiconductor
The pole for stating the drain electrode of connection second metal-oxide-semiconductor of load capacitance is connected to the first input end of corresponding comparator, and two
Second input terminal of comparator is connected to the primary current branch to obtain the reference voltage, the output of two comparators
End is separately connected two input terminals of latch.
6. oscillator according to claim 4, which is characterized in that the oscillator further includes two phase inverters, the lock
The output end of storage is connected to the input terminal of first phase inverter, and the output end of first phase inverter connects second phase inverter
Input terminal, the output end of second phase inverter connect the output end OUT of the oscillator, the output end of the latch and first
The output end of a phase inverter is respectively connected to the gate pole of two third metal-oxide-semiconductors.
7. oscillator according to claim 4, which is characterized in that each image current branch further includes the second electricity
Resistance, the first resistor is different with second resistance type and temperature drift is in the same direction, and the primary current branch further includes 3rd resistor, institute
State that first resistor is identical with 3rd resistor type, the first metal-oxide-semiconductor, two the second metal-oxide-semiconductors source electrode be connected to the oscillator altogether
First power end, the gate pole of the first metal-oxide-semiconductor are separately connected the gate pole of two the second metal-oxide-semiconductors, and the drain electrode of the first metal-oxide-semiconductor is via described
3rd resistor connects the first end of first resistor, and the drain electrode of each second metal-oxide-semiconductor is connected to via corresponding second resistance
The source electrode of the drain electrode of corresponding third metal-oxide-semiconductor, the second end of first resistor and two third metal-oxide-semiconductors is connected to the oscillator altogether
Second source end, 3rd resistor are adjustable resistance, and the adjustable end of adjustable resistance is connected to the comparison circuit to provide the ginseng
Voltage is examined, wherein:
First metal-oxide-semiconductor, two the second metal-oxide-semiconductors are PMOS tube, and two third metal-oxide-semiconductors are NMOS tube, first power supply
End is power end VDD, and the second source end is ground terminal VSS；Alternatively, first metal-oxide-semiconductor, two the second metal-oxide-semiconductors are
NMOS tube, two third metal-oxide-semiconductors are PMOS tube, and first power end is ground terminal VSS, and the second source end is power end
VDD。
8. oscillator according to claim 4, which is characterized in that each image current branch further includes the second electricity
Resistance, the first resistor and second resistance type are different and temperature drift is in the same direction, the first metal-oxide-semiconductor, two the second metal-oxide-semiconductors source electrode connect altogether
In the first power end of the oscillator, the gate pole of the first metal-oxide-semiconductor is separately connected the gate pole of two the second metal-oxide-semiconductors, the first metal-oxide-semiconductor
Drain electrode connection first resistor first end, the drain electrode of each second metal-oxide-semiconductor is connected to phase via corresponding second resistance
The drain electrode for the third metal-oxide-semiconductor answered, the source electrode of the second end of first resistor and two third metal-oxide-semiconductors are connected to the of the oscillator altogether
Two power ends, the drain electrode of the first metal-oxide-semiconductor are additionally coupled to the comparison circuit to provide the reference voltage, in which:
First metal-oxide-semiconductor, two the second metal-oxide-semiconductors are PMOS tube, and two third metal-oxide-semiconductors are NMOS tube, first power supply
End is power end VDD, and the second source end is ground terminal VSS；Alternatively, first metal-oxide-semiconductor, two the second metal-oxide-semiconductors are
NMOS tube, two third metal-oxide-semiconductors are PMOS tube, and first power end is ground terminal VSS, and the second source end is power end
VDD。
9. oscillator according to claim 4, which is characterized in that the primary current branch further includes second resistance, institute
State that first resistor is different with second resistance type and temperature drift is reversed；
First metal-oxide-semiconductor, two the second metal-oxide-semiconductors source electrode be connected to the first power end of the oscillator, the gate pole of the first metal-oxide-semiconductor altogether
It is separately connected the gate pole of two the second metal-oxide-semiconductors, the drain electrode of the first metal-oxide-semiconductor connects the first end of first resistor via second resistance,
The drain electrode of each second metal-oxide-semiconductor is connected to the drain electrode of corresponding third metal-oxide-semiconductor, first resistor RBSecond end with two the
The source electrode of three metal-oxide-semiconductors is connected to the second source end of the oscillator altogether, and the drain electrode of the first metal-oxide-semiconductor is additionally coupled to the comparison circuit
To provide the reference voltage, wherein:
First metal-oxide-semiconductor, two the second metal-oxide-semiconductors are PMOS tube, and two third metal-oxide-semiconductors are NMOS tube, first power supply
End is power end VDD, and the second source end is ground terminal VSS；Alternatively, first metal-oxide-semiconductor, two the second metal-oxide-semiconductors are
NMOS tube, two third metal-oxide-semiconductors are PMOS tube, and first power end is ground terminal VSS, and the second source end is power end
VDD。
10. oscillator according to claim 1, which is characterized in that the oscillator further includes electrification reset circuit, described
Electrification reset circuit connects between the power end VDD of the oscillator and the reset terminal of the latch, in power end VDD
The output level of the latch is resetted when powering on.
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| WO2024000644A1 (en) * | 2022-06-30 | 2024-01-04 | 长鑫存储技术有限公司 | Test circuit, test system, test method and semiconductor device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2024000644A1 (en) * | 2022-06-30 | 2024-01-04 | 长鑫存储技术有限公司 | Test circuit, test system, test method and semiconductor device |
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